OLED for operation with alternating voltage and manufacturing process

Abstract

OLED with - an anode (A), - a cathode (C) and - an emitter layer (EML) located between the anode (A) and the cathode (C), in which - a mixed-doped layer (ML; ML1, ML2) is arranged between the anode (A) and the emitter layer (EML) and between the cathode (C) and the emitter layer (EML), - the mixed-doped layer (ML, ML1, ML2) includes p-doped regions and n-doped regions, - a first mixed-doped layer (ML, ML1) is arranged directly at the anode (A), - a second mixed-doped layer (ML, ML2) is arranged directly at the cathode (C), - the n-doped regions and the p-doped regions within the mixed-doped layer (ML, ML1, ML2) are arranged sequentially in the lateral direction and at different distances from each other, - in which a hole injection layer (HIL) and a hole transport layer (HTL) are present between the anode (A) and the emitter layer (EML) and - in which an electron injection layer (EIL), an electron transport layer (ETL) and a hole blocking layer (HBL) are present between the cathode (C) and the emitter layer (EML).