Semiconductor element with trench structure

DE102017100558B4Active Publication Date: 2026-06-11INFINEON TECHNOLOGIES AMERICAS CORP
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Patent Information

Application Number
DE102017100558
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2016-01-13
Filing Date
2017-01-12
Publication Date
2026-06-11
Estimated Expiration
2037-01-12

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Abstract

Semiconductor component, comprising: a semiconductor substrate with a base region (306) located above a drift region (304); a doped column (322) extending into the drift area; a gate trench (310) extending through the base area (306) and into the drift area (304); wherein the gate trench (310) surrounds the doped column (322), wherein the gate trench has a gate electrode located above a buried electrode.
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Citation Information

Patent Citations

  • Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics

    US20050167744A1

  • Power semiconductor devices and methods of manufacture

    US20060214221A1

  • Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact

    US7453119B2

  • Shielded gate trench (SGT) MOSFET devices and manufacturing processes

    US7633119B2