Organic optoelectronic component and method for producing an organic optoelectronic component

Abstract

Organic optoelectronic component (1), with a substrate having at least one first electrode (20), a dielectric insulator layer structure disposed on the substrate and in direct physical contact with the first electrode (20), a dielectric barrier layer (40) formed directly on the insulator layer structure and at least partially directly on the first electrode (20) and covering the lateral side surfaces of the insulator layer structure, an organic functional layer structure (22) formed over the first electrode (20) and on the dielectric barrier layer (40), and a second electrode (23) formed over the organic functional layer structure (22), wherein the substrate has a first contact section (16) which is electrically coupled to the second electrode (23) and which serves to electrically contact the second electrode (23), the dielectric insulator layer structure has a first insulation barrier (21) which electrically insulates the first electrode (20) from the first contact portion (16), and the dielectric barrier layer (40) is formed directly on the first insulation barrier (21) and covers lateral side surfaces of the first insulation barrier (21).

Description

[0001] The invention relates to an organic optoelectronic component and a method for producing an organic optoelectronic component.

[0002] The following publications relate to organic optoelectronic components: DE 11 2006 002 220 T5, DE 10 2011 076 733 A1, DE 10 2009 022 900 A1, WO 2015 / 079 519 A1, US 6 137 220 A.

[0003] Organic-based optoelectronic components, so-called organic optoelectronic components, are finding increasingly widespread use. For example, organic light-emitting diodes (OLEDs) are increasingly finding their way into general lighting, for example, as area light sources.

[0004] An organic optoelectronic component, for example an OLED, can have an anode and a cathode and an organic functional layer system between them. The organic functional layer system can have one or more emitter layers in which electromagnetic radiation is generated, a charge generating layer structure consisting of two or more charge generating layers (CGL) for charge pair generation, as well as one or more electron blocking layers, also referred to as hole transport layers (HTL), and one or more hole blocking layers, also referred to as electron transport layers (ETL), to direct the current flow. The individual layers can be laterally structured.

[0005] To achieve uniform and high efficiency across the entire surface of a large-area OLED, a uniform current distribution across the corresponding area of ​​the OLED is required. Thin, transparent electrodes are often limited in their electrical conductivity and therefore exhibit insufficient current conductivity for large-area applications. This can lead, for example, to laterally uneven luminance during operation of the OLED and, consequently, to a laterally uneven light image. To prevent this, thin metallic busbars are formed on the corresponding electrodes. These busbars are highly conductive supply structures and increase the current-carrying capacity compared to the use of a corresponding electrode without busbars.The busbars thus contribute to sufficient current distribution across the entire surface of the OLED, which can contribute to uniform luminance and thus a uniform light image.

[0006] The busbars can be formed, for example, by sputtering or using a PVD process and one or more subsequent lithography processes. The busbars can comprise or be formed from metal layer structures, such as alternating layers of Cr-Al-Cr or Mo-Al-Mo, or individual layers, for example, made of copper. These structures are coated with an organic insulator, in particular a resist, for example, with synthetic resin, to enable charge carrier injection from the corresponding electrode into the organic functional layers exclusively through the corresponding electrode.However, this has the disadvantage that decomposition products of the organic insulator due to the manufacturing process can penetrate into areas important for the radiation properties of the OLED, in particular into the organic functional layers, which can reduce the lifetime of the OLED and / or cause a narrowing of the luminous area and / or pixel shrinkage, in which the luminous area of ​​the OLED becomes darker over time from the edge towards the inside.

[0007] An object of the invention is to provide an organic optoelectronic component which has a uniform luminance distribution and a uniform luminous image over its optically active surface and which has a long lifetime.

[0008] An object of the invention is to provide a method for producing an organic optoelectronic component which can be carried out simply and / or inexpensively and / or which contributes to the organic optoelectronic component having a uniform luminance distribution and a uniform luminous image over its optically active surface during operation and having a long service life.

[0009] The object is achieved according to one aspect of the invention by an organic optoelectronic component, comprising a substrate having at least a first electrode, a dielectric insulator layer structure arranged on the substrate and in direct physical contact with the first electrode, a dielectric barrier layer formed directly on the insulator layer structure and at least partially directly on the first electrode and covering the lateral side surfaces of the insulator layer structure, an organic functional layer structure formed above the first electrode and on the dielectric barrier layer, and a second electrode formed above the organic functional layer structure.

[0010] Thus, the dielectric barrier layer and the substrate can cooperate to completely enclose and / or embed the insulator layer structure, at least in the region of the organic functional layer structure. The planar overmolding of the insulator layer structure reduces and / or prevents the escape of decomposition products of the material of the insulator layer structure during the production of the organic optoelectronic component and during operation of the organic optoelectronic component. In particular, the escape of decomposition products of the material of the insulator layer structure, which have arisen due to an optimized process control, for example for a transparent first electrode, is reduced and / or prevented. This contributes to ensuring that, for example in an OLED, the luminance across the active area and the luminous image are uniform, and that the narrowing of the luminous field is reduced and / or prevented.This contributes to the particularly long lifetime of the organic optoelectronic component.

[0011] In addition, the robustness of the organic optoelectronic component can be increased because particles present on the substrate can be enclosed by the dielectric barrier layer and are then less or no longer harmful, which can increase the yield in the production of the organic optoelectronic component.

[0012] The material comprising the insulator layer structure or from which the insulator layer structure is formed can be, for example, an organic material, in particular an organic resist, in particular synthetic resin. The material of the dielectric barrier layer is electrically insulating. However, the dielectric barrier layer can be so thin that its electrical function, in particular its electrically insulating function, is not present or at least approximately non-existent. In particular, the dielectric barrier layer can be so thin that, at least theoretically, charge carriers can tunnel through it unhindered or at least almost unhindered. The dielectric barrier layer thus essentially serves to prevent the outgassing of decomposition substances from the insulator layer structure and not to electrically insulate the insulator layer structure.

[0013] The substrate has a first contact section that is electrically coupled to the second electrode and serves to electrically contact the second electrode. The dielectric insulator layer structure has a first insulation barrier that electrically insulates the first electrode from the first contact section. The dielectric barrier layer is formed directly on the first insulation barrier and covers lateral side surfaces of the first insulation barrier. Thus, the first insulation barrier is completely enclosed by the substrate and the dielectric barrier layer, at least in the region of the organic functional layer structure. This helps prevent decomposition substances of the material of the first insulation barrier from outgassing and penetrating the organic functional layer structure located above and / or adjacent to it.

[0014] Optionally, the first contact section can be completely or partially covered by the dielectric barrier layer. The dielectric barrier layer above the first contact section may be formed so thin that, upon electrical contacting of the first contact section via the dielectric barrier layer, charge carriers can tunnel from the first contact section through the dielectric barrier layer to the corresponding electrical contact. Covering the first contact section with the dielectric barrier layer can contribute to reducing or preventing oxidation of the first contact section.

[0015] The material comprising the first insulation barrier or from which the first insulation barrier is formed can be, for example, an organic material, in particular an organic resist, in particular synthetic resin. The material of the first insulation barrier is electrically insulating.

[0016] According to one development, the substrate has a current distribution structure formed directly on the first electrode. The dielectric insulator layer structure has insulator layers formed directly on the current distribution structure and covering the lateral side surfaces of the current distribution structure. The dielectric barrier layer is formed directly on the insulator layers and covering the lateral side surfaces of the insulator layers. The current distribution structure serves to distribute charge carriers evenly over the entire area of ​​the first electrode. The material of the current distribution structure has a high electrical conductivity. The insulator layers serve to prevent charge carriers from penetrating directly from the current distribution structure into the organic functional layer structure without migrating through the first electrode.The power distribution structure can have one or more busbars and / or busbars, each covered by one of the insulator layers. Thus, the power distribution structure is covered by the insulator layers, and the insulator layers are completely enclosed by the first electrode and the dielectric barrier layer, at least in the region of the organic functional layer structure. This helps prevent decomposition substances of the material of the insulator layers from outgassing and penetrating the organic functional layer structure located above and / or adjacent to it.

[0017] The material comprising the insulating layers or from which the insulating layers are formed can be, for example, an organic material, in particular an organic resist, in particular synthetic resin. The material of the insulating layers is electrically insulating.

[0018] The dielectric barrier layer covering the insulating layers can be so thin that it has no electrical function, in particular, it has no electrically insulating effect, and that, at least theoretically, charge carriers can tunnel through the dielectric barrier layer. The dielectric barrier layer thus essentially has the effect of preventing decomposition substances of the insulating layer material from penetrating the surrounding organic functional layer structure.

[0019] According to a further development, the substrate has a second contact section that is electrically coupled to the first electrode and serves to electrically contact the first electrode. A second insulation barrier can be formed between the second contact section and the organic functional layer structure and / or the second electrode. The second insulation barrier can be covered by the dielectric barrier layer, thereby preventing and / or reducing the outgassing of decomposition substances from the second insulation barrier.

[0020] Optionally, the second contact section can be completely or partially covered by the dielectric barrier layer. The dielectric barrier layer above the second contact section may be formed so thin that, upon electrical contacting of the second contact section via the dielectric barrier layer, charge carriers can tunnel from the second contact section through the dielectric barrier layer to the corresponding electrical contact. Covering the second contact section with the dielectric barrier layer can help reduce or prevent oxidation of the second contact section.

[0021] The material comprising the second insulation barrier or from which the second insulation barrier is formed can be, for example, an organic material, in particular an organic resist, in particular synthetic resin. The material of the second insulation barrier is electrically insulating.

[0022] According to a further development, the dielectric barrier layer is formed over the entire first electrode. The dielectric barrier layer is formed so thinly over the first electrode that, during operation of the organic optoelectronic component, charge carriers can tunnel via the dielectric barrier layer from the first electrode through the dielectric barrier layer to the organic functional layer structure or in the opposite direction. Covering the first electrode with the dielectric barrier layer can contribute to the particularly simple formation of the dielectric barrier layer, since the dielectric barrier layer requires little or no structuring.

[0023] According to one development, the dielectric barrier layer is formed over the entire substrate. The substrate has the first electrode and optionally the first and / or second contact section and / or optionally the first and / or second insulation barrier and / or optionally the current distribution structure and the insulator layers. In other words, the substrate can be understood as the basis on which the organic functional layer structure is formed. The first electrode, the contact sections, the insulator layers, and / or the insulation barriers can each be formed over and / or on a carrier. Alternatively, the first electrode itself can serve as the carrier.Covering the substrate with the dielectric barrier layer can make the formation of the dielectric barrier layer particularly easy, since the dielectric barrier layer is simply formed over the entire surface and does not need to be structured.

[0024] According to a further development, the dielectric barrier layer has a thickness of 0.1 nm to 20 nm, for example, from 1 nm to 10 nm, for example, from 2 nm to 7 nm. This contributes to the dielectric barrier layer having no or at least only a negligible electrical function. This allows the dielectric barrier layer to be formed over the entire surface of the first electrode and / or over the entire surface of the substrate.

[0025] According to a further development, the dielectric barrier layer comprises Al2O3, TiO2, ZrO x , ZnO x , HfO xand / or Alucone, Titanocone or a self-assembling monolayer (SAM).

[0026] According to a further aspect of the invention, the object is achieved by a method for producing an organic optoelectronic component. In the method, the substrate, which has at least the first electrode, is formed. The dielectric insulator layer structure is formed on the substrate in direct physical contact with the first electrode. The dielectric barrier layer is formed directly on the insulator layer structure and at least partially directly on the first electrode such that it covers lateral side surfaces of the insulator layer structure. The organic functional layer structure is formed over the first electrode and on the dielectric barrier layer. The second electrode is formed over the organic functional layer structure.

[0027] The above-mentioned developments and / or advantages of the organic optoelectronic component can be readily transferred to the method for producing the organic optoelectronic component.

[0028] Since the dielectric barrier layer is formed before applying the organic functional layer structure, the substrate can be heated before applying the dielectric barrier layer and / or the dielectric barrier layer can be formed at a high temperature

[0029] According to the invention, the substrate is formed to have the first contact portion, which is electrically coupled to the second electrode and serves to electrically contact the second electrode. The dielectric insulator layer structure is formed to have the first insulation barrier, which electrically insulates the first electrode from the first contact portion. The dielectric barrier layer is formed directly on the first insulation barrier such that it covers lateral side surfaces and a vertical surface of the first insulation barrier.

[0030] According to a further development, the substrate is formed to have the current distribution structure formed directly on the first electrode. The dielectric insulating layer structure is formed to have insulating layers formed directly on the current distribution structure and covering the lateral side surfaces of the current distribution structure. The dielectric barrier layer is formed directly on the insulating layers to cover the lateral side surfaces and vertical surfaces of the insulating layers.

[0031] According to a further development, the dielectric barrier layer is formed over the entire first electrode.

[0032] According to a further development, the dielectric barrier layer is formed over the entire substrate.

[0033] According to a further development, the dielectric barrier layer is formed in an ALD process, an MLD process, an MVD process or a PECVD process.

[0034] According to a further development, the dielectric insulating layer structure remains exposed for a predetermined period of time after its formation before the dielectric barrier layer is formed on it. This ensures that a particularly large number of decomposition substances can outgas from the material of the insulating layer structure even before the dielectric barrier layer is formed. This contributes to a particularly low probability that decomposition substances can penetrate the organic functional layer structure after the dielectric barrier layer is formed. The predetermined period of time can be, for example, approximately 2 hours.

[0035] According to a further development, the substrate and / or the insulator layer structure are heated before and / or during the application of the dielectric barrier layer. As a result, the substrate or the insulator layer structure can have a temperature significantly higher than room temperature during the application of the dielectric barrier layer. This can contribute to increasing the density of the dielectric barrier layer compared to a dielectric barrier layer produced at lower temperatures, for example at room temperature or below, whereby the barrier effect against the decomposition substances is particularly good. In particular, the temperature for producing the thin dielectric barrier layer, for example made of Al2O3 and / or produced using an ALD process, for example with a thickness of 4 nm to 6 nm, can be optimized to achieve a particularly dense barrier layer.Furthermore, increasing the temperature of the material of the insulator layer structure causes increased outgassing of the decomposition substances from the material of the insulator layer structure before the dielectric barrier layer is applied. This means that at the time of application of the dielectric barrier layer, only a few decomposition substances remain in the material of the insulator layer structure, whereby the probability of the decomposition substances penetrating the dielectric barrier layer is particularly low due to their small number.

[0036] Furthermore, the quality of the first electrode, particularly if it comprises or is formed from a TCO layer, can be improved by the elevated temperature. A further improvement can be achieved by adding oxygen shortly before applying the dielectric barrier layer.

[0037] Embodiments of the invention are illustrated in the figures and are explained in more detail below.

[0038] They show: Fig. 1 a sectional view of an embodiment of an organic optoelectronic component; Fig. 2 a sectional view of an embodiment of an organic optoelectronic component; Fig. 3 a sectional view of an embodiment of an organic optoelectronic component; Fig. 4 a sectional view of an embodiment of an organic optoelectronic component; Fig. 5 a sectional view of an embodiment of an organic optoelectronic component; Fig. 6 a sectional view of an embodiment of an organic optoelectronic component; Fig. 7 shows a detailed representation of an embodiment of an organic optoelectronic component; Fig. 8 shows a detailed representation of an embodiment of an organic optoelectronic component; Fig. 9 an example of a voltage-luminosity diagram; Fig. 10 an example of a voltage-current density diagram; Fig. 11 an example of a voltage-luminous efficiency diagram; Fig. 12 a flow diagram of an embodiment of a method for producing an organic optoelectronic component.

[0039] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. Since components of embodiments can be positioned in a number of different orientations, the directional terminology is for the purpose of illustration and is in no way limiting. It is understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It is to be understood that the features of the various embodiments described herein may be combined with one another unless specifically indicated otherwise. In the figures, identical or similar elements are designated by identical reference numerals where appropriate.

[0040] An organic optoelectronic component can be an organic electromagnetic radiation-emitting component or an organic electromagnetic radiation-absorbing component. An organic electromagnetic radiation-absorbing component can be, for example, a solar cell. An organic electromagnetic radiation-emitting component can be an organic electromagnetic radiation-emitting semiconductor component and / or can be embodied as an organic electromagnetic radiation-emitting diode or as an organic electromagnetic radiation-emitting transistor. The radiation can be, for example, light in the visible range, UV light, and / or infrared light.In this context, the organic electromagnetic radiation emitting component can be designed, for example, as an organic light emitting diode (OLED) or as an organic light emitting transistor.

[0041] Fig. 1 shows an embodiment of an organic optoelectronic component 1. The organic optoelectronic component 1 has a carrier 12. The carrier 12 can be translucent or transparent. The carrier 12 serves as a carrier element for electronic elements or layers, for example, light-emitting elements. The carrier 12 can, for example, comprise or be formed from plastic, metal, glass, quartz, and / or a semiconductor material. Furthermore, the carrier 12 can comprise or be formed from a plastic film or a laminate with one or more plastic films. The carrier 12 can be mechanically rigid or mechanically flexible.

[0042] An optoelectronic layer structure is formed on the carrier 12. The optoelectronic layer structure has a first electrode layer 14, which has a first electrode 20. A first contact section 16 and a second contact section 18 are formed laterally outwardly on the first electrode layer 14. A first barrier thin film can be formed between the carrier 12 and the first electrode layer 14.

[0043] The first electrode 20 is electrically insulated from the first contact section 16 by means of a first insulation barrier 21. The second contact section 18 is electrically coupled to the first electrode 20 of the optoelectronic layer structure. The first electrode 20 can be configured as an anode or as a cathode. The first electrode 20 can be translucent or transparent. The first electrode 20 comprises an electrically conductive material, for example metal and / or a conductive transparent oxide (transparent conductive oxide, TCO) or a layer stack of several layers comprising metals or TCOs. The first electrode layer 14 and in particular the first electrode 20 can, for example, comprise a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa.One example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The first electrode layer 14 and in particular the first electrode 20 may alternatively or additionally comprise, in addition to the materials mentioned, networks of metallic nanowires and particles, for example, made of Ag, networks of carbon nanotubes, graphene particles and layers, and / or networks of semiconducting nanowires.

[0044] An organic functional layer structure 22 of the optoelectronic layer structure is formed above the first electrode 20. The organic functional layer structure 22 can, for example, have one, two, or more sublayers. For example, the organic functional layer structure 22 can have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and / or an electron injection layer. The hole injection layer serves to reduce the band gap between the first electrode and the hole transport layer. In the hole transport layer, the hole conductivity is greater than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is greater than the hole conductivity. The electron transport layer serves to transport the electrons.The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Furthermore, the organic functional layer structure 22 can comprise one, two, or more functional layer structure units, each of which has the aforementioned sublayers and / or further intermediate layers.

[0045] A second electrode 23 of the optoelectronic layer structure is formed above the organic functional layer structure 22 and is electrically coupled to the first contact section 16. The second contact section 18 is electrically insulated from the organic functional layer structure 22 and from the second electrode 23 by means of a second insulation barrier 23. The second electrode 23 can be formed according to one of the embodiments of the first electrode 20, wherein the first electrode 20 and the second electrode 23 can be formed identically or differently. The first electrode 20 serves, for example, as the anode or cathode of the optoelectronic layer structure. The second electrode 23 serves, corresponding to the first electrode, as the cathode or anode of the optoelectronic layer structure.The carrier 12 with the first electrode layer 14, i.e. with the first electrode 20, the first contact section 16, the second contact section 18 and with the insulation barriers 21, 23 can be referred to as a substrate.

[0046] The optoelectronic layer structure is an electrically and / or optically active region. The active region is, for example, the region of the organic optoelectronic component 1 in which electrical current flows to operate the organic optoelectronic component 1 and / or in which electromagnetic radiation is generated or absorbed. A getter structure (not shown) can be arranged on or above the active region. The getter layer can be translucent, transparent, or opaque. The getter layer can comprise or be formed from a material that absorbs and binds substances that are harmful to the active region.

[0047] An encapsulation layer 24 of the optoelectronic layer structure is formed above the second electrode 23 and partially above the first contact section 16 and partially above the second contact section 18, which encapsulates the optoelectronic layer structure. The encapsulation layer 24 can be formed as a second barrier thin film. The encapsulation layer 24 can also be referred to as thin-film encapsulation. The encapsulation layer 24 forms a barrier against chemical contaminants or atmospheric substances, in particular against water (moisture) and oxygen. The encapsulation layer 24 can be formed as a single layer, a layer stack, or a layer structure.The encapsulation layer 24 can comprise or be formed from: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof. Optionally, the first barrier layer on the carrier 12 can be formed corresponding to a configuration of the encapsulation layer 24.

[0048] A first recess of the encapsulation layer 24 is formed above the first contact section 16, and a second recess of the encapsulation layer 24 is formed above the second contact section 18. A first contact region 32 is exposed in the first recess of the encapsulation layer 24, and a second contact region 34 is exposed in the second recess of the encapsulation layer 24. The first contact region 32 serves to electrically contact the first contact section 16, and the second contact region 34 serves to electrically contact the second contact section 18.

[0049] An adhesive layer 36 is formed above the encapsulation layer 24. The adhesive layer 36 comprises, for example, an adhesive, such as an adhesive, for example a laminating adhesive, a lacquer, and / or a resin. The adhesive layer 36 can, for example, comprise particles that scatter electromagnetic radiation, such as light-scattering particles.

[0050] A cover body 38 is formed over the adhesive layer 36. The adhesive layer 36 serves to attach the cover body 38 to the encapsulation layer 24. The cover body 38 comprises, for example, plastic, glass, and / or metal. For example, the cover body 38 can be formed essentially of glass and have a thin metal layer, for example a metal foil, and / or a graphite layer, for example a graphite laminate, on the glass body. The cover body 38 serves to protect the organic optoelectronic component 1, for example from external mechanical forces. Furthermore, the cover body 38 can serve to distribute and / or dissipate heat generated in the organic optoelectronic component 1.For example, the glass of the cover body 38 can serve as protection against external influences and the metal layer of the cover body 38 can serve to distribute and / or dissipate the heat generated during operation of the organic optoelectronic component 1.

[0051] The insulation barriers 21, 23 are part of an insulator layer structure. A dielectric barrier layer 40 is formed above the substrate and directly on the insulator layer structure and in particular on the insulation barriers 21, 23 in such a way that Fig. 1, the upper vertical surfaces and lateral side surfaces of the insulating layer structure, and in particular of the insulation barriers 21, 23, are completely covered by the dielectric barrier layer 40. In other words, the insulation barriers 21, 23 are completely enclosed by the substrate and the dielectric barrier layer 40. In this description, the term "vertical surface" refers to surfaces of structures that are located vertically at the top in the figures but extend horizontally. Thus, the term "vertical" in this context does not refer to the direction of extension of the corresponding surface, but rather to its position in the figures.

[0052] The material comprising the insulator layer structure and in particular the insulation barriers 21, 23 or from which the insulator layer structure and the insulation barriers 21, 23 are formed can be, for example, an organic material, in particular an organic resist, in particular synthetic resin.

[0053] The material of the dielectric barrier layer 40 is electrically insulating. The dielectric barrier layer 40 is so thin that its electrical function, in particular its electrically insulating function, is not present or at least approximately non-existent. In particular, the dielectric barrier layer 40 is so thin that, at least theoretically, charge carriers can tunnel through it unhindered or at least almost unhindered. In particular, the dielectric barrier layer 40 has a thickness of 0.1 nm to 20 nm, for example, from 1 nm to 10 nm, for example, from 2 nm to 7 nm.

[0054] The dielectric barrier layer 40 serves to prevent the outgassing of decomposition substances from the insulator layer structure and in particular the insulation barriers 21, 23. The dielectric barrier layer 40 is thus so thin that the dielectric barrier layer 40 is electrically and / or optically inactive, regardless of the material used for the dielectric barrier layer 40, and yet offers sufficient protection against decomposition substances from the underlying insulator layer structure penetrating the organic functional layer structure 22.

[0055] The dielectric barrier layer 40 can be deposited directly onto the substrate and the insulator layer structure, in particular from the gas phase, for example, using an ALD process. Alternatively, the dielectric barrier layer 40 can be an MLD layer, an MVD layer, or a PECVD layer, with the dielectric barrier layer 40 generally being deposited from the gas phase. Alternatively, the dielectric barrier layer 40 can be formed by sputtering.

[0056] The dielectric barrier layer 40 comprises, for example, Al2O3, TiO2, ZrO x , ZnO x , HfO x and / or Alucone, Titanocone or a self-assembling monolayer (SAM).

[0057] For example, the dielectric barrier layer 40 is an ALD layer made of Al2O3 with a thickness of 4 nm to 6 nm. During operation, it has no significant short-term, particularly instantaneous, impact on the electro-optical behavior of the organic optoelectronic component 1. However, in the medium and long term, it prevents the outgassing of decomposition products from the material of the insulator layer structure. The dielectric barrier layer 40 thus has a positive medium- to long-term impact on uniform luminance and a uniform luminous image, as well as on the lifetime of the organic optoelectronic component 1.

[0058] Fig. 2 shows an embodiment of an organic optoelectronic component which, for example, largely corresponds to the Fig. 1. The optoelectronic component 1 has the dielectric barrier layer 40, which in this embodiment extends not only over the insulation barriers 21, 23 but also over the entire first electrode 20. However, the electrical function of the first electrode remains unchanged, or at least approximately unchanged, since the dielectric barrier layer 40 is so thin that the charge carriers can tunnel through it.

[0059] In particular, the dielectric barrier layer 40 is formed from an electrically insulating material and is designed to be so thin that charge carriers, for example holes or electrons, can pass from the underlying first electrode 20 to the organic functional layer structure 22 lying above the dielectric barrier layer 40 or exactly the other way around, for example via tunnel effects, even though the dielectric barrier layer 40 is designed as a flat, closed layer.

[0060] Fig. 3 shows an embodiment of an organic optoelectronic component which, for example, largely corresponds to the one shown in Fig. 2. The optoelectronic component 1 has the dielectric barrier layer 40, which in this embodiment extends not only over the insulation barriers 21, 23 and the first electrode 20 but also over the first and second contact sections 16, 18. However, the electrical function of the first electrode and the contact sections 16, 18 remains unchanged, or at least approximately unchanged, since the dielectric barrier layer 40 is so thin that the charge carriers can tunnel through it.

[0061] In particular, the dielectric barrier layer 40 is formed from an electrically insulating material and is designed to be so thin that charge carriers, for example holes or electrons, can be transferred from the underlying contact sections 16, 18 to Fig. 3, electrical contacts located above the dielectric barrier layer 40 can be used to electrically contact the organic optoelectronic component 1, or vice versa, for example via tunneling effects, even though the dielectric barrier layer 40 is formed as a flat, closed layer. Furthermore, the dielectric barrier layer 40 can contribute to preventing the first contact region 32 and / or the second contact region 34 from oxidizing.

[0062] Fig. 4 shows an embodiment of an organic optoelectronic component which, for example, largely corresponds to the one shown in Fig. 1. The optoelectronic component 1 has the dielectric barrier layer 40, which in this embodiment extends not only over the insulation barriers 21, 23 but also over a current distribution structure 42 and insulator layers 44.

[0063] The power distribution structure 42 has or is formed by a plurality of busbars, also referred to as busbars. The power distribution structure 42 and in particular the busbars are each covered by one of the insulator layers 44. In particular, the insulator layers 44 cover Fig. 4 upper vertical surfaces, each extending in the lateral direction, and lateral side surfaces, each extending in the vertical direction, of the current distribution structure 42. The insulator layers 44 comprise an electrically insulating material and are formed so thick that they prevent charge carriers from the current distribution structure 42 from passing directly into the organic functional layer structure 22 and can only reach the organic functional layer structure 22 via the first electrode 20.

[0064] The current distribution structure 42 and the insulator layers 44 are part of the substrate of the organic optoelectronic component 1.

[0065] The insulator layers 44 are covered by the dielectric barrier layer 40. In particular, the dielectric barrier layer 40 covers Fig. 4 upper vertical surfaces, each extending in the lateral direction, and lateral side surfaces, each extending in the vertical direction, of the insulator layers 44. The dielectric barrier layer 40 prevents outgassing of decomposition substances from the material of the insulator layer structure, in particular the insulator layers 44.

[0066] Optionally, the dielectric barrier layer 40 may be formed exclusively over the insulator layers 44 and not over the insulation barriers 21, 23.

[0067] Fig. 5 shows an embodiment of an organic optoelectronic component which, for example, largely corresponds to the Fig. 2. The optoelectronic component 1 has the dielectric barrier layer 40, which in this embodiment extends not only over the insulation barriers 21, 23 and over the current distribution structure 42 and the insulator layers 44, but also over the first electrode 20.

[0068] Fig. 6 shows an embodiment of an organic optoelectronic component which, for example, largely corresponds to the one shown in Fig. 3. The optoelectronic component 1 has the dielectric barrier layer 40, which in this embodiment extends not only over the insulation barriers 21, 23, over the current distribution structure 42 and the insulator layers 44, and over the first electrode 20, but also over the contact sections 16, 18. In other words, the dielectric barrier layer 40 extends over the entire substrate of the organic optoelectronic component 1.

[0069] Fig. 7 shows a detailed representation of an embodiment of an organic optoelectronic component, for example one of the above-mentioned with reference to the Fig. 4, Fig. 5 and Fig. 6 explained organic optoelectronic components 1. In particular, Fig. 7 a detailed view of the power distribution structure 42, in particular a busbar of the power distribution structure 42, and the corresponding insulator layer 44.

[0070] The current distribution structure 42 has three superimposed layers, in particular a first busbar layer 46 formed directly on the first electrode 20, a second busbar layer 48 formed on the first busbar layer 46, and a third busbar layer 50 formed on the second busbar layer 48. The first busbar layer 46 comprises, for example, molybdenum or is formed therefrom, the second busbar layer 48 comprises, for example, aluminum or is formed therefrom, and the third busbar layer 50 comprises, for example, molybdenum or is formed therefrom.

[0071] In cross section, the first electrode 20 and the insulator layers 44 completely enclose the current distribution structure 42, in particular the busbars.

[0072] Fig. 8 shows a detailed representation of an embodiment of an organic optoelectronic component, for example the one with reference to Fig. 7, wherein the dielectric barrier layer 40 is formed on the first electrode 20 and the insulator layer 44, and wherein the organic functional layer structure 22 is formed on the dielectric barrier layer 40.

[0073] In cross-section, the dielectric barrier layer 40 and the first electrode 20 completely enclose the insulator layer structure, in particular the insulator layer 44. The insulator layer 44 around the current distribution structure 42 prevents charge carriers from passing directly from the current distribution structure 42 into the organic functional layer structure 22. The charge carriers pass exclusively via charge carrier paths 52 from the current distribution structure 42 into the organic functional layer structure 22. The charge carriers can tunnel unhindered, or at least almost unhindered, through the dielectric barrier layer 40 because the latter is correspondingly thin. Nevertheless, the dielectric barrier layer 40 prevents or reduces the outgassing of decomposition substances from the insulator layer structure, in particular the insulator layer 44, into the organic functional layer structure 22.

[0074] For example, the dielectric barrier layer comprises AlO x or TiO x on or is formed from it and / or has a thickness in a range of, for example, 2 nm to 7 nm.

[0075] Fig. Figure 9 shows an example of a voltage-luminosity diagram. The voltage-luminosity diagram shows several measurement curves that show the luminosity as a function of the voltage applied to the organic optoelectronic component 1.

[0076] The various measurement curves relate to different current distribution structures 42, in particular current distribution structures 42 with different busbars, in particular different with regard to the material from which they are formed, and different dielectric barrier layers 40 formed thereon, in particular different with regard to the material used from which they are formed, wherein the dielectric barrier layers 40 all have a thickness in the range of 2 nm to 7 nm.

[0077] The measurement curves are so close to each other that they cannot be shown separately on the scale shown. The voltage-luminosity diagram thus shows that the dielectric barrier layer 40 has no significant or at least only a negligible influence on the luminosity of the organic optoelectronic component 1.

[0078] Fig. Figure 10 shows an example of a voltage-current density diagram. The voltage-current density diagram shows several measurement curves that show the current density of a current flowing through the organic optoelectronic component 1 during operation as a function of a voltage applied to the organic optoelectronic component 1.

[0079] The different measurement curves relate to different current distribution structures 42, in particular current distribution structures 42 with different busbars, in particular different with regard to the material from which they are formed, and different dielectric barrier layers 40 formed thereon, in particular different with regard to the material used from which they are formed, wherein the dielectric barrier layers 40 all have a thickness of 2 nm or 3 nm.

[0080] In the relevant operating range starting at 6 V, the measurement curves are at least partially so close to each other that they cannot be shown separately on the scale shown. The voltage-current density diagram thus shows that the dielectric barrier layer 40 has no significant or at least only a negligible influence on the current density in the organic optoelectronic component 1.

[0081] Fig. Figure 11 shows an example of a voltage-luminous efficiency diagram. The voltage-luminous efficiency diagram shows several measurement curves that show the luminous efficiency of the organic optoelectronic component 1 as a function of the voltage applied to the organic optoelectronic component 1.

[0082] The different measurement curves relate to different current distribution structures 42, in particular current distribution structures 42 with different busbars, in particular different with regard to the material from which they are formed, and different dielectric barrier layers 40 formed thereon, in particular different with regard to the material used from which they are formed, wherein the dielectric barrier layers 40 all have a thickness of 2 nm or 3 nm.

[0083] The measurement curves are at least partially so close to each other in the relevant operating range between 6 V and 12 V that they cannot be shown separately in the relevant operating range on the scale shown. The voltage-luminous efficiency diagram thus shows that the dielectric barrier layer 40 has no significant or at least only a negligible influence on the luminous efficiency of the organic optoelectronic component 1.

[0084] Fig. 12 shows a flow diagram of a method for producing an organic optoelectronic component, for example the optoelectronic component 1 explained above.

[0085] In a step S2, a substrate with a first electrode is formed. For example, the substrate is formed with the first electrode 20. Optionally, the substrate can be formed such that it has the first electrode layer 14, in particular the first electrode 20, and the contact sections 16, 18. Furthermore, part of the insulator layer structure 42 can optionally already be formed in step S2; in particular, the insulation barriers 21, 23 can be formed. The insulation barriers 21, 23 can be parts of the substrate.

[0086] In an optional step S4, a current distribution structure can be formed. For example, in step S4, the current distribution structure 42 can be formed on the first electrode 20.

[0087] In step S6, an insulator layer structure is formed. For example, the insulator layer structure 42 explained above is formed. The insulator layer structure 42 comprises the insulation barriers 21, 23 and / or the insulator layers 44. In particular, in step S6, the insulator layers 44 can be formed on the corresponding busbars of the insulator layer structure 42.

[0088] In a step S8, a dielectric barrier layer is formed. For example, the dielectric barrier layer 40 explained above is formed. The dielectric barrier layer 40 can be formed over the entire substrate. Alternatively, the dielectric barrier layer 40 can be formed only over the insulator layer structure, in particular the insulation barriers 21, 23 and / or the insulator layers 44, and / or the first electrode 20. The dielectric barrier layer 40 is deposited from the gas phase directly onto the substrate, in particular using an ALD process. Alternatively, the dielectric barrier layer 40 can be deposited using an MLD process, an MVD process, or a PECVD process, or can be formed by sputtering.

[0089] Optionally, after the formation of the insulator layer structure, a predetermined period of time can be allowed to elapse before the dielectric barrier layer 40 is formed thereover. During this predetermined period of time, the decomposition substances can outgas unhindered from the insulator layer structure without posing a risk to the organic functional layer structure. This reduces the number of decomposition substances in the insulator layer structure even before the formation of the dielectric barrier layer 40. The predetermined period of time can be, for example, between 1 and 3 hours, for example approximately 2 hours. During this predetermined period of time, the substrate with the dielectric barrier layer 40 can be heated, thereby promoting the outgassing of the decomposition substances before the formation of the dielectric barrier layer 40.

[0090] In a step S10, an organic material, in particular an organic functional layer structure, is formed. For example, in step S10, the organic functional layer structure 22 is formed over the substrate and over the dielectric barrier layer 40.

[0091] In a step S12, a second electrode is formed. In particular, the second electrode 23 is formed over the organic functional layer structure 22.

[0092] In an optional step S14, a cover may be formed or arranged over the second electrode. For example, the cover may comprise the encapsulation layer 24, the adhesive layer 36, and / or the cover body 38.

[0093] The invention is not limited to the specified embodiments. For example, in all embodiments, one of the insulation barriers 21, 23, for example, the second insulation barrier 23, can be omitted. Furthermore, the insulator layer structure can have additional insulating structures formed from the material that outgasses decomposition substances over time, and the corresponding insulating structures can also be covered by the dielectric barrier layer 40.

Claims

[1] Organic optoelectronic component (1), with a substrate having at least one first electrode (20), a dielectric insulator layer structure disposed on the substrate and in direct physical contact with the first electrode (20), a dielectric barrier layer (40) formed directly on the insulator layer structure and at least partially directly on the first electrode (20) and covering the lateral side surfaces of the insulator layer structure, an organic functional layer structure (22) formed over the first electrode (20) and on the dielectric barrier layer (40), and a second electrode (23) formed over the organic functional layer structure (22), wherein the substrate has a first contact section (16) which is electrically coupled to the second electrode (23) and which serves to electrically contact the second electrode (23), the dielectric insulator layer structure has a first insulation barrier (21) which electrically insulates the first electrode (20) from the first contact portion (16), and the dielectric barrier layer (40) is formed directly on the first insulation barrier (21) and covers lateral side surfaces of the first insulation barrier (21). [2] Organic optoelectronic component (1) according to the preceding claim, in which the substrate has a current distribution structure (42) formed directly on the first electrode (20), the dielectric insulator layer structure comprises insulator layers (44) which are formed directly on the current distribution structure (42) and which cover the lateral side surfaces of the current distribution structure (42) and the dielectric barrier layer (40) is formed directly on the insulator layers (44) and covers lateral side surfaces of the insulator layers (44). [3] Organic optoelectronic component (1) according to one of the preceding claims, wherein the substrate has a second contact section (18) which is electrically coupled to the first electrode (20) and which serves to electrically contact the first electrode (20). [4] Organic optoelectronic component (1) according to one of the preceding claims, wherein the dielectric barrier layer (40) is formed over the entire first electrode (20). [5] Organic optoelectronic component (1) according to claim 4, wherein the dielectric barrier layer (40) is formed over the entire substrate. [6] Organic optoelectronic component (1) according to one of the preceding claims, wherein the dielectric barrier layer (40) has a thickness of 0.1 nm to 20 nm, for example of 1 nm to 10 nm, for example of 2 nm to 7 nm. [7] Organic optoelectronic component (1) according to one of the preceding claims, in which the dielectric barrier layer (40) comprises Al2O3, TiO2, ZrO x , ZnO x , HfO x and / or Alucone, Titanocone or a self-aligned monolayer. [8] Method for producing an organic optoelectronic component (1), in which a substrate having at least one first electrode (20) is formed, a dielectric insulator layer structure is formed on the substrate in direct physical contact with the first electrode (20), a dielectric barrier layer (40) is formed directly on the insulator layer structure and at least partially directly on the first electrode (20) so that it covers lateral side surfaces of the insulator layer structure, an organic functional layer structure (22) is formed over the first electrode (20) and on the dielectric barrier layer (40), and a second electrode (23) is formed over the organic functional layer structure (22), wherein the substrate has a first contact section (16) which is electrically coupled to the second electrode (23) and which serves to electrically contact the second electrode (23), the dielectric insulator layer structure has a first insulation barrier (21) which electrically insulates the first electrode (20) from the first contact portion (16), and the dielectric barrier layer (40) is formed directly on the first insulation barrier (21) and covers lateral side surfaces of the first insulation barrier (21). [9] Method according to claim 8, in which the substrate is formed to have a current distribution structure (42) formed directly on the first electrode (20), the dielectric insulator layer structure is formed to have insulator layers (44) formed directly on the current distribution structure (42) and covering the lateral side surfaces of the current distribution structure (42), and the dielectric barrier layer (40) is formed directly on the insulator layers (44) so ​​as to cover lateral side surfaces and vertical surfaces of the insulator layers (44). [10] A method according to any one of claims 8 or 9, wherein the dielectric barrier layer (40) is formed over the entire first electrode (20). [11] The method of claim 10, wherein the dielectric barrier layer (40) is formed over the entire substrate. [12] A method according to any one of claims 8 to 11, wherein the dielectric barrier layer (40) is formed in an ALD process, an MLD process, an MVD process or a PECVD process. [13] Method according to one of claims 8 to 12, wherein the dielectric insulator layer structure remains exposed after its formation for a predetermined period of time before the dielectric barrier layer (40) is formed thereon. [14] Method according to one of claims 8 to 13, wherein the substrate and / or the insulator layer structure are heated before and / or during the application of the dielectric barrier layer.

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