Organic electronic component

Abstract

Organic electronic component (100) comprising - an anode (7) - an active layer arranged above the anode (7), - an electron injection layer (2) arranged above the active layer (4) and - a cathode (1) arranged above the electron injection layer (2), wherein the electron injection layer (2) - a first organic layer (2a) comprising a first organic matrix material, - a second organic layer (2b) comprising a second organic matrix material and - a metallic layer (2c), wherein the first organic matrix material has a higher electron conductivity than the second organic matrix material, wherein the cathode (1) is arranged directly above the metallic layer (2c), wherein the metallic layer (2c) comprises a metal or consists of a metal and the second organic layer (2b) is doped at least in partial areas with the metal of the metallic layer (2c), and wherein the second organic layer (2b) has a first sub-layer (9) and a second sub-layer (10), the second sub-layer being doped with the metal of the metallic layer (2c), and the first sub-layer (9) consisting of the second organic matrix material.

Description

The invention relates to an organic electronic component and a method for producing an organic electronic component.The following publications relate to organic optoelectronic components: JP 2016-058 497 A, US 2008 / 0 231 178 A1, CN 104 638 162 A, US 2016 / 0 204 360 A1, WO 2017 / 001 353 A1, US 2011 / 0 240 971 A1.At least one object of the present invention is to specify an organic electronic component which has increased voltage stability during operation and / or storage, in particular at high temperatures. A further object is to specify a cost-effective and simple method for producing an organic electronic component.The objects are achieved by the subordinate claims. Advantageous embodiments and further developments of the present invention are specified in the dependent claims.An organic electronic component is specified. The organic electronic device includes an anode, an active layer disposed over the anode, an electron injection layer disposed over the active layer, and a cathode disposed over the electron injection layer.The term "on" or "over" with regard to the arrangement of the layers here and in the following means a principal sequence and is to be understood such that a first layer is either arranged on a second layer such that the layers have a common interface, that is to say are in direct mechanical and / or electrical contact with one another, or that further layers are arranged between the first layer and the second layer.The electron injection layer comprises a first organic layer comprising a first organic matrix material, a second organic layer comprising a second organic matrix material, and a metallic layer. Surprisingly, it has been found that organic electronic components having such an electron injection layer have a particularly high voltage stability during operation of the component and / or storage thereof, in particular also at temperatures above room temperature, for example above 100° C. By means of the electron injection layer according to the invention, efficient electron injection is thus surprisingly possible even during operation of the component at high temperatures and after storage of the component at high temperatures. If the organic electronic component is an organic light-emitting diode, this is additionally distinguished by a high light yield and good luminance stability, which is likewise attributable to the effective electron injection according to the invention into the active layer, which is in particular also very effective if the light-emitting diode is exposed to high temperatures over a relatively long period of time. Organic light-emitting diodes in particular are thus particularly suitable for use in the automotive sector, in which the organic light-emitting diodes may be exposed to higher temperatures.The first organic matrix material has a higher electron conductivity than the second organic matrix material. The first organic matrix material and the second organic matrix material are thus in particular different organic matrix materials. Due to the fact that the second organic layer of the electron injection layer is arranged between the metallic layer and the first organic layer, the electron injection is particularly effective and constant or almost constant over a longer period of time, in particular even at temperatures elevated with respect to room temperature, for example up to 150° C. If the first organic layer were directly adjacent to the metallic layer, no electron injection or almost no electron injection any longer occurs and the voltage of the component in its operation would increase considerably at the same current intensity.The fact that a layer is arranged "between" two other layers can mean here and below that the one layer is arranged directly in direct mechanical and / or electrical contact or in indirect contact with one of the two other layers and in direct mechanical and / or electrical contact or in indirect contact with the other of the two other layers. In this case, in the case of indirect contact, further layers can then be arranged between the one and at least one of the two other layers.According to at least one embodiment, the second organic layer is arranged over the first organic layer over the full surface and the metallic layer is arranged over the second organic layer over the full surface. In particular, there is no mechanical contact between the first organic layer and the metallic layer, since this can lead to a drastic reduction in the electron injection. In other words, the first organic layer and the metallic layer preferably do not have a common interface.The organic electronic component can be, for example, an organic light-emitting diode (OLED), an organic field-effect or bipolar transistor, an organic photodetector or an organic solar cell.According to at least one embodiment, the active layer is a light-emitting layer which is configured to emit radiation during operation of the component. The organic electronic component according to this embodiment is in particular an organic light-emitting diode.According to at least one embodiment, the first organic matrix material is a material that cannot be conductivity doped by a metal. This is evident, for example, in that the operating voltage of the component has a constantly low value without metal doping of the first organic layer, and no significant reduction in the operating voltage is achieved in the case of doping with a metal. Doping the first organic matrix material with a metal therefore does not lead to improved electron conductivity. For example, ETM036 from Merck or NET18 from Novaled can be selected as the first organic matrix material.According to at least one embodiment, the first organic matrix material may not be conductivity doped by a metal. That is, the electron conductivity is not improved by the metal doping.According to at least one embodiment, the second organic matrix material is a material that can be conductivity doped by a metal. This is evident, for example, in that the operating voltage of the component with a metal doping of the second organic layer has a constantly low value, while it is significantly higher in comparison thereto without doping with a metal and under certain circumstances significantly increases over time. Doping the second organic matrix material with a metal thus leads to improved electron injection. For example, ET093 from Merck or NET218 or NET382 from Novaled can be selected as the second organic matrix material.According to at least one embodiment, the second organic matrix material may be conductivity doped by a metal. This means that the electron injection is or can be improved by metal doping.According to at least one embodiment, the first organic matrix material has a high intrinsic electron conductivity. A high intrinsic electron conductivity means in particular that the voltage of the component up to a thickness of, for example, 200 nm of the first organic layer is independent or virtually independent of the thickness of the first organic layer.According to at least one embodiment, the second organic matrix material has a low intrinsic electron conductivity. A low intrinsic electron conductivity means in particular that the voltage of the component increases significantly, for example by more than 0.3 V, when the thickness of the second organic layer signal is increased significantly.According to at least one embodiment, the electron injection layer consists of the first organic layer, the second organic layer and the metallic layer. This is thus a three-layer electron-injection layer.According to at least one embodiment, the first organic layer is arranged over the active layer, in particular the light-emitting layer, the second organic layer is arranged over the first organic layer and the metallic layer is arranged over the second organic layer.The cathode is arranged directly above the metallic layer. According to this embodiment, the cathode is in direct electrical and mechanical contact with the metallic layer.According to at least one embodiment, the first organic layer is not doped with a metal. It is possible that the first organic layer consists of the first matrix material. A disadvantage has proven to be metal doping of layers in the direct vicinity of a light-emitting layer. The metal can migrate into the light-emitting layer and lead to emission extinction, which is negatively noticeable in luminance and should therefore be avoided. There is preferably a direct mechanical contact between the first organic layer and the light-emitting layer, or a direct mechanical contact between the first organic layer and an additional hole-blocking layer arranged above the light-emitting layer. Particularly preferably, the first organic layer is arranged over the whole surface of the light-emitting layer or the hole-blocking layer.According to at least one embodiment, the metallic layer has a layer thickness of between 1 nm and 10 nm inclusive, preferably between 1 nm and 4 nm. At layer thicknesses below one nanometer, the electron injection decreases and thus the voltage of the component increases at the same current intensity.According to at least one embodiment, the metallic layer comprises a metal selected from a group comprising lithium, sodium, calcium, magnesium, ytterbium, cesium, strontium, rubidium, potassium, and combinations thereof. The metallic layer may also consist of these metals.The metallic layer comprises a metal or consists of a metal and the second organic layer is doped with the metal of the metallic layer at least in partial regions. The second organic layer can thus be completely doped with the metal or only partially doped with the metal. For example, the metal can be driven partially into the second organic layer when the metal layer is applied. It is also possible for the metal (atoms or ions of the metal) to partly penetrate into the second organic layer during operation of the component. The doping can thus be effected automatically without the need for expensive and complicated deposition modules for the metal doping. Advantageously, the metal of the metal layer cannot penetrate or penetrate into the first organic layer of the electron injection layer, since the first organic matrix material forms a barrier for the penetration of the metal. As a result, the migration of the metal atoms or ions into the first organic layer and thus also into the active layer is prevented and there are no or substantially fewer trap states caused by the metal which can lead to emission extinction in the vicinity of and in the active layer, in particular the light-emitting layer. Overall, the stability, in particular the voltage and luminance stability, of the component is increased by the electron injection layer according to the invention. In particular, the stability to voltage and luminance is also maintained under storage and / or operation of the component at elevated temperatures.According to at least one embodiment, the second organic layer is fully doped with the metal of the metal layer. A concentration gradient of the doping can be present here, wherein in particular the concentration of metal in the second organic layer increases in the direction from the first organic layer to the metallic layer.The second organic layer comprises a first sublayer and a second sublayer or consists of a first and a second sublayer. The first sublayer is preferably arranged over the first organic layer and the second sublayer is arranged between the first sublayer and the metallic layer. The second sublayer comprises the second matrix material and is doped with the metal of the metallic layer. In particular, the second sublayer consists of the second matrix material and the metal of the metallic layer. In this case, a concentration gradient of the doping can be present, wherein in particular the concentration of metal in the second sub-layer increases in the direction from the first organic layer to the metallic layer. The first sublayer comprises the second organic matrix material and is in particular not doped with the metal of the metallic layer. The first sublayer can also consist of the second organic matrix material.According to at least one embodiment, the second organic layer has a layer thickness of between 2 nm and 20 nm inclusive, preferably between 2 nm and 10 nm inclusive. If the layer thickness is selected to be above 20 nm, the voltage of the component rises at the same current intensity, since the electron injection falls, as a result of which the electron injection layer would no longer fulfil its function or would only fulfil its function to a minor extent.According to at least one embodiment, the first organic layer has a layer thickness between 5 nm and 200 nm inclusive, preferably between 5 nm and 60 nm inclusive.According to at least one embodiment, a hole blocking layer is arranged between the active layer and the electron injection layer.According to at least one embodiment, the hole blocking layer comprises an organic material having a deeper-lying HOMO (highest occluded molecular orbital) than the first organic matrix material or the second organic matrix material. The hole blocking layer can thereby be distinguished from known electron transport or electron injection layers.According to at least one embodiment, the hole blocking layer comprises TMM-147, TMM-127, TMM-004, BA1q, BCP, TAZ, PBD, TPBI, spiro-TAD or consists of one of these materials.In the organic light-emitting diode, for example, the anode or the cathode can be transparent and the respective other can be reflective. The organic light-emitting diode can thus be embodied either as a bottom emitter or as a top emitter. Alternatively, the anode and the cathode can also be transparent. If both the anode and the cathode are transparent, the organic light-emitting diode can be referred to as a transparent OLED.Transparent here and in the following denotes a layer which is transmissive to visible radiation, in particular to radiation which is generated in the light-emitting layer during operation of the organic light-emitting diode. A transparent layer may be clearly translucent. Particularly preferably, a layer referred to here as transparent has the smallest possible absorption of radiation.The anode and the cathode may independently comprise a material selected from a group comprising metals, electrically conductive polymers, transition metal oxides, and transparent conductive oxides (TCO). The anode and cathode can also be layer stacks of a plurality of layers of the same or different metals or of the same or different TCOs.Suitable metals for the cathode and anode are, for example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, and compounds, combinations or alloys thereof.If the cathode is formed from a metal in the component, this metal is in particular a different metal than the metal of the metallic layer.Transparent conductive oxides ("TCO" for short) are transparent conductive materials, generally metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO). Besides binary metal oxygen compounds, such as ZnO, SnO 2 or In 2 O 3, ternary metal oxygen compounds, such as Zn 2 SnO 4, CdSnO 3, ZnSnO 3, MgIn 2 O 4, GaInO 3, Zn2In2O5or In4Sn3O12, also include, or mixtures of different transparent conductive oxides to the group of TCOs. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and can also be p- or n-doped.Suitable materials for the light-emitting layer of an organic light-emitting diode are materials which have radiation emission on the basis of fluorescence or phosphorescence. Examples of fluorescent materials are polyfluorene, polythiophene or polyphenylene or derivatives, compounds, mixtures or copolymers thereof. Phosphorescent materials which can be used are, for example, Ir(ppy) 3, Ir(MDQ) 2( acac), 07960, TER-056, TER-096, RD-004, RD-1932 and also further materials having the central ions iridium and platinum.According to at least one embodiment, the organic electronic component comprises a hole transport layer, a hole injection layer and / or an electron blocking layer. These layers are arranged in particular between the anode and the active layer. In this case, the hole-injection layer can be arranged above the anode, the hole-transport layer above the hole-injection layer and the electron-blocking layer above the hole-transport layer. Materials for the layers mentioned are known to the person skilled in the art.According to at least one embodiment, the organic electronic component has a substrate on which the cathode and / or the anode, preferably the anode, is applied. The substrate can have, for example, one or more materials in the form of a layer, a plate, a film or a laminate, which are selected, for example, from steel, glass, quartz, plastic, metal.According to at least one embodiment, an encapsulation is arranged above the anode and / or the cathode, preferably above the cathode, for example a thin-film encapsulation, which can protect the layers arranged beneath them from harmful external influences such as moisture, oxygen and other substances. Preferably, the encapsulation arrangement is in direct mechanical contact with the cathode.With regard to the basic structure of an organic electronic component, in particular an organic light-emitting diode, reference is made to the publication WO 2010 / 066245 A1, which is expressly incorporated herein by reference in particular with regard to the structure and the layer compositions.A method for producing an organic electronic component is specified. All features indicated under the organic electronic component can also be features of the method for producing the organic electronic component and vice versa.According to one embodiment, the method for producing an organic electronic component comprises the following method steps, preferably in the stated sequence:A) providing an anode,B) applying an active layer to the anode,D) applying an electron injection layer to the active layer; andE) Applying a cathode to the electron injection layer.According to at least one embodiment, step D) comprises the following method steps:D1) applying a first organic layer comprising a first organic matrix material to the active layer,D2) applying a second organic layer comprising a second organic matrix material to the first organic layer,D3) Applying a metallic layer to the second organic layer.During or in the course of method step D 3), the metal can be driven into the second organic layer. The doping can thus be effected automatically without, as is conventional, expensive and complicated deposition modules being necessary for the metal doping. As a result, the processability of the component is very simplified overall.According to at least one embodiment, a method step C): C) applying a hole blocking layer to the active layer takes place between method steps B) and D):.Further advantageous embodiments and developments of the invention are evident from the exemplary embodiments described below in connection with the figures. FIGS. 1A, 1B and 1C show schematic side views of a section of an organic electronic component. FIG. 1D shows a schematic side view of an organic light emitting diode described here. FIG. 2A shows the voltage stability of different organic light emitting diodes. FIG. 2B shows luminance stability for various organic light emitting diodes.In the exemplary embodiments and figures, identical or identically functioning components are each provided with the same reference numerals. The elements shown and their relative sizes are not to be regarded as true to scale, rather individual elements, in particular layer thicknesses, can be represented with exaggerated size for better understanding.FIG. 1A shows a schematic side view of a section of an organic electronic component, in particular an organic light-emitting diode. The section shows an electron injection layer 2 consisting of a first organic layer 2 a, a second organic layer 2 band a metallic layer 2 c. The first organic layer 2 aincludes a first organic matrix material, for example NET 18 or ETM 036, or consists of the first organic matrix material The second organic layer 2 bis arranged over the entire surface of the first organic layer 2 a. The second organic layer 2 bincludes a second organic matrix material, for example NET 218, ET 093 or NET 382. The first organic layer 2a has a layer thickness between 5 nm and 200 nm inclusive and the second organic layer 2b has a layer thickness between 2 nm and 20 nm inclusive. Over the second organic layer 2 b, a metallic layer 2 cis arranged over the entire surface. The metallic layer 2c is made of calcium, for example, and has a layer thickness between 1 nm and 10 nm inclusive. The second organic layer 2 bmay be doped, at least in partial regions, with the metal of the metallic layer 2 c(not shown). In this case, the metal of the metal layer 2 cmay be driven into the second organic layer 2 bwhen the metallic layer 2 cis applied. The electron conductivity of the second organic matrix material can thus advantageously be increased. It is also possible for the metal (atoms or ions of the metal) to migrate partly into the second organic layer 2 bduring the operation of the component. Advantageously, the metal of the metal layer cannot penetrate into the first organic layer 2 aof the electron injection layer 2, since the first organic matrix material, i.e. for example NET 18 or ETM 036, forms a barrier for the penetration of the metal. As a result, the migration of the metal atoms or ions into the first organic layer is suppressed or virtually suppressed, and there are no or substantially fewer metal atoms or ions present in the vicinity of the active layer and in the active layer (not shown here), in particular of the light-emitting layer, which can lead to emission extinction. A cathode 1 is disposed over the electron injection layer 2. The cathode 1 may be formed of Al or Ag, for example.The section of an organic electronic component, in particular an organic light emitting diode, according to FIG. 1B has a hole blocking layer 3 in comparison with the section from FIG. 1A, above which the electron injection layer 2 and the cathode 1 are arranged. For example, the hole blocking layer comprises TMM-147, TMM-127, TMM-004, BA1q, BCP, TAZ, PBD, TPBI, spiro-TAD or consists of one of these materials.The second organic layer 2 bof the section of an organic electronic component, in particular an organic light emitting diode, according to FIG. 1C has a first sublayer 9 and a second sublayer 10 in comparison to the section from FIG. 1A. The first sublayer 9 is arranged over the first organic layer 2 aand the second sublayer 10 is arranged between the first sublayer 9 and the metallic layer 2 c. The second sublayer 10 comprises the second matrix material and is doped with the calcium of the metallic layer 2c. In particular, the second sublayer 10 consists of the second matrix material and the calcium. A concentration gradient of the doping can be present here, wherein in particular the concentration of calcium in the second sub-layer 10 increases in the direction from the first organic layer 2 ato the metallic layer 2 c. The first sublayer 9 comprises the second organic matrix material and is not doped with the metal of the metallic layer 2c. The first sublayer 9 can also consist of the second organic matrix material.FIG. 1D shows an example of an organic electronic component, in particular an organic light-emitting diode. The light emitting diode comprises a substrate 8, for example a glass substrate. An anode 7 is arranged above the substrate 8. The anode 7 is made of, for example, ITO (indium tin oxide) and is transparent. On the anode 7 is disposed a hole injection layer 6. A hole transport layer 5 is arranged above the hole injection layer 6. A light-emitting layer 4 is arranged above the hole-transport layer 5. The hole injection layer 6 may comprise, for example, TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine) and the hole transport layer NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine). The light emitting layer 4 may include, for example, a polyfluorene or an iridium compound. Between the hole transport layer 5 and the light emitting layer 4, an electron blocking layer comprising, for example, 2,2'-bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluorene may be arranged (not shown here). An electron injection layer 2 is arranged over the entire surface of the light-emitting layer 4, over which a cathode 1, for example made of Al, is arranged in turn. The electron injection layer 2 is formed as shown in FIG. 1A or 1C. Advantageously, the first organic layer 2 aconstitutes a barrier for the metal of the metallic layer. As a result, there are no or almost no metal atoms or ions in the vicinity of the light-emitting layer 4 and in particular in the light-emitting layer 4, which metal atoms or ions can lead to emission extinction. This advantageously allows a high light yield and good luminance stability of the light-emitting diode to be achieved. A thin film encapsulation of, for example, aluminum oxide may be arranged above the cathode 1 (not shown here). The materials given for the substrate 8, the anode 7, the hole injection layer 6, the hole transport layer 5, the light emitting layer 4, the electron blocking layer, and the thin film encapsulant are not limited to these materials. Rather, other materials known to the skilled person can also be used for these layers.In the graph of FIG. 2A, the normalized voltage V(t) / V(t=0) is plotted against the storage time t in hours h of an organic light emitting diode at a temperature of 105° C. The curves with the reference symbols SR 1, SR 3 and SR 4 show the voltage instabilities for comparative examples of organic light-emitting diodes R 1, R 3 and R 4, and the curves with the reference symbols SE 1 and SE 2 show the voltage instabilities for organic light-emitting diodes E 1 and E 2 according to the invention.The light-emitting diodes R1, R3, R4, E1 and E2 are of identical construction except for the electron-injection layers. In this case, the light-emitting diode R 1 has a single-layer electron-injection layer consisting of an organic matrix material doped with an organic dopant, and the light-emitting diodes R 3 and R 4 each have a single-layer electron-injection layer consisting of an organic matrix material doped with a metal. The light-emitting diodes SE 1 and SE 2 according to the invention each have a three-layer electron-injection layer. The three-layer electron injection layer of the light emitting diodes SE 1 and SE 2 consists of a first organic layer, a second organic layer and a metallic layer. The first organic matrix material has a higher electron conductivity than the second organic matrix material.As can be seen, the voltage of the organic light-emitting diodes E 1 and E 2 according to the invention is constant or virtually constant, with the result that the organic light-emitting diodes E 1 and E 2 according to the invention have the best voltage stability when stored at a temperature of 105° C.In the graph of FIG. 2B, the normalized luminance L(t) / L(t=0) is plotted against the storage time t in hours h of an organic light emitting diode at 105° C. The curve with the reference symbols LR 1, LR 3 and LR 4 show the luminance instabilities for comparative examples of organic light-emitting diodes R 1, R 3 and R 4, and the curves with the reference symbols LE 1 and LE 2 show the luminance instabilities for organic light-emitting diodes E 1 and E 2 according to the invention. The light-emitting diodes are constructed as described under FIG. 2A.As can be seen, the luminance of the organic light-emitting diodes E 1 and E 2 according to the invention is constant or virtually constant, with the result that the organic light-emitting diodes E 1 and E 2 according to the invention have the best luminance stability.List of reference charactersV voltage / voltage t time h hour L luminous flux / lumen SR1 voltage stability SR3 voltage stability SR4 voltage stability SE1 voltage stability SE2 voltage stability LR1 luminance stability LR3 luminance stability LR4 luminance stability LE1 luminance stability LE2 luminance stability R1, R3, R4 light-emitting diodes E1, E2 light-emitting diodes 100 according to the invention organic electronic component 1 cathode 2 electron-injection layer 2a first organic layer 2b second organic layer 2c metallic layer 3 hole-blocking layer 4 light-emitting layer 5 hole-transport layer 6 hole-injection layer 7 anode 8 substrate 9 first sublayer 10 second sublayer

Claims

Organic electronic component (100) comprising - an anode (7) - an active layer arranged above the anode (7), - an electron injection layer (2) arranged above the active layer (4) and - a cathode (1) arranged above the electron injection layer (2), wherein the electron injection layer (2) - has a first organic layer (2a) comprising a first organic matrix material, - a second organic layer (2b) comprising a second organic matrix material and - a metallic layer (2c), wherein the first organic matrix material has a higher electron conductivity than the second organic matrix material, wherein the cathode (1) is arranged directly above the metallic layer (2c), wherein the metallic layer (2c) comprises a metal or consists of a metal and the second organic layer (2b) is doped with the metal of the metallic layer (2c) at least in partial regions, and wherein the second organic layer (2b) has a first sublayer (9) and a second sublayer (10), and the second sublayer is doped with the metal of the metallic layer (2c), and the first sublayer (9) consists of the second organic matrix material.The organic electronic device (100) according to claim 1, wherein the electron injection layer (2) is composed of the first organic layer (2a), the second organic layer (2b), and the metallic layer (2c).Organic electronic component (100) according to one of the preceding claims, wherein the first organic layer (2a) is arranged over the active layer (4), the second organic layer (2b) is arranged over the first organic layer (2a) and the metallic layer (2c) is arranged over the second organic layer (2b).Organic electronic component (100) according to one of the preceding claims, wherein the metallic layer (2c) has a layer thickness between 1 nm and 10 nm inclusive, preferably between 1 nm and 4 nm inclusive.The organic electronic device (100) of any of the preceding claims, wherein the metallic layer (2c) comprises or consists of a metal selected from a group comprising Li, Ca, Mg, Yb, Na, Cs, Sr, Rb, K and combinations thereof.Organic electronic component (100) according to one of the preceding claims, wherein the second organic layer (2b) has a layer thickness between 2 nm and 20 nm inclusive, preferably between 2 nm and 10 nm inclusive.Organic electronic component (100) according to one of the preceding claims, wherein the first organic layer (2a) has a layer thickness between 5 nm and 200 nm inclusive, preferably between 5 nm and 60 nm inclusive.Organic electronic component (100) according to one of the preceding claims, wherein a hole blocking layer (3) is arranged between the active layer (4) and the electron injection layer (2).Organic electronic component (100) according to one of the preceding claims, wherein the hole blocking layer (3) comprises an organic material which has a lower HOMO than the first organic matrix material and / or the second organic matrix material.Organic electronic component (100) according to one of the preceding claims, wherein the active layer is a light-emitting layer (4) which is configured to emit radiation during operation of the component.Method for producing an organic electronic component (100) according to one of Claims 1 to 10, comprising the steps A) providing an anode (7), B) applying an active layer (4) to the anode (7), D) applying an electron injection layer (2) to the active layer, and E) applying a cathode (1) to the electron injection layer (2), wherein step D) comprises the following steps: D1) applying a first organic layer (2a) comprising a first organic matrix material to the active layer, D2) applying a second organic layer (2b) comprising a second organic matrix material to the first organic layer (2a), D3) applying a metallic layer (2c) to the second organic layer (2b).

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