OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT

Abstract

Optoelectronic component (1) comprising: - a radiation-emitting semiconductor chip (2) comprising an electrical contact (3), - a substrate (4) comprising an electrically conductive coating (5) on which the radiation-emitting semiconductor chip (2) with the electrical contact (3) is arranged, - a contact means (6) connecting the electrically conductive coating (5) of the substrate (4) and the electrical contact (3) of the semiconductor chip (2), and - a passivation layer (7) arranged locally on the electrically conductive coating (5), wherein - an outer surface of the electrically conductive coating (8) is completely encapsulated by the passivation layer (7) and the contact means (6), - the passivation layer (7) has a breakthrough (9) so that a contact point (10) of the electrically conductive coating (5) is accessible, - the breakthrough (9) is completely filled with the contact means (6),- the contact medium (6) extends beyond the breakthrough (9) in a lateral direction, and - the radiation-emitting semiconductor chip (2) is a flip chip.

Description

[0001] An optoelectronic component is specified. In addition, a method for producing an optoelectronic component is specified.

[0002] One problem to be solved is to specify an optoelectronic component that is particularly efficient and stable to aging. In addition, a method for producing such an optoelectronic component is to be specified.

[0003] These objects are achieved by an optoelectronic component having the features of patent claim 1 and by a method having the steps of patent claim 14.

[0004] Advantageous embodiments of the optoelectronic component and of the method for producing the optoelectronic component are the subject of the respective dependent claims.

[0005] In accordance with at least one embodiment, the optoelectronic component includes a radiation-emitting semiconductor chip, which includes an electrical contact. The radiation-emitting semiconductor chip is designed to emit electromagnetic primary radiation via a radiation exit area during operation. The primary electromagnetic radiation can be, for example, near-ultraviolet radiation, visible light and / or near-infrared radiation.

[0006] The radiation-emitting semiconductor chip can be a surface emitter, for example, in which the emitted primary radiation exits for the most part, for example more than 80% of a radiation power, via the radiation exit area that is encompassed by a first main area of ​​the radiation-emitting semiconductor chip.

[0007] The surface emitter can be a thin-film chip, for example. Thin-film chips generally have an epitaxially grown semiconductor layer sequence with an active zone that generates primary radiation and is applied to a different carrier element than the growth substrate for the semiconductor layer sequence. A mirror layer is particularly preferably arranged between the semiconductor layer sequence and the carrier element, which reflects the primary radiation of the active zone to the first main area. Thin-film chips generally do not emit the primary electromagnetic radiation that is generated in the active zone during operation via the side surfaces of the carrier element, but instead have an essentially Lambertian emission characteristic. For example, the thin-film chip has an electrical contact on the first main area.

[0008] Furthermore, the radiation-emitting semiconductor chip can be a substrate-less semiconductor chip that is free of a carrier element and a growth substrate. For example, the substrate-less semiconductor chip has a thickness of between 5 micrometers and 50 micrometers inclusive.

[0009] Furthermore, the radiation-emitting semiconductor chip can be a volume-emitting semiconductor chip which emits the emitted primary radiation not only via the first main area but also via at least one side area. For example, in the case of a volume-emitting semiconductor chip, at least 30% of the radiation power of the emitted primary radiation exits through the at least one side surface.

[0010] A volume-emitting semiconductor chip preferably has a substrate on whose first main surface a semiconductor layer sequence with an active zone, which generates the primary electromagnetic radiation during operation, has usually grown epitaxially. The substrate can, for example, have one of the following materials or consist of one of the following materials: sapphire, silicon carbide. If the substrate is a sapphire substrate, then two electrical contacts of the volume-emitting semiconductor chip are preferably arranged on the first main surface of the semiconductor chip. The volume-emitting semiconductor chip can be electrically contacted, for example by means of bonding wires via the two electrical contacts.

[0011] For example, the volume-emitting semiconductor chip can be a flip chip. As a rule, two electrical contacts are arranged on the second main area of ​​the substrate of the flip chip, which are provided for electrically contacting the semiconductor chip. The two electrical contacts are spaced apart from one another in the lateral direction.

[0012] In accordance with at least one embodiment, a second main area of ​​the radiation-emitting semiconductor chip, which is opposite the first main area, has the electrical contact. The electrical contact preferably has or consists of a metal. The metal preferably includes one of the following materials: copper, gold, platinum, titanium.

[0013] In accordance with at least one embodiment, the radiation-emitting semiconductor chip can be surface-mounted.

[0014] In accordance with at least one embodiment, the optoelectronic component comprises a carrier which comprises an electrically conductive coating and on which the radiation-emitting semiconductor chip with the electrical contact is arranged. Furthermore, the carrier comprises a carrier plate on which the electrically conductive coating is arranged. The support plate is formed from or consists of a metallic and / or ceramic material, for example. The carrier is or includes, for example, a circuit board or a lead frame.

[0015] According to one embodiment, the electrically conductive coating forms an outer surface of the carrier facing the radiation-emitting semiconductor chip. The electrical contact is at least partially electrically conductively connected to the electrically conductive coating. The area of ​​the electrically conductive coating in which the electrical contact is electrically conductively connected to the electrically conductive coating preferably forms a contact point.

[0016] Furthermore, it is possible, for example in the case of a flip chip, for a first electrical contact and a second electrical contact to be arranged on the second main area of ​​the radiation-emitting semiconductor chip. In this case, the electrically conductive coating is preferably formed in two pieces and includes a first electrically conductive coating and a second electrically conductive coating.

[0017] The carrier preferably has a main extension plane. The vertical direction extends perpendicular to the main plane of extension and the lateral direction extends parallel to the main plane of extension.

[0018] The first electrically conductive coating is preferably arranged at a distance from the second electrically conductive coating in a lateral direction. The first electrically conductive coating and the second electrically conductive coating are preferably located in a common plane. The first electrical contact is preferably in electrically conductive contact, at least in regions, with the first electrically conductive coating. The second electrical contact is preferably at least partially in electrically conductive contact with the second electrically conductive coating. The area of ​​the first electrically conductive coating and the area of ​​the second electrically conductive coating in which the first electrical contact and the second electrical contact are electrically conductively connected to the electrically conductive coating preferably form a first contact point and a second contact point.

[0019] The electrically conductive coating preferably has or consists of a metal. The metal is particularly preferably silver. In addition, gold and / or copper are also suitable for the electrically conductive coating. The electrically conductive coating can be formed, for example, from copper coated with silver or gold.

[0020] In accordance with at least one embodiment, the optoelectronic component comprises a contact means which connects the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip to one another. The contact means is preferably a solder. In addition, the contact means can also be an electrically conductive adhesive. The contact means is preferably arranged between the electrical contact and the electrically conductive coating. The electrical contact and the electrically conductive coating are preferably electrically conductively connected by means of the contact means. Furthermore, the contact means secures the radiation-emitting semiconductor chip on the carrier. The contact means preferably has or consists of a metal. The metal is most preferably a solderable metal. Furthermore, the contact means preferably has a thickness of at least 500 nanometers.

[0021] In accordance with at least one embodiment, the optoelectronic component comprises a passivation layer which is arranged in places on the electrically conductive coating. The passivation layer is preferably in direct contact with the electrically conductive coating. The passivation layer preferably covers a large part of a main surface of the electrically conductive coating.

[0022] Furthermore, the passivation layer preferably covers at least one side face of the electrically conductive coating. The passivation layer particularly preferably completely covers all side surfaces of the electrically conductive coating.

[0023] The passivation layer preferably has a thickness of at most 500 nanometers. Furthermore, the passivation layer has a comparatively low permeability to moisture and corrosive gases.

[0024] According to a preferred embodiment, an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact means. The outer surface of the electrically conductive coating facing away from the carrier plate is preferably completely encapsulated by the passivation layer and the contact means. The main surface of the electrically conductive coating and at least one side surface adjoining it are preferably largely covered by the passivation layer. The area of ​​the electrically conductive coating not covered by the passivation layer is preferably completely covered by the contact means.

[0025] Furthermore, an outer surface of the electrically conductive coating that faces the carrier plate is preferably arranged on the carrier plate and is preferably in direct contact with it. The entire outer surface of the electrically conductive coating is thus three-dimensionally encapsulated by the passivation layer, the contact means and the carrier plate.

[0026] In accordance with one embodiment, the optoelectronic component comprises a radiation-emitting semiconductor chip which comprises an electrical contact, a carrier which comprises an electrically conductive coating and on which the radiation-emitting semiconductor chip with the electrical contact is arranged. In addition, the optoelectronic component in this embodiment comprises a contact means which connects the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip to one another, and a passivation layer which is arranged in places on the electrically conductive coating, an outer surface of the electrically conductive coating being completely covered by the passivation layer and the contact means is encapsulated.

[0027] One idea of ​​the optoelectronic component described here is, inter alia, to protect an electrically conductive coating of a carrier by means of a passivation layer. As a rule, the electrically conductive coating has silver. However, silver is susceptible to corrosion in humid environments. The passivation layer advantageously protects the electrically conductive coating from external influences, such as water, for example, and thus increases the operating life or service life of the optoelectronic component. Furthermore, contact points of the electrically conductive coating are generally free of the passivation layer. Advantageously, a contact means is arranged in the area of ​​the electrically conductive coating, which completely encapsulates the electrically conductive coating with the passivation layer. As a result, the service life of such an optoelectronic component is advantageously further increased.

[0028] In accordance with at least one embodiment, the passivation layer has an opening so that a contact point of the electrically conductive coating is accessible. The breakdown preferably penetrates the passivation layer completely. In the area of ​​the breakdown, the electrically conductive coating is free of the passivation layer. The area of ​​the electrically conductive coating that is free of the passivation layer can thus be electrically conductively connected to the electrical contact and forms the contact point.

[0029] It is also possible that the first electrically conductive coating and the second electrically conductive coating each have a first opening and a second opening, so that the first contact point and the second contact point of the first electrically conductive coating and the second electrically conductive coating are accessible .

[0030] According to at least one embodiment, the opening is completely filled with the contact medium. At least one side surface of the passivation layer in the area of ​​the opening and the main surface of the electrically conductive coating in the area of ​​the opening are preferably in direct contact with the contact means. Furthermore, it is possible for the contact means to protrude beyond the opening in the vertical direction.

[0031] In accordance with at least one embodiment, the electrically conductive coating is designed to be reflective, preferably specularly reflective, for a primary radiation emitted by the radiation-emitting semiconductor chip. The electrically conductive coating preferably has a reflectivity of at least 90% for the primary electromagnetic radiation generated by the radiation-emitting semiconductor chip.

[0032] The electrically conductive coating particularly preferably comprises silver or is formed from silver. Silver is advantageously designed to be comparatively highly reflective for blue light. If the radiation-emitting semiconductor chip is designed to be volume-emitting, for example, and is suitable for emitting blue light as primary electromagnetic radiation, the blue light can be emitted via the side surface of the semiconductor chip in the direction of the carrier. The highly reflective, electrically conductive coating is advantageously designed to direct the blue light emitted in the direction of the carrier to a light decoupling surface of the component. In this way, increased light decoupling and efficiency of the optoelectronic component can advantageously be achieved.

[0033] In accordance with at least one embodiment, the passivation layer comprises a layer stack. The layer stack preferably comprises at least two layers, for example a first layer and a second layer. Preferably, the first layer and the second layer are different from each other. For example, the first layer and the second layer differ in terms of their materials. For example, the following materials are suitable for the first layer and / or the second layer: SiO 2 , MgF 2 and Al 2 O 3 . Particularly preferred are the first layer and the second layer each consisting of SiO 2 , MgF 2 or Al 2 O 3may include or consist of one of these materials, arranged alternately. The first layer particularly preferably comprises SiO 2 and the second layer Al 2 O 3 . A passivation layer with a high reflectivity can preferably be achieved in this way.

[0034] In accordance with at least one embodiment, the passivation layer is arranged for the most part on the electrically conductive coating. The passivation layer particularly preferably covers at least 90% of the main area of ​​the electrically conductive coating. The passivation layer particularly preferably covers at least 95% of the main area of ​​the electrically conductive coating.

[0035] Alternatively, it is possible for the contact means to cover the electrically conductive coating for the most part. In this case only a small part is covered by the passivation layer. In this case, the passivation layer preferably covers at most 50% of the main area of ​​the electrically conductive coating.

[0036] According to at least one embodiment, the contact means protrudes beyond the opening in the lateral direction. A main surface of the passivation layer that faces away from the electrically conductive coating is preferably covered with the contact means in the area that runs around the opening. The contact means is in direct contact with the passivation layer in this area which protrudes in the lateral direction. The contact means thus forms over the passivation layer in the area of ​​the breakthrough, preferably continuously. The overmolding advantageously protects the electrically conductive coating particularly well against external chemical influences.

[0037] According to at least one embodiment, a metal layer is arranged in the opening between the contact means and the electrically conductive coating. The metal layer preferably completely covers the contact point or the freely accessible electrically conductive coating and is in direct contact with it. The metal layer can be flush with the main surface of the passivation layer. Alternatively, it is possible for the metal layer to be arranged in the opening up to a specific height in the vertical direction, so that the at least one side face of the opening is only partially covered by the metal layer. Furthermore, it is possible for the metal layer to protrude beyond the opening in the vertical direction.

[0038] An additional barrier effect against external chemical influences can be achieved by the metal layer. Advantageously, the protection provided by the electrically conductive coating can be increased in this way.

[0039] In accordance with at least one embodiment, a side face of the electrically conductive coating is free of the passivation layer. The side face of the electrically conductive coating, which is free of the passivation layer, preferably overlaps with the radiation-emitting semiconductor chip in a plan view. The side face is therefore preferably located between the radiation-emitting semiconductor chip and the carrier plate. In this case, the passivation layer preferably covers the main surface of the electrically conductive coating only up to an edge at which the main surface and the side surface of the electrically conductive coating are in contact.

[0040] In accordance with at least one embodiment, the side face of the electrically conductive coating that is free of the passivation layer is completely covered by a potting body. The potting body can be, for example, a resin, such as an epoxy or a silicone, or a mixture of these materials. Reflecting particles are preferably introduced into the potting body. The reflective particles preferably comprise TiO 2 -particles. Furthermore, the potting body preferably has a reflectivity of at least 90% for the primary electromagnetic radiation generated by the radiation-emitting semiconductor chip.

[0041] The potting body is preferably in direct contact with the side face of the electrically conductive coating. The outer surface of the electrically conductive coating facing away from the carrier plate is thus preferably completely encapsulated by the passivation layer, the contact means and the potting body.

[0042] In accordance with at least one embodiment, the radiation-emitting semiconductor chip is surrounded by a conversion element, which converts electromagnetic primary radiation from the semiconductor chip into electromagnetic secondary radiation of a different wavelength range. The conversion element comprises, for example, a matrix material into which phosphor particles are introduced. The matrix material can be, for example, a resin such as an epoxy or a silicone or a polysiloxane or a mixture of these materials. The phosphor particles preferably impart the wavelength-converting properties to the conversion element.

[0043] For example, one of the following materials is suitable for the phosphor particles: rare earth-doped garnets, rare earth-doped alkaline earth sulfides, rare earth-doped thiogallates, rare earth-doped aluminates, rare earth-doped silicates, rare earth-doped orthosilicates, rare earth-doped doped chlorosilicates, rare earth-doped alkaline earth silicon nitrides, rare earth-doped oxynitrides, rare earth-doped aluminum oxynitrides, rare earth-doped silicon nitrides, rare earth-doped sialons, quantum dots. These materials can also be used without matrix material and applied directly. In this case, the matrix material can be applied subsequently.

[0044] The conversion element preferably covers the radiation-emitting semiconductor chip and the main area of ​​the passivation layer. Furthermore, the conversion element is preferably applied by means of a spraying process.

[0045] In accordance with at least one embodiment, an optical element is arranged downstream of the radiation-emitting semiconductor chip. Subordinate means that the optical element is arranged relative to the radiation-emitting semiconductor chip in such a way that the primary electromagnetic radiation of the semiconductor chip can pass through the optical element. The optical element preferably completely covers the conversion element and is in direct contact with it.

[0046] The optical element can be a lens. For example, the optical element has a resin, such as an epoxy or a silicone, or a mixture of these materials. An outer surface of the optical element facing away from the semiconductor chip preferably has a convex or concave shape. The primary and secondary radiation to be coupled out of the optoelectronic component can advantageously be shaped in the desired manner by means of the shape of the optical element.

[0047] According to at least one embodiment, the passivation layer has a lower refractive index than the optical element and / or the conversion element. Due to the difference in refractive index between the passivation layer and the optical element and / or the conversion element, electromagnetic radiation striking the passivation layer can be reflected particularly well.

[0048] According to at least one embodiment, the electrically conductive coating comprises a first electrically conductive coating and a second electrically conductive coating. In this case, the first electrically conductive coating is preferably at most 100 micrometers apart in the lateral direction from the second electrically conductive coating. Preferably, the first electrically conductive coating and the second electrically conductive coating each have opposing side surfaces spaced at most 100 micrometers apart. Due to the comparatively small distance between the first electrically conductive coating and the second electrically conductive coating, the interface to the carrier plate is advantageously increased and heat generated during operation can be dissipated better from the semiconductor chip and the conversion element.

[0049] A method for producing an optoelectronic component is also specified, with which an optoelectronic component described here can be produced. All of the features and embodiments disclosed in connection with the optoelectronic component can therefore also be used in connection with the method and vice versa.

[0050] According to at least one embodiment of the method, a carrier is provided which comprises an electrically conductive coating. The carrier further includes a carrier plate. The carrier plate can be produced, for example, by means of an injection molding or casting process. The electrically conductive coating can be applied to the carrier plate, for example, by means of electroplating, vaporization, spraying, screen printing or knife coating.

[0051] According to at least one embodiment of the method, a passivation layer is applied to the carrier. The material of the passivation layer can be applied, for example, by means of chemical or physical vapor deposition, vaporization, spraying, screen printing or knife coating. For example, the passivation layer is structured during or after application.

[0052] According to at least one embodiment of the method, a radiation-emitting semiconductor chip is provided, which includes an electrical contact.

[0053] In accordance with at least one embodiment of the method, the semiconductor chip is connected to the carrier by means of a contact means. For this purpose, for example, the electrical contact of the semiconductor chip is applied in regions by gluing or soldering using the contact means on the electrically conductive coating. This connection fastens the radiation-emitting semiconductor chip to the carrier, preferably in an electrically conductive and / or thermally conductive manner. In addition, this connection preferably fixes the radiation-emitting semiconductor chip on the carrier in a mechanically stable manner.

[0054] According to at least one embodiment of the method, an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact means.

[0055] According to at least one embodiment of the method, a breakthrough is produced in the passivation layer and a contact point of the electrically conductive coating is accessible in the region of the breakthrough. The breakthrough can be produced using a mask and an etching process.

[0056] According to at least one embodiment of the method, the contact means is applied to the electrical contact. The contact means can be applied to the electrical contact by gluing or soldering, for example. When the contact means is applied to the electrical contact, the contact means preferably covers at least 50%, particularly preferably at least 80%, of a main surface of the electrical contact. Furthermore, the contact agent is preferably present in a viscous form when it is applied.

[0057] According to at least one embodiment of the method, the contact means is pressed onto the contact point of the electrically conductive coating during the connection, so that the contact means protrudes beyond regions of the passivation layer that surround the opening. The contact means protrudes beyond the opening, preferably in the lateral direction and particularly preferably in the vertical direction.

[0058] During connection, the contact means is preferably pressed centrally into the opening on the electrically conductive coating. The contact means is preferably pressed against the electrically conductive coating with a constant pressure. By pressing the contact means is partially displaced from the opening. The contact means is thus pushed into the areas of the passivation layer that run around the opening, so that the contact means forms over the passivation layer in the area of ​​the opening.

[0059] In accordance with at least one embodiment of the method, the semiconductor chip is heated when it is connected to the carrier. The contact means is preferably also heated by heating the semiconductor chip, so that the contact means can be shaped and is present in the viscous form.

[0060] According to at least one embodiment of the method, before the connection is made, a metal layer is deposited on the contact point of the electrically conductive coating by means of a galvanic process. For example, the metal layer comprises or consists of a metal, the metal having particularly good soldering properties. For example, the metallic layer is applied in the opening. In this case, the galvanic layer preferably completely fills the opening in the lateral direction.

[0061] According to at least one embodiment of the method, the passivation layer is structured using a shadow mask and a physical etching process. The passivation layer is preferably deposited completely over or on the carrier. In this case, the passivation layer preferably completely covers the carrier plate and the electrically conductive coating. The breakthrough in the passivation layer is produced by means of the shadow mask and the physical etching process, and the passivation layer is thus structured.

[0062] According to at least one embodiment of the method, the passivation layer is structured using a photoresist mask and a chemical etching process. For example, the passivation layer is deposited completely over the carrier. The photoresist mask can be a positive photoresist, for example, which is applied in a structured manner over the passivation layer. The areas of the passivation layer that are not covered by the positive photoresist can be removed by means of the chemical etching process. In a subsequent step, the positive photoresist is removed.

[0063] Alternatively, it is possible to apply a negative photoresist completely over or on the carrier plate and the electrically conductive coating. Using ultraviolet exposure and another shadow mask, the negative photoresist can be structured in such a way that it is only arranged over the areas where the breakthrough is to be generated. The passivation layer can then be completely arranged over the carrier plate, the electrically conductive coating and the negative photoresist. In this case, the passivation layer is preferably applied to the negative photoresist by means of a directional deposition method. Subsequent removal of the negative photoresist using the chemical etching process also results in removal of the passivation layer disposed over the negative photoresist.

[0064] The optoelectronic component and the method for producing the optoelectronic component are explained in more detail below with reference to the figures using exemplary embodiments.

[0065] Show it: figure 1 and figure 2 schematic sectional views of an optoelectronic component according to an embodiment, figure 3, figure 4, figure 5, figure 6, figure 7 and figure 8 schematic sectional representations of method stages of the method for producing an optoelectronic component according to an exemplary embodiment, figure 9 and figure 10 schematic sectional representations of method stages of the method for producing an optoelectronic component according to an exemplary embodiment, figure 11, figure 12 and figure 13 schematic sectional representations of method stages in the production of a structured passivation layer for an optoelectronic component according to an embodiment, figure 14, figure 15, figure 16, figure 17 and figure 18 schematic sectional representations of method stages in the production of a structured passivation layer for an optoelectronic component according to an embodiment, figure 19 and figure 20 schematic sectional representations of method stages in the production of an optoelectronic component according to an exemplary embodiment, figure 21, figure 22 and figure 23 schematic sectional illustrations of an optoelectronic component according to one exemplary embodiment in each case.

[0066] Elements that are the same, of the same type or have the same effect are provided with the same reference symbols in the figures. The figures and the relative sizes of the elements shown in the figures are not to be regarded as being to scale. Rather, individual elements can be shown in an exaggerated size for better representation and / or for better comprehensibility.

[0067] The optoelectronic component 1 according to the embodiment of figure 1 and figure 2 comprises a radiation-emitting semiconductor chip 2 , which makes a first electrical contact 3a and a second electrical contact 3b includes, each by means of a contact means 6 electrically conductive with a first electrically conductive coating 5a and a second electrically conductive coating 5b a carrier 4 are connected. The first electrically conductive coating 5a and the second electrically conductive coating form an electrically conductive coating 5 the end. The electrically conductive coating 5 is on a backing board 4a arranged.

[0068] Above the radiation-emitting semiconductor chip 2 and the first electrically conductive coating 5a and the second electrically conductive coating 5b are a conversion element 14 and an optical element 15 arranged.

[0069] Furthermore, the first electrically conductive coating 5a and the second electrically conductive coating 5b opposite side surfaces 8a on that between the radiation-emitting semiconductor chip 2 and the carrier plate 4a are arranged. On a second main area of ​​the radiation-emitting semiconductor chip 2 , which is located in the gap, is also a conversion element 14 arranged. Furthermore, the space between the two opposing side surfaces 8a with a reflective potting body 13 completely filled.

[0070] Between the conversion element 14 and the first electrically conductive coating 5a and the second electrically conductive coating 5b is a passivation layer in places 7 arranged.

[0071] An outer surface of the electrically conductive coating 8 is completely covered by the passivation layer 7 and the means of contact 6 encapsulated.

[0072] The optical element is made, for example, from a silicone with a refractive index of n=1.54 and the passivation layer is made from SiO 2 with a refractive index of n=1.46 or made of MgF 2 with a refractive index of n=1.38.

[0073] figure 2 shows an enlarged section of the optoelectronic component 1 according to figure 1 and is in figure 1 marked as a square. The passivation layer 7 indicates a breakthrough 9 on so that the contact point 10 the electrically conductive coating 5 is accessible. Furthermore, the breakthrough with the contact means 6 completely filled. The means of contact 6 forms the passivation layer 7 and towers over them in the lateral and vertical directions.

[0074] In the method according to the embodiment of figure 3, figure 4, figure 5, figure 6, figure 7 and figure 8 is in a first step according to the figure 3 the carrier 4 provided of the electrically conductive coating 5 includes.

[0075] In a further step, the passivation layer 7 structured applied to the carrier, as in figure 4 shown. The passivation layer 7 stands with the electrically conductive coating 5 and the carrier plate 4a in direct contact.

[0076] After applying the passivation layer 7 is in a further step according to figure 5 the radiation-emitting semiconductor chip 2, making the electrical contact 3 includes, provided and by means of the contact means 6 electrically conductive with the electrically conductive coating 5 connected, preferably by soldering. The means of contact 6 is preferred here before connecting the electrical contact 3 with the electrically conductive coating 5 on the electrical contact 3 upset. The means of contact 6 is preferably applied as a comparatively thin layer. Advantageously, comparatively small and easily reproducible amounts of the contact agent can be used in this way 6 on the electrical contact 3 be brought up.

[0077] A space between opposing faces 8a the electrically conductive coating 5 , the radiation-emitting semiconductor chip 2 and the carrier 4 is in a further step according to figure 6 with the potting body 13 completely filled.

[0078] In a further step, according to the figure 7 and figure 8, is above the radiation-emitting semiconductor chip 2 and the passivation layer 7 a conversion element 14 and an optical element 15 upset.

[0079] In the method according to the embodiment of figure 9 and figure 10 becomes after deploying the carrier 4 , as in figure 3 shows the passivation layer 7 completely over the carrier 4 secluded ( figure 9).

[0080] In a further step, the passivation layer 7 using a shadow mask 16 and structured by a physical etching process ( figure 10). The passivation layer 7 is analogous to the embodiment of figure 13 structured.

[0081] In the method according to the embodiment of figure 11, figure 12 and figure 13, after the passivation layer has been completely applied, as in figure 9, a photoresist mask 17 , which is for example a positive photoresist, over the passivation layer 7 upset ( figure 11).

[0082] According to figure 12 become the areas of the passivation layer not covered by the positive photoresist 7 removed by a chemical etching process, causing the breakthrough 9 in the passivation layer 7 is produced.

[0083] In a further step, the positive photoresist is removed, as in figure 13 shown.

[0084] In the method according to the embodiment of figure 14, figure 15, figure 16, figure 17 and figure 18 becomes after providing the carrier 4 , as in figure 3 shown according to FIG figure 14 the photoresist mask 17 , which is for example a negative photoresist, over the support 4 fully applied.

[0085] In a further step, according to figure 15, becomes another shadow mask over the negative photoresist 18 arranged. Furthermore, the negative photoresist is exposed by means of ultraviolet exposure, which is described in figure 15 is marked with a plurality of arrows, exposed.

[0086] As in figure 16, the negative photoresist is structured after exposure so that it only covers the areas where the breakthrough 9 is to be generated, is arranged.

[0087] Below is about the carrier 4 with the electrically conductive coating 5 and the negative photoresist the passivation layer 7 fully applied as in figure 17 shown. Advantageously, the passivation layer 7 preferably applied to the negative photoresist by means of vapor deposition or evaporation, so that a side surface of the negative photoresist is not completely covered. Advantageously, the negative photoresist can be removed better ( figure 18).

[0088] According to figure18, the negative photoresist is removed in a further step. The passivation layer is also removed by means of a chemical etching process 7 removed, which is placed over the negative photoresist.

[0089] In the method according to the embodiment of figure 19 and figure 20 is the connection of the radiation-emitting semiconductor chip 2 with the carrier 4 shown.

[0090] The means of contact 6 is on the electrical contact 3 upset, as in figure 19 shown. The means of contact 6 covers the electrical contact 3 Completely. The radiation-emitting semiconductor chip 2 is heated so that the contact means 6 is in a viscous form.

[0091] In a further step according to figure 20, the contact means 6 when connecting centrally in the opening 10 on the electrically conductive coating 5 pressed. The means of contact 6 is pressed against the electrically conductive coating with constant pressure 5 pressed. By pressing the contact means 6 partially pushed out of the breakthrough. The means of contact 6 gets into the areas of the passivation layer 7 who made the breakthrough 10 circulate displaced, so that the contact means 6 the passivation layer 7 in the breakthrough area 10 overmolded.

[0092] With the optoelectronic component 1 according to the embodiment of figure 21 is the passivation layer 7 in contrast to the optoelectronic component 1 according to the embodiment of figure 2 formed as a stack of layers, a first layer 11a and a second layer 11b includes. For example, the first layer includes SiO 2 and the second layer Al 2 O 3 .

[0093] The embodiment of the optoelectronic component 1 according to figure 22 has in contrast to the optoelectronic component 1 according to the embodiment of figure 2 a side surface of the electrically conductive coating 8a on that are free of the passivation layer 7 is. Furthermore, the side surface of the electrically conductive coating 8a that are free of the passivation layer 7 is, completely of a potting body 13 covered. The potting body 13 includes, for example, a silicone in the TiO 2 -particles are introduced. Those of the carrier plate 4a remote outer surface of the electrically conductive coating 8 is thus completely covered by the passivation layer 7 , the means of contact 6 and the potting body 13 encapsulated.

[0094] With the optoelectronic component 1 according to the embodiment of figure 23 is between the contact means 6 and the electrically conductive coating 5 in contrast to the optoelectronic component 1 according to the embodiment of figure 2 a metal layer 12 arranged. The metal layer 12 is fully in the breakthrough 9 arranged and fills it out completely. The metal layer 12 remains flush with the major surface of the passivation layer 7 away.

[0095] The invention is not limited to these by the description based on the exemplary embodiments. Rather, the invention encompasses every new feature and every combination of features, which in particular includes every combination of features in the patent claims, even if this feature or this combination itself is not explicitly specified in the patent claims or exemplary embodiments. Reference List 1 optoelectronic component 2 radiation-emitting semiconductor chip 3 electrical contact 3a first electrical contact 3b second electrical contact 4 carriers 4a carrier plate 5 electrically conductive coating 5a first electrically conductive coating 5b second electrically conductive coating 6 means of contact 7 passivation layer 8 Outer surface electrically conductive coating 8a side surface electrically conductive coating 9 breakthrough 10 point of contact 10a first point of contact 10b second contact point 11a first layer 11b second layer 12 metal layer 13 potting body 14 conversion element 15 optical element 16 shadow mask 17 photoresist mask 18 more shadow mask

Claims

[1] Optoelectronic component (1) with: - a radiation-emitting semiconductor chip (2) comprising an electrical contact (3), - a carrier (4) comprising an electrically conductive coating (5) on which the radiation-emitting semiconductor chip (2) with the electrical contact (3) is arranged, - a contact medium (6) that connects the electrically conductive coating (5) of the substrate (4) and the electrical contact (3) of the semiconductor chip (2), and - a passivation layer (7) which is arranged locally on the electrically conductive coating (5), wherein - an outer surface of the electrically conductive coating (8) is completely encapsulated by the passivation layer (7) and the contact medium (6). [2] Optoelectronic component (1) according to the preceding claim, wherein - the passivation layer (7) has a breakthrough (9) so that a contact point (10) of the electrically conductive coating (5) is accessible, and - the breakthrough (9) is completely filled with the contact medium (6). [3] Optoelectronic component (1) according to one of the preceding claims, wherein the electrically conductive coating (5) is designed to reflect primary radiation emitted by the radiation-emitting semiconductor chip (2). [4] Optoelectronic component (1) according to one of the preceding claims, wherein the passivation layer (7) comprises a stack of layers. [5] Optoelectronic component (1) according to one of the preceding claims, wherein the passivation layer (7) is arranged for the most part on the electrically conductive coating (5). [6] Optoelectronic component (1) according to any one of the preceding claims 2 to 5, wherein the contact means (6) extends beyond the opening (9) in a lateral direction. [7] Optoelectronic component (1) according to one of claims 2 to 6, in which a metal layer (12) is arranged in the opening (9) between the contact means (6) and the electrically conductive coating (5). [8] Optoelectronic component (1) according to any one of the preceding claims, wherein - one side surface of the electrically conductive coating (8a) is free from the passivation layer (7), and - the side surface of the electrically conductive coating (8a), which is free from the passivation layer (7), is completely covered by a potting compound (13). [9] Optoelectronic component (1) according to one of the preceding claims, wherein the radiation-emitting semiconductor chip (2) is surrounded by a conversion element (14) which converts electromagnetic primary radiation from the semiconductor chip (2) into electromagnetic secondary radiation of a different wavelength range. [10] Optoelectronic component (1) according to one of the preceding claims, in which an optical element (15) is arranged downstream of the radiation-emitting semiconductor chip (2). [11] Optoelectronic component (1) according to one of the preceding claims 9 and 10, wherein the passivation layer (7) has a smaller refractive index than the optical element (15) and / or the conversion element (14). [12] Optoelectronic component (1) according to any of the above claims, wherein the radiation-emitting semiconductor chip (2) is a flip chip. [13] Optoelectronic component (1) according to any one of the above claims, wherein - the electrically conductive coating (5) comprises a first electrically conductive coating (5a) and a second electrically conductive coating (5b), and - the first electrically conductive coating (5a) is spaced at most 100 micrometers apart in lateral directions from the second electrically conductive coating (5b). [14] Method for manufacturing an optoelectronic component (1) comprising the steps: - Providing a carrier (4) comprising an electrically conductive coating (5), - Applying a passivation layer (7) to the substrate, - Providing a radiation-emitting semiconductor chip (2) comprising an electrical contact (3), - Connecting the semiconductor chip (2) to the substrate (4) by means of a contact means (6), wherein - an outer surface of the electrically conductive coating (8) is completely encapsulated by the passivation layer (7) and the contact medium (6). [15] Method according to the preceding claim, wherein a breakthrough (9) is created in the structured passivation layer (7) and a contact point (10) of the electrically conductive coating (5) is accessible in the area of ​​the breakthrough (9). [16] Method according to the preceding claim, wherein - the contact medium (6) is applied to the electrical contact (3), and - the contact medium (6) is pressed onto the contact point (10) of the electrically conductive coating (5) during connection, so that contact medium (6) extends beyond areas of the passivation layer (7) that surround the breakthrough (9). [17] Method according to the preceding claim, wherein the semiconductor chip (2) is heated during connection. [18] Method according to one of claims 15 to 17, wherein a metal layer (12) is deposited on the contact point (10) of the electrically conductive coating (5) by means of an electroplating process prior to joining. [19] Method according to any one of the preceding claims 15 to 18, wherein the passivation layer (7) is structured by means of a shadow mask (16) and a physical etching process. [20] Method according to any one of the preceding claims 15 to 18, wherein the passivation layer (7) is structured by means of a photoresist mask (17) and a chemical etching process.

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