High-power nanosecond laser (M2)
CN310131387SActive Publication Date: 2026-08-04HEFEI MAIRUI OPTOELECTRONICS TECH CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- HEFEI MAIRUI OPTOELECTRONICS TECH CO LTD
- Filing Date
- 2026-02-26
- Publication Date
- 2026-08-04
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Figure 000007_ABST
Abstract
1. Name of the product in this design: High-power nanosecond laser (M2). 2. Purpose of this design: To output high peak power and high energy from pulsed laser light of a specific wavelength. 3. The key design features of this product are the combination of shape and pattern. 4. The image or photograph that best illustrates the design's key points: a 3D model.
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