Optoelectronic component and method for manufacturing an optoelectronic component

Abstract

Optoelectronic device (10) comprising an electrically conductive layer (12), an electrically insulating layer (40) formed over a portion of the electrically conductive layer (12), a weakly conductive encapsulation layer (24) formed outside the portion on the electrically conductive layer (12) and over the portion on the electrically insulating layer (40), a first electrode (20) formed over the portion on the weakly conductive encapsulation layer (24), an organic functional layer structure (22) formed on the first electrode (20), and a second electrode (23) formed over the portion on the organic functional layer structure (22) and outside the portion on the weakly conductive encapsulation layer (24).wherein the second electrode (23) is electrically contacted with the electrically conductive layer (12) by the electrically weakly conductive encapsulation layer (24).

Description

[0001] The invention relates to an optoelectronic component and a method for manufacturing an optoelectronic component.

[0002] An optoelectronic component can be either an electromagnetic radiation emitter or an electromagnetic radiation absorber. An electromagnetic radiation absorber could be, for example, a solar cell. An electromagnetic radiation emitter could be, for example, a light-emitting component, such as an LED or an OLED. Organic optoelectronic components, so-called organic optoelectronic components, are finding increasingly widespread application. For example, organic light-emitting diodes (OLEDs) are increasingly being used in general lighting, for instance, as area light sources.

[0003] An organic optoelectronic device, such as an OLED, can have an anode and a cathode with an organic functional layer system between them. This organic functional layer system can include one or more emitter layers in which electromagnetic radiation is generated, a charge-generating layer (CGL) structure consisting of two or more CGLs for charge-generating technology, one or more hole-blocking layers (HTLs), and one or more electron-blocking layers (ETLs) to direct current flow.

[0004] Top-emitting OLEDs, in which an electrically conductive substrate is used to distribute current from the contacts to the transparent top electrode, are often manufactured with structured planarization and / or insulation. In the case of a flexible OLED, a metal foil, for example, can be used as the electrically conductive substrate.

[0005] Fig. Figure 1 shows a side-sectional view of such a top-emitting first conventional OLED. 1 .

[0006] Fig. 2 shows a top view of the first conventional OLED 1 according to Fig. 1. An electrically insulating layer, usually organic, that acts as a planarizing or insulating layer. 40 In the finished component, it is in direct physical contact with an electrically conductive layer that serves as a substrate and / or carrier. 12and on the other hand, in direct physical contact with a functional layered structure that is in Fig. 1. From bottom to top, a first electrode 20 , an organic functional layered structure 22 and a second electrode 23 features the first conventional OLED 1 The second electrode 23 is in initial contact phases 16 in direct physical contact with the electrically conductive layer 12 and can be electrically contacted via this. The first electrode 20 has a second contact section 18 on, in which the first electrode 20 is exposed and can be electrically contacted.

[0007] Does it originate from planarization or insulation, especially of the electrically insulating layer? 40 , to outgassing, which for example includes solvent residues from the material of the electrically insulating layer 40The first conventional OLED may contain water residues from one or more cleaning steps or other contaminants, such as incompatible material components like crosslinkers and / or hardeners, etc. 1 as a result, they will be damaged.

[0008] To avoid this, a “bottom TFE” is sometimes used, i.e., a thin-film encapsulation between the planarization or insulation and the OLED layer stack. 20 , 22 , 23 .

[0009] Fig. Figure 3 shows a cross-sectional view of such a second conventional OLED. 2 with an electrically insulating encapsulation layer 5 .

[0010] Fig. 4 shows a top view of the second conventional OLED. 2 according to Fig. 3. The electrically insulating encapsulation layer 5 is above the electrically insulating layer 40in direct physical contact with the electrically insulating layer 40 formed and outside the electrically insulating layer 40 in direct physical contact with the electrically conductive layer 12 formed. In the case of the electrically insulating encapsulation layer 5 This involves one or more transparent, electrically insulating layers, for example applied using ALD, such as nanolaminates made of aluminum oxide and titanium oxide. Alternatively, the encapsulation layer can be 5They can also be translucent and / or opaque. Generally, bottom encapsulation uses layers similar to those found in top TFEs, i.e., encapsulation layers that are formed over and encapsulate the functional layer structures of the corresponding optoelectronic components, such as electrically insulating ALD layers. For example, DE 10 2009 024 411 A1 shows such top TFEs and the materials and / or material combinations used for them.

[0011] However, it must be ensured that the transparent second electrode 23 despite the electrically insulating bottom TFE, especially the electrically insulating encapsulation layer 5 , in electrical contact with the metal substrate, in particular with the electrically conductive layer 12Therefore, if such an encapsulation layer is used as the bottom TFE, at least one additional process step is necessary, particularly after the application of the bottom TFE and before the fabrication of the top electrode. In this process step, the insulating bottom TFE is removed from the metal substrate by laser ablation in a partial area along and slightly outside the structured planarization or insulation. In this exposed partial area, an electrical contact is then created between the metal substrate and the top electrode when the top electrode is applied. Therefore, the second conventional OLED exhibits 2 the first contact sections 16 on, in which the material of the second electrode 23 through corresponding cutouts in the electrically insulating encapsulation layer 5 extends through it.

[0012] One object of the invention is to provide an optoelectronic component that can be manufactured quickly, easily, precisely, cost-effectively and / or with low scrap.

[0013] One object of the invention is to provide a method for manufacturing an optoelectronic component that is fast, simple, precise, cost-effective and / or involves low waste.

[0014] According to one aspect of the invention, a problem is solved by an optoelectronic component comprising: an electrically conductive layer; an electrically insulating layer formed over a portion of the electrically conductive layer; a weakly conductive encapsulation layer formed outside the portion on the electrically conductive layer and over the portion on the electrically insulating layer; a first electrode formed over the portion on the weakly conductive encapsulation layer; an organic functional layer structure formed on the first electrode; and a second electrode formed in the portion on the organic functional layer structure and outside the portion on the weakly conductive encapsulation layer.

[0015] The second electrode, for example a transparent top electrode, is thus electrically contacted by the electrically conductive layer, which can be a metal substrate, for example, via the electrically weakly conductive encapsulation layer, designed as bottom TFE. This electrical contact occurs across the entire area where the second electrode and the electrically conductive layer overlap without any further intermediate layers, such as an electrically insulating layer or an organic functional layer structure. This is the same area where electrical contact between the second electrode and the electrically conductive layer would occur even without the use of the encapsulation layer, particularly the bottom TFE; in both cases, the areas where electrical contact occurs are the same size.

[0016] Thus, the electrical contact of the second electrode via the electrically conductive layer can be achieved over a relatively large area. This contributes to a particularly good electrical connection between the second electrode and the electrically conductive layer. Furthermore, partial removal of the encapsulation layer is not necessary for the electrical contact of the second electrode. This eliminates at least one process step, namely the removal of the encapsulation layer. At the same time, the encapsulation layer prevents unwanted substances, for example from the electrically insulating layer, from migrating into the overlying organic functional layer structure. This contributes to the reliable operation and long service life of the optoelectronic component.The application of the encapsulation layer, in particular the bottom TFE, can be unstructured, for example in an ALD process, i.e. uniformly over the entire component surface, in particular over the entire surface of the electrically conductive layer.

[0017] These technical effects contribute to the fact that the optoelectronic component can be manufactured quickly, easily, precisely, cost-effectively and / or with low waste.

[0018] The elimination of the additional process step for laser ablation of the bottom TFE alone offers the potential for a faster overall manufacturing process and lower production costs, avoids the risk of rejects or multiplier problems due to laser ablation debris, avoids incompatibilities between the bottom TFE laser ablation process and the temporary application of the electrically conductive layer, especially the metal substrate on glass substrates, and offers the possibility of a vacuum inline process with bottom TFE deposition and deposition of the organic functional layer structures without problematic intermediate steps.Furthermore, the second electrode does not need to extend particularly far beyond an edge of the structured electrically insulating layer, for example the planarization and / or insulation layer, which, in contrast, may be the case with laser ablation of the bottom TFE, in order to provide sufficient space and / or tolerances for the laser-ablated area, thus allowing a small edge area and / or a high fill factor to be maintained, similar to optoelectronic components without a bottom TFE.

[0019] At first glance, the electrically weakly conductive encapsulation layer, on which the second electrode is formed and connected to the electrically conductive layer, and on which the first electrode is formed, presents the following problem: The electrically weakly conductive bottom TFE provides an electrical connection between the first and second electrodes, for example, the anode and cathode, and / or between the first electrode and the electrically conductive layer, for example, the substrate. The electrically conductive layer is used for current conduction to the second electrode and, typically, even as an electrical contact for the second electrode. Therefore, there appears to be a risk of a short circuit between the first and second electrodes and / or high leakage currents.In fact, this is not a problem due to the usually very different dimensions of the encapsulation layer in the thickness direction, for example in the Z direction, compared to its lateral extension directions, for example in the X and Y directions.

[0020] For example, in an ALD bottom TFE with a typical layer thickness of 50 nm, the current only needs to travel 50 nm in the thickness direction to establish an electrical connection between the second electrode and the electrically conductive layer. Therefore, it may be sufficient for the encapsulation layer to have only weak electrical conductivity to achieve the desired low voltage drop. On the other hand, the distance between the first electrode and the electrically conductive layer along the encapsulation layer is typically a few millimeters. Consequently, the weak electrical conductivity of the encapsulation layer becomes significant, and no relevant electrical connection is established between the first electrode and the electrically conductive layer via the thin, weakly conductive encapsulation layer, which can then be disregarded.In contrast, encapsulation layers known from the prior art are designed as electrical insulators and / or made of electrically insulating material and connect the two electrodes together, or they are electrically conductive barrier layers that are used as transparent electrodes and have the highest possible electrical conductivities for lateral current distribution, but do not create an electrically conductive connection between the electrodes.

[0021] According to a further development, the electrically weakly conductive encapsulation layer has a thickness in the range of 1 nm to 1000 nm, particularly from 10 nm to 150 nm, and especially from 25 nm to 75 nm, for example, approximately 50 nm. This ensures that, despite the inherently weak electrical conductivity of the encapsulation layer, the electrical conductivity in the thickness direction is sufficiently good to guarantee reliable electrical contact of the second electrode via the electrically conductive layer, even through the encapsulation layer. Simultaneously, this ensures that, despite the electrical coupling of the first electrode to the second electrode via the encapsulation layer in the lateral direction (i.e., perpendicular to the thickness direction), no short circuit occurs and / or that leakage currents flowing due to this electrical connection are negligibly small.

[0022] According to a further development, the electrically weakly conductive encapsulation layer exhibits a specific resistance in the range of 0.01 Ωm to 10,000 Ωm, particularly from 0.1 Ωm to 1,000 Ωm, and especially from 1 Ωm to 100 Ωm, for example, approximately 10 Ωm. This ensures that the electrical conductivity in the thickness direction of the thin encapsulation layer is sufficiently good to guarantee reliable electrical contact of the second electrode via the electrically conductive layer, even through the electrically weakly conductive encapsulation layer. Simultaneously, this prevents a short circuit from occurring despite the electrical coupling of the first electrode to the second electrode via the electrically weakly conductive encapsulation layer in the lateral direction (i.e., perpendicular to the thickness direction), and / or that any leakage currents flowing due to this electrical connection are negligibly small.

[0023] Thus, in this application, a layer or layered structure being electrically weakly conductive or having weak electrical conductivity means that the layer or layered structure has a resistivity in the range of 0.01 Ωm to 10,000 Ωm, in particular from 0.1 Ωm to 1,000 Ωm, and especially from 1 Ωm to 100 Ωm, for example approximately 10 Ωm. In contrast, in this application, a layer or layered structure being electrically insulating or an electrical insulator means that the layer or layered structure has a resistivity greater than 10 Ωm. 8 Ωm. Furthermore, in this application, a layer or layered structure is electrically conductive or has high electrical conductivity if the corresponding layer or layered structure has a specific resistance of less than 0.001 Ωm.

[0024] According to further training, the minimum distance between the first and second electrodes along the electrically weakly conductive encapsulation layer is in the range of 0.01 mm to 50 mm, particularly 0.1 mm to 5 mm, and especially 0.4 mm to 2 mm, for example, approximately 1 mm. This ensures that, despite the electrical coupling of the first and second electrodes via the thin and electrically weakly conductive encapsulation layer in the lateral direction (i.e., perpendicular to the thickness direction), no short circuit occurs and / or that leakage currents flowing due to this electrical connection are negligibly small.

[0025] According to a further development, the electrically weakly conductive encapsulation layer above the sub-area is formed in direct physical contact with the electrically insulating layer. In other words, the electrically weakly conductive encapsulation layer is formed directly on the electrically insulating layer. Alternatively or additionally, the electrically weakly conductive encapsulation layer is formed outside the sub-area in direct physical contact with the electrically conductive layer. In other words, the electrically weakly conductive encapsulation layer is formed outside the sub-area, for example, laterally adjacent to the electrically insulating layer, directly on the electrically conductive layer.The direct physical contact of the second electrode with the electrically weakly conductive encapsulation layer, and the direct physical contact between the electrically weakly conductive encapsulation layer and the electrically conductive layer, contribute to particularly good electrical contact between the second electrode and the electrically conductive layer. Alternatively or additionally, the first electrode is in direct physical contact with the electrically weakly conductive encapsulation layer. In other words, the first electrode is formed directly on the electrically weakly conductive encapsulation layer, particularly over the section and / or the electrically insulating layer. Alternatively or additionally, the second electrode is in direct physical contact with the electrically weakly conductive encapsulation layer.

[0026] According to further training, the electrically weakly conductive encapsulation layer contains or is formed from aluminium zinc oxide and / or doped aluminium zinc oxide.

[0027] According to a further development, the electrically conductive layer serves as a substrate or support for the optoelectronic component. In other words, the electrically conductive layer is a mechanically stabilizing element of the optoelectronic component and / or serves as a starting point for the formation of further layers of the optoelectronic component during its fabrication.

[0028] According to a further aspect of the invention, the problem is solved by a method for manufacturing an optoelectronic component in which: an electrically conductive layer is provided; an electrically insulating layer is formed over a portion of the electrically conductive layer; a weakly conductive encapsulation layer is formed outside the portion on the electrically conductive layer and over the portion on the electrically insulating layer; a first electrode is formed over the portion on the electrically conductive encapsulation layer; an organic functional layer structure is formed on the first electrode; and a second electrode is formed in the portion on the organic functional layer structure and outside the portion on the electrically conductive encapsulation layer.

[0029] The advantages and further developments of the optoelectronic component mentioned above can readily be transferred to the method for manufacturing the optoelectronic component.

[0030] According to further training, the electrically weakly conductive encapsulation layer is formed in an ALD process.

[0031] According to a further development, the electrically weakly conductive encapsulation layer is formed with a thickness in the range of 1 nm to 1000 nm, in particular from 10 nm to 150 nm, especially from 25 nm to 75 nm, for example from approximately 50 nm.

[0032] According to a further development, the electrically weakly conductive encapsulation layer has a specific resistance in a range of 0.01 Ωm to 10000 Ωm, in particular from 0.1 Ωm to 1000 Ωm, in particular from 1 Ωm to 100 Ωm, for example approximately Ωm, and is designed accordingly.

[0033] According to further training, a minimum distance from the first electrode to the second electrode along the electrically conductive encapsulation layer is in a range of 0.01 mm to 50 mm, in particular from 0.1 mm to 5 mm, especially from 0.4 mm to 2 mm, for example at approximately 1 mm.

[0034] According to further training, the electrically conductive encapsulation layer above the sub-area is formed in direct physical contact with the electrically insulating layer. Alternatively or additionally, the electrically conductive encapsulation layer is formed outside the sub-area in direct physical contact with the electrically conductive layer. Alternatively or additionally, the first electrode is formed in direct physical contact with the electrically conductive encapsulation layer. Alternatively or additionally, the second electrode is formed in direct physical contact with the electrically conductive encapsulation layer.

[0035] According to further training, the electrically weakly conductive encapsulation layer contains or is formed from aluminium zinc oxide and / or doped aluminium zinc oxide.

[0036] According to further training, the electrically conductive layer is used as a substrate or carrier of the optoelectronic component.

[0037] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0038] They show:

[0039] Fig. 1 a lateral sectional view of a conventional optoelectronic component;

[0040] Fig. 2 a top view of the conventional optoelectronic component according to Fig. 1;

[0041] Fig. 3 a lateral sectional view of a conventional optoelectronic component;

[0042] Fig. 4 a top view of the conventional optoelectronic component according to Fig. 3;

[0043] Fig. 5 a lateral sectional view of an embodiment of an optoelectronic component;

[0044] Fig. 6 a top view of the optoelectronic component according to Fig. 5;

[0045] Fig. 7 a lateral sectional view of an embodiment of an optoelectronic component;

[0046] Fig. 8 a flowchart of an exemplary embodiment of a method for manufacturing an optoelectronic component.

[0047] The following detailed description refers to the accompanying drawings, which form part of this description and in which specific embodiments are shown for illustration purposes, illustrating how the invention can be implemented. Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves only for illustration and is in no way restrictive. It is understood that other embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention. It is understood that the features of the various embodiments described herein may be combined with one another unless specifically stated otherwise.The following detailed description is therefore not to be interpreted in a restrictive sense, and the scope of protection of the present invention is defined by the appended claims. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0048] An optoelectronic component can be either an electromagnetic radiation emitter or an electromagnetic radiation absorber. An electromagnetic radiation absorber can be, for example, a solar cell. An electromagnetic radiation emitter can, in various embodiments, be an electromagnetic radiation emitting semiconductor component and / or be configured as an electromagnetic radiation emitting diode, an organic electromagnetic radiation emitting diode, an electromagnetic radiation emitting transistor, or an organic electromagnetic radiation emitting transistor. The radiation can be, for example, visible light, ultraviolet light, and / or infrared light.In this context, the electromagnetic radiation-emitting component can be designed, for example, as a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor. The light-emitting component can be part of an integrated circuit in various embodiments. Furthermore, multiple light-emitting components can be provided, for example, housed in a common package.

[0049] Fig. Figure 1 shows a side sectional view of a conventional optoelectronic component. 1 The optoelectronic component 1 has an electrically conductive layer 12 on. On a sub-area of ​​the electrically conductive layer 12 is an electrically insulating layer 40formed. On the electrically insulating layer 40 is a first electrode 20 trained. On the first electrode 20 is an organic functional layered structure 22 Designed to emit and / or absorb light. Based on the organic functional layer structure. 22 is a second electrode 23 formed, which are characterized by the organic functional layer structure 22 outwards to an edge of the electrically insulating layer 40 and onto the electrically conductive layer 12 outside the sub-area of ​​the electrically conductive layer 12 , also laterally next to the electrically insulating layer 40 , extends.

[0050] In the area where the second electrode 23 in direct physical contact with the electrically conductive layer 12 is a first contact section 16formed. In the first contact phase 16 is the second electrode 23 by means of the electrically conductive layer 12 electrically contacted. Thus, the electrically conductive layer serves to 12 for electrically contacting the second electrode 23 .

[0051] Fig. Figure 2 shows a top view of the conventional optoelectronic component 1 according to Fig. 1. From Fig. 1 shows that the organic functional layer structure 22 , the first electrode 20 and the electrically insulating layer 40 on two sides under the second electrode 23 stand out. In particular, the first electrode stands out. 20 on at least one of the two sides such as under the second electrode 23 and beneath the organic functional layer structure 22 it emerged that a second contact section from her 18is formed, which is exposed and in which the first electrode 20 It can be electrically contacted.

[0052] Fig. Figure 3 shows a side sectional view of a conventional optoelectronic component. 2 , which, for example, largely corresponds to the in Fig. 1 conventional optoelectronic component shown 1 can correspond. The conventional optoelectronic component 2 features an electrically insulating encapsulation layer 5 on, which extend across the electrically insulating layer 40 and across the electrically insulating layer 40 outwards to the electrically conductive layer 12 extends and the electrically insulating layer 40 encapsulated.

[0053] Outside the sub-area of ​​the electrically conductive layer 12 , in which the electrically insulating layer 40The electrically insulating encapsulation layer is formed 5 Recesses in which the second electrode is located 23 through the electrically insulating encapsulation layer 5 through to the electrically conductive layer 12 extends and is in direct physical contact with it, and in which the first contact sections 16 are formed. The second electrode 23 is by means of the electrically conductive layer 12 in the initial contact phases 16 electrically coupled and electrically contactable.

[0054] Fig. Figure 4 shows a top view of the conventional optoelectronic component. 2 according to Fig. 3. From Fig. 4 shows that the electrically insulating encapsulation layer 5 over almost the entire electrically conductive layer 12 extends and the electrically insulating layer 40together with the electrically conductive layer 12 fully encapsulated.

[0055] The first contact phases 16 of the in the Fig. 3 and Fig. 4 shown first conventional optoelectronic component 2 are significantly smaller than the initial contact sections 16 of the in the Fig. 1 and Fig. 2 shown first conventional optoelectronic component 1 , since the former only exist in the recesses of the electrically insulating encapsulation layer 5 are trained. In addition, the person in the Fig. 3 and Fig. 4 second electrode shown 23 relatively far beyond the sub-area of ​​the electrically conductive layer 12 and the electrically insulating layer 40 extend outwards so that they extend beyond the recesses of the electrically conductive layer 12It can be physically and electrically connected. However, the formation of the recesses themselves requires a certain minimum lateral distance between the recesses and the electrically insulating layer. 40 .

[0056] Fig. Figure 5 shows a side sectional view of an embodiment of an optoelectronic component. 10 The optoelectronic component 10 has an electrically conductive layer 12 on. The electrically conductive layer 12 It exhibits high electrical conductivity. In particular, the electrically conductive layer forms 12 an electrical conductor. The electrically conductive layer 12It can be configured, for example, as a support and / or a substrate. The support can be translucent or transparent. The support or substrate serves as a carrier element for electronic elements or layers, such as light-emitting elements. The support can be made of, for example, plastic, metal, glass, quartz, and / or a semiconductor material. Furthermore, the support can consist of, or be formed from, a plastic film or a laminate with one or more plastic films. The support can be mechanically rigid or mechanically flexible.

[0057] On a portion of the electrically conductive layer 12 is an electrically insulating layer 40 formed. The electrically insulating layer 40 It serves as a planarizing layer and / or as an electrical insulating layer. The electrically insulating layer 40exhibits particularly low electrical conductivity and is, in particular, an electrical insulator.

[0058] Above the electrically insulating layer 40 is a weakly electrically conductive encapsulation layer 24 formed. The electrically weakly conductive encapsulation layer 24 extends across the electrically insulating layer 40 and across the electrically insulating layer 40 outwards directly onto the electrically conductive layer 12 In particular, the electrically weakly conductive encapsulation layer 24 outside the sub-area where the electrically insulating layer 40 is trained to be in direct physical contact with the electrically conductive layer 12 The electrically weakly conductive encapsulation layer 24The layer has a thickness D in the range of 1 nm to 1000 nm, particularly from 10 nm to 150 nm, especially from 25 nm to 75 nm, for example approximately 50 nm. The electrically weakly conductive encapsulation layer 24 exhibits a higher electrical conductivity than the electrically insulating layer 40 and a lower electrical conductivity than the electrically conductive layer 12 The electrically weakly conductive encapsulation layer 24 exhibits a specific resistance in a range of 0.01 Ωm to 10000 Ωm, in particular from 0.1 Ωm to 1000 Ωm, especially from 1 Ωm to 100 Ωm, for example approximately 10 ohms m.

[0059] Above the electrically insulating layer 40 and on the electrically weakly conductive encapsulation layer 24 An optoelectronic layer structure is formed. The optoelectronic layer structure has a first electrode. 20up. The first electrode 20 It can be configured as either an anode or a cathode. The first electrode 20 It can be translucent or transparent. The first electrode 20 It features an electrically conductive material, for example, metal and / or a transparent conductive oxide (TCO), or a stack of multiple layers containing metals or TCOs. The first electrode 20 For example, it can have a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The first electrode 20can alternatively or additionally feature the following materials: networks of metallic nanowires and particles, for example made of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.

[0060] Above the first electrode 20 is an optically functional layered structure, for example an organic functional layered structure 22 , formed by the optoelectronic layer structure. The organic functional layer structure 22 It can, for example, have one, two, or more sublayers. For example, the organic functional layer structure can... 22The device may have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and / or an electron injection layer. The hole injection layer serves to reduce the band gap between the first electrode and the hole transport layer. In the hole transport layer, the hole conductivity is greater than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is greater than the hole conductivity. The electron transport layer serves to transport the electrons. The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Furthermore, the organic functional layer structure can 22 one, two or more functional layer structure units, each comprising the aforementioned sublayers and / or further intermediate layers.

[0061] Above the organic functional layer structure 22 is a second electrode 23 the optoelectronic layer structure is formed. The second electrode 23 can be according to one of the embodiments of the first electrode 20 be trained, with the first electrode 20 and the second electrode 23 They can be formed in the same way or differently. The first electrode 20 It serves, for example, as the anode or cathode of the optoelectronic layer structure. The second electrode 23 Corresponding to the first electrode, the second electrode serves as the cathode and anode of the optoelectronic layer structure. 23 extends across the organic functional layer structure 22 outwards to the electrically weakly conductive encapsulation layer 24 and also beyond the sub-area in which the electrically insulating layer 40is trained. Outside of this sub-area, especially in initial contact phases. 16 , is the second electrode 23 in direct physical contact with the electrically weakly conductive encapsulation layer 24 In the initial contact phases 16 This is therefore the second electrode 23 via the electrically weakly conductive encapsulation layer 24 with the electrically conductive layer 12 coupled.

[0062] A minimum distance A from the first electrode 20 to the second electrode 23 along the electrically weakly conductive encapsulation layer 24 lies in a range of 0.01 mm to 50 mm, in particular from 0.1 mm to 5 mm, in particular from 0.4 mm to 2 mm, for example at approximately 1 mm.

[0063] The relatively small thickness D of the electrically weakly conductive encapsulation layer 24 allows the second electrode23 in the initial contact phases 16 through the electrically weakly conductive encapsulation layer 24 through which good electrical contact is possible, since the small thickness D counteracts the weak electrical conductivity, so that as a result in the thickness direction, i.e. in Fig. 5 in the vertical direction, the electrically weakly conductive encapsulation layer 24 only a slight voltage drop across the electrically weakly conductive layer 24 a sufficiently large current flows from the electrically conductive layer. 12 towards the second electrode 23 is possible.

[0064] In contrast, the relatively large minimum distance A from the first electrode results in 20 to the second electrode 23 along the electrically weakly conductive encapsulation layer 24, that the weak electrical conductivity of the electrically weakly conductive encapsulation layer 24 in this direction, that is, in a lateral direction, that is, in Fig. 5 in the horizontal direction, comes into full effect and only a very small leakage current, which is negligible for many applications, and no significant short circuit occurs.

[0065] For example, in the first contact section 16 approximately a voltage drop of 1.0 mV from the second electrode 23 to the electrically conductive layer 12 and from the first electrode 20 towards the second electrode 23 This results in a leakage current of approximately 6.3 μA, assuming that the optoelectronic component 10 an active area, for example a light surface, of 44.2 cm 2 has the effect that the sum of the contact areas between the second electrode 23and the electrically weakly conductive encapsulation layer 24 in the initial contact phases 16 223.6 mm 2 The electrically weakly conductive encapsulation layer is 24 has a specific resistance of 10 Ωm and a thickness D of 50 nm and thus a contact resistance from the electrode 23 via the electrically weakly conductive encapsulation layer 24 in the area of ​​contact areas 16 to the electrically conductive layer 12 2.2·10 –3 Ω is and that in the operation of the optoelectronic component 10 an operating current density of 10 mA / cm² 2 This means that an operating current of 0.442 A flows and an operating voltage of 5 V is present.

[0066] The optoelectronic layer structure is an electrically and / or optically active region. The active region is, for example, the region of the optoelectronic component. 10, in which electric current is used to operate the optoelectronic component 10 flows and / or in which electromagnetic radiation is generated or absorbed.

[0067] A getter structure (not shown) can be arranged on or above the active area. The getter layer can be translucent, transparent, or opaque. The getter layer can contain or be composed of a material that absorbs and binds substances harmful to the active area.

[0068] Above the second electrode 23 Optionally, an additional encapsulation layer, not shown in the figures, may be added. 24 The optoelectronic layer structure is formed, which encapsulates the optoelectronic layer structure. The electrically weakly conductive encapsulation layer 24and / or the further encapsulation layer can be designed as a barrier layer, for example as a barrier thin film. The encapsulation layers 24 These can also be referred to as thin-film encapsulations. The encapsulation layers 24 They form a barrier against chemical impurities and atmospheric substances, especially water (moisture) and oxygen. The encapsulation layers can be configured as a single layer, a stack of layers, or a layered structure. The encapsulation layers can contain or be composed of: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, polyphenylene terephthalamide, and nylon. 66 , as well as mixtures and alloys thereof, wherein the electrically weakly conductive encapsulation layer 24is electrically weakly conductive and the further encapsulation layer can, for example, be electrically insulating.

[0069] Optionally, a cover (not shown) can be formed over the further encapsulation layer. This cover can, for example, comprise an adhesive layer (not shown) and / or a cover body (not shown). The adhesive layer may, for example, comprise an adhesive, such as a laminating adhesive, a lacquer, and / or a resin. The adhesive layer may, for example, comprise particles that scatter electromagnetic radiation, such as light-scattering particles. The adhesive layer may, for example, serve to attach the cover body to the further encapsulation layer. The cover body may, for example, comprise plastic, glass, and / or metal.For example, the cover body can be made primarily of glass and may have a thin metal layer, such as a metal foil, and / or a graphite layer, such as a graphite laminate, on the glass body. The cover body may serve to protect the optoelectronic component. 10 , for example, against external mechanical forces. Furthermore, the cover body can serve to distribute and / or dissipate heat generated in the optoelectronic component. 10 is generated. For example, the glass of the cover body can serve as protection against external influences, and the metal layer of the cover body can be used to distribute and / or dissipate the emissions generated during the operation of the optoelectronic component. 10 The heat generated is used.

[0070] At the in Fig. In the embodiment shown in section 5, the minimum distance A is determined by the material of the organic functional layer structure, which extends laterally between the first electrode. 20 and the second electrode 23 is trained. Optionally, it can be placed laterally next to the first electrode. 20 and possibly also on the lateral outer edge of the first electrode 20 an electrically insulating insulating material (not shown) is formed in such a way that the space between the first electrode is laterally 20 and the second electrode 23 is wholly or partially filled by the insulating material. If necessary, the minimum distance A is then wholly or partially determined by the insulating material.

[0071] Fig. Figure 6 shows a top view of the optoelectronic component 10 according to Fig. 5. From Fig. 6 shows that the electrically weakly conductive encapsulation layer 24 almost across the entire surface of the electrically conductive layer 12 extends. Optionally, the electrically weakly conductive encapsulation layer can 24 however, across the entire electrically conductive layer 12 extend, which can help to ensure that the electrically weakly conductive encapsulation layer 24 can be manufactured particularly easily, especially across the entire electrically conductive layer. 12 The electrically weakly conductive encapsulation layer 24 encapsulated in conjunction with the electrically conductive layer 12 the electrically insulating layer 40 The first electrode 20 is thus subordinate to the organic functional layer structure 22 and the second electrode 23 it emerged that a second contact section from her 18is formed. The first electrode 20 is by means of the second contact section 18 Electrically contactable.

[0072] Since the optoelectronic component 10 due to the weak, but sufficient, electrical conductivity of the electrically weakly conductive encapsulation layer 24 on the recesses for making the electrical contact of the second electrode 23 The second electrode can be dispensed with. 23 are designed in such a way that they extend only slightly over the sub-area of ​​the electrically conductive layer 12 and the electrically insulating layer 40 extends outwards.

[0073] Fig. Figure 7 shows a side sectional view of an embodiment of an optoelectronic component. 10 , which largely corresponds to the one relating to the Fig. 5 and Fig. This can correspond to the exemplary embodiment described in section 6. In contrast, however, the organic functional layer structure is different. 20 in a lateral direction outwards across the electrically insulating layer 40 pulled outwards, which is why the shortest electrically conductive path starting from the first electrode 20 along the electrically weakly conductive encapsulation layer 24 towards the nearest electrically conductive structure, no longer extending to the second electrode 23 extends, but only as far as the electrically conductive layer 12 In other words, the one belonging to the first electrode 20 along the electrically weakly conductive encapsulation layer 24 the nearest electrically conductive structure is no longer the second electrode 23 but the electrically conductive layer 12Therefore, in this embodiment, the minimum distance A is determined by the distance between the first electrode. 20 and the electrically conductive layer 12 , measured along the electrically weakly conductive encapsulation layer 24 , certainly.

[0074] Fig. Figure 8 shows a flowchart of a process for manufacturing an optoelectronic component, for example the optoelectronic component described above. 10 .

[0075] In step S2, an electrically conductive layer is provided. For example, the electrically conductive layer described above. 12 provided, for example the electrically conductive layer 12 formed. The electrically conductive layer 12 It could be, for example, a metal foil.

[0076] In step S4, an electrically insulating layer is formed. For example, the electrically insulating layer 40 in the sub-area on the electrically conductive layer 12 formed. The electrically insulating layer 40 It may, for example, contain or be formed from plastic, such as a synthetic resin, and / or a varnish. The electrically insulating layer 40 can, for example, be done in a printing process on the electrically conductive layer 12 be trained.

[0077] In step S6, a weakly conductive encapsulation layer is formed. For example, the weakly conductive encapsulation layer 24 designed to extend across the electrically insulating layer 40 and extends beyond that, so that it forms the electrically insulating layer 40in conjunction with the electrically conductive layer 12 encapsulated. Furthermore, the electrically weakly conductive encapsulation layer is 24 designed so that they are located outside the sub-area where the electrically insulating layer 40 is trained to be in direct physical contact with the electrically conductive layer 12 is. Optionally, the electrically weakly conductive encapsulation layer can 24 so that they extend across the entire electrically conductive layer 12 extends.

[0078] In step S8, a first electrode is formed. For example, the first electrode 20 above the sub-area of ​​the electrically conductive layer 12 and above the electrically insulating layer 40 on the electrically weakly conductive encapsulation layer 24 trained.

[0079] In step S10, an organic functional layer structure is formed. For example, the organic functional layer structure 22 on the first electrode 20 trained.

[0080] In step S12, a second electrode is formed. For example, the second electrode 23 formed in such a way that they extend across the organic functional layer structure 22 , the sub-area of ​​the electrically conductive layer 12 and / or the electrically insulating layer 40 extends beyond and that it is in direct physical contact with the electrically weakly conductive encapsulation layer outside the sub-area. 24 is.

[0081] The invention is not limited to the specified embodiments. For example, the electrically conductive layer can be 12 be formed on a carrier or a substrate. QUOTES INCLUDED IN THE DESCRIPTION

[0082] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0083] DE 102009024411 A1

[0010]

Claims

[1] Optoelectronic component ( 10 ), with an electrically conductive layer ( 12 ), an electrically insulating layer ( 40 ), which are located over a portion of the electrically conductive layer ( 12 ) is trained, an electrically weakly conductive encapsulation layer ( 24 ), which are located outside the sub-area on the electrically conductive layer ( 12 ) and over the sub-area on the electrically insulating layer ( 40 ) is trained, a first electrode ( 20 ), which are located above the sub-area on the electrically weakly conductive encapsulation layer ( 24 ) is trained, an organic functional layer structure ( 22 ), which are on the first electrode ( 20 ) is trained, and a second electrode ( 23), which are located above the sub-area on the organic functional layer structure ( 22 ) is formed and is located outside the sub-area on the electrically weakly conductive encapsulation layer ( 24 ) is trained. [2] Optoelectronic component ( 10 ) according to claim 1, wherein the electrically weakly conductive encapsulation layer ( 24 ) has a thickness (D) in a range of 10 nm to 150 nm, in particular from 25 nm to 75 nm, for example approximately 50 nm. [3] Optoelectronic component ( 10 ) according to one of the preceding claims, wherein the electrically weakly conductive encapsulation layer ( 24 ) has a specific resistance in a range from 0.01 Ωm to 10000 Ωm, in particular from 0.1 Ωm to 1000 Ωm, in particular from 1 Ωm to 100 Ωm, for example approximately 10 Ωm. [4] Optoelectronic component ( 10) according to one of the preceding claims, wherein a minimum distance (A) from the first electrode ( 20 ) to the second electrode ( 23 ) or to the electrically conductive layer ( 12 ) along the electrically weakly conductive encapsulation layer ( 24 ) in a range from 0.01 mm to 50 mm, in particular from 0.1 mm to 5 mm, in particular from 0.4 mm to 2 mm, for example at approximately 1 mm. [5] Optoelectronic component ( 10 ) according to one of the foregoing claims, in which the electrically weakly conductive encapsulation layer ( 24 ) above the area in direct physical contact with the electrically insulating layer ( 40 ) is trained, and / or the electrically weakly conductive encapsulation layer ( 24 ) outside the sub-area in direct physical contact with the electrically conductive layer ( 12 ) is trained, and / or the first electrode ( 20 ) in direct physical contact with the electrically weakly conductive encapsulation layer ( 24 ) is trained, and / or the second electrode ( 23 ) in direct physical contact with the electrically weakly conductive encapsulation layer ( 24 ) is trained. [6] Optoelectronic component ( 10 ) according to one of the preceding claims, wherein the electrically weakly conductive encapsulation layer ( 24 ) contains or is formed from aluminium zinc oxide and / or doped aluminium zinc oxide. [7] Optoelectronic component ( 10 ) according to one of the preceding claims, wherein the electrically conductive layer ( 12 ) as a substrate or carrier of the optoelectronic component ( 10 ) is trained. [8] Method for manufacturing an optoelectronic device ( 10 ), in which an electrically conductive layer ( 12 ) is provided, an electrically insulating layer ( 40 ) over a sub-area of ​​the electrically conductive layer ( 12 ) is trained, an electrically weakly conductive encapsulation layer ( 24 ) outside the sub-area on the electrically conductive layer ( 12 ) and over the sub-area on the electrically insulating layer ( 40 ) is trained, a first electrode ( 20 ) over the sub-area on the electrically weakly conductive encapsulation layer ( 24 ) is trained, an organic functional layer structure ( 22 ) on the first electrode ( 20 ) is trained, and a second electrode ( 23 ) over the sub-area on the organic functional layer structure ( 22) is formed and outside the sub-area on the electrically weakly conductive encapsulation layer ( 24 ) is trained. [9] The method of claim 8, wherein the electrically weakly conductive encapsulation layer ( 24 ) is trained in an ALD process. [10] Method according to claim 8 or 9, wherein the electrically weakly conductive encapsulation layer ( 24 ) with a thickness (D) in a range from 1 nm to 1000 nm, in particular from 10 nm to 150 nm, in particular from 25 nm to 75 nm, for example approximately 50 nm [11] Method according to any one of claims 8 to 10, wherein the electrically weakly conductive encapsulation layer ( 24 ) has a specific resistance in a range from 0.01 Ωm to 10000 Ωm, in particular from 0.1 Ωm to 1000 Ωm, in particular from 1 Ωm to 100 Ωm, for example approximately 10 Ωm. [12] Method according to any one of claims 8 to 11, wherein a minimum distance (A) from the first electrode ( 20 ) to the second electrode ( 23 ) or to the electrically conductive layer ( 12 ) along the electrically weakly conductive encapsulation layer ( 24 ) in a range from 0.01 mm to 50 mm, in particular from 0.1 mm to 5 mm, in particular from 0.4 mm to 2 mm, for example at approximately 1 mm. [13] Method according to any one of claims 8 to 12, wherein the electrically weakly conductive encapsulation layer ( 24 ) above the area in direct physical contact with the electrically insulating layer ( 40 ) is trained, and / or the electrically weakly conductive encapsulation layer ( 24 ) outside the sub-area in direct physical contact with the electrically conductive layer ( 12 ) is trained, and / or the first electrode (20 ) in direct physical contact with the electrically weakly conductive encapsulation layer ( 24 ) is trained, and / or the second electrode ( 23 ) in direct physical contact with the electrically weakly conductive encapsulation layer ( 24 ) is trained. [14] Method according to any one of claims 8 to 13, wherein the electrically weakly conductive encapsulation layer ( 24 ) contains or is formed from aluminium zinc oxide and / or doped aluminium zinc oxide. [15] Method according to any one of claims 8 to 14, wherein the electrically conductive layer ( 12 ) as a substrate or carrier of the optoelectronic component ( 10 ) is used.

Images