Microwave plasma chemical vapor deposition equipment reaction chamber cover
CN310088258SActive Publication Date: 2026-07-14CHINA ELECTRONICS TECHNOLOGY THIRD GENERATION SEMICONDUCTOR TECHNOLOGY INNOVATION (HUNAN) CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- CHINA ELECTRONICS TECHNOLOGY THIRD GENERATION SEMICONDUCTOR TECHNOLOGY INNOVATION (HUNAN) CO LTD
- Filing Date
- 2025-12-10
- Publication Date
- 2026-07-14
Smart Images
Figure 000012_ABST
Abstract
1. Name of the product in this design: Reaction chamber cover for microwave plasma chemical vapor deposition equipment. 2. Application of this design: for use in microwave plasma chemical vapor deposition equipment. 3. The key design feature of this product is its shape. 4. The image or photo that best illustrates the design's key points: Open 3D view. 5. The bottom surface of this product is a part that is not easily seen or cannot be seen during use, so the bottom view is omitted.
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