Electrical conductor, electronic assembly with electrical conductor and method for manufacturing an electronic assembly with an electrical conductor

By forming electrical conductors from dried sintered paste and using compatible insulation, the process addresses tolerance issues in electrical conductor assembly, enabling reliable and efficient manufacturing of electronic assemblies with low-inductance circuits.

DE102021116053B4Active Publication Date: 2026-05-28SEMIKRON DANFOSS GMBH
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Patent Information

Application Number
DE102021116053
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-06-22
Publication Date
2026-05-28
Estimated Expiration
2041-06-22

AI Technical Summary

Technical Problem

Existing electrical conductors with precise housing adaptations face challenges in compensating for tolerance variations during manufacturing, leading to unreliable and complex assembly processes.

Method used

Forming electrical conductors from dried, shaped sintered paste, preferably containing copper or silver, and using a compatible thermosetting material for insulation, which are sintered under controlled pressure and temperature to create top contact elements that compensate for height tolerances while ensuring good electrical and thermal conductivity.

Benefits of technology

The process allows for reliable, simple assembly of electronic assemblies with top contact elements that compensate for manufacturing tolerances, providing low-inductance circuit layouts and effective electrical connections.

✦ Generated by Eureka AI based on patent content.

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Abstract

Electrical conductor (10) with insulation (20) surrounding the electrical conductor (10), wherein - the electrical conductor (10) is a dried sintered paste comprising at least one metallic material and having a porosity in the range of 30% to 50%, - the insulation (20) is a tube surrounding the electrical conductor (10), and - the porosity of the electrical conductor (10) formed from sintered paste can be reduced to a final porosity of 5% to 40% by sintering.
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Citation Information

Patent Citations

  • Power semiconductor module with a glob-top potting compound covering a power semiconductor

    DE102015120109B4

  • Securing electronic components to substrate by subjecting the electronic component, supporting film and paste-like layer to pressure and connecting the substrate and the component by sintering

    DE102004019567B3

  • Method for creating a high-temperature and temperature-change resistant connection of a semiconductor device with a connection partner and a contact tab using a temperature-affected process

    DE102009008926A1

  • Method for producing a substrate adapter, substrate adapter and method for contacting a semiconductor element

    DE102014117246A1

  • connection substrate

    DE112017001260T5