Electrical connection device
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- NIHON MICRONICS KK
- Filing Date
- 2014-07-07
- Publication Date
- 2026-07-09
Smart Images
Figure 00000000_0000_ABST
Abstract
Description
RELATED REGISTRATION
[0001] This application claims the benefit and priority of Japanese patent application JP 2013-142391, which was filed on July 8, 2013. TECHNICAL AREA
[0002] The subject matter relates to an electrical connection device for use in an electrical test of a flat, plate-like component in the test, such as an integrated circuit, and specifically relates to an electrical connection device that enables an electrical test to be started within a short period of time. BACKGROUND
[0003] Generally, integrated circuits formed on a semiconductor wafer are subjected to electrical testing to determine whether they exhibit predetermined electrical properties (that is, to determine whether the integrated circuits are good or not). In such a test, all of the integrated circuits on a wafer are tested at one time or in several batches using an electrical interconnect device that electrically connects the electrodes of the integrated circuits to the electrical circuits of a test fixture.
[0004] The electrical connection device for use in such a test comprises a conductor base plate having a plurality of connection areas for electrical connection to the electrical circuits of the test device, a probe plate arranged on a lower side of the conductor base plate having a plurality of internal wires electrically connected to the connection areas, and a plurality of contacts (i.e., probes) attached to a lower surface of the probe plate and electrically connected to the internal wires, as described, for example, in patent document 1.
[0005] In recent years, integrated circuits have been tested at high or low temperatures using such an electrical connection device. In this case, the integrated circuits are heated or cooled to a predetermined temperature by a heat source located on a platform on which the integrated circuits are mounted. For example, if the integrated circuits are heated by the heat source, the probe plate, which has the contacts on it, is also heated by absorbing radiant heat from the platform and the integrated circuits. This causes the integrated circuits and the probe plate to expand thermally.
[0006] However, since the thermal expansion coefficient of the semiconductor wafer and the thermal expansion coefficient of the probe plate differ, the relative positional relationship between the electrodes of the integrated semiconductor circuits and the tip ends of the contacts changes, and there are inevitably contacts whose tip ends are not pressed onto the electrodes of the integrated semiconductor circuits.
[0007] The semiconductor wafer is heated by the heat source provided in the stage to ensure that its temperature remains constant even after several hours. The probe plate is also heated by radiant heat to maintain the temperature of the semiconductor wafer at a constant level even after several hours. Since a measurement can only be initiated once the temperatures are stable and the relative positions between the electrodes of the integrated circuits and the tips of the contacts are stable, it takes a considerable amount of time before a measurement can begin.
[0008] Patent document 2 proposes an electrical connection device in which a probe plate with a heat-generating body is provided, the temperature of the probe plate is measured, and electrical energy for heating, which is supplied to the heat-generating body, is controlled based on the measured values. Reference list of patent documents
[0009] [Patent Document 1]: Japanese National Patent Application Publication No. 2011-89891 [Patent Document 2]: Japanese National Patent Application Publication No. 2010-151740 SUMMARY
[0010] However, the electrical connection device described in patent document 2 is provided in the probe plate with the heat-generating body, which causes a problem of complicating the device design and control procedure.
[0011] An electrical connection device is provided which reduces the time until the start of the measurement using a simple device setup.
[0012] In a first aspect, an electrical connection device according to one embodiment is an electrical connection device comprising a clamping table which holds a component under test on a working surface of the clamping table, the component having a plurality of electrodes, and which heats and cools the component under test, and which connects the plurality of electrodes to a tester, and which includes a probe card comprising a probe plate having a first surface of it facing the tester and having a conductor track formed in it for electrical connection to the tester, and a plurality of probes provided on a second surface of the probe plate for connection to the conductor track and for enabling the plurality of electrodes of the component under test to be contacted on the clamping table and moved relative to the clamping table accordingly;and comprising one or a plurality of elastic heat conduction elements arranged between the working surface of the clamping table or the component under test on the working surface and the probe plate, wherein the elastic heat conduction element enables it to bear against the working surface of the clamping table or the component under test on the working surface and the probe plate in a state in which the plurality of probes does not bear against the plurality of respective corresponding electrodes, and wherein it is elastically deformable so as not to prevent bearing between the plurality of probes and the plurality of respective corresponding electrodes.
[0013] Furthermore, in a second aspect, the elastic heat conduction element in the electrical connection device according to the embodiment, in a free state in which no elastic compression is experienced between the working surface of the clamping table or the component in the test on the working surface and the probe plate, has a longer extension than the distance from the probe plate to the tip ends of the probes.
[0014] Furthermore, in a third aspect, the elastic heat conduction element in the electrical connection device according to the embodiment is fixed at a first end of it to the second surface of the probe card and at a second end of it points towards the component in the test, passing over the tip ends of the probe plate.
[0015] Furthermore, in a fourth aspect, the elastic heat conduction element of the electrical connection device according to the embodiment is made of heat-conducting silicone rubber.
[0016] Furthermore, in a fifth aspect, the elastic heat conduction elements of the electrical connection device according to the embodiment are a plurality of column-like bodies, and are arranged in such a way that they surround a correspondingly arranged area of the probes from the probe plate.
[0017] Furthermore, in a sixth aspect, the elastic heat conduction element of the electrical connection device according to the embodiment is a ring-shaped element that is arranged in such a way that it surrounds the correspondingly arranged area of the probes from the probe plate.
[0018] With the electrical connection device according to the embodiment, it is possible to shorten the time until the start of a measurement using a simple device setup. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Fig. Figure 1 illustrates an entire structure that includes an electrical connection device according to a first embodiment.
[0020] Fig. Figure 2 schematically illustrates a structure of the electrical connection device according to the first embodiment.
[0021] Fig. Figure 3 is a view of a probe plate contained in the electrical connection device according to the first embodiment, seen from a lower side.
[0022] Fig. 4A to Fig. Figure 4C shows side views describing a connection between probes contained in the electrical connection device according to the first embodiment and their respective connection fields. Fig. Figure 4A illustrates a state of an elastic heat conduction element in the case where a clamping device top is in a start state. Fig. Figure 4B illustrates a state in which a step mechanism raises the top of the clamping device, and in which a tip end of a lower region of the elastic heat conduction element rests against a semiconductor wafer, and Fig. Figure 4C illustrates a state in which the step mechanism further raises the top of the clamping device, and in which the probes are in contact with the respective corresponding connection fields.
[0023] Fig. Figure 5 shows a top view illustrating an electrical connector included in the electrical connection device according to the first embodiment.
[0024] Fig. Figure 6 illustrates changes from a position of the probe, which is provided at a certain point away from a center of the disk-shaped probe plate included in the electrical connection device according to the first embodiment, and a position of the connection field of a chip or DUT chip, which is arranged at a certain point away from a center of the disk-shaped semiconductor wafer.
[0025] Fig. Figure 7 illustrates temperature changes up to the start of the measurement in the case where heating is started by a heat source in the top of the clamping device.
[0026] Fig. Figure 8 schematically illustrates a structure of the electrical connection device according to a second embodiment.
[0027] Fig. Figure 9 schematically illustrates a structure of the electrical connection device according to a third embodiment.
[0028] Fig. 10A and Fig. Figure 10B shows views of the probe plate contained in the electrical connection device according to a fourth embodiment, viewed from a lower side. Fig. 10A illustrates a first concern, while Fig. 10B illustrates a second concern. DETAILED DESCRIPTION
[0029] An electrical connection device according to the embodiments is described in detail below with reference to the figures. <Erste Ausführungsform>
[0030] Fig. Figure 1 illustrates a complete structure that includes an electrical connection device according to a first embodiment, and Fig. Figure 2 schematically illustrates a structure of the electrical connection device according to the first embodiment.
[0031] As in Fig. 1 and Fig. 2 illustrated, contains an electrical connection device 1 according to the first embodiment, a flat, plate-like support element (a stiffener) 12 , whose lower surface is a flat mounting reference surface, a circular, flat, plate-like conductor base plate 14 , which are located on the mounting level of the support element 12 is a circular, flat, plate-like probe map 19 , which are semiconductor wafers 28 , how a component is contacted in the test, and an electrical connector 16 , which is the conductor base plate 14electrically with the probe card 19 connects and from a holder 20 is held.
[0032] The bracket 20 is from a probe base 23 supported and features a crank-like cross-sectional structure to support the electrical connection device 1 to record the bracket 20 also features support pins 20a on, which are adapted to the support element 12 and the conductor base plate 14 the electrical connection device 1 to support.
[0033] The support element 12 is equipped with through holes 12b , which is the support element 12 designed to penetrate vertically, while the conductor base plate 14 with through holes 14b is intended to be the conductor base plate 14 penetrate vertically. The support pins 20a are in the through holes 12b and into the through holes14b attached to cause the support element 12 and the conductor base plate 14 from the bracket 20 is supported.
[0034] The electrical connection device 1 is used to connect appropriate connection fields (electrodes) such as terminals of multiple chips or DUT chips (integrated circuits) that are located on the semiconductor wafer. 28 are trained to work with electrical circuits, as determined by an examiner. 11 for electrical testing, for example to connect chips or DUT chips.
[0035] Thus, the complete structure includes a clamping device top. 21 , which on an upper surface of the clamping device top the semiconductor wafer 28 which is equipped with corresponding connection fields (electrodes), such as the terminals of the chips or DUT chips, to connect the semiconductor wafer 28Detachable by vacuum suction, and a step mechanism 22 , which is the top of the clamping device 21 moved vertically. Through the vertical movement of the step mechanism 22 , the chips or DUT chips are placed on the semiconductor wafer 28 with the probe card 19 the electrical connection device 1 brought into contact for an electrical test by the tester 11 to carry out.
[0036] Furthermore, the top of the clamping device contains a heat source. 24 , which the semiconductor wafer mounted on it 28 It heats or cools. The semiconductor wafer 28 is caused by this heat source 24 heated or cooled, and the probe card 19 is caused by the radiant heat from the heat source 24 heated or cooled.
[0037] The conductor base plate 14is, for example, made from a completely circular, plate-like, polyimide resin plate, and is connected to a top surface (first surface) of the conductor base plate with connecting wires. 12a planned, which with the examiner 11 are connected.
[0038] Furthermore, a lower surface of the conductor base plate 14 with connection surface areas (not shown) provided for use with the connecting wires 12a via conductor tracks 14 , which are formed in the circuit board base plate to be electrically connected.
[0039] The support element 12 includes a plate-like frame element, for example made of a stainless steel plate, which is arranged with the mounting plane of the support element, which is on the upper surface of the conductor base plate 14 is pending.
[0040] The probe card 19 contains a probe plate 18and probes 18a .
[0041] The probe card 18 contains a support element 18d , which is made, for example, from a ceramic plate, and contains a multilayer conductive layer 18c , which are located on a lower surface of the support element 18d or is formed on the ceramic plate. The multilayer conductor layer 18c features a multilayer plate, for example made from a polyimide resin material, which has electrically insulating properties and has conductive tracks 18e on, which are formed between corresponding layers of the multilayer plate.
[0042] A lower surface (second surface) of the multilayer conductor layer 18c is equipped with probe connection surfaces 18b provided for, which are accordingly connected to the conductor tracks 18e the multilayer conductor layers 18c are electrically connected.
[0043] Each probe 18a is at one upper end of the probe with the corresponding probe connection surface 18b the probe plate 18 connected, and is therefore attached to the probe plate 18 attached so that they are separated from the lower surface of the multilayer conductor layer 18c protrudes downwards, and with the conductor track 18e the multilayer conductor layer 18c is connected.
[0044] The lower surface (second surface) of the multilayer conductor layer 18c continues with elastic heat conduction elements 18h provided, which have an elasticity such as low-hardness silicone rubber, which are formed in slit-like shapes from a thermally conductive material, and which are arranged to, for example, surround an area of the probes. 18a the probe plate 18 to surround.
[0045] Fig. Figure 3 shows a view of the probe plate 18, which is in the electrical connection device 1 as arranged according to the first embodiment, from the perspective of a lower side. It should be noted that in Fig. 3 a position of the semiconductor wafer 28 and positions of the connection fields 28a the multiple chips or DUT chips that are placed on the semiconductor wafer 28 They are formed and illustrated by dashed lines.
[0046] As in Fig. Figure 3 illustrates the lower surface of the probe plate with twelve elastic heat conduction elements. 18h provided which are arranged in a column-like form, and wherein these elastic heat conduction elements 18h are arranged so that they form the connecting fields 28a the multiple chips or DUT chips that are placed on the semiconductor wafer 28 They are trained, do not contact them.
[0047] The elastic heat conduction elements 18hare intended to allow access to areas of the semiconductor wafer 28 to be concerned, with the exception of the areas connected to the connecting fields 28a are provided for, and that the lower surface of the probe plate 18 is in a state where the probes 18a not at the respective corresponding connection fields 28a fit snugly and are elastically deformable to ensure contact between the probes 18a and the respective corresponding connection fields 28a cannot be prevented.
[0048] Fig. 4A to Fig. 4C are side views showing the area between the probes. 18a , which is in the electrical connection device 1 according to the first embodiment, and the respective corresponding connection fields. 28a describe. Fig. Figure 4A illustrates a state of the elastic heat conduction element. 18hin case the clamping device top 21 is in a start state Fig. 4B illustrates a state in which the step mechanism 22 the top of the clamping device 21 increased, and in which a tip end from a lower region of the elastic heat conduction element 18h on the semiconductor wafer 28 is involved, and Fig. 4C illustrates a state in which the step mechanism 22 the top of the clamping device 21 further increased, and in which the probes 18a on the respective corresponding connection fields 28a issue.
[0049] As in Fig. Figure 4A illustrates the elastic heat conduction element 18h in a state in which the clamping device top 21 is in a starting state, that is, in a free state in which the elastic heat conduction element 18hno elastic compression between the semiconductor wafer 28 on the top of the clamping device 21 and the probe plate 18 The probe has a total length of 1200 mm, which is longer than a distance (1000 mm) from the probe plate. 18 to the tips of the probes 18a is.
[0050] Then, as in Fig. As illustrated in 4B, the tip end lies at the bottom of the elastic heat conduction element. 18h on the semiconductor wafer 28 on, when the step mechanism 22 the top of the clamping device 21 increased. When the tip end is separated from the lower area of the elastic heat conduction element. 18h on the semiconductor wafer 28 When applied in this manner, heat is drawn from the heat source. 24 , which are located on the top of the clamping device 21 is intended to be added to the semiconductor wafer 28 and the probe plate 18transferred. The time until the probe plate 18 a thermal equilibrium is reached, in the event that the temperature of the probe plate 18 The time until the start of the measurement can be shortened, as it increases only through radiant heat.
[0051] Then, when the probe plate 18 Once thermal equilibrium is reached, the step mechanism increases 22 the top of the clamping device 21 further and causes the probes 18a on the respective corresponding connection fields 28a The elastic heat conduction element is present at this point. 18h elastically deformed to accommodate the pressure between the probes 18a and the respective corresponding connection fields 28a This cannot be prevented. The corresponding connection fields will be used. 28a of the semiconductor wafer 28 and the examiner 11electrically connected, and an electrical test is performed.
[0052] Returning to Fig. 2 is an upper surface (first surface) of the support element 18d the probe plate 18 with connection surface areas (not illustrated) provided at positions corresponding to the lower surface (second surface) of the conductor base plate 14 The connection areas correspond to the designated connection surface areas. The connection surface areas that are on the probe plate 18 are provided for, accordingly via the conductor tracks 18e the multilayer conductor layer 18c with the respective probes 18a electrically connected.
[0053] Between the probe plate 18 and the conductor base plate 14 is the electrical connector 16 arranged for electrical connection.
[0054] In the electrical connector 16 , as enlarged in Fig. 2 illustrated, is a pogo pin block 16a arranged to fit the conductor base plate 14 to contact, whereby the pogopin block 16a is made from an electrically insulating, plate-like element, and has several through holes formed in it. 161 exhibits features that are formed in a plate thickness direction.
[0055] There is also in every through-hole 161 of the pogopin block 16a a pair of pogopins 16b and 16c arranged in such a way that it is mounted so that it can be moved in an axial direction of the through hole 161 to be, and in a state where falling out of the through-hole is possible 161 This should be prevented. Between each pair of pogopins 16b and 16c , is a compression spring 16d arranged to exert a restoring force on both of the pogo pins 16b and 16cexerts a force in one direction away from each other and acts as a conductor between the pogo pins.
[0056] The Pogopins 16b are provided in positions that correspond to the connection surface areas located on the lower surface (second surface) of the conductor base plate 14 are planned, while the pogopins 16c are provided at positions that correspond to the connection surface areas located on the upper surface (first surface) of the probe plate 18 are planned.
[0057] In an assembled state of the electrical connector 16 are caused by the spring forces of the compression helical springs 16d the pogopins 16b , which are on the conductor base plate 14 are provided to be brought into pressure contact with the connection surface areas, with these being on the lower surface (second surface) of the conductor base plate 14 are planned, and the pogopins16c , which are located on one side of the probe plate 18 The intended surfaces are brought into pressure contact with the connection surface areas located on the upper surface (first surface) of the probe plate. 18 are planned.
[0058] The probes are included. 18a with the corresponding connection surface areas of the conductor base plate 14 electrically connected. Consequently, when the tip ends of the probes 18a on the connecting fields 28a the one on the semiconductor wafer 28 The connection fields are those of trained chips or DUT chips. 28a via the respective probes 18a , the electrical connector 16 and the conductor base plate 14 connected to the tester. Therefore, an electrical test of the integrated circuits on the semiconductor wafer can be performed. 28 be carried out by the examiner.
[0059] As in Fig. Figure 1 illustrates the electrical connector. 16 on an outer circumferential area of the electrical connector with a support element 16f designed with low thermal conductivity, arranged so that its two ends are on the conductor base plate 14 and the probe plate 18 to lie flat, and inside with supporting elements 16g with low thermal conductivity, each arranged so that both ends are on the conductor base plate 14 and the probe plate 18 issue.
[0060] These support elements 16f and 16g Those with low thermal conductivity are made from a heat-insulating element that has a lower thermal conductivity than the pogopin block. 16a , which is made, for example, of plastic, wood and an epoxy resin.
[0061] Fig. 5 is a top view showing the electrical connector 16illustrated, which is in the electrical connection device 1 as described in the first embodiment.
[0062] As in Fig. Figure 5 illustrates the electrical connector. 16 the one with the through holes 161 equipped pogopin block 16a , the ring-shaped support element 16f with low thermal conductivity on the outer circumferential area of the pogopin block 16a , and the supporting elements 16g with low thermal conductivity, arranged in a slit-like shape to protect the pogopin block 16a penetrate.
[0063] In this way the support elements 16f and 16g with low thermal conductivity on the outer surrounding area of and inside the pogopin block 16a arranged so that both ends are on the lower surface of the conductor base plate 14 and the upper surface of the probe plate 18in contact. Heat conduction can occur between the conductor base plate. 14 and the probe plate 18 be reduced, and heat conduction targets from the heat source 24 , which are located on the top of the clamping device 21 The main components are the semiconductor wafer. 28 and the probe plate 18 Since the heat capacity of the heat conduction target (the probe plate) 18 ) through radiant heat and heat conduction through the elastic heat conduction elements 18h It can be small, thus increasing the time until the probe plate 18 Once a thermal equilibrium is reached, the temperature can be reduced, and the time until the start of the measurement can be reduced. thermal equilibrium
[0064] Here, the thermal equilibrium of the probe plate is determined. 18 Described in detail.
[0065] As described above, the top of the clamping device contains 21 the heat source 24, which are the semiconductor wafers mounted on the top of the clamping device 28 It heats or cools. The semiconductor wafer 28 is caused by this heat source 24 heated or cooled, with the probe plate 18 through radiant heat from the heat source 24 and heat conduction through the elastic heat conduction elements 18h is heated or cooled, and the semiconductor wafer 28 and the probe plate 18 They reach a thermal equilibrium.
[0066] For example, in a case of heating by the heat source 24 , if the temperature of the heat source 24 in the top of the clamping device 21 125°C is the temperature of a lower surface of the semiconductor wafer. 28 approximately 122°C, while the lower surface of the probe plate 18 the temperature due to radiant heat is approximately 90°C, and the semiconductor wafer 28 and the probe plate18 at these temperatures they are in a state of thermal equilibrium.
[0067] When the semiconductor wafer 28 and the probe plate 18 When heated in this way, the semiconductor wafer expands. 28 and the probe plate 18 thermal expansion occurs. The positions of the connecting fields change in conjunction with the thermal expansion. 28a the chips or DUT chips that are on the semiconductor wafer 28 are trained, and positions of the probes 18a , located on the lower surface of the probe plate 18 are appropriate. Therefore, the positions of the probes must be determined. 18a be so determined that the tip ends of the probes 18a on the connecting fields 28a the chips or DUT chips that are on the semiconductor wafer 28 are trained, can be applied when the semiconductor wafer 28 and the probe plate 18 to achieve thermal equilibrium.
[0068] Fig. Figure 6 illustrates changes in the position of the probe. 18a , located at a specific point away from the center of the disc-shaped probe plate 18 is provided for in the electrical connection device 1 according to the first embodiment and from a position of the connecting fields 28a of the chip or DUT chip, which is located at a specific point away from the center of the disk-shaped semiconductor wafer. 28 are arranged. A straight line 101 , which in Fig. Figure 6 illustrates changes in the position of the connection field. 28a of the chip or DUT chip, which is located on the semiconductor wafer 28 are formed in accordance with temperature changes, while a straight line 102 Position changes of the probe 18arepresented in accordance with temperature changes. Here, each of the position changes (displacement magnitude) signifies a movement in one direction of an outer circumference relative to a position at a reference standard temperature (assumed to be 23°C).
[0069] A slope of the straight line 101 is used with a coefficient of thermal expansion α1 of the semiconductor wafer 28 determined while a slope of the straight line 102 with a coefficient of thermal expansion α2 of the probe plate 18 is determined. Therefore, the position of the probe must be determined. 18a can be determined in advance so that the positions of the probe 18a and the connecting field 28a , which can be equal from the corresponding coefficients of thermal expansion α1 and α2 at corresponding temperatures T1 and T2, at which thermal equilibrium is reached.
[0070] In particular, the position of the probe will be determined. 18aso determined that the position of the connecting field 28a , when the temperature T1 of the lower surface of the semiconductor wafer 28 when thermal equilibrium is reached, the temperature is 122°C, and the position of the probe 18a , when the temperature T2 of the lower surface of the probe plate 18a The temperature at which thermal equilibrium is reached is 90°C, and may be the same.
[0071] For example, if a displacement quantity, in the direction of the outer perimeter of the connecting field 28a , located at a position 150 (mm) away from the center of the disk shape of the semiconductor wafer 28 In the direction towards the outer circumference at normal temperature (assumed to be 23°C) ΔL1 (mm) is expressed as follows (Equation 1): ΔL1 = 150·α1·ΔT1 (Equation 1)
[0072] In this equation, α1 is a coefficient of thermal expansion of the semiconductor wafer. 28, and ΔT1 is a difference between the normal temperature and a high-temperature side temperature of the semiconductor wafer. 28 at the point of thermal equilibrium.
[0073] Even if a displacement quantity, in the direction of the outer circumference, of the probe 18a , located at a position 150 mm away from the center of the disc shape of the probe plate 18 In the direction towards the outer circumference at normal temperature (assumed to be 23°C) ΔL2 (mm) is expressed as follows (Equation 2): ΔL2 = 150·α2·ΔT2 (Equation 2)
[0074] In this equation, α2 is a coefficient of thermal expansion of the probe plate. 18 , and ΔT2 is a difference between the normal temperature and a high-temperature-side temperature of the probe plate. 18 at the point of thermal equilibrium.
[0075] Here, in order for the position of the connection field to change, 28aand the position of the probe 18a at the time of thermal equilibrium, the position of the probe 18a must be determined in advance so that the relationship of the following equation 3 can hold true: α1 ΔT1 = α2 ΔT2 (Equation 3)
[0076] Meanwhile, only the calculation needs to be performed, where the coefficient of thermal expansion α1 is used in the case that the semiconductor wafer 28 made of silicone, is set at 3.5 (ppm / °C), and the coefficient of thermal expansion α2 in the case that the probe plate 18 mainly consisting of ceramic, is set at 5.5 (ppm / °C).
[0077] The same applies in the case of cooling the semiconductor wafer. 28 and the probe plate 18 , and in a case of heating, the following (equation 4) in a similar way: α1 ΔT'1 = α2 ΔT'2 (Equation 4)
[0078] In this equation, ΔT'1 is a difference between the normal temperature and a low-temperature side temperature of the semiconductor wafer. 28 at the point of thermal equilibrium. ΔT'2 is a difference between the normal temperature and a low-temperature-side temperature of the probe plate. 18 at the point of thermal equilibrium. For example, the position of the probe 18a so that the position of the connecting field is determined 28a , when the temperature T'1 of the lower surface of the semiconductor wafer 28 when thermal equilibrium is reached -37°C (ΔT'1 = 60°C) and the position of the probe 18a , if the temperature T'2 of the lower surface of the probe plate 18 The temperature at which thermal equilibrium is reached is -15(°C) (ΔT'2 = 38°C), which can correspond to each other.
[0079] In this way, the positions of the probes are determined. 18a determined, and the probes 18aare arranged at specific positions to support the probe plate 18 to produce. Therefore, the electrical connection device 1 According to the first embodiment, an electrical test of the semiconductor wafer 28 perform the test at the temperature expressed in (equation 3) or (equation 4). <Ergebnisse der ersten Ausführungsform>
[0080] Next, results from the electrical connection device will be presented. 1 as described in the first embodiment.
[0081] Fig. Figure 7 illustrates temperature changes up to the start of the measurement in a case where heating is provided by the heat source. 24 in the top of the clamping device 21 It is started at time t0. Fig. 7 is a temperature 201 a temperature of the heat source 24 in the top of the clamping device 21the electrical connection device 1 according to the first embodiment, and is a temperature 202 a temperature of the lower surface of the semiconductor wafer 28 the electrical connection device 1 according to the first embodiment. For comparison, a temperature 203 a temperature of a lower surface of a probe plate according to a conventional technique, and a temperature 204 is the temperature of the upper surface of a conductor base plate according to conventional techniques. A temperature 205 is a temperature of the lower surface of the probe plate 18 the electrical connection device 1 according to the first embodiment.
[0082] In conventional technology, when heating is done using a heat source 24 in the clamping device surface 21 When the start occurs at time t0, the corresponding temperatures rise.203 and 204 Up to a time t2, the temperature increase rate is moderate. At this time, the temperature increase ratio of the temperatures decreases. 203 and 204 from when time t2 is reached.
[0083] Subsequently, at time t2, the step mechanism moves 22 upwards, and thus the chips or DUT chips make contact on the semiconductor wafer. 28 and the probe plate of the electrical connection device 1 , which affects heat conduction from the semiconductor wafer 28 to the probe plate. Thus, at time t3, when approximately 120 minutes have passed since time t0, an electrical test of the semiconductor wafer can finally be performed. 28 be performed.
[0084] In this way, since 120 (minutes) are needed from the start of heating until the probe plate reaches a thermal equilibrium, it takes a considerable amount of time to start the measurement with conventional technology.
[0085] On the other hand, if the heating is done by the heat source 24 in the clamping device surface 21 When started, the temperature reaches 205 the lower surface of the probe plate 18 a thermal equilibrium state at time t1, at which approximately 10 (minutes) have passed since time t0, and thus an electrical test of the semiconductor wafer can be performed. 28 be performed.
[0086] Since the electrical connection device 1 according to the first embodiment with the support element 16f is provided with low thermal conductivity, which is arranged so that both of its ends are on the conductor base plate 14and the probe plate 18 If the probe plate is in contact with the surface, heat can be conducted away from it in this way. 18 to the conductor base plate 14 will be reduced. Since the heat capacity of the probe plate 18 may be short, and the time until the probe plate 18 Since reaching thermal equilibrium can take approximately 10 minutes, the time until the start of the measurement can therefore be shortened.
[0087] Since the electrical connection device 1 according to the first embodiment with elastic heat conduction elements 18h It is provided that it is intended to make it possible to work on a surface of the clamping device top. 21 to be applied and to enable the probe plate 18 is in a state where the probes 18anot in contact with the respective corresponding connection fields (electrodes), and to allow elastic deformation so that contact between the probes 18a and the respective corresponding connection fields 28a If not prevented, heat from the heat source will also be lost. 24 , which are located on the top of the clamping device 21 is intended to be added to the semiconductor wafer 28 and transferred to the probe plate. Therefore, the time until the probe plate 18 A thermal equilibrium can be reached, and the time until the start of the measurement can be further reduced.
[0088] The electrical connection device can also be used 1 according to the first embodiment, since there is no heat source in the probe plate 18 The time until the start of the measurement must be significantly reduced without complicating the device setup and control procedure.
[0089] Even though the first embodiment has been described as an example of the electrical connection device 1 , which is the support element 16f with low thermal conductivity and the elastic thermal conductivity element 18h The object is not limited to containing it, and a structure that either includes the supporting element 16f with low thermal conductivity or the elastic thermal conductivity element 18h It is also possible if it contains [something].
[0090] Even if the first embodiment serves as an example of the electrical connection device 1 It has been described that the pogopin block 16a contains, which is arranged to form the conductor base plate 14 to contact, the subject is not limited to this, and the pogopin block 16a can be arranged in such a way that it covers the probe plate 18 contacted. In other words, the pogo pin block must be contacted. 16aIt must be arranged in such a way that it either forms the conductor base plate 14 or the probe plate 18 contacted.
[0091] Even if the first embodiment serves as an example of the electrical connection device 1 It has been described that the probe plate 18 The item, which mainly consists of ceramic, is furthermore not limited to this, and the probe plate 18 can be made from a material whose coefficient of thermal expansion is close to that of silicon, which is a major material of semiconductor wafers. 28 is. The thermal expansion of the probe plate can occur in this process. 18 the semiconductor wafer 28 consequences.
[0092] Even though the first embodiment has a structure that incorporates the elastic heat conduction element 18h contains, which is intended to enable it to be applied to the areas of the semiconductor wafer 28is located, with the exception of the areas connected to the connecting fields. 28 are provided for and that the lower surface of the probe plate 18 is in a state where the probes 18a not at the respective corresponding connection fields 28a to fit and that it allows elastic deformation so that there is contact between the probes 18a and the respective corresponding connection fields 28a Furthermore, the subject matter is not limited to what is prevented.
[0093] For example, the elastic heat conduction elements can 18h It is intended to allow them to be placed on a working surface of the clamping device surface. 21 to lie and that the lower surface of the probe plate 18 is in a state where the probes 18a not at the respective corresponding connection fields 28athat they allow elastic deformation so that there is no contact between the probes 18a and the respective corresponding connection fields 28a is not prevented.
[0094] Furthermore, in the first embodiment a thermometer can be provided that measures the temperature of the probe plate. 18 measures, and the step mechanism 22 can be constructed in such a way that it forms the top of the clamping device 21 raises and lowers according to the temperature measured with the thermometer.
[0095] Specifically, the first embodiment can include a thermometer that measures the temperature of the probe plate. 18 measures and can include a control unit that controls the probe plate 18 in one direction of the clamping device top 21 moved so that the probes 18a and the respective corresponding connection fields 28ain the event that temporal changes in the temperature measured with the thermometer are within a predetermined temperature range, are adjacent to each other when the probes 18a in a non-adherent state on the respective corresponding connection fields 28a are and when the elastic heat conduction elements 18h in a pressed position on the working surface of the clamping device surface 21 or the semiconductor wafer 28 on the work surface and the probe plate 18 Here, the predetermined temperature range is set beforehand, for example, to 85°C to 95°C, as a temperature range in which the temperature of the probe plate 18 is stable.
[0096] Even though the first embodiment has been described as an example of the electrical connection device 1 , which are the elastic heat conduction elements 18hcontains materials that exhibit elasticity, such as low-hardness silicone rubber, formed in cleft-like shapes by a heat-conducting material, and located on the lower surface of the multilayer conductor layer. 18c are arranged to cover the designated area of the probes 18a the probe plate 18 to surround, the object is not limited to that, and the elastic heat conduction element 18h can be designed in a ring-shaped form to accommodate the arranged area of the probes 18a the probe plate 18 to surround and can be located on the lower surface of the multilayer conductor layer 18c be arranged. <Zweite Ausführungsform>
[0097] A second embodiment is described as an example of the electrical connection device. 1 , which is a probe plate 18 contains components whose heat capacity is further reduced.
[0098] Fig. Figure 8 schematically illustrates a structure of the electrical connection device 1 according to the second embodiment. It should be noted that among the components that are in the electrical connection device 1 according to the second embodiment, the components are included with the same reference numerals as those in the electrical connection device. 1 according to the first embodiment, they are identical, and therefore a description of these duplicate components is omitted.
[0099] As in Fig. Figure 8 illustrates the probe plate 18 a support element 18m , which is made, for example, from a ceramic plate, the multilayer conductor layer 18c , which are located on a lower surface of the support element 18m is formed, and a fixing element 18g , which is located on an upper surface of the support element 18m is trained.
[0100] The support element 18m is designed to have a smaller plate thickness than that of the supporting element 18d to demonstrate that in the electrical connection device 1 as included in the first embodiment. Since the heat capacity of the probe plate 18 may be short, and the time until the probe plate 18 By shortening the time it takes for a thermal equilibrium to be reached, the time until a measurement can be started can be significantly reduced.
[0101] Furthermore, to maintain durability, the fixing element 18g on the upper surface of the support element 18m provided. This fixing element 18g is constructed using ceramic or similar materials and has a thermal conductivity of 4 ppm / °C or less, for example, by having a beam structure. This allows for a heat capacity of the probe plate. 18reduced without affecting the probe plate 18 the pogopin block 16a and pogo pins 16c must contact, and the probe plate 18 can retain sufficient resilience to prevent the probe card from 19 is deformed by heat. <Dritte Ausführungsform>
[0102] The first embodiment has been described as an example of the electrical connection device 1 , located on the lower surface of the multilayer conductor layer 18c the probe plate 18 the elastic heat conduction elements 18h contains elements that exhibit elasticity and are formed in slit-like shapes by a heat-conducting material.
[0103] A third embodiment is described as an example of the electrical connection device. 1 , which are located on the working surface of the clamping device's upper surface 21elastic heat conduction elements 21a , which exhibit elasticity and are formed in slit-like shapes by a heat-conducting material, instead of elastic heat-conducting elements 18h contains.
[0104] Fig. Figure 9 schematically illustrates a structure of the electrical connection device 1 according to the third embodiment. It should be noted that among the components that are in the electrical connection device 1 according to the second embodiment, the components are included with the same reference numerals as those in the electrical connection device. 1 according to the first embodiment, they are identical, and therefore a description of these duplicate components is omitted.
[0105] As in Fig. Figure 9 illustrates the working surface of the clamping device's upper surface. 21 the multitude of elastic heat conduction elements 21aprovided which have an elasticity, such as low-hardness silicone rubber, and which are formed in slit-like shapes by a heat-conducting material.
[0106] The elastic heat conduction elements 21a are designed to allow clamping on a working surface of the clamping device top 21 to lie flat and to allow the lower surface of the probe plate to 18 is in a state where the probes 18a not on the respective corresponding connection fields 28a to be in contact with, and to be elastically deformable so that the contact between the probes 18a and the respective corresponding connection fields 28a is not prevented.
[0107] This transfers heat from the heat source 24 , which are located on the top of the clamping device 21 is intended to be placed on the semiconductor wafer 28 and the probe plate 18transferred. Accordingly, the time until the probe plate 18 Once a thermal equilibrium is reached, the time until a measurement can be started can be shortened further. <Vierte Ausführungsform>
[0108] The first embodiment has been described as an example of the electrical connection device 1 , in which the elastic heat conduction elements 18h so outside the connection fields 28a on the lower surface of the multilayer conductor layer 18c the probe plate 18 are arranged so that they do not connect the fields 28a contact.
[0109] A fourth embodiment is described as an example of the electrical connection device. 1 , in which the elastic heat conduction elements 18h outside and inside the connection fields 28a are arranged.
[0110] Fig. 10A and Fig. 10B are views of the probe plate 18 , which is in the electrical connection device 1 as described in the fourth embodiment, from the perspective of a lower side. Fig. 10A illustrates a first concern, while Fig. 10B illustrates a second concern. It should be noted that in the Fig. 10A and Fig. 10B a position of the semiconductor wafer 28 and positions of the connection fields 28a the multiple chips or DUT chips that are placed on the semiconductor wafer 28 They are formed and illustrated by dashed lines.
[0111] The number of probes 18a the probe plate 18 , which is in the electrical connection device 1 According to the fourth embodiment, half the number of probes is included. 18a the probe plate 18 , which is in the electrical connection device 1are included according to the first embodiment.
[0112] Thus, the number of probes 18a the probe plate 18 , which is in the electrical connection device 1 as per the fourth embodiment, half the number of probes are included. 18a the probe plate 18 , which is in the electrical connection device 1 are contained according to the first embodiment. After the probes 18a on the first half of the respective connecting fields 28a To perform an electrical test, the top of the clamping device is opened. 21 moved, and the probes 18a lie on the other half of the connecting fields 28a to perform an electrical test.
[0113] As in Fig. 10A illustrates the electrical connection device 1According to the fourth embodiment, as a first concern, more precisely an electrical test of the connection fields 28a , which in the first request for positions 28c the connection fields are placed, represented as hatched rectangles drawn by dashed lines, under all the connection fields 28a , each of which is connected to the probes 18a correspond, through.
[0114] The electrical connection device 1 According to the fourth embodiment, the upper surface of the clamping device then moves. 21 in an X direction.
[0115] As in Fig. 10B illustrates the electrical connection device 1 According to the fourth embodiment, as a second objective, this involves an electrical test of the connection fields. 28b , which in the second request for positions 28bthe connection fields are placed, represented as hatched rectangles drawn by dashed lines, under all the connection fields 28a , each of which is connected to the probes 18a correspond, through.
[0116] In this way, in the electrical connection device 1 according to the fourth embodiment, since the number of probes 18a Since it is halved, the wiring is made easier.
[0117] Furthermore, the number of probes 18a When halved, the elastic heat conduction elements can 18h not only outside the positions of the connection fields 28a be arranged, but also within the positions of the connection fields 28a , that is, in positions such as in Fig. 10A and Fig. 10B shown without probes 18a are planned.
[0118] This removes heat from the semiconductor wafer. 28to the probe plate 18 It is easier to transfer. Accordingly, the time until the probe plate 18 Once a thermal equilibrium is reached, the time until a measurement can be started can be further reduced. QUOTES INCLUDED IN THE DESCRIPTION
[0119] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature
[0120] JP 2013-142391
[0001] JP 2011-89891
[0009] JP 2010-151740
[0009]
Claims
[1] Electrical connection device comprising a clamping table which holds a component in the test on a working surface of the clamping table, the component having a plurality of electrodes, and which heats and cools the component in the test, and which connects the plurality of electrodes to a tester, comprising: a probe card comprising a probe plate having a first surface facing the tester and having a conductive track formed therein for electrical connection with the tester, and a plurality of probes provided on a second surface of the probe plate for connection with the conductive track and for enabling the plurality of electrodes of the component under test to be contacted on the clamping table and moved relative to the clamping table; and one or a plurality of elastic heat conduction elements arranged between the working surface of the clamping table or the component under test on the working surface and the probe plate, wherein the elastic heat conduction element enables it to be in contact with the working surface of the clamping table or the component in the test on the working surface and the probe plate in a state in which the plurality of probes does not contact the plurality of respective corresponding electrodes, and wherein it is elastically deformable in order not to prevent contact between the plurality of probes and the plurality of respective corresponding electrodes. [2] Electrical connection device according to claim 1, wherein in a free state in which no elastic compression is experienced between the working surface of the clamping table or the component in the test on the working surface and the probe plate, the elastic heat conduction element has a longer extension than the distance from the probe plate to the tip ends of the probes. [3] Electrical connection device according to claim 2, wherein the elastic heat conduction element is fixed at a first end of it to the second surface of the probe card and points at a second end of it towards the component in the test, passing over the tip ends of the probe plate. [4] Electrical connection device according to claim 1, wherein the elastic heat conduction element is made of heat-conducting silicone rubber. [5] Electrical connection device according to claim 4, wherein the elastic heat conduction elements are a plurality of column-like bodies and are arranged such that they surround a correspondingly arranged area of the probes from the probe plate. [6] Electrical connection device according to claim 4, wherein the elastic heat conduction element is an annular element arranged such that it surrounds the correspondingly arranged area of the probes from the probe plate.