Semiconductor devices with resistance reduction through conductive layer and methods for their production

Abstract

Device (10) comprising: a first semiconductor fin (36); a first gate stack (38) on side walls and a top surface of the first semiconductor fin (36), wherein the first gate stack (38) comprises: - a high-k dielectric layer (164); - a work function layer (168) overlapping a first bottom section of the high-k dielectric layer (164); and - a first barrier layer (170) that overlaps a second soil section of the emergence work layer (168); and - a first low-resistance metal layer (180) overlapping the work function layer (168) and the first barrier layer (170) and directly contacting the work function layer (168) and the first barrier layer (170), wherein the first low-resistance metal layer (180) has a first resistivity value that is lower than the second resistivity values ​​of both the work function layer (168) and the first barrier layer (170); and a first gate spacer (146) that contacts a side wall of the first gate stack (38).