Organic light-emitting display device and manufacturing process thereof

Abstract

An organic light-emitting display device comprising: a substrate (10); a thin-film transistor layer (20) provided on the substrate (10); a planarizing layer (140) provided on the thin-film transistor layer (20) for planarizing the thin-film transistor layer (20); an anode line (152) provided on the planarizing layer (140) and exposing a region of the planarizing layer (140) in a non-display area (NDA) of the display device, corresponding to a peripheral region outside a display area (DA) of the display device; a wall (155) arranged on the region of the planarizing layer (140) exposed by the anode line (152); an inorganic layer (171) provided on the wall (155) and enclosing a region of the wall (155) in the non-display area (NDA) exposes;and an organic water absorption layer (172) provided on the area of ​​the planarization layer (140) exposed by the anode line (151), and comprising an organic material configured to at least partially absorb outgassing from the planarization layer (140), wherein the organic water absorption layer (172) is provided on the area of ​​the bulge (155) exposed by the inorganic layer (171), wherein the inorganic layer (171) has a second hole (H2) for exposing the area of ​​the bulge (155) in the non-indicator area (NDA), the second hole (H2) being filled by means of the organic water absorption layer (172).

Description

CROSS-REFERENCE TO RELATED REGISTRATIONS

[0001] The present application claims priority over Korean patent application No. 10-2014-0154512, filed on November 7, 2014, which is hereby incorporated in its entirety by reference. BACKGROUND OF THE INVENTION Area of ​​the invention

[0002] The present invention relates to an organic light-emitting display device and a manufacturing method thereof. Description of related technology

[0003] With the advancement of the information society, the demand for display devices for showing images has increased in various ways. Recently, various flat panel display devices, such as liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light-emitting displays, have been used.

[0004] Among display devices, the organic light-emitting display (OLED) stands out from LCDs in terms of viewing angle, contrast ratio, etc. It can be manufactured with low weight and a thin profile, and is advantageous in terms of energy consumption since it does not require a separate backlight. The OLED also offers advantages in terms of low-voltage DC drive, short response time, and, in particular, low manufacturing costs.

[0005] The organic light-emitting display device is manufactured using several processes, including the formation of a thin-film transistor layer on a substrate, the formation of a planar layer to flatten the surface of the thin-film transistor layer, and the formation of an organic light-emitting diode layer on the planar layer. The organic light-emitting diode comprises an anode electrode (e.g., an anode), an organic light-emitting layer, and a cathode electrode (e.g., a cathode). An encapsulation layer, consisting of multilayer organic and inorganic components, is formed on the organic light-emitting diode layer to protect the organic light-emitting diode and the cathode from oxygen and water.

[0006] The planarization layer can be made of a resin, such as photoacrylic or polyimide. Since the planarization layer absorbs water when exposed to the atmosphere, water is removed within a vacuum deposition apparatus before the substrate, containing the thin-film transistor layer, is introduced into the apparatus during the planarization layer deposition process. However, despite these efforts, water may remain in the planarization layer. For example, if water is present in a small amount (150 ppm) in the planarization layer, the organic light-emitting diode or the cathode may be damaged by gas release from the planarization layer (e.g., outgassing or degassing generated within the planarization layer).In this case, the problem can occur that pixels whose organic light-emitting diode or cathode is damaged due to water are displayed as a black spot. SUMMARY OF THE INVENTION

[0007] Accordingly, the present invention relates to an organic light-emitting display device and a manufacturing method thereof, which essentially prevents one or more problems due to limitations and disadvantages of the related technology.

[0008] An advantage of the present invention is to provide an organic light-emitting display device and a manufacturing method thereof in which it can be prevented that an organic light-emitting diode or a cathode is damaged by outgassing caused by water remaining in a planarization layer.

[0009] Additional advantages and features of the invention are disclosed in the following description and are apparent to the person skilled in the art from studying the following or can be learned through application of the invention. The objectives and other advantages of the invention can be realized and achieved by means of the structures particularly highlighted in the description and the resulting claims as well as the attached drawings.

[0010] To achieve these objectives and other advantages, and in accordance with the objective of the invention as set out and described in detail herein, an organic light-emitting display device according to various embodiments of the present invention comprises: a substrate; a thin-film transistor layer provided on the substrate; a planarizing layer provided on the thin-film transistor layer for planarizing (for example, flattening) the thin-film transistor layer; an anode line provided on the planarizing layer which exposes (in other words, does not cover) an area of ​​the planarizing layer in a non-display area of ​​the display device corresponding to a peripheral area outside a display area of ​​the display device;and an organic water absorption layer (for example, an organic layer for absorbing water or an organic layer for water absorption) provided on the area of ​​the planarization layer exposed (not covered) by the anode conductor, comprising an organic material designed (in other words, configured) to absorb at least some outgassing from the planarization layer.

[0011] In one or more embodiments, the organic light-emitting display device further comprises: a wall (or dam or bank) arranged from the area of ​​the planarization layer exposed by the anode lead, the wall having a hole that exposes a sub-area (or sub-area) of the area of ​​the planarization layer exposed by the anode lead, and the organic water absorption layer filling the hole for contacting said sub-area. For example, the organic water absorption layer can be in direct mechanical contact with the planarization layer by means of the hole in the wall (e.g., through the hole in the wall).

[0012] In one or more embodiments, the organic light-emitting display device further comprises: a ridge arranged on the area of ​​the planarization layer exposed by the anode lead; an inorganic layer provided on the ridge, exposing an area of ​​the ridge in the non-display area, wherein the organic water absorption layer is provided on the area of ​​the ridge exposed by the inorganic layer. The organic water absorption layer may be in direct mechanical contact with the area of ​​the ridge exposed by the inorganic layer.

[0013] In one or more embodiments, the area of ​​the wall exposed by the inorganic layer overlaps at least partially the area of ​​the planarization layer exposed by the anode conductor.

[0014] In one or more embodiments, the anode conductor has a first hole for exposing the area of ​​the planarization layer in the non-display area, wherein the first hole is filled by the wall (in other words, the wall fills the first hole). The wall may be in direct physical contact with the area of ​​the planarization layer exposed by the first hole.

[0015] In one or more embodiments, the inorganic layer has a second hole for exposing the area of ​​the wall in the non-display area, wherein the second hole is filled by the organic water-absorbing layer (in other words, the organic water-absorbing layer fills the second hole). The organic water-absorbing layer may be in direct physical contact with the area of ​​the wall exposed by the second hole.

[0016] In one or more embodiments, the organic water absorption layer is in direct mechanical contact with the area of ​​the planarization layer that is exposed by the anode conductor.

[0017] In one or more embodiments, the organic water absorption layer comprises an epoxy resin and an organometallic complex, wherein a ratio (e.g. mass ratio) between the epoxy resin and the organometallic complex is preferably 9:1.

[0018] In one or more embodiments, the organic water absorption layer is provided in the display area and the non-display area.

[0019] In one or more embodiments, the organic water absorption layer is provided only in the non-display area. The organic light-emitting display device may further comprise a transparent (e.g., see-through) organic layer provided in the display area adjacent to the organic water absorption layer. The organic water absorption layer may have a water absorption capacity (e.g., water uptake capacity) that is higher than that of the see-through organic layer. The see-through organic layer may comprise at least one of the following: epoxy, acrylate, urethane acrylate, polyurea, polyacrylate, perylene tetracarboxylic acid dianhydride (PTCDA), biphenyl tetracarboxylic acid dianhydride (BPDA), or pyromellitic acid dianhydride (PMDA).

[0020] A method for manufacturing an organic light-emitting display device may, in accordance with various embodiments, comprise: forming a thin-film transistor layer on a substrate; forming a planarization layer on the thin-film transistor layer for planarizing (e.g., flattening) the thin-film transistor layer; forming an anode conductor on the planarization layer, which exposes a region of the planarization layer in a non-display area of ​​the display device corresponding to a peripheral area outside a display area of ​​the display device; and forming an organic water absorption layer on the region of the planarization layer exposed by the anode conductor, wherein the organic water absorption layer comprises an organic material intended to absorb at least partial outgassing from the planarization layer.

[0021] In one or more embodiments, the method further comprises: forming a ridge on the area of ​​the planarization layer exposed by the anode conductor; and forming an inorganic layer on the ridge, exposing a portion of the ridge in the non-display area; wherein the organic water absorption layer is formed on the portion of the ridge exposed by the inorganic layer. Forming the anode conductor on the planarization layer may include forming a first hole in the anode conductor to expose the portion of the planarization layer in the non-display area after forming the anode conductor on the planarization layer, and forming the ridge on the portion of the planarization layer exposed by the anode conductor may include filling the first hole with the ridge.Forming the inorganic layer on the wall can involve forming a second hole in the wall to expose the area of ​​the wall in the non-display area after forming the inorganic layer on the wall, and forming the organic water absorption layer on the area of ​​the wall exposed by the inorganic layer can involve filling the second hole with the organic water absorption layer.

[0022] In one or more embodiments, the method may further include the formation of the organic water absorption layer in the display area and the non-display area.

[0023] In one or more embodiments, the method may further include: forming the organic water absorption layer only in the non-display area. In this case, the method may further include forming a transparent (e.g., see-through) organic layer in the display area adjacent to the organic water absorption layer. The organic water absorption layer may have a water absorption capacity that is higher than that of the transparent organic layer.

[0024] In one or more embodiments, the organic water absorption layer comprises an epoxy resin and an organometallic complex. The ratio between the epoxy resin and the organometallic complex can be 9:1.

[0025] In accordance with a further aspect of the present invention, an organic light-emitting display device may comprise: a lower substrate; a thin-film transistor layer provided on the lower substrate; a planarizing layer provided on the thin-film transistor layer for planing the thin-film transistor layer; an anode line provided on the planarizing layer such that the planarizing layer is partially exposed in a non-display area corresponding to a peripheral area of ​​a display area; a wall provided on the partially exposed planarizing layer; an inorganic layer provided on the wall such that the wall is partially exposed; and an organic water absorption layer provided on the partially exposed wall.

[0026] The organic water absorption layer may contain an organic material that has a water absorption capacity to absorb outgassings generated by the planarization layer.

[0027] The organic water absorption layer may contain an epoxy resin and an organometallic complex.

[0028] A first hole for exposing the planarization layer by passing through part of the anode conductor can be provided in the non-display area, and the wall can be provided on the planarization layer exposed by the first hole.

[0029] A second hole for exposing the wall by passing through part of the first inorganic layer may be provided in the non-display area, and the organic water absorption layer may be provided on the wall exposed by means of the second hole.

[0030] The organic water absorption layer can be provided in the display area and the non-display area.

[0031] The organic water absorption layer can only be provided in the non-display area.

[0032] The organic light-emitting display device may further comprise a transparent (e.g., transparent) organic layer provided on the first inorganic layer in the display area.

[0033] In a further aspect of the present invention, a method for manufacturing an organic light-emitting display device can comprise the steps of: forming a thin-film transistor layer on a lower substrate; forming a planarization layer on the thin-film transistor layer to flatten (e.g., planarize) the thin-film transistor layer; forming an anode conductor on the planarization layer such that the planarization layer is partially exposed in a non-display area corresponding to a peripheral area (e.g., an outer area) of a display area; forming a ridge on the partially exposed planarization layer; forming a first inorganic layer on the ridge such that the ridge is partially exposed; and forming an organic water absorption layer on the partially exposed ridge.

[0034] The organic water absorption layer may contain an organic material that has a water absorption capacity to absorb outgassings generated by the planarization layer.

[0035] The organic water absorption layer may contain an epoxy resin and an organometallic complex.

[0036] The step of forming an anode conductor on the planarization layer may include forming a first hole to expose the planarization layer by partially passing through the anode conductor after forming the anode conductor on the planarization layer, and the step of forming a bulge on the partially exposed planarization layer may include forming the bulge on the planarization layer exposed by means of the first hole.

[0037] The step of forming a first inorganic layer on the embankment may include forming a second hole to expose the embankment by partially passing through the first inorganic layer after the formation of the first inorganic layer on the embankment, and the step of forming an organic water absorption layer on the embankment, which is partially exposed, may include forming the organic water absorption layer on the embankment, which is exposed by means of the second hole.

[0038] The step of forming an organic water absorption layer on the partially exposed wall can involve the formation of the organic water absorption layer in both the displayed and non-displayed areas. Alternatively, the step of forming an organic water absorption layer on the partially exposed wall can involve the formation of the organic water absorption layer only in the non-displayed area.

[0039] The process may further include the step of forming a transparent organic layer on the first inorganic layer in the display area.

[0040] It should be noted that both the preceding general description and the following detailed description of the present invention are exemplary and illustrative, and are intended to provide further explanations of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The accompanying drawings, which are included to provide a deeper understanding of the invention and which are incorporated into and form part of this description, illustrate embodiments of the invention and, together with the description, serve to explain the principle of the invention. They show:

[0042] Fig. 1 an exemplary view briefly illustrating an organic light-emitting display device according to an embodiment of the present invention;

[0043] Fig. 2 a cross-sectional view showing an organic light-emitting display device according to an embodiment of the present invention;

[0044] Fig. 3 An exemplary detailed view showing an organic light-emitting layer of the Fig. 2 represents;

[0045] Fig. 4 a flowchart illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of the present invention;

[0046] Fig. 5A to Fig. 5I Cross-sectional views illustrating a method for manufacturing an organic light-emitting display device according to the embodiment of the present invention; and

[0047] Fig. 6 a cross-sectional view showing an organic light-emitting display device according to a further embodiment of the present invention;

[0048] Fig. 7 a flowchart illustrating a method for manufacturing an organic light-emitting display device according to a further embodiment of the present invention; and

[0049] Fig. 8A to Fig. 8K cross-sectional views illustrating a method for manufacturing an organic light-emitting display device according to a further embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0050] Reference will now be made in detail to the preferred embodiments, examples of which are shown in the accompanying drawings. Where possible, the same reference symbols are used to identify identical or similar parts in all drawings. In the following description of the present invention, a detailed description is omitted if a detailed description of elements or functions known with respect to the present invention would unnecessarily obscure the subject matter of the present invention. Likewise, designations of elements used in the following description may be chosen to facilitate the drafting of the description and may differ from the designations of parts of the actual product.

[0051] Fig. Figure 1 shows an exemplary view, briefly illustrating an organic light-emitting display device according to one embodiment of the present invention. Fig. Figure 1 shows a cross-sectional view of one side of an organic light-emitting display device according to the embodiment of the present invention for the sake of simplicity. Referring to Fig. 1 The organic light-emitting display device according to the embodiment of the present invention has a lower substrate 10 , a thin-film transistor layer 20 , an organic light-emitting diode layer 30 , an encapsulation layer 40 , an adhesive layer 50 and an upper substrate 60 on.

[0052] The lower substrate 10It can be made of glass or plastic. If the organic light-emitting display device according to the embodiment of the present invention is designed as a flexible display device, the lower substrate can be 10 It may be curved (for example, bendable) and can be made of a material that has a high restoring force.

[0053] The thin-film transistor layer 20 is on the lower substrate 10 provided. The thin-film transistor layer 20 It features gate lines, data lines, and thin-film transistors. Each of the thin-film transistors has a gate electrode, a semiconductor layer, and source and drain electrodes, as shown in Fig. 2 and Fig. Figure 6 shows that if a gate driver circuit is implemented as a gate driver in panel (GIP) type, the thin-film transistor layer 20be provided in a display area (DA) and a non-display area (NDA), as shown in Fig. 1 shown. Alternatively, the thin-film transistor layer can be used. 20 only be provided in the display area (DA) if the gate control circuit is packaged in a tape carrier package (TCP) and the gate TCP is attached to the non-display area (NDA).

[0054] The organic light-emitting diode layer 30 is on the thin-film transistor layer 20 Provided. The organic light-emitting diode layer. 30 It features anode electrodes (e.g., anodes), anode conductors, organic light-emitting layers, a cathode electrode (e.g., a cathode), and walls, as shown in Fig. 2 and Fig. Figure 6 shows that each of the organic light-emitting layers can have a hole transport layer, a light-emitting layer, and an electron transport layer, as shown in Figure 6. Fig. Figure 3 illustrates this. In this case, when a voltage is applied to both the anode and the cathode, holes and electrons are moved through the hole transport layer and the electron transport layer, respectively, to the light-emitting layer and recombine with each other in the light-emitting layer, thus emitting light. Fig. 1 is the area where the organic light-emitting diode layer is located. 30 The area provided is referred to as the display area (DA) (for example, defined), and a peripheral area outside the display area (DA) (for example, a remaining area outside the display area) is referred to as the non-display area (NDA) (for example, defined).

[0055] The encapsulation layer 40 is on the organic light-emitting diode layer 30 provided. The encapsulation layer 40 It serves to prevent the penetration of oxygen or water into the organic light-emitting diode layer. 30 to prevent it from getting in. The encapsulation layer 40 It has at least one organic layer and at least one inorganic layer. For example, the encapsulation layer can be... 40 exhibit a first inorganic layer, an organic water absorption layer, and a second inorganic layer, as shown in Fig. 2 and Fig. Figure 6 shows that the organic water absorption layer may contain an organic material that has water absorption properties (in other words, an organic material that absorbs water, or an organic material with water absorption capacity).

[0056] The adhesive layer (for example, the adhesion layer) 50is a transparent (for example, see-through) adhesive layer 50 , which are on the encapsulation layer 40 is provided. The transparent adhesive layer 50 connects the lower substrate 10 , which is related to the thin-film transistor layer 20 , the organic light-emitting diode layer 30 and the encapsulation layer 40 is provided, with the upper substrate 60 The transparent adhesive layer 50 It can be an optically clear resin (OCR) layer or an optically clear adhesive (OCA) layer. If the adhesive layer is transparent... 50 If an OCA layer is used, it is preferable to have a predefined planarization layer additionally on the encapsulation layer. 40 for a firmer bonding of the upper substrate 60 with the lower substrate 10is provided, and then with the upper substrate 60 is bonded. That is, in this case, the adhesive layer can 50 (OCA layer) between the planarization layer and the upper substrate 60 be arranged.

[0057] The upper substrate 60 It serves as a covering substrate (for example, a housing substrate) or a covering window that protects the lower substrate. 10 covers. The upper substrate 60 It can be made of glass or plastic.

[0058] Fig. Figure 2 shows a cross-sectional view representing an organic light-emitting display device according to an embodiment of the present invention. The display area DA and the non-display area NDA are shown in Fig. 2 partially shown.

[0059] Referring to Fig. 2 is the thin-film transistor layer 20 on the lower substrate 10provided. The thin-film transistor layer 20 features gate lines (not shown), data lines (not shown), thin-film transistors 110 , a gate-insulating layer 120 and an intermediate insulating layer 130 on. Although it is in Fig. 2 is represented such that the thin-film transistors 110 formed as a top-gate type, in which a gate electrode is arranged on a semiconductor layer, it should be noted that the present invention does not refer to the example from Fig. 2 is limited. That is, the thin-film transistors 110 They can be designed as a bottom-gate type, in which a gate electrode is located beneath a semiconductor layer. Each of the thin-film transistors 110 has a semiconductor layer 111 , a gate electrode 112 , a source electrode 113 and a drain electrode 114 up, as in Fig. 2 shown.

[0060] The semiconductor layers 111 are on the lower substrate 10 A buffer layer (not shown) can be provided between the lower substrate. 10 and the semiconductor layers 111 be arranged. The gate-insulating layer 120 can occur on the semiconductor layers 111 be provided. The gate electrodes 112 can occur on the gate insulating layer 120 be provided. The intermediate insulating layer 130 can be applied to the gate electrodes 112 be provided. The source electrodes 113 and the drain electrodes 114 can be located on the intermediate-insulating layer 130 Each of the source electrodes must be provided. 113 and the drain electrodes 114 can be used with the semiconductor layer 111 through a contact hole that passes through the intermediate insulating layer130 and the gate insulating layer 120 through, with the semiconductor layer 111 be connected.

[0061] The planarization layer 140 is on the thin-film transistor layer 20 provided. More precisely, if the organic light-emitting display device is designed as a top-emission type, the planarization layer is 140 on the thin-film transistor layer 20 arranged in such a way that by means of walls 155 Pixels P are arranged separately with planarization.

[0062] The planarization layer 140 It can be formed from a resin, such as photoacrylic and polyimide. In this case, since the planarization layer 140 Water is absorbed when the planarization layer 140The substrate is exposed to the atmosphere, water is removed within a vacuum deposition device before the substrate is used to deposit the planarization layer. 140 on the thin-film transistor layer 20 is introduced into the vacuum deposition device.

[0063] The organic light-emitting diode layer 30 is on the planarization layer 140 Provided. The organic light-emitting diode layer. 30 features anode electrodes (for example, anodes) 151 , an anode line 152 , organic light-emitting layers 153 , a cathode electrode (for example, a cathode) 154 and ramparts 155 up. The anodes 151 and the organic light-emitting layers 153 can be provided in the DA display area, and the anode line 152 , the cathode 154 and the ramparts 155They can be provided in the display area DA and the non-display area NDA.

[0064] The anodes 151 are on the planarization layer 140 provided. Each of the anodes 151 is connected to the drain electrode 140 connected through a contact hole that passes through the planarization layer 140 leads through it.

[0065] The anode line is also 152 on the planarization layer 140 provided. The anode line 152 It can be a power supply line for providing a power supply voltage or a control voltage line for providing a control voltage to the gate control circuit. For example, the anode line can be... 152 a cathode power supply line, which has a source-drain structure 160 and the cathode 154connected to supplying a cathode voltage (e.g., provided by a cathode voltage source), as in Fig. 2. The source-drain structure. 160 is from the planarization layer 140 exposed to the outside (in other words, at least part of the source-drain structure) 160 is not from the planarization layer 140 covered), and the power supply voltage or the control voltage can be the source-drain structure 160 be supplied.

[0066] The organic light-emitting layers 153 are on the anodes 151 , which are located in the DA display area between the walls 155 are exposed (in other words, not removed from the walls) 155 are covered), provided. Since each of the walls 155 is higher than any of the organic light-emitting layers 153 , are the organic light-emitting layers 153by means of the walls 155 separated from each other. That is, each of the organic light-emitting layers. 153 is between the walls 155 arranged. Meanwhile, an area that lies between the walls can be 155 exposed anode 151 , which are on the anode 151 provided organic light-emitting layer 153 and the thin-film transistor 110 , whose drain electrode 140 with the anode 151 is connected as a pixel P defined as in Fig. 2 shown.

[0067] Each of the organic light-emitting layers 153 can a perforated transport layer 153a , a light-emitting layer 153b and an electron transport layer 153c exhibit, as in Fig. 3 shown. In this case, when a voltage is applied to the anode 151 and the cathode 154is created, holes and electrons pass through the hole transport layer 153a or the electron transport layer 153c through to the light-emitting layer 153b move and recombine in this way within the light-emitting layer 153b together, so that light is emitted.

[0068] The cathode 154 is on the organic light-emitting layers 153 and the ramparts 155 in the display area DA such that they are arranged the organic light-emitting layers 153 and the ramparts 155 covered. The cathode 154 can be found on the area between the walls 155 exposed anode conductor 152 The NDA will be provided in the non-display area.

[0069] Meanwhile, the anode line 152 designed to create the planarization layer 140 to partially uncover the NBA non-display area, and the wall 155is provided on the partially exposed planar layer. In other words, the wall can 155 on an exposed area of ​​the planarization layer 140 be formed. Put another way, the wall can 155 on an area of ​​the planarization layer 140 be formed, which is not from the anode line 152 is covered. Since the anode line 152 The non-display area (NDA) is a line for connecting a predefined line, for example, the source-drain structure. 160 , with the cathode 154 The anode line should be... 152 , as in Fig. 5C shown, on the planarization layer 140 be provided. However, in the embodiment of the present invention, a path for outgassing from the planarization layer is provided. 140 a first hole H1 to expose the planarization layer 140provided so that the anode line 152 is partially breached. As a result, the wall can 155 on the planarization layer exposed by means of the first hole H1 140 be provided. In other words, a first hole H1 can be provided within the planarization layer. 140 exposing anode conductor 152 be educated, and the wall 155 can occur in the area of ​​the planarization layer 140 It may be formed by means of the first hole H1, which is exposed. For example, the wall can be 155 Fill the first hole H1 (e.g., fill it up).

[0070] The encapsulation layer 40 is on the organic light-emitting diode layer 30 provided. The encapsulation layer 40 This serves to prevent oxygen or water from entering the organic light-emitting diode layer. 30 penetrates. For this purpose, the encapsulation layer can be used.40 a first inorganic layer 171 , an organic water absorption layer 172 and a second inorganic layer 173 exhibit.

[0071] The first inorganic layer 171 is on the cathode 154 provided in such a way that they form the cathode 154 covered. The organic water absorption layer 172 is on the first inorganic layer 171 provided to prevent particles from entering the organic light-emitting layer 153 and the cathode 154 penetrate (for example, permeate) by passing through the first inorganic layer 171 penetrate it. The second inorganic layer 173 is thus located on the organic water absorption layer 172 provided that they form the organic water absorption layer 172 covered.

[0072] Each of the first inorganic layers 171and the second inorganic layer 173 It can be formed from a nitride material or an oxide material, for example silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide. For example, each of the first inorganic layers can be 171 and the second inorganic layer 173 be formed from any of SiO2, Al2O3, SiON and SiNx.

[0073] When the water absorption layer 172 The water absorption layer is provided in the display area DA and the non-display area NDA. 172 be formed from a transparent (e.g., see-through) and water-absorbing (e.g., water-absorbing) organic layer in such a way that light emitted by the organic light-emitting layers 153The DA range emitted from the display area can pass through it (for example, through the organic water absorption layer). 172 The compound comprises an epoxy resin and an organometallic complex. Preferably, the ratio of the epoxy resin to the organometallic complex can be such that it is present in the organic water absorption layer. 172 The ratio of epoxy resin to organometallic complex is 9:1, but is not limited to this. The ratio of epoxy resin to organometallic complex is a weight percent (wt%) ratio (for example, the ratio of the weight percent (wt%) to each other). This is the ratio of epoxy resin to organometallic complex, which is present in the organic water absorption layer. 172 The elements included can be modified by the expert within the design scope, which can be altered.

[0074] Meanwhile, the first inorganic layer 171 intended to be the wall155 to partially uncover the layer on which the planarization layer is located. 140 is provided, which is exposed by means of the first hole H1 in the non-display area NDA, and the organic water absorption layer. 172 can be found on the partially exposed rampart 155 be provided. In other words, the organic water absorption layer can be 172 on a section of the wall 155 be formed that is not from the first inorganic layer 171 is covered. Since the first inorganic layer 171 a layer to protect the organic light-emitting layer 153 and the cathode 154 The first inorganic layer should be protected from oxygen and water. 171 be provided in such a way that they can breach the wall 155 The non-display area is covered by an NDA, as shown in Fig. 5H is shown. However, in the embodiment of the present invention, in order to create a path for outgassing of the planarization layer, 140 to provide a second hole H2 to expose the wall 155 in the non-display area NDA by means of partial pass-through through the first inorganic layer 171 provided. As a result, the organic water absorption layer can be 172 on the wall 155 It is provided by means of the second hole H2, which is exposed in the non-display area (NDA). In other words, a second hole H2 can be located within the first inorganic layer. 171 be educated, that the wall 155 exposes, and the organic water-adoption layer 172 can be found in the area of ​​the wall 155 , which is exposed via the second hole H2. For example, the organic water absorption layer can be formed. 172Fill the second hole H2 (e.g. fill it out).

[0075] The transparent (e.g., see-through) adhesive layer (e.g., adhesion layer) 50 is on the encapsulation layer 40 provided. The transparent adhesive layer 50 binds the lower substrate 10 , which is related to the thin-film transistor layer 20 , the organic light-emitting diode layer 30 and the encapsulation layer 40 is provided, with the upper substrate 60 .

[0076] As described above, according to the embodiment of the present invention, the anode line 152 in the non-display area NDA provided in such a way that it includes the planarization layer 140 partially exposes the first inorganic layer 171 is provided in such a way that it forms the wall 155 partially exposed, which is located on the partially exposed planarization layer140 is provided, and the organic water absorption layer 172 is on the partially exposed rampart 155 provided. As a result, in the embodiment of the present invention, a path can be provided, as indicated by the arrows in Fig. 2 shows how outgassing occurs through the planarization layer 140 (for example, in the planarization layer) 140 ) are generated, in such a way as to form the organic water absorption layer 172 can be directed (for example, transferred) so that the outgassing from the organic water absorption layer 172 can be absorbed when water is present in the planarization layer 140This prevents, in the embodiment of the present invention, the organic light-emitting diode or the cathode from being damaged by outgassings generated by water remaining in the planarization layer.

[0077] In the Fig. In the embodiment shown in 2, the wall 155 between the planarization layer 140 and the organic water absorption layer 172 arranged. However, it should be noted that in accordance with one or more embodiments of the wall 155 not between the planarization layer 140 and the organic water absorption layer 172 must be arranged. For example, one or more other layers can be placed between the planarization layer. 140 and the organic water absorption layer 172 instead of the wall 155be arranged, for example, as long as the organic water absorption layer 172 Outgassing occurring in the planarization layer 140 can be generated (e.g., arise) and can at least partially absorb.

[0078] Likewise, in one or more embodiments, one or more other layers can be placed between the planarization layer. 140 and the organic water absorption layer 172 in addition to the wall 155 be arranged. Likewise, in one or more embodiments, the wall can 155 have an opening (for example, a hole), and the organic water absorption layer 172 can fill the opening in such a way that it covers the planarization layer 140 The opening (or hole) can expose a sub-area of ​​the planarization layer area connected to the anode conductor. 152is exposed, and the organic water absorption layer can fill the hole in such a way that the aforementioned sub-area is contacted. For example, the organic water absorption layer can pass through the hole in the wall. 155 through in direct mechanical (e.g., physical) contact with the planarization layer 140 stand.

[0079] Likewise, in one or more embodiments of the wall 155 can be omitted, and the organic water absorption layer can be in direct mechanical (e.g., physical) contact with the planarization layer. 140 stand.

[0080] In simpler terms, the organic water absorption layer can be configured according to various embodiments. 172 as a moisture-absorbing layer above the planarization layer 140 be provided and may be intended to be from the planarization layer140 to absorb at least some of the generated moisture. For this purpose, the layer arrangement, which includes the planarization layer, can be used. 140 and the organic water absorption layer 172 (and possibly one or more other layers, such as the wall) 155 , the first inorganic layer 171 or other) is provided to ensure that a moisture-transporting path leading from the planarization layer 140 (i.e., the moisture-generating layer) to the organic water-absorption layer 172 (that is, the moisture-absorbing layer) is provided.

[0081] Fig. Figure 4 shows a flowchart illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of the present invention. Fig. 5A to Fig. Figure 5I are cross-sectional views illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of the present invention. The method for manufacturing an organic light-emitting display device according to an embodiment of the present invention is described below with reference to Fig. 5A to Fig. 5I will be described in detail.

[0082] First, the thin-film transistor layer is applied. 20 on the lower substrate 10 formed, as in Fig. 5A is shown. The lower substrate 10 It can be made of glass or plastic. The thin-film transistor layer 20 features gate lines (not shown), data lines (not shown), thin-film transistors 110 , a gate-insulating layer 120 and an intermediate insulating layer 130 on. Although in Fig. Figure 5A shows that the thin-film transistors 110 are formed as a top-gate type, in which a gate electrode 112 on a semiconductor layer 111 It should be noted that the present invention is not based on the example of Fig. It is limited to 5A. This means that the thin-film transistors 110 They can be formed as a bottom-gate type, in which a gate electrode is located beneath a semiconductor layer. Thin-film transistors 110 are formed in the DA display area.

[0083] The semiconductor layers 111 are on the lower substrate 10 formed. Alternatively, the semiconductor layers can be 111 , after a buffer layer (not shown) on the lower substrate 10 is formed on the buffer layer. The gate-insulating layer 120 is applied to the semiconductor layers 111formed. The gate-insulating layer 120 is intended to the semiconductor layers 111 to insulate from other conductive materials (e.g., metals). In particular, the gate insulating layer 120 intended to be the semiconductor layers 111 from the gate electrodes 112 (for example, metallic gates) to insulate the gate electrodes. 112 are located on the gate insulating layer 120 formed. The intermediate layer-insulating layer 130 is applied to the gate electrodes 112 formed. The source electrodes 113 and the drain electrodes 114 are located on the intermediate insulating layer 130 formed. Before the source electrodes 113 and the drain electrodes 114 Contact holes can be formed to expose the semiconductor layers. 111by passing (the contact holes) through the gate insulating layer 120 and the intermediate insulating layer 130 For this reason, each of the source electrodes can 113 and the drain electrodes 114 with the semiconductor layers 111 through the contact hole that passes through the gate insulating layer 120 and the intermediate insulating layer 130 through, be connected (step S101 of the Fig. 4).

[0084] Secondly, as in Fig. 5B shows the planarization layer. 140 on the thin-film transistor layer 20 formed. If the organic light-emitting display device is formed as a top-emission type, the planarization layer is 140 intended to be pixel P, which is accessed via the walls 155to arrange them separately from each other in a planarized manner (for example, flattened, in a planarized state, in a flattened state). The planarization layer 140 It can be formed from a resin, such as photoacrylic and polyimide. In this case, it is preferable that, if the planarization layer 140 is exposed to the atmosphere, as the planarization layer 140 Water is absorbed; the water is removed within a vacuum deposition device before the substrate is placed in the vacuum deposition device for depositing the planarization layer. 140 on the thin-film transistor layer 20 is spent (step S102 of the Fig. 4).

[0085] Thirdly, as in Fig. 5C shows the anode electrodes (for example, the anodes) 151 and the anode line 152 on the planarization layer 140formed. Before the anodes 151 Contact holes can be formed to expose the drain electrodes. 114 by passing (the contact holes) through the planarization layer 140 For this reason, each of the anodes can 151 with the drain electrode 114 through the contact hole to pass through the planarization layer 140 through which they are connected.

[0086] The anode line 152 This can be a power line for supplying a supply voltage or a control voltage line for supplying a control voltage to the gate control circuit. For example, if the supply voltage or the control voltage of the source-drain structure 160 in Fig. 5C is supplied to the anode line 152 with a predefined source-drain structure 160be connected, which extend outwards from the planarization layer 140 is exposed (in other words, at least part of the source-drain structure) 160 is not from the planarization layer 140 covered).

[0087] Meanwhile, the anode line provided in the non-display area (NDA) can 152 be formed in such a way that they form the planarization layer 140 partially exposed, as in Fig. 5D representation. More precisely, the first hole H1, which is provided by the anode line in the non-display area (NDA), is shown. 152 through which it is formed. For this reason, the planarization layer is formed. 140 exposed through the first hole H1 (steps S103 and S104 of the Fig. 4).

[0088] Fourthly, as in Fig. 5E shows the organic light-emitting layers 153 , the cathode electrode (for example, the cathode)154 and the ramparts 155 formed. The organic light-emitting layers 153 are applied to the anode 151 , which are between the walls 155 in the display area DA is exposed, formed. The cathode 154 is located on the organic light-emitting layers 153 and the ramparts 155 in the display area DA such that they form the organic light-emitting layers 153 and the ramparts 155 covered. The cathode 154 can occur on the anode line 152 are formed between the walls 155 The NDA is exposed in the non-display area (step S105). Fig. 4).

[0089] As the fifth, as in Fig. 5F is shown, the first inorganic layer 171 on the cathode 154 of the DA display area and the wall 155 The non-display area NDA was formed. The first inorganic layer 171can be formed from a nitride material or an oxide material, for example silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide.

[0090] Meanwhile, the first inorganic layer can 171 , which is provided in the non-display area NDA, are formed in such a way that they block the wall 155 partially exposed, which is located on the planarization layer exposed by means of the first hole H1 140 is provided as in Fig. 5G is depicted. More precisely, the second hole H2, which is provided by the first inorganic layer in the non-display area NDA, is shown. 171 through which it is formed. For example, the second hole H2 can be found in the first inorganic layer. 171 by structuring the first inorganic layer 171 be formed. The wall 155is exposed through the second hole H2 (steps S106 and S107 of the Fig. 4).

[0091] As the sixth, as in Fig. 5H is shown, the organic water absorption layer. 172 on the first inorganic layer 171 Formed in the DA display area. The organic water absorption layer. 172 is applied to the first inorganic layer 171 formed to prevent particles from entering the organic light-emitting layer 153 and the cathode 154 penetrate by passing through the first inorganic layer 171 pass through.

[0092] When the organic water absorption layer 172 The water absorption layer is provided in the display area DA and the non-display area NDA. 172are formed from a transparent (e.g., see-through) and water-absorbing (e.g., water-absorbing) organic layer in such a way that the organic light-emitting layers 153 Light emitted from the display area DA can pass through. For example, the organic water absorption layer can 172 The material contains an epoxy resin and an organometallic complex. The ratio of the epoxy resin to the organometallic complex is determined by the organic water absorption layer. 172 The ratio of the epoxy resin to the organometallic complex contained in the organic water absorption layer is preferably 9:1, but is not limited to this. 172 The elements included can be modified by a professional within the design scope that can be altered.

[0093] Likewise, as in Fig. 5H is shown, the organic water absorption layer. 172 on the wall exposed through the second hole H2 155 formed. Thus, a path can be provided through which in the planarization layer 140 The generated outgassings thus contribute to the organic water absorption layer 172 can be transferred (for example, directed) so that the outgassing can be carried away by means of the organic water absorption layer 172 can be absorbed when water is present in the planarization layer 140 remains (e.g., has remained). Therefore, in the embodiment of the present invention, the organic light-emitting diode or the cathode can be protected from being damaged by outgassings generated by water remaining in the planarization layer.

[0094] Furthermore, as in Fig. 5H is shown, the second inorganic layer 173on the organic water absorption layer 172 formed. The second inorganic layer 173 can the first inorganic layer 171 and the organic water absorption layer 172 cover. The second inorganic layer 173 can be formed from a nitride or oxide material, for example silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide (step S108 of the Fig. 4).

[0095] As the seventh, as in Fig. 5F shown, the upper substrate 60 with the lower substrate 10 (the one with the thin-film transistor layer) 20 , the organic light-emitting diode layer 30 and the encapsulation layer 40 (is provided) by means of the transparent adhesive layer 50connected. That is, the transparent (e.g., see-through) adhesive layer (e.g., adhesion layer) 50 is applied to the second inorganic layer 173 separated, and the upper substrate 60 is applied with the transparent adhesive layer 50 connected (step S109 of the Fig. 4).

[0096] As described above, according to the embodiment of the present invention, the anode line 152 in the non-display area NDA is formed in such a way that it forms the planarization layer. 140 partially exposes the first inorganic layer 171 is formed in such a way that it forms the wall that lies on the partially exposed planarization layer 140 is provided, partially exposed, and the organic water absorption layer 172is formed on the partially exposed embankment. As a result, in the embodiment of the present invention, a path can be provided through which outgassing, which occurs by means of (for example in) the planarization layer, can be carried out. 140 are generated (e.g., arise) to the organic water absorption layer 172 can be transferred (e.g., directed) and the outgassing can be absorbed by means of the organic water absorption layer. 172 are absorbed when water is present in the planarization layer 140 remains (e.g., has remained). Therefore, in the embodiment of the present invention, it can be prevented that the organic light-emitting diode or the cathode is damaged by the outgassings that are generated (e.g., arise) by the water remaining in the planarization layer.

[0097] Fig. Figure 6 shows a cross-sectional view representing an organic light-emitting display device according to a further embodiment of the present invention. The display area DA and the non-display area NDA are shown in Fig. 6 partially shown. Since a lower substrate 10 , a thin-film transistor layer 20 , an organic light-emitting diode layer 30 , a first inorganic layer 171 , a second inorganic layer 173 , a transparent adhesive layer 50 and an upper substrate 60 The organic light-emitting display device according to a further embodiment of the present invention is essentially the same as that of the device described in Fig. The description of the organic light-emitting display device shown in Figure 2 is omitted.

[0098] Referring to Fig. 6 is a transparent (for example, see-through) organic layer 174 on the first inorganic layer 171 provided in the DA display area, and an organic water absorption layer. 172 is on a partially exposed rampart 155 NDA provided in the non-display area.

[0099] For example, the transparent organic layer 174 may be formed from epoxy, acrylate, urethane acrylate, polyurea, polyacrylate, perylene tetracarboxylic acid dianhydride (PTCDA), biphenyl tetracarboxylic acid dianhydride (BPDA) or pyromellitic acid dianhydride (PMDA).

[0100] The organic water absorption layer 172 exhibits a water absorption capacity (for example, a water absorption rate) that is higher than that of the transparent organic layer 174 For example, the organic water absorption layer 172comprising an epoxy resin and an organometallic complex. Preferably, the ratio of the epoxy resin to the organometallic complex is such that it forms part of the organic water absorption layer. 172 The ratio of epoxy resin to organometallic complexes contained in the organic water absorption layer is 9:1, but this is not limited to that. 172 The elements included can be modified by the expert within the scope of design freedom, which can be altered.

[0101] When the organic water absorption layer 172 NDA is only provided in the non-display area, as in Fig. As shown in Figure 6, the organic water absorption layer can be 172 opaque (for example, as an opaque layer, for example, as a non-transparent layer) or with a lower transmittance to visible light than the transparent organic layer 174be formed. Otherwise, if the organic water absorption layer is not present. 172 exhibited lower transparency (e.g., light transmission) than the transparent organic layer 174 , could the image quality be affected due to the organic water absorption layer 172 It may be reduced if the organic water absorption layer 172 in the display area DA. Therefore, in the embodiment of the present invention, the organic water absorption layer 172 , which has a lower transmittance to visible light or is opaque, provided NDA in the non-display area, while the transparent organic layer 174, which has a high light transmittance, in the display area DA is provided, thereby maintaining high image quality while preventing damage to the organic light-emitting diode or the cathode by outgassing generated by water remaining in the planarization layer.

[0102] In the Fig. In the embodiment shown in 6, the wall 155 between the planarization layer 140 and the organic water absorption layer 172 arranged. However, it should be noted, as already mentioned in connection with the embodiment of the Fig. 2 described that according to one or more embodiments of the wall 155 not between the planarization layer 140 and the organic water absorption layer 172 must be arranged. For example, instead of the wall 155between the planarization layer 140 and the organic water absorption layer 172 one or more other layers may be arranged (for example, deposited), for example as long as the organic water absorption layer 172 those in the planarization layer 140 can at least partially absorb the outgassing produced.

[0103] Likewise, in one or more embodiments, one or more other layers can be placed between the planarization layer. 140 and the organic water absorption layer 172 in addition to the wall 155 can be arranged (for example, separated). Likewise, in one or more embodiments of the wall, 155 have an opening (for example, a hole), and the organic water absorption layer 172 can fill the opening in such a way that it covers the planarization layer 140contacted. The opening (the hole) can be a sub-area of ​​the anode lead. 152 Expose the exposed area of ​​the planarization layer, whereby the organic water absorption layer fills the hole in such a way that it touches (e.g., makes contact with) the aforementioned sub-area. For example, the organic water absorption layer can pass through the hole in the wall. 155 through in direct mechanical (e.g., physical) contact with the planarization layer 140 stand.

[0104] Likewise, in one or more embodiments of the wall 155 be omitted, and the organic water absorption layer 172 can be in direct mechanical contact with the planarization layer 140 stand.

[0105] To put it simply, and as described above, the organic water absorption layer can be configured in various ways according to different embodiments. 172 as a moisture-absorbing layer above the planarization layer 140 be provided and may be intended to be removed from the planarization layer 140 to absorb at least some of the generated moisture. For this purpose, the layer arrangement that forms the planarization layer can be used. 140 and the organic water absorption layer 172 (and possibly one or more other layers, such as the wall) 155 , the first inorganic layer 171 or other) exhibits, it should be provided that a path for the removal of moisture is provided, leading from the planarization layer. 140 (i.e., from the moisture-generating layer) to the organic water-absorption layer 172(i.e., the moisture-absorbing layer) leads to.

[0106] Fig. Figure 7 shows a flowchart illustrating a method for manufacturing an organic light-emitting display device according to a further embodiment of the present invention. Fig. 8A to Fig. Figure 8K shows cross-sectional views illustrating a method for manufacturing an organic light-emitting display device according to a further embodiment of the present invention. The method for manufacturing an organic light-emitting display device according to a further embodiment of the present invention is described below with reference to Fig. 8A to Fig. 8K will be described in detail.

[0107] Since steps S201 to S207 of the Fig. 7 and the description of the Fig. 8A to Fig. 8G are essentially the same as steps S101 to S107 of the Fig. 4 and the description of the Fig. 5A to Fig. 5G, its description is omitted.

[0108] As in Fig. 8G is shown, after the second hole H2, which passes through the first inorganic layer 171 through which it is formed, the transparent (for example, see-through) organic layer 174 on the first inorganic layer 171 formed in the DA display area, as in Fig. 8H is shown. The transparent organic layer 174 is designed to prevent particles from entering the light-emitting layer 153 and the cathode 154 penetrate after passing through the first inorganic layer 171 have passed through it. As shown, an area of ​​the transparent organic layer can 174 The NDA must be located in the non-display area.

[0109] For example, the transparent organic layer 174formed from epoxy, acrylate, urethane acrylate, polyurea, polyacrylate, PTCDA, BPDA or PMDA (step S208 of the Fig. 7).

[0110] Then, as in Fig. Figure 8I shows the organic water absorption layer. 172 on the wall 155 , which is exposed through the second hole H2, in the non-display area NDA formed. The organic water absorption layer. 172 It can be formed from an absorbent organic layer. For example, the organic water absorption layer can be... 172 The compound comprises an epoxy resin and an organometallic complex. Preferably, the ratio of the epoxy resin to the organometallic complex can be such that it is present in the organic water absorption layer. 172 The ratio of epoxy resin to organometallic complexes contained in the organic water absorption layer is 9:1, but is not limited to this. This means the ratio of epoxy resin to organometallic complex in the organic water absorption layer.172 The elements included can be modified by the expert within the design scope, which can be altered.

[0111] When the organic water absorption layer 172 NDA is only provided in the non-display area, as in Fig. As shown in Figure 8I, the organic water absorption layer can be 172 opaque (for example, not transparent) or with a lower transmittance to visible light than the transparent organic layer 174 be formed. Otherwise, if the organic water absorption layer is not present. 172 would have lower transparency (e.g., light transmission) than the transparent organic layer 174 , could the image quality be affected due to the organic water absorption layer 172 It may be reduced if the organic water absorption layer 172in the display area DA. Therefore, in the embodiment of the present invention, the organic water absorption layer 172 , which has low transmittance to visible light or is opaque, provided NDA in the non-display area, while the transparent organic layer 174 , which has high transmittance (e.g., light transmittance), is provided in the display area DA, thereby maintaining high image quality and preventing damage to the organic light-emitting diode or the cathode by outgassing generated by water remaining in the planarization layer (step S209 of the Fig. 7).

[0112] Then, as in Fig. 8J is shown, the second inorganic layer 173 on the organic water absorption layer 172formed. The second inorganic layer 173 can the first inorganic layer 171 and the organic water absorption layer 172 cover. The second inorganic layer 173 can be formed from a nitride or oxide material, such as silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide (step 210 the Fig. 7).

[0113] Then, as in Fig. 8K shown, the upper substrate 60 with the lower substrate 10 (the one with the thin-film transistor layer) 20 , the organic light-emitting diode layer 30 and the encapsulation layer 40 is provided) by means of the transparent adhesive layer 50 connected. This means that the transparent (e.g., see-through) adhesive layer (e.g., adhesion layer)50 on the second inorganic layer 173 is deposited and the upper substrate 60 with the transparent adhesive layer 50 is connected (step S211 of the Fig. 7).

[0114] As described above, the anode line 152 According to the embodiment of the present invention, in the non-display area NDA, it is formed such that it forms the planarization layer. 140 partially exposes the first inorganic layer 171 is formed in such a way that it forms the wall 155 , which is located on the partially exposed planarization layer 140 is provided, partially exposed, and the organic water absorption layer 172 is built on the partially exposed rampart 155 formed. As a result, in the embodiment of the present invention, the path through which outgassings produced by the planarization layer pass can be determined. 140are generated, leading to the organic water absorption layer 172 are transferred (e.g., conducted), and the outgassing can be absorbed by means of the organic water absorption layer. 172 are absorbed when water is present in the planarization layer 140 remains. Consequently, in the embodiment of the present invention, it is possible to prevent damage to the organic light-emitting diode or the cathode by means of outgassing generated by water remaining in the planarization layer.

[0115] It is obvious to a person skilled in the art that various modifications and variations can be made to the present invention without departing from the basic concept or the scope of application of the invention. Consequently, it is intended that the present invention covers the modifications and variations of this invention, provided they are within the scope of the appended claims and their equivalents. QUOTES INCLUDED IN THE DESCRIPTION

[0116] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0117] KR 10-2014-0154512

[0001]

Claims

[1] An organic light-emitting display device comprising: a substrate ( 10 ); one on the substrate ( 10 ) provided thin-film transistor layer ( 20 ); one for leveling the thin-film transistor layer ( 20 ) on the thin-film transistor layer ( 20 ) provided planarization layer ( 140 ); an anode line ( 152 ), which are located on the planarization layer ( 140 ) is provided and which forms part of the planarization layer ( 140 ) in a non-display area (NDA) of the display device, which corresponds to a peripheral area outside a display area (DA) of the display device; and an organic water absorption layer ( 172 ), which is on the anode line ( 151 ) exposed area of ​​the planarization layer ( 140) is provided, and which contains an organic material designed to prevent outgassing from the planarization layer ( 140 ) to absorb at least part of it. [2] The organic light-emitting display device according to claim 1, further comprising: a wall ( 155 ), which is located in the area of ​​the planarization layer ( 140 ) is arranged, which is connected to the anode line ( 152 ) is exposed; an inorganic layer ( 171 ), which are on the wall ( 155 ) is provided and which form part of the wall ( 155 ) in the non-display area (NDA), the organic water absorption layer ( 172 ) on the area of ​​the wall ( 155 ) is provided by the inorganic layer ( 171 ) is exposed, wherein preferably the organic water absorption layer ( 172) in direct mechanical contact with the area of ​​the wall ( 155 ) stands, which is from the inorganic layer ( 171 ) is exposed. [3] The organic light-emitting display device according to claim 2, wherein the area of ​​the wall ( 155 ), which is from the inorganic layer ( 171 ) is exposed, the area of ​​the planarization layer ( 140 ), which is from the anode line ( 151 ) is exposed, at least partially overlapped. [4] The organic light-emitting display device according to claim 2 or 3, wherein the anode line ( 152 ) a first hole (H1) to expose the area of ​​the planarization layer ( 140 ) in the non-display area (NDA), with the first hole (H1) being connected by means of the wall ( 155 ) is filled. [5] The organic light-emitting display device according to claim 4, wherein the inorganic layer ( 171) a second hole (H2) to expose the area of ​​the wall ( 155 ) in the non-display area (NDA), wherein the second hole (H2) is covered by the organic water absorption layer ( 172 ) is filled. [6] The organic light-emitting display device according to claim 1, further comprising: a wall ( 155 ), which is located in the area of ​​the planarization layer ( 140 ) is arranged, which is connected to the anode line ( 152 ) is exposed, with the wall ( 155 ) has a hole that is a sub-area of ​​the area of ​​the planarization layer ( 140 ) exposes the anode line ( 152 ) is exposed, and wherein the organic water absorption layer ( 172 ) fills the hole in such a way that it contacts this sub-area, wherein preferably the organic water absorption layer ( 172 ) through the hole in the wall ( 155) through in direct mechanical contact with the planarization layer ( 140 ) stands. [7] The organic light-emitting display device according to claim 1, wherein the organic water absorption layer ( 172 ) in direct mechanical contact with the area of ​​the planarization layer ( 140 ) stands, which is from the anode line ( 152 ) is exposed. [8] The organic light-emitting display device according to any one of claims 1 to 7, wherein the organic water absorption layer ( 172 ) comprising an epoxy resin and an organometallic complex, wherein preferably the ratio between the epoxy resin and the organometallic complex is 9:

1. [9] The organic light-emitting display device according to any one of claims 1 to 8, wherein the organic water absorption layer ( 172 ) is provided in the display area (DA) and the non-display area (NDA). [10] The organic light-emitting display device according to any one of claims 1 to 8, wherein the organic water absorption layer ( 172 ) is only available in the non-display area (NDA). [11] The organic light-emitting display device according to claim 10, further comprising a transparent organic layer ( 174 ), which are located in the display area (DA) adjacent to the organic water absorption layer ( 172 ) is provided, wherein preferably the organic water absorption layer ( 172 ) exhibits a water absorption capacity that is higher than that of the transparent organic layer ( 174 ), wherein preferably the transparent organic layer ( 174) contains at least one of epoxy, acrylate, urethane acrylate, polyurea, polyacrylate, perylene tetracarboxylic acid dianhydride (PTCDA), biphenyl tetracarboxylic acid dianhydride (BPDA) or pyromellitic acid dianhydride (PMDA). [12] A method for manufacturing an organic light-emitting display device, comprising the method: Forming a thin-film transistor layer ( 20 ) on a substrate ( 10 ); Formation of a planarization layer ( 140 ) on the thin-film transistor layer ( 20 ) for leveling the thin-film transistor layer ( 20 ); Forming an anode circuit ( 152 ) on the planarization layer ( 140 ), which comprise an area of ​​the planarization layer ( 140 ) in a non-display area (NDA) of the display device, which corresponds to a peripheral area outside the display area (DA) of the display device; and Formation of an organic water absorption layer ( 172 ) on the area of ​​the planarization layer ( 140 ), which is from the anode line ( 151 ) is exposed, with the organic water absorption layer ( 172 ) contains an organic material designed to prevent outgassing from the planarization layer ( 140 ) to absorb at least part of it. [13] The method according to claim 12, further comprising: Forming a wall ( 155 ) on the area of ​​the planarization layer ( 140 ), which is from the anode line ( 152 ) is exposed; and Formation of an inorganic layer ( 171 ) on the wall ( 155 ), which comprise an area of ​​the wall ( 155 ) in the non-display area (NDA); the organic water absorption layer ( 172 ) on the area of ​​the wall ( 155 ) is formed from the inorganic layer ( 171) is exposed, preferably: the formation of the anode conduction ( 152 ) on the planarization layer ( 140 ) the formation of a first hole (H1) in the anode line ( 152 ) to expose the area of ​​the planarization layer ( 140 ) in the non-display area (NDA) after the anode line ( 152 ) on the planarization layer ( 140 ) is formed, and the formation of the wall ( 155 ) on the area of ​​the planarization layer ( 140 ), which is from the anode line ( 152 ) is exposed, filling the first hole (H1) with the wall ( 155 ) shows, further preferably: the formation of the inorganic layer ( 171 ) on the wall ( 155 ) the formation of a second hole (H2) in the wall ( 155 ) to expose the area of ​​the wall ( 155) in the non-display area (NDA) after the inorganic layer ( 171 ) on the wall ( 155 ) is formed, and the formation of the organic water absorption layer ( 172 ) on the area of ​​the wall ( 155 ), which is from the inorganic layer ( 171 ) is exposed, the filling of the second hole (H2) with the organic water absorption layer ( 172 ) exhibits. [14] The method according to claim 12 or 13, further comprising: Formation of the organic water absorption layer ( 172 ) only in the non-display area (NDA), and preferably Formation of a transparent organic layer ( 174 ) in the display area (DA) adjacent to the organic water absorption layer ( 172 ), wherein the organic water absorption layer is further preferably ( 172) exhibits a water absorption capacity that is greater than that of the transparent organic layer ( 174 ). [15] The method according to any one of claims 12 to 14, wherein the organic water absorption layer ( 172 ) comprising an epoxy resin and an organometallic complex, wherein preferably the ratio between the epoxy resin and the organometallic complex is 9:1.

Images