Power semiconductor device and method for manufacturing the same, and power conversion device

Abstract

Power semiconductor device (101, 201, 301, 302, 401, 402, 403, 601), comprising: a housing (1); a first insulating circuit board (2) arranged to be surrounded by the housing (1); a second insulating circuit board (3) surrounded by the housing (1) and arranged at a distance from the first insulating circuit board (2) such that a semiconductor element (4) is embedded between the first insulating circuit board (2) and the second insulating circuit board (3);and a sealing material (5) which fills an area surrounded by the housing (1), wherein the first or second insulating circuit board (2 or 3) has a hole (7) extending from one main surface to reach the other main surface opposite the one main surface, wherein a projection (1E, 10) extends from at least one area of ​​an inner wall surface (1C) of the housing (1) above the first insulating circuit board (2) and above the second insulating circuit board (3) towards an area overlapping with the first or second insulating circuit board (2 or 3) in a top view, and wherein a gap is arranged between the projection (1E, 10) and the first insulating circuit board (2) and the second insulating circuit board (3).

Description

Background of the invention; Field of the invention

[0001] The present invention relates to a power semiconductor device and a method for manufacturing the same, and more precisely to a power semiconductor device comprising two types of insulating circuit boards with a semiconductor element embedded between them, and a method for manufacturing the same. The present invention also relates to a power conversion device in which the power semiconductor device is used. Description of the state of the art

[0002] The disclosed Japanese patents Nos. 2016-25154, 2013-74035 and 2015-159258 disclose a semiconductor device having a projection or similar structure arranged therein to control how a sealing material flows when it is supplied and thus introduced into a die with a semiconductor element placed in the die or the like. Summary of the invention

[0003] A general power semiconductor device comprises an arrangement in which a semiconductor element and circuit pattern are electrically connected via a metal conductor, a metal component, or the like, as described in the preceding patent documents. However, for even higher density and reliability, a power semiconductor device is increasingly being developed that comprises an arrangement in which an insulating circuit board, capable of conducting a high current, is mounted on a semiconductor element.

[0004] This means that such a power semiconductor device has an arrangement in which a semiconductor element is mounted on a first insulating circuit board, and a second insulating circuit board is mounted on top of it and connected. However, the power semiconductor device with the above structure has an area where the first insulating circuit board and the second insulating circuit board have a narrow gap between them. It is difficult to introduce a sealing material into such a narrow area, and the power semiconductor device has the problem that it is difficult to fill such an area with an insulating sealing material without a gap.However, the foregoing patent documents do not provide such a structure in which an insulating circuit board is mounted on a semiconductor element and thus overlaps with it, and the patent documents do not disclose a technique for better introducing a sealing material into a narrow area between two insulating circuit boards.

[0005] The present invention was made in view of the above problem, and it is an object of the present invention to provide a power semiconductor device in which an insulating sealing material is introduced into a narrow area between two insulating circuit boards without a gap, and a method for manufacturing the same, as well as a power conversion device comprising such a power semiconductor device.

[0006] According to the present invention, a power semiconductor device comprises a housing, a first insulating circuit board, a second insulating circuit board, and a sealing material. The first insulating circuit board is arranged to be surrounded by the housing. The second insulating circuit board is surrounded by the housing and arranged at a distance from the first insulating circuit board such that a semiconductor element is embedded between the first and second insulating circuit boards. The sealing material fills an area surrounded by the housing. The first or second insulating circuit board is provided with a hole extending from one main surface to the other main surface opposite the first main surface.From at least one area of ​​an inner wall surface of the enclosure, a projection extends towards an area which, in a top view, overlaps with the first or second insulating circuit board, in the direction of the area surrounded by the enclosure.

[0007] According to the present invention, a power semiconductor device comprises a housing, a first insulating circuit board, a second insulating circuit board, and a sealing material. The first insulating circuit board is arranged to be surrounded by the housing. The second insulating circuit board is surrounded by the housing and arranged at a distance from the first insulating circuit board such that a semiconductor element is embedded between the first and second insulating circuit boards. The sealing material fills an area surrounded by the housing. The housing has at least one area with a hole extending from an outermost surface of the housing to an inner wall surface opposite the outermost surface.From at least one area of ​​the inner wall surface of the enclosure, a projection extends towards an area which, in a top view, overlaps with the first or second insulating circuit board, in the direction of the area surrounded by the enclosure.

[0008] According to the present invention, in a method for manufacturing a power semiconductor device, a second insulating circuit board is first connected via a major surface of a first insulating circuit board, such that a semiconductor element is embedded between the first insulating circuit board and the second insulating circuit board. The first insulating circuit board, the semiconductor element, and the second insulating circuit board are arranged to be enclosed in a housing. The semiconductor element is sealed by providing a sealing material in an area enclosed by the housing. The first or second insulating circuit board is provided with a hole extending from one major surface to the other major surface.From at least one area of ​​an inner wall surface of the enclosure, a projection extends towards an area which, in a top view, overlaps with the first or second insulating circuit board, in the direction of the area surrounded by the enclosure.

[0009] The foregoing and other tasks, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when viewed in conjunction with the accompanying drawings. List of characters Fig. Figure 1 is a schematic top view showing an arrangement of a power module according to a first embodiment. Fig. 2A is a schematic cross-section of an arrangement that defines an area along a line AA in Fig. 1 comprises, that is, an area on a longer side of a housing of the power module of the first embodiment, and Fig. 2B is a schematic cross-section of an arrangement that defines an area along a line BB in Fig. 1 comprises, that is, an area which is a longer side of the housing of the power module of the first embodiment and has an external output connector. Fig. 3 is a schematic cross-section of an arrangement that defines an area along a line CC in Fig. 1 comprises, that is, an area on a shorter side of the housing of the power module of the first embodiment. Fig. Figure 4 is a schematic cross-section that defines a dimension of a gap in each area of ​​the power module of the first embodiment. Fig. Figure 5 is a schematic cross-section to illustrate a first step of a method for manufacturing the power module according to the first embodiment. Fig. Figure 6 is a schematic cross-section to illustrate a second step of the method for manufacturing the power module according to the first embodiment. Fig. 7A and Fig. Figures 7B each show a third step of the process for manufacturing the power module according to the first embodiment in a schematic cross-section, taken along line CC in Fig. 1, and a schematic cross-section, recorded along line AA in Fig. 1. Fig. Figure 8 is a schematic top view of an arrangement of a power module according to a comparative example. Fig. 9A and Fig. Figure 9B each shows a flow of a sealing material in a process for manufacturing the power module according to the comparative example in a sealing step similar to that of Fig. 7A and Fig. 7B in a schematic cross-section, which is seen in a cross-section that runs along line AA in Fig. 1 is included, which covers an area on a longer side of the housing, and a schematic cross-section seen in a cross-section that extends along line BB in Fig. 1 is included, which covers an area on the longer side of the housing. Fig. 10A and Fig. Figures 10B each show a flow of a sealing material in the process for manufacturing the power module according to the first embodiment during a sealing step similar to that of Fig. 7A and Fig. 7B in a schematic cross-section, which is seen in a cross-section that runs along line AA in Fig. 1 is included, which covers an area on the longer side of the housing, and a schematic cross-section seen in a cross-section that runs along line CC in Fig. 1 is included, which covers an area on the longer side of the housing. Fig. Figure 11 is a schematic cross-section of an arrangement comprising an area corresponding to an area on a longer side of a housing of a power module of a second embodiment, shown along line AA in Fig. 1. Fig. Figure 12 is a schematic top view of an arrangement of a power module according to a third embodiment. Fig. Figure 13 is a schematic cross-section of an arrangement comprising an area corresponding to an area on a longer side of a housing of a power module of the third embodiment in a first example, taken along line AA in Fig. 1. Fig. Figure 14 is a schematic cross-section of an arrangement comprising an area corresponding to an area on a longer side of a housing of a power module of the third embodiment in a second example, taken along line AA in Fig. 1. Fig. Figure 15 is a schematic top view of an arrangement of a power module according to a fourth embodiment. Fig. Figure 16 is a schematic cross-section of an arrangement comprising an area corresponding to an area on a longer side of a housing of a power module of the fourth embodiment in a first example, recorded along line AA in Fig. 1. Fig. Figure 17 is a schematic cross-section of an arrangement comprising an area corresponding to an area on a longer side of a housing of a power module of the fourth embodiment in a second example, shown along line AA in Fig. 1. Fig. Figure 18 is a schematic cross-section of an arrangement comprising an area corresponding to an area on a longer side of a housing of a power module of the fourth embodiment in a third example, taken along line AA in Fig. 1. Fig. Figure 19 is a schematic cross-section of an arrangement comprising an area corresponding to an area on a longer side of a housing of a power module of a fifth embodiment, shown along line AA in Fig. 1. Fig. Figure 20 is a schematic cross-section of an arrangement comprising an area corresponding to an area on a longer side of a housing of a power module of a sixth embodiment, shown along line AA in Fig. 1. Fig. Figure 21 is a block diagram showing an arrangement of a power conversion system in which a power conversion device according to a seventh embodiment is used. Description of preferred embodiments

[0010] The following section refers to the drawings in order to describe the present invention in its various embodiments. First embodiment

[0011] First, an arrangement of a power module as a line semiconductor device according to the present embodiment is described with reference to Fig. 1 to Fig. 4 described. With reference to Fig. 1 to Fig. 4 has a power module 101 in the present embodiment a housing 1 as a casing, a lower insulating circuit board 2 as a first insulating circuit board, an upper insulating circuit board 3 as a second insulating circuit board, a semiconductor element 4 and a sealing material 5 , which goes into the case 1 has been introduced. Fig. 2A and Fig. 2B shows areas that run along in Fig. Lines AA and BB shown in 1 are included, and Fig. Figure 3 shows an area that runs along a Fig. Line CC shown in 1 is recorded. This corresponds accordingly in Fig. 2A and Fig. 2B a direction to the right / left relative to the direction of a shorter side of a rectangle in Fig. 1 (a vertical direction), and in Fig. 3 corresponds to a right / left direction to the direction of a longer side of the rectangle in Fig. 1 (one direction to the right / left).

[0012] The case 1 is a component that is arranged to protect the lower insulating circuit board. 2 , the upper insulating circuit board 3 , the semiconductor element 4 and the sealing material 5 in a top view. In other words, the lower insulating circuit board. 2 , the upper insulating circuit board 3 and the like arranged so that they are separated from the casing 1 are surrounded.

[0013] As in Fig. As shown in 1, the housing 1 For example, the shape of a rectangular frame. The casing 1 is located in an outermost area of ​​the power module 101 and thus in the form of a box containing the power module 101 completely surrounds, arranged. The housing 1 It consists of a mechanically very strong and highly insulating material such as a commonly known PPS (polyphenylene sulfide resin), liquid crystal polymer, or the like. The PPS has a thermal conductivity of approximately 0.5 W / (m • K).

[0014] The case 1 has a main surface 1A , which form a lowest area in Fig. 2A and Fig. 2B forms, and the other main surface 1B , which have a top area in Fig. 2A and Fig. 2B forms, on, between which the component of the preceding material extends in a vertical direction in Fig. 2A and Fig. 2B extends so that it forms a hull of the housing 1 forms. Furthermore, the housing shows 1 , which has the form of a frame, an inner wall surface 1C facing an area enclosed by the housing 1 is surrounded. Furthermore, the casing 1 in particular an inner lower surface 1D in a relatively lower area closer to a main surface 1A on. The inner lower surface 1D is a top area of ​​this area of ​​a lower area of ​​the housing 1 , in which the hull turns in the direction to the right / left in Fig. 2A and Fig. 2B extends, i.e., along one main surface 1A , and it is formed as another main surface that creates a lower surface in the surrounding area. The one main surface 1A of the case 1At one of its outermost areas, in a top view opposite the other main surface, lies a 1B and in a position further inwards than the outermost area opposite the inner lower surface 1D lies.

[0015] Furthermore, as described below, the housing 1 in the present embodiment designed such that a projection 1E from at least one area of ​​an inner wall surface of the housing 1 extends.

[0016] The lower insulating circuit board 2 is a component in the form of a flat plate, which forms a base for the entire power module. 101 forms. The lower insulating circuit board 2 has a main surface 2A as a main surface on a lower side in Fig. 2A and Fig. 2B to Fig. 4 and the other main surface 2Bopposite one main surface 2A , i.e., as a main surface on an upper side in Fig. 2A and Fig. 2B to Fig. 4, on, and, as in Fig. As shown in Figure 1, it is a component in the form of a rectangular plane. In other words, it has one main surface. 2A and the other main surface 2B the lower insulating circuit board 2 a rectangular shape, as in Fig. 1 shown.

[0017] The lower insulating circuit board 2 is also a component to enable a through the semiconductor element 4 generated heat is directed under the lower insulating circuit board. 2 in Fig. 2 to Fig. 4 can be derived. The lower insulating circuit board 2 features an arrangement in which an insulating layer 2D on a metal base plate 2Cis layered, and has an upper surface pattern 2P is on an area of ​​the insulating layer 2D This involves, for example, creating a surface that is formed by connecting a lower section of the lower insulating circuit board. 2 in Fig. 2A and Fig. 2B is formed as one main surface 2A defined, and a surface created by connecting a top area of ​​the lower insulating circuit board 2 in Fig. 2A and Fig. 2B is formed, is considered the other main surface 2B defined. Therefore, the other main surface serves 2B as one of the top surfaces of the upper surface pattern 2P in an area where the upper surface pattern 2P is formed, and the other main surface 2B serves as the uppermost surface of the insulating layer 2Din an area where the upper surface pattern 2P is not trained.

[0018] The metal base plate 2C is a component to enable the heat generated when the semiconductor element 4 is controlled outside the line module 101 to be released, i.e. from one main surface 2A downwards. The metal base plate 2C It preferably consists of, for example, copper, aluminum, or similar materials, but is not limited to these, as long as it is a metal material with good heat dissipation properties. However, from the standpoint of weight reduction and machinability, it is desirable that the metal base plate be made of a metal material. 2C It is made of aluminum.

[0019] The insulating layer 2D is a component in the form of a flat plate, designed to hold the semiconductor element 4and / or the like, which is arranged on it, and the lower insulating circuit board 2 to electrically isolate them from each other, i.e., to allow the insulating circuit board to 2 overall, it acts as an insulating material. The insulating layer 2D It is preferably made of a thermosetting resin such as epoxy resin. The insulating layer 2D is on an entire surface of the metal base plate 2C formed, thereby creating the upper surface pattern 2P and the metal base plate 2C electrically isolated from each other.

[0020] The upper surface pattern 2P is a thin layer of a metal such as copper, which is applied to the insulating layer consisting of resin. 2D is formed as shown. The upper surface pattern 2Pis electrically connected to an external connection terminal or the like (not shown) arranged above it, and is also electrically connected to the semiconductor element 4 tied together.

[0021] In the preceding description, the lower insulating circuit board is 2 so that the upper surface pattern 2P through the insulating layer 2D It can be electrically isolated from a lower area. The lower insulating circuit board 2 However, it is not limited to this and can, for example, be a ceramic substrate. Alternatively, the lower insulating circuit board can be... 2 be arranged such that, for example, a top surface pattern made of metal or a designed conductor frame is formed on a main surface of an insulating substrate made of ceramic.

[0022] The upper insulating circuit board3 is positioned with a gap between them directly above the lower insulating circuit board. 2 arranged so that the upper insulating circuit board 3 in a top view showing the lower insulating circuit board 2 overlapping. The upper insulating circuit board 3 has a main surface 3A as a main surface on a lower side in Fig. 2A and Fig. 2B to Fig. 4, and the other main surface 3B opposite one main surface 3A , i.e., as a main surface on an upper side in Fig. 2A and Fig. 2B to Fig. 4, up, and she is, as in Fig. Figure 1 shows a component in the form of a rectangular plane. In other words, it has one main surface. 3A and the other main surface 3B the upper insulating circuit board 3 a rectangular shape, as in Fig. 1 shown.

[0023] The upper insulating circuit board 3 exhibits an insulating substrate 3C , a lower surface pattern 3P1 , which is located on a main surface of the insulating substrate 3C is formed, which is a lower side in Fig. 2A and Fig. 2B is closer, and an upper surface pattern 3P2 , which is located on a main surface of the insulating substrate 3C is formed, which is one upper side in Fig. 2A and Fig. 2B is closer. For example, a surface is created by connecting the lowest area of ​​the upper insulating circuit board. 3 in Fig. 2A and Fig. 2B is formed as one main surface 3A defined, and a surface created by connecting a top area of ​​the upper insulating circuit board 3 in Fig. 2A and Fig. 2B is formed, is considered the other main surface 3B defined. Therefore, the other main surface serves 3B as one of the top surfaces of the upper surface pattern 3P2 in an area where the upper surface pattern 3P2 is formed, and the other main surface 3B serves as the uppermost surface of the insulating substrate 3C in an area where the upper surface pattern 3P2 is not formed. It should be noted that, like the upper surface pattern 3P2 is arranged like a form and a number of the same, in Fig. 1 is shown in a simplified way, and it can actually differ from the one in Fig. Distinguish in the way shown in point 1.

[0024] More precisely, as in Fig. 4 shows a distance G1 from the other main surface 2B the lower insulating circuit board 2, which are located here on the insulating layer 2D but is arranged on the upper surface pattern 2P It can be arranged to one main surface 3A the upper insulating circuit board 3 , which are shown here on the lower surface pattern 3P1 but is arranged on the insulating substrate 3C The spacing can be arranged, preferably, for example, approximately 1.0 mm (0.8 mm or more and 2.0 mm or less). It should be noted that in practice, the spacing G1 is often set to 1.28 mm. Furthermore, the lower surface pattern can be... 3P1 and the upper surface pattern 3P2 be designed so that they are spaced apart from each other along the main surfaces of the insulating substrate 3C are arranged. Furthermore, it is preferred that there be a narrow gap G2 between the other main surface. 4B of the semiconductor element 4 and the one main surface 3Athe upper insulating circuit board 3 for example, approximately 0.5 mm (0.3 mm or more and 0.7 mm or less).

[0025] The insulating substrate 3C is a component in the form of a flat plate made of an insulating material such as a ceramic or resin material. Furthermore, the lower surface pattern 3P1 and the upper surface pattern 3P2 each a thin layer of a metal such as copper, which is placed on the insulating substrate 3C are trained.

[0026] The semiconductor element 4 is a component with an attached power element such as an IGBT (insulated-gate bipolar transistor), a MOSFET (metal-oxide-semiconductor field-effect transistor), and an FWDi (freewheeling diode). The semiconductor element 4A semiconductor is a chip-shaped component, for example, made from a single crystal of silicon (Si) or silicon carbide (SiC) or the like. 4 However, it is not limited as such and can be formed from a so-called wide bandgap semiconductor such as gallium nitride (GaN) or diamond, which has a wider bandgap than silicon.

[0027] The semiconductor element 4 has one main surface 4A as a main surface on a lower side in Fig. 2A and Fig. 2B to Fig. 4 and the other main surface 4B opposite one main surface 4A , i.e. as a main surface on a top side in FIG. Fig. 2A and Fig. 2B to Fig. 4. The semiconductor element 4 is between the lower insulating circuit board 2 and the upper insulating circuit board3 arranged and thus embedded, which are arranged so that they are connected to each other with a distance between them in the vertical direction in Fig. 2A and Fig. 2B overlap. One main surface 4A of the semiconductor element 4 is electrically connected to the lower insulating circuit board 2 connected, and the other main surface 4B of the semiconductor element 4 is electrically connected to the upper insulating circuit board 3 connected. In particular, one main surface is 4A of the semiconductor element 4 and the upper surface pattern 2P the lower insulating circuit board 2 via a first connecting material 6A They are electrically connected to each other. The other main surface is similar. 4B of the semiconductor element 4 and the lower surface pattern 3P1 the upper insulating circuit board 3via a second connecting material 6B They are electrically connected to each other. It is preferred that the first connecting material 6A and the second connecting material 6B For example, they can consist of a solder material for die bonding, but they are not limited to this and can be a bonding material containing fusible silver or copper particles. A fusible bonding material as the first bonding material 6A and the second connecting material 6B Using a different material allows for a longer lifespan than using solder. If the semiconductor element... 4 If silicon carbide, which allows operation at high temperatures, is used, then from the standpoint of exploiting the advantage of its properties, the effect of using a fusible bonding material as the first bonding material can be considered. 6A and the second connecting material 6B, to the semiconductor element 4 to provide a longer lifespan, and will be further improved.

[0028] The lower insulating circuit board 2 is located in the lowest part of the area enclosed by the housing 1 is surrounded, and is attached to the casing 1 connected, thereby the case 1 and the lower insulating circuit board 2 a component in the shape of a container. Thus, the lower insulating circuit board has 2 a surface with at least one area that is adjacent to a surface of the housing 1 is connected, forming a component in the shape of a container, as described above. The area enclosed by the housing 1 is surrounded by the sealing material 5filled so that the interior of the component is in the form of a container, i.e., an area in which the upper insulating circuit board is located. 3 , the semiconductor element 4 and the like are arranged, fills. The sealing material 5 is a commonly known gel or similar substance that has solidified, but it can also be an epoxy resin in liquid form.

[0029] In the performance module 101 The upper insulating circuit board 3 an injection port 7 on, which is thereby formed as a hole that extends from one main surface 3A extends to the other main surface 3B opposite it. In Fig. 1 and Fig. 2A and Fig. 2B is one injection port. 7 in a top view in the center of the upper insulating circuit board 3 provided for and extends from one main surface 3Aof the lower surface pattern 3P1 to the other main surface 3B of the upper surface pattern 3P2 and thus penetrates the upper insulating circuit board. 3 completely in the direction of their thickness.

[0030] As in Fig. Shown in 1 is the injection port. 7 preferably circular in a top view. This is because, as described below, when the sealing material 5 into the case 1 A nozzle is provided for injecting the sealing material. 5 into the injection opening 7 is introduced, and the injection port 7 The opening, which is circular in a top view, allows the nozzle to be easily inserted. Since the nozzle is inserted as described above, it is further preferred that the injection opening be... 7a size that, in a top view, is larger than the diameter of the nozzle. Furthermore, although it is preferred that there is essentially only one injection orifice, 7 in the middle of the upper insulating circuit board 3 As explained above, the design, viewed from above, features a plurality of injection openings. 7 They must be designed so that they are spaced apart from each other. Furthermore, the injection opening can be, as described below, 7 in another area of ​​the upper insulating circuit board 3 be formed as the middle of it in a top view.

[0031] A lead 1E of the case 1 is on the inner wall surface 1C of the housing 1 slightly above the top surface of the upper insulating circuit board 3 , i.e., in particular the other main surface 3B, trained. More precisely, as in Fig. 4 shows a distance G3 from the other main surface 3B the upper insulating circuit board 3 , which are shown here on the upper surface pattern 3P2 but is arranged on the insulating substrate 3C It may be arranged to a lowest area of ​​the projection 1E Preferably, for example, G2 or less. It should be noted that the distance G3 is not necessarily present, and it may not exist at all. That is, the lowest surface of the projection. 1E and an area of ​​the surface of the upper insulating circuit board 3 can touch each other.

[0032] The lower insulating circuit board 2 and the upper insulating circuit board 3 are arranged in the area enclosed by the housing 1is surrounded, so that normally the lower and upper insulating circuit boards 2 and 3 no contact with the inner wall surface 1C of the housing 1 exhibit and with a distance from the inner wall surface 1C of the housing 1 are arranged. The lead 1E However, it extends from the inner wall surface 1C towards the area enclosed by the housing. 1 is surrounded, i.e. in the direction of one side where the upper insulating circuit board is located. 3 and the like are arranged. For this reason, the projection extends 1E partially to an area that, in a top view, is connected to the lower insulating circuit board. 2 or the upper insulating circuit board 3 overlaps. Therefore, as in Fig. Figure 1 shows an area of ​​the upper insulating circuit board. 3 , which is shown in a top view of a longer side of the casing 1is facing, with the lead 1E It is covered when viewed from above and cannot be visually detected.

[0033] As in Fig. 1 and Fig. 2A and Fig. As shown in 2B, the lead extends 1E preferably only from at least one area of ​​the inner wall surface 1C on a longer side of the housing 1 in the shape of a rectangle, i.e., having one longer and one shorter side in a top view. As in Fig. 1 and Fig. As shown in 3, the lead extends 1E preferably not from the inner wall surface 1C on the shorter side of the housing 1 In top view, it is rectangular in shape. Thus, as in Fig. Figure 1 shows an area of ​​the upper insulating circuit board. 3 , the shorter side of the case 1 is facing away from the front, not with the projection in the top view 1EIt is covered when viewed from above and is therefore fully visible. As in Fig. As shown in 2A, in the present embodiment the projection 1E with the case 1 trained in one piece. That means the advantage 1E is made of a material that matches that of the casing 1 is identical. The advantage 1E can originate from only one area of ​​the inner wall surface 1C on the longer side of the housing 1 extend in the form of a rectangle or can extend from the entirety thereof.

[0034] As in Fig. As shown in section 3, a surface area extends. 1F from (at least an area of) the inner wall surface 1C on the longer side of the housing 1 in the direction of the area that is enclosed by the housing 1 is surrounded. The area resting on it 1F is below the lead 1E in Fig. 3 trained. The surface area 1F is an area located on the other main surface 2B the lower insulating circuit board 2 in contact with an area (e.g. an outermost area) of the other main surface 2B in a top view. It should be noted that the contact area 1F in a top view showing the lower insulating circuit board 2 overlapping at an outermost area, which makes contact with the other main surface 2B the lower insulating circuit board 2 has, and the area on which it rests 1F extends to an area that, in a top view, is connected to the upper insulating circuit board. 3 overlaps. Although basically the contact area 1F with the case 1If it is formed in one piece, it is not limited as such and can be designed in such a way that it deviates from the casing. 1 differs.

[0035] Furthermore, the performance module 101 further an external output connection 8 open. The external output port 8 is a component for enabling an electrical connection between an interior of the power module 101 and an external one thereof. That is, the external output port. 8 allows an electrical signal to enter the semiconductor element 4 , which is in the performance module 101 is ordered to be entered and output by him. Accordingly, as in Fig. 2B shows the external output port 8 to the upper surface pattern 3P2 the upper insulating circuit board 3 with a third connecting material 6Csimilar to a soldering material, like the first joining material 6A and the second connecting material 6B tied together.

[0036] As in Fig. 1 and Fig. As shown in 2, it is preferred that the external output port 8 adjacent to the ledge 1E is arranged. That is, just like the lead 1E is the external output port 8 , adjacent to the ledge 1E is arranged, in a top view, in an area on the longer side of the housing 1 , arranged in this area with reference to the direction of the longer side. A plurality of external output connections. 8 can be arranged so that they are spaced apart from each other in the direction of the longer side of the housing 1 are arranged. In Fig. 1 represents two or three external output ports 8arranged adjacent to each other in the direction of the longer side.

[0037] As in Fig. As shown in 2B, the external output port 8 a vertically extending area 8A, which extends in a vertical direction in Fig. 2B extends, in which the housing 1 extends a horizontally extending area 8B, which extends in one direction to the right / left in Fig. 2B as along a main surface 3A the upper insulating circuit board 3 extends, and a curved area 8C, which connects to the external output port 8 bends at an intermediate point. The vertically extending area 8A has a major portion of it in the body of the housing. 1 Hidden away, with only a very uppermost end area exposed by the casing 1 up. The vertically extending area 8A, which is from the housing 1If exposed, it can be electrically connected to an exterior of the power module. 101 to be connected. The horizontally extending area 8B has only one region relatively close to the curved area 8C, which is located in the housing. 1 is hidden, and has a remainder with a main area exposed by it and in which the casing 1 is arranged in the surrounding area. And the main area of ​​the remainder extends in the same direction as the projection. 1E and is electrically connected, for example, to an area (or the upper surface pattern) 3P2 ) the upper insulating circuit board 3 connected. As in Fig. As shown in 2B, the horizontally extending area 8B of the external output connector is 8 and the upper surface pattern 3P2 the upper insulating circuit board 3 for example, through the third connecting material 6Cconnected to each other. Just like the first connecting material. 6A and the second connecting material 6B is the third connecting material 6C preferably composed of a solder material for die bonding, but is not limited to this, and can be a bonding material containing fusible silver particles or copper particles.

[0038] Reference is now made to Fig. 5 to Fig. 7A and Fig. 7B, to briefly describe a process for manufacturing the power module 101 to describe the present embodiment.

[0039] With reference to Fig. 5 will be the lower insulating circuit board. 2 , the upper insulating circuit board 3 and the semiconductor element 4 First prepared. The upper surface pattern 2P the lower insulating circuit board 2 , the lower surface pattern 3P1the upper insulating circuit board 3 and the like are formed, for example, as follows: on the other main surface 2B the insulating layer 2D and on one main surface 3A of the insulating substrate 3C A generally known printing process or the like is used, so that a metal layer is formed, for example, by printing, and then the metal layer is shaped into a desired flat form using a generally known photolithography technique or the like. However, it should be noted that the upper surface pattern 2P , the lower surface pattern 3P1 and similar components can be designed in such a way that a metal component previously shaped to a desired flat form and thickness is subsequently pressure-machined, and thus on the other main surface 2B the insulating layer 2D, which has a main surface 3A of the insulating substrate 3C and is trained in the like.

[0040] The lower insulating circuit board 2 or the upper insulating circuit board 3 is equipped with an injection port 7 as a hole extending from one main surface to the opposite main surface. This creates an injection port. 7 through the upper insulating circuit board 3 formed in a top view in the middle of it.

[0041] Next, the upper insulating circuit board is removed. 3 about one main surface 2A the lower insulating circuit board 2 connected so that they connect the semiconductor element 4 embed it in between. In particular, for example, one main surface will be embedded. 4A of the semiconductor element 4about the first connecting material 6A with the top surface of the lower insulating circuit board 2 or the upper surface pattern 2P connected. The other main surface will then be... 4B of the semiconductor element 4 about the second connecting material 6B with the bottom surface of the upper insulating circuit board 3 or the lower surface pattern 3P1 tied together.

[0042] With reference to Fig. 6 will be a set from the lower insulating circuit board. 2 , the upper insulating circuit board 3 and the semiconductor element, which are involved in the process of Fig. 5 have been stacked on top of each other within the frame of the housing 1 housed so that they are separated from the casing 1 are surrounded. It is particularly preferred that a relatively low area of ​​the housing 1Contact with an area of ​​a surface of the lower insulating circuit board 2 , i.e., one end surface of it, and a region of part of the other main surface 2B adjacent to it, and the sentence in the case 1 to fit. Thus, if an area of ​​a surface of the housing forms 1 and an area of ​​the surface of the lower insulating circuit board 2 come into contact with each other without a gap, the areas being a component in the form of a container, and the sealing material 5 or the like can be poured into the component in the form of a container.

[0043] With reference to Fig. 7A and Fig. 7B are created by filling in the sealing material. 5 into an area in the component in the form of a container, which is separated from the housing 1 is surrounded in the step of Fig. 6 each the lower insulating circuit board 2 , the upper insulating circuit board 3 and the semiconductor element 4 in the case 1 sealed. More precisely regarding Fig. 7A and Fig. 7B, for example, a nozzle NZ for applying the sealing material 5 into the injection opening 7 introduced, which is located in the upper insulating circuit board 3 is formed, and from a tip of the nozzle NZ For example, the sealing material 5 injected in the form of a gel. Since the nozzle NZ When inserted with the tip pointing downwards, the injected sealing material flows 5 under the nozzle NZ and then on an area on the other main surface 2B the lower insulating circuit board 2, and then flows towards an area on the other main surface 3B the upper insulating circuit board 3 , as shown by a flow F indicated by an arrow in the figure. The sealing material is produced by the injection molding process described above. 5 arranged so that it covers the entire area within the housing 1 fills. The sealing material 5 , which is the interior of the component in the form of a container, which is enclosed by the housing 1 and the lower insulating circuit board 2 It is formed, fills, hardens and is thus arranged as a solid component.

[0044] It should be noted that, as described above, at least one area of ​​the inner wall surface 1C of the housing 1 the lead 1E, which extends towards the area surrounded by the housing, is designed to reach an area which, in a top view, is aligned with the upper insulating circuit board 3 overlaps. Here, the lead is 1E with the case 1 trained in one piece.

[0045] A function and effect of the present embodiment will now be described with reference to a comparative example in Fig. 8, Fig. 9A and Fig. 9B and Fig. 10A and Fig. 10B described.

[0046] With reference to Fig. 8 and Fig. 9A and Fig. 9B has a power module 901 The comparative example also basically has an arrangement similar to that of the performance module. 101of the present embodiment, and accordingly, identical components are identically marked and are not described repeatedly. However, it should be noted that the power module 901 the injection port 7 the upper insulating circuit board 3 and the one extending from the inner wall surface 1C of the housing 1 extending lead 1E , as they are in the performance module 101 The present embodiment does not have this feature. In this respect, the power module differs. 901 in an arrangement of the power module 101 .

[0047] As in Fig. 9A and Fig. 9B is shown in a process for training the power module. 901 , if the sealing material 5 The sealing material is entered as shown by an arrow F in the figures. 5from above the upper insulating circuit board 3 into the component in the form of a container extending from the housing 1 and the lower insulating circuit board 2 The data is formed and entered. The upper insulating circuit board. 3 However, the sealing material prevents it from entering an area below the upper insulating circuit board. 3 to flow, especially an area located between the upper insulating circuit board 3 and the lower insulating circuit board 2 is embedded. The sealing material then flows on. 5 , that is the one between the upper insulating circuit board 3 and the lower insulating circuit board 2 embedded area, easily flowed through a gap between the upper insulating circuit board. 3 and the inner wall surface 1C of the housing 1to an area above the upper insulating circuit board 3 This is because of the lead 1E , which interrupts the outflow, not above the upper insulating circuit board 3 is trained.

[0048] Therefore, it is less likely that the one between the upper insulating circuit board will be located. 3 and the lower insulating circuit board 2 embedded area is in a state in which the area is completely covered with the sealing material 5 is filled, and a gap in which the sealing material 5 If the sealant is missing, it will partially form in that area. If an area is partially not covered with the sealant, 5 If the system is filled and trained, a functional problem can occur, such as a leakage of fluid into the power module. 101input power of this. Therefore, it is preferable to avoid a situation in which the area is partially not covered with the sealing material. 5 is filled.

[0049] Accordingly, the performance module 101 the present embodiment with the injection port 7 as a hole in the upper insulating circuit board 3 provided, as described above, and the sealing material 5 is entered thereby. Therefore, as in Fig. 10A and Fig. 10B described, a narrow one between the upper insulating circuit board 3 and the lower insulating circuit board 2 The area can also be easily treated with a sufficient amount of the sealing material. 5 supplied and therefore densely filled with it.

[0050] Furthermore, the performance module 101 the lead 1E, located on an area of ​​the inner wall surface 1C of the housing 1 is trained to use the sealing material 5 to prevent it from easily detaching from the narrow space between the upper insulating circuit board. 3 and the lower insulating circuit board 2 embedded area to an area above the upper insulating circuit board 3 to flow. This can be a sufficient amount of the sealing material. 5 in the narrow space between the upper insulating circuit board 3 and the lower insulating circuit board 2 Keep embedded area.

[0051] However, it should be noted that, although the lead 1E and the upper insulating circuit board 3 Since they can be in contact with each other, they normally have a narrow gap of about 0.4 mm or less, which is defined by the distance G3 in Fig. As shown in section 4. This is because, although it is necessary to prevent outflow of the sealing material, 5 from the lead 1E To prevent upward movement, it is equally necessary to create an area above the upper insulating circuit board. 3 with the sealing material 5 to supply. The gap allows the area above the upper insulating circuit board to be supplied. 3 finally with the sealing material 5 is provided for. It should be noted that, as in Fig. 2A and Fig. 2B and the like were shown, the advantage 1E It has a flat shape close to a trapezoidal shape with a notched upper edge. Such a shape allows the sealing material to be applied. 5 , which finally extends into the area above the upper insulating circuit board 3when applied, it flows more smoothly and can therefore reduce the stress exerted when the sealing material is applied. 5 flows to the affected area.

[0052] To summarize the above, the lead 1E preferably an effect that is suitable for the sealing material 5 to control the sealing material 5 to prevent excessive contact with the upper insulating circuit board 3 to flow out, and the sealing material 5 to allow it to flow upwards in a necessary minimum quantity. From the standpoint of achieving this effect, it is preferred that the distance G3 between the projection 1E and the upper insulating circuit board 3 is smaller than the distances G1 and G2, which are found, for example, in Fig. Figures 4 are shown. For example, when the distance G3 is greater than the distance G2 (a gap between the semiconductor element), ion flows. 4 and the upper insulating circuit board 3 ), the sealing material 5 slightly excessively from the lead 1E upwards. However, the distance G3, which is smaller than the distance G2, increases to some extent the effect of preventing the flow of the sealing material. 5 through the distance G3.

[0053] The lead extends further 1E only from at least one area of ​​the inner wall surface 1C on the longer side of the housing 1 and does not extend from the inner wall surface 1C on the shorter side of the housing 1 That is, on the shorter side there is a wide gap between the inner wall surface 1C of the housing. 1 and the upper insulating circuit board 3trained. That's why the sealing material flows. 5 slightly from the shorter side over the upper insulating circuit board 3 from the area between the lower insulating circuit board 2 and the upper insulating circuit board 3 This allows the sealing material to... 5 also suitable via the upper insulating circuit board 3 to flow out.

[0054] The lead 1E , which extends only from the inner wall surface 1C on the longer side of the housing 1 extends and does not extend from the inner wall surface 1C on the shorter side of the housing 1 The extension is more preferred than the advantage for the following reason. 1E , which is only visible from the inner wall surface 1C on the shorter side of the housing 1 extends and does not extend from the inner wall surface 1C on the longer side of the housing1 extends: As in Fig. 7A and Fig. As shown in 7B, the sealing material is 5 from the injection port 7 , which in a top view is located at the center of the upper insulating circuit board 3 is trained (housing) 1 ), through the nozzle NZ entered, so that the sealing material 5 Distributed in waves. The applied sealing material thus reaches its destination. 5 the inner wall surface 1C on the longer side of the housing 1 faster than the inner wall surface 1C on the shorter side of the housing 1 This is because the injection port 7 less far from the inner wall surface 1C on the longer side of the housing 1 lies on the shorter side of the housing, as opposed to the inner wall surface 1C. 1 Accordingly, the amount of sealing material increases. 5along the inner wall surface 1C on the longer side of the housing 1 easier upwards than along the inner wall surface 1C on the shorter side of the case 1 It should be noted that the injection port 7 , located at the center of the upper insulating circuit board 3 is trained to use the sealing material 5 enables it to be distributed in waves, so that from there it reaches the inner wall surface 1C of a pair of longer sides essentially symmetrically and essentially simultaneously.

[0055] Accordingly, it is preferred that the advantage 1E on the inner wall surface 1C on the longer side of the housing 1 This is how the sealing material flows. 5 , which is due to the advantage 1E rising on the inner wall surface 1C on the longer side of the housing 1 has been prevented, as in Fig. 7B shown, in an area below the upper insulating circuit board 3 towards the inner wall surface 1C on the shorter side of the housing 1 , as in Fig. 7A shown. The sealing material 5 can therefore be placed in an area between the upper insulating circuit board. 3 and the lower insulating circuit board 2 must be entered without a gap.

[0056] Furthermore, the power module can 101 the external output port 8 partially inside the case 1 hidden features, he on the power module 101 can be attached without damaging the housing 1 to open. Further can be done, since the case 1 adjacent to the ledge 1E Its design efficiency can be improved by how it is arranged.

[0057] In the present embodiment, the projection 1E with the case 1It is formed in one piece, which allows for a reduced number of manufacturing steps and therefore a simplified process. Second embodiment

[0058] With reference to Fig. 11 has a power module 201 The present embodiment is basically an arrangement similar to that of the power module. 101 of the first embodiment, and accordingly, identical components are identically marked and are not described repeatedly. It should be noted that in the power module 201 the lower insulating circuit board 2 instead of the upper insulating circuit board 3 the injection port 7 as a hole formed through it, extending from one main surface 2A so that it extends over the other main surface 2B compared to that. It should be noted that in Fig. 11 the upper surface pattern2P in a top view at the center of the lower insulating circuit board 2 is designed, and the injection opening is accordingly 7 in an area in a top view away from the center of the lower insulating circuit board 2 trained, that is, to the right of the center of Fig. 11. However, if possible, it is more preferred, as in the case where the injection port 7 at the center of the upper insulating circuit board 3 in the performance module 101 The first embodiment is designed such that the present embodiment has the injection opening 7 also at the center of the lower insulating circuit board 2 has been formed. In this way, the sealing material can be applied in the same way as in the first embodiment. 5 , which is distributed in waves, the inner wall surface 1C on the longer side of the housing1 reach them first.

[0059] In the present embodiment, a nozzle is used to introduce the sealing material. 5 into the injection opening 7 inserted so that the nozzle has a tip pointing upwards, and the sealing material 5 It is injected from the tip. Thus, it flows, similar to how it does in Fig. 7A shows the injected sealing material 5 under the nozzle NZ and then through an area on the other main surface 2B the lower insulating circuit board 2 , and then flows towards an area on the other main surface 3B the upper insulating circuit board 3 , as shown by the river F, which is indicated by an arrow in the figure.

[0060] This injection port 7 is not limited to passing through the upper insulating circuit board3 is formed, and can be accessed through the lower insulating circuit board. 2 be trained.

[0061] For the remainder, the present embodiment is fundamentally similar to the first embodiment and will therefore not be described in detail again. Third embodiment

[0062] With reference to Fig. 12, Fig. 13 and Fig. 14. A power module of the present embodiment generally has an arrangement similar to that of the power module. 101 of the first embodiment, and accordingly, identical components are identically marked and are not described repeatedly. However, it should be noted that in the present embodiment a projection 10 , which contributes to the lead 1E corresponding to the first embodiment, on the inner wall surface 1C of the housing 1 as one of the housing 1Various components are provided.

[0063] More precisely, a power module 301 one of the first in Fig. 13 shown example of the present embodiment the advantage 10 on, which is attached to a surface of the inner wall surface 1C of the housing 1 is connected. Furthermore, with reference to Fig. 14 a power module 302 a second example of the present embodiment, a deeper 1G on an area of ​​the inner wall surface 1C of the housing 1 is trained, and the advantage 10 is in the depth 1G fitted. However, it should be noted that the lead 10 in a direction of extension, shape and other similarities to the projection 1E of the first embodiment, and it is not described in detail again.

[0064] In the present embodiment, as described above, the projection 10 on the inner wall surface 1C of the housing 1 as one of the housing 1 Various components are provided. Accordingly, the advantage can be gained in the manufacturing process. 10 then after the case 1 to be attached, and the lower insulating circuit board 2 and the upper insulating circuit board 3 The components, which are stacked in layers to form a group, are joined together, thus forming the component in the shape of a container. This allows for more precise control, enabling the distance G3 (see Fig. 4) between the upper insulating circuit board 3 and the lead 10 this has a more desirable value than in the first embodiment or the like. It should be noted that just like the projection 1Ealso the lead 10 consists of a mechanically very strong and highly insulating material, such as a well-known PPS, liquid crystal polymer or the like.

[0065] For the remainder, the present invention is fundamentally similar to the first embodiment, and accordingly it will not be described in detail again. Fourth embodiment

[0066] With reference to Fig. 15, Fig. 16, Fig. 17 and Fig. 18. A power module of the present embodiment generally has an arrangement similar to that of the power module. 101 The first embodiment is identical, and accordingly, identical components are identically marked and are not described repeatedly. However, in the present embodiment, the upper insulating circuit board is different. 3 and an area of ​​the housing 1 attached to each other with an adhesive.

[0067] More precisely, in a power module 401 one in Fig. 16 shows the first example of the present embodiment, the upper insulating circuit board. 3 and the lead 10 attached in such a way that they are secured with an adhesive. 11 are connected together. That is, an area of ​​a part of an outermost area of ​​the other main surface. 3B the upper insulating circuit board 3 in a top view, in particular, and an area of ​​the lowest surface of the projection 10 , which is arranged so that it exactly overlaps with the protruding area, are bonded with the adhesive. 11 attached to each other. In contrast, in a power module 402 one in Fig. 17 shows the second example of the present embodiment, the upper insulating circuit board. 3 and the area on top of it 1Funderneath, they are attached with an adhesive. 11 are interconnected. Furthermore, it is in a performance module 403 one in Fig. The third example shown in 18 shows the adhesive. 11 at both in Fig. 16 positions shown and the one in Fig. 17 arranged in the position shown, and the upper insulating circuit board 3 is attached in such a way that the upper insulating circuit board 3 and both the lead 10 as well as the area on which it rests 1F with the adhesive 11 are connected together.

[0068] Although Fig. 15 to Fig. 18 the lead 10 show that it differs from the case 1 While this is designed, it is not exclusive, and in each example of the present embodiment the projection can 1E , which is connected to the case 1 It is formed in one piece and can be used.

[0069] In the present embodiment, as in Fig. 16 and Fig. Figure 18 shows the upper insulating circuit board. 3 and the lead 1E , 10 with the adhesive 11 attached to each other. This allows for more precise control, enabling the distance G3 (see Fig. 4) between the upper insulating circuit board 3 and the lead 1E , 10 about which it has a desired value. Similarly, in the present embodiment, as in Fig. 17 and Fig. Figure 18 shows the upper insulating circuit board. 3 and the area on top of it 1F with the adhesive 11 attached to each other. This allows for more precise control, enabling a gap between the upper insulating circuit board. 3and the area above 1F including a desired value. Basically, the example in which the advantage 10 into the depth 1G fitted, as in Fig. 14 shown, and the example in which the advantage 10 is connected to the inner wall surface 1C, as in Fig. 16 showed equivalent effects when controlling the connection position.

[0070] Connecting and thus securing the upper insulating circuit board 3 and the lead 10 and the like together with the adhesive 11 For example, it enables a stronger connection and fastening and more stable local precision than connecting and fastening using a third connecting material. 6C , the upper insulating circuit board 3 and the external output connection 8 connects them.

[0071] If the adhesive 11 should be provided within an area where the advantage 1E , 10 with the insulating circuit board 3 overlapping, the aforementioned limitation that the distance G3 between the lead 1E and the upper insulating circuit board 3 preferably 0.4 mm or less (see Fig. 4) essentially no longer make sense. This is because, due to the adhesive, 11 There is absolutely no gap in any area where the lead 1E , 10 and the upper insulating circuit board 3 overlap with each other, and the sealing material 5 will not continue upwards through this area. However, as in Fig. 15 shows the adhesive 11 not provided within the area in which the advantage 1E , 10with the insulating circuit board 3 overlaps, and is instead only provided to an area of ​​a part of it, and normally an area remains partially free of the adhesive. 11 is, remaining. Accordingly, it is preferred to regulate the distance G3 as described above. This applies because the sealing material 5 through an area that is partially free of the adhesive. 11 is.

[0072] For the remainder, the present embodiment is fundamentally similar to the first embodiment, and accordingly it will not be described in detail again. Fifth embodiment

[0073] With reference to Fig. 19 has a power module 501 The present embodiment is basically an arrangement similar to that of the power module. 101of the first embodiment, and accordingly, identical components are identically marked and are not described repeatedly. However, it should be noted that in the power module 501 the injection port 7 through none of the upper insulating circuit boards 3 or the lower insulating circuit board 2 is formed, but rather as a hole through at least one area of ​​the housing 1 is formed so that it extends from an outermost surface 1H of the case 1 extends to the inner wall surface 1C opposite the outermost surface 1H to reach. The outermost surface 1H corresponds to a side surface located on an outermost side when the case 1 viewed from a top view, and lies essentially parallel to the inner wall surface 1C.

[0074] The injection port is preferred. 7 formed in a position which, viewed in a vertical direction, is generally the same as that of an area located between the upper insulating circuit board 3 and the lower insulating circuit board 2 is embedded, and preferably it is formed, for example, in a position which, viewed in the vertical direction, is the same as that of the semiconductor element. 4 . Furthermore, although in Fig. 19 the injection port 7 in an area on the shorter side of the case 1 is designed to have the injection opening 7 in an area on the longer side of the case 1 be trained.

[0075] In the present embodiment, the nozzle NZ into the injection opening 7 inserted so that a tip of the nozzle NZ in a top view looking downwards (i.e. towards one side where the semiconductor element 4 and the like), and the sealing material is injected through it. Just as with the other embodiments, this ensures that a narrow area between the upper insulating circuit board 3 and the lower insulating circuit board 2 is embedded with the sealing material 5 is supplied and can therefore be filled completely without any gaps.

[0076] For the remainder, the present embodiment is fundamentally similar to the first embodiment, and accordingly it will not be described in detail again. Sixth embodiment

[0077] With reference to Fig. 20 has a power module 601 The present embodiment is basically an arrangement similar to that of the power module.101 of the first embodiment, and accordingly, identical components are identically marked and are not described repeatedly. However, as through the power module 601 The output connection can be shown in the present embodiment 8 and the upper surface pattern 3P2 the upper insulating circuit board 3 via a line 13 be electrically connected. The line 13 is a thin wire made of aluminum, silver, or copper, and is preferably joined, for example, using a well-known wire-bonding technique. Although not shown, the casing 1 in the present embodiment also provided the projection 1E (or the lead) 10 ) exhibit, similar to, for example, in Fig. 2A shown.

[0078] For the remainder, the present embodiment is fundamentally similar to the first embodiment, and accordingly it will not be described in detail again. Seventh embodiment

[0079] In the present embodiment, the semiconductor devices according to the first to sixth embodiments described above are used in a power conversion device. Although the present invention is not limited to a specific power conversion device, a case in which the present invention is used in a three-phase inverter is described as a seventh embodiment.

[0080] Fig. Figure 21 is a block diagram showing an arrangement of a power conversion system in which a power conversion device according to the present embodiment is used. The Fig. The power conversion system shown in Figure 21 is from a single power source. 1000 , a power conversion device 2000 and a load 3000 composed. The power source 1000 It is a DC power supply and delivers DC power to the power conversion device. 2000 The power source 1000 It can be constructed from a variety of types, such as a DC system, a solar battery or a storage battery, or a rectifier circuit or an AC / DC converter connected to an AC system. Furthermore, the power source can... 1000 It consists of a DC / DC converter which receives DC power output from a DC system and converts it to a predetermined power.

[0081] The power conversion device 2000 is a three-phase inverter that connects the power source1000 and the burden 3000 is connected, and the power conversion device 2000 receives the direct current power supplied by the power source 1000 The power supplied converts the DC power to AC power and delivers the AC power to the load. 3000 As in Fig. As shown in 21, the power conversion device 2000 a main conversion circuit 2010 , which converts the received DC power to AC power and outputs the AC power, and a control circuit 2030 , which sends a control signal to the main conversion circuit 2010 outputs which the main conversion circuit 2010 steers, towards.

[0082] The burden 3000 is a three-phase electric motor that is driven by the alternating current power supplied by the power conversion device 2000is provided. It should be noted that the load 3000 is not limited to a specific application; it is an electric motor that is suitable for a variety of electrical applications and is used, for example, as an electric motor for a hybrid car, an electric car, a rail vehicle, an elevator, or an air conditioner.

[0083] The power conversion device is described below. 2000 Described in more detail. The main conversion circuit 2010 It features a switching element and a freewheeling diode (not shown), and when the switching element switches, the main conversion circuit converts 2010 the power source 1000 The supplied direct current power is converted into alternating current power and applied to the load. 3000 ready. Although the main conversion circuit 2010exhibiting a variety of types of specific circuit arrangements, the main conversion circuit is 2010 According to the present embodiment, a two-stage, three-phase full-bridge circuit is used and can be constructed from six switching elements and six freewheeling diodes connected antiparallel to their respective switching elements. The main conversion circuit 2010 has at least one of the switching elements and freewheeling diodes that consist of a semiconductor module 2020 corresponding to one of the performance modules 101 , 201, 202 and 301 of the first to sixth embodiments described above. The six switching elements each have two switching elements connected in series, so that they form an upper and a lower branch, and each upper and lower branch forms each phase (i.e., a U-phase, a V-phase, and a W-phase) of the full bridge circuit. Each upper and lower branch has an output terminal, that is, the main conversion circuit. 2010 has three output terminals that are connected to the load 3000 are connected.

[0084] Furthermore, the main conversion circuit 2010 a driver circuit (not shown) which controls at least one of each of the switching elements and each freewheeling diode (hereinafter referred to as "(each) switching element"). However, the driver circuit can be located in the semiconductor module 2020 be integrated or can be separate from the semiconductor module 2020This is intended to be the case. The driver circuit generates a control signal to control the switching elements of the main conversion circuit. 2010 and places it on a control electrode of a switching element of the main conversion circuit 2010 ready. In particular, in response to a control signal from the control circuit 2030 As described below, a control signal that turns a switching element on and a control signal that turns a switching element off are output to the control electrode of each switching element. When a switching element is held in the ON state, the control signal becomes a voltage signal equal to or higher than the threshold voltage of the switching element (i.e., an ON signal), whereas when a switching element is held in an OFF state, the control signal becomes a voltage signal equal to or lower than the threshold voltage of the switching element (i.e., an OFF signal).

[0085] The control circuit 2030 controls the switching elements of the main conversion circuit 2010 , so that the load 3000 is supplied with the desired power. In particular, the control circuit calculates 2030 based on the load 3000 The power to be provided is a time at which each switching element of the main conversion circuit 2010 It should be switched on (i.e., an ON time). For example, it can be the main conversion circuit. 2010 Controlled by a PWM controller, which modulates the ON time of the switching element according to the output voltage. And the control circuit 2030 It sends a control command (a control signal) to the driver circuit, which controls the main conversion circuit. 2010The circuit contains a control signal such that the ON signal is output to a switching element to be switched on at any given time, and the OFF signal is output to a switching element to be switched off at any given time. In response to this control signal, the driver circuit outputs either the ON signal or the OFF signal as a control signal to the control electrode of each switching element.

[0086] In the power conversion device according to the present embodiment, the power module according to the first to sixth embodiments is defined as the switching elements and freewheeling diodes of the main conversion circuit. 2010 applied, and it can have an effect such as better filling of an area between the lower insulating circuit board. 2 and the upper insulating circuit board 3 with the sealing material 5 can be achieved.

[0087] Although the present embodiment describes an example in which the present invention is applied in a two-stage, three-phase inverter, the present invention is not limited thereto and is applicable to a variety of types of power conversion devices. While the power conversion device in the present embodiment is described as a two-stage power conversion device, it can be a three-stage or multi-stage power conversion device, and if power is supplied to a single-phase load, the present invention can be applied to a single-phase inverter. In a case where electrical power is supplied to a DC load or the like, the present invention can also be applied to a DC / DC converter and an AC / DC converter.

[0088] Furthermore, the power conversion device to which the present invention is applied is not limited to the case described above in which a load is an electric motor, and can, for example, also be used as a power supply device for an electrical discharge processing machine, a laser processing machine or an induction cooker or a contactless device power supply system, and can even be used as a power adaptor for a photovoltaic energy generation system, an energy storage system and the like.

[0089] The features described in each of the embodiments described above (in each example included in each of the embodiments described above) can be applied in a suitable combination within a technologically consistent scope.

[0090] Although the present invention has been described and illustrated in detail, it is clearly understood that it is to be taken only as an illustration and example and not as a limitation, the scope of which is defined by the terms of the attached claims.

[0091] In summary, a power semiconductor device 101 a case 1 , a first insulating circuit board 2 , a second insulating circuit board 3 and a sealing material 5 The first insulating circuit board. 2 is arranged in such a way that it is separated from the casing 1 is surrounded. The second insulating circuit board 3 is from the case 1 surrounded and with a distance from the first insulating circuit board 2 arranged so that a semiconductor element 4between the first insulating circuit board 2 and the second insulating circuit board 3 is embedded. The sealing material 5 fills an area that is separated from the housing 1 is surrounded. The first or second insulating circuit board. 2 or 3 has a hole 7 provided, extending from one main surface to the other main surface opposite the first main surface. Of at least one area of ​​an inner wall surface 1C of the housing. 1 a promontory extends 1E , which extends to an area that, in a top view, is connected to the first or second insulating circuit board 2 or 3 overlapping, in the direction of the area enclosed by the housing 1 is surrounded. Reference symbol list 1 case 1A Main surface 1B Main surface 1D lower surface 1E advantage 1F surface area 1G Deepening 1H outermost surface 2 first insulating circuit board 2A Main surface 2B Main surface 2C metal base plate 2D insulating layer 2P upper surface pattern 3 second insulating circuit board 3A Main surface 3B Main Surface 3C insulating substrate 3P1 lower surface pattern 3P2 upper surface pattern 4 Semiconductor element 4A Main surface 4B Main surface 5 Sealing material 6A, 6B, 6C Connecting material 7 Injection port, hole 8 external output ports 10 lead 11 Adhesives 13 Management 101, 201, 301, 302, 401, 402, 403, 501, 601, 901 Power semiconductor device 1000 power source 2000 power conversion device 2010 Main Conversion Circuit 2020 Semiconductor Module 2030 control circuit 3000 Last NZ nozzle QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2016025154

[0002] JP 2013074035

[0002] JP 2015159258

[0002]

Claims

[1] Power semiconductor device (101, 201, 301, 302, 401, 402, 403, 501, 601), comprising: a housing (1); a first insulating circuit board (2) arranged so that it is surrounded by the housing (1); a second insulating circuit board (3) surrounded by the housing (1) and arranged at a distance from the first insulating circuit board (2) such that a semiconductor element (4) is embedded between the first insulating circuit board (2) and the second insulating circuit board (3); and a sealing material (5) which fills an area surrounded by the housing (1), wherein the first or second insulating circuit board (2 or 3) has a hole (7) extending from one main surface to reach the other main surface opposite the first main surface, wherein a projection (1E, 10) extends from at least one area of ​​an inner wall surface (1C) of the housing (1) towards the area surrounded by the housing (1), which extends to an area overlapping with the first or second insulating circuit board (2 or 3) in a top view. [2] Power semiconductor device (101) according to claim 1, further comprising an external output terminal (8) which enables an electrical signal to be input into and output by the semiconductor element (4), wherein the external output terminal (8) is concealed in the housing (1) and is also arranged adjacent to the projection (1E, 10). [3] Power semiconductor device (101) according to claim 1 or 2, wherein the projection (1E) is formed in one piece with the housing (1). [4] Power semiconductor device (301, 302) according to claim 1 or 2, wherein the projection (10) on the inner wall surface (1C) of the housing (1) is provided as a component that is distinct from the housing (1). [5] Power semiconductor device (401, 402, 403) according to any one of claims 1 to 4, wherein the second insulating circuit board (3) and the projection (1E, 10) are attached to each other with an adhesive (11). [6] Power semiconductor device (402, 403) according to any one of claims 1 to 5, wherein from at least one area of ​​the inner wall surface (1C) of the housing (1) a contact area (1F) extends in the direction of the area surrounded by the housing (1), which is in contact with the other main surface of the first insulating circuit board (2). the second insulating circuit board (3) and the surface area (1F) are attached to each other with an adhesive (11). [7] Power semiconductor device (101) according to any one of claims 1 to 6, wherein the housing (1) has a rectangular shape in a top view, having one longer side and one shorter side, and the projection (1E, 10) extends only from at least one area of ​​the inner wall surface (1C) on the longer side of the housing (1). [8] Power semiconductor device (501), comprising: a housing (1); a first insulating circuit board (2) arranged so that it is surrounded by the housing (1); a second insulating circuit board (3) surrounded by the housing (1) and arranged at a distance from the first insulating circuit board (2) such that a semiconductor element (4) is embedded between the first insulating circuit board (2) and the second insulating circuit board (3); and a sealing material (5) which fills an area surrounded by the housing (1); wherein the housing (1) has at least one area with a hole (7) extending from an outermost surface (1H) of the housing (1) such that it reaches an inner wall surface (1C) opposite the outermost surface (1H), wherein a projection (1E, 10) extends from at least one area of ​​the inner wall surface (1C) of the housing (1) towards the area surrounded by the housing (1), which extends to an area which overlaps with the first or second insulating circuit board (2 or 3) in a top view. [9] Power conversion device (2000), comprising: a main conversion circuit (2010) comprising a power semiconductor device according to any one of claims 1 to 8 and configured to convert and output received power; and a control circuit (2030) which is set up to output a control signal which controls the main conversion circuit (2010) to the main conversion circuit (2010). [10] Method for manufacturing a power semiconductor device comprising: Connecting a second insulating circuit board (3) via a main surface of a first insulating circuit board (2) such that a semiconductor element (4) is embedded between the first insulating circuit board (2) and the second insulating circuit board (3); Arrange the first insulating circuit board (2), the semiconductor element (4) and the second insulating circuit board (3) so that they are enclosed by a housing (1); and Sealing the semiconductor element (4) by introducing a sealing material (5) into an area surrounded by the housing (1), Forming a hole (7) through the first or second insulating circuit board (2 or 3) such that it extends from one main surface to the other main surface opposite the one main surface, Forming at least one area of ​​an inner wall surface (1C) of the housing (1) of a projection (1E, 10) which extends to an area which overlaps with the first or second insulating circuit board (2 or 3) in a top view, such that it extends in the direction of the area which is surrounded by the housing (1). [11] Method for manufacturing a power semiconductor device according to claim 10, wherein the projection (1E) is formed in one piece with the housing (1). [12] Method for manufacturing a power semiconductor device according to claim 10, wherein the projection (10) on the inner wall surface (1C) of the housing (1) is provided as a component that is distinct from the housing (1).

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