High heat dissipation power semiconductor modules and module connection components

Abstract

This utility model belongs to the field of power semiconductor module technology, specifically relating to a high heat dissipation power semiconductor module and module connection components. The high heat dissipation power semiconductor module of this utility model includes: an encapsulation material; a first heat sink and a second heat sink located within the encapsulation material; power terminals respectively disposed at both ends of each heat sink; a plurality of power chips disposed between the first and second heat sinks; the back and front sides of the power chips are respectively connected to the first and second heat sinks; and signal terminals connected to the power chips; wherein the heat sinks have internal heat dissipation channels for the flow of cooling medium; and the power terminals have internal heat dissipation channels communicating with the heat dissipation channels. This utility model's high heat dissipation power semiconductor module reconstructs the traditional "power chip-insulating layer-heat sink" structure into a novel heat dissipation topology of "power chip-conductive heat dissipation channel-external insulation," while the exposed terminals undertake the dual functions of commutation and energy conversion, resulting in a novel high heat dissipation power semiconductor module with a shortened heat dissipation path, reduced interface thermal resistance, and adapted interface thermal expansion coefficient.

Description

Technical Field

[0001] This utility model belongs to the field of power semiconductor module technology, specifically relating to a high heat dissipation power semiconductor module and module connection components. Background Technology

[0002] Currently, power semiconductor modules are widely used in frequency conversion, inverters, and other fields. However, with the rise of the new energy vehicle industry, existing module packaging processes cannot meet the high integration and high reliability requirements of the automotive field, especially for power semiconductor chips produced using third-generation semiconductor materials such as silicon carbide. With the development of power semiconductor technology, modern power devices are showing a trend of "high power density" and "miniaturization" in parallel. This trend poses a dual challenge to semiconductor packaging technology.

[0003] Current power module heat dissipation technology has reached a bottleneck. Although the industry-standard double-sided heat dissipation structure has achieved approximately 40% higher heat dissipation efficiency than traditional single-sided heat dissipation solutions, when the module operating temperature exceeds 150°C, existing internal insulation structures (such as conventional 0.32mm Al2O3 ceramic substrates) form a significant thermal resistance layer, leading to heat accumulation at the chip-insulator interface. This heat accumulation phenomenon causes two key technical challenges: 1. Mismatch in the coefficient of thermal expansion (CTE) of the insulating material can induce interface delamination; 2. The thermal conductivity of the insulating layer (typically <100W / mK) becomes a bottleneck in the entire heat dissipation path. Utility Model Content

[0004] The purpose of this invention is to provide a high-heat-dissipation-power semiconductor module and module connection components to solve the above-mentioned technical problems.

[0005] This application provides a high heat dissipation power semiconductor module, including: Packaging materials; The first and second heat sinks are located within the encapsulation material; each heat sink has power terminals at both ends. A plurality of power chips are disposed between a first heat sink and a second heat sink; the back and front sides of the power chips are respectively connected to the first heat sink and the second heat sink; and The signal terminals are connected to the power chip; among them The radiator has internal heat dissipation channels for the flow of cooling medium. The power terminal has a heat dissipation channel that communicates with the heat dissipation flow channel.

[0006] In one embodiment of this application, a metal shim is provided between the power chip and the second heat sink.

[0007] In one embodiment of this application, the power terminal and signal terminal extend beyond the encapsulation material.

[0008] In one embodiment of this application, a turbulence structure is provided in the heat dissipation channel.

[0009] In one embodiment of this application, the signal terminal is integrally formed with a heat sink.

[0010] In one embodiment of this application, the shape of the metal shim block is a regular prism, an inverted frustum, or a frustum of a cone.

[0011] In one embodiment of this application, the power chip includes transistors.

[0012] Accordingly, this application provides a module connection component, including: Includes at least two high-heat-dissipation-power semiconductor modules as described above; A liquid inlet metal conduit; the liquid inlet metal conduit is connected to the liquid inlet power terminal of the second heat sink of each high-power semiconductor module via a metal connector, and is connected to the liquid inlet power terminal of the first heat sink of each high-power semiconductor module via an insulating connector; and The liquid outlet metal conduit is connected to the liquid outlet power terminal of the first heat sink of each high heat dissipation power semiconductor module through a metal connector, and to the liquid outlet power terminal of the second heat sink of each high heat dissipation power semiconductor module through an insulating connector.

[0013] Accordingly, this application provides a module connection component, including: A first power semiconductor module and a second power semiconductor module; the power semiconductor module adopts the high heat dissipation power semiconductor module as described above; the liquid outlet power terminal of the first heat sink of the first power semiconductor module is connected to the liquid inlet power terminal of the first heat sink of the second power semiconductor module through an insulating connector, and the liquid outlet power terminal of the second heat sink of the first power semiconductor module is connected to the liquid inlet power terminal of the second heat sink of the second power semiconductor module through a metal connector; A liquid inlet metal conduit; the liquid inlet metal conduit is connected to the liquid inlet power terminal of the first heat sink of the first power semiconductor module through a metal connector, and is connected to the liquid inlet power terminal of the second heat sink of the first power semiconductor module through an insulating connector; A liquid outlet metal conduit; the liquid outlet metal conduit is connected to the liquid outlet power terminal of the first heat sink of the second power semiconductor module via a metal connector, and is connected to the liquid outlet power terminal of the second heat sink of the second power semiconductor module via an insulating connector; and The metal terminal is connected to the liquid outlet power terminal of the second heat sink of the first power semiconductor module.

[0014] The beneficial effects of this utility model are: Unlike existing technologies, this application provides a high-heat-dissipation power semiconductor module, comprising: an encapsulation material; a first heat sink and a second heat sink located within the encapsulation material; power terminals respectively disposed at both ends of each heat sink; a plurality of power chips disposed between the first and second heat sinks; the back and front sides of the power chips being connected to the first and second heat sinks respectively; and signal terminals connected to the power chips; wherein the heat sinks have internal heat dissipation channels for the flow of cooling medium; and the power terminals have internal heat dissipation channels communicating with the heat dissipation channels. This application's high-heat-dissipation power semiconductor module reconstructs the traditional "power chip-insulating layer-heat sink" structure into a novel heat dissipation topology of "power chip-conductive heat dissipation channel-external insulation," while the exposed terminals perform both commutation and energy conversion functions, resulting in a novel high-heat-dissipation power semiconductor module with shortened heat dissipation paths, reduced interface thermal resistance, and adapted interface thermal expansion coefficients.

[0015] Other features and advantages of this invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objectives and other advantages of this invention are realized and obtained through the structures particularly pointed out in the description and the accompanying drawings.

[0016] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0017] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0018] Figure 1 This is a cross-sectional view of a high heat dissipation power semiconductor module according to a preferred embodiment of the present invention; Figure 2 This is a top view of a high heat dissipation power semiconductor module according to a preferred embodiment of the present invention; Figure 3 , Figure 4 and Figure 5 These are cross-sectional views of the heat sinks according to some embodiments of this utility model; Figure 6 This is a schematic diagram of a module connection component according to a preferred embodiment of the present invention; Figure 7 This is a topology diagram of a module connection component according to a preferred embodiment of the present invention; Figure 8 This is a schematic diagram of the heat dissipation path of the module connection component according to a preferred embodiment of the present invention; Figure 9 This is a schematic diagram of current transmission in a module connection component according to a preferred embodiment of the present invention; Figure 10 This is a schematic diagram of a module connection component according to another preferred embodiment of the present invention; Figure 11 This is a topology diagram of the module connection component of another preferred embodiment of the present invention; Figure 12 This is a schematic diagram of the heat dissipation path of the module connection component according to another preferred embodiment of the present invention; Figure 13 This is a schematic diagram of current transmission in a module connection component according to another preferred embodiment of the present invention.

[0019] In the picture: Packaging materials 1, first heat sink 2, second heat sink 3, power chip 4, signal terminal 5, metal wire 51, heat dissipation channel 6, fin 61, turbulence column 62, shark fin 63, heat dissipation channel 7, metal pad 8, power terminal 9, metal paste 10. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0021] This application provides a high-heat-dissipation-power semiconductor module and a module connection component, which are described in detail below. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments of this application. Furthermore, in the following embodiments, the descriptions of each embodiment have their own emphasis; parts not described in detail in a certain embodiment can be referred to in the relevant descriptions of other embodiments.

[0022] See Figure 1 , Figure 2 and Figure 3 In one embodiment, the high heat dissipation power semiconductor module includes: Encapsulation material 1; The first heat sink 2 and the second heat sink 3 are located inside the encapsulation material 1; each heat sink has a power terminal 9 at both ends. Several power chips 4 are disposed between a first heat sink 2 and a second heat sink 3; the back and front sides of the power chips 4 are respectively connected to the first heat sink 2 and the second heat sink 3; and Signal terminal 5 is connected to power chip 4; where The radiator is provided with a heat dissipation channel 6 for the flow of cooling medium. The power terminal 9 has a heat dissipation channel 7 that communicates with the heat dissipation channel 6.

[0023] In this embodiment, the heat dissipation channel 7 and the heat dissipation flow channel 6 can be used for the flow of cooling medium. By reconstructing the traditional "power chip-insulating layer-heat sink" structure into a new heat dissipation topology of "power chip-conductive heat dissipation channel-external insulation", and with the exposed power terminal 9 undertaking the dual functions of commutation and energy conversion, a new type of high heat dissipation power semiconductor module with shortened heat dissipation path, reduced interface thermal resistance, and adapted interface thermal expansion coefficient can be obtained.

[0024] In this embodiment, optionally, a metal shim 8 is provided between the power chip 4 and the second heat sink 3. That is, the front side of the power chip 4 is connected to the second heat sink 3 through the metal shim 8, and the metal shim 8 can be used to transmit current and conduct heat. In some embodiments, the power chip 4 can be a metal-clad semiconductor power chip, and the metal shim 8 is fixedly connected to the metal-clad semiconductor power chip.

[0025] In some embodiments, the power chip 4 includes transistors, such as bipolar transistors, field-effect transistors, thin-film transistors, etc.

[0026] Optionally, the metal riser block 8 is in the shape of a regular prism. In some embodiments, the metal riser block 8 can be an inverted frustum or truncated cone, with its larger base surface connected to the power chip 4. Optionally, the metal riser block 8 can be made of, but is not limited to, Cu, Mo, MoCu alloy, AlSiC, etc.

[0027] Further, see Figures 3 to 5 The heat dissipation channel 6 is provided with a turbulence structure. Optionally, the turbulence structure may include, but is not limited to, fins 61, turbulence columns 62, or shark fin-like structures 63.

[0028] In some embodiments, the first heat sink 2 and the second heat sink 3 can be formed by machining or die casting, and more preferably, a turbulence structure can be formed inside the heat sink by 3D printing. The first heat sink 2 and the second heat sink 3 can be made of metal materials with good thermal conductivity, such as oxygen-free copper.

[0029] Optionally, the power terminal 9 and signal terminal 5 extend beyond the encapsulation material 1. The power terminal 9 can be connected to other power terminals 9 or heat dissipation medium delivery pipes via insulating connectors or metal connectors.

[0030] Optionally, the signal terminal 5 is integrally formed with a heat sink. For example, the signal terminal 5 and the second heat sink 3 can be integrally formed before the gold cutting process. This method greatly reduces the packaging difficulty of the double-sided heat dissipation structure and is usually made of oxygen-free copper or the like.

[0031] Optionally, the signal terminal 5 and the metal wire 51 are fixedly connected by ultrasonic welding, soft soldering or metal paste sintering; the metal wire 51 is fixedly connected to the signal control area of ​​the power chip 4 and the pattern layer of the signal terminal by ultrasonic welding to achieve the purpose of transmitting control signals; In some embodiments, the back side of the power chip 4 is sintered onto the first heat sink 2 by metal paste 10; the metal shim block 8 is simultaneously fixedly connected to the front side of the power chip 4 and the second heat sink 3 by soldering or sintering the metal paste 10.

[0032] In some embodiments, the encapsulation material 1 can be used to fill the exterior of the first heat sink 2 and the second heat sink 3, as well as the gap between them, with epoxy resin or other suitable dielectric material through hot-press injection molding to achieve electrical isolation and physical protection of the devices. Typically, the epoxy molding thickness outside the first heat sink 2 and the second heat sink 3 needs to meet insulation requirements. Optionally, the molding thickness outside the upper heat sink 2 and the second heat sink 3 is the same. In other embodiments, the epoxy molding thickness outside the upper first heat sink 2 and the second heat sink 3 can be set with different thickness ratios to adapt to different application scenarios.

[0033] In some application scenarios, depending on the different usage scenarios of the power module, the power terminal 9 of the high heat dissipation power semiconductor module can be connected to the power terminal 9 of other high heat dissipation power semiconductor modules or heat dissipation medium delivery pipes, metal terminals, etc., through metal connectors 201 and insulating connectors 202 to configure it into a module connection component.

[0034] In one embodiment, see Figure 6 It is a modular connection component. Figure 7 Its circuit topology is often used in high-power applications, where multiple high-power-dissipation semiconductor modules can be connected in parallel to increase power. It should be noted that... Figure 7 This embodiment shows only two high-power semiconductor modules; adding more high-power semiconductor modules in parallel is also an extension of this embodiment.

[0035] Specifically, the module connection component includes: Includes at least two high heat dissipation power semiconductor modules 100a and 100b as described above; Liquid inlet metal conduit 203; the liquid inlet metal conduit 203 is connected via metal connectors 201 to the liquid inlet power terminals 103a and 103b of the second heat sink 3 of the high heat dissipation power semiconductor modules 100a and 100b, respectively, and via insulating connectors 202 to the liquid inlet power terminals 107a and 107b of the first heat sink 2 of the high heat dissipation power semiconductor modules 100a and 100b, respectively; and Liquid outlet metal conduit 204; the liquid outlet metal conduit 204 is connected to the liquid outlet power terminals 106a and 106b of the first heat sink 2 of the high heat dissipation power semiconductor modules 100a and 100b respectively through metal connectors 201, and is connected to the liquid outlet power terminals 102a and 102b of the second heat sink 3 of the high heat dissipation power semiconductor modules 100a and 100b respectively through insulating connectors 202.

[0036] In this embodiment, the exposed signal terminals 104a of the high heat dissipation power semiconductor module 100a and 104b of the high heat dissipation power semiconductor module 100b can be coupled together to use the same driver signal, or they can each receive their own driver signals to work.

[0037] See Figure 8 and Figure 9 This diagram illustrates the heat dissipation path and current transmission. In some embodiments, the same layout can also be configured using different metal connectors 201 and insulating connectors 202 to achieve various different circuit topologies and current transmission directions.

[0038] In another embodiment, see Figure 10 It is a modular connection component. Figure 11 Its circuit topology is the most common half-bridge topology, frequently found in frequency converter, rectifier, and inverter applications. Additionally, it can be obtained through... Figure 6 Multiple high-power-dissipation semiconductor modules are connected in parallel to increase power. It should be noted that... Figure 10 This is just a common half-bridge topology; other circuit topologies that use the structure of this embodiment are also extensions of this embodiment.

[0039] Specifically, the module connection components include: A first power semiconductor module 100d and a second power semiconductor module 100c; the power semiconductor modules are high heat dissipation power semiconductor modules as described above; the liquid outlet power terminal 103d of the first heat sink 2 of the first power semiconductor module 100d is connected to the liquid inlet power terminal 107c of the first heat sink 2 of the second power semiconductor module 100c through an insulating connector 202, and the liquid outlet power terminal 107d of the second heat sink 3 of the first power semiconductor module 100d is connected to the liquid inlet power terminal 103c of the second heat sink 3 of the second power semiconductor module 100c through a metal connector 201; Liquid inlet metal conduit 100; the liquid inlet metal conduit 100 is connected to the liquid inlet power terminal 102d of the first heat sink 2 of the first power semiconductor module 100d through a metal connector 201, and is connected to the liquid inlet power terminal 106d of the second heat sink 3 of the first power semiconductor module 100d through an insulating connector 202. A liquid outlet metal conduit 200; the liquid outlet metal conduit 200 is connected to the liquid outlet power terminal 106c of the first heat sink 2 of the second power semiconductor module 100c via a metal connector 201, and to the liquid outlet power terminal 102c of the second heat sink 3 of the second power semiconductor module 100c via an insulating connector 202; and Metal terminal 206 is connected to the liquid outlet power terminal 107d of the second heat sink 3 of the first power semiconductor module 100d; of course, in other embodiments, metal terminal 206 can also be connected to terminal 103c, or it can be a metal connector 201 connecting terminal 107d and terminal 103c.

[0040] In this embodiment, the exposed signal terminals 104c of the second power semiconductor module 100c and the exposed signal terminals 104d of the first power semiconductor module 100d typically receive drive signals from two different drivers to enable the devices between the upper and lower bridge arms to operate.

[0041] See Figure 12 and Figure 13 This diagram illustrates the heat dissipation path and current transmission. In other embodiments, the same layout can be used to achieve various different circuit topologies and current transmission directions by using different metal connectors 201 and insulating connectors 202.

[0042] It should be noted that all the devices (parts whose specific structures are not specified) selected in this application are general standard parts or parts known to those skilled in the art, and their structures and principles can be known to those skilled in the art through technical manuals or conventional experimental methods.

[0043] In the description of the embodiments of this utility model, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0044] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this utility model and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0045] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the present utility model in any way. Although the present utility model has been disclosed above with reference to a preferred embodiment, it is not intended to limit the present utility model. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present utility model. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present utility model without departing from the scope of the present utility model shall still fall within the scope of the present utility model.

Claims

1. A high heat dissipating power semiconductor module, characterized by, include: Packaging materials; The first and second heat sinks are located within the encapsulation material; each heat sink has power terminals at both ends. A plurality of power chips are disposed between a first heat sink and a second heat sink; the back and front sides of the power chips are respectively connected to the first heat sink and the second heat sink; and The signal terminals connect to the power chip; among them The radiator has internal heat dissipation channels for the flow of cooling medium. The power terminal has a heat dissipation channel that communicates with the heat dissipation flow channel.

2. The high heat dissipation power semiconductor module according to claim 1, characterized in that, A metal shim is provided between the power chip and the second heat sink.

3. The high heat dissipation power semiconductor module according to claim 1, characterized in that, The power terminals and signal terminals extend out of the encapsulation material.

4. The high heat dissipation power semiconductor module according to claim 1, characterized in that, A turbulence-inducing structure is provided inside the heat dissipation channel.

5. The high heat dissipation power semiconductor module according to claim 1, characterized in that, The signal terminal is integrally formed with a heat sink.

6. The high heat dissipation power semiconductor module according to claim 2, characterized in that, The metal shims are in the shape of a regular prism, an inverted frustum, or a frustum of a cone.

7. The high heat dissipation power semiconductor module according to claim 1, characterized in that, The power chip includes transistors.

8. A modular connection component, characterized in that, include: Includes at least two high heat dissipation power semiconductor modules as described in any one of claims 1-7; A liquid inlet metal conduit; the liquid inlet metal conduit is connected to the liquid inlet power terminal of the second heat sink of each high-power semiconductor module via a metal connector, and is connected to the liquid inlet power terminal of the first heat sink of each high-power semiconductor module via an insulating connector; and The liquid outlet metal conduit is connected to the liquid outlet power terminal of the first heat sink of each high heat dissipation power semiconductor module through a metal connector, and to the liquid outlet power terminal of the second heat sink of each high heat dissipation power semiconductor module through an insulating connector.

9. A modular connection component, characterized in that, include: A first power semiconductor module and a second power semiconductor module; the power semiconductor module is a high heat dissipation power semiconductor module as described in any one of claims 1-7; The liquid outlet power terminal of the first heat sink of the first power semiconductor module is connected to the liquid inlet power terminal of the first heat sink of the second power semiconductor module through an insulating connector, and the liquid outlet power terminal of the second heat sink of the first power semiconductor module is connected to the liquid inlet power terminal of the second heat sink of the second power semiconductor module through a metal connector; A liquid inlet metal conduit; the liquid inlet metal conduit is connected to the liquid inlet power terminal of the first heat sink of the first power semiconductor module through a metal connector, and is connected to the liquid inlet power terminal of the second heat sink of the first power semiconductor module through an insulating connector; A liquid outlet metal conduit; the liquid outlet metal conduit is connected to the liquid outlet power terminal of the first heat sink of the second power semiconductor module via a metal connector, and is connected to the liquid outlet power terminal of the second heat sink of the second power semiconductor module via an insulating connector; and The metal terminal is connected to the liquid outlet power terminal of the second heat sink of the first power semiconductor module.

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