Scalable structuring through layering process

DE102021114091B4Active Publication Date: 2025-03-06TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
5 Cites 0 Cited by

Patent Information

Application Number
DE102021114091
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-05-24
Filing Date
2021-06-01
Publication Date
2025-03-06
Estimated Expiration
2041-06-01

Smart Images

  • Figure 00000000_0000_ABST
    Figure 00000000_0000_ABST
Patent Text Reader

Abstract

Method (100) for manufacturing a semiconductor device, comprising: Forming (6) a dielectric layer (28) on a structure; Forming (8) an opening (30) in the dielectric layer (28) to expose an upper surface of the structure, wherein the opening (30) has a first width in the dielectric layer (28); Performing (10) an enlargement process on the dielectric layer (28) to reduce the first width of the opening (30) in the dielectric layer (28); wherein the step of performing an enlargement process comprises implanting a dopant into the dielectric layer (28), wherein the concentration of the dopant gradually decreases from an upper section of the dielectric layer (28) to a lower section of the dielectric layer (28), such that after the step of performing an enlargement process, the width of the opening (30) increases from an uppermost section of the dielectric layer (28) to a lowermost section of the dielectric layer (28); and after carrying out (10) the expansion process on the dielectric layer (28), filling the opening (30) with conductive material (37; 47) to form a conductive passage.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • FINFET DEVICE AND METHOD

    DE102020114875A1

  • Method of forming metal line in semiconductor device

    US20050014384A1

  • Semiconductor device, display driver integrated circuit including the device, and display device including the device

    US20160125833A1

  • Semiconductor structure with doped via plug and method for forming the same

    US20190157148A1

  • Metal Loss Prevention Using Implantation

    US20190371664A1