Semiconductor device

The semiconductor device design addresses the challenge of high thermal conductivity and insulation by strategically placing an insulating plate externally on one side and omitting it on the other, enhancing heat dissipation and insulation while minimizing cost.

DE102020110616B4Active Publication Date: 2026-01-15MITSUBISHI ELECTRIC CORP
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Patent Information

Application Number
DE102020110616
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2019-04-26
Filing Date
2020-04-20
Publication Date
2026-01-15
Estimated Expiration
2040-04-20

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Abstract

Semiconductor device (1, 2, 3, 4, 5), comprising: - a first semiconductor element (101); - a second semiconductor element (102); - a ladder frame (108), - which includes a die pad (121), - wherein the die pad (121) comprises a mounting surface (131) and a rear surface (132), - wherein the mounting surface (131) comprises a first mounting area (141) where the first semiconductor element (101) is mounted, and a second mounting area (142) where the second semiconductor element (102) is mounted, - wherein the rear surface (132) comprises a first rear area (151) located on a side opposite the first mounting area (141) and a second rear area (152) located on a side opposite the second mounting area (142), - wherein the first semiconductor element (101) and the second semiconductor element (102) are arranged on a coplanar area of ​​the die pad (121); - a casting resin (109), - which has the first semiconductor element (101), the second semiconductor element (102) and the die pad (121) encapsulated in the casting resin (109), - wherein the casting resin (109) is in direct contact with the second rear area (152); and - one insulation panel (110), - which is arranged on the first rear area (151) and not on the second rear area (152) in such a way that it is exposed to the outside from the casting resin (109), - wherein the insulation plate (110) has a higher thermal conductivity than the thermal conductivity of the casting resin (109).
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Citation Information

Patent Citations

  • power semiconductor device

    DE102008025705A1

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    DE112014006142T5

  • SEMICONDUCTOR COMPONENT

    DE112018003419T5

  • Mold resin-sealed power semiconductor device having insulating resin layer fixed on bottom surface of heat sink and metal layer on the resin layer

    US20040089928A1