Electrical connection device

Abstract

Electrical connection device (1) comprising a clamping table which holds a component (28) in the test on a working surface of the clamping table, the component having a plurality of electrodes (28a), and which heats and cools the component in the test, and which connects the plurality of electrodes to a tester (11), comprising: a circuit board arranged on an upper side of the clamping table and having a first conductor formed within the circuit board which is connected to the tester (11);a probe card (19) comprising a probe plate (18) arranged such that it is spaced from the circuit board and has a first surface of the probe plate (18) facing the circuit board, and comprising a second conductor corresponding to the first conductor track, and a plurality of probes (18a) provided on a second surface of the probe plate, which are connected to the second conductor track and which enable the plurality of electrodes (28a) of the component to be contacted accordingly during testing on the clamping table (21); and an electrical connector (16) electrically connecting the first conductor track to the second conductor track, wherein the electrical connector (16) comprises a heat sink provided between the circuit board and the probe plate (18) to reduce heat conduction between the circuit board and the probe plate (18).

Description

RELATED APPLICATION

[0001] This application claims the benefit of and claims priority from Japanese Patent Application JP 2013-142390 filed on Jul 8, 2013. TECHNICAL AREA

[0002] The subject relates to an electrical connection device for use in an electrical test of a flat board-like device under test such as an integrated circuit, and concretely relates to an electrical connection device that enables electrical test to be started within a short period of time. BACKGROUND

[0003] In general, integrated circuits formed on a semiconductor wafer are subjected to an electrical inspection to determine whether or not they have predetermined electrical characteristics (that is, determining whether the integrated circuits are good or not). In such a test, all of the integrated circuits on a wafer are tested at a time or in multiple batches using an electrical connector that electrically connects the electrodes of the integrated circuits to the electrical circuits of a tester.

[0004] The electrical connection device for use in such a test includes a lead base plate having a plurality of connection portions to be electrically connected to the electrical circuits of the test device, a probe plate arranged on a lower side of the lead base plate, and a plurality of internal wires which are electrically connected to the connecting portions, and a plurality of contacts (that is, probes) which are attached to a lower surface of the probe plate and electrically connected to the internal wires, as described in Patent Document 1, for example.

[0005] In recent years, with the use of such an electrical connecting device, the integrated circuits are tested under a high temperature or a low temperature. In this case, the integrated circuits are heated or cooled to a predetermined temperature by a heat source provided at a stage where the integrated circuits are placed. For example, in the event that the integrated circuits are heated by the heat source, the probe plate that has the contacts placed thereon will also be heated by receiving radiant heat from the stage and the integrated circuits. As a result, the integrated circuits and the probe plate are thermally expanded.

[0006] However, since an amount of thermal expansion of the semiconductor wafer and an amount of thermal expansion of the probe plate differ, the relative positional relationship between the electrodes of the semiconductor integrated circuits and the tip ends of the contacts changes, and there are inevitably contacts whose tip ends are not pressed onto the electrodes of the semiconductor integrated circuits.

[0007] The semiconductor wafer is heated by the heat source provided in the stage to cause the temperature of the semiconductor wafer to be constant at a certain temperature even after several hours, and also the probe plate is heated by radiant heat, to cause the temperature of the semiconductor wafer to be constant at a certain temperature even after several hours. Since measurement can be started when temperatures are constant and relative positions between the electrodes of the integrated circuits and the tip ends of the contacts are stable, it takes a considerable time to start a measurement.

[0008] Patent Document 2 proposes an electrical connection device in which a probe plate is provided with a heat generating body, the temperature of the probe plate is measured, and electric power for heating supplied to the heat generating body is controlled based on the measured values. Reference ListPatent Documents

[0009] [Patent Document 1]: Japanese National Patent Application Publication No. 2011-89891 [Patent Document 2]: Japanese National Patent Application Publication No. 2010-151740 SUMMARY

[0010] However, the electrical connection device described in Patent Document 2 is provided in the probe plate having the heat generating body, causing a problem of complication of a device structure and a control method.

[0011] An electrical connection device is provided, which shortens the time until the measurement is started with a simple device structure.

[0012] In a first aspect, an electrical connection apparatus according to an embodiment is an electrical connection apparatus that includes a worktable that holds a device under test having a plurality of electrodes on a work surface of the worktable and that heats and cools the device under test and that connects the plurality of electrodes to a tester, and includes a circuit board that is disposed on an upper side of the worktable and has a first conductive pattern formed inside the circuit board to be connected to the tester, a probe card that includes a probe board arranged so as to be spaced from the board and disposed with a first surface of the probe plate facing the board, and having a second conductive line formed within the board corresponding to the first conductive line, and a plurality of probes formed on a second surface the probe plate are provided, which are to be connected to the second conductor track and which make it possible to contact the plurality of electrodes of the component under test on the worktable accordingly, and an electrical connector which electrically connects the first conductor track to the second conductor track, wherein the electrical connector has a heat conduction reducing means provided between the circuit board and the probe plate for reducing heat conduction between the circuit board and the probe plate.

[0013] In addition, in a second aspect, the electrical connector in the electrical connection device according to the embodiment includes a pin member that electrically connects the first conductive pattern to the second conductive pattern, and a support body that holds the pin member, wherein the heat conduction reducing means includes a heat insulating member that has lower thermal conductivity than that of the support body, and the heat insulating member is arranged with its both ends to abut against the circuit board and the probe plate, and the support body is arranged to be spaced apart from at least one of the circuit board and the probe plate.

[0014] Also, in a third aspect, in the electrical connection device according to the embodiment, the electrical connector is a pogo pin connector in which the pin member is a pogo pin and the supporting body is a pogo pin block, and the pogo pin block is supported by the heat insulating member.

[0015] Also, in a fourth aspect, of the electrical connection device according to the embodiment, the heat insulating member is formed in an annular shape and arranged so as to surround the pogo pin block.

[0016] In addition, in a fifth aspect, the electrical connector of the electrical connection device according to the embodiment includes a pin member that electrically connects the first conductive pattern to the second conductive pattern, and a supporting body that holds the pin member, and wherein the supporting body has surfaces that correspond to the circuit board and the facing the probe plate, at least one of the surfaces being provided with a plurality of projections each gradually reducing a cross-sectional area of ​​the support body toward the circuit board and the probe plate, and the plurality of projections abut against the circuit board or the probe plate.

[0017] With the electrical connection device according to the embodiment, it is possible to shorten the time until a measurement is started with a simple device structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] figure1 illustrates an entire structure including an electrical connection device according to a first embodiment.

[0019] figure 2 schematically illustrates a structure of the electrical connection device according to the first embodiment.

[0020] figure 3 is a view of a probe plate included in the electrical connection device according to the first embodiment seen from a lower side.

[0021] figure 4A bis figure 4C are side views describing abutment between probes included in the electrical connection device according to the first embodiment and respective connection pads. figure 4A illustrates a state of a heat conducting elastic member when a jig top is in a starting state. figure 4B illustrates a state in which a step mechanism raises the jig top and in which a tip end of a lower portion of the elastic heat conducting member abuts against a semiconductor wafer, and figure 4C illustrates a state in which the step mechanism further raises the jig top and in which the probes abut the respective corresponding connection pads.

[0022] figure 5 is a plan view illustrating an electrical connector included in the electrical connection device according to the first embodiment.

[0023] figure 6 illustrates changes from a position of the probe provided at a certain point away from a center of the disk-shaped probe plate included in the electrical connection device according to the first embodiment and a position of the connection pad of a chip or DUT chip attached a certain point away from a center of the disc-shaped semiconductor wafer.

[0024] figure 7 illustrates temperature changes up to a start of measurement in the case that heating is started by a heat source in the jig top.

[0025] figure 8 schematically illustrates a structure of the electrical connection device according to a second embodiment. DETAILED DESCRIPTION

[0026] Hereinafter, an electrical connection device according to the embodiments will be described in detail with reference to the figures. <First Embodiment>

[0027] figure 1 illustrates an entire structure including an electrical connection device according to a first embodiment, and figure 2 schematically illustrates a structure of the electrical connection device according to the first embodiment.

[0028] As in figure 1 and figure 2 includes an electrical connection device 1 according to the first embodiment, a flat plate-like support member (a stiffener) 12 , whose bottom surface is a flat mounting reference surface, a circular, flat, plate-like wiring base plate 14 , which is on the plane of attachment of the support element 12 held is a circular, flat, plate-like probe card 19 holding a semiconductor wafer 28 , how a component under test contacts, and an electrical connector 16 , which the line base plate 14 electrically with the probe card 19 connects and from a bracket 20 is held.

[0029] The bracket 20 is from a probe base 23 supported and has a crank-like cross-sectional structure to the electrical connection device 1 record. The bracket 20 also has support pins 20a on which are adapted to the support element 12 and the line base plate 14 the electrical connection device 1 to support.

[0030] The support element 12 is with through holes 12b , which is the support element 12 vertically penetrate provided while the line base plate 14 with through holes 14bis provided, which the line base plate 14 penetrate vertically. The support pins 20a are in the through holes 12b and into the through holes 14b attached to cause the support member 12 and the line base plate 14 from the bracket 20 is supported.

[0031] The electrical connection device 1 is used to connect appropriate connection pads (electrodes) such as connection terminals of multiple chips or DUT chips (integrated circuits) on the semiconductor wafer 28 are trained with electrical circuits by an examiner 11 for an electrical test, for example to connect the chips or DUT chips.

[0032] Thus, the complete structure includes a fixture top 21 , which on an upper surface of the jig top the semiconductor wafer 28 which is provided with corresponding connection pads (electrodes), such as the connection terminals of the chips or DUT chips, around the semiconductor wafer 28 detachable to suck by vacuum, and a step mechanism 22 , which the jig top 21 moved vertically. Through the vertical movement of the step mechanism 22 , the chips or DUT chips are on the semiconductor wafer 28 with the probe card 19 the electrical connection device 1 brought into contact to conduct an electrical test by the examiner 11 to perform.

[0033] Also, the chuck top contains a heat source 24 showing the semiconductor wafer mounted on it 28 heats or cools. The semiconductor wafer 28 is caused by this heat source 24 heated or cooled, and the probe card 19 is caused by the radiant heat of the heat source 24 heated or cooled.

[0034] The line base plate 14 is made of, for example, a completely circular plate-like polyimide resin plate, and is on an upper surface (first surface) of the wiring base plate with bonding wires 12a provided that with the examiner 11 are connected.

[0035] Further, a bottom surface of the wiring base plate 14 with pad portions (not shown) provided to connect with the bonding wires 12a via conductor tracks 14 , which are formed in the wiring base plate to be electrically connected.

[0036] The support element 12 includes a plate-like frame member made of, for example, stainless steel plate, arranged with the mounting plane of the support member lying on the top surface of the duct base plate 14 applied.

[0037] The probe card 19 includes a probe plate 18 and probes 18a .

[0038] The probe card 18 includes a support element 18d , which is made of a ceramic plate, for example, and contains a multi-layered conductor layer 18c , which is on a lower surface of the support member 18d or the ceramic plate is formed. The multilayer conductor layer 18c comprises a multi-layer board made of, for example, a polyimide resin material, which has electrically insulating properties, and has wirings 18e formed between respective layers of the multilayer board.

[0039] A bottom surface (second surface) of the multilayer conductor sheet 18c is with probe pads 18b provided, corresponding with the conductor tracks 18e of the multilayer conductor layers 18c are electrically connected.

[0040] Any probe 18a is at an upper end of the probe with the corresponding probe pad 18b the probe plate 18 connected, and is therefore on the probe plate 18 fixed so that they are from the bottom surface of the multilayer conductor sheet 18c protruding downwards, and with the conductor track 18e the multilayer conductor layer 18cconnected is.

[0041] The bottom surface (second surface) of the multilayer conductor sheet 18c is further with elastic heat conduction elements 18h are provided which have elasticity like low-hardness silicone rubber, which are formed in column-like shapes of a thermally conductive material, and which are arranged around, for example, an arranged portion of the probes 18a the probe plate 18 to surround.

[0042] figure 3 shows a view of the probe plate 18 included in the electrical connection device 1 according to the first embodiment, viewed from a lower side. It should be noted that in figure 3 a position of the semiconductor wafer 28 and positions of the connection panels 28a the multiple chips or DUT chips that are on the semiconductor wafer 28 are formed are illustrated by dashed lines.

[0043] As in figure 3, the bottom surface of the probe plate is provided with twelve elastic heat-conducting elements 18h provided, which are arranged in column-like form, and wherein these elastic heat-conducting elements 18h are arranged so that they connect the panels 28a the multiple chips or DUT chips that are on the semiconductor wafer 28 are trained, do not contact.

[0044] The elastic heat conduction elements 18h are provided to enable areas of the semiconductor wafer 28 snugly, except for the areas marked with the connector panels 28a are provided, and that the lower surface of the probe plate 18 is in a state where the probes 18a not at the corresponding connection fields 28a abut, and are elastically deformable to abut between the probes 18a and the corresponding connection fields 28a not to prevent.

[0045] figure 4A bis figure 4C are side views showing the abutment between the probes 18a included in the electrical connection device 1 are included according to the first embodiment, and the respective corresponding connection panels 28a describe. figure 4A illustrates a state of the elastic heat conducting member 18h in the event that the jig top 21 is in a starting state, figure 4B illustrates a state in which the step mechanism 22 the jig top 21 increased, and in which a tip end of a lower portion of the elastic heat conducting member 18h on the semiconductor wafer 28 applied, and figure 4C illustrates a state in which the step mechanism 22 the jig top 21 further increased, and where the probes 18a on the corresponding connection fields 28a issue.

[0046] As in figure 4A illustrates, the elastic heat conduction element 18h in a state where the jig top 21 is in a starting state, that is, in a free state in which the elastic heat-conducting element 18h no elastic compression between the semiconductor wafer 28 on the top of the jig 21 and the probe plate 18 experiences a total length of 1200 (mm), which is a longer size than a distance (1000 mm) from the probe plate 18 to the tip ends of the probes 18a is.

[0047] Subsequently, as in figure 4B, the tip end lies from the lower portion of the elastic heat conduction member 18h on the semiconductor wafer 28 on when the step mechanism 22 the jig top 21 elevated. When the tip end of the lower portion of the elastic heat conduction element 18h on the semiconductor wafer 28 in this way, heat from the heat source 24 that are in the jig top 21 is provided to the semiconductor wafer 28 and the probe plate 18transfer. In doing so, the time until the probe plate 18 A thermal equilibrium is reached in the event that the temperature of the probe plate 18 increases only by radiant heat can be further and further reduced, and the time until the start of the measurement can be shortened.

[0048] Subsequently, when the probe plate 18 reaches thermal equilibrium, the step mechanism increases 22 the jig top 21 further and causes the probes 18a on the corresponding connection fields 28a issue. At this time, the elastic heat conduction element 18h elastically deformed to fit between the probes 18a and the corresponding connection fields 28a not to prevent. The corresponding connection fields 28a of the semiconductor wafer 28 and the examiner 11 electrically connected and an electrical test is performed.

[0049] coming back on figure 2, is an upper surface (first surface) of the support member 18d the probe plate 18 having land portions (not illustrated) provided at positions corresponding to those on the lower surface (second surface) of the wiring base plate, respectively 14 provided pad areas correspond. The land areas that are on the probe board 18 are provided are accordingly on the conductor tracks 18e the multilayer conductor layer 18c with the respective probes 18a electrically connected.

[0050] Between the probe plate 18 and the line base plate 14 is the electrical connector 16 arranged for electrical connection.

[0051] In the electrical connector 16 , as enlarged in figure 2 illustrates is a pogo pin block 16a arranged around the line base plate 14 to contact, the pogopin block 16a is made of an electrically insulating plate-like member, and a plurality of through holes formed therein 161 formed in a plate thickness direction.

[0052] Also is in each through hole 161 of the pogo pin block 16a a pair of pogo pins 16b and 16c arranged, which is accommodated so as to be slidable in an axial direction of the through hole 161 to be, and in a state of falling out from the through hole 161 should be prevented. Between each pair of pogopins 16b and 16c , is a compression coil spring 16d arranged which has a restoring force on both of the pogopins 16b and 16c in a direction away from each other and acts as a conductive path between the pogopins.

[0053] The Pogopins 16b are provided at positions respectively corresponding to the land portions formed on the lower surface (second surface) of the wiring base plate 14 are provided while the pogopins 16c are provided at positions respectively corresponding to the land portions formed on the top surface (first surface) of the probe board 18 are provided.

[0054] In an assembled state of the electrical connector 16 are due to the spring forces of the compression coil springs 16d the pogopins 16b that are on the line base plate 14 are provided are brought into pressure contact with the land portions being on the lower surface (second surface) of the wiring base plate 14 are provided, and the pogopins 16c , which is on one side of the probe plate 18 are provided in pressure contact with the land portions formed on the top surface (first surface) of the probe board 18 are provided.

[0055] Here are the probes 18a with the corresponding pad areas of the lead base plate 14 electrically connected. Consequently, when the tip ends of the probes 18a on the connection fields 28a the one on the semiconductor wafer 28formed chips or DUT chips are the connection pads 28a via the respective corresponding probes 18a , the electrical connector 16 and the line base plate 14 connected to the examiner. As a result, electrical testing of the integrated circuits on the semiconductor wafer 28 be carried out by the examiner.

[0056] As in figure 1 also illustrates the electrical connector 16 on an outer peripheral portion of the electrical connector with a support member 16f is provided with low heat conduction, which is arranged so that its both ends on the conduction base plate 14 and the probe plate 18 fit, and inside with support elements 16g with low heat conduction, each arranged so that both ends thereof are on the conduction base plate 14 and the probe plate 18 issue.

[0057] These support elements 16f and 16g with low thermal conductivity are made of a heat insulating member that has a lower thermal conductivity than that of the pogo pin block 16a , which is formed of, for example, plastic, wood and an epoxy resin.

[0058] figure 5 is a plan view showing the electrical connector 16 illustrated that in the electrical connecting device 1 is included according to the first embodiment.

[0059] As in figure 5 illustrates the electrical connector 16 the one with the through holes 161 provided pogo pin block 16a , the annular support element 16f with low heat conduction on the outer peripheral area of ​​the pogo pin block 16a , and the supporting elements 16g with low heat conduction, which are arranged in a column-like form so as to block the pogo pin 16a penetrate

[0060] In this way are the support elements 16f and 16g with low heat conduction on the outside surrounding area of ​​and inside the pogo pin block 16a arranged so that the two ends are on the lower surface of the line base plate 14 and the top surface of the probe plate 18 issue. In this case, heat conduction between the line base plate 14 and the probe plate 18 be lowered, and heat conduction targets from the heat source 24 that are in the jig top 21 are provided are mainly the semiconductor wafer 28 and the probe plate 18 . Because the heat capacity of the heat conduction target (the probe plate 18 ) by radiant heat and heat conduction through the elastic heat conduction elements 18h can be small, thus the time until the probe plate 18 achieves heat balance can be reduced, and the time until the start of measurement can be reduced. heat balance

[0061] Here the heat balance of the probe plate 18 described in detail.

[0062] As described above, the jig top includes 21 the heat source 24 , showing the semiconductor wafer mounted on the chuck top 28 heats or cools. The semiconductor wafer 28 is caused by this heat source 24 heated or cooled, the probe plate 18 by radiant heat from the heat source 24 and heat conduction through the elastic heat conduction elements 18h is heated or cooled, and the semiconductor wafer 28 and the probe plate 18 achieve thermal equilibrium.

[0063] For example, in a case of heating by the heat source 24 , when the temperature of the heat source 24 in the jig top 21 is 125(°C), is the temperature of a bottom surface of the semiconductor wafer 28 about 122(°C), while the bottom surface of the probe plate 18 by radiant heat is about 90(°C), and the semiconductor wafer 28 and the probe plate 18 are in thermal equilibrium at these temperatures.

[0064] If the semiconductor wafer 28 and the probe plate 18 are heated in this way, the semiconductor wafer stretches 28 and the probe plate 18 thermally off. Along with the thermal expansion, the positions of the connection fields move 28a of the chips or DUT chips that are on the semiconductor wafer 28 are formed, and positions of the probes 18a attached to the lower surface of the probe plate 18 are attached. Thus, the positions of the probes 18a be determined so that the tip ends of the probes 18a on the connection fields 28a of the chips or DUT chips that are on the semiconductor wafer 28 are formed, may be present when the semiconductor wafer 28 and the probe plate 18 achieve thermal equilibrium.

[0065] figure 6 illustrates changes in position of the probe 18a , located at a certain point away from a center of the disk-shaped probe plate 18 is provided in the electrical connection device 1 according to the first embodiment and from a position of the connection panels 28a of the chip or DUT chip located at a certain point away from a center of the disc-shaped semiconductor wafer 28 are arranged. A straight 101 , in the figure 6 represents changes in position of the connection field 28a of the chip or DUT chips that are on the semiconductor wafer 28 are formed in accordance with temperature changes while a straight line 102 Changes in position of the probe 18a represented in accordance with temperature changes. Here, each of the position changes (displacement amount) means a travel distance in an outer circumference direction from a position at a normal temperature (assumed to be 23° C.) set as a reference.

[0066] A slope of the straight line 101 becomes with a coefficient of thermal expansion α1 of the semiconductor wafer 28 determined while a slope of the straight line 102 with a coefficient of thermal expansion α2 of the probe plate 18 is determined. Thus, the position of the probe 18a be determined in advance so that the positions of the probe 18a and the connection field 28a , which can be equal from the corresponding coefficients of thermal expansion α1 and α2 at corresponding temperatures T1 and T2 at which thermal equilibrium is achieved.

[0067] In particular, the position of the probe 18a so determined that the position of the connection box 28a , when the temperature T1 of the lower surface of the semiconductor wafer 28 when thermal equilibrium is reached is 122(°C), and the position of the probe 18a , when the temperature T2 of the lower surface of the probe plate 18a when heat equilibrium is reached is 90(°C).

[0068] For example, if a displacement amount, toward the outer circumference, of the connection field 28a , located at a position 150 (mm) away from the center of the disk shape of the semiconductor wafer 28 toward the outer circumference at the normal temperature (taken as 23°C) is ΔL1 (mm), ΔL1 (mm) is expressed as follows (Equation 1): ΔL1 = 150 α1 ΔT1 (equation 1)

[0069] In this equation, α1 is a thermal expansion coefficient of the semiconductor wafer 28 , and ΔT1 is a difference between the normal temperature and a high-temperature side temperature of the semiconductor wafer 28 at the time of heat equilibrium.

[0070] Even if a displacement size, toward the outer circumference, the probe 18a , located at a position 150 (mm) away from the center of the disk shape of the probe plate 18 toward the outer circumference at the normal temperature (taken as 23°C) is ΔL2 (mm), ΔL2 (mm) is expressed as follows (Equation 2): ΔL2 = 150 α2 ΔT2 (equation 2)

[0071] In this equation, α2 is a coefficient of thermal expansion of the probe plate 18, and ΔT2 is a difference between the normal temperature and a high-temperature side temperature of the probe plate 18 at the time of heat equilibrium.

[0072] Here you need to change the position of the connection box 28a and the position of the probe 18a correspond to the time of heat balance, the position of the probe 18a be determined in advance so that the relationship of the following Equation 3 can hold: α1 ΔT1 = α2 ΔT2 (equation 3)

[0073] Meanwhile, only the calculation needs to be performed, where the coefficient of thermal expansion α1 in the case that the semiconductor wafer 28 is made of silicone is set to 3.5 (ppm / °C), and the coefficient of thermal expansion α2 in the case that the probe plate 18 mainly composed of ceramics is set at 5.5 (ppm / °C).

[0074] Also in a case of cooling the semiconductor wafer 28 and the probe plate 18 , as well as in a case of heating, the following (equation 4) in a similar way: α1 ΔT'1 = α2 ΔT'2 (equation 4)

[0075] In this equation, ΔT'1 is a difference between the normal temperature and a low-temperature side temperature of the semiconductor wafer 28 at the time of heat equilibrium. ΔT'2 is a difference between the normal temperature and a low temperature side temperature of the probe plate 18 at the time of heat equilibrium. For example, the position of the probe 18a be determined so that the position of the connection box 28a , when the temperature T'1 of the lower surface of the semiconductor wafer 28 when thermal equilibrium is reached is -37(°C) (ΔT'1 = 60°C) and the position of the probe 18a , when the temperature T'2 of the lower surface of the probe plate 18 when thermal equilibrium is reached is -15(°C) (ΔT'2 = 38°C) can correspond to each other.

[0076] In this way, the positions of the probes 18a determined, and the probes 18a are placed at the specified positions around the probe plate 18 to manufacture. Accordingly, the electrical connection device 1 according to the first embodiment, an electrical inspection of the semiconductor wafer 28 at the temperature expressed in (Equation 3) or (Equation 4). <Results of First Embodiment>

[0077] Next are results of the electrical connection device 1 described according to the first embodiment.

[0078] figure 7 illustrates temperature changes until the start of measurement in a case where heating by the heat source 24 in the jig top 21 is started at a time t0. In figure 7, is a temperature 201 a temperature of the heat source 24 in the jig top 21 the electrical connection device 1 according to the first embodiment, and is a temperature 202 a temperature of the bottom surface of the semiconductor wafer 28 the electrical connection device 1 according to the first embodiment. Comparative is a temperature 203 a temperature of a lower surface of a probe plate according to a conventional technique, and a temperature 204 is a temperature of an upper surface of a wiring base plate according to the conventional art. A temperature 205 is a temperature of the bottom surface of the probe plate 18 the electrical connection device 1 according to the first embodiment.

[0079] In conventional technology when heating by a heat source 24 in the jig surface 21 is started at time t0, the corresponding temperatures rise 203 and 204 moderately up to a point in time t2. At this time, the temperature increase ratio of the temperatures increases 203 and 204 off when time t2 is reached.

[0080] Then, at time t2, the step mechanism moves 22upwards, and thus the chips or DUT chips contact on the semiconductor wafer 28 and the probe plate of the electrical connector 1 what heat conduction from the semiconductor wafer 28 to the probe plate. Thus, finally, at a time t3 when about 120 (minutes) have elapsed from the time t0, an electrical test of the semiconductor wafer 28 be performed.

[0081] In this way, since it takes 120 (minutes) from the start of heating for the probe plate to reach thermal equilibrium, it takes a considerable time for the measurement to start with the conventional technique.

[0082] On the other hand, when heating by the heat source 24 in the jig surface 21 is started, reaches the temperature 205 the bottom surface of the probe plate 18 a heat-equilibrium state at a time t1 when about 10 (minutes) have elapsed from the time t0, and thus an electrical inspection of the semiconductor wafer 28 be performed.

[0083] Because the electrical connection device 1 according to the first embodiment with the support element 16f is provided with low heat conduction, which is arranged so that both ends thereof on the duct base plate 14 and the probe plate 18 abut, heat conduction from the probe plate can be in this way 18 to the line base plate 14 be reduced. Because the heat capacity of the probe plate 18 can be low, and the time until the probe plate 18 a heat balance reached about 10 (minutes) can be short, accordingly, the time until the start of the measurement can be shortened.

[0084] Because the electrical connection device 1 according to the first embodiment with elastic heat conduction elements 18h is provided, which are provided to enable it to be placed on a work surface of the fixture top 21 to abut and allow the probe plate 18 is in a state where the probes 18a not abut on the respective corresponding connection pads (electrodes), and to allow elastic deformation to allow the abutment between the probes 18a and the corresponding connection fields 28a is not prevented, heat is also the heat source 24 that are in the jig top 21 is provided to the semiconductor wafer 28 and transferred to the probe plate. As a result, the time until the probe plate 18 a heat balance is achieved can be further shortened, and the time until the start of measurement can be further shortened.

[0085] Also can in the electrical connection device 1 according to the first embodiment because no heat source in the probe plate 18 must be provided, the time until the start of the measurement can be shortened considerably without complicating an apparatus structure and a control method.

[0086] Although the first embodiment has been described as an example of the electrical connection device 1 , which is the support element 16f with low heat conduction and the elastic heat conduction element 18h contains, the subject matter is not limited thereto, and a structure containing either the support member 16f with low heat conduction or the elastic heat conduction element 18h contains is also possible.

[0087] Although the first embodiment as an example of the electrical connection device 1 has been described that uses the pogo pin block 16a contains, which is arranged around the line base plate 14 further, the subject is not limited to this, and the pogo pin block 16a can be arranged so that he the probe plate 18 contacted. In other words, the pogopin block must 16a only be arranged so that he either the line base plate 14 or the probe plate 18 contacted.

[0088] Although the first embodiment as an example of the electrical connection device 1 has been described that the probe plate 18 further, the subject is not limited thereto, and the probe plate 18 may be made of a material whose coefficient of thermal expansion is close to that of silicon which is a main material of the semiconductor wafer 28 is. The thermal expansion of the probe plate 18 that of the semiconductor wafer 28 follow.

[0089] Although the first embodiment has a structure including the elastic heat conducting member 18h contains, which is intended to allow it to be on the areas of the semiconductor wafer 28 attached, with the exception of the areas connected to the connection panels 28 are provided and that the lower surface of the probe plate 18 is in a state where the probes 18a not at the corresponding connection fields 28a fit and that it allows elastic deformation to fit between the probes 18a and the corresponding connection fields 28a is prevented, the subject matter is not limited thereto.

[0090] For example, the elastic heat conduction elements 18h be provided to allow them to be mounted on a work surface of the fixture surface 21 and that the bottom surface of the probe plate 18 is in a state where the probes 18a not at the corresponding connection fields 28a abut and that they allow elastic deformation, thus a fit between the probes 18a and the corresponding connection fields 28a is not prevented.

[0091] Furthermore, in the first embodiment, a thermometer can be provided which measures a temperature of the probe plate 18 measures, and the step mechanism 22 can be constructed so that it is the jig top 21 rises and falls according to the temperature measured with the thermometer.

[0092] Concretely, the first embodiment may include a thermometer that measures a temperature of the probe plate 18 measures and may contain a control unit that controls the probe plate 18 in a direction of the jig top 21 moves so the probes 18a and the corresponding connection fields 28a in the event that temporal changes in the temperature measured with the thermometer are in a predetermined temperature range, abut each other when the probes 18a in a non-attached state on the respective corresponding connection pads 28a are and if the elastic heat conduction elements 18h in an abutting condition on the work surface of the fixture surface 21 or the semiconductor wafer 28 on the work surface and the probe plate 18 are. Here, the predetermined temperature range is previously set to, for example, 85(°C) to 95(°C) as a temperature range in which the temperature of the probe plate 18 is stable.

[0093] Although the first embodiment has been described as an example of the electrical connection device 1 , which are the elastic heat conduction elements 18h which have elasticity like low-hardness silicone rubber, which are formed in column-like shapes by a heat conduction material, and those on the lower surface of the multilayer conductor sheet 18c are arranged around the arranged area of ​​the probes 18a the probe plate 18 to surround, the subject is not limited thereto, and the elastic heat conduction member 18h may be formed in an annular shape around the arrayed area of ​​the probes 18a the probe plate 18 to surround and can on the lower surface of the multilayer conductor layer 18c be arranged. <Second embodiment>

[0094] Although the first embodiment has been described as an example of the electrical connection device 1 showing the flat plate-like pogopin block 16a contains, which is arranged around the line base plate 14 to contact, the subject is not limited to this.

[0095] A second embodiment will be described as an example of the electrical connection device 1 which includes a pogo pin block provided with a plurality of projections each successively extending a cross-sectional area of ​​the pogo pin block toward the lead base plate 14 reduced and those on the line base plate 14 issue.

[0096] figure 8 schematically illustrates a structure of the electrical connection device 1 according to the second embodiment. It should be noted that among components included in the electrical connection device 1 according to the second embodiment, the components are given the same reference numerals as those in the electrical connecting device 1 according to the first embodiment are the same, and thus a description of these duplicated components is omitted.

[0097] As in figure 8 illustrates the electrical connector 16 , which is in the electrical connection device 1 is included according to the second embodiment, an electrically insulating pogo pin block 16h , the multiple through holes formed therein 161 having.

[0098] The Pogopin Block 16h is with a variety of protrusions 16j are provided, each successively extending a cross-sectional area of ​​the pogo pin block toward the lead base plate 14 reduced and those at the tip ends of the line base plate 14 issue.

[0099] Because the tip ends of the plurality of projections 16j on the line base plate 14 applied, can in this way conduction of heat from the electrical connector 16 to the line base plate 14 can be reduced by as much as a degree of further reduction in the contacting surface compared to the pogo pin block 16a of the electrical connector 16 , which is in the electrical connection device 1 is included according to the first embodiment.

[0100] Because the time until the probe plate 18 when a heat balance is reached can be further shortened, accordingly, the time until the start of the measurement can be shortened considerably. QUOTES INCLUDED IN DESCRIPTION

[0101] This list of documents cited by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Patent Literature Cited

[0102] JP 2013-142390

[0001] JP 2011-89891

[0009] JP 2010-151740

[0009]

Claims

[1] Electrical connection device comprising a clamping table which holds a component in the test on a working surface of the clamping table, the component having a plurality of electrodes, and which heats and cools the component in the test, and which connects the plurality of electrodes to a tester, comprising: a circuit board which is arranged on an upper side of the clamping table and has a first conductor track formed within the circuit board which is to be connected to the tester; a probe card comprising a probe plate arranged such that it is spaced from the circuit board and with a first surface of the probe plate facing the circuit board, and comprising a second conductor track formed within the circuit board corresponding to the first conductor track, and a plurality of probes provided on a second surface of the probe plate, which are to be connected to the second conductor track and which make it possible to contact the plurality of electrodes of the component accordingly during testing on the clamping table; and an electrical connector that electrically connects the first conductor track to the second conductor track, wherein the electrical connector includes a heat conduction reducer provided between the circuit board and the probe plate to reduce heat conduction between the circuit board and the probe plate. [2] Electrical connection device according to claim 1, wherein the electrical connector comprises a pin element that electrically connects the first conductor track to the second conductor track, and a support body that holds the pin element, wherein the heat reduction medium comprises a thermal insulation element which has a lower thermal conductivity than that of the support body, and wherein the thermal insulation element is arranged with its two ends such that it rests against the circuit board and the probe plate, and wherein the support body is arranged such that it has a distance at least from either the circuit board or the probe plate. [3] Electrical connection device according to claim 2, wherein the electrical connector is a pogo pin connector in which the pin element is a pogo pin, and in which the support body is a pogo pin block, and the pogo pin block is supported by the thermal insulation element. [4] Electrical connection device according to claim 3, wherein the thermal insulation element is formed in a ring shape and is arranged to surround the pogopin block. [5] Electrical connection device according to claim 1, wherein the electrical connector comprises a pin element that electrically connects the first conductor track to the second conductor track, and a support body that holds the pin element, and wherein the support body has surfaces that face the circuit board and the probe plate, wherein at least one of the surfaces is provided with a plurality of projections, each of which stepwise reduces a cross-sectional area of ​​the support body in the direction of the circuit board and the probe plate, and the plurality of projections bear against the circuit board or the probe plate.

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