Optoelectronic component and method for manufacturing an optoelectronic component

Abstract

The invention relates to an optoelectronic component (100) comprising an organic functional layer stack (2) arranged between a first and a second electrode (1, 4, 11, 41) and configured to emit radiation, and a thin-film encapsulation (3) which is electrically conductive, wherein the thin-film encapsulation (3) covers at least the first and second electrodes (1, 4, 11, 41) over their entire surface and is in direct electrical contact with the first and second electrodes (1, 4, 11, 41).

Description

The invention relates to an optoelectronic component. Furthermore, the invention relates to a method for manufacturing an optoelectronic component. Optoelectronic components, such as organic light-emitting diodes (OLEDs), are extremely sensitive to moisture and oxygen. Therefore, they typically feature thin-film encapsulations for protection against these hazards. All known thin-film encapsulations share the common characteristic of consisting of single layers or nanolaminates that are electrically insulating. Since the entire surface of the optoelectronic component usually needs to be coated with the thin-film encapsulation due to the manufacturing process, the electrodes, especially the contact surfaces in the vertical direction, are insulated. These must then be exposed in a subsequent process step, for example by laser ablation or etching, so that the optoelectronic component can be electrically contacted. The publication DE 10 2014 100 627 A1 describes an optoelectronic component and a method for manufacturing an optoelectronic component. Document US 2012 / 0161618A1 describes an organic light-emitting display panel and a method for manufacturing an organic light-emitting display panel. The publication DE 10 2008 031 405 A1 describes a method for manufacturing an organic electronic component and an organic electronic component. The document DE 10 2012 109 228 A1 is cited by the examining body as the closest prior art and describes a method for determining the permeability of a dielectric layer of an optoelectronic device, a device for determining the permeability of a dielectric layer of an optoelectronic device, an optoelectronic device and a method for manufacturing an optoelectronic device. Publication WO 2013 / 042 533 A1 describes an organic electroluminescent panel and a method for producing an organic electroluminescent panel. One object of the invention is to provide an optoelectronic component featuring improved thin-film encapsulation. In particular, the thin-film encapsulation is shaped such that no subsequent exposure of the electrodes, especially the contact surfaces, in the vertical direction is required. A further object of the invention is to provide a method for manufacturing an optoelectronic component that is faster, more efficient, and / or more cost-effective. These problems are solved by an optoelectronic component according to independent claim 1. Advantageous embodiments and further developments of the invention are the subject of dependent claims. Furthermore, these problems are solved by a method for manufacturing an optoelectronic component according to claim 14. Advantageous embodiments and further developments of the method are the subject of dependent claim 15. The optoelectronic device comprises a first electrode comprising a first electrode contact surface, a second electrode comprising a second electrode contact surface, an organic functional layer stack arranged between the first and second electrodes and configured to emit radiation, and an electrically conductive thin-film encapsulation arranged on and in direct electrical contact with the first and second electrodes. The optoelectronic device further comprises an insulating trench between the first electrode contact surface and the second electrode contact surface, the electrically conductive thin-film encapsulation being arranged within the insulating trench. The method for manufacturing an optoelectronic device comprises the steps of: - providing a first electrode comprising a first electrode contact surface, - providing an organic functional layer stack on the first electrode configured to emit radiation, - providing a second electrode comprising a second electrode contact surface on the organic functional layer stack, and - applying an electrically conductive thin-film encapsulation on and in direct electrical contact with the first and the second electrode, further comprising an insulating trench between the first electrode contact surface and the second electrode contact surface, wherein the electrically conductive thin-film encapsulation is arranged in the insulating trench. In at least one embodiment, the optoelectronic device comprises an organic functional layer stack. The organic functional layer stack is arranged between the first and second electrodes. The organic functional layer stack is configured to emit radiation. The optoelectronic device has a thin-film encapsulation. The thin-film encapsulation is electrically conductive. The thin-film encapsulation completely covers at least the first and second electrodes. The thin-film encapsulation is in direct electrical contact with the first and second electrodes. According to at least one embodiment, the optoelectronic component is an organic light-emitting component. In particular, the optoelectronic component is an organic light-emitting diode (OLED). Specifically, the component is operational, i.e., it is configured and capable of emitting radiation. According to at least one embodiment, the optoelectronic device and / or the organic functional layer stack is configured to emit radiation from at least the visible wavelength range. In particular, the radiation has a wavelength or wavelength maximum that is between 400 nm and 800 nm inclusive, for example, between 420 nm and 680 nm inclusive. According to at least one embodiment, the optoelectronic device comprises an organic functional layer stack. In particular, the organic functional layer stack comprises organic polymers, organic oligomers, organic monomers, organic small nonpolymeric molecules, or combinations thereof. The organic functional layer stack can include at least one organic light-emitting layer. In addition to the single organic light-emitting layer, the organic functional layer stack can include at least one functional layer configured as a hole transport layer to enable effective hole injection into at least one of the light-emitting layers.Suitable materials for a hole transport layer include, for example, tertiary amines, carbazole derivatives, camphorsulfonic acid-doped polyaniline, or polystyrenesulfonic acid-doped polyethylenedioxythiophene. The organic functional layer stack can further comprise at least one functional layer configured as an electron transport layer. In general, in addition to the at least one organic light-emitting layer, the organic functional layer stack can include further layers selected from hole injection layers, hole transport layers, electron injection layers, electron transport layers, hole blocking layers, and electron blocking layers. According to at least one embodiment, the optoelectronic component has at least two electrodes, in particular a first and a second electrode. In particular, the organic functional layer stack is arranged between the two electrodes. In particular, the term "first and second electrode" also includes the contact surfaces, i.e., the first and second electrode contact surfaces or contact pads that are configured for external connection. In particular, the electrode contact surfaces are also covered by the thin-film encapsulation. According to at least one embodiment, at least one of the electrodes is transparent. Here and in the following, "transparent" refers to a layer that is permeable to visible light. This at least transparent layer can be clearly translucent or at least partially light-scattering and / or partially light-absorbing, so that the transparent layer can, for example, also be diffusely or milkily translucent. A layer referred to here as transparent is particularly preferably as light-transmitting as possible, so that the absorption of light or radiation generated during the operation of the component is as low as possible. According to at least one embodiment, both electrodes are transparent. In this case, the light generated in the organic functional layer stack can be emitted in both directions, i.e., through both electrodes. If the optoelectronic device has a substrate, this means that light can be emitted both through the substrate, which is also transparent, and in the direction away from the substrate. Furthermore, in this case, all layers of the optoelectronic device can be transparent, so that the optoelectronic device forms a transparent OLED.Furthermore, it is also possible that one of the two electrodes between which the functional layer stack is arranged is not transparent and preferably reflective, so that the light generated in the organic functional layer stack can only be emitted in one direction through the transparent electrode. If the electrode arranged on the substrate is transparent and the substrate is also transparent, it is referred to as a bottom emitter, while if the electrode facing away from the substrate is transparent, it is referred to as a top emitter. According to at least one embodiment, one electrode is transparent and the other electrode is shaped to be reflective, so that the radiation generated in the optoelectronic component is coupled out in the direction of the transparent electrode. A transparent conductive oxide can be used as a material for a transparent electrode. Transparent conductive oxides (TCOs) are typically metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). Besides binary metal-oxygen compounds, such as ZnO, SnO₂, or In₂O₃, ternary metal-oxygen compounds, such as Zn₂SnO₄, CdSnO₃, ZnSnO₃, MgIn₂O₄, GaInO₃, Zn₂In₂O₅, or In₄Sn₃O₁₂, or mixtures of different transparent conductive oxides, also belong to the group of TCOs. TCOs do not necessarily have a stoichiometric composition and can be p- or n-doped. Indium tin oxide (ITO) is a particularly common transparent material. Furthermore, a transparent electrode can also have a metal layer made of a metal or alloy, for example, one or more of the following materials: silver, platinum, gold, magnesium, or an alloy of silver and magnesium. Other metals are also possible. The metal layer is so thin that it is at least partially transparent to the light generated by the organic functional layer stack, for example, a thickness of less than or equal to 50 nm. A reflective electrode can be made from a metal such as aluminum, barium, indium, silver, gold, magnesium, calcium, or lithium, as well as compounds, combinations, and alloys thereof. In particular, a reflective electrode can consist of silver, aluminum, or alloys containing these metals, for example, Ag:Mg, Ag:Ca, or Mg:Al. In particular, the electrodes can be nanostructured electrodes, for example electrodes with nanowire structures such as silver nanowires, or made of graphene. In particular, the first electrode can be configured as the anode, in which case the second electrode is configured as the cathode. Alternatively, the first electrode can be configured as the cathode, in which case the second electrode is configured as the anode. The electrodes can also consist of a combination of at least one or more TCO layers and at least one or more metal layers. According to at least one embodiment, the optoelectronic component has a thin-film encapsulation. The thin-film encapsulation is electrically conductive. This can mean that the thin-film encapsulation conducts electric current. According to at least one embodiment, the specific resistance of the thin-film encapsulation is between 0.1 Ω·m and 250 Ω·m inclusive, preferably between 0.5 Ω·m and 50 Ω·m inclusive, and particularly preferably between 1 Ω·m and 10 Ω·m inclusive, for example 5 Ω·m. Alternatively or additionally, the resistance between the two electrodes, in particular between the contact surfaces of the electrodes, across the thin-film encapsulation is at least 10⁵ Ω, 10⁶ Ω, or 10⁷ Ω. According to at least one embodiment, the component has an operating current that enables it to emit radiation. The component has a leakage current that flows through the thin-film encapsulation. In particular, the operating current is greater than the leakage current of the component by a factor of 500, 750, 1000, 5000, 15000, or 30000. Preferably, the operating current of the component for emitting radiation is greater than the leakage current of the component flowing through the thin-film encapsulation by a factor of at least 750 or 5000. The inventors have recognized that by using an electrically conductive thin-film encapsulation, particularly on the electrode contact surfaces, subsequent removal of the thin-film encapsulation from the contact surfaces, especially in the vertical direction, is unnecessary. In other words, the contact surfaces do not need to be exposed again, for example, by laser ablation or etching, to allow the optoelectronic component to be electrically contacted. This accelerates the overall manufacturing process of the optoelectronic component and thus reduces production costs. Furthermore, there is a lower risk of yield losses, as an additional process step is not required. Additionally, there is a lower risk of yield losses because there are no structuring residues on the contact surfaces that could impede contacting.On the other hand, electrically conductive thin-film encapsulation allows for the provision of new optoelectronic components that enable simple and fast testing on the so-called plate-level basis even after the thin-film encapsulation step. In other words, an optoelectronic device can be provided with thin-film encapsulation that is free of restructuring process steps. Thin-film encapsulation and thin-film encapsulation (TFE) are used synonymously here and in the following. According to at least one embodiment, the thin-film encapsulation has a layer thickness d. A minimum distance L exists within the thin-film encapsulation between the first and second electrodes. The minimum distance L is at least 500, 600, 700, 800, 900, 1000, 2000, 5000, 10000, or 15000 times greater than the layer thickness d of the thin-film encapsulation. The minimum distance L can also be referred to as an insulation trench. According to at least one embodiment, the layer thickness has a value between 50 nm and 2 µm, in particular between 60 nm and 300 nm, for example 250 nm. According to at least one embodiment, the thin-film encapsulation is applied to the entire surface or over the entire surface of the organic functional layer stack and protects at least this stack from environmental influences. In other words, in its functional application, the thin-film encapsulation forms a seal against environmental influences for at least the organic functional layer stack. The thin-film encapsulation thus provides a hermetic seal against environmental influences, such as moisture and / or oxygen and / or other corrosive substances, like hydrogen sulfide. In particular, the thin-film encapsulation protects the at least one organic functional layer stack from the environment, thus preventing degradation and / or corrosion. According to at least one embodiment, the thin-film encapsulation comprises a transparent conductive oxide as its main component. Here and in the following, "main component" can mean that the proportion of the transparent conductive oxide in the thin-film encapsulation is greater than 50%, preferably greater than 90% or 95%. Preferably, the thin-film encapsulation consists of the transparent conductive oxide. According to at least one embodiment, a metal oxide, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO), can typically be used as the transparent conductive oxide (TCO). In addition to binary metal-oxygen compounds, such as ZnO, SnO₂, or In₂O₃, ternary metal-oxygen compounds, such as Zn₂SnO₄, CdSnO₃, ZnSnO₃, MgIn₂O₄, GaInO₃, Zn₂In₂O₅, or In₄Sn₃O₁₂, or mixtures of different transparent conductive oxides, also belong to the group of TCOs. Furthermore, the TCOs do not necessarily have a stoichiometric composition and can be p- or n-doped. Preferably, indium tin oxide or aluminum zinc oxide (AZO) are used as transparent conductive oxides. Aluminum zinc oxide, in particular, is lightly doped. This allows the conductivity of the thin-film encapsulation to be adjusted as desired during the manufacturing process. The thin-film encapsulation can be deposited, for example, by atomic layer deposition (ALD) or by sputtering. The weakly conductive thin-film encapsulation can be deposited completely or over the entire surface of the optoelectronic component. This ensures that both contact surfaces of the respective electrodes are covered by a thin, high-resistance thin-film encapsulation that remains contactable. However, electrical cross-connections between the anode and cathode contact surfaces can also occur. Due to manufacturing constraints, the anode and cathode contact surfaces can also be separated by an insulating trench several hundred micrometers wide. Preferably, the distance between the contact surfaces is at least 500 micrometers, for example, 550 micrometers. Compared to the length of the insulating trench, the thickness d of the thin-film encapsulation is in the range of 50 nm. Thus, the insulating trench is at least 500 to, for example, 10,000 times larger than the width of the insulating trench or the insulating strip. The thin-film encapsulation exhibits a comparatively low electrical conductivity. This contrasts with previously known electrically conductive barrier layers, such as those applied using ALD. These are known, for example, from WO 2008 / 082472 A1, where they are used as transparent top electrodes. However, when used as electrodes, these conductive barrier layers are designed for the highest possible conductivity, whereas the device according to the invention, with its thin-film encapsulation, is designed to be weakly conductive. For example, WO 2008 / 082472 A1 specifies a specific resistance of ≤ 0.0005 Ω · m (calculated from a layer thickness of 50 nm and a surface resistance ≤ 10000 Ω / sq), while the device according to the invention with thin-film encapsulation has, for example, a resistance between 0.1 Ω · m and 250 Ω · m, for example of approximately 10 Ω · m. According to at least one embodiment, the thin-film encapsulation comprises one or more thin layers. The thin-film encapsulation has a layer thickness d and a layer sequence n, wherein the layer sequence n consists of a conductive layer and a non-conductive layer. The layer sequence n has a layer thickness T. x is the number of layer sequences n, and at least 1, preferably 5 to 30. The following holds true: x · n · T = d. Overall, the thin-film encapsulation exhibits conductivity. A non-conductive layer can be a material selected from a group that includes or consists of aluminium oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, lanthanum oxide, silicon carbide, silicon oxide, silicon nitride and tantalum oxide. According to at least one embodiment, the conductive layer can comprise or consist of the transparent conductive oxide. Preferably, indium tin oxide (ITO) is used as the transparent conductive oxide. According to at least one embodiment, the thin-film encapsulation is free of electrically insulating materials. In other words, the thin-film encapsulation contains no electrically insulating materials, but only electrically conductive materials. Therefore, subsequent removal of the thin-film encapsulation from the electrode contact surfaces, for example by read ablation or etching, is unnecessary. For instance, it also eliminates the need to coat the electrode contact surface with a sacrificial layer, thus avoiding the need to lift off the thin-film encapsulation using a lift-off process. According to at least one embodiment, the optoelectronic device comprises a substrate. In particular, one of the two electrodes, especially the first electrode, is arranged on the substrate. The substrate can, for example, comprise one or more materials in the form of a layer, a plate, a film, or a laminate, selected from glass, quartz, plastic, metal, silicon, and wafers. In particular, the substrate comprises or consists of glass. In particular, the radiation from the organic functional layer stack above the first electrode and the substrate is coupled out of the device. It is thus a so-called bottom emitter. Alternatively, the device can also be configured as a top emitter or a bidirectional emitter. Furthermore, a method for manufacturing an optoelectronic component is described. Preferably, the optoelectronic component described above is manufactured using the method described here. Therefore, all definitions and statements made regarding the optoelectronic component also apply to the method for manufacturing an optoelectronic component, and vice versa. According to at least one embodiment, the method comprises the steps: A) providing an organic functional layer stack between a first and a second electrode, which is configured to emit radiation, and B) applying a thin-film encapsulation over the entire surface of the layer stack provided in step A), the first and the second electrode, wherein the thin-film encapsulation is electrically conductive and is in direct electrical contact with the first and the second electrode. Direct electrical contact, as used here and in the following, can be understood as direct electrical contact between the thin-film encapsulation and the two electrodes. The fact that a layer or element is arranged or applied "on" or "over" another layer or element can mean, here and in the following, that the layer or element is in direct mechanical and / or electrical contact with the other layer or element. It can also mean that the layer or element is arranged indirectly over another layer or element. In this case, further layers or elements may be arranged between the layer and the element. The fact that a layer or element is arranged "between" two other layers or elements can mean, here and in the following, that the layer or element is in direct mechanical and / or electrical contact or in indirect contact with one of the other two layers or elements. In the case of indirect contact, further layers and / or elements may be arranged between the layer or element and at least one of the other two layers or elements. According to at least one embodiment, step B) is carried out by means of sputtering or atomic layer deposition. Preferably, step B) is carried out by means of sputtering. Furthermore, the application relates to the following aspects and combinations of aspects, which are numbered: 1. Optoelectronic device (100) comprising: - an organic functional layer stack (2) arranged between a first and a second electrode (1, 4, 11, 41) and configured to emit radiation; - a thin-film encapsulation (3) which is electrically conductive, wherein the thin-film encapsulation (3) fully covers at least the first and second electrodes (1, 4, 11, 41) and is in direct electrical contact with the first and second electrodes (1, 4, 11, 41). 2. Optoelectronic device (100) according to aspect 1, wherein the resistivity of the thin-film encapsulation (3) is between 0.1 Ω·m and 250 Ω·m and the resistance between the two electrodes (1, 4, 11, 41) across the thin-film encapsulation (3) is at least 10⁵ Ω. 3.1. Optoelectronic device (100) according to at least one of the preceding aspects, wherein an operating current of the device for emission of radiation is at least 750 times greater than a leakage current of the device flowing through the thin-film encapsulation. 2. Optoelectronic device (100) according to at least one of the preceding aspects, wherein the thin-film encapsulation (3) has a layer thickness d, wherein a minimum distance L is present between the first and the second electrode (1, 4, 11, 41) within the thin-film encapsulation (3), wherein the minimum distance L is at least 500 times greater than the layer thickness d of the thin-film encapsulation (3). 3. Optoelectronic device (100) according to at least one of the preceding aspects, wherein the thin-film encapsulation (3) is applied over the entire surface and protects the organic functional layer stack (2) from environmental influences. 4.Optoelectronic device (100) according to at least one of the preceding aspects, wherein the thin-film encapsulation (3) comprises or consists of a transparent conductive oxide (31) as its main component. 7. Optoelectronic device (100) according to at least one of the preceding aspects, wherein the transparent conductive oxide (31) is indium tin oxide or aluminum zinc oxide. 8. Optoelectronic device (100) according to at least one of the preceding aspects, wherein the thin-film encapsulation (3) has a layer thickness d and a layer sequence n, wherein the layer sequence n consists of a conductive layer (32) and a non-conductive layer (33), and wherein the layer sequence n has a layer thickness T, where: x · n · T = d, where x is the number of layer sequences n and at least x = 1. 9.Optoelectronic device (100) according to at least one of the preceding aspects, wherein the non-conductive layer (33) comprises a material selected from the group consisting of aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, lanthanum oxide, silicon carbide, silicon oxide, silicon nitride, and tantalum oxide. 10. Optoelectronic device (100) according to at least one of the preceding aspects, wherein the conductive layer (32) comprises the transparent conductive oxide (31). 11. Optoelectronic device (100) according to the preceding aspect, wherein the transparent conductive oxide (31) is indium tin oxide. 12. Optoelectronic device (100) according to at least one of aspects 1 to 7, wherein the thin-film encapsulation (3) is free of electrically insulating materials. 13.Optoelectronic device (100) according to at least one of the preceding aspects, comprising a substrate (5) on which the first electrode (1) is directly arranged, wherein the radiation of the organic functional layer stack (2) above the first electrode (1) and the substrate (5) is coupled out of the device (100). 14.Method for fabricating an optoelectronic device (100) according to any one of Aspects 1 to 13 comprising the steps: A) providing an organic functional layer stack (2) between a first and a second electrode (1, 4, 11, 41) configured to emit radiation, and B) applying a thin-film encapsulation (3) over the entire surface of the layer stack provided in step A), the first and the second electrode (1, 4, 11, 41), wherein the thin-film encapsulation (3) is electrically conductive and is in direct electrical contact with the first and the second electrode (1, 4, 11, 41). 15. Method according to Aspect 14, wherein step B) is carried out by sputtering or atomic layer deposition. Further advantages, advantageous designs and further developments result from the exemplary embodiments described below in conjunction with the figures. Figure 1 shows a top view of an optoelectronic component according to one embodiment, Figure 2A shows a top view of an optoelectronic component according to one embodiment, Figures 2B to 2D each show a side view of an optoelectronic component according to one embodiment, Figures 3A and 3B each show a top view of an optoelectronic component according to one embodiment, Figure 4 shows a schematic side view of an optoelectronic component according to one embodiment, and Figure 5 shows a schematic side view of an optoelectronic component according to one embodiment. In the exemplary embodiments and figures, identical, similar, or equivalent elements may be designated with the same reference numerals. The depicted elements and their relative sizes are not to be considered to scale. Rather, individual elements such as layers, components, building elements, and areas may be exaggerated in size for clarity and / or better understanding. Figure 1 shows a schematic top view of an optoelectronic component 100 according to one embodiment. The optoelectronic component 100 has a first electrode 1 and a second electrode 4. An organic functional layer stack 2 is arranged between the first electrode 1 and the second electrode 4. The electrode contact surfaces 11 and 41 are shown as part of the respective electrodes. For example, electrode contact surface 41 is the cathode contact surface and electrode contact surface 11 is the anode contact surface. Preferably, electrode contact surface 11 contacts the first electrode 1 and electrode contact surface 41 contacts the second electrode 4. Furthermore, the optoelectronic component has a varnish or resist 6. The component 100 also has a thin-film encapsulation 3 that completely covers at least the first electrode and the second electrode, including the contact surfaces 11 and 41.The thin-film encapsulation 3 is in direct electrical contact with the first electrode 1 and the second electrode 4. Since the thin-film encapsulation 3 is electrically conductive, no restructuring of the thin-film encapsulation is necessary across the contact surfaces 11 and 41. In other words, the contact surfaces 11 and 41 can be contacted externally despite the presence of the thin-film encapsulation 3. Figure 2A shows a schematic top view of an optoelectronic component 100 according to one embodiment. The component in Figure 2A essentially corresponds to the component in Figure 1. Sectional views a), b), and c) are shown in the component in Figure 2A. Figures 2B to 2D show these sectional views along the correspondingly labeled lines a), b), and c) of Figure 2A. Fig. 2B shows a schematic side view of an optoelectronic component 100 according to one embodiment. Sectional view a) is shown here. The component 100 has a substrate 5 on which a first electrode 1, for example made of ITO, is arranged. A resist or lacquer 6 is arranged over the first electrode 1, followed by the organic functional layer stack 2 and the second electrode 4, which is, for example, the cathode. The thin-film encapsulation 3 is arranged over the entire surface, at least over the first and second electrodes 1 and 4. Furthermore, the thin-film encapsulation 3 covers the contact surfaces 11, which are preferably shaped metallically, for example made of CrAlCr. Alternatively, other metals, such as gold or silver, can also be used. The thin-film encapsulation 3 has a layer thickness d. Fig. 2B also shows...2B the minimum distance L within the thin-film encapsulation 3 between the first and second electrodes 1, 4. Preferably, the minimum distance L is at least 500 times greater than the layer thickness d of the thin-film encapsulation 3. A leakage current path can develop between the cathode and the lateral anode current distribution or the ITO. The width of the leakage current path ranges from a few hundred micrometers to a few millimeters. Figure 2C shows a schematic side view of an optoelectronic component 100 according to an embodiment of the sectional view b). The substrate 5 and two contact surfaces 11, 41, for example made of chromium-aluminum-chromium, are shown. The contact surfaces 11, 41 are completely covered with the thin-film encapsulation 3. A minimum distance L or insulation gap is shown between the contact surfaces 11, 41. The conductive thin-film encapsulation 3 allows for a cross-circuit between the contact surfaces 11, 41, in particular between the anode and cathode contact surfaces 11, 41. The minimum distance L is, in particular, a few hundred micrometers, for example 550 micrometers. This prevents a short circuit. Figure 2D shows a schematic side view of an optoelectronic component 100 according to one embodiment. Sectional view c) is shown. The substrate 5 and the contact surface 11 are shown, on which the conductive thin-film encapsulation 3 is arranged over its entire surface. The thin-film encapsulation 3 completely covers the contact surface 11. However, the thin-film encapsulation 3 is only a few nm thick, for example 50 nm, so that hardly any voltage can drop. Figures 3A and 3B, in conjunction with the following Tables 1 to 3, each show a schematic top view of an optoelectronic component according to one embodiment and the calculation of the voltage losses and leakage currents based on the assumption that an operating current density of 10 mA / cm², an operating voltage of 5 V, and a specific resistance of the thin-film encapsulation 3 of 10 Ω·m were used. Table 1 Component area 39.4 cm² Operating current density 10 mA / cm² Operating current 0.39A Operating voltage 5.00V specific resistance of the TFE10Ohmm Cathode pad area: 37.25 mm² Anode pad area 112.5 mm² Anode pad area 212.5 mm² TFE thickness 50nm Distance between anode and cathode pads: 10µm Table 2 Table 2 Cathode pad contact resistance 0.013 ohms Voltage drop 0.005V Anode pads, contact resistance: 10.040 ohms Contact resistance pad 20.040 ohms Total resistance (parallel) 0.020 ohms Voltage drop 0.008V Cathode pad +anode pad voltage drop0.013V The contact surfaces 11 and 41 are shown in Figures 3A and 3B. Specifically, contact surface 11 is the anode contact surface and contact surface 41 is the cathode contact surface. Reference numerals 11 to 14 indicate the so-called coastlines. These are, in particular, the lines where the anode and cathode surfaces are parallel to each other. Tables 1 to 3 show the corresponding coastlines 11 to 14 as well as the calculated voltage drop and leakage currents. It can be shown that the weakly conductive thin-film encapsulation 3 causes a voltage drop of 0.013 V in the vertical direction between contact surfaces 11 and 41 and the contacts. The lateral leakage current between the cathode and anode contact pads is 1.7 × 10⁵ A.The component according to the invention exhibits a very low voltage drop between the contact surfaces 11, 41 of the electrodes 1, 4 and the external contact, and simultaneously only minimal leakage currents between the anode and cathode. In this embodiment, the component 100 is symmetrically constructed. Here, the component 100 is rectangular in shape. However, the component 100 can also have a different geometry, for example, round or elliptical. An asymmetrical construction of the component 100 is also possible. Figure 4 shows a schematic side view of an optoelectronic component 100 according to one embodiment. The thin-film encapsulation 3 is shown here. The thin-film encapsulation 3 has a layer thickness d. Furthermore, the thin-film encapsulation 3 has a layer sequence n. The layer sequence n consists of a conductive layer 32, for example, of ITO, and a non-conductive layer 33, for example, of aluminum oxide. The layer sequence n has a layer thickness T. Thirteen layer sequences n (x = the number of layer sequences n) are shown here, each layer sequence n having a layer thickness T. The sum of the layer sequences n with layer thickness T gives the layer thickness d of the thin-film encapsulation 3. For example, layer sequence n has a layer thickness T of 4 nm, so that the total layer thickness d of the thin-film encapsulation is 52 nm. The inventors have recognized that by combining the thin-film encapsulation 3 from a layer sequence n of an insulating layer 33 and a non-insulating layer 32, a thin-film encapsulation 3 can be provided which has both barrier properties and encapsulation properties and is nevertheless electrically conductive overall, thus exhibiting low voltage loss and minimal leakage current. Figure 5 shows a schematic side view of an optoelectronic device 100 according to one embodiment. The device 100 has a substrate 5, for example made of glass. A first electrode 1, for example the anode 1, is directly connected to the substrate 5. The organic functional layer stack 2 is connected downstream of the first electrode 1. The organic functional layer stack 2 has, in particular, at least one light-emitting layer or more than one light-emitting layer, for example, two or three light-emitting layers. Furthermore, the organic functional layer stack 2 can have hole transport layers, hole injection layers, electron transport layers, and / or electron injection layers. A second electrode 4 is connected downstream of the organic functional layer stack 2.The thin-film encapsulation 3 encapsulates at least the organic functional layer stack 2 and completely covers the electrodes 1, 4. The embodiments and their features described in connection with the figures can also be combined with one another according to further embodiments, even if such combinations are not explicitly disclosed in connection with the figures. Furthermore, the embodiments described in connection with the figures can have additional or alternative features as described in the general part. Reference symbol list 100 optoelectronic device 1 first electrode 11 first electrode contact surface 2 organic functional layer stack 3 thin-film encapsulation 31 transparent conductive oxide 4 second electrode 41 second electrode contact surface d layer thickness n layer sequence of the thin-film encapsulation 32 conductive layer of the thin-film encapsulation 33 non-conductive layer of the thin-film encapsulation 5 substrate 6 resist L minimum distance within the thin-film encapsulation T layer thickness of the layer sequence nx number of layers n

Claims

Optoelectronic device (100) comprising: a first electrode (1) comprising a first electrode contact surface (11); a second electrode (4) comprising a second electrode contact surface (41); an organic functional layer stack (2) arranged between the first and the second electrode (1, 4, 11, 41) and configured to emit radiation; an electrically conductive thin-film encapsulation (3) arranged on and in direct electrical contact with the first and the second electrode (1, 4, 11, 41), further comprising an insulating trench between the first electrode contact surface (11) and the second electrode contact surface (41), wherein the electrically conductive thin-film encapsulation (3) is arranged in the insulating trench. Optoelectronic component (100) according to the preceding claim, wherein a width of the insulation trench is greater than a layer thickness (d) of the electrically conductive thin-film encapsulation (3). Optoelectronic component (100) according to the preceding claim, wherein the width of the insulation trench is at least 500 µm. Optoelectronic component (100) according to at least one of the preceding claims, wherein a layer thickness (d) of the electrically conductive thin-film encapsulation (3) has a value between 50 nm inclusive and 2 µm inclusive. Optoelectronic component (100) according to at least one of the preceding claims, wherein a layer thickness (d) of the electrically conductive thin-film encapsulation (3) has a value between 60 nm inclusive and 300 nm inclusive. Optoelectronic component (100) according to at least one of the preceding claims, wherein a specific resistance of the electrically conductive thin-film encapsulation (3) is between 0.1 Ω · m and 250 Ω · m and a resistance between the first electrode (1, 11) and the second electrode (4, 41) via the electrically conductive thin-film encapsulation (3) is at least 105Ω. Optoelectronic component (100) according to at least one of the preceding claims, wherein the electrically conductive thin-film encapsulation (3) comprises or consists of a transparent conductive oxide (31) as its main component. Optoelectronic component (100) according to the preceding claim, wherein the transparent conductive oxide (31) is indium tin oxide or aluminum zinc oxide. Optoelectronic component (100) according to at least one of the preceding claims, wherein the electrically conductive thin-film encapsulation (3) has a sequence of layers, wherein the sequence of layers consists of at least one conductive layer (32) and at least one non-conductive layer (33), wherein the at least one conductive layer (32) and the at least one non-conductive layer (33) are arranged alternately. Optoelectronic device (100) according to the preceding claim, wherein the non-conductive layer (33) comprises a material selected from the group consisting of aluminium oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, lanthanum oxide, silicon carbide, silicon oxide, silicon nitride and tantalum oxide. Optoelectronic component (100) according to at least one of the preceding claims, wherein the electrically conductive thin-film encapsulation (3) covers at least the first and second electrodes (1, 4, 11, 41) over the entire surface. Optoelectronic component (100) according to at least one of the preceding claims, wherein the electrically conductive thin-film encapsulation (3) is an ALD layer. Optoelectronic component (100) according to at least one of the preceding claims, wherein the electrically conductive thin-film encapsulation (3) protects the organic functional layer stack (2) from environmental influences. Method for manufacturing an optoelectronic device (100) comprising the steps of: - providing a first electrode (1) comprising a first electrode contact surface (11), - providing an organic functional layer stack (2) on the first electrode (1, 11) configured to emit radiation, - providing a second electrode (4) comprising a second electrode contact surface (41) on the organic functional layer stack (2), and - applying an electrically conductive thin-film encapsulation (3) on and in direct electrical contact with the first and second electrodes (1, 4, 11, 41), further comprising an insulating trench between the first electrode contact surface (11) and the second electrode contact surface (41), wherein the electrically conductive thin-film encapsulation (3) is arranged in the insulating trench. Method according to claim 14, wherein the application of the electrically conductive thin-film encapsulation (3) is carried out by means of sputtering or atomic layer deposition methods.

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