Acoustic volume wave device with raised frame structure

Abstract

An acoustic volume wave device (10; 20A; 20B; 30; 50; 60; 70; 80; 90; 100; 110; 120; 130; 140; 150; 160; 170; 180; 190; 200; 210), designed to generate an acoustic volume wave, with an elevated frame of multiple degrees of steepness, comprising: a first electrode (12); a second electrode (14); a piezoelectric layer (11) arranged between the first electrode (12) and the second electrode (14); and an elevated frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) designed to reduce lateral energy outflows from an acoustically active main region (21; MAIN REGION) of the acoustic volume wave device, which is tapered on opposite sides, wherein the elevated frame structure of multiple degrees of steepness (RaF1; RaF2;RaF3) has a first raised frame layer (15) and a second raised frame layer (16), the second raised frame layer (16) extending beyond the first raised frame layer (15) on the opposite sides, and the acoustically active main region (21; MAIN REGION) is exposed by the first and second raised frame layers (15; 16).

Description

CROSS-REFERENCE TO PRIORITY REGISTRATION

[0001] Any application claiming foreign or domestic priority, as indicated in the application for the present application, is hereby incorporated by reference pursuant to 37 CFR § 1.57. This application claims priority from U.S. Provisional Patent Application No. 63 / 080,530, filed on September 18, 2020, entitled “BULK ACOUSTIC WAVE DEVICE WITH RAISED FRAME STRUCTURE,” the entirety of which is incorporated herein by reference. BACKGROUND Technical area

[0002] Embodiments of this disclosure relate to acoustic wave devices and, in particular, to acoustic volume wave devices. Description of related technology

[0003] Acoustic wave filters can be used in electronic high-frequency systems. For example, filters in the high-frequency front end of a mobile phone may include acoustic wave filters. An acoustic wave filter can filter a high-frequency signal. An acoustic wave filter can be a bandpass filter. A multiple of acoustic wave filters can be arranged as a multiplexer. For example, two acoustic wave filters can be arranged as a duplexer.

[0004] An acoustic wave filter can incorporate a variety of acoustic wave resonators arranged to filter a high-frequency signal. Examples of acoustic wave filters include surface acoustic wave (SAW) filters and bulk acoustic wave (BAW) filters. BAW filters include BAW resonators. Examples of BAW resonators include film bulk acoustic wave resonators (FBARs) and solid-mounted resonators (SMRs). In BAW resonators, acoustic waves propagate within the volume of a piezoelectric layer.

[0005] For BAW devices, it is generally desirable to achieve a high quality factor (Q). However, Q in BAW devices can vary due to manufacturing variations and / or other reasons. SUMMARY OF CERTAIN ASPECTS OF THE INVENTION

[0006] The innovations described in the claims each exhibit several aspects, none of which alone is responsible for its desirable properties. Without limiting the scope of the claims, some distinctive features of this disclosure are now briefly described.

[0007] One aspect of this disclosure relates to an acoustic volume wave device with a raised frame of multiple degrees of steepness. The acoustic volume wave device comprises a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes, and a raised frame structure of multiple degrees of steepness designed to reduce lateral energy leakage from an acoustically active main region of the acoustic volume wave device. The raised frame structure of multiple degrees of steepness is tapered on opposite sides. The acoustic volume wave device is designed to generate an acoustic volume wave.

[0008] The raised frame structure with multiple degrees of steepness can enclose the acoustically active main region of the acoustic volume wave device in a top view. The raised frame structure with multiple degrees of steepness can have a flat area between two inclined areas. The raised frame structure with multiple degrees of steepness can essentially consist of inclined areas.

[0009] The raised frame structure with multiple degrees of steepness can have multiple raised frame layers. These multiple raised frame layers can include a first raised frame layer and a second raised frame layer. The second raised frame layer can extend beyond the first raised frame layer on opposite sides. The first raised frame layer can have a lower acoustic impedance than the piezoelectric layer and / or the second raised frame layer. The first raised frame layer can be an oxide layer, and the second raised frame layer can be metallic. The first raised frame layer can be a silicon dioxide layer, and the second raised frame layer can be metallic. The first raised frame layer can be positioned between the first and second electrodes. In some variants, the second electrode can be positioned between the first and second raised frame layers.The second raised frame layer can have a first taper angle on a first side and a second taper angle on a second side, with the first and second taper angles being in a range between 5° and 45°.

[0010] The raised frame structure with multiple degrees of steepness can be a convex structure with respect to the piezoelectric layer.

[0011] The acoustic volume wave device can be an acoustic thin-film volume resonator.

[0012] Another aspect of this disclosure relates to an acoustic wave filter comprising an acoustic volume wave device with a raised frame of multiple degrees of steepness. The acoustic wave filter includes an acoustic volume wave device and at least one additional acoustic volume wave device, which together are designed to filter a high-frequency signal. The acoustic volume wave device comprises a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes, and a raised frame structure of multiple degrees of steepness designed to reduce lateral energy leakage from an acoustically active main region of the acoustic volume wave device. The raised frame structure of multiple degrees of steepness is tapered on opposite sides.

[0013] The at least one additional acoustic volume wave device may include a second acoustic volume wave device which has a second raised frame structure of multiple degrees of steepness that is tapered on opposite sides.

[0014] The raised frame structure with multiple degrees of steepness can have a first raised frame layer and a second raised frame layer. The first raised frame layer can be an oxide layer, and the second raised frame layer can be metallic. The second raised frame layer can extend beyond the first raised frame layer on opposite sides.

[0015] Another aspect of this disclosure relates to a wireless communication device comprising an acoustic wave filter and an antenna operatively connected to the acoustic wave filter. The acoustic wave filter includes an acoustic volume wave device. The acoustic volume wave device comprises a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes, and a raised frame structure of multiple degrees of steepness designed to reduce lateral energy leakage from an acoustically active main region of the acoustic volume wave device. The raised frame structure of multiple degrees of steepness is tapered on opposite sides.

[0016] The wireless communication device could be a mobile phone. The acoustic wave filter could be included in a multiplexer.

[0017] Another aspect of this disclosure relates to an acoustic volume wave device with a raised frame of multiple degrees of steepness. The acoustic volume wave device comprises a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes, and a raised frame structure of multiple degrees of steepness. The raised frame structure of multiple degrees of steepness comprises a first raised frame layer and a second raised frame layer. The second raised frame layer extends beyond the first raised frame layer. The second raised frame layer is tapered on opposite sides. The acoustic volume wave device is designed to generate an acoustic volume wave.

[0018] The second raised frame layer can extend beyond the first raised frame layer on the opposite sides, comprising a first side oriented towards the acoustically active main region and a second side oriented away from the acoustically active main region.

[0019] The first raised frame layer can have a lower acoustic impedance than the piezoelectric layer. The first raised frame layer can be an oxide layer, and the second raised frame layer can be a metal. The second raised frame layer can be ruthenium, molybdenum, tungsten, and / or iridium.

[0020] The first raised frame layer can be made of metal. The first raised frame layer can be made of polymer.

[0021] The elevated frame structure with multiple gradients can include a flat area between two inclined areas. The elevated frame structure with multiple gradients can essentially consist of inclined areas.

[0022] The first raised frame layer can be positioned between the first and second electrodes.

[0023] The second electrode can be positioned between the first and second raised frame layers. The first raised frame layer can also be positioned between the piezoelectric layer and the second electrode.

[0024] The second raised frame layer can have a first taper angle on a first side and a second taper angle on a second side, where the first and second taper angles can each be greater than 5° and less than 45°.

[0025] The raised frame structure with multiple degrees of steepness can be a convex structure with respect to the piezoelectric layer.

[0026] The raised frame structure with multiple degrees of steepness can enclose the acoustically active main region of the acoustic volume wave device in a top view.

[0027] The acoustic volume wave device can be an acoustic thin-film volume resonator.

[0028] Another aspect of this disclosure relates to an acoustic volume wave filter comprising an acoustic volume wave device and at least one additional acoustic volume wave device, which together are designed to filter a high-frequency signal. The acoustic volume wave device includes a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes, and a raised frame structure of multiple degrees of steepness, comprising a first raised frame layer and a second raised frame layer. The second raised frame layer extends beyond the first raised frame layer. The second raised frame layer is tapered on opposite sides.

[0029] The at least one additional acoustic volume wave device may include a second acoustic volume wave device which has a second raised frame structure of multiple degrees of steepness that is tapered on opposite sides.

[0030] Another aspect of this disclosure relates to an enclosed high-frequency module comprising an acoustic wave filter designed for filtering a high-frequency signal, a high-frequency circuit element, and a housing structure enclosing the acoustic wave filter and the high-frequency circuit element. The acoustic wave filter includes an acoustic volume wave device. The acoustic volume wave device comprises a first electrode, a second electrode, a piezoelectric layer located between the first and second electrodes, and a raised frame structure of multiple degrees of steepness with a first raised frame layer and a second raised frame layer. The second raised frame layer extends beyond the first raised frame layer. The second raised frame layer is tapered on opposite sides.

[0031] The high-frequency circuit element can be a high-frequency switch. The high-frequency circuit element can be a high-frequency switching amplifier.

[0032] Another aspect of this disclosure relates to an acoustic volume wave device comprising a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes, and a multilayered raised frame structure designed to reduce lateral energy leakage from an acoustically active main region of the acoustic volume wave device. The multilayered raised frame structure includes a first raised frame layer embedded in the piezoelectric layer and a second raised frame layer. The first raised frame layer has a lower acoustic impedance than the piezoelectric layer. The second raised frame layer overlaps at least partially with the first raised frame layer in a region of the raised-frame acoustic volume wave device.The acoustic volume wave device is designed to generate an acoustic volume wave.

[0033] The second raised frame layer can be embedded in the piezoelectric layer.

[0034] The first raised frame layer can be an oxide, and the second raised frame layer can be a metal. The first raised frame layer can be a silicon dioxide layer, and the second raised frame layer can be metallic. The second raised frame layer can be embedded in the piezoelectric layer.

[0035] The multi-layered raised frame structure can be a raised frame structure with multiple degrees of steepness. The second raised frame layer can extend beyond the first raised frame layer on opposite sides of the multi-layered raised frame structure. The raised frame structure with multiple degrees of steepness can have a flat area between two inclined areas. The second raised frame layer can have a first taper angle on a first side and a second taper angle on a second side, where the first and second taper angles can be greater than 5° and less than 45°.

[0036] The multi-layered, raised frame structure can enclose the acoustically active main region of the acoustic volume wave device in a top view.

[0037] The acoustic volume wave device can be an acoustic thin-film volume resonator.

[0038] Another aspect of this disclosure relates to an acoustic volume wave filter comprising an acoustic volume wave device and at least one additional acoustic volume wave device, which together are designed to filter a high-frequency signal. The acoustic volume wave device includes a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes, and a multilayered raised frame structure comprising a first raised frame layer and a second raised frame layer. The first raised frame layer is embedded in the piezoelectric layer and has a lower acoustic impedance than the piezoelectric layer. The second raised frame layer overlaps at least partially with the first raised frame layer.

[0039] The at least one additional acoustic volume wave device can have a second acoustic volume wave device which has a second raised frame layer embedded in the piezoelectric layer of the second acoustic volume wave device.

[0040] The multilayered raised frame structure can be a raised frame structure with multiple degrees of steepness. The second raised frame layer can have a first taper angle on a first side and a second taper angle on a second side, where the first and second taper angles can each be greater than 5° and less than 45°. The first raised frame layer can be oxide, and the second raised frame layer can be metallic. The first raised frame layer can also contain a silicon dioxide layer.

[0041] Another aspect of this disclosure relates to an enclosed high-frequency module comprising an acoustic wave filter designed for filtering a high-frequency signal, a high-frequency circuit element, and a housing structure enclosing the acoustic wave filter and the high-frequency circuit element. The acoustic wave filter includes an acoustic volume wave device. The acoustic volume wave device comprises a first electrode, a second electrode, a piezoelectric layer positioned between the first and second electrodes, and a multilayered raised frame structure with a first raised frame layer and a second raised frame layer. The first raised frame layer is embedded in the piezoelectric layer and exhibits a lower acoustic impedance than the piezoelectric layer.The second raised frame layer can overlap at least partially with the first raised frame layer.

[0042] The high-frequency circuit element can be a high-frequency switch. The high-frequency circuit element can be a high-frequency switching amplifier.

[0043] To summarize the disclosure, certain aspects, advantages, and novel features of the innovations have been described here. It should be noted that not all of these advantages can necessarily be achieved in accordance with a particular embodiment. Thus, the innovations may be implemented or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein, without necessarily achieving other advantages as taught or proposed herein. List of characters

[0044] The embodiments of this disclosure will now be described in non-limiting examples with reference to the accompanying drawings. Fig. Figure 1 shows a schematic cross-sectional view of a bulk acoustic wave device (BAW) with an increased frame structure of double the degree of steepness according to one embodiment. Fig. Figure 2A shows a top view of an exemplary BAW device with a frame area that encloses an acoustically active main area. Fig. Figure 2b shows a top view of another BAW device with a frame area that encloses an acoustically active main area. Fig. Figure 3A shows a cross-sectional view of a BAW device with an increased frame structure of double the gradient. Fig. 3B shows simulation results for the BAW device of the Fig. 3A. Fig. Figure 4A shows a cross-sectional view of part of a BAW device with an elevated frame structure of uniform steepness. Fig. 4B shows simulation results for the BAW device of the Fig. 4A. Fig. Figure 5A shows a cross-sectional view of a BAW device with an increased frame structure of double the gradient. Fig. 5B shows simulation results for the BAW device of the Fig. 5A. Fig. Figure 6 shows a cross-sectional view of a surface-mounted resonator (“solidly mounted resonator”, SMR) with an elevated frame structure of multiple degrees of steepness according to one embodiment. Fig. Figure 7 shows a cross-sectional view of a BAW device with an elevated frame structure of multiple degrees of steepness according to one embodiment. Fig. Figure 8 shows a cross-sectional view of a BAW device according to a further embodiment. Fig. Figure 9 shows a cross-sectional view of a BAW device according to a further embodiment. Fig. Figure 10 shows a cross-sectional view of a BAW device with a single raised frame layer according to one embodiment. Fig. Figure 11 shows a cross-sectional view of a BAW device with a single raised frame layer according to one embodiment. Fig. Figure 12 shows a cross-sectional view of a BAW device according to a further embodiment. Fig. Figure 13 shows a cross-sectional view of a BAW device with an elevated frame structure of multiple degrees of steepness between a piezoelectric layer and a lower electrode according to one embodiment. Fig. Figure 14 shows a cross-sectional view of a BAW device with an elevated frame structure of multiple degrees of steepness according to an embodiment which has elevated frame layers on opposite sides of a piezoelectric layer. Fig. Figure 15 shows a cross-sectional view of a BAW device with a multi-layered raised frame structure according to an embodiment which has raised frame layers on opposite sides of a piezoelectric layer. Fig. Figure 16 shows a cross-sectional view of a BAW device with a multi-layered raised frame structure according to an embodiment which has a raised frame layer embedded in a piezoelectric layer. Fig. Figure 17 shows a schematic cross-sectional view of a BAW device with a chamfered multi-layered raised frame structure according to one embodiment. Fig. Figure 18 shows a schematic cross-sectional view of a BAW device with an elevated frame structure of double steepness according to an embodiment which has an elevated frame layer embedded in the piezoelectric layer. Fig. Figure 19 shows a schematic cross-sectional view of a BAW device with an increased frame structure of double the degree of steepness according to one embodiment. Fig. Figure 20 illustrates a schematic cross-sectional view of a BAW device according to one embodiment. Fig. Figure 21 illustrates a schematic cross-sectional view of a BAW device according to a further embodiment. Fig. Figure 22 illustrates a taper angle for a chamfered area of ​​a raised frame layer. Fig. Figure 23 illustrates exemplary beveled areas of a raised frame layer that do not run linearly. Fig. Figure 24 is a schematic block diagram of a conductor filter according to an embodiment which has an acoustic volume wave resonator. Fig. Figure 25 is a schematic block diagram of a grid filter according to an embodiment which has an acoustic volume wave resonator. Fig. Figure 26 is a schematic block diagram of a hybrid conductor / grid filter according to an embodiment which has an acoustic volume wave resonator. Fig. Figure 27A is a schematic block diagram of an acoustic wave filter. Fig. Figure 27B is a schematic block diagram of a duplexer which includes an acoustic wave filter according to one embodiment. Fig. Figure 27C is a schematic block diagram of a multiplexer which includes an acoustic wave filter according to one embodiment. Fig. Figure 27D is a schematic block diagram of a multiplexer which includes an acoustic wave filter according to one embodiment. Fig. Figure 27E is a schematic block diagram of a multiplexer which includes an acoustic wave filter according to one embodiment. Fig. 28, Fig. 29, Fig. 30, Fig. 31 and Fig. Figure 32 are schematic block diagrams illustrating enclosed modules according to specific embodiments. Fig. Figure 33 is a schematic block diagram of an embodiment of a mobile device. Fig. Figure 34 is a schematic block diagram of an example of a communication network. DETAILED DESCRIPTION OF CERTAIN VERSIONS

[0045] The following detailed description of certain embodiments presents various descriptions of specific embodiments. However, the innovations described herein can be embodied in a variety of ways, for example, through the definition and scope of the claims. Reference is made in this description to the drawings, in which similar reference numerals may denote identical or functionally similar elements. It should be noted that the elements shown in the figures are not necessarily drawn to scale. Furthermore, it is assumed that certain embodiments may include more elements than are shown in a drawing and / or a subset of the elements shown in a drawing. In addition, some embodiments may include any suitable combination of features from two or more drawings.

[0046] BAW devices can have raised frame structures. A raised frame structure can reduce lateral energy leakage from an acoustically active main region of an acoustic volume wave device.

[0047] Aspects of this disclosure relate to bulk acoustic wave (BAW) devices with a raised frame structure of multiple slopes. Raised frame structures of multiple slopes, as disclosed herein, can achieve high stability of the quality factor (Q) and reduce the sensitivity of Q in raised frame technology. The Q of a BAW device can be improved by combining a multi-layered raised frame structure with a beveled raised frame. This Q can be a Qp of the BAW device, where Qp represents a quality factor at the antiresonant frequency. Raised frame structures of two slopes, as disclosed herein, can improve the stability of Q and likewise reduce the sensitivity of Q to the raised frame.A raised frame structure with two slopes can compensate for energy reflections from runoff compared to a raised frame structure with a uniform slope. Therefore, a raised frame structure with two slopes can provide better performance in certain applications than a raised frame structure with a uniform slope.

[0048] Embodiments disclosed herein relate to BAW devices with a multi-layered raised frame structure having a plurality of gradients or inclinations. The multi-layered raised frame structure can have a first raised frame layer arranged between a lower electrode and an upper electrode of a BAW device. The multi-layered raised frame structure can further comprise a second raised frame layer arranged above the first raised frame layer. The second raised frame layer can extend beyond the first raised frame layer. The second raised frame layer can be tapered on opposite sides where it extends beyond the first raised frame layer. Tapered sections of the second raised frame layer can have a taper angle of less than 90°.For example, the taper angle can be less than 45°. The multilayered raised frame structure can have a convex structure with respect to the surface of a piezoelectric layer and / or electrode layer. The multilayered raised frame structure can have a convex structure with respect to an acoustic reflector, such as an air cavity. The multilayered raised frame structure can form a dome-like structure. The multilayered raised frame structure can enclose an acoustically active main region of a BAW device in a top view.

[0049] The first raised frame layer can have a lower acoustic impedance than the piezoelectric layer of a BAW device. The first raised frame layer can have a lower acoustic impedance than the lower electrode layer and the upper electrode layer of a BAW device. The first raised frame layer can reduce the coupling coefficient. The first raised frame layer can be an oxide. The first raised frame layer can be a metal. The first raised frame layer can be a polymer. The first raised frame layer can be an oxide, a metal, and / or a polymer. For example, the first raised frame layer can be a silicon dioxide layer (SiO2), a silicon nitride layer (SiN), a silicon carbide layer (SiC), or any other suitable material with low acoustic impedance.Since SiO2 is already used in a variety of acoustic volume wave devices, a first raised frame layer made of SiO2 can be relatively easy to produce. While the first raised frame layer can be described as an oxide in certain variants, it can also be any material suitable for a particular application.

[0050] The second raised frame layer can have a relatively high acoustic impedance. For example, the second raised frame layer can be made of ruthenium (Ru), molybdenum (Mo), tungsten (W), platinum (Pt), and / or iridium (Ir), or any suitable alloy thereof. The second raised frame layer can be a metal layer. Alternatively, the second raised frame layer can be a suitable non-metallic material with a relatively high acoustic impedance. The acoustic impedance of the second raised frame layer can be similar to or higher than the acoustic impedance of an electrode layer of the BAW device. In some cases, the second raised frame layer can be made of the same material as an electrode layer of the BAW device. The second raised frame layer can have a relatively high density.While the second raised frame layer may be referred to as a metal layer or metallic layer in certain variants, the second raised frame layer can consist of any material suitable for a particular application.

[0051] Exemplary BAW devices with elevated frame structures of multiple gradients are now explained. Any suitable principles and advantages of these BAW devices can be implemented together.

[0052] Fig. Figure 1 shows a schematic cross-sectional view of a BAW device 10 with an elevated frame structure of double the slope according to one embodiment. The BAW device 10 can generate an acoustic volume wave. The BAW device 10 can be a BAW resonator. The depicted BAW device 10 comprises an acoustically active main region MAIN REGION and a boundary region on opposite sides of the acoustically active main region in the cross-sectional view shown. Both the acoustically active main region MAIN REGION and the boundary region are enclosed by the acoustic reflector in the BAW device 10. A significant (e.g., exponential) drop in acoustic energy in the piezoelectric layer for a main mode can occur in the boundary region, relative to the acoustically active main region. In the boundary region, there is a first chamfered or inclined region RaF1, a non-chamfered orinclined area RaF2 and a second inclined area RaF3. The first and second inclined areas RaF1 and RaF3, respectively, are both enclosed by the acoustic reflector. As in . Fig. As shown in Figure 1, the first and second beveled or inclined areas RaF1 and RaF3 respectively lie above the air cavity 18. The acoustically active main region can be significantly larger than the edge region. Fig. 2A and Fig. 2B can better compare the relative dimensions of the acoustically active main region and the edge region than the cross-sectional view of the Fig. 1.

[0053] As shown, the BAW device 10 comprises a piezoelectric layer 11, a first electrode 12, a second electrode 14, a first raised frame layer 15, a second raised frame layer 16, a support substrate 17, an acoustic reflector such as an air cavity 18 and a passivation layer 19.

[0054] The piezoelectric layer 11 is positioned between the first electrode 12 and the second electrode 14. The piezoelectric layer 11 can be an aluminum nitride (AlN) layer. The piezoelectric layer 11 can be any other suitable piezoelectric layer. In the acoustically active main region MAIN REGION, the piezoelectric layer 11 overlaps both the first electrode 12 and the second electrode 14 above the air cavity 18 and is in physical contact with them. The acoustically active main region MAIN REGION is exposed by the first and second raised frame layers 15 and 16, respectively.

[0055] The first electrode 12 can have a relatively high acoustic impedance. For example, the first electrode 12 can be made of ruthenium (Ru), molybdenum (Mo), tungsten (W), chromium (Cr), platinum (Pt), iridium (Ir), and / or Ir / Pt, or any suitable alloy and / or combination thereof. Likewise, the second electrode 14 can have a relatively high acoustic impedance. The second electrode 14 can be made of Mo, W, Ru, Ir, Cr, Pt, Ir / Pt, or any suitable alloy and / or combination thereof. In certain cases, the second electrode 14 can be made of the same material as the first electrode 12. The first electrode 12 can be referred to as the lower electrode. The second electrode 14 can be referred to as the upper electrode.

[0056] The first raised frame layer 15 can have a lower acoustic impedance than the piezoelectric layer 11 of the BAW device 10. The first raised frame layer 15 can have a lower acoustic impedance than the first electrode 12 and the second electrode 14 of a BAW device 10. The first raised frame layer 15 can be an oxide, such as silicon dioxide. Such a first raised frame layer 15 can be referred to as a raised oxide frame layer. The first raised frame layer 15 can be a dielectric layer. The first raised frame layer 15 can be a metal. The first raised frame layer 15 can be a polymer. The first raised frame layer 15 can be an oxide, a metal, and / or a polymer. For example, the first raised frame layer 15 can be a SiO2 layer, a SiN layer, a SiC layer, or any other material of suitable low acoustic impedance.Since SiO2 is already used in a variety of acoustic volume wave devices, a first elevated frame layer 15 made of SiO2 can be produced relatively easily.

[0057] The second raised frame layer 16 can have a relatively high acoustic impedance. For example, the second raised frame layer 16 can comprise Mo, W, Ru, Ir, Cr, Pt, or the like, or any suitable alloy thereof. The second raised frame layer 16 can be a metal layer. In such embodiments, the second raised frame layer 16 can be referred to as the raised metal frame layer. Alternatively, the second raised frame layer 16 can comprise a suitable non-metallic material with a relatively high acoustic impedance. The acoustic impedance of the second raised frame layer 16 can be similar to or higher than the acoustic impedance of an electrode 12 and / or 14 of the BAW device 10. In some cases, the second raised frame layer 16 can comprise the same material as one of the electrodes 12 and / or 14 of the BAW device 10. The second raised frame layer 16 can have a relatively high density.The density of the second raised frame layer 16 can be similar to or higher than the density of one of the electrodes 12 and / or 14 of the BAW device 10.

[0058] In certain embodiments, the first raised frame layer 15 can be an oxide layer (e.g., a silicon dioxide layer), and the second raised frame layer 16 can be a metallic layer. In at least some such embodiments, the first raised frame layer 15 can be formed from the same material as the piezoelectric layer 19. In such cases, the second raised frame layer 16 can be formed from the same material as at least one of the electrodes 12 and 14.

[0059] In Fig. The first raised frame layer 15 and the second raised frame layer 16 are both essentially parallel to the piezoelectric layer 11 in the non-beveled region RaF2 of the frame area. The depicted second raised frame layer 16 is tapered and extends beyond the first raised frame layer 15 in the first and second beveled regions RaF1 and RaF3, respectively, of the frame area. The first beveled region RaF1 and the second beveled region RaF3 are located on opposite sides of the raised frame structure. In the Fig. In the BAW device 10 shown in Figure 1, the opposite sides are an inner side of the raised frame structure, extending towards the acoustically active main region MAIN REGION, and an outer side, pointing away from the acoustically active main region MAIN REGION. The outer side is located at or near an edge of the air cavity 18 in Fig. 1. The second raised frame layer 16 is a continuous layer extending from the first chamfered or inclined area RaF1 to the second chamfered or inclined area RaF3 in the BAW device 10. The second raised frame layer 16 has in Fig. 1. A flat or non-sloping area RaF2 and beveled or inclined areas RaF1 and RaF3.

[0060] Although embodiments disclosed herein include increased frame structures with twice the degree of steepness, all suitable principles and advantages disclosed herein can be applied in BAW devices with three or more beveled or inclined sections. While the frame section of the Fig. 1. While a raised frame structure has two beveled or inclined sections RaF1 and RaF3 and a flat or uninclined section RaF2 between the beveled or inclined sections RaF1 and RaF3, other raised frame structures with multiple degrees of steepness (e.g., raised frame structures with a relatively narrow width) can have beveled or inclined sections without a flat or uninclined section. Accordingly, a raised frame structure with multiple degrees of steepness can consist entirely or substantially of beveled or inclined sections. An example of such a raised frame structure is described in Fig. 21 shown.

[0061] All suitable principles and advantages disclosed herein can be applied to potential-free elevated frame structures, where the elevated frame structure is at a freely floating voltage level. The potential-free elevated frame structure can be electrically isolated from the electrodes of the BAW device (e.g., by a dielectric material).

[0062] A frame area can enclose the acoustically active main region of a BAW device in a top view. Fig. Figure 2A shows an exemplary frame area 22, which encloses an acoustically active main region 21 in plan view. The cross-sectional views in the drawings can be modified in certain embodiments along line AA' in Fig. 2A runs. One in Fig. BAW device 20A shown in Figure 2A has a semicircular or semi-elliptical shape in top view. The one shown in Fig. The frame area 22 shown in Figure 2A can include any of the chamfered or inclined frame areas and any of the non-chamfered or non-inclined frame areas shown in each of the cross-sectional views of the drawings. The frame area 22 can also include one or more recessed frame areas. A recessed frame area can be located between a chamfered or inclined frame area and a central part of the acoustically active main region 21. A recessed frame area can experience less mass loading than the acoustically active main region 21.

[0063] A BAW device designed in accordance with any suitable principle and advantage disclosed herein may alternatively assume any other suitable outline in plan view, such as a tetragonal shape, a tetragonal shape with rounded sides, a pentagonal shape, a pentagonal shape with rounded sides, or the like. For example, Fig. 2B is another example of a further BAW device 20B with a frame area 22 which encloses an acoustically active main region 21 in plan view. The in Fig. BAW device 20B shown in Figure 2B has a pentagonal shape with rounded sides in top view. The cross-sectional views in the drawings can be modified in certain embodiments along line BB'. Fig. 2B runs. The one in Fig. The frame area 22 shown in Figure 2B can include any of the chamfered or inclined frame areas and any of the non-chamfered or non-inclined frame areas shown in each of the cross-sectional views of the drawings. The frame area 22 of the BAW device 20B can also include one or more recessed frame areas located between one or more of the chamfered or inclined frame areas and a central part of the acoustically active main region 21.

[0064] Fig. Figure 3A shows a schematic cross-sectional view of a BAW device 30 with an increased frame structure of double the gradient. Fig. 3B shows simulation results for the BAW device 30 of the Fig. 3A, where mirrored versions of the circled raised frame structure with double the slope are provided on opposite sides of the cross-section of the BAW device 30. The simulation results apply to Q when varying the slope and thickness of a first raised silicon dioxide frame layer 15. The simulation results show a large range in which a high value for Q is achieved. These simulation results indicate that a stable value for Q can also be achieved for process changes and / or process variations. For example, the simulation results indicate that the thickness of the first raised frame layer 15 of the Fig. 3A can be adjusted without significantly affecting Q.

[0065] Fig. Figure 4A shows a cross-sectional view of a portion of a BAW device 40 with a raised frame structure of uniform steepness. In the BAW device 40, an inner side of the raised frame structure with uniform steepness extends to the acoustically active main region. The outer side of the raised frame structure 40 near an edge of the air cavity 18 has no chamfer or inclination. Fig. 4B shows simulation results for the BAW device 40 of the Fig. 4A, in which mirrored versions of the circled raised frame structure of uniform steepness are provided on opposite sides of the cross-section of the BAW device 40. The simulation results apply to Q when varying the inclination and thickness of a first raised silicon dioxide frame layer 15. The simulation results show that the simulated BAW device 40 can achieve a high value for Q. These simulation results also show a less stable Q compared to the BAW device 30 of the Fig. 3A, if device properties such as the thickness of the first raised frame layer 15 change.

[0066] Fig. Figure 5A shows a schematic cross-sectional view of part of a BAW device 50 with a raised frame structure, such that the second raised frame layer 16 extends beyond the first raised frame layer 15 towards the circled acoustically active main region. Fig. 5B shows simulation results for the BAW device 50 of the Fig. 5A, in which mirrored versions of the circled raised frame structure of double the slope are provided on opposite sides of the cross-section of the BAW device 50. The simulation results apply to Q when varying the slope and thickness of a first raised silicon dioxide frame layer 15. The simulation results indicate that the simulated BAW device 50 exhibits less desirable Q properties compared to the corresponding simulation results of the Fig. 3B or Fig. 4B has associated BAW devices 30 and 40. It may be desirable to extend the second raised frame layer 16 beyond the first raised frame layer on opposite sides of a raised frame structure.

[0067] The BAW device 10 of the Fig. Figure 1 is a film bulk acoustic resonator (FBAR). The principles and advantages disclosed herein may also apply to other BAW devices. Fig. Figure 6 illustrates a surface-mounted resonator-type (SMR-BAW) acoustic waveguide (BAW) device 60 with a raised frame structure of double the slope. The SMR-BAW device 60 incorporates a solid acoustic mirror 62 instead of an air cavity as the acoustic reflector. The solid acoustic mirror 62 is an acoustic Bragg reflector. The solid acoustic mirror 62 comprises alternating layers of low acoustic impedance 63 and layers of high acoustic impedance 64. As an example, the solid acoustic mirror 62 can have alternating silicon dioxide layers as layers of low acoustic impedance 63 and tungsten layers as layers of high acoustic impedance 64. All the principles and advantages shown herein can also apply to SMR-BAW devices.

[0068] Fig. 7 to Fig. Figure 21 shows cross-sectional views of embodiments of BAW devices with an increased frame structure of multiple gradients. In these drawings, a support substrate beneath an acoustic reflector (e.g., an air cavity) is not shown, even though a support substrate is present beneath the acoustic reflector in these embodiments. Any suitable combination of features of these embodiments can be combined with each other and / or with other embodiments disclosed herein.

[0069] Fig. Figure 7 shows a schematic cross-sectional view of a BAW device 70 with an elevated frame structure of multiple gradients according to one embodiment. As in Fig. As shown in Figure 7, the second raised frame layer 16 can extend over the first raised frame layer 15 only on one side of the first raised frame layer 15 for a first part 72 of a BAW device 70, and on both sides of the first raised frame layer 15 for a second part 74 of the BAW device 70. The first part 72 and the second part 74 of the BAW device 70 can be located on opposite sides of the acoustically active main region, as shown in Figure 7. Fig. 7 shown.

[0070] Fig. Figure 8 shows a schematic cross-sectional view of a BAW device 80 with an elevated frame structure of multiple gradients according to one embodiment. In the schematic cross-sectional view shown, the Fig. Figure 8 includes the first raised frame layer 15 on one side of the BAW device. As shown, the raised frame structure of multiple slopes of the BAW device 80 comprises a multi-layered part 82 and a single-layered part 84. The BAW device 80 is an example of a BAW device with a raised frame structure of multiple slopes, in which a raised frame layer (e.g., the first raised frame layer 15 of the BAW device 80) is provided only along a portion of the acoustically active main region of the BAW device.

[0071] Fig. Figure 9 shows a schematic cross-sectional view of a BAW device 90 with an elevated frame structure of multiple gradients according to one embodiment. In the schematic cross-sectional view shown, the Fig. Figure 9 comprises a first side comprising a single raised frame layer in a first part 92 of the BAW device 90, and a second side of the cross-sectional view comprising a two-layer raised frame layer in a second part 94 of the BAW device 90, in which the second layer projects beyond the first layer on one side. The raised frame structure of the BAW device 90 comprises a multi-layered part 94 and a single-layered part 92. In the multi-layered part 94 of the raised frame structure with multiple gradients, the second raised frame layer 16 extends beyond the first raised frame layer 15 only on one side. In the single-layered part 92 of the raised frame structure with multiple gradients, a section of the second raised frame layer 16 is thicker than in the multi-layered part 94 of the raised frame structure with multiple gradients in the BAW device 90. In the non-chamfered orIn the non-inclined area of ​​the single-layer part 92, the second raised frame layer 16 is thicker than in the multi-layer part 94.

[0072] Although some BAW devices with raised frame structure of multiple gradients taught herein have a multitude of raised frame layers, BAW devices with raised frame structure of multiple gradients may have a single raised frame layer. Fig. 10, Fig. 11 and Fig. 12 illustrate examples of such BAW devices.

[0073] Fig. Figure 10 shows a schematic cross-sectional view of a BAW device 100 with a single-layer raised frame structure according to one embodiment. The raised frame layer 16 is asymmetrical with respect to the center of the acoustically active main region of the BAW device 100 in the view shown. The BAW device 100 comprises a raised frame structure with multiple degrees of steepness and a single raised frame layer. The single raised frame layer 16 corresponds to the second raised frame layer 16 of other BAW devices disclosed herein. The raised frame layer 16 can be considered a single layer even if it is made of multiple layers of the same material. In certain embodiments, the raised frame layer 16 of the BAW device 100 can be made of the same material as the electrode 14. The raised frame layer 16 of the BAW device 100 can have a relatively high acoustic impedance.

[0074] Fig. Figure 11 shows a schematic cross-sectional view of a BAW device 110 with a single-layer raised frame structure according to one embodiment. In the BAW device 110, the raised frame layer 15 corresponds to the first raised frame layer 15 of other embodiments. The single-layer raised frame layer 15 of the BAW device 110 can, in certain embodiments, be made of the same material as the piezoelectric layer 19. The raised frame layer 15 of the BAW device 110 can have a relatively low acoustic impedance, which is lower than the acoustic impedance of the electrodes 12 and 14 and / or the piezoelectric layer 11. As shown, the raised frame layer 15 is arranged between the piezoelectric layer 11 and the electrode 14. In some other embodiments, the raised frame layer 15 can alternatively or additionally be arranged between the piezoelectric layer 11 and the electrode 12.

[0075] Fig. Figure 12 shows a schematic cross-sectional view of a BAW device 120 according to one embodiment. The BAW device 120 comprises a raised frame structure with two degrees of steepness, in which the raised frame structure is arranged between the piezoelectric layer 11 and the lower electrode 12. In the BAW device 120, the raised frame structure has a single raised frame layer 16. The raised frame layer 16 of the BAW device 120 corresponds to the second raised frame layer 16 of the BAW devices of other embodiments. As in Fig. As illustrated in Figure 12, the raised frame layer is arranged between electrodes 12 and 14.

[0076] Fig. Figure 13 shows a schematic cross-sectional view of a BAW device 130 according to one embodiment. The BAW device 130 comprises a raised frame structure with two slopes, wherein the raised frame structure has two layers arranged between the piezoelectric layer 11 and the lower electrode 12. The raised frame structure with two slopes is arranged between the electrodes 12 and 14 in the BAW device 130. In the BAW device 130, the first raised frame layer 15 is arranged between the electrode and the second raised frame layer 16. The second raised frame layer 16 comprises a section between the first raised frame layer 15 and the piezoelectric layer in the BAW device 130. The second raised frame layer 16 extends in Fig. 13 beyond the first raised frame layer 15 on opposite sides.

[0077] Fig. Figure 14 shows a schematic cross-sectional view of a BAW device 140 according to one embodiment. The BAW device 140 comprises a raised frame structure with two degrees of steepness, wherein the raised frame structure has two layers arranged between the electrodes 12 and 14 on opposite sides of the piezoelectric layer 11. In the BAW device 140, the piezoelectric layer 11 is arranged between the first raised frame layer 15 and the second raised frame layer 16, and both the first raised frame layer 15 and the second raised frame layer 16 are arranged between the electrodes 12 and 14. In the BAW device 140, the second raised frame layer 16 extends beyond the first raised frame layer 15 on opposite sides. The second raised frame layer 16 is arranged between the piezoelectric layer 11 and the second electrode 14 in the BAW device 140.The first raised frame layer 15 is arranged between the piezoelectric layer 11 and the first electrode 12 in the BAW device 140.

[0078] Fig. Figure 15 shows a schematic cross-sectional view of a BAW device 150 according to one embodiment. The BAW device 150 comprises a raised frame structure with two degrees of steepness, wherein the raised frame structure has two layers arranged between the electrodes 12 and 13 on opposite sides of the piezoelectric layer 11. In the BAW device 150, the second raised frame layer 16 extends on an inner side of the raised frame structure beyond the first raised frame layer 15 towards the acoustically active main region. On an outer side of the raised frame structure opposite the acoustically active main region in the BAW device 150, the second raised frame layer 16 does not extend beyond the first raised frame layer 15. The second raised frame layer 16 is arranged between the piezoelectric layer 11 and the first electrode 12 above the acoustic reflector in the BAW device 150.The first raised frame layer 15 is arranged between the piezoelectric layer 11 and the second electrode 14 in the BAW device 150.

[0079] Embodiments disclosed herein relate to multilayered raised frame structures designed to reduce lateral energy leakage from an acoustically active main region of the BAW device, wherein one layer of the multilayered raised frame structure is embedded in the piezoelectric layer. Exemplary embodiments with a raised frame layer embedded in a piezoelectric layer are described with respect to the Fig. 16, Fig. 18 and Fig. 20 explained.

[0080] Fig. Figure 16 shows a schematic cross-sectional view of a BAW device 160 according to one embodiment. The BAW device 160 comprises a two-layer raised frame structure in which a raised frame layer 15 is embedded in the piezoelectric layer 11. In certain applications, the piezoelectric layer 11 may have different materials on opposite sides of the embedded raised frame layer 15. For example, the piezoelectric layer 11 may have AlN on one side of the embedded raised frame layer 15, and the piezoelectric layer 11 may have scandium-doped AlN on the opposite side of the embedded raised frame layer 15. In certain cases, the piezoelectric layer 11 comprises the same material on opposite sides of the embedded raised frame structure.In the BAW device 160, the second raised frame layer 16 extends beyond the first raised frame layer 15 on an inner side of the raised frame structure towards the acoustically active main region of the BAW device 160. On an outer side of the raised frame structure opposite the acoustically active main region in the BAW device 160, the second raised frame layer 16 does not extend beyond the first raised frame layer 15.

[0081] Fig. Figure 17 shows a schematic cross-sectional view of a BAW device 170 with a multi-layered raised frame structure according to one embodiment. In the BAW device 170, the first raised frame layer 16 is embedded in the piezoelectric layer 11. The BAW device 170 is related to the BAW device 160 of the Fig. 16 similarly, except that the first raised frame layer 15 is arranged between the piezoelectric layer 11 and the first electrode 12 above the acoustic reflector in the BAW device 160.

[0082] Fig. Figure 18 shows a schematic cross-sectional view of a BAW device 180 with a raised frame structure of two degrees of steepness, which has a raised frame layer 15 embedded in the piezoelectric layer 11, according to one embodiment. The BAW device 180 is related to the BAW device 10 of the Fig. 1 similar, except that the first raised frame layer 15 is embedded in the piezoelectric layer 11 in the BAW device 10.

[0083] Fig. Figure 19 shows a schematic cross-sectional view of a BAW device 190 with an increased frame structure of double the gradient according to one embodiment. The BAW device 190 is the BAW device 10 of the Fig. 1 similarly, except that the first raised frame layer 15 is arranged between the piezoelectric layer 11 and the first electrode 12 in the BAW device 190. The BAW device 190 is similar to the BAW device 170 of the Fig. 17 similarly, except that the second raised frame layer 16 extends beyond the first raised frame layer 15 on both an inside and an outside of the raised frame structure in the BAW device 190.

[0084] Fig. Figure 20 shows a schematic cross-sectional view of a BAW device 200 according to one embodiment. In certain applications, a raised frame structure with multiple degrees of steepness can be embedded in a piezoelectric layer 11. The BAW device 200 comprises a raised frame structure with multiple degrees of steepness, in which two layers 15 and 16 of the raised frame structure are embedded in the piezoelectric layer 11.

[0085] Fig. Figure 21 shows a schematic cross-sectional view of a BAW device 210 according to one embodiment. The BAW device 210 is an example of a BAW device with a raised frame structure of multiple degrees of steepness, which consists essentially or entirely of chamfered or inclined regions RaF1 and RaF3. In such a BAW device, the raised frame structure can have a relatively small width above the acoustic reflector.

[0086] A chamfered or inclined area of ​​a raised frame layer can exhibit a taper angle α with respect to a horizontal direction in the schematic cross-sectional views shown. The taper angle α can be measured relative to an underlying layer (e.g., a piezoelectric layer and / or an electrode layer). Fig. Figure 22 illustrates a taper angle α. The taper angle α can be less than 45°. In some applications, the taper angle α can be less than 45° for an inclined section of a raised frame layer in a first chamfered region RaF1. The taper angle α can also be greater than 5° in a first chamfered region RaF1 in such applications. In such cases, the taper angle α can be in a range between approximately 5° and 45° for an inclined section of a raised frame layer in a first chamfered region RaF1. In some applications, the taper angle α can be less than 45° for an inclined section of a raised frame layer in a second chamfered region RaF3 of any of the embodiments disclosed herein. The taper angle α can also be greater than 5° in a second chamfered region RaF3 in such applications.Sometimes the taper angle α can be in a range between about 5° and 45° for an inclined section of a raised frame layer in a second chamfered area RaF3 of any of the embodiments disclosed herein.

[0087] In certain applications, the taper angle can be in a range between approximately 10° and 40° for an inclined section of a raised frame layer in a first chamfered region RaF1 and / or in a second chamfered region RaF3 of any embodiment disclosed herein. In some applications, the taper angle α can be in a range between approximately 10° and 30° for an inclined section of a raised frame layer in a first chamfered region RaF1 and / or in a second chamfered region RaF3 of any embodiment disclosed herein.

[0088] The taper angles can be approximately the same for the first and second chamfered areas RaF1 and RaF3 in certain applications. In other applications, the taper angles for the first and second chamfered areas RaF1 and RaF3 can be different. The taper angles discussed in this paragraph can be applied to any suitable BAW device disclosed herein.

[0089] Fig. Figure 23 illustrates exemplary chamfered or inclined areas of a raised frame layer, where the chamfered or inclined areas may not be linear. A non-linear chamfered or inclined area may have a convex section, a concave section, or any combination thereof. Other variations for chamfered or inclined frame layer sections are also possible.

[0090] The BAW devices disclosed herein can be implemented as BAW resonators in acoustic wave filters. Such filters can be designed to filter a high-frequency signal. In certain applications, the acoustic wave filters can be bandpass filters designed to allow a high-frequency band to pass through and attenuate frequencies outside the high-frequency band. Acoustic wave filters can be designed as bandstop filters. The acoustic volume wave devices disclosed herein can be implemented in a variety of different filter architectures. Exemplary filter architectures include a conductor filter, a grid filter, a hybrid conductor / grid filter, and the like. An acoustic wave filter can consist exclusively of BAW resonators, or of one or more BAW resonators and one or more other types of acoustic wave resonators, such as SAW resonators.BAW resonators revealed herein can be implemented in a filter that includes at least one BAW resonator and a non-acoustic inductor / capacitor component. Some exemplary filter architectures are now discussed in relation to the... Fig. 24 to Fig. 26 explained. Any suitable combination of features of the filter architectures of Fig. 24 to Fig. 26 can be implemented together and / or jointly with other filter architectures.

[0091] Fig. Figure 24 is a schematic block diagram of a conductor filter 240, which incorporates an acoustic volume wave resonator according to one embodiment. The conductor filter 240 represents an exemplary architecture that can implement a bandpass filter constructed from acoustic wave resonators. In a bandpass filter with a conductor architecture, the shunt resonators can have lower resonant frequencies than the series resonators. The conductor filter 240 can be designed to filter a high-frequency signal. As shown, the conductor filter 240 comprises acoustic wave resonators R1, R3, R5, and R7 in series, as well as acoustic wave shunt resonators R2, R4, R6, and R8, which are coupled between a first input / output terminal I / O1 and a second input / output terminal I / O2.Any suitable number of acoustic wave series resonators can be included in a conductor filter. The first input / output port I / O1 can be a transmit port and the second input / output port I / O2 can be an antenna port. Alternatively, the first input / output port I / O1 can be a receive port and the second input / output port I / O2 can be an antenna port.

[0092] One or more of the acoustic wave resonators of the conductor filter 240 can comprise an acoustic volume wave filter according to one embodiment. For example, some or all of the shunt resonators R2, R4, R6, and R8 can be BAW resonators with an increased frame of multiple degrees of transconductance according to any of the suitable principles and advantages disclosed herein. The antiresonance frequency of the shunt resonators of the conductor filter 240 can define a lower edge of the passband if the conductor filter 240 is a bandpass filter. With BAW shunt resonators with an increased frame of multiple degrees of transconductance, a high stability for a quality factor at antiresonance Qp can advantageously be achieved, as for example by the diagram of the Fig. 3B shown. Alternatively or additionally, one or more of the series resonators of the conductor filter 240 can be designed according to any suitable principle and advantage disclosed herein.

[0093] Fig. Figure 25 is a schematic block diagram of a grid filter 250, which includes an acoustic volume wave resonator according to one embodiment. The grid filter 250 represents an example architecture that can form a bandpass filter from acoustic wave resonators. The grid filter 250 can be designed to filter a high-frequency signal. As shown, the grid filter 250 comprises acoustic wave resonators RL1, RL2, RL3, and RL4. The acoustic wave resonators RL1 and RL2 are series resonators. The acoustic wave resonators RL3 and RL4 are shunt resonators. The grid filter 250 shown has a balanced input and a balanced output. One or more of the acoustic wave resonators RL1 to RL4 shown can be acoustic volume wave resonators according to any suitable principle and advantage disclosed herein.

[0094] Fig. Figure 26 is a schematic block diagram of a hybrid conductor / grid filter 260, which includes an acoustic volume wave resonator according to one embodiment. The illustrated hybrid conductor / grid filter 260 comprises acoustic series resonators RL1, RL2, RH3, and RH4, as well as acoustic shunt resonators RL3, RL4, RH1, and RH2. The hybrid conductor / grid filter 260 includes one or more acoustic volume wave resonators according to any suitable principle and advantage disclosed herein.

[0095] In some applications, an acoustic volume wave resonator may be included in a filter that also includes one or more inductors and one or more capacitors.

[0096] The principles and advantages disclosed herein can be implemented in a standalone filter and / or in one or more filters within any suitable multiplexer. Such filters can have any suitable architecture discussed herein, such as any filter architecture in accordance with those related to each of the Fig. 21 to Fig. 26 revealed principles and advantages. The filter can be a bandpass filter designed to filter a fourth-generation (4G) LTE ("Long Term Evolution") band and / or a fifth-generation (5G) NR ("New Radio") band. Examples of a standalone filter and multiplexers are given in relation to the Fig. 27A to Fig. 27E will be discussed. Any suitable principles and advantages of these filters and / or multiplexers can be implemented together. Furthermore, the acoustic volume wave resonators disclosed herein can be incorporated into filters with an increased frame of multiple degrees of transconductance, which also include one or more inductors and one or more capacitors.

[0097] Fig. Figure 27A is a schematic block diagram of an acoustic wave filter 330. The acoustic wave filter 330 is a bandpass filter. The acoustic wave filter 330 is designed to filter a high-frequency signal. The acoustic wave filter 330 has a plurality of acoustic wave resonators coupled between a first input / output terminal RF_IN and a second input / output terminal RF_OUT. The acoustic wave filter 330 comprises one or more BAW resonators with an elevated frame structure of multiple degrees of transconductance according to any of the suitable principles and advantages disclosed herein.

[0098] Fig. Figure 27B is a schematic block diagram of a duplexer 332 with an acoustic wave filter according to one embodiment. The duplexer 332 comprises a first filter 330A and a second filter 330B, which are coupled together at a common node COM. One of the filters of the duplexer 332 can be a transmit filter and the other filter of the duplexer 332 can be a receive filter. In some cases, such as in a diversity receive application, the duplexer 332 can have two receive filters. Alternatively, the duplexer 332 can have two transmit filters. The common node COM can be an antenna node.

[0099] The first filter 330A is an acoustic wave filter designed to filter a high-frequency signal. The first filter 330A comprises acoustic wave resonators coupled between a first high-frequency node RF1 and the common node COM. The first high-frequency node RF1 can be a transmitting node or a receiving node. The first filter 330A comprises one or more BAW resonators with an elevated frame structure of multiple degrees of transconductance according to any of the suitable principles and advantages disclosed herein.

[0100] The second filter 330B can be any suitable filter designed to filter a second high-frequency signal. For example, the second filter 330B can be an acoustic wave filter incorporating one or more BAW resonators with an enhanced frame structure of multiple degrees of transconductance according to any of the suitable principles and advantages disclosed herein, an LC filter, a hybrid acoustic wave-LC filter, or the like. The second filter 330B is coupled between a second high-frequency node RF2 and the common node. The second high-frequency node RF2 can be a transmitting node or a receiving node.

[0101] Although exemplary embodiments of filters or duplexers may be discussed for illustrative purposes, all suitable principles and advantages disclosed herein can be implemented in a multiplexer comprising a plurality of filters connected at a common node. Examples of multiplexers include, without loss of generality, a duplexer with three filters connected at a common node, a triplexer with two filters connected at a common node, a quadplexer with four filters connected at a common node, a hexaplexer with six filters connected at a common node, an octoplexer with eight filters connected at a common node, or the like. Multiplexers may comprise filters with different passbands.Multiplexers can have any suitable number of transmit filters and any suitable number of receive filters. For example, a multiplexer can have only receive filters, only transmit filters, or one or more receive filters and one or more transmit filters. One or more of the filters in a multiplexer can have any suitable number of BAW resonators with an elevated frame structure of multiple transconductance levels.

[0102] Fig. Figure 27C is a schematic block diagram of a multiplexer 334 with an acoustic wave filter according to one embodiment. The multiplexer 334 comprises a plurality of filters 330A to 330N, which are jointly coupled to a common node COM. The plurality of filters can have any suitable number of filters, including, for example, three filters, four filters, five filters, six filters, seven filters, eight filters, or more. Some or all of the plurality of acoustic wave filters can be acoustic wave resonators. As shown, the filters 330A to 330N can each have a fixed electrical connection to the common node COM. This can be referred to as hard multiplexing or fixed multiplexing. Filters have fixed electrical connections to the common node in hard multiplexing applications.Each of the filters 330A to 330N has a corresponding input / output connection RF1 to RFN.

[0103] The first filter 330A is an acoustic wave filter designed to filter a high-frequency signal. The first filter 330A may include acoustic wave devices coupled between a first high-frequency node RF1 and the common node COM. The first high-frequency node RF1 may be a transmitting node or a receiving node. The first filter 330A includes one or more BAW resonators with an elevated frame structure of multiple degrees of transconductance according to any of the suitable principles and advantages disclosed herein. The other filter(s) of the multiplexer 334 may include one or more acoustic wave filters, one or more acoustic wave filters comprising one or more BAW resonators with an elevated frame structure of multiple degrees of transconductance, one or more LC filters, one or more hybrid acoustic wave-LC filters, or any suitable combination thereof.

[0104] Fig. Figure 27D is a schematic block diagram of a multiplexer 336 with an acoustic wave filter according to one embodiment. The multiplexer 336 is related to the multiplexer 334 of the Fig. The 27C is similar, except that the 336 multiplexer uses switched multiplexing. In switched multiplexing, a filter is coupled to a common node via a switch. In the 336 multiplexer, switches 337A to 337N can selectively connect corresponding filters 330A to 330N electrically to the common node COM. For example, switch 337A can selectively connect the first filter 330A to the common node COM via switch 337A. Any suitable number of switches 337A to 337N can electrically connect corresponding filters 330A to 330N to the common node COM in a predefined state. Likewise, any suitable number of switches 337A to 337N can electrically isolate a corresponding filter 330A to 330N from the common node COM in a predefined state. The functionality of switches 337A to 337N can support various carrier bundling configurations.

[0105] Fig. Figure 27E is a schematic block diagram of a multiplexer 338 with an acoustic wave filter according to one embodiment. The multiplexer 338 illustrates that a multiplexer can have any suitable combination of fixed-multiplexed and switched-multiplexed filters. One or more BAW resonators with an elevated frame structure of multiple transconductance levels can be included in a filter that is fixed-multiplexed with the common node of a multiplexer. Alternatively or additionally, one or more BAW resonators with an elevated frame structure of multiple transconductance levels can be included in a filter that is switched-multiplexed with the common node of a multiplexer.

[0106] The BAW resonators described herein can be implemented in a variety of enclosed modules. Several exemplary enclosed modules are now discussed, in which all suitable principles and advantages of the BAW devices presented here can be implemented. Exemplary enclosed modules include one or more acoustic wave filters and one or more high-frequency amplifiers (e.g., one or more power amplifiers and / or one or more low-noise amplifiers, LNAs) and / or one or more high-frequency switches. The exemplary enclosed modules can include a housing that encloses the circuit elements shown. The circuit elements shown can be arranged on a common housing substrate. The housing substrate can, for example, be a laminate substrate. Fig. 28 to Fig. Figure 32 are schematic block diagrams of the depicted enclosed modules according to specific embodiments. Any suitable combination of features of these modules can be implemented together. While in the enclosed modules of the Fig. 29 to Fig. As illustrated in Figure 32, any other suitable multiplexer comprising a plurality of filters coupled to a common node can be implemented instead of one or more duplexers. For example, a quadplexer can be used in certain applications. Alternatively or additionally, one or more filters of an enclosed module can be implemented as transmit or receive filters, which are not contained within a multiplexer.

[0107] Fig. Figure 28 is a schematic block diagram of a high-frequency module 340, which includes an acoustic wave component 342 according to one embodiment. The high-frequency module 340 shown comprises the acoustic wave component 342 and other circuits 343. The acoustic wave component 342 can include one or more BAW resonators with an enhanced frame structure of multiple transconductance levels according to any of the suitable principles and advantages disclosed herein. The acoustic wave component 342 can include a BAW chip comprising BAW resonators.

[0108] The in Fig. The acoustic wave component 342 shown in Figure 28 comprises a filter 344 and terminals 345A and 345B. The filter 344 comprises one or more BAW resonators configured according to any of the suitable principles and advantages disclosed herein. The terminals 345A and 345B can, for example, serve as input and output contacts. The acoustic wave component 342 and the other circuits 343 are mounted on a common housing substrate 346 in Fig. 28. The housing substrate 346 can be a laminate substrate. The terminals 345A and 345B can be electrically connected to contacts 347A and 347B, respectively, on the housing substrate 346 via electrical connections 348A and 348B. The electrical connections 348A and 348B can be, for example, bumps or wire connections.

[0109] The other circuits 343 may include any suitable additional circuitry. For example, the other circuits 343 may include one or more high-frequency filters (e.g., one or more power amplifiers and / or one or more low-noise amplifiers), one or more power amplifiers, one or more high-frequency switches, one or more additional filters, one or more low-noise amplifiers, one or more high-frequency couplers, one or more delay lines, one or more phase shifters, and the like, or any suitable combination thereof. The other circuits 343 may be electrically coupled to the filter 344. The high-frequency module 340 may also include one or more housing structures to provide, for example, protection or to facilitate easier handling of the high-frequency module 340. Such a housing structure may include a potting compound formed over the housing substrate 340.The potting compound can encapsulate some or all of the components of the 340 high-frequency module.

[0110] Fig. Figure 29 is a schematic block diagram of a module 350 comprising duplexers 351A to 351N and an antenna switch 352. One or more filters of the duplexers 351A to 351N can incorporate one or more BAW resonators with an enhanced frame structure of multiple transconductances according to any of the suitable principles and advantages disclosed herein. Any suitable number of duplexers 351A to 351N can be implemented. The antenna switch 352 can have a number of passes corresponding to the number of duplexers 351A to 351N. The antenna switch 352 can have one or more additional passes coupled to one or more filters outside the module 350 and / or to other circuitry. The antenna switch 352 can electrically couple a selected duplexer to an antenna terminal of the module 350.

[0111] Fig. Figure 30 is a schematic block diagram of a module 354 comprising a power amplifier 355, a high-frequency switch 356, and multiplexers 351A to 351N according to one or more embodiments. The power amplifier 355 can amplify a high-frequency signal. The high-frequency switch 356 can electrically couple an output of the power amplifier 355 to a selected transmit filter of the multiplexers 351A to 351N. One or more filters of the multiplexers 351A to 351N can comprise any suitable number of BAW resonators with an enhanced frame structure of multiple transconductances according to any of the suitable principles and advantages disclosed herein. Any suitable number of multiplexers 351A to 351N can be implemented.

[0112] Fig. Figure 31 is a schematic block diagram of a module 357 comprising multiplexers 351A' to 351N', a high-frequency switch 358, and a low-noise amplifier 359 according to one embodiment. One or more filters of the multiplexers 351A' to 351N' can comprise any suitable number of BAW resonators with an enhanced frame structure of multiple transconductances according to any of the suitable principles and advantages disclosed herein. Any suitable number of multiplexers 351A' to 351N' can be implemented. The high-frequency switch 358 can be a multi-pass high-frequency switch. The high-frequency switch 358 can electrically connect an output of a selected filter of the multiplexers 351A' to 351N' to the low-noise amplifier 359. In some embodiments (not shown), a plurality of low-noise amplifiers can be implemented. The module 357 can exhibit diversity receiving characteristics for certain applications.

[0113] Fig. Figure 32 is a schematic block diagram of a high-frequency module 380 with an acoustic wave filter according to one embodiment. As shown, the high-frequency module 380 comprises duplexers 382A to 382N, each having a transmit filter 383A1 to 383N1 and corresponding receive filter 383A2 to 383N2, a power amplifier 384, a selector switch 385, and an antenna switch 386. The high-frequency module 380 can have a housing that encloses the elements shown. The elements shown can be mounted on a common housing substrate 387. The housing substrate 387 can, for example, be a laminate substrate. A high-frequency module that includes a power amplifier can be called a power amplifier module. A high-frequency module can be a subset of in Fig. The 32 elements shown and / or additional elements may be incorporated. The high-frequency module 380 may include one or more BAW resonators with an enhanced frame structure of multiple degrees of steepness according to any of the suitable principles and advantages disclosed herein.

[0114] The duplexers 382A to 382N can each comprise two acoustic wave filters coupled to a common node. For example, the two acoustic wave filters can be a transmit filter and a receive filter. As shown, the transmit filter and the receive filter can each be a bandpass filter designed to filter a high-frequency signal. One or more transmit filters 383A1 to 383N1 can comprise one or more BAW resonators with an enhanced frame structure of multiple degrees of transconductance according to any of the suitable principles and advantages disclosed herein. Similarly, one or more of the receive filters 383A2 to 383N2 can comprise one or more BAW resonators with an enhanced frame structure of multiple degrees of transconductance according to any of the suitable principles and advantages disclosed herein. Fig. Since the 32 Duplexer is represented, all suitable principles and advantages disclosed herein can be used in other multiplexers (e.g. quadplexer, hexaplexer, octoplexer etc.) and / or in switched multiplexers.

[0115] The power amplifier 384 can amplify a high-frequency signal. The switch 385 shown is a multi-pass high-frequency switch. The switch 385 can electrically couple an output of the power amplifier 384 to a selected transmit filter from 383A1 to 383N1. In some cases, the switch 385 can electrically couple the output of the power amplifier 384 to more than one of the transmit filters 383A1 to 383N1. The antenna switch 386 can selectively couple a signal from one of the duplexers 382A to 382N to an antenna connection ANT. The duplexers 382A to 382N can be assigned to different frequency bands and / or different operating states (e.g., different energy modes, different signal processing modes, etc.).

[0116] BAW devices with an enhanced frame structure of multiple degrees of steepness, as disclosed herein, can be used in a variety of wireless communication devices, such as mobile devices. One or more filters with any suitable number of BAW devices designed in accordance with any of the principles and advantages disclosed herein can be used in a variety of wireless communication devices, such as mobile devices. The BAW devices can be incorporated into a filter of a radio frequency front end. Fig. Figure 33 shows a schematic block diagram of an embodiment of a mobile device 390. The mobile device 390 comprises a baseband system 391, a transceiver 392, a front-end system 393, antennas 394, a power control system 395, a memory 396, a user interface 397 and a battery 398.

[0117] The Mobile Device 390 can be used to communicate using a wide variety of communication technologies, which, without restriction to the general public, may include 2G, 3G, 4G (including LTE, LTE-Advanced, and LTE-Advanced Pro), 5G (New Radio, NR), wireless local area network (WLAN, e.g. WiFi), wireless personal network (WPAN, e.g. Bluetooth and ZigBee), WMAN (wireless wide area network, e.g. WiMax), and / or GPS technologies, or any suitable combination thereof.

[0118] The transceiver 392 generates RF signals for transmission and processes incoming RF signals received by the antennas 394. It should be clear that various functionalities related to transmitting and receiving RF signals can be achieved by one or more components, which together form a Fig. 33 are designated as the transceiver 392. In one example, separate components (e.g., separate circuits or chips) can be provided to process specific types of RF signals.

[0119] The front-end system 393 assists in the processing of signals transmitted to and / or received by the antennas 394. In the illustrated embodiment, the front-end system 393 comprises antenna tuning circuits 400, power amplifiers (PAs) 401, low-noise amplifiers (LNAs) 402, filters 403, switches 404, and signal divider / combiner circuits 405. However, other implementations are also possible. One or more filters 403 can be designed in accordance with any suitable principles and advantages disclosed herein. For example, one or more filters 403 can include at least one BAW resonator with an enhanced frame structure of multiple transconductance levels in accordance with any suitable principles and advantages disclosed herein.

[0120] For example, the 393 frontend system can provide a number of functionalities, including, without limitation of generality, amplifying signals for transmission, amplifying received signals, filtering signals, switching between different bands, switching between different transmission and reception modes, duplexing signals, multiplexing signals (e.g., diplexing or triplexing), or any combination thereof.

[0121] In certain implementations, the Mobile Device 390 supports carrier bonding, providing flexibility to increase peak data rates. Carrier bonding can be used for both frequency division duplexing (FDD) and time division duplexing (TDD) and can be employed to bundle multiple carriers or channels. Carrier bonding includes contiguous bonding, where adjacent carriers within the same operating frequency band are bundled. Carrier bonding can also be non-contiguous and can include carriers that are frequency-separated within a common band or in different bands.

[0122] The antennas 394 can include antennas used for a wide variety of different types of communication. For example, the antennas 394 can include antennas for transmitting and / or receiving signals associated with a wide variety of different frequencies and communication standards.

[0123] In certain implementations, the antennas support 394 MIMO communication and / or switched diversity communication. For example, MIMO communication uses multiple antennas to transmit multiple data streams over a single radio frequency channel. MIMO communication benefits from a better signal-to-noise ratio, improved coding, and / or reduced signal interference due to spatial multiplexing differences in the radio environment. Switched diversity refers to communication where a specific antenna is selected for operation at specific times. For example, a switch can be used to select a particular antenna from a group of antennas based on a variety of factors, such as an observed bit error rate and / or a signal strength indicator.

[0124] The mobile device 390 can be operated with beamforming in certain implementations. For example, the front-end system 393 can include amplifiers with controllable gain and phase shifters with controllable phase to provide beamforming and directional characteristics for transmitting and / or receiving signals using the antennas 394. For example, in the context of signal transmission, the amplitudes and phases of the transmitted signals provided to the antennas 394 can be controlled such that the signals emitted by the antennas 394 are combined under constructive and destructive interference to obtain a focused transmitted signal with beam-like characteristics, which exhibits a higher signal strength in a predetermined direction of propagation.In the context of signal reception, the phases can be controlled so that more signal energy is received when the signal arrives at the antennas 394 from a particular direction. In certain implementations, the antennas 394 have one or more arrays of antenna elements to amplify the beamforming.

[0125] The baseband system 391 is coupled with the user interface 397 to process various user inputs and outputs (I / O), such as voice and data signals. The baseband system 391 provides the transceiver 392 with digital representations of the transmission signals, which the transceiver 392 processes to generate RF signals for transmission. The baseband system 391 also processes digital representations of received signals supplied by the transceiver 392. As described in Fig. As shown in Figure 33, the baseband system 391 is coupled with the memory 396 to enable operation of the mobile device 390.

[0126] The memory 396 can be used for a wide variety of purposes, such as storing data and / or instructions to enable the operation of the mobile device 390 and / or providing storage for user information.

[0127] The power control system 395 provides a number of power control functions for the mobile device 390. In certain implementations, the power control system 395 includes a power amplifier supply control circuit that controls the supply voltages of the power amplifiers 401. For example, the power control system 395 may be designed to modify the supply voltage(s) provided to one or more of the power amplifiers 401 to improve their efficiency, such as power added efficiency (PAE).

[0128] As in Fig. Figure 33 shows that the power control system 395 receives a battery voltage from the battery 398. The battery 398 can be any suitable battery for use in the mobile device 390, including, for example, a lithium-ion battery.

[0129] The technology revealed herein can be implemented in acoustic wave filters for 5G applications. 5G technology is also referred to here as 5G New Radio (NR). 5G NR supports, or plans to support, a variety of features, such as millimeter-wave spectrum communication, beamformability, high spectral efficiency waveforms, low-latency communication, multiple radio numerology, and / or non-orthogonal multiple access (NOMA). While such RF functionalities offer network flexibility and increase user data rates, supporting such features can present a number of technical challenges.

[0130] The teachings contained herein apply to a wide variety of communication systems, including, but not limited to, communication systems using advanced mobile communication technologies such as LTE-Advanced, LTE-Advanced Pro, and / or 5G NR. An acoustic wave device with any suitable combination of features disclosed herein can be incorporated into a filter designed to filter a radio frequency signal in a 5G NR operating band within frequency range 1 (FR1). A filter designed to filter a radio frequency signal in a 5G NR operating band may include one or more BAW devices disclosed herein. FR1 may, for example, range from 410 MHz to 7.125 GHz, as defined in a current 5G NR specification.One or more BAW devices in accordance with any suitable principle and advantage disclosed herein may be incorporated into a filter designed to filter a radio frequency signal in a fourth-generation (4G, Long Term Evolution, LTE) band. One or more BAW devices in accordance with any suitable principle and advantage disclosed herein may be incorporated into a filter having a passband that includes a 4G LTE operating band and a 5G NR operating band. Such a filter may be used in a dual-connectivity application, such as an E-UTRAN new radio dual-connectivity (ENDC) application.

[0131] The BAW devices disclosed herein may exhibit high Q and / or high Q stability against manufacturing variations. Such properties may be advantageous in 5G NR applications. For example, the Q stability of BAW devices may be essential for achieving 5G performance specifications at the filter and / or system level.

[0132] Fig. Figure 34 shows a schematic diagram of an example of a communication network 410. The communication network 410 includes a macrocell base station 411, a small cell base station 413, and various examples of user equipment (UE), including a first mobile device 412a, a wirelessly connected car 412b, a laptop 412c, a stationary wireless device 412d, a wirelessly connected train 412e, a second mobile device 412f, and a third mobile device 412g. UEs are wireless communication devices. The in Fig. The macrocell base station 411 shown in Figure 34, the small cell base station 413, or the UEs may incorporate one or more of the acoustic wave filters designed in accordance with any suitable principles and advantages disclosed herein. For example, one or more of the filters shown in Figure 34 may incorporate one or more of the acoustic wave filters designed in accordance with any suitable principles and advantages disclosed herein. Fig. 34 UEs shown feature one or more acoustic wave filters comprising any suitable number of BAW resonators with an elevated frame structure of multiple degrees of steepness.

[0133] Although in Fig. As 34 specific examples of base stations and user equipment are shown, a communications network can include base stations and user equipment / terminals of varying types and / or numbers. In the example shown, for instance, communications network 410 includes the macrocell base station 411 and the smallcell base station 413. The smallcell base station 413 can operate with relatively lower power, shorter range, and / or fewer concurrent users compared to the macrocell base station 411. The smallcell base station 413 can also be referred to as a femtocell, picocell, or microcell. Although communications network 410 is shown to include two base stations, it can be implemented to include more or fewer base stations and / or base stations of other types.

[0134] Although various examples of user devices are shown, the teachings contained herein are applicable to a wide variety of user devices, including, but not limited to, mobile phones, tablets, laptops, IoT devices, wearables, customer premises equipment (CPE), wirelessly connected vehicles, wireless playback devices, and / or a variety of other communication devices. Furthermore, the user device encompasses not only currently available communication devices operating in a mobile network, but also communication devices developed later that are readily implementable with the inventive systems, processes, procedures, methods, and devices described and claimed herein.

[0135] The depicted communication network 410 of Fig. 34 supports communication using a variety of cellular technologies, including 4G LTE and 5G NR. In certain implementations, the Communications Network 410 is further adapted to provide a wireless local area network (WLAN), such as WiFi. Although various communication technology examples have been given, the Communications Network 410 can be adapted to support a wide variety of communication technologies.

[0136] In Fig. Figure 34 shows various communication links of the communication network 10. These links can be duplexed in various ways, for example, by frequency division multiplexing (FDD) and / or time-division multiplexing (TDD). FDD is a type of high-frequency communication that uses different frequencies for transmitting and receiving signals. FDD can offer several advantages, such as high data rates and low latency. In contrast, TDD is a type of high-frequency communication that uses approximately the same frequency for transmitting and receiving signals, but in this case, transmitting and receiving are time-shifted. TDD can offer several advantages, such as efficient spectrum utilization and variable throughput allocation between transmitting and receiving.

[0137] In certain implementations, user facilities can communicate with a base station using one or more of the following technologies: 4G LTE, 5G NR, and WiFi. In certain implementations, Enhanced License Assisted Access (eLAA) is used to combine one or more licensed frequency carriers (e.g., licensed 4G LTE and / or 5G NR frequencies) with one or more unlicensed carriers (e.g., unlicensed WiFi frequencies).

[0138] As in Fig. As shown in Figure 34, the communication links include not only communication links between UEs and base stations, but also UE-to-UE communications and base station-to-base station communications. For example, the communication network 10 can be implemented to support self-fronthaul and / or self-backhaul (e.g., between mobile device 412g and mobile device 412f).

[0139] The communication links can operate over a variety of frequencies. In certain implementations, communication using 5G NR technology is supported over one or more frequency bands below 6 gigahertz (GHz) and / or over one or more frequency bands above 6 GHz. Thus, in certain configurations, the communication links can operate in frequency range 1 (FR1), frequency range 2 (FR2), or a combination thereof. An acoustic wave filter designed in accordance with any suitable principles and benefits disclosed herein can filter a high-frequency signal within FR1. In one embodiment, one or more of the mobile devices support an HPUE performance class specification.

[0140] In certain implementations, a base station and / or a user device communicate using beamforming. Beamforming can be used, for example, to focus the signal strength to overcome path losses, such as the high losses encountered when communicating over high signal frequencies. In certain embodiments, user devices, such as one or more mobile phones, communicate using beamforming on millimeter wave frequency bands in the range of 30 GHz to 300 GHz and / or upper centimeter wave frequencies in the range of 6 GHz to 30 GHz, particularly 24 GHz to 30 GHz.

[0141] Different users of the 410 communication network can share available network resources, such as the available frequency spectrum, in a variety of ways. One example is Frequency Division Multiple Access (FDMA), which is used to divide a frequency band into multiple carriers. Additionally, one or more carriers are assigned to a specific user. Examples of FDMA include Single Carrier FDMA (SC-FDMA) and Orthogonal FDMA (OFDMA). OFDMA is a multi-carrier technology that divides the available bandwidth into several mutually orthogonal narrowband subcarriers, which can be assigned separately to different users.

[0142] Other examples of shared access include, but are not limited to, time-division multiple access (TDMA), where a user is allocated specific time slots to use a frequency resource; code-division multiple access (CDMA), where a frequency resource is shared by multiple users by assigning each user a unique code; space-division multiple access (SDMA), where beamforming is used to provide shared access through spatial division; and non-orthogonal multiple access (NOMA), where the power domain is used for multiple access. For example, NOMA can be used to serve multiple users with the same frequency, time, and / or code, but with different power levels.

[0143] Enhanced Mobile Broadband (eMBB) refers to a technology for increasing the system capacity of LTE networks. For example, eMBB can refer to communications with a maximum data rate of at least 10 Gbps and a minimum of 100 Mbps for each user. Highly Reliable Low Latency Communication (uRLLC) refers to technologies for communication with very low latency, e.g., less than 3 milliseconds. uRLLC can be used for mission-critical communications, such as for autonomous driving and / or remote surgery applications. Massive Machine Communication (mMTC) refers to cost-effective, low-data-rate communications associated with wireless connections to everyday objects, such as those used in Internet of Things (IoT) applications.

[0144] The 410 communication network of the Fig.34 can be used to support a variety of advanced communication functions, including but not limited to eMBB, uRLLC and / or mMTC.

[0145] Each of the embodiments described above can be implemented in conjunction with mobile devices such as mobile phones. The principles and advantages of the embodiments can be applied to any system or device, such as any cellular uplink device, that could benefit from any of the embodiments described herein. The teachings presented here apply to a wide variety of systems. Although this disclosure includes some exemplary embodiments, the teachings described herein can be applied to a wide variety of structures.Each of the principles and advantages described here can be implemented in conjunction with RF circuits configured to process signals with a frequency in a range of approximately 30 kHz to 300 GHz, such as a frequency in a range of approximately 450 MHz to 5 GHz, in a range of approximately 450 MHz to 8.5 GHz, or in a range of approximately 450 MHz to 10 GHz.

[0146] Aspects of this disclosure can be implemented in various electronic devices. Examples of such electronic devices include, but are not limited to, consumer electronics products, components of consumer electronics products such as packaged radio frequency modules, wireless uplink communication devices, wireless communication infrastructure, electronic test equipment, etc.Examples of electronic devices include, but are not limited to, a mobile phone such as a smartphone, a portable computing device such as a smartwatch or earpiece, a telephone, a television, a computer monitor, a computer, a modem, a handheld computer, a laptop, a tablet computer, a microwave oven, a refrigerator, a vehicle-integrated electronic system such as an automotive electronics system, a stereo system, a digital music player, a radio, a camera such as a digital camera, a portable memory chip, a washing machine, a dryer, a washer / dryer, a copier, a fax machine, a scanner, a multifunctional peripheral device, a wristwatch, a clock, etc. Furthermore, electronic devices may also include unfinished products.

[0147] Unless the context clearly requires otherwise, the words "encompass," "comprehensive," "include," "containing," and the like are to be interpreted in an inclusive sense, as opposed to an exclusive or exhaustive one; that is, in the sense of "inclusive" but not limited to. The word "coupled," as used generally here, refers to two or more elements, which may be directly connected to one another or connected by one or more intermediate elements. Likewise, the word "connected," as used generally here, refers to two or more elements, which may be directly connected or connected by one or more intermediate elements. Furthermore, the words "here," "above," "below," and words of similar meaning, when used in this description, refer to this description as a whole and not to any particular part of it.Where the context allows, words in the detailed description above that are singular or plural may also include the plural or singular form.

[0148] Although certain embodiments have been described, these embodiments are presented only as examples and are not intended to limit the scope of the disclosure. In fact, the novel resonators described herein can be implemented in a multitude of other forms. Furthermore, various omissions, substitutions, and modifications to the form of the resonators described herein can be made without deviating from the fundamental concept of the disclosure. Any suitable combination of the elements and actions of the various embodiments described above can be combined to form further embodiments. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] US 63 / 080530

[0001]

Claims

[1] An acoustic volume wave device (10; 20A; 20B; 30; 50; 60; 70; 80; 90; 100; 110; 120; 130; 140; 150; 160; 170; 180; 190; 200; 210), designed to generate an acoustic volume wave, with an elevated frame of multiple degrees of steepness, comprising: a first electrode (12); a second electrode (14); a piezoelectric layer (11) which is arranged between the first electrode (12) and the second electrode (14); and an increased frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) designed to reduce lateral energy outflows from an acoustically active main region (21; MAIN REGION) of the acoustic volume wave device, which is tapered on opposite sides. [2] The acoustic volume wave device according to claim 1, wherein the raised frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) encloses the acoustically active main region (21; MAIN REGION) of the acoustic volume wave device in top view. [3] The acoustic volume wave device according to claim 1 or 2, wherein the raised frame structure of multiple degrees of steepness has a region without inclination (RaF2) between two regions with inclination (RaF1; RaF3). [4] The acoustic volume wave device according to claim 1 or 2, wherein the raised frame structure of multiple degrees of steepness consists essentially of inclined regions (RaFl; RaF3). [5] The acoustic volume wave device according to any one of claims 1 to 4, wherein the acoustic volume wave device is an acoustic thin-film volume resonator (10; 20A; 20B; 30; 50; 70; 80; 90; 100; 110; 120; 130; 140; 150; 160; 170; 180; 190; 200; 210). [6] The acoustic volume wave device according to one of claims 1 to 5, wherein the raised frame structure of multiple degrees of steepness comprises a plurality of raised frame layers (15; 16). [7] The acoustic volume wave device according to claim 6, wherein the plurality of raised frame layers comprise a first raised frame layer (15) and a second raised frame layer (16), and the second raised frame layer (16) extends beyond the first raised frame layer (15) on the opposite sides. [8] The acoustic volume wave device according to claim 7, wherein the first raised frame layer (15) has a lower acoustic impedance than the piezoelectric layer (11) and / or the second raised frame layer (16). [9] The acoustic volume wave device according to claim 7 or 8, wherein the first raised frame layer (15) is an oxide layer and the second raised frame layer (16) is metallic. [10] The acoustic volume wave device according to claim 7 or 8, wherein the first raised frame layer (15) is a silicon dioxide layer and the second raised frame layer (16) is metallic. [11] The acoustic volume wave device according to one of claims 7 to 9, wherein the first raised frame layer (15) is arranged between the first and the second electrode (12; 14). [12] The acoustic volume wave device according to claim 11, wherein the second electrode (14) is arranged between the first and the second raised frame layer (15; 16). [13] The acoustic volume wave device according to one of claims 7 to 12, wherein the second raised frame layer (16) has a first taper angle on a first side and a second taper angle on a second side, and the first and second taper angles are in a range between 5° and 45°. [14] The acoustic volume wave device according to any one of claims 1 to 13, wherein the raised frame structure of multiple degrees of steepness is a convex structure with respect to the piezoelectric layer (11). [15] An acoustic wave filter (240; 250; 260; 330; 334; 383; 403) with an acoustic volume wave device having an increased frame of multiple degrees of steepness, comprising: an acoustic volume wave device comprising a first electrode (12), a second electrode (14), a piezoelectric layer (11) arranged between the first electrode (12) and the second electrode (14), and an elevated frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) designed to reduce lateral energy outflows from an acoustically active main region (21; MAIN REGION) of the acoustic volume wave device, and tapered on opposite sides; and at least one additional acoustic volume wave device, which together with the acoustic volume wave device is designed to filter a high frequency signal (RF_IN). [16] The acoustic wave filter (240; 250; 260; 330; 334; 383; 403) according to claim 15, wherein the at least one additional acoustic volume wave device comprises a second acoustic volume wave device which has a second raised frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) which is tapered on opposite sides. [17] The acoustic wave filter (240; 250; 260; 330; 334; 383; 403) according to claim 15 or 16, wherein the raised frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) comprises a first raised frame layer (15) and a second raised frame layer (16), the first raised frame layer (15) comprising an oxide, the second raised frame layer (16) being metallic, and the second raised frame layer (16) extending beyond the first raised frame layer (15) on opposite sides. [18] A wireless communication device (390; 412a; 412b; 412c; 412d; 412e; 412f) comprising: an acoustic wave filter (240; 250; 260; 330; 334; 383; 403) with an acoustic volume wave device comprising a first electrode (12), a second electrode (14), a piezoelectric layer (11) arranged between the first electrode and the second electrode, and an elevated frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) designed to reduce lateral energy outflows from an acoustically active main region (21; MAIN REGION) of the acoustic volume wave device and tapered on opposite sides; and an antenna (394) that is operatively connected to the acoustic wave filter. [19] The wireless communication device (390; 412a; 412b; 412c; 412d; 412e; 412f) according to claim 18, wherein the wireless communication device is a mobile phone. [20] The wireless communication device (390; 412a; 412b; 412c; 412d; 412e; 412f) according to claim 18 or 19, wherein the acoustic wave filter is included in a multiplexer. [21] An acoustic volume wave device with an elevated frame of multiple degrees of steepness, designed to generate an acoustic volume wave, and comprising: a first electrode (12); a second electrode (14); a piezoelectric layer (11) which is arranged between the first electrode (12) and the second electrode (14); and an elevated frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) with a first elevated frame layer (15) and a second elevated frame layer (16) which extends beyond the first elevated frame layer (15) and tapers on opposite sides. [22] The acoustic volume wave device according to claim 21, wherein the second raised frame layer (16) extends beyond the first raised frame layer (15) on the opposite sides, comprising a first side oriented towards the acoustically active main region (21; MAIN REGION) of the acoustic volume wave device and a second side oriented away from the acoustically active main region (21; MAIN REGION). [23] The acoustic volume wave device according to claim 21 or 22, wherein the first raised frame layer (15) has a lower acoustic impedance than the piezoelectric layer (11). [24] The acoustic volume wave device according to one of claims 21 to 23, wherein the first raised frame layer (15) has an oxide layer and the second raised frame layer (16) has a metal. [25] The acoustic volume wave device according to claim 24, wherein the second raised frame layer (16) comprises ruthenium, molybdenum, tungsten, platinum and / or iridium. [26] The acoustic volume wave device according to one of claims 21 to 23, wherein the first raised frame layer (15) comprises a metal. [27] The acoustic volume wave device according to one of claims 21 to 23, wherein the first raised frame layer (15) comprises a polymer. [28] The acoustic volume wave device according to one of claims 21 to 27, wherein the raised frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) has a region without inclination (RaF2) between two regions with inclination (RaF1; RaF3). [29] The acoustic volume wave device according to one of claims 21 to 28, wherein the first raised frame layer (15) is arranged between the first electrode (12) and the second electrode (14). [30] The acoustic volume wave device according to one of claims 21 to 28, wherein the second electrode (14) is arranged between the second raised frame layer (16) and the first raised frame layer (15). [31] The acoustic volume wave device according to claim 30, wherein the first raised frame layer (15) is arranged between the piezoelectric layer (11) and the second electrode (14). [32] The acoustic volume wave device according to one of claims 21 to 31, wherein the second raised frame layer (16) has a first taper angle on a first side and a second taper angle on a second side, and the first and second taper angles are each greater than 5° and less than 45°. [33] The acoustic volume wave device according to one of claims 21 to 32, wherein the second raised frame layer (16) is a convex structure with respect to the piezoelectric layer (11). [34] The acoustic volume wave device according to one of claims 21 to 33, wherein the raised frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) encloses an acoustically active main region (21; MAIN REGION) of the acoustic volume wave device in top view. [35] The acoustic volume wave device according to any one of claims 21 to 34, wherein acoustic volume wave device is an acoustic thin-film volume resonator (60). [36] An acoustic volume wave filter (240; 250; 260; 330; 334; 383; 403) comprising: an acoustic volume wave device comprising a first electrode (12), a second electrode (14), a piezoelectric layer (11) arranged between the first electrode (12) and the second electrode (14), and a raised frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) with a first raised frame layer (15) and a second raised frame layer (16) extending beyond the first raised frame layer (15) on opposite sides and tapering on opposite sides; and at least one additional acoustic volume wave device, which together are designed to filter a high-frequency signal (RF_IN). [37] The acoustic volume wave device according to claim 36, wherein the at least one additional acoustic volume wave device comprises a second acoustic volume wave device having a second raised frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) which is tapered on opposite sides. [38] A housed high-frequency module (340; 350; 354; 357; 380) comprising: an acoustic wave filter with an acoustic volume wave device designed for filtering a high-frequency signal (RF_IN), comprising a first electrode (12), a second electrode (14), a piezoelectric layer (11) arranged between the first electrode (12) and the second electrode (14), and a raised frame structure of multiple degrees of steepness (RaF1; RaF2; RaF3) with a first raised frame layer (15) and a second raised frame layer (16) extending beyond the first raised frame layer (15) on opposite sides and tapering on opposite sides; a high-frequency circuit element (343; 352; 355; 356; 358; 359; 386; 401; 402 404); and a housing structure (346; 387) that encloses the acoustic wave filter and the high-frequency circuit element (343; 352; 355; 356; 358; 359; 386; 401; 402 404). [39] The enclosed high-frequency module (340; 350; 354; 357; 380) according to claim 38, wherein the high-frequency switching element is a high-frequency switch (352; 356; 358; 386; 404). [40] The enclosed high-frequency module (340; 350; 354; 357; 380) according to claim 38, wherein the high-frequency switching element is a high-frequency switching amplifier (355; 359; 384; 401; 402).

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