ORGANIC LIGHT EMISSIONING DISPLAY DEVICE AND ORGANIC LIGHT EMISSIONING DISPLAY PANEL

Abstract

Organic light-emitting display device (100) comprising: a substrate (300); an emission region (EA1) on the substrate (300); a non-emission region (NEA) adjacent to the emission region (EA1) on the substrate (300); a plurality of color filters (317, 318) arranged on the substrate (300), wherein a first color filter (317) of the plurality of color filters (317, 318) overlaps the emission region (EA1) and a second color filter (318) of the plurality of color filters (317, 318) overlaps the non-emission region (NEA); a first insulating layer (401) arranged on the plurality of color filters (317, 318); a first active layer (331) arranged on the first insulating layer (401); a gate electrode arranged on an upper surface of the first active layer (331). is; a second insulating layer (403) arranged on top of the first active layer (331) and the gate electrode;a hole in the second insulating layer (403) exposing a section of the upper surface of the first active layer (331); a bench (390) arranged on the second insulating layer (403); an opening in the bench (390) overlapping the hole; an organic layer (497) arranged on the section of the upper surface of the first active layer (331) and on the bench (390); a cathode electrode arranged on the organic layer (497); a second active layer (332) spaced apart from the first active layer (331); a plate (340) arranged on the second active layer (332), the second active layer (332) comprising: a first active structure (432a) with a transparent conductive material; and a second active structure (432b) arranged on top of the first active structure (432a) of the second active layer (332) and comprising a metallic material, in an area overlapping the plate (340);and a light-blocking layer (515) comprising a metallic material and arranged between the first insulating layer (401) and the first active layer (331).

Description

CROSS-REFERENCE TO RELATED REGISTRATION

[0001] This application claims priority over Korean patent application No. 10-2021-0192617, filed on December 30, 2021. BACKGROUND Technical area

[0002] The present disclosure relates to an organic light-emitting display device and an organic light-emitting display panel. Description of the related technology

[0003] Organic light-emitting display devices feature one or more thin-film transistors (TFTs), a storage capacitor, and a variety of lines.

[0004] One or more thin-film transistors, the capacitor and one or more conductors are sometimes implemented as fine structures on a substrate contained in the organic light-emitting display devices, and the display devices can function based on intricate connections between one or more thin-film transistors, at least one capacitor and one or more conductors.

[0005] Recently, there has been a growing need for organic light-emitting display devices with high luminance and high resolution, and to meet this need, it is desirable to implement a structure that can reduce the complexity of the display device process as well as an efficient spatial arrangement of the elements contained in the display devices. QUICK OVERVIEW

[0006] The present disclosure relates to an organic light-emitting display device and an organic light-emitting display panel, wherein at least one of a plurality of active layers arranged in a circuit area extends to an emission area, such that the active layer serves as the anode electrode of an organic light-emitting element and the plurality of active layers are arranged on the same layer as a plurality of signal lines, thereby simplifying the method.

[0007] The present disclosure relates to the organic light-emitting display device and the organic light-emitting display panel, wherein a bank is arranged such that it exposes at least a part of a side surface of the anode electrode of the organic light-emitting element, thereby improving the aperture ratio.

[0008] According to embodiments of the disclosure, an organic light-emitting display device according to claim 1 can be provided. Furthermore, according to embodiments of the disclosure, an organic light-emitting display panel according to claim 17 can be provided. Furthermore, according to embodiments of the disclosure, a display panel according to claim 18 can be provided. Further embodiments are described in the dependent claims. According to embodiments of the disclosure, the organic light-emitting display device can be provided with an emission region and a non-emission region surrounding the emission region, wherein the organic light-emitting display device comprises: a plurality of color filters arranged on a substrate and a first color filter overlapping the emission region and a second color filter overlapping the non-emission region;a first insulating layer arranged on the color filters, a first active layer arranged on the first insulating layer, a gate electrode arranged on an upper surface of the first active layer, a second insulating layer arranged on the first active layer and the gate electrode, a hole in the second insulating layer exposing part of the upper surface of the first active layer, a bank arranged on the second insulating layer, an opening in the bank overlapping the hole in the second insulating layer, an organic layer arranged on the section of the upper surface of the first active layer and the bank, and a cathode electrode arranged on the organic layer.

[0009] According to embodiments of the disclosure, the organic light-emitting display panel can be provided comprising: a substrate, a plurality of color filters arranged on the substrate and overlapping the emission area, a first insulating layer arranged on the plurality of color filters, a first active layer arranged on the first insulating layer, a gate electrode arranged on an upper surface of the first active layer, a second insulating layer arranged on the first active layer and the gate electrode, a hole in the second insulating layer exposing a portion of the upper surface of the first active layer, the bank arranged on the second insulating layer and an opening overlapping the hole in the second insulating layer, an organic layer arranged on the portion of the upper surface of the first active layer and the bank, and a cathode electrode.which is located on the organic layer.

[0010] According to embodiments of the disclosure, a display panel comprises a substrate, an emission region on the substrate, a non-emission region adjacent to the emission region, a first active layer extending continuously from the emission region into the non-emission region, a driver transistor, and a light-emitting element. The driver transistor comprises a channel region of the first active layer in the non-emission region, a gate electrode overlapping the channel region, and a second insulating layer between the gate electrode and the channel region. The light-emitting element comprises a first electrode in the first active layer in the emission region, an organic layer on the first electrode, and a second electrode on the organic layer.

[0011] According to embodiments of the disclosure, the organic light-emitting display device and the organic light-emitting display panel can be provided wherein at least one of the plurality of active layers arranged in the circuit area extends to the emission area, so that the active layer serves as the anode electrode of the organic light-emitting element and the plurality of active layers are arranged on the same layer as the plurality of signal lines, thereby simplifying the process.

[0012] According to embodiments of the disclosure, the organic light-emitting display device and the organic light-emitting display panel can be provided, wherein the bank is arranged such that it exposes at least part of the side surface of the anode electrode of the organic light-emitting element, thereby improving the aperture ratio. List of characters

[0013] The above and other technical benefits, features and advantages of the disclosure will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which: Fig. 1 a schematic view of a system of an organic light-emitting display device according to embodiments of the disclosure; Fig. 2 a view of a subpixel structure is when an organic light-emitting display panel with organic light-emitting diodes (OLEDs) is used in the display device according to the embodiments of the disclosure; Fig. 3 a view of some areas of the organic light-emitting display device according to embodiments of the disclosure; Fig. 4 a cross-sectional view along lines AB, CD and EF in Fig. 3 is; Fig. 5 a view of a plurality of subpixel areas of the organic light-emitting display device according to embodiments of the disclosure; Fig. 6 a cross-section along the lines GH, IJ and KL in Fig. 5 is; Fig. 7 is a top view showing color filters that are in the structure in Fig. 5 are arranged; Fig. 8 a schematic view of a cross-sectional structure along the line MN in Fig. 7 is; and Fig. 9 to Fig. Twelve schematic views are shown, illustrating the steps for manufacturing the organic light-emitting display device according to the embodiments of the disclosure. DETAILED DESCRIPTION

[0014] In the following description of examples or embodiments of the present disclosure, reference is made to the accompanying drawings, which show specific examples or embodiments that can be implemented for illustrative purposes, and in which the same reference numerals and symbols can be used to designate identical or similar components, even if they are shown in different accompanying drawings. Furthermore, in the following description of examples or embodiments of the present disclosure, detailed descriptions of known functions and components are omitted where it is determined that such a description might render the subject matter rather unclear in some embodiments of the disclosure.The terms used here, such as "contain," "with," "comprise," "exhibiting," and "formed from," are generally intended to allow the addition of other components, unless the terms are used with the expression "only." The singular forms used here include the plural forms, unless the context clearly indicates otherwise.

[0015] Terms such as “first”, “second”, “A”, “B”, “(A)”, or “(B)” may be used here to describe elements of the present revelation. Each of these terms is not used to define the nature, order, sequence, or number of the elements, etc., but serves only to distinguish the respective element from other elements.

[0016] When it is stated that a first element is "connected or coupled to a second element," "touches or overlaps" it, etc., or that the second element "directly touches or overlaps" it, this is to be understood as meaning not only that the first element can be "directly connected or coupled to the second element" or that the second element can "directly touch or overlap" it, but also that a third element can be "inserted" between the first and the second element, or that the first and the second element can be "connected or coupled to each other," "touch or overlap" it, etc., via a fourth element. Here, the second element can be contained within at least one of two or more elements that are "connected or coupled to each other," "touch or overlap" it, etc.

[0017] When time-related terms such as "after", "following", "next", "before" and the like are used to describe processes or operations of elements or configurations or of sequences or steps in operational, processing and manufacturing procedures, these terms may be used to describe non-consecutive or non-sequential processes or operations, unless the term "immediately" or "as soon as" is used together.

[0018] Furthermore, when dimensions, relative sizes, etc., are mentioned, it should be noted that numerical values ​​for elements or characteristics, or corresponding information (e.g., level, range, etc.), may have a tolerance or error range that can be caused by various factors (e.g., process factors, internal or external influences, noise, etc.), even if no specific description is provided. Moreover, the term "may" encompasses all meanings of the term "could."

[0019] Various embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0020] Fig. Figure 1 is a schematic view of a system of an organic light-emitting display device according to embodiments of the disclosure.

[0021] The organic light-emitting display device 100 according to the embodiments of the disclosure can comprise the organic light-emitting display panel PNL, a lighting device, a light-emitting device, and the like. For the sake of simplicity, the organic light-emitting display device 100 will be described primarily below. However, as long as a transistor (transistors) is / are included, the same can be applied to other various organic light-emitting display devices 100, such as a lighting device and a light-emitting device, as well as to the organic light-emitting display device 100 itself.

[0022] The organic light-emitting display device 100 according to embodiments of the disclosure can have a display panel PNL for displaying an image or for emitting light and a control circuit for controlling the display panel PNL.

[0023] Furthermore, according to embodiments of the disclosure, the organic light-emitting display device 100 can be a bottom-emitter type organic light-emitting display device, in which the light is emitted towards a substrate on which a light-emitting element is arranged, although this is not limited. In some cases, the organic light-emitting display device 100 of the disclosure can be of a top-emitter type, in which light is emitted to a surface opposite the substrate on which the light-emitting element is arranged, or of a double-sided emitter type, in which light emitted by the light-emitting element is emitted in the direction towards the substrate and to the surface opposite the substrate.

[0024] A multitude of data lines DL and a multitude of gate lines GL can be arranged on the display panel PNL. Furthermore, a multitude of subpixels SP, arranged in a matrix pattern in the overlapping areas of the multitude of data lines DL and the multitude of gate lines GL, can be placed on the display panel PNL.

[0025] In the PNL display panel, the multitude of data lines DL and the multitude of gate lines GL can be arranged to intersect. For example, the multitude of gate lines GL can be arranged in rows or columns, and the multitude of data lines DL can be arranged in columns or rows. For simplicity, it will be assumed that the multitude of gate lines GL are arranged in rows and the multitude of data lines DL are arranged in columns.

[0026] In addition to the numerous data lines (DL) and gate lines (GL), other types of signal lines can be arranged in the display panel (PNL) depending on the subpixel structure, etc. A driver power line, a reference power line, or a common power line, etc., can also be arranged in the display panel (PNL).

[0027] The types of signal lines arranged in the PNL display panel can vary depending on the subpixel structure, etc. Furthermore, the signal lines in this description may refer to a concept that includes electrodes to which a signal is applied.

[0028] The PNL display panel can have an active area AA, where an image is displayed, and a non-active area NA outside the active area, where no image is displayed. The non-active area NA can also be referred to here as the edge area.

[0029] The multitude of subpixels SP for displaying an image can be arranged in the active area AA.

[0030] In the inactive area NA, a pad section for the electrical connection of a data driver DDR can be arranged, and a plurality of data link lines can be arranged in the inactive area NA to connect the pad section and the plurality of data lines DL. The plurality of data link lines can be sections in which the plurality of data lines DL extend to the inactive area NA, or separate structures that are electrically connected to the plurality of data lines DL.

[0031] Furthermore, in the non-active area NA, gate driver-related wiring for transmitting a voltage (signal) useful for gate control of a gate driver GDR can be arranged across the pad section to which the data driver DDR is electrically connected. The gate driver wiring can include, for example, clock wiring for transmitting a clock signal, gate power lines for transmitting gate voltages (VGH, VGL), gate driver control signal wiring for transmitting various control signals to generate a sample signal, and so on. This gate control-related wiring can be located in the non-active area NA, unlike the gate lines GL, which are located in the active area AA.

[0032] The driver circuit can include the data driver DDR for controlling the multitude of data lines DL, the gate driver GDR for controlling the multitude of gate lines GL, a controller CTR for controlling the data driver DDR and the gate driver GDR, etc.

[0033] The DDR data driver can be used to control the multitude of DL data lines by outputting a data voltage to the multitude of DL data lines.

[0034] The gate driver GDR can be used to control the multitude of gate lines GL by outputting a sampling signal to the multitude of gate lines GL.

[0035] The CTR controller can provide various control signals, DCS and GCS, which are useful for controlling the DDR data driver and the GDR gate driver. Furthermore, the CTR controller can supply image data (DATA) to the DDR data driver.

[0036] The CTR controller can initiate sampling according to the timing implemented in each frame. The CTR controller can convert externally inputted image data into a data signal format used by the data driver (DDR) to output the converted image data (DATA) and control the data transmission to a suitable timing point in accordance with the sampling.

[0037] To control the data driver DDR and the gate driver GDR, the CTR controller can receive timing signals such as a vertical synchronization signal Vsync, a horizontal synchronization signal Hsync, an input data release signal (DE) and a clock signal CLK from an external device (e.g. a host system) to generate various control signals that are output to the data driver DDR and the gate driver GDR.

[0038] To control the gate driver GDR, the controller CTR can, for example, output various gate control signals GCS, including a gate start pulse (GSP), a gate shift clock (GSC), a gate output enable signal (GOE), and similar signals.

[0039] To control the DDR data driver, the CTR controller can also output various DCS data control signals, including a Source Start Pulse (SSP), a Source Sample Clock (SSC), a Source Output Release Signal (SOE), and so on.

[0040] The CTR controller can be a timing controller used in conventional display technology, or a controller that can also perform other control functions, including timing control.

[0041] The CTR controller can be implemented as a separate component from the DDR data driver or as a circuit integrated with the DDR data driver.

[0042] The DDR data driver can receive the image data DATA from the CTR controller and provide a data voltage to the multiple data lines DL to control them. In this context, the DDR data driver can also be referred to as a source driver.

[0043] The data driver (DDR) can exchange various signals with the CTR controller via different interfaces.

[0044] The gate driver GDR can sequentially supply the multiple gate lines GL with sampling signals in order to control the multiple gate lines GL one after the other. In this context, the gate driver GDR can also be referred to as a sampling driver.

[0045] The gate driver GDR, under the control of the controller CTR, can sequentially provide a sampling signal with an on / off voltage to the multitude of gate lines GL.

[0046] When a specific gate line is opened by the gate driver GDR, the data driver DDR can convert the image data DATA received by the controller CTR into an analog data voltage, which is fed to the multitude of data lines DL.

[0047] The DDR data driver can be located on only one side (e.g., either the top or the bottom) of the PNL display panel, but its location is not limited to this. It can, for example, be located on both sides (e.g., both the top and the bottom) of the PNL display panel, depending on the control method, the display panel design, etc.

[0048] The gate driver GDR can be located on only one side (e.g., either the left or the right side) of the display panel PNL, but the disclosure is not limited to this. It can, for example, be located on both sides (e.g., both the left and the right side) of the display panel PNL, depending on a control method, a display panel design method, etc.

[0049] The DDR data driver can be implemented with at least one integrated source driver circuit (SDIC).

[0050] Each integrated source driver circuit (SDIC) can include a shift register, a latch circuit, a digital-to-analog converter (DAC), an output buffer, and similar components. In some cases, the data driver (DDR) may also include at least one analog-to-digital converter (ADC).

[0051] Each SDIC integrated source driver circuit can be connected to a bonding pad of the PNL display panel, either via automatic tape bonding (TAB) or chip-on-glass (COG), or it can be directly mounted on the PNL display panel. In some cases, each SDIC integrated source driver circuit can be integrated within the PNL display panel. Furthermore, each SDIC integrated source driver circuit can be implemented as a chip-on-film (COF). In this case, each SDIC integrated source driver circuit can be mounted on a circuit film and electrically connected to the PNL display panel's data lines (DL) through the circuit film.

[0052] The gate driver GDR can have a multitude of gate driver circuits GDC. The multitude of gate driver circuits GDC can correspond to the multitude of gate lines GL.

[0053] Each gate driver circuit (GDC) can include a shift register, a level shifter, and the like.

[0054] Each gate driver circuit (GDC) can be connected to the bonding pad of the display panel (PNL) using either automatic tape bonding (TAB) or chip-on-glass (COG) technology. Alternatively, each GDC can be implemented as a chip-on-film (COF). In this case, each GDC can be applied to a circuit film, allowing electrical connection to the gate lines (GL) of the display panel (PNL) through the film. Finally, each GDC can be implemented as a gate-in-panel (GIP) and embedded within the display panel (PNL). This means each GDC can be directly integrated into the display panel (PNL).

[0055] Fig. Figure 2 shows a subpixel SP structure when an organic light-emitting display panel PNL, which has an organic light-emitting element, for example an organic light-emitting diode (OLED), is used in the display device according to the embodiments of the disclosure.

[0056] Referring to Fig. 2 each subpixel SP in the organic light-emitting display panel PNL, which includes the organic light-emitting element; a second transistor T2, which passes a data voltage Vdata to a first node N1, which corresponds to a gate node of a driver transistor T1; and a storage capacitor Cst to maintain the data voltage Vdata, which corresponds to a picture signal voltage or a voltage corresponding to it, during a frame time.

[0057] The organic light-emitting element OLED can have a first electrode (an anode electrode or a cathode electrode), an organic layer with at least one emission layer, and a second electrode (the cathode electrode or the anode electrode), etc.

[0058] In one embodiment, a base voltage EVSS can be applied to the second electrode of the organic light-emitting element OLED.

[0059] The driver transistor T1 can control the organic light-emitting element OLED by supplying a driver current to the organic light-emitting element OLED.

[0060] The driver transistor T1 can have a first node N1, a second node N2 and a third node N3.

[0061] The “node” of the first to third nodes N1, N2 and N3 can denote a point, one or more electrodes or one or more conductors that have the same electrical state.

[0062] Each of the first node N1, the second node N2 and the third node N3 can have one or more electrodes.

[0063] The first node N1 of the driver transistor T1 can be a node corresponding to the gate node of the same, and can be electrically connected to a source node or a drain node of the second transistor T2.

[0064] The second node N2 of the driver transistor T1 can be electrically connected to the first electrode of the organic light-emitting element OLED and can be a source node or a drain node.

[0065] The third node N3 of the driver transistor T1 can be the drain node or the source node as a node to which a driver voltage EVDD is applied, and can be electrically connected to a driver voltage line DVL to allow the driver voltage EVDD to pass through.

[0066] The driver transistor T1 and the second transistor T2 can be n-type or p-type transistors.

[0067] The second transistor T2 can be electrically connected between a data line DL and the first node N1 of the driver transistor T1 and can be controlled by a first sampling signal SCAN1, which is supplied via a gate line and applied to the gate node of the second transistor T2.

[0068] The second transistor T2 can be switched on by the first sampling signal SCAN1 and a data voltage Vdata, carried via the data line DL, can be applied to the first node N1 of the driver transistor T1.

[0069] The storage capacitor Cst can be electrically connected between the first node N1 and the second node N2 of the driver transistor T1.

[0070] The storage capacitor Cst is an external capacitor that is intentionally designed to be located outside the driver transistor T1, unlike an internal storage capacitor such as a parasitic capacitor (e.g., a Cgs and a Cgd) that lies between the first node N1 and the second node N2 of the driver transistor T1.

[0071] A third transistor T3 can be electrically connected between the second node N2 of the driver transistor T1 and a reference voltage line RVL. The switching on and off operations of the third transistor T3 can be controlled by a second sampling signal SCAN2, which is applied to the gate node of the third transistor T3.

[0072] A drain node or a source node of the third transistor T3 can be electrically connected to the reference voltage line RVL and electrically to the second node N2 of the driver transistor T1.

[0073] The third transistor T3 can, for example, be switched on in a period when the display is being driven and in a period when the detection drive is being driven, in order to detect a characteristic value of the driver transistor T1 or a characteristic value of the organic light-emitting diode (OLED).

[0074] The third transistor T3 can be switched on by the second sampling signal SCAN2 and forward a reference voltage Vref applied to the reference voltage line RVL to the second node N2 of the driver transistor T1 according to the corresponding control timings (e.g. a display control timing or an initial timing within a time period for the sampling control).

[0075] The third transistor T3 can be switched on by the second sampling signal SCAN2 and pass a voltage at the second node N2 of the driver transistor T1 to the reference voltage line RVL according to the corresponding control timings (e.g. a sampling timing within the period for the sampling control).

[0076] In other words, the third transistor T3 can control a voltage state at the second node N2 of the driver transistor T1 or pass the voltage at the second node N2 of the driver transistor T1 to the reference voltage line RVL.

[0077] The reference voltage line RVL can be electrically connected to an analog-to-digital converter that detects a voltage from the reference voltage line RVL, converts the detected voltage into a digital value, and then outputs detection data including the digital value.

[0078] The analog-to-digital converter can be contained in the integrated source driver circuit SDIC, which implements the DDR data driver.

[0079] The measurement data output by the analog-to-digital converter can be used to capture a characteristic value of the driver transistor T1 (e.g., a threshold voltage, mobility, etc.) or a characteristic value of the organic light-emitting diode (OLED) (e.g., a threshold voltage, etc.).

[0080] The driver transistor T1, the second transistor T2 and the third transistor T3 can each be an n-type transistor or a p-type transistor.

[0081] Meanwhile, the first sampling signal SCAN1 and the second sampling signal SCAN2 can be separate gate signals. In this case, the first sampling signal SCAN1 and the second sampling signal SCAN2 can be applied to the gate node of the second transistor T2 and the gate node of the third transistor T3, respectively, via different gate lines.

[0082] In some embodiments, the first sampling signal SCAN1 and the second sampling signal SCAN2 can be the same gate signal. In this case, the first sampling signal SCAN1 and the second sampling signal SCAN2 can be applied together to the gate node of the second transistor T2 and the gate node of the third transistor T3 via the same gate line.

[0083] Each in Fig. The subpixel structure shown in Figure 2 is merely an example of possible subpixel structures, and the subpixel may also contain at least one transistor or, in some cases, at least one storage capacitor.

[0084] In some embodiments, each of a plurality of subpixels can have the same structure, or some of the plurality of subpixels can have a different structure.

[0085] Fig. Figure 3 is a view of some areas of an organic light-emitting display device according to embodiments of the disclosure. Fig. Figure 4 is a cross-sectional view along lines AB, CD and EF in Fig. 3.

[0086] Referring to the Fig. 3 and Fig. 4 The organic light-emitting display device 100 according to the embodiments of the disclosure can have an active area in which a plurality of subpixels are arranged and a non-active area in which a plurality of pad electrodes 495 are arranged.

[0087] The multitude of subpixels can include first, second, third and fourth subpixels SP1, SP2, SP3 and SP4.

[0088] The first subpixel SP1 can have a first emission region EA1 that emits red light; the second subpixel SP2 can have a second emission region EA2 that emits white light; the third subpixel SP3 can have a third emission region EA3 that emits blue light; and the fourth subpixel SP4 can have a fourth emission region EA4 that emits green light, but embodiments of the disclosure are not limited thereto.

[0089] The subpixels SP1, SP2, SP3 and SP4 can have emission areas EA1, EA2, EA3 and EA4, each separated by a bank 390, and a non-emission area NEA.

[0090] The first, second, third and fourth emission areas EA1, EA2, EA3 and EA4 may not overlap Bank 390, and the non-emission area may overlap Bank 390.

[0091] An organic light-emitting element (OLED) with a first electrode, an organic layer 497, and a second electrode 498 can be arranged in the emission region EA. A color filter 317 can be arranged in a region that overlaps the organic light-emitting element (OLED), but the disclosure is not limited thereto. For example, the color filter may be arranged in only some subpixels from the plurality of subpixels contained in the organic light-emitting display device 100, or it may not be arranged in all of the plurality of subpixels contained therein.

[0092] For example, a first color filter 317 can be arranged in the first subpixel SP1 to overlap the first emission area EA1; a second color filter 318 can be arranged in the third subpixel SP3 to overlap the third emission area EA3; and a third color filter 319 can be arranged in the fourth subpixel SP4 to overlap the fourth emission area EA4.

[0093] In the second emission area EA2, a color filter may not be arranged, but the structure of the organic light-emitting display device according to embodiments of the disclosure is not limited thereto.

[0094] A circuit area for controlling the organic light-emitting element OLED can be provided in the non-emission area (NEA).

[0095] The circuit area can contain a large number of signal lines, a large number of transistors and a storage capacitor Cst.

[0096] Referring to Fig. 4 The multitude of color filters 317 and 318 can be arranged on a substrate 300.

[0097] As in Fig. As illustrated in Figure 4, a first color filter section of the first color filter 317 can be arranged at a position corresponding to the first emission area EA1.

[0098] A second color filter section of the first color filter 317, which is separated from the first color filter section of the first color filter 317, can be arranged in the non-emission region NEA such that it corresponds to the first emission region EA1, and the second color filter 318 can be arranged on the first color filter 317.

[0099] The first color filter 317 and the second color filter 318, which are stacked on the substrate 300, can overlap the circuit area of ​​the subpixels.

[0100] The first color filter 317 can be a red color filter and the second color filter 318 can be a blue color filter, but the colors of the color filters according to embodiments of the disclosure are not limited thereto. It is sufficient if the colors of the first color filter 317 and the second color filter 318, which are arranged in the non-emission region NEA, are different from each other.

[0101] In particular, a first signal line 311, a second signal line 312, a third signal line 313, a fourth signal line 314 and a first conductive layer 315 can be arranged on the substrate 300.

[0102] As in Fig. As illustrated in Figure 4, a first insulating layer 401 can be arranged on the substrate 300, on which the first and second color filters 317, 318 are arranged.

[0103] The first insulating layer 401 can have an organic insulating material and can be arranged on the substrate 300 in such a way that it has a flat surface.

[0104] Referring to the Fig. 3 and Fig. 4 A plurality of active layers 331, 332 and 333 can be arranged on the first insulating layer 401.

[0105] Referring to the Fig. 3 and Fig. 4 In particular, the first active layer 331, the second active layer 332 and the third active layer 333 can be arranged on the first insulating layer 401.

[0106] Each of the subpixels SP1, SP2, SP3 and SP4 can have the first to third active layer 331, 332 and 333.

[0107] Referring to the Fig. 3 and Fig. 4 The second active layer 332 and the third active layer 333, which are spaced apart from the first active layer 331, can be arranged on the substrate 300.

[0108] The first active layer 331 can be an active layer of a first transistor T1.

[0109] The second active layer 332 can be an active layer of a second transistor T2.

[0110] The third active layer 333 can be an active layer of a third transistor T3.

[0111] As from the Fig. 3 and Fig. As can be seen in Figure 4, the first to third active layers 331, 332 and 333 can be formed as a single layer in some areas and as a double layer in other areas.

[0112] The first to third active layers 331, 332 and 333 can each have a first active structure and a second active structure, which is arranged on the first active structure in an area that is in contact with other components through a contact hole.

[0113] As in Fig. As illustrated in Figure 4, the second active layer 332 can, for example, have the first active structure 432a and the second active structure 432b, which is arranged on top of the first active structure 432a.

[0114] The first active structure 432a can be formed from an oxide semiconductor.

[0115] A metal oxide semiconductor can be the material from which the first active structure 432a is made. That is, the first active structure 432a can consist of oxides of metals such as molybdenum (Mo), zinc (Zn), indium (In), gallium (Ga), tin (Sn), and titanium (Ti), or combinations of these metals and their oxides.

[0116] The first active structure 432a may, for example, comprise at least one of the following transparent conductive materials: zinc oxide (ZnO), zinc tin oxide (ZTO), zinc indium oxide (ZIO), indium oxide (InO), titanium oxide (TiO), indium gallium zinc oxide (IGZO) and indium zinc tin oxide (IZTO), but the disclosure is not limited thereto.

[0117] The metal layer of the second active structure 432b can comprise any metal such as aluminum (Al), gold (Au), silver (Ag), copper (Cu), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta), and titanium (Ti), or alloys thereof. For example, the metal layer could be an alloy of molybdenum (Mo) and titanium (Ti), but the disclosure is not limited to this.

[0118] The first and third active layers 331, 333, just like the second active layer 332, can also have the first active structure and the second active structure on the first active structure.

[0119] The first to third active layers 331, 332 and 333 can each have a channel area 331a, 332a and 333a.

[0120] More precisely, the first active layer 331 can have the first channel area 331a, the second active layer 332 the second channel area 332a and the third active layer 333 the third channel area 333a.

[0121] The first channel area 331a can be a channel area of ​​the first transistor T1, the second channel area 332a can be a channel area of ​​the second transistor T2, and the third channel area 333a can be a channel area of ​​the third transistor T3.

[0122] Only the first active structure 431a of the first to third active layer 331, 332 and 333 can be arranged in the first to third channel regions 331a, 332a and 333a.

[0123] At least some of the areas other than the first to third channel area 331a, 332a and 333a of the first active structure 431a of each of the first to third active layer 331, 332 and 333 may be conductive.

[0124] In other words, in the first to third channel regions 331a, 332a, and 333a of the first active structure 431a of each of the first to third active layers 331, 332, and 333, the first active structure 431a can be non-conductive. It should be understood that "non-conductive" or "non-conducting" includes the meaning of semiconducting. For example, the first to third channel regions 331a, 332a, 333a cannot conduct electric current in a non-biased state or in a reverse-biased state, and can conduct electric current in a forward-biased state, for example, when an electrical voltage greater than a threshold voltage of the first to third channel regions 331a, 332a, 333a is applied to them.The fact that the first active structure 431a is “conducting” means that an electric current flows through the first active structure 431a in the presence of an electrical bias, even if the electrical bias is below the threshold voltage.

[0125] As mentioned above, the second active structure 431b can be located in at least some of the regions that do not belong to the first to third channel regions 331a, 332a and 333a of the first to third active layers 331, 332 and 333.

[0126] The areas where the first to third active layers 331, 332 and 333 are connected to other components via the contact holes can serve as source electrodes or drain electrodes of the first to third transistors T1, T2 and T3.

[0127] As in the Fig. 3 and Fig. As shown in Figure 4, the first active layer 331 in each of the subpixels SP1, SP2, SP3 and SP4 can be arranged so that it extends not only to the non-emission area NEA but also to the emission areas EA1, EA2, EA3 and EA4.

[0128] In particular, the first active layer 331, which is located in the circuit area of ​​each of the subpixels SP1, SP2, SP3 and SP4, can be arranged such that it extends not only to the emission areas EA1, EA2, EA3 and EA4 of the subpixels but also to a part of the non-emission area NEA that surrounds the emission areas.

[0129] Only the first active structure 431a can be located on the first active layer 331 in the emission regions EA1, EA2, EA3 and EA4 and the part of the non-emission region NEA that surrounds the emission regions of the subpixels SP1, SP2, SP3 and SP4.

[0130] An area in which the first active layer 331 is arranged in the emission regions EA1, EA2, EA3 and EA4, and the part of the non-emission region NEA that surrounds the emission regions of the subpixels SP1, SP2, SP3 and SP4, can serve as a first electrode (e.g. an anode electrode) of the organic light-emitting element OLED.

[0131] Referring to the Fig. 3 and Fig. 4. The multiple signal lines 311, 312, 313 and 314 can be arranged on the same layer as the first to third active layers 331, 332 and 333 and have the same material as the first to third active layers 331, 332 and 333.

[0132] The multitude of signal lines 311, 312, 313 and 314 can have the first, second, third and fourth signal lines 311, 312, 313 and 314.

[0133] The first to fourth signal lines 311, 312, 313, and 314 can be spaced apart and extend in a first direction (e.g., a vertical direction). "Extend in a first direction" means that they extend completely straight in the first direction and generally in the first direction (e.g., including curves or detours). As in Fig. As illustrated in Figure 3, the first signal line 311 generally extends in the first direction alongside the first emission area EA1 and includes a section that curves towards the first emission area EA1 and away from the second emission area EA2. Although the first signal line 311 does not extend perfectly straight in the first direction along its entire length, it is considered to be “extending in the first direction.” Another term for this is “extending in a substantially vertical direction.”

[0134] Here, the first and second signal lines 311 and 312 can be data lines, the third signal line 313 can be a drive voltage line, and the fourth signal line 314 can be a reference voltage line, but the disclosure is not limited to this.

[0135] At least one of the first to fourth signal lines 311, 312, 313 and 314 can have a structure in which the first active structure and the second active structure, which is arranged on top of the first active structure, are arranged.

[0136] As in Fig. As illustrated in Figure 4, the first signal line 311 can, for example, have the first active structure 411a on the first insulating layer 401 and the second active structure 411b on the first active structure 411a.

[0137] The second to fourth signal lines 312, 313 and 314 can each also have the first active structure 411a and the second active structure 411b.

[0138] If the first to fourth signal lines 311, 312, 313 and 314 have only the first active structure 411a, the oxide semiconductor of the first active structure 411a of the first to fourth signal lines 311, 312, 313 and 314 can be conductive.

[0139] Referring to Fig. 3 the first active layer 331, which is located on the first subpixel SP1, can be integrated with the third signal line 313, and the second active layer 332, which is located on it, can be integrated with the first signal line 311.

[0140] The second active layer 332, which is located on the second subpixel SP2, can be integrated with the second signal line 312.

[0141] The second active layer 332, which is located on the third subpixel SP3, can be integrated with the first signal line 311 and can be a different line than the first signal line 311, which is integrated with the second active layer 332 of the first subpixel SP1.

[0142] The first active layer 331, located on the fourth subpixel SP4, can be integrated with the third signal line 313 and can be a different line than the third signal line 313 that is integrated with the first active layer 331 of the first subpixel SP1.

[0143] The second active layer 332, which is located on the fourth subpixel SP4, can be integrated with the second signal line 312 and can be a different line than the second signal line 312, which is integrated with the second active layer 332 of the second subpixel SP2.

[0144] As in Fig. As illustrated in Figure 3, the multitude of subpixels SP1, SP2, SP3 and SP4 can each have a repair structure 381 located between one of the first to fourth signal lines 311, 312, 313 and 314 and the third active layer 333.

[0145] It is possible that the electrical connection between the first active layer 331, which extends to the emission region, and the circuit region is interrupted using a laser, etc., if defects such as bright or dark spots in the subpixels occur.

[0146] The repair structure 381 can then be electrically connected to a plate 340 by a welding process. For example, the repair structure 381 and the plate 340 arranged on the repair structure 381 can be in contact with each other.

[0147] Although in Fig. Not illustrated in Figure 3, the repair structure 381 can be electrically connected to the circuit area of ​​another adjacent subpixel, and a defective subpixel can be addressed by an adjacent circuit area that is electrically connected to the repair structure 381.

[0148] As described above, the first to third active layers 331, 332 and 333, the first to fourth signal lines 311, 312, 313 and 314 and the repair structure 381 can be arranged on the same layer and formed by the same process, thereby simplifying the process of manufacturing the organic light-emitting display device.

[0149] If the first to third active layers 331, 332 and 333, the first to fourth signal lines 311, 312, 313 and 314, and the repair structure 381 are fabricated by different methods, a mask is used for each method. However, in the case of using the organic light-emitting display device according to embodiments of the disclosure, it may be possible to fabricate the first to third active layers 331, 332 and 333 and the first to fourth signal lines 311, 312, 313 and 314 simultaneously with a single mask, thereby reducing the number of masks used.

[0150] A second insulating layer 402 can be arranged on part of the top surface of each of the first to third active layers 331, 332 and 333, the first to fourth signal lines 311, 312, 313 and 314 and the repair structure 381.

[0151] The second insulating layer 402 can comprise an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx) or silicon oxynitride (SiON), but embodiments of the disclosure are not limited thereto.

[0152] The second insulating layer 402 can be a gate insulating layer, but embodiments of the disclosure are not limited to this.

[0153] A fifth signal line 345, a first extension 346, a second extension 348, the plate 340 and a first electrode structure 341 can be arranged on the second insulating layer 402.

[0154] Here, the fifth signal line 345 can be a scanning line that extends in a second direction (e.g., a horizontal direction) that intersects the first direction. As in Fig. As illustrated in Figure 3, part of the fifth signal line 345 can overlap part of the second and third active layers 332, 333.

[0155] The fifth signal line 345 can serve as a gate electrode for the second transistor T2 and the third transistor T3.

[0156] An area where the second active layer 332 or the third active layer 333 overlaps the fifth signal line 345 and the second insulating layer 402 can be the channel area of ​​the second active layer 332 or the third active layer 333.

[0157] The first extension 346 can be electrically connected to the third signal line 313. The multiple subpixels SP1, SP2, SP3, and SP4 can receive a control voltage through the first extension 346.

[0158] The second extension 348 can be electrically connected to the fourth signal line 314. The multiple subpixels SP1, SP2, SP3, and SP4 can receive a reference voltage via the second extension 348.

[0159] As in Fig. As illustrated in Figure 3, a section of the plate 340 in each of the subpixels SP1, SP2, SP3 and SP4 can overlap a section of each of the first to third active layers 331, 332 and 332.

[0160] The first active layer 331 can come into contact with the plate 340 through the contact hole and be electrically connected to it.

[0161] The third active layer 333 can also be in contact with the plate 340 through the contact hole and be electrically connected to it.

[0162] As in Fig. 3 and Fig. As illustrated in Figure 4, the second active layer 332 can overlap the plate 340 to form a storage capacitor Cst. In other words, the second active layer 332 and the plate 340 can serve as electrodes of the storage capacitor Cst.

[0163] A section of the first electrode structure 341 can overlap a section of the first active layer 331.

[0164] The first electrode structure 341 can serve as a gate electrode for the driver transistor T1.

[0165] As in the Fig. 3 and Fig. As illustrated in Figure 4, an area where the first active layer 331 overlaps the first electrode structure 341 and the second insulating layer 402 can be the channel area 331a of the first active layer 331.

[0166] As in Fig. As illustrated in Figure 3, the first electrode structure 341 can be in contact with the second active layer 332 through the contact hole and be electrically connected to it.

[0167] Referring to the Fig. 3 and Fig. 4 At least one pad electrode 495 can be arranged in a pad area PAD of the organic light-emitting display device according to the embodiments of the disclosure.

[0168] The pad electrode 495 can be arranged on the second insulating layer 402 in the pad area PAD.

[0169] The fifth signal line 345, the first extension 346, the second extension 348, the plate 340, the first electrode structure 341 and the pad electrode 495 can have a multilayer structure.

[0170] For example, the fifth signal line 345, the first extension 346, the second extension 348, the plate 340, the first electrode structure 341 and the pad electrode 495 can each have a first conductive layer 411a, 440a, 441a and 495a on the second insulating layer 402 and a second conductive layer 411b, 440b, 441b and 495b on the first conductive layer.

[0171] The first conductive layer 411a, 440a, 446a and 495a can comprise any metal such as aluminum (Al), gold (Au), silver (Ag), copper (Cu), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta) and titanium (Ti) or alloys thereof, but embodiments of the disclosure are not limited thereto.

[0172] The second conductive layer 411b, 440b, 441b and 445b may comprise indium tin oxide (ITO), indium zinc oxide (IZO) or indium gallium zinc oxide (IGZO), but embodiments of the disclosure are not limited thereto.

[0173] The structure of the organic light-emitting display device 100 according to the embodiments of the disclosure is not limited thereto. The pad electrode 495, which is arranged in a non-active region, can have a stack of several layers, and the fifth signal line 345, the first extension 346, the second extension 348, the plate 340 and the first electrode structure 341, which are arranged in an active region, can have a single layer comprising only the first conductive layer.

[0174] The second conductive layer 495b, which is contained in the pad electrode 495, can serve to prevent the oxidation of the first conductive layer 495a.

[0175] Fig. Figure 4 shows a structure in which the second conductive layer 411b, 440b, 441b and 495b is arranged only on the upper surface of the first conductive layer 411a, 440a, 446a and 495a, but the second conductive layer can be arranged to surround the upper surface and side faces of the first conductive layer.

[0176] As described above, the fifth signal line 345, the first extension 346, the second extension 348, the plate 340, the first electrode structure 341 and the pad electrode 495 can be arranged on the same layer and formed by the same process, thereby simplifying the process of manufacturing the organic light-emitting display device.

[0177] If the fifth signal line 345, the first extension 346, the second extension 348, the plate 340, the first electrode structure 341, and the pad electrode 495 are manufactured by different methods, a mask is used for each method. However, in the case of using the organic light-emitting display device according to embodiments of the disclosure, it may be possible for the fifth signal line 345, the first extension 346, the second extension 348, the plate 340, the first electrode structure 341, and the pad electrode 495 to be manufactured simultaneously with a single mask, thereby reducing the number of masks used.

[0178] As in Fig. As illustrated in Figure 4, a third insulating layer 403 can be arranged on the substrate 300, on which the fifth signal line 345, the first extension 346, the second extension 348, the plate 340, the first electrode structure 341 and the pad electrode 495 are arranged.

[0179] The third insulating layer 403 can comprise an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx) or silicon oxynitride (SiON), but the embodiments of the disclosure are not limited thereto.

[0180] As in the Fig. 3 and Fig. As illustrated in Figure 4, the third insulating layer 403 may have a first hole H1 that exposes part of the upper surface of the first active layer 331.

[0181] The bank 390 can be arranged on the third insulating layer 403.

[0182] Bank 390 can have an opening in each of the subpixels SP1, SP2, SP3 and SP4, and the opening can overlap the first hole H1 of the third insulating layer 403.

[0183] As in Fig. As illustrated in Figure 4, only the conducting first active structure 431a can be arranged on the first active layer 331, which is exposed through the opening of the bank 390 and the first hole H1 of the third insulating layer 403.

[0184] The conductive first active structure 431a on the first active layer 331, exposed through the opening of bank 390 and the first hole H1 of the third insulating layer 403, can serve as the first electrode (e.g. the anode electrode) of the organic light-emitting element OLED.

[0185] The organic layer 497 of the organic light-emitting element OLED can be arranged in the opening of the bank 390 and the first hole H1 of the third insulating layer 403 and on the bank 390. The organic layer 497 can have an emission layer.

[0186] The second electrode 498 of the organic light-emitting element OLED can be arranged on the organic layer 497.

[0187] Meanwhile, the first color filter 317 and the second color filter 318, which is arranged on the first color filter 317, are arranged in the circuit area of ​​each subpixel in the non-emission region (NEA), so that it may be possible to prevent light from entering the channel areas of the first to third active layers 331, 332 and 333.

[0188] This prevents the properties of the first to third transistors T1, T2 and T3 from being altered by the light.

[0189] The Fig. 3 and Fig. Figure 4 shows a structure in which the first to fourth signal lines 311, 312, 313 and 314 are arranged on the same layer as the first to third active layers 331, 332 and 333, but the structure of the organic light-emitting display device according to the embodiments of the disclosure is not limited thereto.

[0190] Fig. Figure 5 is a view of a plurality of subpixel areas of an organic light-emitting display device according to embodiments of the disclosure. Fig. Figure 6 is a cross-sectional view along lines GH, IJ and KL in Fig. 5.

[0191] In the following description, a feature, effect, etc., that was described in the embodiments mentioned above will not be repeated. Furthermore, the same reference numeral may be used if a feature described above is described again in the following description.

[0192] As in the Fig. 5 and Fig. As illustrated in Figure 6, a variety of color filters 317 and 318 can be arranged on a substrate 300.

[0193] Although in the Fig. 5 and Fig. Not illustrated in Figure 6, at least one buffer layer can be arranged between the substrate 300 and the plurality of color filters 317 and 318.

[0194] A first insulating layer 401 can be arranged on the substrate 300, on which the first and second color filters 317, 318 are arranged.

[0195] As in the Fig. 5 and Fig. As illustrated in Figure 6, a first, a second, a third and a fourth signal line 511, 512, 513 and 514 as well as a light-blocking layer 515 can be arranged on the first insulating layer 401.

[0196] The first to fourth signal lines 511, 512, 513 and 514 and the light-blocking layer 515 on the first insulating layer 401 can comprise metals such as aluminum (Al), gold (Au), silver (Ag), copper (Cu), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta) and titanium (Ti) or alloys thereof. For example, a metal layer could be an alloy of molybdenum (Mo) and titanium (Ti), but the disclosure is not limited to this.

[0197] The light-blocking layer 515 can be arranged in a circuit region of each of the subpixels SP1, SP2, SP3, and SP4. Preferably, the light-blocking layer 515 can be arranged in the non-emission region (NEA) and overlap a portion of the first active layer 331, as well as a portion of the second active layer 332 and the third active layer 333, which are spaced apart from the first active layer 331.

[0198] As in Fig. As illustrated in Figure 6, a fourth insulating layer 604 can be arranged on the substrate 300, on which the first to fourth signal lines 511, 512, 513 and 514 and the light-blocking layer 515 are arranged.

[0199] The fourth insulating layer 604 can comprise an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx) or silicon oxynitride (SiON), but embodiments of the disclosure are not limited thereto.

[0200] As in the Fig. 5 and the Fig. As illustrated in Figure 6, the first to third active layers 331, 332 and 333, as well as a repair structure 381, can be arranged on the fourth insulating layer 604.

[0201] Each of the first to third active layers 331, 332 and 333 can be formed as a double layer in an area that is in contact with other components via a contact hole.

[0202] In other words, each of the first to third active layers 331, 332 and 333 can have a first active structure and a second active structure arranged on the first active structure in the area that is in contact with other components through the contact hole.

[0203] For example, the second active layer 332 can have the first active structure 432a and the second active structure 432b in an area where it is in contact with a plate 340 through the contact hole.

[0204] Furthermore, the second active layer 332, as in Fig. As shown in Figure 6, the contact hole can be in contact with an electrode structure 341 and can have the first active structure 432a and the second active structure 432b, which is arranged on the first active structure 432a in an area where it overlaps the plate 340 to form a storage capacitor Cst.

[0205] Although in Fig. Not shown in Figure 6, the third active layer 333 can have the first active structure and the second active structure, which is arranged on the first active structure in an area that is in contact with the plate 340 and a second extension 348.

[0206] The areas where the first to third active layers 331, 332 and 333 are connected to other components via the contact holes can serve as source electrodes and drain electrodes of the first to third transistors T1, T2 and T3.

[0207] Taking a first subpixel SP1 as an example, as in Fig. As illustrated in Figure 5, part of the first active layer 331 can be in contact with a first extension 346, which is connected via the contact hole to a third signal line 515. Another part of the first active layer 331 can be connected to the plate 340 through the contact hole.

[0208] A section of the second active layer 332 can be connected via the contact hole to a first electrode structure 341. Another section of the second active layer 332 can be connected via the contact hole to a second electrode structure 541 and a first signal line 511, which is arranged on the same layer as the first electrode structure 341.

[0209] Part of the third active layer 333 can be connected to the plate 340 via the contact hole. Another part of the third active layer 333 can be connected to the second extension 348.

[0210] A second insulating layer 402, a fifth signal line 345, the first extension 346, the second extension 348, the plate 340, the first electrode structure 341 and the second electrode structure 541 can be arranged on the substrate on which the first to third active layer 331, 332, 333 and the repair structure 381 are arranged.

[0211] A third insulating layer 403 with a first hole H1 and a bank 390 can be arranged successively on the substrate 300, on which the fifth signal line 345, the first extension 346, the second extension 348, the plate 340, the first electrode structure 341 and the second electrode structure 541 are arranged.

[0212] As in Fig. As illustrated in Figure 5, Bank 390 does not overlap at least one end of the first active layer 331, which is located in emission ranges EA1, EA2, EA3 and EA4.

[0213] In other words, as in Fig. As illustrated in Figure 6, an opening of bank 390 can overlap at least one side surface of the first active layer 331.

[0214] An organic layer 497 and a second electrode 498 can be arranged sequentially on the upper surface and the side surfaces of the bank 390 and in the opening of the bank 390.

[0215] As from the Fig. 5 and Fig. As can be seen in section 6, at least part of the opening of Bank 390 can correspond to the emission areas EA1, EA2, EA3 and EA4.

[0216] As mentioned above, the opening of the bank 390 can overlap at least one side surface of the first active layer 331. Therefore, the bank 390 can cover a smaller area of ​​the upper surface of the first active layer 331, which serves as the first electrode of an organic light-emitting element (OLED), thereby increasing the area of ​​each of the emission regions EA1, EA2, EA3, and EA4.

[0217] As referring to the Fig. 3 to Fig. As described in section 6, the color filters can be arranged not only in the emission regions EA1, EA2, EA3 and EA4, but also in a non-emission region NEA in the organic light-emitting display device according to embodiments of the disclosure, so that it may be possible to improve visibility by absorption of external light or of light from translucent components within a panel.

[0218] This will be discussed below with reference to the Fig. 7 and Fig. 8 described in more detail.

[0219] Fig. 7 is a top view showing color filters that are in the structure in Fig. 5 are arranged. Fig. Figure 8 is a schematic view of a cross-section along the line MN in Fig. 7.

[0220] In the following description, a feature, effect, etc., that was described in the embodiments mentioned above will not be repeated. Furthermore, the same reference numeral may be used if a feature described above is described again in the following description.

[0221] Referring to the Fig. 7 and Fig. 8 a first color filter 317 can be arranged in a first subpixel SP1 to overlap a first emission area EA1, a second color filter 318 can be arranged in a third subpixel SP3 to overlap a third emission area EA3, and a third color filter 319 can be arranged in a fourth subpixel SP4 to overlap a fourth emission area EA4.

[0222] No color filter is arranged in a second emission area EA2.

[0223] Each of the first to fourth signal lines 511, 512, 513 and 514 and a circuit area located in a non-emission area NEA can overlap at least two color filters of different colors.

[0224] As in Fig. As illustrated in Figure 7, the first to fourth signal lines 511, 512, 513 and 514 can overlap with the red first color filter 317 and the blue second color filter 318, which is arranged on the first color filter 317, or with the first color filter 317 and the green third color filter 319, which is arranged on the first color filter 317.

[0225] For example, the first and second signal lines 511 and 512 can overlap with the first and second color filters 317 and 318, and the third and fourth signal lines 513 and 514 can overlap with the first and third color filters 317 and 319. Furthermore, the circuit area of ​​each of the subpixels SP1, SP2, SP3, and SP4 can overlap with the first and second color filters 317 and 318.

[0226] The color filters, which overlap different colors, can absorb light.

[0227] Therefore, when light is emitted from an organic light-emitting element (OLED) towards a substrate 300, the absorption of the light and its subsequent transmission to another subpixel can be prevented if the light reaches an area where the first and second color filters 317 and 318 or the first and third color filters 317 and 319, which are arranged on the substrate, are stacked.

[0228] Accordingly, it can be prevented that light losses occur because the light reaches a different subpixel that emits a different color.

[0229] As in the Fig. 5 and Fig. As described in section 6, a bank 390 can be arranged such that some of the electrodes or signal lines located in the non-emission area (NEA) are exposed. As described in Fig. As illustrated in Figure 8, bank 390, for example, cannot overlap part of an initial extension 346.

[0230] This means that an opening of the bank 390 can be arranged to overlap the section of the first extension 346, so that an area in which the bank 390 covers a first active layer 331, which serves as the first electrode of the organic light-emitting element OLED, can be minimized or reduced in order to enlarge the emission areas.

[0231] The structures in the Fig. 5 and the Fig. Six were taken as examples to illustrate the structures in the Fig. 7 and Fig. 8 to describe where the first to third color filters 317, 318 and 319 are arranged in the emission ranges EA1, EA2, EA3 and EA4 and the non-emission range NEA, but the first to third color filters 317, 318 and 319 in the Fig. 7 and the Fig. 8 can also be applied to the structures in the Fig. 3 and Fig. 4 can be applied.

[0232] The steps for manufacturing an organic light-emitting display device according to the embodiments of the disclosure are described below with reference to the Fig. 9 to Fig. 12 briefly explained.

[0233] Fig. 9 to Fig. Figure 12 are schematic views showing the steps for manufacturing the organic light-emitting display device according to the embodiments of the disclosure.

[0234] In the following description, a feature, effect, etc., that was described in the embodiments mentioned above will not be repeated. Furthermore, the same reference numeral may be used if a feature described above is described again in the following description.

[0235] For the sake of simplicity, it is assumed that the organic light-emitting display device, which refers to the Fig. 9 to Fig. As described in section 12, the structures of Fig. 7 and Fig. 8.

[0236] Referring to Fig. 9 The organic light-emitting display device according to embodiments of the disclosure may have a first section 950 and a second section 1050.

[0237] The first section 950 can have a first support substrate 900, a first sacrificial layer 901 arranged on the first support substrate 900, and a buffer layer 902 arranged on the first sacrificial layer 901.

[0238] A light-blocking layer 515 and a plurality of signal lines with a first signal line 511 can be arranged on the buffer layer 902.

[0239] A fourth insulating layer 604 can be arranged on the light-blocking layer 515 and the first signal line 511.

[0240] A variety of active layers 331 and 332 can be arranged on the fourth insulating layer 604.

[0241] A second insulating layer 402 can be arranged on the plurality of active layers 331 and 332.

[0242] A plate 340 and an electrode structure 341 can be arranged on the second insulating layer 402 and a pad electrode 495 can be arranged in a pad area PAD.

[0243] A third insulating layer 403 can be arranged on the plate 340 and the electrode structure 341, and a bank 390 can be arranged on the third insulating layer 403.

[0244] An organic layer 497 and a second electrode 498 can be arranged on the bench 390 and part of an upper surface of a first active layer 331.

[0245] An encapsulation layer 903 can be arranged on the second electrode 498.

[0246] Although Fig. 9 shows a structure in which the encapsulation layer 903 is formed as a single layer, the structure of the organic light-emitting display device according to the embodiments of the disclosure is not limited thereto and can be a multilayer structure in which an inorganic film and an organic film are arranged alternately.

[0247] A second sacrificial layer 904 and a second carrier substrate 905 can be arranged successively on the encapsulation layer 903.

[0248] As in Fig. As illustrated in Figure 10, the second section 1050 can have a plurality of color filters 317 and 318 arranged on a substrate 300 and a first insulating layer 401 arranged on the plurality of color filters 317 and 318.

[0249] As in the Fig. 11 and Fig.As shown in Figure 12, the first support substrate 900 and the first sacrificial layer 901 of the first section 950 can then be removed and an upper surface of the first insulating layer 401 of the second section 1050 can be attached to a surface of the buffer layer 902.

[0250] After the first insulating layer 401 and the buffer layer 902 have been joined together, an encapsulation substrate 1205 can be placed on the encapsulation layer 903. The encapsulation substrate 1205 can be attached to the encapsulation layer 903 by means of an adhesive layer 1204.

[0251] The adhesive layer 1204 may contain a moisture-absorbing component.

[0252] According to the embodiments of the disclosure, the organic light-emitting display device and the organic light-emitting display panel can be provided wherein at least one of the multiple active layers arranged in the circuit area extends to the emission area, so that the active layer serves as the anode electrode of the organic light-emitting element and the plurality of active layers are arranged on the same layer as the plurality of signal lines, thereby simplifying the process.

[0253] According to the embodiments of the disclosure, the organic light-emitting display device and the organic light-emitting display panel can be provided, wherein the bank is arranged such that it exposes at least the section of the side surface of the anode electrode of the organic light-emitting element, thereby improving the aperture ratio. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] KR 1020210192617

[0001]

Claims

[1] Organic light-emitting display device (100) comprising: a substrate (300); an emission area (EA1) on the substrate (300); a non-emission area (NEA) next to the Emission area (EA1) on the substrate (300); a plurality of color filters (317, 318) arranged on the substrate (300), wherein a first color filter (317) of the plurality of color filters (317, 318) overlaps the emission region (EA1) and a second color filter (318) of the plurality of color filters (317, 318) overlaps the non-emission region (NEA); a first insulating layer (401) arranged on the plurality of color filters (317, 318); a first active layer (331) arranged on the first insulating layer (401); a gate electrode located on an upper surface of the first active layer (331); a second insulating layer (402) which is arranged on top of the first active layer (331) and the gate electrode; a hole in the second insulating layer (402) that exposes a section of the upper surface of the first active layer (331); a bench (390) which is arranged on the second insulating layer (402); an opening in the bank (390) that overlaps the hole; an organic layer (497) arranged on the section of the upper surface of the first active layer (331) and on the bench (390); and a cathode electrode arranged on the organic layer (497). [2] Organic light-emitting display device (100) according to claim 1, wherein the first color filter (317) is a single layer and the second color filter (318) has multiple layers, the multiple layers comprising a stack of layers, the layers corresponding to different colors. [3] Organic light-emitting display device (100) according to claim 1 or 2, which further comprises a plurality of signal lines (311, 312, 313, 314, 511, 512, 513, 514), wherein the second color filter (318) overlaps a circuit area and the plurality of signal lines (311, 312, 313, 314, 511, 512, 513, 514). [4] Organic light-emitting display device (100) according to claim 1 or 2, further comprising: a plurality of signal lines (311, 312, 313, 314) arranged in the non-emission area (NEA), extending in a substantially vertical direction and spaced apart from each other, wherein the signal lines (311, 312, 313, 314, 511, 512, 513, 514) are arranged on the same layer as the first active layer (331) and have the same material as the first active layer (331). [5] Organic light-emitting display device (100) according to claim 4, wherein the plurality of signal lines (311, 312, 313, 314, 511, 512, 513, 514) comprise a first active structure (411a) with a transparent conductive material and a second active structure (411b) arranged on the first active structure (411a) and comprising a metallic material. [6] Organic light-emitting display device (100) according to any one of claims 1 to 5, wherein the first active layer (331) comprises: a first active structure (431a) comprising a transparent conductive material; and a second active structure (431b) which is arranged on part of an upper surface of the first active structure (431a) and comprises a metallic material. [7] Organic light-emitting display device (100) according to claim 6, wherein the second active structure (431b) is not arranged in a region that overlaps the gate electrode and is not arranged in a region that overlaps the opening of the bank (390). [8] Organic light-emitting display device (100) according to claim 7, wherein the first active structure (431a) located in the area overlapping the opening of the bank (390) is in a conductive state and the first active structure (431a) located in the area overlapping the gate electrode is in a non-conductive state. [9] Organic light-emitting display device (100) according to any one of claims 1 to 8, further comprising: a second active layer (332) that is spaced apart from the first active layer (331); and a plate (340) arranged on the second active layer (332); the second active layer (332) has: a first active structure (432a) with a transparent conductive material; and a second active structure (432b) arranged on top of the first active structure (432a) of the second active layer (332) and comprising a metallic material, in an area overlapping the plate (340). [10] Organic light-emitting display device (100) according to claim 9, wherein the plate (340) and the second active structure (432b) of the second active layer (332) are electrodes of a storage capacitor (Cst). [11] Organic light-emitting display device (100) according to claim 9 or 10, further comprising a light-blocking layer (515) comprising a metallic material and arranged between the first insulating layer (401) and the first active layer (331). [12] Organic light-emitting display device (100) according to claim 11, wherein the light-blocking layer (515) is arranged in the non-emission area (NEA) and the light-blocking layer (515) overlaps a section of the first active layer (331) and a section each of the second active layer (332) and a third active layer (333), which are spaced apart from the first active layer (331). [13] Organic light-emitting display device (100) according to claim 12, wherein the first and second active structures (432a, 432b) of the second active layer (332) are arranged in an area that overlaps the light-blocking layer (515). [14] Organic light-emitting display device (100) according to claim 13, wherein the second active layer (332) and the plate (340) are the electrodes of a storage capacitor (Cst). [15] Organic light-emitting display device (100) according to any one of claims 12 to 14, which further comprises a plurality of signal lines (311, 312, 313, 314, 511, 512, 513, 514) arranged in the non-emission area (NEA), extending in a vertical direction, and spaced apart from each other, wherein the plurality of signal lines (311, 312, 313, 314, 511, 512, 513, 514) are arranged on the same layer as the light-blocking layer (515) and comprise the same material as the light-blocking layer (515). [16] Organic light-emitting display device (100) according to any one of claims 1 to 15, further comprising a driver transistor (T1) comprising the first active layer (331) and the gate electrode. [17] Organic light-emitting display panel (100) comprising: a substrate (300); an emission area (EA1) on the substrate (300); a multitude of color filters (317, 318) arranged on the substrate (300) and overlapping the emission area (EA1); a first insulating layer (401) arranged on the plurality of color filters (317, 318); a first active layer (331) arranged on the first insulating layer (401); a gate electrode located on an upper surface of the first active layer (331); a second insulating layer (402) arranged on top of the first active layer (401) and the gate electrode; a hole in the second insulating layer (402) that exposes part of the upper surface of the first active layer (401); a bench (390) which is arranged on the second insulating layer (402); an opening in the bank (390) that overlaps the hole; an organic layer (497) arranged on the section of the upper surface of the first active layer (331) and on the bench (390); and a cathode electrode arranged on the organic layer (497). [18] Display panel, comprising: a substrate (300); an emission area (EA1) on the substrate (300); a non-emission area (NEA) adjacent to the emission area (EA1); a multitude of color filters (317, 318) arranged on the substrate (300) and overlapping the emission area (EA1); a first insulating layer (401) arranged on the plurality of color filters (317, 318); a first active layer (331) extending continuously from the emission area (EA1) to the non-emission area (NEA); a driver transistor (T1) with: a channel area (331a) of the first active layer (331) in the non-emission area (NEA); a gate electrode that overlaps the channel region (331a); and a second insulating layer (402) between the gate- electrode and the channel area (331); and a light-emitting element (OLED) with: a first electrode in the first active layer (331) in the emission region (EA1); an organic layer (497) on the first electrode; and a second electrode (498) on the organic layer (497) . [19] Display panel according to claim 18, further comprising: a second active layer (332) on the same layer as the first active layer (331) and spaced apart from the first active layer (331); and comprising a storage capacitor (Cst): a first electrode in the second active layer; a second electrode that overlaps the first electrode; and an insulating layer between the first electrode and the second electrode. [20] Display panel according to claim 18 or 19, further comprising: a third insulating layer (403) on the gate electrode and the first active layer (401); and a bench (390) on the third insulating layer (403); wherein the organic layer (497) is located on side walls of the third insulating layer (403) and the bench (390).

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