Semiconductor device

Abstract

Semiconductor device comprising: - a semiconductor element (3) housed in a casing (10); - a terminal electrode (5) electrically connectable to an outer surface of the casing (10); and - internal wiring (9) formed in the casing (10) electrically connecting the semiconductor element (3) and the terminal electrode (5), wherein: - the internal wiring (9) comprises a fuse section (6) formed in a portion of the internal wiring (9) and configured to melt upon overcurrent; - the fuse section (6) contains a plurality of metal wires (7, 7A-D) arranged in parallel; - of the plurality of metal wires (7, 7A-D), a first metal wire (7A, 7C) has a higher resistance than a second metal wire (7B, 7D) which is located on an outer surface relative to the first metal wire (7A, 7C).- a relation expression (Imax - Imin) / (I / n) > 50% is satisfied, - I denotes a value of a current flowing through the plurality of metal wires (7, 7A-D) with the first and second wires (7, 7A-d), - n denotes a number of the plurality of metal wires (7, 7A-D) with the first and second wires (7, 7A-d), - Imax denotes a maximum current value of a plurality of currents, each flowing through a corresponding number of the plurality of metal wires (7, 7A-D) with the first and second wires (7, 7A-d), and - Imin denotes a minimum current value of the plurality of currents.

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