Semiconductor device and method

Abstract

Semiconductor device (100) comprising: a first redistribution line (114) and a second redistribution line (114) over a semiconductor substrate (102); a first passivation layer (138, 140) over the first redistribution line (114) and the second redistribution line (114); a first under-bump metallization structure (156A), UBM structure, over the first redistribution line (114), which is electrically coupled to it, wherein the first UBM structure (156A) extends through the first passivation layer (138, 140); a second UBM structure (156B) over the second redistribution line (114), which is electrically coupled to it, wherein the second UBM structure (156B) extends through the first passivation layer (138, 140), wherein an upper surface of the second UBM structure (156B) is more convex than an upper surface of the first UBM structure (156B). Area of ​​the first UBM structure (156A) is;and a polymer layer (142) above the first passivation layer (138, 140), wherein the first UBM structure (156A) and the second UBM structure (156B) extend through the polymer layer (142), wherein the first UBM structure (156A) has a first height (H6) above the polymer layer (142), wherein the second UBM structure (156B) has a second height (H7) above the polymer layer (142), and wherein the second height (H7) is greater than the first height (H6).