Field effect transistor (DFN3X2-5L)
CN309136263SActive Publication Date: 2025-02-25SHENZHEN YOUJING MICROELECTRONICS TECH CO LTD
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Patent Information
- Application Number
- CN202430475681.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-29
- Publication Date
- 2025-02-25
- Estimated Expiration
- 2039-07-29
Smart Images
Figure 000006_ABST
Abstract
1. The name of this design product: Field Effect Transistor (DFN3X2‑5L). 2. Purpose of this design product: Complementary three-core MOS functions to control the direction and size of current in the circuit and is responsible for converting control signals into output signals. 3. The design key point of this appearance design product lies in the shape. 4. The picture or photo that best illustrates the design points: three-dimensional picture.
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