Semiconductor device

Abstract

Semiconductor device comprising: a heat sink (1); an insulating substrate (4) arranged above the heat sink (1); a semiconductor element (5) arranged above the insulating substrate (4); a resin housing (10) wherein the housing surrounds an upper surface of the heat sink (1), the insulating substrate (4) and the semiconductor element (5); and an electrode (6, 8) having a partial region within an inner region defined by the housing (10), wherein the electrode is electrically connected to the semiconductor element (5) at a surface of the partial region by a wire (7, 9), wherein a resin part (10a, 10b) is provided in the partial region of the electrode (6, 8) within the inner region defined by the housing (10) in contact with another surface with respect to a position at which the wire (7, 9) is connected, wherein the resin part (10a,10b) extends from an inner wall of the housing (10) to the upper surface of the heat sink (1), and wherein in the portion of the electrode (6, 8) within the inner area defined by the housing (10) in contact with the other surface with respect to a position where the wire (7, 9) is not connected, a heat conductor (11, 12) is provided, wherein the heat conductor (11, 12) has a higher thermal conductivity than the resin part (10a, 10b).

Description

Background of the invention; Field of the invention

[0001] The present invention relates to semiconductor devices. Description of the state of the art

[0002] Semiconductor devices have been used in various fields, ranging from the generation and transmission of electrical energy to the efficient use and reproduction of energy. Such a semiconductor device comprises an insulating substrate with a current-circuit pattern on a heat sink and a semiconductor element, such as a current-circuit element, on the current-circuit pattern. The current-circuit pattern is connected by wires to one of the electrodes, which has a terminal for an external electrical connection. The semiconductor element is further connected by a wire to the other electrode. These electrodes are enclosed in a resin housing. Additionally, thermal conductors are arranged between the heat sink and one of the electrodes, and between the two electrodes (see, for example, published Japanese patent application no. 2010-45399).

[0003] The published Japanese patent application No. 2010-45399 describes a structure that improves heat dissipation properties by using a heat conductor to transfer heat generated in electrodes to a heat sink. Unfortunately, if the stiffness of the heat conductor, indicated by its Young's modulus and lateral elasticity, is lower than that of a housing, vibrations during ultrasonic wire bonding do not propagate sufficiently to the electrodes, leading to a deterioration of the bond properties between the electrodes and the wires. Summary of the invention

[0004] It is an object of the present invention to provide a technique for improving heat dissipation properties when dissipating heat generated in an electrode to a heat sink without impairing bond properties between the electrode and a wire.

[0005] The semiconductor device according to one aspect of the present invention comprises a heat sink, an insulating substrate, a semiconductor element, a resin housing, and an electrode. The insulating substrate is arranged above the heat sink. The semiconductor element is arranged above the insulating substrate. The resin housing surrounds an upper surface of the housing, the insulating substrate, and the semiconductor element. The electrode has a portion within an inner region defined by the housing and is electrically connected to the semiconductor element by a wire at a surface of the portion. Within the portion of the electrode within the inner region defined by the housing, a resin portion is provided at another surface relative to the position where the wire is connected, the resin portion extending from an inner wall of the housing to the upper surface of the heat sink.In the part of the electrode within the inner area defined by the housing, a heat conductor is provided on a different surface with reference to a position where the wire is not connected, wherein the heat conductor has a higher thermal conductivity than the resin part.

[0006] Within the portion of the electrode defined by the housing's inner area, a resin component is provided on the opposite surface, relative to the wire's connection point. This resin component extends from the housing's inner wall to the upper surface of the heat sink. Furthermore, within the portion of the electrode defined by the housing's inner area, a heat conductor with higher thermal conductivity than the resin component is provided on the opposite surface, relative to the wire's non-connection point. This arrangement improves heat dissipation by transferring heat generated in the electrode to the heat sink without impairing the bond between the electrode and the wire.

[0007] These and other tasks, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when viewed in conjunction with the accompanying drawings. Brief description of the drawings

[0008] Fig. Figure 1 is a cross-sectional view of partial areas of a semiconductor device according to a first preferred embodiment in which wires are not connected;

[0009] Fig. 2 is a cross-sectional view of partial areas of the semiconductor device according to the first preferred embodiment, in which the wires are connected;

[0010] Fig. Figure 3 is a perspective view of partial areas of electrodes of the semiconductor device according to the first preferred embodiment within an inner area defined by a housing;

[0011] Fig. Figure 4 is a cross-sectional view of a semiconductor device according to a second preferred embodiment;

[0012] Fig. Figure 5 is a bottom view of an embossed surface in an electrode of the semiconductor device according to the second preferred embodiment;

[0013] Fig. 6 and Fig. 7 are bottom views of the embossed surface in the electrode of the semiconductor device according to the second preferred embodiment;

[0014] Fig. Figure 8 is a cross-sectional view of a semiconductor device according to a third preferred embodiment, which is used for Fig. 1 corresponds; and

[0015] Fig. Figure 9 is a cross-sectional view of the semiconductor device according to the third preferred embodiment, which is used for Fig. 4 corresponds. Description of preferred embodiments<Erste bevorzugte Ausführungsform>

[0016] The following describes a first preferred embodiment of the present invention with reference to the drawings. Fig. Figure 1 is a cross-sectional view of partial areas of a semiconductor device according to the first preferred embodiment, in which wires 7 and 9 are not connected. Fig. Figure 2 is a cross-sectional view of parts of the semiconductor device in which the wires 7 and 9 are connected. Fig. Figure 3 is a perspective view of partial areas of electrodes 6 and 8 within a housing 10 defined inner area.

[0017] As in Fig. 1 to Fig. As shown in 3, the semiconductor device has a heat sink 1 , an insulating substrate 4 , a semiconductor element 5 , the electrode 6 , the electrode 8 and the case 10on. The heat sink 1 It consists of a metal with high thermal conductivity, such as copper. The insulating substrate 4 is above the upper surface of the heat sink 1 arranged. The insulating substrate 4 exhibits a current circuit pattern 2 and a current circuit pattern 3 on, which are arranged on its upper surface and its lower surface. The insulating substrate 4 The semiconductor element also exhibits 5 , like a current switching element, above its upper surface, with the current switching pattern 2 between the insulating substrate 4 and the semiconductor element 5 is embedded.

[0018] The housing, which is made of resin 10 is with the outline of the upper surface of the heat sink 1 connected and surrounds an upper surface of the heat sink 1, the insulating substrate 4 and the semiconductor element 5 The casing 10 It is also filled with, for example, a silicon gel (not shown).

[0019] The electrodes 6 and 8 are in the case 10 included. The electrode 8 has a connection 8a on, which is an electrical connecting part that is electrically connected to the outside. Similarly, the electrode has 6 a connection (in Fig. 1 and Fig. 2 (not shown) which is an electrical connecting part that is electrically connected to the outside. The electrode 8 exhibits a partial area within a housing 10 defined inner area and is through the wires 9 electrically with an upper electrode (not shown) of the semiconductor element 5connected in a part of a surface, i.e. the upper surface of this sub-area.

[0020] The electrode 6 exhibits a partial area within the area defined by the housing 10 defined inner area and is through the wires 7 electrically with the current circuit pattern 2 connected in a part of a surface, i.e., the upper surface of this sub-area. The current circuit pattern is... 2 with a lower electrode (not shown) of the semiconductor element 5 connected. In other words, the electrode is 6 through the wires 7 electrically with the semiconductor element 5 in a part of the upper surface of the sub-area within the housing 10 connected to a defined inner area.

[0021] Here, the sub-areas of the electrodes are 6 and 8 within the housing 10defined inner area the ends of horizontal sub-areas of the electrodes 6 and 8 opposite the connection 8a (hereinafter referred to simply as "horizontal sub-areas"). In Fig. 1 to Fig. 3 are the wires 7 and 9 each with the front parts and rear parts of the upper surfaces of the electrode sub-areas 6 and 8 within the housing 10 connected to a defined area. In Fig. 1 to Fig. 3 are the wires 7 and 9 none of these sub-areas are connected to the central parts.

[0022] As in Fig. 2 and Fig. As shown in section 3, this is in the sub-area of ​​the electrode. 8 within the housing 10 defined inner area on the other surface, i.e. the lower surface with reference to a position where the wires 9are connected, a resin part 10b provided for, whereby the resin part 10b from an inner wall of the housing 10 to the upper surface of the heat sink 1 extends. As in Fig. 1 to Fig. As shown in section 3, this is in the sub-area of ​​the electrode. 8 within the housing 10 defined inner area on the lower surface with reference to a position where the wires 9 are not connected, a heat conductor 12 provided for, whereby the heat conductor 12 exhibits a higher thermal conductivity than the resin part 10b .

[0023] As in Fig. 2 and Fig. As shown in section 3, this is in the sub-area of ​​the electrode. 6 within the housing 10 defined inner area on the other surface, i.e. the lower surface with reference to a position where the wires 7are connected, a resin part 10a provided for, whereby the resin part 10a from the inner wall of the case 10 to the upper surface of the heat sink 1 extends. As in Fig. 1 and Fig. As shown in section 3, this is in the sub-area of ​​the electrode. 6 within the housing 10 defined inner area on the lower surface with reference to a position where the wires 7 are not connected, a heat conductor 11 provided for, whereby the heat conductor 11 exhibits a higher thermal conductivity than the resin part 10a As in Fig. The section of the electrode shown in 1 is 6 within the housing 10 defined area longer than the sub-area of ​​the electrode 8 within the housing 10 defined inner area. Furthermore, the heat conductor 11partially inside the case 10 bordered.

[0024] The following describes an effect of the semiconductor device according to the first preferred embodiment. A conventional semiconductor device is structured such that the thermal conductors are arranged over the entire lower surface of the electrode sub-regions within an inner area defined by a housing. Unfortunately, if the stiffness of the thermal conductors, indicated by a Young's modulus and a modulus of lateral elasticity, is less than that of the housing, vibrations during ultrasonic bonding of wires do not propagate sufficiently to the electrodes, leading to a deterioration of the bond properties between the electrodes and the wires.

[0025] In contrast to the conventional semiconductor device, the semiconductor device according to the first preferred embodiment is designed such that in the partial areas of the electrodes 6 and 8 within the housing 10 defined inner area on the lower surfaces with reference to the positions where the wires 7 and 9 are not connected, the heat conductors 11 and 12 are provided, whereby the heat conductors 11 and 12 the higher thermal conductivity than the resin parts 10a and 10b exhibiting such an arrangement improves heat dissipation properties when heat is dissipated in the electrodes. 6 and 8 generated heat to the cooling element 1 The semiconductor device according to the first preferred embodiment is also arranged such that in the partial areas of the electrodes 6 and8 within the inner area defined by the housing on the lower surfaces with reference to the positions where the wires 7 and 9 are connected, the resin parts 10a and 10b are provided, whereby the resin parts 10a and 10b each from the inner wall of the housing 10 to the upper surface of the heat sink 1 extend. Such an arrangement allows these points to have the same stiffness as the housing. Consequently, vibrations during ultrasonic bonding of the wires easily propagate to the electrodes, thus preventing a deterioration of the bond properties between the electrodes. 6 and 8 and the wires 7 and 9 to minimize.

[0026] As a consequence, the heat dissipation properties are affected when the heat is dissipated in the electrodes. 6 and 8generated heat to the cooling element 1 improved, without affecting the bonding properties between the electrodes 6 and 8 and the wires 7 and 9 to deteriorate. Furthermore, the bonding properties between the electrodes will be impaired. 6 and 8 and the wires 7 and 9 It does not deteriorate. This ensures long-term use of the semiconductor device. <Zweite bevorzugte Ausführungsform>

[0027] The following describes a semiconductor device according to a second preferred embodiment. Fig. Figure 4 is a cross-sectional view of the semiconductor device according to the second preferred embodiment. In the second preferred embodiment, the same components as those described in the first preferred embodiment are identified by the same reference numerals. A description of these identical components is therefore not provided.

[0028] In the second preferred embodiment, the other surfaces, i.e., the lower surfaces of the sub-areas of the electrodes, are 6 and 8 within the housing 10 uneven embossed surfaces in the defined inner area 13 and 14 The embossing surfaces are planned. More precisely, the embossing surfaces are... 13 and 14 not only in the sub-areas of the electrodes 6 and 8 within the housing 10defined inner area but also on the lower surfaces of the entire horizontal sub-areas, including the sub-areas located in the housing 10 are embedded.

[0029] Inside the case 10 are uneven areas 10c and 10d provided at respective positions that correspond to the lower surfaces of the horizontal sub-areas of the electrodes 6 and 8 including the resin parts 10a and 10b correspond. The uneven sub-areas 10c and 10d are each embedded in the embossed surfaces 13 and 14 fitted.

[0030] The following describes the embossing surfaces in detail. 13 and 14 . Fig. Figure 5 is a bottom view of the embossed surface. 13 the electrode 6 of the semiconductor device according to the second preferred embodiment. Fig. 6 and Fig. 7 are other underside views of the embossed surface 13 the electrode 6 of the semiconductor device according to the second preferred embodiment. The embossing surface 13 the electrode 6 is essentially the same as the embossed surface 14 the electrode 8 Accordingly, the description of the embossed surface is as follows. 13 the electrode 6 submitted.

[0031] As in Fig. As shown in section 5, the embossed surface has 13 a lower surface 13a of the horizontal section of the electrode 6 and a ring-shaped protrusion 13b on the lower surface 13a up. As in Fig. As shown in figure 6, the embossing surface can be 13 the lower surface 13a of the horizontal section and straight projections 13bin two directions that intersect each other. Furthermore, as in Fig. 7 shows the embossed surface 13 the lower surface 13a of the horizontal section and projections 13b exhibit the corners 13c exhibit and are triangular in a side view. In Fig. 5 to Fig. 7 can the unevenness of the embossed surface 13 be reversed.

[0032] As described above, the semiconductor device according to the second preferred embodiment is arranged such that the lower surfaces of the sub-areas of the electrodes 6 and 8 within the housing 10 The defined inner area is uneven. The semiconductor device according to the second preferred embodiment is also configured such that the lower surfaces of the electrode sub-areas are uneven. 6 and 8 within the housing10 defined inner area the resin parts 10a and 10b are provided for, whereby the resin parts 10a and 10b each from the inner wall of the housing 10 to the upper surface of the heat sink 1 extend and each of the uneven sub-areas 10c and 10d exhibiting features that extend into the lower surfaces of the electrode sub-areas 6 and 8 are fitted.

[0033] Such an arrangement increases the contact area between the sub-areas of the electrodes. 6 and 8 within the housing 10 defined inner area and the resin parts 10a and 10b Thus, the coefficient of heat exchange between these sub-areas of the electrodes increases. 6 and 8 and the resin parts 10a and 10b, thus enabling heat exchange between these parts of the electrodes 6 and 8 and the resin parts 10a and 10b to promote heat generated by the electrodes 6 and 8 The transfer is facilitated by a contact surface and a bonding surface between the housing. 10 and the heat sink 1 to the heat sink 1 derived. Thus, heat dissipation properties for the electrodes are determined. 6 and 8 improved. Furthermore, the heat conductors are 11 and 12 not on the lower surfaces of the electrodes 6 and 8 within the housing 10 A defined inner area is provided. Such an arrangement influences bonding properties between the electrodes. 6 and 8 and the wires 7 and 9No. This improves the heat dissipation properties when dissipating heat from the electrodes. 6 and 8 generated heat to the cooling element 1 , without the bonding properties between the electrodes 6 and 8 and the wires 7 and 9 to worsen.

[0034] In particular, the thermal design of the semiconductor device is generally simple if the electrodes 6 and 8 Main electrodes are those whose heat generation is greater than that of other connections such as plug connectors.

[0035] As in the first preferred embodiment, the semiconductor device can be arranged such that in the sub-areas of the electrodes 6 and 8 within the housing 10 defined inner area on the lower surfaces with reference to the positions where the wires 7 and9 are not connected, the heat conductors 11 and 12 are planned. Provision of the individual heat conductors 11 and 12 with uneven sub-areas that are incorporated into the embossed surfaces 13 and 14 This structure is fitted in such a way that the heat dissipation properties of the electrodes are achieved. 6 and 8 generated heat to the cooling element 1 improved, without affecting the bonding properties between the electrodes 6 and 8 and the wires 7 and 9 to worsen as in the above case. <Dritte bevorzugte Ausführungsform>

[0036] The following describes a semiconductor device according to a third preferred embodiment. Fig. Figure 8 is a cross-sectional view of the semiconductor device according to the third preferred embodiment, which is to Fig. 1 corresponds. Fig. Figure 9 is a cross-sectional view of the semiconductor device according to the third preferred embodiment, which is used for Fig. 4 corresponds. In the third preferred embodiment, the same components as those described in the first and second preferred embodiments are identified by the same reference numerals. A description of these same components is therefore not provided.

[0037] As in Fig. 8 and Fig. As shown in 9, the semiconductor device according to the third preferred embodiment has an insulating substrate. 15 , the lower part of which has a heat dissipation section 15a instead of the heat sink 1 features, and an insulating substrate 4 on, as described in the first and second embodiments. The insulating substrate 15is an integrated insulating substrate and features a heat dissipation section 15a in its lower part and an insulating sub-area 15b in its upper part. The current circuit pattern 2 is on the upper surface of the insulating sub-area 15b arranged. The insulating substrate 15 It consists of an insulating material with good heat dissipation properties. More precisely, the insulating substrate consists of 15 made from a material with high thermal conductivity, such as resin or ceramic. Fig. Figure 8 represents the semiconductor device according to the first preferred embodiment with the insulating substrate 15 This is intended. Fig. 9 represents the semiconductor device according to the second preferred embodiment with the insulating substrate 15 This is intended.

[0038] As described above, the semiconductor device according to the third preferred embodiment has the insulating substrate 15 , the lower part of which is the heat dissipation section 15a instead of the heat sink 1 exhibits, and the insulating substrate 4 This results in the preparation of insulating substrates. 15 with combinations of different heat dissipation sub-areas 15a and various insulating sub-areas 15b , an optimal insulating substrate 15 in accordance with the size of the semiconductor element 5 and to select one with the necessary heat dissipation properties. This offers a wide range of designs in terms of size and heat dissipation characteristics of the semiconductor element. 5 .

[0039] It should be noted that, within the scope of the present invention, the individual preferred embodiments can be freely combined or suitably modified and omitted.

[0040] Although the invention has been shown and described in detail, the foregoing description is descriptive in all aspects and not limiting. It is therefore understood that numerous modifications and variations can be designed without departing from the scope of the invention.

[0041] In summary, a technique is provided for improving heat dissipation properties by transferring heat generated in an electrode to a heat sink without impairing the bonding properties between the electrode and a wire. A semiconductor device includes a heat sink. 1 , an insulating substrate 4 , a semiconductor element 5, a resin casing 10 and an electrode 6 , 8 , which are a sub-area within a space enclosed by the housing 10 The semiconductor device has a defined inner area. In this sub-area of ​​the electrode, the semiconductor device is located in the following section. 6 , 8 within the housing 10 defined inner area on a surface, i.e. the lower surface with reference to a position where a wire 7 , 9 is connected to a resin part 10a , 10b provided for, wherein the resin part is separated from an inner wall of the housing 10 to an upper surface of the heat sink 1 extends. Furthermore, in that section of the electrode... 6 , 8 within the housing 10 defined inner area on a surface, i.e. the lower surface with reference to a position where the wire 7 , 9is not connected, a thermal conductor 11 , 12 provided for, wherein the thermal conductor 11 , 12 exhibits a higher thermal conductivity than the resin part 10a , 10b . Reference symbol list 1 heat sink 2, 3 Current circuit patterns 4 insulating substrate 5 Semiconductor element 6 electrode 7 wire 8 electrode 8a connection 9 wire 10 cases 10a, 10b resin part 10c, 10d uneven section 11, 12 Heat conductors 13 Embossing surface 13a lower surface 13b ring-shaped protrusion 13c corner 14 Embossing surface 15 insulating substrate 15a Heat dissipation section QUOTES INCLUDED IN THE DESCRIPTION

[0042] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0043] JP 2010-45399 [0002, 0003]

Claims

[1] Semiconductor device comprising: a heat sink ( 1 ); an insulating substrate ( 4 ), which is above the heat sink ( 1 ) is arranged; a semiconductor element ( 5 ), which is above the insulating substrate ( 4 ) is arranged; a housing made of resin ( 10 ), wherein the housing forms an upper surface of the heat sink ( 1 ), the insulating substrate ( 4 ) and the semiconductor element ( 5 surrounds; and an electrode ( 6 , 8 ), which encompass a sub-area within a space enclosed by the housing ( 10 ) defined inner area, wherein the electrode is connected to a surface of the sub-area by a wire ( 7 , 9 ) electrically with the semiconductor element ( 5 ) is connected, where in the sub-area of ​​the electrode ( 6 , 8) within the housing ( 10 ) defined inner area on another surface with reference to a position where the wire ( 7 , 9 ) is connected, a resin part ( 10a , 10b ) is provided, whereby the resin part ( 10a , 10b ) from an inner wall of the housing ( 10 ) to the upper surface of the heat sink ( 1 ) extends, and where in the sub-area of ​​the electrode ( 6 , 8 ) within the housing ( 10 ) defined inner area on another surface with reference to a position where the wire ( 7 , 9 ) is not connected, a heat conductor ( 11 , 12 ) is provided, wherein the heat conductor ( 11 , 12 ) has a higher thermal conductivity than the resin part ( 10a , 10b ). [2] Semiconductor device comprising: a heat sink ( 1 ); an insulating substrate ( 4 ), which is above the heat sink ( 1 ) is arranged; a semiconductor element ( 5 ), which is above the insulating substrate ( 4 ) is arranged; a housing made of resin ( 10 ), wherein the housing forms an upper surface of the heat sink ( 1 ), the insulating substrate ( 4 ) and the semiconductor element ( 5 surrounds; and an electrode ( 6 , 8 ), which encompass a sub-area within a space enclosed by the housing ( 10 ) defined inner area, wherein the electrode is connected to a surface of the sub-area by a wire ( 7 , 9 ) electrically with the semiconductor element ( 5 ) is connected, where another surface of the sub-area of ​​the electrode ( 6 ,8 ) within the housing ( 10 ) defined inner area is uneven, and where on the other surface of the sub-area of ​​the electrode ( 6 , 8 ) within the housing ( 10 ) defined inner area a resin part ( 10a , 10b ) is provided, whereby the resin part ( 10a , 10b ) from an inner wall of the housing ( 10 ) to the upper surface of the heat sink ( 1 ) extends and includes an uneven sub-area ( 13 , 14 ) exhibits a surface that is fitted into the other surface of the sub-area. [3] Semiconductor device according to claim 2, wherein the electrode comprises a main electrode. [4] Semiconductor device according to any one of claims 1 to 3, comprising an insulating substrate ( 15 ) has a lower part which contains a heat dissipation section ( 15a ) instead of the heat sink (1 ) and the insulating substrate ( 4 ) exhibits.

Images