Semiconductor device

Abstract

Semiconductor device comprising: - a semiconductor module (1) comprising a switching device (6a-6f), a first wiring (P) connected to the switching device (6a-6f), a second wiring (8) positioned adjacent to the first wiring (P) and generating an induced electromotive force corresponding to a change in an electric current flowing in the first wiring (P), and a sealing material (9) that seals the switching device (6a-6f), the first wiring (P) and the second wiring (8), with both one end of the second wiring (8) and the other end of the second wiring (8) being exposed from the sealing material (9); - a substrate (10) comprising a GND electrode (11, 15) connected to one end of the second wiring (8), and on which the semiconductor module (1) is mounted;and a diode (D1) that rectifies the induced electromotive force emitted from the other end of the second wiring (8).

Claims

Semiconductor device comprising: - a semiconductor module (1) comprising a switching device (6a-6f), a first wiring (P) connected to the switching device (6a-6f), a second wiring (8) positioned adjacent to the first wiring (P) and generating an induced electromotive force corresponding to a change in an electric current flowing in the first wiring (P), and a sealing material (9) that seals the switching device (6a-6f), the first wiring (P) and the second wiring (8), with both one end of the second wiring (8) and the other end of the second wiring (8) being exposed from the sealing material (9); - a substrate (10) comprising a GND electrode (11, 15) connected to one end of the second wiring (8), and on which the semiconductor module (1) is mounted;and a diode (D1) that rectifies the induced electromotive force emitted from the other end of the second wiring (8). Semiconductor device according to claim 1, wherein the first wiring (P) is a positive electrode terminal or a negative electrode terminal of the semiconductor module (1). Semiconductor device according to claim 1 or 2, wherein the second wiring (8) comprises two or more wirings (8a, 8b) with different distances from the first wiring (P). Semiconductor device according to one of the preceding claims, wherein the second wiring (8) comprises an inductor (13). Semiconductor device according to one of the preceding claims, further comprising a capacitor (C1) which accumulates an output power of the diode (D1). Semiconductor device according to one of claims 1 to 4, further comprising a rechargeable battery (14) which charges an output power of the diode (D1). Semiconductor device according to one of the preceding claims, wherein the diode (D1) is arranged on an inner side of the semiconductor module (1). Semiconductor device according to claim 5, wherein the GND electrode (11, 15) is a GND electrode (11) on a control side to which the capacitor (C1) is connected. Semiconductor device according to one of claims 1 to 7, wherein the GND electrode (11, 15) is a GND electrode (15) on a power side to which a negative electrode terminal of the semiconductor module (1) is connected. Semiconductor device according to one of the preceding claims, wherein the switching device (6a-6f) is formed from a wide bandgap semiconductor.

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