Semiconductor Device and Method for Manufacturing a Semiconductor Device

DE102016203581B4Active Publication Date: 2026-07-09FUJI ELECTRIC CO LTD
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
FUJI ELECTRIC CO LTD
Filing Date
2016-03-04
Publication Date
2026-07-09

AI Technical Summary

Technical Problem

The remelting of solder during the assembly process leads to solder erosion of the semiconductor element electrodes, resulting in deterioration of the semiconductor unit and device quality.

Method used

The use of a joining material that irreversibly transitions to a solid phase state, such as a sintered metal body, to bond semiconductor elements and units, preventing electrode erosion by maintaining a higher melting point than traditional solder.

Benefits of technology

Prevents electrode erosion and improves the reliability and assembly quality of semiconductor devices by using a high-melting-point joining material, ensuring efficient and durable connections.

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Abstract

Semiconductor device (20) comprising: a plurality of semiconductor units (10), each comprising: a laminated substrate (11) formed by laminating an insulating plate (11a) and a circuit board (11c); a semiconductor element (12) joined to the circuit board (11c) using an adhesive (13a) that undergoes a non-reversible phase transition to a solid-state state; a conductive support pin (14d) the end section of which is joined to a main electrode of the semiconductor element (12) using the adhesive (13b); and a circuit board (14) arranged opposite the semiconductor element (12), wherein the adhesive (13a) is a sintered metal body comprising silver or copper; a base plate (21) joined to each of the plurality of semiconductor units (10) using solder (22a);and a connection unit (23) which electrically connects the plurality of semiconductor units (10) in parallel;
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