Semiconductor device and method for manufacturing a semiconductor device

Abstract

Semiconductor device (100, 200, 300, 400, 500, 600), comprising: a semiconductor chip (20); a frame (30); a projection (32, 32a, 32b, 432, 532, 632) extending from the frame (30); a conductor (40) in which a sub-region (44, 244, 544, 644) is formed for inserting a projection into which the projection (32, 32a, 32b, 432, 532, 632) is to be inserted and which directly contacts the frame (30) to electrically connect the semiconductor chip (20) to the frame (30); and a first bonding material (16) configured to bond the projection (32, 32a, 32b, 432, 532, 632) to the conductor (40), wherein the first bonding material (16) is arranged between a lateral surface of the conductor (40) forming the sub-area (44, 244, 544, 644) for inserting a projection and the projection (32, 32a, 32b, 432, 532, 632).

Description

Background of the invention: Area

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device. background

[0002] JP 2018-152468 A discloses a semiconductor device comprising a die pad sub-area with a chip mounting surface and a conductor sub-area spaced apart from the die pad sub-area. A first electrode of a chip is bonded to the chip mounting surface by a first conductive bonding material. A connector has one end bonded to a second electrode of the chip by a second conductive bonding material and the other end bonded to the conductor sub-area by a third conductive bonding material. The conductor sub-area has a protrusion or projection extending in a thickness direction and having a cross-sectional area decreasing towards its tip. The connector has a through-hole formed in its other end. The through-hole engages with the protrusion at a predetermined height position of the protrusion.

[0003] In JP 2018-152468 A, the projection of the conductor section contacts the interior of the through-hole formed in the connector. Accordingly, for example, if the diameter of the through-hole is small, if the diameter of the projection is large, if the connector is mounted at an angle relative to the conductor section, or if the amount of bonding material is small, the space between the connector and the conductor section may not be sufficiently filled with bonding material, making it impossible to achieve adequate bond strength. Summary

[0004] The present disclosure was made to solve the problems described above, and its purpose is to provide a semiconductor device capable of stably bonding a conductor electrically connecting a semiconductor chip to a frame, and a method for manufacturing the semiconductor device.

[0005] The features and advantages of the present disclosure can be summarized as follows.

[0006] According to one aspect of the first disclosure, a semiconductor device comprises a semiconductor chip, a frame, a projection extending from the frame, a contact or conductor in which a portion is formed for inserting a projection into which the projection is to be inserted and which directly contacts the frame to electrically connect the semiconductor chip to the frame, and a first bonding material configured to bond the projection to the conductor.

[0007] According to one aspect of the second disclosure, a semiconductor device comprises a semiconductor chip, a housing configured to receive the semiconductor chip, a frame, and a conductor that is to be bonded by a bonding material to an obverse surface of the frame in order to electrically connect the semiconductor chip to the frame, wherein the housing has a projection extending from the obverse surface and the projection is located on a periphery of a bonding sub-region between the obverse surface and the conductor.

[0008] According to one aspect of the third disclosure, a method for manufacturing a semiconductor device comprises electrically connecting a semiconductor chip to a conductor and inserting a projection extending from a frame into a sub-region formed in the conductor for inserting a projection and bonding the projection to the conductor in a state in which the frame and the conductor are directly touching each other in order to be electrically connected.

[0009] According to one aspect of the fourth disclosure, a method for manufacturing a semiconductor device comprises insert-molding a frame with a housing configured to receive a semiconductor chip to form a protrusion extending from a front surface of the frame in the housing, and bonding a conductor through a bonding material to the front surface to electrically connect the semiconductor chip to the frame through the conductor, the protrusion being located on a periphery of a bonding sub-region between the front surface and the conductor.

[0010] Other and further tasks, features and benefits of the revelation will become more fully apparent from the following description. List of characters Fig. Figure 1 is a perspective view of a semiconductor device according to a first embodiment. Fig. 2 is a cut along a line AA in Fig. 1. Obtained cross-sectional view. Fig. Figure 3 is a perspective view of a semiconductor device according to a second embodiment. Fig. Figure 4 is a perspective view of a semiconductor device according to a third embodiment. Fig. Figure 5 is a perspective view of a semiconductor device according to a fifth embodiment. Fig. 6 is a cut along a line AA in Fig. 5. Cross-sectional view obtained. Fig. Figure 7 is a perspective view illustrating an overall configuration of the semiconductor device according to the fifth embodiment. Fig. Figure 8 is a perspective view of a semiconductor device according to a sixth embodiment. Fig. Figure 9 is a perspective view of a semiconductor device according to a seventh embodiment. Fig. Figure 10 is a diagram illustrating a condition in which the lead is inclined. Fig. Figure 11 is a perspective view of a semiconductor device according to an eighth embodiment. Fig. 12 is a result of cutting along a line AA in Fig. 11. Cross-sectional view obtained. Description of embodiments

[0011] Semiconductor devices and methods for manufacturing the semiconductor devices according to embodiments of the present disclosure are described with reference to the accompanying drawings. Identical or corresponding components are designated by the same reference numerals, and their repeated description is avoided in some cases. First embodiment

[0012] Fig. Figure 1 is a perspective view of a semiconductor device 100 according to a first embodiment. Fig. 2 is a cut along a line AA in Fig. 1. Cross-sectional view obtained. In the semiconductor device 100, a semiconductor chip 20 is bonded to an upper surface of a circuit structure 10 by a bonding material 12. A conductor 40 is bonded to an upper surface of the semiconductor chip 20 by a bonding material 14.

[0013] The conductor 40 electrically connects the semiconductor chip 20 to a frame 30. A projection 32 protrudes from a front surface of the frame 30. A recess 44 for inserting the projection, into which the projection 32 is to be inserted, is formed in the conductor 40. In this embodiment, the recess 44 for inserting a projection is a through-hole extending from a top surface to a rear surface of the conductor 40. The conductor 40 directly contacts the frame 30. Specifically, the front surface of the frame 30 and the rear surface of the conductor 40 are in surface contact with each other. A bonding material 16 is used to bond the projection 32 to the conductor 40. The bonding material 16 is located between a side surface of the conductor 40, which forms the recess 44 for inserting a projection, and the projection 32.

[0014] The semiconductor chip 20, for example, is a power semiconductor chip. It is preferable that the circuit structure 10, the frame 30, and the conductor 40 are formed, for example, from a metal such as Al, Cu, or Au. An opening 42, through which the bonding material 14 is to be exposed, can be formed in the conductor 40. The opening 42 is provided for injecting the bonding material 14. The diameter of the section 44 for inserting a projection of the conductor 40 is larger than the diameter of the projection 32. The projection 32 is attached to the frame 30. The projection 32 can be part of the frame 30.

[0015] Each of the bonding materials 12 and 14 is a conductive bonding material, such as a solder metal. The bonding material 16 can be a solder metal or a non-conductive bonding material, such as silicone rubber. The bonding material 16 can contact the frame 30.

[0016] A method for manufacturing the semiconductor device 100 according to the present embodiment is described. The method for manufacturing the semiconductor device 100 comprises the following first to third steps. The first step is carried out before the second and third steps are carried out. The second and third steps can be carried out simultaneously.

[0017] The first step involves preparing the semiconductor chip 20, the frame 30, and the conductor 40. The frame 30 is positioned spaced apart from the semiconductor chip 20, and the projection 32 extends from the front surface of the frame 30 in the thickness direction. The conductor 40 has a plate shape, and an opening is formed in one or each end of the conductor 40.

[0018] In the second step, the semiconductor chip 20 and the conductor 40 are electrically connected. Specifically, the conductor 40 is bonded to the semiconductor chip 20 by the bonding material 14. The bonding material 14 is melted by heating the entire semiconductor device 100, by heating the conductor 40 and the semiconductor chip 20, or by applying laser light to the bonding material 14. This allows the conductor 40 to be bonded to the semiconductor chip 20.

[0019] In the third step, the projection 32 is inserted into the recess 44 formed in the conductor 40, and the projection 32 and the conductor 40 are bonded together by the bonding material 16 in a state where the frame 30 and the conductor 40 are in direct contact to form an electrical connection. The bonding material 16 is melted by heating the entire semiconductor device 100, by heating the conductor 40 and the frame 30, or by applying laser light to the bonding material 16. This allows the conductor 40 to be bonded to the projection 32. If the bonding material 16 is non-conductive, it is cured by heating so that the conductor 40 and the projection 32 are bonded together.

[0020] Next, the effect of the present embodiment will be described. In the present embodiment, the projection 32 is inserted into the sub-area 44 for the insertion of a projection of the line 40, thereby preventing the position of the line 40 from being displaced.

[0021] As a comparative example with respect to the present embodiment, a configuration is described in which the front surface of the frame 30 and the rear surface of the conduit 40 are bonded together, for example, by a bonding material. This configuration may make it impossible to adequately fill the space between the conduit 40 and the frame 30 with the bonding material if the conduit 40 is inclined or if the amount of bonding material is small. This can lead to a risk that sufficient bond strength cannot be achieved. Therefore, it is assumed that a variation in the component or assembly will result in significant changes in the product's service life and resistance to temperature cycles. This can complicate component management and production.

[0022] In contrast, in the present embodiment, the projection 32 and the line 40 can be bonded together in the state where the frame 30 and the line 40 are in direct contact. Accordingly, the line 40 and the projection 32 can be stably bonded together. This enables stable bonding even in the presence of component or assembly variations, thereby stabilizing the product's service life and resistance to temperature cycles. Consequently, bonding reliability can be improved. Furthermore, component and production management can be simplified. In this way, the present embodiment allows for the stable production of a product capable of maintaining sufficient bond strength between the line 40 and the projection 32 while preventing displacement of the line 40.

[0023] In particular, when the bonding material 16 is melted with the laser light, the amount of laser light is high, and the resulting thermal energy of the laser light can cause the frame 30 or the bonding material 16 to expand. Furthermore, when bonding material 16 is melted for use in bonding, the frame 30 may not be horizontal. Even in such a case, in the present embodiment, the frame 30 and the conductor 40 are in contact with each other, thus enabling the projection 32 and the conductor 40 to be bonded securely together. Accordingly, a wide control range of the laser light can be ensured. In addition, wide control ranges of the frame shape and temperature can be guaranteed. Therefore, production can be easily accomplished.In the present embodiment, the conductor 40 and the projection 32 are bonded together, thereby limiting the bonding area. Accordingly, the assembly density can be increased.

[0024] In the present embodiment, the front surface of the frame 30 and the rear surface of the conductor 40 are in surface contact with each other. This ensures a large contact area, which reduces contact resistance. Accordingly, the bonding material 16 can be non-conductive. If, for example, a solder metal is used as the bonding material 16, cracks readily form in the solder metal due to stress resulting from repeated temperature changes. In contrast, if silicone rubber is used as the bonding material 16, the silicone rubber is soft and absorbs the stress due to temperature changes, thus ensuring a long service life for the bonded area. Silicone rubber is generally less expensive than solder metal. Therefore, a cost reduction can be expected.

[0025] The structure of the semiconductor device 100 and the method for manufacturing the semiconductor device 100 are not limited to those mentioned above. For example, the shape of the projection 32 is not limited to a cylindrical shape and can be conical, prismatic, or pyramidal. In the present embodiment, since an electrical connection can be ensured by direct contact between the frame 30 and the conductor 40, the projection 32 can be non-conductive.

[0026] The semiconductor chip 20 can be made from a wide-bandgap semiconductor. The wide-bandgap semiconductor is, for example, silicon carbide, a gallium nitride-based material, or diamond. According to the present embodiment, even when the semiconductor chip 20 made from the wide-bandgap semiconductor operates at a high temperature, its resistance to temperature cycles can be stabilized, so that the semiconductor chip 20 can be operated stably.

[0027] These modifications can be used accordingly for semiconductor devices and methods for manufacturing the semiconductor devices according to the embodiments below. However, for the semiconductor devices and methods for manufacturing the semiconductor devices according to the following embodiments, since they have many similarities to the first embodiment, mainly differences from the first embodiment are explained. Second embodiment

[0028] Fig. Figure 3 is a perspective view of a semiconductor device 200 according to a second embodiment. A conductor 40 need not cover the entire periphery of a projection 32. A partial area 244 for inserting a projection can be a cutout formed in one end of the conductor 40. In this case as well, the conductor 40 and the projection 32 can be stably bonded to one another, while preventing displacement of the conductor 40's position. Third embodiment

[0029] Fig. Figure 4 is a perspective view of a semiconductor device 300 according to a third embodiment. A plurality of sub-areas 44 for inserting a projection can be formed in a channel 40. At this time, a plurality of projections 32a and 32b protrude from a frame 30 and are inserted one-to-one into the plurality of sub-areas 44 for inserting a projection. The number of projections 32 to be provided can be three or more.

[0030] Such a configuration can prevent the lead 40 from rotating around the projections 32 when the bonding material 16 is melted. Consequently, the area where the bonding material 16 is placed can be limited, thereby increasing the assembly density. The configuration in which such rotation is prevented is particularly effective in the case where the bonding material 14 and the bonding material 16 are melted simultaneously, or in the case where the frame 30 and the lead 40 are bonded together before the semiconductor chip 20 and the lead 40 are bonded together. The case in which the bonding material 14 and the bonding material 16 are melted simultaneously refers, for example, to the case where the bonding materials 14 and 16 are made of the same material and the entire semiconductor device 300 is heated to melt the bonding material 16. Fourth embodiment

[0031] In the present embodiment, a frame 30 and a projection 32 are integrally formed. That is, the frame 30 and the projection 32 are formed as the same component from the same material. Here, reference is made to a component comprising the frame 30 and the projection 32 as the frame section.

[0032] The stiffness of the frame section can be increased by integrally forming the frame 30 and the projection 32. Furthermore, this prevents the projection 32 from shifting relative to the frame 30 during the high-temperature melting process of the bonding material 16. Consequently, the assembly density can be increased. The frame section is an integrated component that makes separation of the frame 30 from the projection 32 during temperature cycling difficult, thus ensuring a long service life. In addition, the number of components can be reduced, simplifying component management. Fifth embodiment

[0033] Fig. Figure 5 is a perspective view of a semiconductor device 400 according to a fifth embodiment. Fig. 6 is a cut along a line AA in Fig. Figure 5 shows a cross-sectional view. The semiconductor device 400 has a housing 450 configured to receive a semiconductor chip 20. A projection 432 of the present embodiment is part of the housing 450. A through-hole is formed in a frame 30. The projection 432 extends through the frame 30 and out of the frame 30. In the present embodiment, the frame 30 is overmolded with the housing 450 or formed by insert molding.

[0034] Fig. Figure 7 is a perspective view illustrating an overall configuration of the semiconductor device 400 according to the fifth embodiment. The housing 450 is, for example, made of a synthetic resin such as polyphenylene sulfide (PPS). The housing 450 can accommodate a plurality of semiconductor chips 20 and a plurality of leads 40. The frame 30 is, for example, placed on a seat area in a peripheral part of the housing 450. The semiconductor chip 20 is electrically connected by the frame 30 to an external connection terminal 452 to electrically connect the semiconductor device 400 to the outside world.

[0035] In the present embodiment, the projection 432 is produced when the housing 450 is formed, which makes it easy to create the projection 432. The frame 30 and the housing 450 are made of different materials. Therefore, the projection 432 can be identified by image recognition or the like when the line 40 is mounted. Accordingly, the assembly can be carried out easily.

[0036] Note that the structure of housing 450 of the present embodiment can be used for the other embodiments. Sixth embodiment

[0037] Fig. Figure 8 is a perspective view of a semiconductor device 500 according to a sixth embodiment. The portion 544 for inserting a projection is formed into a polygonal shape in the direction in which the projection 532 extends from the frame 30. The projection 532 is designed to prevent the conductor 40 from rotating around it. That is, corners of the projection 532 contact lateral surfaces of the conductor 40 that form the portion 544 for inserting a projection, thus preventing the conductor 40 from rotating.

[0038] Such a configuration can prevent the lead 40 from rotating around the projection 532 when the bonding material 16 is melted. Accordingly, the assembly density can be increased. The configuration in which such rotation is prevented is particularly effective in the case where the bonding material 14 and the bonding material 16 are melted simultaneously, or in the case where the frame 30 and the lead 40 are bonded together before the semiconductor chip 20 and the lead 40 are bonded together.

[0039] In one example of Fig. In Figure 8, the projection 532 is formed in a prism shape, which has a square shape in plan view. The shape of the projection 532 is not limited to this and can be rectangular, quadrilateral, or any other polygonal shape in plan view. Alternatively, the projection 532 can be formed in a pyramid shape. Furthermore, the partial area 544 for inserting a projection can have any shape that prevents rotation of the line 40 according to the shape of the projection 532. Seventh embodiment

[0040] Fig. Figure 9 is a perspective view of a semiconductor device 600 according to a seventh embodiment. In the present embodiment, the height of a projection 632 from a frame 30 is 2 mm or less. A partial area 644 for inserting a projection is a non-through hole. A guide 40 covers the projection 632.

[0041] Fig. Figure 10 is a diagram illustrating a condition in which the projection 632 is inclined. The height of the projection 632 is denoted by h, and the inclination of the projection 632 relative to the front surface of the frame 30 is denoted by Θ. At this time, the maximum displacement of the bonding position of the line 40 due to the inclination of the projection 632 relative to the target position is hx cos Θ. If the height h of the projection 632 is 2 mm or less, the displacement of the bonding position is limited, thus simplifying production. Eighth embodiment

[0042] Fig. Figure 11 is a perspective view of a semiconductor device 700 according to an eighth embodiment. Fig. 12 is a result of cutting along a line AA in Fig. Figure 11 shows a cross-sectional view. A conductor 40 has one end bonded to a semiconductor chip 20 and the other end bonded to a front surface of a frame 30 by a bonding material 16. The conductor 40 electrically connects the semiconductor chip 20 to the frame 30. In the present embodiment, the bonding material 16 is arranged between a rear surface of the conductor 40 and the front surface of the frame 30. As shown in Figure 11, the conductor 40 is connected to the front surface of the frame 30. Fig. As illustrated in Figure 11, the bonding material 16 can be arranged in a through-hole 746 formed in the conductor 40. However, the through-hole 746 is in Fig. 12 not illustrated.

[0043] The semiconductor device 700 has a (not illustrated) housing 450. The housing 450 of the present embodiment, for example, has a similar structure to that of the one described in Fig.The housing 450 is illustrated in Figure 7. The frame 30 is integrated with the housing 450. The frame 30 is formed with the housing 450 by insert molding. The housing 450 has a projection 752 extending from the front surface of the frame 30. The projection 752 is part of the housing 450. The projection 752 is located at the periphery of the bonding area between the front surface of the frame 30 and the conductor 40. One end of the conductor 40 is surrounded by the projection 752, as viewed in a direction perpendicular to the front surface of the frame 30.

[0044] A method for manufacturing the semiconductor device 700 according to the present embodiment is described. The method for manufacturing the semiconductor device 700 according to the present embodiment comprises first to third steps. The first step is performed before the second and third steps. The second and third steps can be performed simultaneously.

[0045] The first step is a step to prepare the semiconductor chip 20 to be mounted on a circuit structure 10, the frame 30 to be arranged at a distance from the semiconductor chip 20, and the plate-shaped conductor 40. In the first step, the frame 30 is formed with the housing 450 by means of insert molding, and the projection 752 protruding from the front surface of the frame 30 is formed in the housing 450.

[0046] The second step involves bonding the conductor 40 to the semiconductor chip 20 using the bonding material 14. The bonding material 14 is melted by heating the entire semiconductor device 700, by heating the conductor 40 and the semiconductor chip 20, or by applying laser light to the bonding material 14. This allows the conductor 40 to be bonded to the semiconductor chip 20.

[0047] The third step involves bonding the end of the lead 40 to a portion of the frame 30 enclosed by the projection 752 on the front surface of the frame 30 using the bonding material 16. The bonding material 16 is melted by heating the entire semiconductor device 700, by heating the lead 40 and the frame 30, or by applying laser light to the bonding material 16. This allows the lead 40 to bond to the frame 30. Through the second and third steps, the lead 40 electrically connects the semiconductor chip 20 to the frame 30.

[0048] The projection 752 is located at the periphery of the bonding area between the front surface of the frame 30 and the conductor 40. Therefore, the bonding surface of the conductor 40 is recessed below the surrounding surface, thus limiting the bonding area between the frame 30 and the conductor 40 by the projection 752. This means that the bonding area can be limited by the projection 752 when the bonding material 16 is melted. Consequently, the conductor 40 and the frame 30 can be stably bonded together. Furthermore, the assembly density can be increased.

[0049] The frame 30 and the housing 450 of the present embodiment are designed as an integrated component. Therefore, the number of components to be managed during assembly can be reduced, simplifying component management. The frame 30 and the projection 752 are made of different materials. Therefore, the bonding surface can be identified by image recognition or the like when the line 40 is being assembled, thus simplifying the assembly process.

[0050] In the present embodiment, the three sides of the conductor 40 are covered by the projection 752. The configuration is not limited to this, and it is only necessary that the projection 752 be located at the periphery of the bonding section between the front surface of the frame 30 and the conductor 40. For example, it is only necessary that the projection 752 covers one or more sides of the conductor 40. The bonding section between the front surface of the frame 30 and the conductor 40 can be sandwiched within the projection 752 in a direction perpendicular to the front surface of the frame 30. The conductor 40 can be in contact with the projection 752 or separated from it. The through-hole 746 need not be provided in the conductor 40. Ninth embodiment

[0051] The linear expansion coefficient of the projection 752 can be lower than that of the frame 30. This makes it possible to ensure a desired bonding area even if the frame 30 reaches a high temperature when the bonding material 16 melts.

[0052] However, the technical features described in each embodiment can be combined in a suitable manner for use.

[0053] In the semiconductor device according to the first disclosure and the method for manufacturing a semiconductor device according to the third disclosure, the projection and the conductor can be bonded together while the frame and the conductor are in direct contact with each other. Accordingly, the conductor and the projection can be stably bonded together.

[0054] In the semiconductor device according to the second disclosure and the method for manufacturing a semiconductor device according to the fourth disclosure, the projection is located at the periphery of the bonding area between the front surface of the frame and the conductor. This allows the bonding area to be limited when the bonding material is melted. Accordingly, the conductor and the frame can be stably bonded to each other.

[0055] Obviously, in light of the above teachings, many modifications and variations of the present disclosure are possible. It is therefore understood that, within the scope of the attached claims, the disclosure can be implemented in practice in a manner other than specifically described.

[0056] The entire disclosure of Japanese patent application No. 2021-111610, filed on July 5, 2021, including description, claims, drawings and abstract, on which the priority of the present application is based according to the agreement, is incorporated in its entirety by reference herein. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2018152468 A [0002, 0003] JP 2021111610

[0056]

Claims

[1] Semiconductor device (100, 200, 300, 400, 500, 600), comprising: a semiconductor chip (20); a frame (30); a projection (32, 32a, 32b, 432, 532, 632) that extends beyond the frame (30); a conductor (40) in which a sub-area (44, 244, 544, 644) is formed for inserting a projection into which the projection (32, 32a, 32b, 432, 532, 632) is to be inserted, and which directly contacts the frame (30) in order to electrically connect the semiconductor chip (20) to the frame (30); and a first bonding material (16) configured to bond the projection (32, 32a, 32b, 432, 532, 632) to the line (40). [2] Semiconductor device (100, 200, 300, 400, 500, 600) according to claim 1, wherein the first bonding material (16) is arranged between a lateral surface of the conductor (40) which forms the partial area (44, 244, 544, 644) for inserting a projection and the projection (32, 32a, 32b, 432, 532, 632). [3] Semiconductor device (100, 200, 300, 400, 500, 600) according to claim 1 or 2, wherein the first bonding material (16) is non-conductive. [4] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 3, wherein the frame (30) and the conductor (40) are in surface contact with each other. [5] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 4, wherein the conductor (40) and the semiconductor chip (20) are bonded together by a second bonding material (14) and an opening (42) through which the second bonding material (14) is to be exposed is formed in the conduit (40). [6] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 5, wherein the partial area (44, 244, 544, 644) for inserting a projection is a through hole. [7] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 5, wherein the partial area (44, 244, 544, 644) for inserting a projection is a non-through hole. [8] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 5, wherein the partial area (44, 244, 544, 644) for inserting a projection is a cutout formed in one end of the line (40). [9] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 8, wherein a plurality of the sub-areas (44, 244, 544, 644) are designed to insert a projection in the conductor (40). [10] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 9, wherein the frame (30) and the projection (32, 32a, 32b, 432, 532, 632) are formed as one and the same component made of the same material. [11] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 9, further comprising a housing (450) configured to accommodate the semiconductor chip (20), where the projection (32, 32a, 32b, 432, 532, 632) is part of the case (450). [12] Semiconductor device (100, 200, 300, 400, 500, 600) according to claim 11, wherein the projection (32, 32a, 32b, 432, 532, 632) extends through the frame (30) out of the frame (30). [13] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 9, wherein the projection (32, 32a, 32b, 432, 532, 632) is non-conductive. [14] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 13, wherein the sub-area (44, 244, 544, 644) for the insertion of a projection in a direction in which the projection (32, 32a, 32b, 432, 532, 632) extends from the frame (30) is formed into a polygonal shape and the projection (32, 32a, 32b, 432, 532, 632) in the direction in which the projection (32, 32a, 32b, 432, 532, 632) extends from the frame (30) is formed in a polygonal shape, so that a rotation of the line (40) about the projection (32, 32a, 32b, 432, 532, 632) is prevented. [15] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 14, wherein the height of the projection (32, 32a, 32b, 432, 532, 632) from the frame (30) is 2 mm or less. [16] Semiconductor device (100, 200, 300, 400, 500, 600) according to any one of claims 1 to 15, wherein the semiconductor chip (20) is made from a wide bandgap semiconductor. [17] Semiconductor device (100, 200, 300, 400, 500, 600) according to claim 16, wherein the wide bandgap semiconductor is silicon carbide, a gallium nitride-based material or diamond. [18] Semiconductor device (700), comprising: a semiconductor chip (20); a housing (450) configured to accommodate the semiconductor chip (20); a frame (30); and a conductor (40) which is to be bonded to a front surface of the frame (30) by means of a bonding material in order to electrically connect the semiconductor chip (20) to the frame (30), wherein the housing (450) has a projection (752) extending from the front surface, and the projection (752) is located at a periphery of a bonding sub-area between the front surface and the conductor (40). [19] Semiconductor device according to claim 18, wherein the bonding portion is sandwich-like in the projection (752) in a direction perpendicular to the front surface. [20] Semiconductor device according to claim 18 or 19, wherein one end of the conductor (40) is surrounded by the projection (752) in a direction perpendicular to the front surface. [21] Semiconductor device according to one of claims 18 to 20, wherein a linear expansion coefficient of the projection (752) is less than a linear expansion coefficient of the frame (30). [22] Semiconductor device according to one of claims 18 to 21, wherein the semiconductor chip (20) is made from a wide bandgap semiconductor. [23] Semiconductor device according to claim 22, wherein the wide bandgap semiconductor is silicon carbide, a gallium nitride-based material or diamond. [24] Method for manufacturing a semiconductor device (100, 200, 300, 400, 500, 600), comprising: an electrical connection of a semiconductor chip (20) to a conductor (40); and a projection extending from a frame (30) into a sub-area (44, 244, 544, 644) formed in the conductor (40) for the insertion of a projection and a bonding of the projection (32, 32a, 32b, 432, 532, 632) to the conductor (40) in a state in which the frame (30) and the conductor (40) directly touch each other in order to be electrically connected. [25] Method for manufacturing a semiconductor device (100, 200, 300, 400, 500, 600) according to claim 24, wherein the frame (30) and the projection (32, 32a, 32b, 432, 532, 632) are integrally formed together. [26] Method for manufacturing a semiconductor device according to claim 24, wherein the frame (30) with a housing (450) configured to accommodate the semiconductor chip (20) is formed by insert molding and the projection (32, 32a, 32b, 432, 532, 632) is part of the case (450). [27] Method for manufacturing a semiconductor device comprising: a molding by insert molding of a frame (30) with a housing (450) configured to receive a semiconductor chip (20) to form a projection (752) extending from a front surface of the frame (30) in the housing (450); and bonding a conductor (40) through a bonding material to the front surface in order to electrically connect the semiconductor chip (20) to the frame (30) through the conductor (40), wherein the projection (752) is located at a periphery of a bonding sub-area between the front surface and the conductor (40).

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