Multi-resistor sensor system with a sensor evaluation circuit with few resistor connections

Abstract

Sensor system (SSYS), wherein the sensor system (SSYS) comprises a sensor evaluation circuit (IC), in particular a micro-integrated sensor evaluation circuit (IC), and wherein the sensor system comprises one or more sensors (SENS), and wherein the one or more sensors (SENS) of the sensor system comprise measuring resistors, and wherein, for the clarity of this claim, permanently parallel-connected measuring resistors are considered a single measuring resistor, and wherein the one or more sensors (SENS) of the sensor system comprise a number of n such measuring resistors (Rl1 to Rl and Rq1,2 to Rq(m-1),m), and wherein n is a positive integer greater than two, and wherein the sensor evaluation circuit (IC) is housed in a package with m measuring resistor connections (P1 to Pm), and wherein m is a positive integer greater than one and less than n, and wherein the sensor evaluation circuit (IC) comprises m current sources (CS1 to CSm), and wherein the sensor evaluation circuit (IC) is a controllablea switching matrix (SM) and wherein the sensor evaluation circuit (IC) comprises m internal nodes (iN1 to iNm) (relative to the sensor evaluation circuit (IC)) and wherein the sensor system (SSYS) comprises m external nodes (eN1 to eNm) (relative to the sensor evaluation circuit (IC)) and wherein each measuring resistor terminal of the m measuring resistor terminals (P1 to Pm) is electrically connected to exactly one external node of these m external nodes (eN1 to eNm) and wherein at each external node of the m external nodes (eN1 to eNm) exactly one respective measuring resistor of the n measuring resistors (Rl1 to Rl and Rq1,2 to Rq(m-1),m) is electrically connected to this respective external node of the m external nodes (eN1 to eNm) by means of the respective first terminal of this respective measuring resistor and is electrically connected to a reference potential node (GND) by means of the respective second terminal of this respective measuring resistor, wherein the following text this mMeasuring resistors are designated as longitudinal resistors (Rl1 to Rlm), and wherein the nm=k remaining measuring resistors of the n measuring resistors (Rl1 to Rl and Rq1,2 to Rq(m-1),m), with k as a positive integer with 1≤nm, as k transverse resistors (Rq1,2 to Rq(m-1),m) are electrically inserted between a respective pair consisting of a first external node (eNi with 1≤i≤m) of the m external nodes (eN1 to eNm) and a second external node (eNj with 1≤j≤m and i≠j), such that the respective first terminal of the respective transverse resistor of the transverse resistors (Rq1,2 to Rq(m-1),m) is electrically connected to the respective first external node (eNi) of this respective pair, and such that the respective second terminal of the respective transverse resistor of the transverse resistors (Rq1,2 to Rq(m-1),m) is electrically connected to the respective second external node (eNj) of this respective pair, where the m current sources (CS1 to CSm) provide a respective measuring current of m respective measuring currents(I1 to Im) feeds into the respective internal nodes of the m internal nodes (iN1 to iNm), provided that the switching state of the controllable switching matrix (SM) allows an outflow of this respective measuring current of the m respective measuring currents (I1 to Im), and wherein the controllable switching matrix (SM) is configured to receive control signals, and wherein the controllable switching matrix (SM) is configured, depending on the received control signal, to electrically connect one or more first external nodes of the m external nodes (eN1 to eNm) to exactly one internal node of the m internal nodes (iN1 to iNm) belonging to each external node of the m external nodes (eN1 to eNm), or, depending on the received control signal, to connect one or more second external nodes of the m external nodes (eN1 to eNm) to exactly one external node of each second external node belonging to each external node of the m external nodes (iN1 to iNm).to electrically disconnect the respective internal nodes of the m external nodes (eN1 to eNm) belonging to the m external nodes (eN1 to eNm), and wherein the controllable switching matrix (SM) is configured to: - depending on the received control signal, electrically connect one or more second external nodes of the m external nodes (eN1 to eNm) to exactly one further respective second external node of the m external nodes (eN1 to eNm), or - depending on the received control signal, electrically disconnect one or more further second external nodes of the m external nodes (eN1 to eNm) to exactly one further respective second external node of the m external nodes (eN1 to eNm).

Description

Field of invention

[0001] The invention relates to a multi-resistor sensor system with a sensor evaluation circuit for a resistor network with measuring resistors and few measuring resistor connections. General Introduction

[0002] Multi-resistor sensor systems in automotive systems very often need to detect external physical parameters, such as the temperature of the environment or of relevant devices in the automobile.

[0003] Typically, one or more sensors convert the physical parameter(s) into one or more electrical measured values ​​and / or signals. For example, NTC resistors and / or PTC resistors, which convert a temperature change into a change in resistance, are suitable for converting temperatures into such measured values ​​and / or signals. A micro-integrated evaluation circuit (IC) detects the changes in the physical parameters using these measured values ​​and / or signals. In the prior art, a dedicated measuring resistor connection on the housing of the micro-integrated evaluation circuit is required for each physical parameter to be detected by a resistive sensor element. Current applications of multi-measuring resistor sensor systems therefore use one measuring resistor connection per sensor or measuring resistor. Some typical automotive applications typically use at least five sensors.For example, this could involve five NTC resistors. This means that five resistor connections on the application device need to be measured by the multi-resistor sensor system. A front lighting application in an automobile typically has the light functions DRL, TURN, HB, LB, and POSITION. The LEDs for these functions must be thermally controlled; that is, the respective temperature must preferably be detected using resistive sensor elements such as NTC and / or PTC resistors. In the preceding example, this means that five dedicated resistor connections are required for temperature detection. This increases the system cost for the micro-integrated sensor evaluation circuit. Task

[0004] The proposal aims to create a solution where the same number of resistive sensor elements can be measured with a smaller number of measuring resistor connections, in order to ultimately effectively capture more than one physical parameter per measuring resistor connection.

[0005] The technical teachings of the independent claims each solve this problem. Further embodiments may be the subject of dependent claims. Solution to the task

[0006] In a multi-resistor sensor system with a sensor evaluation circuit featuring resistor connections of the type described above, the problem is solved as follows: Current sources do not directly energize the more complex resistor network (RN) of measuring resistors, and an analog-to-digital converter does not measure this resistor network. Instead, a switching matrix is ​​connected between the current sources and the resistor network. The switching matrix changes the current and the structure of the resistor network (RN) in several measurement steps of one or more measurement cycles. From the obtained measurements, the sensor system then determines the resistance values ​​of the measuring resistors. Such a sensor system requires only one sensor evaluation circuit (IC) with a smaller number of resistor connections and thus solves the problem.The details of the proposed device are further described and disclosed in the following description and the figure description.

[0007] The proposal adds intelligence to the prior art solution by using internal switches of the switching matrix to measure n resistances of n sensors in the resistor network with only m resistor connections. Here, m and n are positive integers, and m is less than n and greater than 1.

[0008] RNTC-1 & RLNR-1, in parallel, form a sensor and are represented as R1 in the figure.

[0009] The core of the invention can be most easily explained by means of the Fig. Understanding numbers 0 to 19 and their descriptions is essential, which is why more detailed and general explanations are omitted here.

[0010] The sensor system can modify the switching network to simplify calculations within a measurement cycle for different measurements of the resistance network in different measurement steps. The following figures illustrate various implementation possibilities. The scheme can be extended with additional current sources, measuring resistor connections, and switches in the switching network to add further measuring resistors for each additional measuring resistor connection beyond three measuring resistors.

[0011] Each equation, corresponding to exactly one state of the switching matrix, specifies how the resistance values ​​result in a total resistance specific to that switching state. These equations differ from one another depending on the switching state of the switching matrix. Several different equations form a system of equations. This system of equations allows the sensor system to calculate the specific current resistance values ​​of the measuring resistors from these equations using a computer-implemented and / or machine-implemented method, provided the sensor system knows a plurality of current values ​​for the currents applied to the measuring resistors by current sources within the sensor system for a plurality of corresponding switching states of the switching matrix, and provided the sensor system knows the voltage drops across the resistor network resulting from these current applications.

[0012] This document proposes a sensor system SSYS, in which the sensor system SSYS comprises a sensor evaluation circuit IC, in particular a micro-integrated sensor evaluation circuit IC, and one or more sensors SENS. The one or more sensors SENS of the sensor system SSYS typically comprise several measuring resistors. For the sake of clarity, in this document, permanently parallel-connected measuring resistors are each considered a single measuring resistor. The one or more sensors SENS of the sensor system comprise a number n of such measuring resistors (R). l1 to R lm and R q1,2 to R q(m-1),m ). Here, n is a positive integer greater than two. The sensor evaluation circuit IC is preferably housed in a package with m measuring resistor connections (P1 to P1). m) accommodated. Here, m is a positive integer greater than one and less than n. The sensor evaluation circuit IC comprises m current sources (CS1 to CS1). m The sensor evaluation circuit (IC) further comprises a controllable switching matrix (SM). The sensor evaluation circuit IC typically has m internal nodes (iN1 to iN1). m ) with respect to the sensor evaluation circuit (IC). The SSYS sensor system also typically has m external nodes (eN1 to eN1). m ) related to the sensor evaluation circuit IC. Each measuring resistor connection of the m measuring resistor connections (P1 to P m ) is each with exactly one external node of these m external nodes (eN1 to eN1). m ) electrically connected. At each external node of the m external nodes (eN1 to eN1) m ) is exactly one of the n measuring resistors (R) l1 to R lm and R q1,2 to R q(m-1),m) with this respective external node of the m external nodes (eN1 to eN m ) connected. This respective electrical connection is made via the respective first terminal of this respective measuring resistor. The respective second terminal of this respective measuring resistor is connected to n measuring resistors (R). l1 to R lm and R q1,2 to R q(m-1),m ) is electrically connected to a reference potential node (GND). The following text refers to these m measuring resistors as series resistances (R). l1 to R lm ).

[0013] The nm=k remaining measuring resistances of the n measuring resistances (R l1 to R lm and R q1,2 to R q(m-1),m ), with k as a positive integer with 1≤nm, are k transverse resistances (Rq ). 1,2 to R q(m-1),m ) each between a respective pair from a first external node (eN i with 1≤i≤m) of the m external nodes (eN1 to eN m) and a second external node (eN j with 1≤j≤m and i≠j) each electrically inserted. This means that the respective first connection of the respective transverse resistor of the transverse resistors (R) is q1,2 to R q(m-1),m ) with the respective first external node (eN i ) of each pair are electrically connected. Furthermore, this connects the respective second terminal of the respective transverse resistor (R) of the transverse resistors. q1,2 to R q(m-1),m ) with the respective second external node (eN j ) of this respective pair electrically connected.

[0014] The m power sources (CS1 to CS m ) each feed a respective measuring current of the m respective measuring currents (I1 to I) m ) in the respective internal nodes of the m internal nodes (iN1 to iN m) only if the switching state of the controllable switching matrix (SM) allows a flow of this respective measuring current of the m respective measuring currents (I1 to I) m If permitted, this feed-in occurs in each case. The controllable switching matrix (SM) is typically configured to receive control signals.

[0015] The controllable switching matrix (SM) connects one or more first external nodes of the m external nodes (eN1 to eN) according to the received control signal. m ) each first external node of these first external nodes with exactly one exactly corresponding external node of the m external nodes (eN1 to eN) m ) associated respective internal nodes of the m internal nodes (iN1 to iN m ) electrical.

[0016] The controllable switching matrix (SM) separates one or more first external nodes of the m external nodes (eN1 to eN1) according to the received control signal. m) each first external node of these first external nodes of exactly one exactly the respective external node of the m external nodes (eN1 to eN m ) associated respective internal nodes of the m internal nodes (iN1 to iN m ) electrical.

[0017] The controllable switching matrix (SM) connects one or more second external nodes of the m external nodes (eN1 to eN) according to the received control signal. m ) each second external node of these second external nodes with exactly one further respective second external node of the m external nodes (eN1 to eN) m ) electrical.

[0018] The controllable switching matrix (SM) separates one or more further second external nodes of the m external nodes (eN1 to eN) according to the received control signal. m) each second external node of these second external nodes of each exactly one further respective second external node of the m external nodes (eN1 to eN m ) electrical.

[0019] In another variant of the sensor system (SSYS), the controllable switching matrix (SM) connects one or more further second external nodes of the m external nodes (eN1 to eN) depending on the received control signal. m ) each second external node of these second external nodes electrically with one or the reference potential node (GND).

[0020] In another variant of the sensor system (SSYS), the controllable switching matrix (SM) separates one or more second external nodes of the m external nodes (eN1 to eN) depending on the received control signal. m ) each second external node of these second external nodes electrically from one or the reference potential node (GND).

[0021] In another variant of the sensor system (SSYS), the sensor system (SSYS) comprises n measuring resistors (R). l1 to R lm and R q1,2 to R q(m-1),m ), where n is a positive integer greater than two, and a sensor evaluation circuit (IC) with m connections, where m is a positive integer less than n. The n measuring resistors (R) are preferably l1 to R lm and R q1,2 to R q(m-1),m ) in a resistor network with m terminals plus one terminal for a reference potential node (GMND). Preferably, the sensor evaluation circuit (IC) is configured to determine the respective resistance value of each of the n measuring resistors (R). l1 to R lm and R q1,2 to R q(m-1),m ) in particular by means of a computer-implemented procedure.

[0022] In another variant of the sensor system (SSYS), the sensor system (SSYS) detects a contact resistance fault of one or more measuring resistor connections of the measuring resistor connections (P1 to P1). m ) of the sensor system (SSYS). This has the advantage that the sensor system can handle these errors and thus achieves a fail-safe level of fault robustness. This is particularly important in safety-critical applications. 5 In another variant of the sensor system (SSYS), the sensor system (SSYS) is configured to detect a measurement resistance error of one or more of the n measurement resistors (R). l1 to R lm and R q1,2 to R q(m-1),m ) to detect these errors. This has the advantage that these errors can be identified, thus achieving a fail-safe level of fault robustness. This is particularly important in safety-critical applications.

[0023] In another variant of the sensor system (SSYS), the sensor system (SSYS) is configured, in the event of a contact resistance fault and / or a measuring resistance fault, to modify the computer-implemented and / or machine-implemented calculation of the measuring resistance values ​​and / or the current supply to the resistor network (RN) and / or the selection of the switching states used in the switching matrix (SM) in such a way that the detected contact resistance fault and / or the detected measuring resistance fault has no effect or at least a reduced effect on the functionality of the sensor system (SSYS) and / or on the measurement of the other contact resistances and / or on the measurement of the other measuring resistances of the n measuring resistors (R). l1 to R lm and R q1,2 to R q(m-1),mThis has the advantage that errors can be compensated for, thus achieving a fail-operational level of fault robustness. This is particularly important in safety-critical applications.

[0024] In another variant of the sensor system (SSYS), the sensor system (SSYS) is configured to compare measured resistance values ​​with permissible resistance value ranges, and / or the sensor system is configured to compare measured contact resistance values ​​with permissible contact resistance value ranges, particularly using computer-implemented and / or machine-implemented methods. These are examples of computer-implemented and / or machine-implemented methods for detecting the aforementioned errors.

[0025] In another variant of the sensor system (SSYS), one or more vectorial limit values ​​define one or more vectorial measurement resistance ranges and / or one or more vectorial contact resistance ranges and / or one or more limit values. During the development of the proposal, it was recognized that it is advantageous for one or more limit values ​​and / or one or more vectorial limit values ​​to depend on one or more measurement resistance values ​​and / or one or more contact resistance values. It is then possible, for example, for the sensor system (SSYS) to operate one or more resistive temperature sensors in the resistor network (RN). Such temperature sensors could, for example, include NTC or PTC resistors.Furthermore, the sensor system or the computer core (µC) can perform temperature compensation of one or more measuring resistors and / or one or more contact resistors depending on the measuring resistance value or depending on the resistance values ​​of this one or more resistive temperature sensors.

[0026] In another variant of the sensor system (SSYS), the sensor system (SSYS) is configured to execute one or more measurement cycles (800) with one or more measurement steps (700) and to set a switching state of the switching matrix (SM) in each measurement step (700) of a measurement cycle (800). This results in a temporal sequence of switching states of the switching matrix (SM) as the switching matrix state sequence of a measurement cycle (800). This switching matrix state sequence depends on one or more determined measured resistance values ​​and / or one or more contact resistance values ​​and / or a detected contact resistance error and / or a detected measured resistance error.

[0027] This enables the described fail-operational characteristic, which is important for safety-relevant applications.

[0028] In another variant of the sensor system (SSYS), the sensor system (SSYS) regulates the measuring currents. Then the current value of at least one of the m measuring currents (I1 to I) depends on m ) the associated at least one power source of the m power sources (CS1 to CS m ) at least temporarily depending on the following parameters: a) From the voltage difference between the associated potential of the associated measuring resistor terminal of the m measuring resistor terminals (P1 to P m ) of the housing of the sensor evaluation circuit IC; b) From a different potential of another measuring resistor terminal of the m measuring resistor terminals (P1 to P1) m ) of the housing of the sensor evaluation circuit IC.

[0029] This allows for the saving of the corresponding cross switch of the nm cross switches (S q1,2 to S q(m-1),m Preferably, a measuring device detects the voltage difference between a) the associated potential of the associated measuring resistor terminal of the m measuring resistor terminals (P1 to P m ) of the housing of the sensor evaluation circuit IC and b) a different potential of another measuring resistor terminal of the m measuring resistor terminals (P1 to P m ) of the housing of the sensor evaluation circuit IC.

[0030] The measuring device can, for example, be a differential amplifier op-amp. 1,2 the potentially k=nm differential amplifier (OP) 1,2 until surgery (m-1).m ) the sensor evaluation circuit IC.

[0031] This differential amplifier op-amp 1,2 the potentially k=nm differential amplifier (OP) 1,2 until surgery (m-1).m The sensor evaluation circuit IC then preferably generates an associated current source control signal of the potentially nm current source control signals (RS). 1,2 to RS (m-1),mIt is conceivable to use a differential amplifier (OP) instead of a differential amplifier (potentially k=nm). 1,2 until surgery (m-1).m ) the sensor evaluation circuit IC several, in extreme case k=nm differential amplifiers (OP) 1,2 until surgery (m- 1).m ) to be provided as device components of the sensor evaluation circuit IC.

[0032] Preferably, the sensor evaluation circuit includes ICs for one or more, better all m, current sources (CS1 to CS1). m ) a device component. This device component preferably receives the output signals of the nm differential amplifiers (op-amps). 1,2 until surgery (m-1).m )assigned. The output signals are the respective nm-1 current source control signals (RS). 1,2 to RS (m-1),m These are current source control signals (RS) for nm-1. 1,2 to RS (m-1),m ) are each exactly one of the mm-1 power sources (CS2 to CS2) (m-1),m). Typically, one of the current sources, here the first current source CS1 as an example, serves as a reference for the other current sources of the nm-1 (CS2 to CS1). (m-1),m In the event of a fault in the area of ​​the first current source CS1, the computer core µC of the sensor system SSYS would switch to another current source from among the n-m-1 other current sources (CS2 to CS1). (m-1),m ) as an unregulated current source. In the event of a fault in the area of ​​the first current source CS1, the computer core µC of the sensor system SSYS would then only select the n - m - 2 other current sources (CS3 to CS). (m-1),m ) and, if necessary - where appropriate - regulate the previously unregulated first power source CS1.

[0033] Preferably, the sensor evaluation circuit IC of the sensor system SSYS comprises a current source regulator that measures one or more, preferably nm, voltage differences of the (m-1)*m voltage values ​​of the voltages between one or more mutually distinct pairs of measuring resistor connections of the m measuring resistor connections (P1 to P1). m ) detected and, depending on the detected voltage values, one or more current sources of the m current sources (CS1 to CS2) are controlled by means of one or m control signals of m possible control signals (RS1 to RS1). m ) regulates. The one or more control signals of the potentially m control signal (RS1 to RS) are used. m ) preferably exactly one of the m current sources (CS1 to CS1) m ) assigned and regulate the respective measuring current of the m measuring currents (I1 to I m ), which this respective power source of the m power sources (CS1 to CS m) regulates. Preferably, a control path from a detected voltage value to the corresponding control signal has the characteristic of a PL controller or the characteristic of a PID controller.

[0034] The document presented here proposes a suitable sensor evaluation circuit (IC) for measuring n measuring resistances (R) for the sensor system (SSYS) described above. l1 to R lm and R q1,2 to R q(m-1),m A resistor network (RN) with n as a positive integer greater than two is present within a sensor system (SSYS). This can be, in particular, a sensor system as described previously. The sensor evaluation circuit (IC) comprises m connections (P1 to P1). m ) for m measuring resistors of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m), with m being a positive integer less than n. Preferably, the sensor evaluation circuit (IC) is configured to determine the respective resistance value of one or more of the n measuring resistors (R) in the resistor network (RN). l1 to R lm and R q1,2 to R q(m-1),m ) in particular using computer- and / or machine-implemented methods, if the n measuring resistances (R l1 to R lm and R q1,2 to R q(m-1),m ) in the resistor network (RN) with m terminals plus one terminal for a reference potential node (GND) and if these m terminals of the resistor network (RN) are connected to the m terminals (P1 to P m ) which are connected to the sensor evaluation circuit (IC).

[0035] One or more computer cores (µC) of the sensor system (SSYS) preferably execute program code when performing one or more computer-implemented and / or machine-implemented methods mentioned in this document. The program data, including the program instructions, is preferably stored at least temporarily in one or more memory locations of the sensor system (SSYS). For the execution of this program code, one or more computer cores (µC) of the sensor system (SSYS) typically access this program code, including the program data and program instructions, via one or more data buses (DB) of the sensor system (SSYS) via one or more data buses (DB).

[0036] The document presented here proposes a preferably computer- and / or machine-implemented method (600) for measuring the n measuring resistances (R) l1 to Rlm and R q1,2 to R q(m-1),m ) of a sensor system (SSYS), as described above, and / or for measuring the n measuring resistances (R l1 to R lm and R q1,2 to R q(m-1),m ) of a sensor system (SSYS) using a sensor evaluation circuit (IC), as described above, to determine n respective measured values ​​of n measuring resistors (R) l1 to R lm and R q1,2 to R q(m-1),m ). Preferably, the method (600) performs, for example, the steps • Performing one or more measurement cycles (800) with a respective plurality of measurement steps (700) per measurement cycle (800), wherein in each measurement step of these measurement steps (700) of a measurement cycle (800) of these measurement cycles a respective measurement step procedure (700) each the sub-procedure steps (620 to 680) a) to g) with • Setting (620) a switching state of one or the switching matrix (SM) and / or the sensor evaluation circuit (IC) that differs from all switching states of all measurement steps (400) of this measurement cycle of these measurement cycles (620 to 800), and • Feeding in (630) at least one of the respective measuring currents (I1 to I) that differs in magnitude from 0A m ) in at least one of the m internal nodes (iN1 to iN1) that is exclusively associated with this respective measuring current m ), in particular by at least one current source of the current sources (CS1 to CS1) that is exclusively associated with each respective measuring current m ), • Forwarding (640) at least one of the respective measuring currents (I1 to I) m ) from this at least one internal node of the internal nodes (iN1 to iN) that belongs exclusively to exactly this respective measuring current m) into exactly one external node of the external nodes (eN1 to eN m ), • Switching state-dependent connection (650) of the other external nodes of the external nodes (eN1 to eN) m ), into which no measuring current of the measuring currents (I1 to I) m ) is fed in with a different magnitude than 0A, with the reference potential node (GND) or disconnecting (650) this other external node of the external nodes (eN1 to eN m ) from the reference potential node (GND) and disconnecting (650) the external nodes of the external nodes (eN1 to eN m ), into which a measuring current of the measuring currents (I1 to I m ) is fed in with a value different from 0A, from the reference potential node (GND), • Feeding (660) at least one respective part of each of the respective measuring currents (I1 to I) other than 0A m ) into exactly one respective longitudinal resistance of the m longitudinal resistances (R l1 to R lm), which is assigned to this respective measuring current and which is between this respective external node of the external nodes (eN1 to eN1) m ) from step c) (640) and a reference potential node (GND) is each switched, • Feeding (670) the respective other part of this respective measuring current of the measuring currents (I1 to I) m ) in exactly those respective transverse resistances of the (nm) transverse resistances (R q1,2 to R q(m-1),m ), which are between exactly this external node of the external nodes (eN1 to eN m ) from step c) (640) and the respective other external nodes of the external nodes (eN1 to eN m ) are each switched on, • Acquiring (680) the respective voltages of these internal nodes of the internal nodes (iN1 to iN) m ) relative to a reference potential node and / or in particular the voltage drop across this current source of current sources (CS1 to CS m) from section b), in particular by measuring instruments (ADC) • from, wherein in each measurement cycle (800) of these measurement cycles at least one respective measurement cycle procedure (800) each includes the sub-procedure steps ◯ Execute (700, 690) the measurement steps (700) with the necessary measurement step-related sub-procedures (620 to 690), ◯ ii) Determining (720) the resistance values ​​of measuring resistors of the measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ) for which steps a) to g) of the sub-procedures (620 to 680) of the measurement steps (700) were carried out, ◯ iii) Output (730) and / or hold and / or signal and / or use determined resistance values ​​of measuring resistors

[0037] A refinement of the procedure includes the additional steps of checking (810) whether a predetermined number of measurement cycles (800) has been performed and, if the predetermined number of measurement cycles (800) has been performed, determining (820) the resistance values ​​of the measuring resistors (R). l1 to R lm and R q1,2 to R q(m-1),m ) from the values ​​already determined several times in step ii) (720) for several measurement cycles and the output (830) and / or provision and / or signaling and / or use of resistance values ​​of measuring resistors determined in this way as a result of a plurality of measurement cycles. Otherwise, the remaining measurement cycles (800) are carried out.

[0038] The document presented here therefore also proposes a sensor system (SSYS) for measuring the n measuring resistances (R). l1 to R lm and R q1,2 to R q(m-1),m) in which the sensor system (SSYS) is configured to implement a computer-implemented and / or machine-implemented method (600) for determining n respective measured values ​​of n measuring resistances (R) l1 to R lm and R q1,2 to R q(m- 1),m ) to execute

[0039] The sensor system (SSYS) is proposed to perform the step of carrying out one or more measurement cycles (800) with a respective plurality of measurement steps (700) per measurement cycle (800) as part of the execution of the computer-implemented and / or machine-implemented method (600).

[0040] The sensor system (SSYS) is preferably configured to perform, within the scope of the execution of the computer-implemented and / or machine-implemented method (600), in each measurement step of these measurement steps (700) of a measurement cycle (800) of these measurement cycles, a respective measurement step method (700) and each of the sub-method steps (620 to 680) a) to g). a) The sensor system (SSYS) is preferably configured to perform, as a substep a) within the execution of the computer-implemented and / or machine-implemented method (600), the setting (620) of a switching state of a switching matrix (SM) and / or the sensor evaluation circuit (IC) which differs from all switching states of all measurement steps (400) of this measurement cycle of these measurement cycles (620 to 800). b) The sensor system (SSYS) is preferably configured to, as part of the execution of the computer-implemented and / or machine-implemented method (600), as substep b) inject (630) at least one respective measuring current of the measuring currents (I1 to I) that differs in magnitude from 0A m ) in at least one of the m internal nodes (iN1 to iN1) that is exclusively associated with this respective measuring current m ), in particular by at least one current source of the current sources (CS1 to CS1) that is exclusively associated with each respective measuring current m ) to execute and c) The sensor system (SSYS) is preferably configured to, as substep c) of the execution of the computer-implemented and / or machine-implemented method (600), forward (640) the at least one respective measuring current of the measuring currents (I1 to I) m) from this at least one internal node of the internal nodes (iN1 to iN) that belongs exclusively to exactly this respective measuring current m ) into exactly one external node of the external nodes (eN1 to eN m to execute. d) The sensor system (SSYS) is preferably configured to perform, as substep d) the switching state-dependent connection (650) of the other external nodes (eN1 to eN1) within the execution of the computer-implemented and / or machine-implemented method (600). m ), into which no measuring current of the measuring currents (I1 to I) m ) is fed in with a value different from 0A, with the reference potential node (GND) or the disconnection (650) of this other external node of the external nodes (eN1 to eN m ) from the reference potential node (GND) and disconnecting (650) the external nodes of the external nodes (eN1 to eN m ), into which a measuring current of the measuring currents (I1 to I m) is fed in with a value different from 0A, to be carried out from the reference potential node (GND). e) The sensor system (SSYS) is preferably configured to, as part of the execution of the computer-implemented and / or machine-implemented method (600), as substep e), inject (660) at least a respective part of each of the respective measuring currents (I1 to I) other than 0A. m ) into exactly one respective longitudinal resistance of the m longitudinal resistances (R l1 to R lm ), which is assigned to this respective measuring current and which is between this respective external node of the external nodes (eN1 to eN1) m ) from step c) (640) and a reference potential node (GND) is each switched to execute. f) The sensor system (SSYS) is preferably configured to perform, as substep f) of the execution of the computer-implemented and / or machine-implemented method (600), the injection (670) of the respective other part of this respective measuring current of the measuring currents (I1 to I) m ) in exactly those respective transverse resistances of the (nm) transverse resistances (Rq 1,2 to R q(m-1),m ), which are between exactly this external node of the external nodes (eN1 to eN m ) from step c) (640) and the respective other external nodes of the external nodes (eN1 to eN m ) are each switched on, to execute. g) The sensor system (SSYS) is preferably configured to perform, as substep g) of the execution of the computer-implemented and / or machine-implemented method (600), the detection (680) of the respective voltages of these internal nodes of the internal nodes (iN1 to iN1). m) relative to a reference potential node and / or in particular the voltage drop across this current source of current sources (CS1 to CS m ) from step b), in particular by means of measuring instruments (ADC).

[0041] The sensor system (SSYS) is preferably configured to perform at least one respective measurement cycle procedure (800) in each of the following sub-process steps during the execution of the computer-implemented and / or machine-implemented method (600): i. The sensor system (SSYS) is preferably configured to perform, as substep i) within the execution of the computer-implemented and / or machine-implemented method (600), the execution (700, 690) of the measurement steps (700) with the necessary measurement-step-related sub-methods (620 to 690). ii. The sensor system (SSYS) is preferably configured to determine (720) the resistance values ​​of measuring resistors (R) as a substep in the execution of the computer-implemented and / or machine-implemented method (600). l1 to R lm and R q1,2 to R q(m-1),m ) for which steps a) to g) of the sub-procedures (620 to 680) of the measurement steps (700) were carried out. iii. The sensor system (SSYS) is preferably configured to perform, as substep iii) of the execution of the computer-implemented and / or machine-implemented method (600), the output (730) and / or storage and / or signaling and / or use of determined resistance values ​​of measuring resistors.

[0042] This enables the measurement of the resistance network (RN)

[0043] In another variant of the sensor system (SSYS), the sensor system (SSYS) is preferably configured to perform further steps. A) In this further variant of the sensor system (SSYS), the sensor system (SSYS) is preferably configured to perform the step of checking (810) whether a predetermined number of measurement cycles (800) has been carried out as part of the execution of the computer-implemented and / or machine-implemented method (600). B) In this further variant of the sensor system (SSYS), the sensor system (SSYS) is preferably configured to perform, within the scope of the execution of the computer-implemented and / or machine-implemented method (600), if the predetermined number of measurement cycles (800) has been completed, the step of determining (820) the resistance values ​​of the measuring resistors (R) l1 to R lm and R q1,2 to R q(m-1),m) from the values ​​already determined several times in step ii) (720) for several measurement cycles. C) In this further variant of the sensor system (SSYS), the sensor system (SSYS) is preferably configured to perform, within the scope of the execution of the computer-implemented and / or machine-implemented method (600), the step of outputting (830) and / or keeping available and / or signaling and / or using resistance values ​​of measuring resistors thus determined as a result of a plurality of measurement cycles.

[0044] This enables the determination of measurement tolerances and the detection of aging processes, etc. Advantage

[0045] The devices and methods presented here enable the reduction of the number of measuring resistor connections from m measuring resistor connections P1 to P n on a number of m measuring resistor connections P1 to P m , which reduces costs. List of characters Fig. Figure 1 shows a state-of-the-art sensor system for measuring n measuring resistances R l1 to R ln The sensor system includes a sensor evaluation circuit IC. The sensor evaluation circuit IC includes n current sources (CS1 to CS1). n Preferably, the sensor evaluation circuit IC is a micro-integrated microelectronic semiconductor circuit. Fig. Figure 2 shows a simplified and schematic example of a sensor system SSYS. Fig. Figure 3 shows an example switching matrix SM. Fig. Figure 4 shows an exemplary switching matrix SM, which largely corresponds to the switching matrix SM of the Fig. 3 corresponds and where now m additional earthing switches S q0,1 to S q0,m exactly one of the m external nodes eN1 to eN each m be able to electrically connect to the reference potential node GND. Fig. Figure 5 shows, by way of example and schematically, essential exemplary device components of a sensor evaluation circuit IC, as used, for example, in a proposed sensor system such as that of the exemplary Fig. 2 can be used. Fig. Figure 6 shows the proposed procedure 600, in particular for measuring the n measuring resistances (R). l1 , until R lm and R q1,2 to R q(m-1),m ) of a proposed sensor system SSYS and / or for measuring the n measuring resistances (R l1 to R lm and R q1,2 to R q(m-1),m ) of a proposed sensor system SSYS using a proposed sensor evaluation circuit IC to determine n respective measured values ​​from n measuring resistors (R) l1 to R lm and R q1,2 to R q(m-1),m ). Fig. Figure 7 shows an example of the SSYS sensor system of the SSYS sensor system. Fig. 2 with n=3 and m=2. Fig. Figure 8 shows an example switching matrix SM of the switching matrix SM of the Fig. 4 with n=3 and m=2 for a sensor system SSYS of the Fig. 7. Fig. Figure 9 shows an exemplary sensor system SSYS of the Fig. 2 with a switching matrix SM of the Fig. 4 for n=3 and m=2. Fig. Figure 10 shows an exemplary sensor system SSYS of the Fig. 9, where now the first longitudinal switch S l1 is closed. Fig. Figure 11 shows an exemplary sensor system SSYS of the Fig. 9, where now the second longitudinal switch S l2 is closed. Fig. Figure 12 shows an exemplary sensor system SSYS of the Fig. 9, where now the first second cross switch Sq1,2 and the second longitudinal switch Sl2 are closed. Fig. Figure 13 shows an exemplary sensor system SSYS of the Fig. 9, with the second longitudinal switch Sl2 and the first earthing switch Sq0,1 now closed. Fig. Figure 14 shows an exemplary sensor system SSYS of the Fig. 9, where now the first longitudinal switch S l1 and the second earthing switch S q0,2 are closed. Fig. Figure 15 shows an exemplary sensor system SSYS of the Fig. 9, where now the first longitudinal switch S l1 and the second longitudinal switch S l1 are closed. Fig. Figure 16 shows an exemplary sensor system SSYS of the Fig. 9, where now the first second cross switch S q1,2 and the first longitudinal switch S l1 are closed. Fig. Figure 17 shows an exemplary sensor system SSYS of the Fig. 9, where now the first second cross switch S q1,2 and the first longitudinal switch S l1 and the second longitudinal switch S l2 are closed. Fig. 18 corresponds to the Fig. 9, where now the exemplary first second cross switch S q1,2by a first second differential amplifier op 1,2 is replaced as an example. Description of the figures: Figure 1

[0046] Fig. Figure 1 shows a state-of-the-art sensor system for measuring n measuring resistances R l1 to R ln For example, these could be piezoresistive measuring resistors of a piezoresistive measuring system, or NTC resistors or PTC resistors, to name just a few. A sensor evaluation circuit IC comprises n current sources CS1 to CS1. n Each of these n power sources CS1 to CS n feeds a respective measuring current from n measuring currents I1 to I n via a respective measuring resistor connection of n measuring resistor connections P1 to P n into each of these n assigned measuring resistors R l1 to R lna. In the prior art, the sensor evaluation circuit IC typically has suitable means to, for example, determine the respective potential at the respective measuring resistor terminal of the n measuring resistor terminals P1 to P1. n The respective resistance voltage of n resistance voltages is to be measured relative to a reference potential node GND. Such means can be, for example, analog-to-digital converters (ADCs). In the Fig. These means are not shown for clarity. A supply voltage line VDD provides the sensor evaluation circuit IC with electrical energy in the state of the art.

[0047] The problem with such a device is that each of the n measuring resistor terminals P1 to P n incurs costs. The aim of the proposal presented here is to reduce the number of n measuring resistor connections P1 to P1. non a number of m measuring resistor connections P1 to P m to reduce m to a value smaller than m and thus save the corresponding costs without increasing the number of n measuring resistances R that can be measured by the sensor evaluation circuit IC. l1 to R ln to reduce. Figure 2

[0048] Fig. Figure 2 shows a simplified and schematic example of a sensor system SSYS. For the sake of simplicity, not all switching elements and lines are shown. The continuation of the repeating structure in the vertical and horizontal directions is indicated by a chain of dots in the form “…”.

[0049] The n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m The resistance values ​​are distributed across two different groups of measuring resistors. The first group of measuring resistors comprises the m longitudinal resistances R. l1 to R lmThe sensor evaluation circuit IC now only has m measuring resistor connections P1 to P1. m as intended. At each measuring resistor terminal of the m measuring resistor terminals P1 to P m In this example, the Fig. 2 exactly one longitudinal resistance of the m longitudinal resistances R l1 to R lm with the first connection of this longitudinal resistance of the m longitudinal resistances R l1 to R lm electrically connected. The respective second connection of each of the m longitudinal resistors R l1 to R lm is electrically connected to the reference potential node GND. In this respect, the sensor system consisting of the m longitudinal resistors R corresponds to l1 to R lm with the sensor evaluation circuit IC, the sensor system SSYS Fig. 1 with m instead of n measuring resistor connections.

[0050] Additionally, the SSYS sensor system has k=nm transverse resistances (Rq) 1,2 to R q(m-1),m) as further measuring resistors. Each of these transverse resistors of the k transverse resistors (Rq 1,2 to R q(m-1),m ) is between a pair of two different measuring resistor terminals of the m measuring resistor terminals P1 to P m electrically switched. Between each pair of two measuring resistor terminals, the m measuring resistor terminals P1 to P1 are connected. m either exactly one transverse resistance of the k transverse resistances (Rq) 1,2 to R q(m-1),m ) or no cross-resistance is connected. Preferably, a resistor is connected between each pair of two measuring resistor terminals of the m measuring resistor terminals P1 to P1. m exactly one transverse resistance of the k transverse resistances (Rq 1,2 to R q(m-1),m ) switched on. However, this is not a necessary condition.

[0051] Each of the measuring resistor terminals of the m measuring resistor terminals P1 to P m is associated with a respective external node of the m external nodes eN1 to eN melectrically connected.

[0052] The k transverse resistances R q1,2 to R q(m—1),m and the m longitudinal resistances R l1 to R lm typically form a resistor network RN with m connections in the form of the m external nodes eN1 to eN1 m and a further connection in the form of the reference potential node GND. The measuring resistors R l1 to R lm and R q1,2 to R q(m-1),m ) This resistance network RN typically consists of device components of one or more sensors SENS. In the Fig. 2 is exemplary and serves to reduce the complexity of Fig. 2. Assume that the resistor network RN is a device component of a sensor SENS. The n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m However, this resistance network RN can also explicitly be device parts of several sensors SENS, which would then have to be drawn in.

[0053] To reduce complexity, the connections of the transverse resistances of the k transverse resistances (Rq) 1,2 to R q(m-1),m ) to the left only indicated.

[0054] As in the example of the Fig. 1 The sensor evaluation circuit IC has several, but now only m current sources CS1 to CS m The sensor evaluation circuit IC further comprises m internal nodes iN1 to iN m . Each of the power sources of the m power sources CS1 to CS m feeds a respective current source current of this respective current source of the m current sources CS1 to CS m in exactly one respective internal node of the m internal nodes iN1 to iN m one. In each internal account of the m internal nodes iN1 to iN m According to the technical teaching presented here, exactly one of the m power sources CS1 to CS1 feeds into the current source. mtheir respective current source current, if the following switching matrix SM allows an outflow of charge carriers of this respective current source current from the respective current source of the m current sources CS1 to CS m each allows.

[0055] Depending on a switching state of the switching matrix SM, the switching matrix SM can preferably select any current source from m current sources CS1 to CS1. m and more precisely, each internal account of the m internal nodes iN1 to iN m from the resistance network RN by means of a respective longitudinal switch of m longitudinal switches S l1 to S lm Disconnect or connect to the resistor network RN. Depending on a switching state of the switching matrix SM, the switching matrix can preferably connect any of the m current sources CS1 to CS1. m and more precisely, each internal account of the m internal nodes iN1 to iN mfrom a corresponding external node of the m external nodes eN1 to eN m by means of the aforementioned respective longitudinal switch of m longitudinal switches S l1 to S lm electrically disconnect or connect to this corresponding external node of the external nodes eN1 to eN m by means of the aforementioned respective longitudinal switch of m longitudinal switches S l1 to S lm connect electrically.

[0056] Preferably, the switching matrix SM can, depending on a switching state of the switching matrix SM, preferably select any measuring resistor connection of the m measuring resistor connections P1 to P1 m with any other measuring resistor connection of the m measuring resistor connections P1 to P m by means of a respective cross switch of k=nm cross switches S q1,2 to S q(m-1),m disconnect or disconnect this measuring resistor connection of the m measuring resistor connections P1 to P mwith this other measuring resistor connection of the m measuring resistor connections P1 to P m by means of this respective cross switch of k=nm cross switches S q1,2 to S q(m-1),m connect.

[0057] Preferably, the switching matrix SM can, depending on a switching state of the switching matrix SM, preferably select any external node of the m external nodes eN1 to eN1. m with any other external node of the m external nodes eN1 to eN m by means of a respective cross switch of k=nm cross switches S q1,2 to S q(m-1),m disconnect this external node from the m external nodes eN1 to eN m with this other external node of the m external nodes eN1 to eN m by means of this respective cross switch of k=nm cross switches S q1,2 to S q(m-1),m connect.

[0058] In one variant, the switching matrix SM can, for example, preferentially select any external node of the m external nodes eN1 to eN, depending on a switching state of the switching matrix SM. m with a reference potential by means of a respective earthing switch of m earthing switches S q0,1 to S q0,m disconnect this external node from the m external nodes eN1 to eN m with this reference potential by means of the respective earthing switch of m earthing switches S q0,1 to S q0,m connect.

[0059] For measuring the n measuring resistors (R l1 to R lm and R q1,2 to R q(m—1),m ) the sensor system SSYS, specifically the sensor evaluation circuit IC, now sets n different switching states that are not co-linear, so that the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m) with each setting of such an individualized switching state m voltage values ​​for the potential of the m internal nodes iN1 to iN m Supply voltage to the reference potential node GND. The sensor system can detect and, for example, store these m voltage values ​​with each switching state. By setting, for example, n distinct switching states, the SSYS sensor system can thus determine n*m ​​voltage values ​​and calculate the resistance values ​​from them. It is easy to understand that with a suitable selection of switching states, n switching states are sufficient.

[0060] For example, it makes sense to consider individual transverse resistances of the k transverse resistances (Rq) 1,2 to R q(m-1),m ) by the corresponding cross switches of the k=nm cross switches S connected in parallel to each of these q1,2 to S q(m-1),mThe switching matrix is ​​connected in individual switching states, thus connecting the corresponding series resistances in parallel. It is then advisable to switch off one of the two current sources short-circuited by this respective cross-switch, or to use the corresponding series switch of the m series switches S. l1 to S lm to decouple. Figure 3

[0061] Fig. Figure 3 shows an example switching matrix SM. Such a switching matrix SM can be used, for example, in a device such as the Fig. 2. For simplicity, not all switching elements and lines are shown. The continuation of the repeating structure in the vertical and horizontal directions is indicated by a chain of dots in the form “.…”.

[0062] Depending on a switching state of the switching matrix SM, the switching matrix SM can preferably select any current source from m current sources CS1 to CS1. m and more precisely, each internal account of the m internal nodes iN1 to iN m from the resistance network RN by means of a respective longitudinal switch of m longitudinal switches S l1 to S lm Disconnect or connect to the resistor network RN. Depending on a switching state of the switching matrix SM, the switching matrix can preferably connect any of the m current sources CS1 to CS1. m and more precisely, each internal account of the m internal nodes iN1 to iN m from a corresponding external node of the m external nodes eN1 to eN m by means of the aforementioned respective longitudinal switch of m longitudinal switches S l1 to S lm electrically disconnect or connect to this corresponding external node of the external nodes eN1 to eN mby means of the aforementioned respective longitudinal switch of m longitudinal switches S l1 to S lm connect electrically.

[0063] Preferably, the switching matrix SM can, depending on a switching state of the switching matrix SM, preferably select any measuring resistor connection of the m measuring resistor connections P1 to P1 m with any other measuring resistor connection of the m measuring resistor connections P1 to P m by means of a respective cross switch of k=nm cross switches S q1,2 to S q(m-1),m disconnect or disconnect this measuring resistor connection of the m measuring resistor connections P1 to P m with this other measuring resistor connection of the m measuring resistor connections P1 to P m by means of this respective cross switch of k=nm cross switches S q1,2 to S q(m-1),m connect.

[0064] Preferably, the switching matrix SM can, depending on a switching state of the switching matrix SM, preferably select any external node of the m external nodes eN1 to eN1. m with any other external node of the m external nodes eN1 to eN m by means of a respective cross switch of k=nm cross switches S q1,2 to S q(m-1),m disconnect this external node from the m external nodes eN1 to eN m with this other external node of the m external nodes eN1 to eN m by means of this respective cross switch of k=nm cross switches S q1,2 to S q(m-1),m connect.

[0065] In one variant, the switching matrix SM can, for example, preferentially select any external node of the m external nodes eN1 to eN, depending on a switching state of the switching matrix SM. m with a reference potential by means of a respective earthing switch of m earthing switches S q0,1 to S q0,mdisconnect this external node from the m external nodes eN1 to eN m with this reference potential by means of the respective earthing switch of m earthing switches S q0,1 to S q0,m connect.

[0066] For measuring the n measuring resistors (R l1 to R lm and R q1,2 to R q(m—1),m ) the sensor system SSYS, specifically the sensor evaluation circuit IC, now sets n different switching states that are not co-linear, so that the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ) with each setting of such an individualized switching state m voltage values ​​for the potential of the m internal nodes iN1 to iN mSupply voltage to the reference potential node GND. The sensor system can detect and, for example, store these m voltage values ​​with each switching state. By setting, for example, n distinct switching states, the SSYS sensor system can thus determine n*m ​​voltage values ​​and calculate the resistance values ​​from them. It is easy to understand that with a suitable selection of switching states, n switching states are sufficient.

[0067] For example, it makes sense to consider individual transverse resistances of the k transverse resistances (Rq) 1,2 to R q(m-1),m ) by the corresponding cross switches of the k=nm cross switches S connected in parallel to each of these q1,2 to S q(m-1),mThe switching matrix is ​​connected in individual switching states, thus connecting the corresponding series resistances in parallel. It is then advisable to switch off one of the two current sources short-circuited by this respective cross-switch, or to use the corresponding series switch of the m series switches S. l1 to S lm to decouple.

[0068] The longitudinal switches and the transverse switches are preferably controlled by a switch control unit, which is not shown here for clarity.

[0069] This switch control preferably controls each linear switch of the m linear switch S l1 to S lm and each cross switch of the k=nm cross switch S q1,2 to S q(m-1),mEach switch is individually controlled by a separate control line (not shown for clarity). Preferably, a CPU of the control circuit IC of the sensor system SSYS can access the switch control via a data bus DB and control and adjust the switch control, and thus the state of the respective control lines for controlling the individual switches of the switching matrix SM. Preferably, a CPU of the sensor evaluation circuit IC of the sensor system SSYS can access the switch control via the data bus DB and query the state of the switch control, and thus the state of the respective control lines for controlling the individual switches of the switching matrix SM. Figure 4

[0070] Fig. Figure 4 shows an example of a switching matrix SM. Such a switching matrix SM can be used, for example, in a device such as the Fig. 2. For simplicity, not all switching elements and lines are shown. The continuation of the repeating structure in the vertical and horizontal directions is indicated by a chain of dots in the form “.…”.

[0071] The SM switching matrix of Fig. 4 largely corresponds to the SM switching matrix of the Fig. 3, where now m additional earthing switches S q0,1 to S q0,m exactly one of the m external nodes eN1 to eN each m be able to electrically connect to the reference potential node GND.

[0072] The longitudinal switches, the transverse switches and the earthing switches are preferably controlled by a switch control system, which is not shown here for clarity.

[0073] This switch control preferably controls each linear switch of the m linear switch S l1 to S lmand each cross switch of the k=nm cross switch S q1,2 to S q(m—1),m and each earthing switch of the earthing switches S q0,1 to S q0,m Each switch is individually controlled by a separate control line (not shown for clarity). Preferably, a CPU of the sensor evaluation circuit IC of the SSYS sensor system can access the switch control via a DB data bus and control and adjust the switch control, and thus the state of the respective control lines for controlling the individual switches of the SM switching matrix. Preferably, a CPU of the control circuit IC of the SSYS sensor system can access the switch control via the DB data bus and query the state of the switch control, and thus the state of the respective control lines for controlling the individual switches of the SM switching matrix. Figure 5

[0074] Fig. Figure 5 shows, by way of example and schematically, essential exemplary device components of a sensor evaluation circuit IC, as used, for example, in a proposed sensor system such as that of the exemplary Fig. 2 can be used. The exemplary sensor evaluation circuit IC in the example comprises the Fig. 5. One or more CPU cores and one or more memory MEMs. The one or more memory MEMs can comprise volatile and non-volatile memory. Preferably, one or more memory MEMs contain program codes for computer- and / or machine-implemented methods, which the CPU core can access via the DB data bus. When executing a computer- and / or machine-implemented method, the CPU core accesses and executes these program codes in one or more memory MEMs. Preferably, the CPU core controls the m current sources CS1 to CS1 by means of computer- and / or machine-implemented methods in this way. m Preferably, the m power sources are CS1 to CS1. m Controllable design. These are therefore preferably digital-to-analog converters (DACs). The current sources CS1 to CS mpreferably form a current source system with m outputs, the internal nodes iN1 to iN m , which the CPU core can preferably control via the DB data bus. Preferably, the CPU core can use the DB data bus to control the state of individual power sources of the m power sources CS1 to CS1. m As described above, the CPU can preferably use the DB data bus to set and control the state of switches in the SM switching matrix, and thus the switching state of the SM switching matrix, and also preferably query it. Preferably, the CPU can communicate with other computer systems via a DBIF data interface and an external EXTDB data bus. This allows the SSYS sensor system, which includes the proposed sensor evaluation circuit IC, to communicate with other computer systems. These other computer systems can then potentially control the SSYS sensor system and query measured values.

[0075] As proposed, the CPU of such a sensor evaluation circuit IC implements a computer- and / or machine-implemented method for determining the resistance values ​​of the n measuring resistors R. l1 to R lm and R q1,2 to R q(m-1),m ) which is stored at least temporarily in one or more memory locations of the sensor evaluation circuit IC. As proposed, the CPU of such a sensor evaluation circuit IC executes a computer- and / or machine-implemented method to determine measured values ​​from the determined resistance values ​​of these n measuring resistors R. l1 to R lm and R q1,2 to R q(m—1),m). Preferably, the CPU core stores such determined resistance values ​​and / or calculated measured values ​​as stored data in one or more memory locations (MEM). Preferably, the CPU core outputs such determined resistance values ​​and / or calculated measured values ​​via the external data bus (EXTDB) or by other means.

[0076] The supply voltage line VDD typically supplies such a sensor evaluation circuit IC with electrical energy. Figure 6

[0077] Fig. Figure 6 shows the method 600 claimed in claim 5, in particular for measuring the n measuring resistances (R). l1 to R lm and R q1,2 to R q(m-1),m ) of a proposed sensor system SSYS and / or for measuring the n measuring resistances (R l1 to R lm and R q1,2 to R q(m-1),m) of a proposed sensor system SSYS using a proposed sensor evaluation circuit IC to determine n respective measured values ​​from n measuring resistors (R) l1 to R lm and R q1,2 to R q(m-1),m ).

[0078] The proposed procedure 600 typically starts with the provision of the resources to carry out the procedure 600. These resources typically include the sensor system SSYS and, for example, a computer system that controls the proposed sensor system SSYS and reads the measured values ​​via the external data bus EXTDB of the sensor evaluation circuit IC of the proposed sensor system SSYS.

[0079] This is typically followed by the execution of one or more measurement cycles 800 with a respective, typically predetermined plurality of measurement steps 700 per measurement cycle 800, wherein in each measurement step of these measurement steps 700 of a measurement cycle 800 of these measurement cycles a respective measurement step procedure 700 performs the following sub-procedure steps (620 to 680):

[0080] The first sub-process step a) of the sub-process steps (620 to 680) concerns the setting 620 of a switching state of a switching matrix SM and / or the sensor evaluation circuit IC, which differs from all switching states of all measurement steps 400 of this measurement cycle of these measurement cycles (620 to 800).

[0081] The second sub-process step b) of the sub-process steps (620 to 680) concerns the injection 630 of at least one respective measuring current of the measuring currents (I1 to I) that differs in magnitude from 0A m) in at least one of the m internal nodes (iN1 to iN1) that is exclusively associated with this respective measuring current m ), in particular by at least one current source of the current sources (CS1 to CS1) that is exclusively associated with each respective measuring current m );

[0082] The third sub-procedure step c) of the sub-procedure steps (620 to 680) concerns the forwarding 640 of at least one, respective measuring current of the measuring currents (I1 to I) m ) from this at least one internal node of the internal nodes (iN1 to iN) that belongs exclusively to exactly this respective measuring current m ) into exactly one external node of the external nodes (eN1 to eN m ).

[0083] The fourth sub-process step d) of the sub-process steps (620 to 680) concerns the switching state-dependent connection 650 of the other external nodes (eN1 to eN1). m), into which no measuring current of the measuring currents (I1 to I) m ) is fed in with a different amount than 0A, with the reference potential node GND or disconnecting 650 of this other external node of the external nodes (eN1 to eN m ) from the reference potential node GND and the separation of 650 of the external nodes of the external nodes (eN1 to eN m ), into which a measuring current of the measuring currents (I1 to I m ) is fed in with a value different from 0A, from the reference potential node GND;

[0084] The fifth sub-process step e) of the sub-process steps (620 to 680) concerns the injection 660 of at least one respective part of each of the respective measuring currents (I1 to I) that is different from 0A. m ) into exactly one respective longitudinal resistance of the m longitudinal resistances (R l1 to R lm ), which is assigned to this respective measuring current and which is between this respective external node of the external nodes (eN1 to eN1)m ) from step c) 640 and a reference potential node GND is each switched;

[0085] The sixth sub-process step f) of the sub-process steps (620 to 680) concerns the injection 670 of the respective other part of this respective measuring current of the measuring currents (I1 to I) m )) in exactly those respective transverse resistances of the (nm) transverse resistances (R q1,2 to R q(m-1),m ), which are between exactly this external node of the external nodes (eN1 to eN m ) from step c) 640 and the respective other external nodes of the external nodes (eN1 to eN m ) are each switched on.

[0086] The sixth sub-process step g) of the sub-process steps (620 to 680) concerns the acquisition 680 of the respective voltages of these internal nodes of the internal nodes (iN1 to iN) m) relative to a reference potential node and / or in particular the voltage drop across this current source of current sources (CS1 to CS m ) from step b) 630, in particular by measuring instruments such as an analog-to-digital converter (ADC).

[0087] This completes measurement step 700.

[0088] Preferably, in the proposed method 600, the sensor system SSYS checks in a test step 690 whether all measurement step procedures 700 of the current measurement cycle 800 have been carried out. If "yes", the determination 720 of the resistance values ​​of the measuring resistors (R) follows. l1 to R lm and R q1,2 to R q(m-1),m If "no", a new switching state of one or the switching matrix SM and / or the sensor evaluation circuit IC is set, which differs from the previous switching states of the previous measurement steps 700 within the measurement cycle 800.

[0089] Typically, the proposed sensor system SSYS performs at least one measurement cycle procedure 800 in each of these measurement cycles, each of the following sub-procedure steps i) to iii): The first sub-procedure step i) of the sub-procedure steps (700 to 730) concerns the previously described execution (700, 690) of the measurement steps 700 with the necessary measurement-step-related sub-procedures (620 to 690). The second sub-procedure step ii) of the sub-procedure steps (700 to 730) concerns the determination of the resistance values ​​of the measuring resistors (R) (720). l1 to R lm and R q1,2 to R q(m-1),m ), for which steps a) to g) of the sub-procedures (620 to 680) of measurement steps 700 were carried out. The third sub-procedure step iii) of the sub-procedure steps (700 to 730) concerns the output 730 and / or keeping available and / or signaling and / or using determined resistance values ​​of measuring resistors.

[0090] One variant of the proposed procedure 600 includes the additional step of checking 810 whether a predetermined number of measurement cycles 800 have been carried out.

[0091] If the predetermined number of measurement cycles 800 is reached, the resistance values ​​of the measuring resistors (R) are determined according to this variant of the procedure 600. l1 to R lm and R q1,2 to R q(m-1),m) from the values ​​already determined several times in step ii) 720 for several measurement cycles and output 830 and / or keep available and / or signal and / or use resistance values ​​of measuring resistors determined in this way as a result of a plurality of measurement cycles.

[0092] If the predetermined number of measurement cycles (800) is reached, the next measurement cycle (800) is carried out again according to this variant of procedure 600. Figure 7

[0093] Fig. Figure 7 shows an example of the SSYS sensor system of the SSYS sensor system. Fig. 2 with n=3 and m=2. Further explanation can be found in the following text in the description of the Fig. 9. Figure 8

[0094] Fig. Figure 8 shows an example switching matrix SM of the switching matrix SM of the Fig. 4 with n=3 and m=2 for a sensor system SSYS of the Fig. 7. Further explanation can be found in the following text in the description of the Fig. 9. Figure 9

[0095] Fig. Figure 9 shows an exemplary sensor system SSYS of the Fig. 2 with a switching matrix SM of the Fig. 4 for n=3 and m=2. The SSYS sensor system of the Fig. 9 is therefore a combination of the SSYS sensor system of the Fig. 7 with the SM switching matrix of the Fig. 8. The following text describes some switching states, exemplified by the Fig. 10 to 14 will be explained.

[0096] There are two switching states of the exemplary switching matrix SM ( Fig. 10 and Fig. 11) possible, in which exactly one of the exemplary two current sources (CS1, CS2) feeds exactly one measuring current of the two possible measuring currents (I1, 12) into the sensor network RN via exactly one measuring resistor connection of the two measuring resistor connections (P1, P2) of the housing of the sensor evaluation circuit IC.

[0097] It is a switching state of the exemplary switching matrix SM ( Fig. 15) possible, in which the exemplary two current sources (CS1, CS2) each feed one measuring current of the two possible measuring currents (I1, 12) into the sensor network RN via their respective assigned measuring resistor connection of the two measuring resistor connections (P1, P2) of the housing of the sensor evaluation circuit IC.

[0098] It is a switching state of the exemplary switching matrix SM ( Fig. 15) possible, where the first second cross switch S q1,2 the first second transverse resistance R q1,2short-circuits. The two example current sources (CS1, CS2) can then each feed one of the two possible measuring currents (I1, I2) into the sensor network RN via their respective measuring resistor connections (P1, P2) of the sensor evaluation circuit IC housing. This results in three sub-variants for currenting the resistor network RN: In a first sub-variant, the first longitudinal switch S l1 closed and the first current source CS1 of the two current sources (CS1, CS2) energizes the resistor network with a first measuring current I1. Fig. 16) In a second sub-variant, the second longitudinal switch S l2 closed and the second current source CS2 of the two current sources (CS1, CS2) energizes the resistor network RN with a second measuring current I2. Fig. 12) The second sub-variant is the first longitudinal switch S l1and the second longitudinal switch S l2 closed and the first current source CS1 of the two current sources (CS1, CS2) energizes the resistor network with a first measuring current I1. and the second current source CS2 of the two current sources (CS1, CS2) energizes the resistor network RN with a second measuring current I2. Fig. 17) There are two switching states of the exemplary switching matrix SM ( Fig. 13 and 14) are possible, in which exactly one current source of the two exemplary current sources (CS1, CS2) feeds exactly one measuring current of the two possible measuring currents (I1, 12) into the sensor network RN via the measuring resistor connection of the two measuring resistor connections (P1, P2) of the housing of the sensor evaluation circuit IC assigned to this current source, and an earthing switch of the two earthing switches (S q0,1 , S q0,2) via the respective other measuring resistor connection of the two measuring resistor connections (P1, P2) to conduct the current to the reference potential line GND.

[0099] An analog-to-digital converter (ADC) preferably detects the potential of the first internal node iN1 and / or the potential of the second internal node iN2 and / or the potential of the first external node iN1 and / or the potential of the second external node iN2.

[0100] Due to the many possible switching matrix states, it is possible to acquire more voltage values ​​than are necessary to determine the three unknown resistance values ​​of the measuring resistors (R). I1 , R I2 , R q1,2 ) to determine. It is therefore possible, in addition to these measuring resistance values, to determine the measuring resistances (R). I1 , R I2 , R q1,2For example, the two contact resistances of the two measuring resistor connections (P1, P2) can also be determined, and the functionality of these electrical measuring resistor connections (P1, P2) can be inferred from this. This redundancy increases the functional safety for safety-relevant sensor systems SSYS. Preferably, the computer core µC compares the determined resistance values ​​of the measuring resistors (R). l1 , R l2 , R q1,2 ) by means of a computer-implemented and / or machine-implemented method with predefined and / or programmed and / or calculated permissible respective resistance value ranges of these measuring resistors (R) l1 , R l2 , R q1,2 Preferably, the computer core µC calculates the permissible resistance value ranges of these measuring resistors (R) using a computer-implemented and / or machine-implemented method. l1 , R l2 , R q1,2) for example, depending on physical parameters to which the sensor system SSYS is exposed. For this purpose, the sensor system SSYS has one or more sensors that detect these physical parameters. Preferably, the analog-to-digital converter (ADC) converts the analog signals of these sensors into measured values. Optionally, one or more sensor elements of these sensors are part of the resistor network RN. For example, such a sensor could be a temperature sensor. This document therefore proposes that the sensor system not only measure the individual resistance value of a single measuring resistor of the measuring resistors (R) l1 , R l2 , R q1,2 ) compares with a permissible range of measuring resistance values, but rather that several measuring resistance values ​​from several measuring resistors of the measuring resistors (R) l1 , R l2 , R q1,2) form a measurement resistance value vector, whose vectorial measurement resistance value vector is compared with a vectorial, multidimensional permissible measurement resistance value range.

[0101] If, during the execution of a computer-implemented and / or hardware-implemented procedure for verifying the measured resistance values, the computer core (µC) detects that a measured resistance value and / or the measured resistance value vector is outside a permissible scalar or vector measured resistance value range, the computer core (µC) concludes that the sensor system (SSYS) is in error mode by executing the computer-implemented and / or hardware-implemented procedure. Preferably, the computer core (µC) then transmits the information about such an error mode to a higher-level computer system via the external data bus (EXTDB). Alternatively, the computer core (µC) can store the information about such an error in a memory (MEM) of the sensor system (SSYS) and / or make it available for transmission.In the case of n>3 and >2, the computer system µC can, for example, use the computer-implemented and / or hardware-implemented method for energizing the resistor network RN and for measuring the voltage drops and calculating the measuring resistance values ​​of the measuring resistors (R). l1 to R lm and R q1,2 to R q(m-1),m ) and the contact resistance values ​​of the measuring resistor connections (P1 to P m ) modify so that an error of one of the measuring resistors (R) l1 to R lm and R q1,2 to R q(m-1),m ) and / or a contact resistance of the contact resistance values ​​of the measuring resistor connections (P1 to P m ) no longer has any effect. Figure 10

[0102] Fig. Figure 10 shows an exemplary sensor system SSYS of the Fig. 9, where now the first longitudinal switch S l1is closed. In this switching state, the first current source CS1 can drive the parallel connection of the first series resistor R. l1 with the series circuit consisting of the first and second transverse resistor R q1,2 and second longitudinal resistance R l2 The first measuring current I1 is applied via the first measuring resistor connection P1 of the housing of the sensor evaluation circuit IC. Preferably, a multi-channel analog-to-digital converter (ADC) acquires the potential of the first internal node iN1 and / or the potential of the first external node eN1 as an exemplary first measured value for your exemplary first voltage drop value. Figure 11

[0103] Fig. Figure 11 shows an exemplary sensor system SSYS of the Fig. 9, where now the second longitudinal switch S l2 is closed. In this switching state, the second current source CS2 can drive the parallel connection of the second series resistor R. l2with the series circuit consisting of the first and second transverse resistor R q1,2 and first longitudinal resistance R l1 The second measuring current I2 is applied via the second measuring resistor connection P2 of the housing of the sensor evaluation circuit IC. Preferably, a multi-channel analog-to-digital converter (ADC) detects the potential of the second internal node iN2 and / or the potential of the second external node eN2 as an example of a second measured value for your example of a second voltage drop value. Figure 12

[0104] Fig. Figure 12 shows an exemplary sensor system SSYS of the Fig. 9, where now the first second cross switch S q1,2 the second longitudinal switch S l2 are closed. In this switching state, for example, the second current source CS2 can drive the parallel connection of the second series resistor R. l2 the first longitudinal resistance R l1The second measuring current I2 is applied via the first measuring resistor connection P1 and via the second measuring resistor connection P2 of the housing of the sensor evaluation circuit IC. The first second shunt resistor R q1,2 In this switching matrix state, the switching matrix SM is short-circuited and therefore plays no role. Preferably, a multi-channel analog-to-digital converter (ADC) acquires the potential of the first internal node iN1 and / or the potential of the first external node eN1 and / or the potential of the second internal node iN2 and / or the potential of the second external node eN2 as an exemplary third measured value for your exemplary third voltage drop value. Figure 13

[0105] Fig. Figure 13 shows an exemplary sensor system SSYS of the Fig. 9, where now the second longitudinal switch S l2 and the first earthing switch S q0,1are closed. In this switching state, for example, the second current source CS2 can drive the parallel connection of the second series resistor R. l2 the first second transverse resistance R q1,2 The second measuring current I2 is applied via the second measuring resistor connection P2 of the housing of the sensor evaluation circuit IC. The current component through the first second shunt resistor R q1,2 The current flows via the first measuring resistor terminal P1 of the housing to the reference potential line GND. The first series resistor R l1 In this switching matrix state, the switching matrix SM is short-circuited and therefore plays no role. Preferably, a multi-channel analog-to-digital converter (ADC) acquires the potential of the second internal node iN2 and / or the potential of the second external node eN2 as an exemplary fourth measured value for your exemplary fourth voltage drop value. Figure 14

[0106] Fig. Figure 14 shows an exemplary sensor system SSYS of the Fig. 9, where now the first longitudinal switch S l1 and the second earthing switch S q0,2 are closed. In this switching state, for example, the first current source CS1 can drive the parallel connection of the first series resistor R. l1 the first second transverse resistance R q1,2 Apply the first measuring current I1 via the first measuring resistor connection P1 of the housing of the sensor evaluation circuit IC. The current component through the first shunt resistor R q1,2 The current flows via the second measuring resistor terminal P2 of the housing to the reference potential line GND. The second series resistor R l2In this switching matrix state, the switching matrix SM is short-circuited and therefore plays no role. Preferably, a multi-channel analog-to-digital converter (ADC) acquires the potential of the first internal node iN1 and / or the potential of the first external node eN1 as an exemplary fifth measurement for your exemplary fifth voltage drop value. Figure 15

[0107] Fig. Figure 15 shows an exemplary sensor system SSYS of the Fig. 9, where now the first longitudinal switch S l1 and the second longitudinal switch S l1 are closed.

[0108] In this switching state, the first current source CS1 can supply the resistance network RN with the first measuring current I1 via the first measuring resistor connection P1 of the housing of the sensor evaluation circuit IC.

[0109] In this switching state, the second current source CS2 can supply the resistance network RN with the second measuring current I2 via the second measuring resistor connection P2 of the housing of the sensor evaluation circuit IC.

[0110] Preferably, a multi-channel analog-to-digital converter (ADC) captures the potential of the first internal node iN1 and / or the potential of the first external node eN1 as an exemplary sixth measurement for your exemplary sixth voltage drop value.

[0111] Preferably, a multi-channel analog-to-digital converter (ADC) captures the potential of the second internal node iN2 and / or the potential of the second external node eN2 as an exemplary seventh measurement for your exemplary seventh voltage drop value. Figure 16

[0112] Fig. Figure 16 shows an exemplary sensor system SSYS of the Fig. 9, where now the first second cross switch S q1,2 and the first longitudinal switch Sl1 are closed. In this switching state, for example, the first current source CS1 can drive the parallel connection of the first series resistor R. l1 with the second longitudinal resistance R l2 The first measuring current I1 is applied via the second measuring resistor connection P2 and via the first measuring resistor connection P1 of the housing of the sensor evaluation circuit IC. The first second shunt resistor R q1,2 In this switching matrix state, the switching matrix SM is short-circuited and therefore plays no role. Preferably, a multi-channel analog-to-digital converter (ADC) acquires the potential of the first internal node iN1 and / or the potential of the first external node eN1 and / or the potential of the second internal node iN2 and / or the potential of the second external node eN2 as an exemplary eighth measurement value for your exemplary eighth voltage drop value. Figure 17

[0113] Fig. Figure 17 shows an exemplary sensor system SSYS of the Fig. 9, where now the first second cross switch S q1,2 and the first longitudinal switch S l1 and the second longitudinal switch S l2 are closed.

[0114] In this switching state, for example, the first current source CS1 can drive the parallel connection of the first series resistor R. l1 with the second longitudinal resistance R l2 Power the IC with the first measuring current I1 via the second measuring resistor connection P2 and via the first measuring resistor connection P1 of the housing of the sensor evaluation circuit.

[0115] In this switching state, for example, the second current source CS2 can drive the parallel connection of the first series resistor R. l1 with the second longitudinal resistance R l2 Power the IC with the second measuring current I2 via the second measuring resistor connection P2 and via the first measuring resistor connection P1 of the housing of the sensor evaluation circuit IC.

[0116] The first second transverse resistance R q1,2 In this switching matrix state, the switching matrix SM is short-circuited and therefore plays no role. Preferably, a multi-channel analog-to-digital converter (ADC) acquires the potential of the first internal node iN1 and / or the potential of the first external node eN1 and / or the potential of the second internal node iN2 and / or the potential of the second external node eN2 as an exemplary eighth measurement for your exemplary ninth voltage drop value. Figure 18

[0117] Fig. 18 corresponds to the Fig. 9, where now the exemplary first second cross switch S q1,2 by a first second differential amplifier op 1,2 is replaced as an example. The first second differential amplifier op-amp 1,2It detects the voltage between the first measuring resistor terminal P1 and the second measuring resistor terminal P2 and generates the first control signal RS from it. 12 The first second differential amplifier op-amp 1,2 regulates using the first second control signal RS 12 the second measured current value of the second measured current I2. Preferably, the first second differential amplifier OP has 1,2 a PI control characteristic or a PID control characteristic. This approach allows the first second cross switch S to be used. q1,2 the Fig. 9 can be saved.

[0118] The principle presented here can also be applied to the SSYS sensor system of the Fig. 2 with n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ) and m measuring resistor connections (P1 to P m) can be extended. This results in more complex dependencies. The document presented here therefore proposes that one or more computer cores (µC) of the sensor system SSYS be equipped with such differential amplifiers (OP). 1,2 until surgery (m-1),m ) and / or means for detecting the voltages between the pairs of the m*(m-1) possible pairs of measuring resistor connections ((P1, P2) to (P (m-1) , P m ))- for example, by means of one or more analog-to-digital converters (ADCs) - by means of a computer-implemented and / or machine-implemented method, and by means of a computer-implemented and / or machine-implemented method, one or more control procedures are executed and one or more control signals of the control signals (RS1 to RS) are output. m ) generate using one or more digital-to-digital converters (DACs). These generate one or more control signals (RS1 to RS). m) then regulate one or more current sources of the current sources (CS1 to CS m Preferably, one or more computer cores (µC) execute the computer-implemented and / or machine-implemented methods by executing associated program codes, which are preferably located at least temporarily in one or more memory locations (MEM) of the sensor system (SSYS). Miscellaneous

[0119] The above description is not exhaustive and does not limit this disclosure to the examples shown. Other variations of the disclosed examples can be understood and carried out by those with ordinary expertise in the field, based on the drawings, the disclosure, and the claims. The indefinite articles "a" or "an" and their inflections do not preclude a plurality, while the mention of a specific number of elements does not preclude the possibility that more or fewer elements are present. A single unit can fulfill the functions of several elements mentioned in the disclosure, and conversely, several elements can fulfill the function of a single unit. Numerous alternatives, equivalents, variations, and combinations are possible without departing from the scope of this disclosure.Unless otherwise stated, all features of the present invention may be freely combined with one another. This applies to the entire document presented here. The features described in the figure description may also, unless otherwise stated, be freely combined with the other features as features of the invention. A restriction of individual features of the exemplary embodiments to combinations with other features of the exemplary embodiments is expressly not intended. Furthermore, material features of the device may be reformulated and used as process features, and vice versa. Such a reformulation is thus automatically disclosed.

[0120] The preceding detailed description refers to the accompanying drawings. The examples in the description and the drawings should be considered illustrative and are not to be regarded as limiting to the specific example or element described. Several examples can be derived from the preceding description and / or the drawings and / or the claims by modifying, combining, or varying certain elements. Furthermore, examples or elements not explicitly described can be derived by a person competent in this regard from the description and / or the drawings. Reference symbol list 600 methods 600 for measuring the n measuring resistances (R l1 to R lm and R q1,2 to R q(m-1),m ) of a sensor system SSYS and / or for measuring the n measuring resistances (R l1 to R lm and R q1,2 to R q(m-1),m) of a sensor system SSYS using a sensor evaluation circuit IC to determine n respective measured values ​​from n measuring resistors (R) l1 to R lm and R q1,2 to R q(m-1),m ); 610 Start of procedure 600 with provision of the means to carry out procedure 600, such as sensor system SSYS etc.; 620 Setting 620 a switching state of one or the switching matrix SM and / or the sensor evaluation circuit IC, which differs from all switching states of all measurement steps 700 of this measurement cycle of these measurement cycles (620 to 800); 630 Feed-in 630 at least one of the respective measuring currents (I1 to I) that differs in magnitude from 0A m ) in at least one of the m internal nodes (iN1 to iN1) that is exclusively associated with this respective measuring current m), in particular by at least one current source of the current sources (CS1 to CS1) that is exclusively associated with each respective measuring current m ), where all other measuring currents of the measuring currents (I1 to I m ) preferably but not necessarily should have an amount of 0A; 640 Forwarding 640 of at least one, respective measuring current of the measuring currents (I1 to I) m ) from this at least one internal node of the internal nodes (iN1 to iN) that belongs exclusively to exactly this respective measuring current m ) into exactly one external node of the external nodes (eN1 to eN m ); 650 Switching state-dependent connection 650 of the other external nodes of the external nodes (eN1 to eN m ), into which no measuring current of the measuring currents (I1 to I) m) is fed in with a different amount than 0A, with the reference potential node GND or disconnecting 650 of this other external node of the external nodes (eN1 to eN m ) from the reference potential node GND and disconnect 650 of the external nodes of the external nodes (eN1 to eN m ), into which a measuring current of the measuring currents (I1 to I m ) is fed in with a value different from 0A, from the reference potential node GND; 660 Feed in 660 at least one respective part of each of the respective measuring currents (I1 to I) that are different from 0A m ) into exactly one respective longitudinal resistance of the m longitudinal resistances (R l1 to R lm ), which is assigned to this respective measuring current and which is between this respective external node of the external nodes (eN1 to eN1) m) from step c) 640 and a reference potential node GND is each connected. The other part of the current preferentially flows through the cross-resistances of the cross-resistances (R) q1,2 to R q(m-1),m ), which are connected to one of their connections with this external node of the external nodes (eN1 to eN1) m ) from step c) 640 are electrically connected, from; 670 Feed-in 670 of the respective other part of this respective measuring current of the measuring currents (I1 to I m ) in exactly those respective transverse resistances of the (nm) transverse resistances (R q1,2 to R q(m-1),m ), which are between exactly this external node of the external nodes (eN1 to eN m ) from step c) 640 and the respective other external nodes of the external nodes (eN1 to eN m ) are each switched on; 680 Recording 680 of the respective voltages of these internal nodes of the internal nodes (iN1 to iN) m) relative to a reference potential node and / or in particular the voltage drop across this current source of current sources (CS1 to CS m ) from step b) 630, in particular by measuring instruments, e.g. an analog-to-digital converter (ADC); 690 Verification 690 whether all measurement step procedures 700 of a measurement cycle 800 have been carried out. If “yes”, the determination 720 of the resistance values ​​of the measuring resistors of the measuring resistors (R) follows. l1 to R lm and R q1,2 to R q(m-1),m ). If “no”, the setting of a new switching state of one or the switching matrix SM and / or the sensor evaluation circuit IC follows, which differs from the previous switching states of the previous measurement steps 700 within the measurement cycle 800; 700 Measurement step procedure 700 comprising several sub-procedure steps 620 to 690; 720 Determine 720 the resistance values ​​of measuring resistors of the measuring resistors (R l1 to R lmand R q1,2 to R q(m-1),m ) for which steps a) to g) of sub-procedures (620 to 680) of measurement steps 700 were carried out; 730 Output 730 and / or keep available and / or signal and / or use determined resistance values ​​of measuring resistors of the measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); 800 measurement cycle 800 encompassing several measurement step methods 700; 810 Check 810 whether a predetermined number of measurement cycles 800 have been performed; 820 Determine 820 the resistance values ​​of measuring resistors of the measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ) from the values ​​already determined several times in step ii) 720 for several measurement cycles; 830 Output 830 and / or keep available and / or signal and / or use resistance values ​​of measuring resistors determined in this way as a result of a plurality of measurement cycles; ADC Analog-to-Digital Converter; CS1 first current source CS1. Preferably, the first current source CS1 is a transistor current source within the sensor evaluation circuit IC; CS2 second current source CS2. Preferably, the second current source CS2 is a transistor current source within the sensor evaluation circuit IC; CS (m-1) (m-1)th power source CS (m-1) Preferably, the (m-1)th power source is CS. (m-1) to use a transistor current source within the sensor evaluation circuit IC; CS m m-th power source CS m Preferably, the m-th power source is CS. m to use a transistor current source within the sensor evaluation circuit IC; CS(n-1) (n-1)th power source CS (n-1) in the prior art. Preferably, the (n-1)th power source CS is (n-1) to use a transistor current source within the sensor evaluation circuit IC; CS n nth power source CS n in the state of the art. Preferably, the nth power source CS is n to use a transistor current source within the sensor evaluation circuit IC; eN1 first external node eN1 outside the sensor evaluation circuit IC; eN2 second external node eN2 outside the sensor evaluation circuit IC; eN (m-1) (m-1)th external node eN (m-1) outside the sensor evaluation circuit IC; eN m m-th external node eN m outside the sensor evaluation circuit IC; GND Reference potential node GND; IC sensor evaluation circuit IC; I1 first measuring current I1; iN1 is the first internal node within the sensor evaluation circuit IC; iN2 second internal node iN2 within the sensor evaluation circuit IC; in (m-1) (m-1)th internal node iN (m-1) within the sensor evaluation circuit IC; in m m-th internal node iN m within the sensor evaluation circuit IC; in (n-1) (n-1)th internal node iN (n-1) within the sensor evaluation circuit IC in the state of the art; in n nth internal node iN n within the sensor evaluation circuit IC in the state of the art; k is a positive integer less than n, where k = nm. k is typically the number of cross-resistances (R). q1,2 to R q(m-1),m ); m is a positive integer less than n. Here, m is typically the number of longitudinal resistances (R). l1 to R lm ); n Number of measuring resistors (R l1 to Rlm and R q1,2 to R q(m-1),m ), where n is an integer greater than 2; P1 first measuring resistor connection P1 of the housing of the sensor evaluation circuit IC; P2 second measuring resistor connection P2 of the housing of the sensor evaluation circuit IC; P (m-1) (m-1)th measuring resistor connection P (m-1) of the housing of the sensor evaluation circuit IC; P m m-th measuring resistor connection P m of the housing of the sensor evaluation circuit IC; P (n-1) (n-1)th measuring resistor connection P (n-1) of the housing of the sensor evaluation circuit IC in the state of the art; P n nth measuring resistor connection P n of the housing of the sensor evaluation circuit IC in the state of the art; R l1 first longitudinal resistance R l1 , which is connected between the first external node eN1 and the reference potential node GND. The first series resistance Rl1 is one of the m longitudinal resistances (R l1 to R lm ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R l2 second longitudinal resistance R l2 , which is connected between the second external node eN2 and the reference potential node GND. The second series resistor R l2 is one of the m longitudinal resistances (R l1 to R lm ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R l(m-1) (m-1)th longitudinal resistance R l(m-1) , which is between the (m-1)th external node eN (m-1) and is connected to the reference potential node GND. The (m-1)th series resistance R l(m-1) is one of the m longitudinal resistances (R l1 to R lm ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R lm m-th longitudinal resistance R lm , which is between the m-th external node eN m and is connected to the reference potential node GND. The m-th series resistance R l1m is one of the m longitudinal resistances (R l1 to R lm ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R l(n-1) (n-1)th longitudinal resistance R l(n-1) , which is between the (n-1)th external node eN (n-1) and is connected to the reference potential node GND. The (n-1)th series resistance R l(n-1) is one of the n longitudinal resistances (R l1 to R ln ) and thus one of the n measuring resistors (R l1 to R lm ) in the state of the art; R ln nth longitudinal resistance R lm , which is between the m-th external node eN m and is connected to the reference potential node GND. The m-th series resistance R l1mis one of the m longitudinal resistances (R l1 to R lm ) and thus one of the m measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R q1,2 first-second transverse resistance R q1,2 , which is connected between the first external node eN1 and the second external node eN2. The first-second cross-resistance R q1,2 is one of the nm transverse resistances (R q1,2 to R q(m-1),m ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R q1,3 first-third transverse resistance R q1,3 , which is connected between the first external node eN1 and the third external node eN3. The first-third cross-resistance R q1,3 is one of the nm transverse resistances (R q1,2 to R q(m-1),m ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); Rq1,(m-1) first (m-1) transverse resistance R q1,(m-1) , which is between the first external node eN1 and the (m-1)th external node eN (m-1) is switched. The first (m-1)th cross-resistor R q1,(m-1) is one of the nm transverse resistances (R q1,2 to R q(m-1),m ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R q1,m first-m-th transverse resistance R q1,m , which is between the second external node eN2 and the m-th external node eN m is switched. The first m-th transverse resistance R q1,m is one of the nm transverse resistances (R q1,2 to R q(m-1),m ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R q2,3 second third transverse resistance R q2,3, which is connected between the second external node eN2 and the third external node eN3. The second-third cross-resistance R q2,3 is one of the nm transverse resistances (R q1,2 to R q(m-1),m ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R q2,4 second fourth transverse resistance R q2,4 , which is connected between the second external node eN2 and the fourth external node eN4. The second-fourth cross-resistor R q2,4 is one of the nm transverse resistances (R q1,2 to R q(m-1),m ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R q2,(m-1) second (m-1) transverse resistance R q2,(m-1) , which is between the second external node eN2 and the (m-1)th external account eN (m-1) is switched. The second (m-1)th transverse resistance R q2,(m-1)is one of the nm transverse resistances (R q1,2 to R q(m-1),m ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R q2,m second-m transverse resistance R q2,m , which is between the second external node eN2 and the m-th external node eN m is switched. The second-m-th transverse resistance R q2,m is one of the nm transverse resistances (R q1,2 to R q(m-1),m ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ); R q(m-1),m (m-1)-ter-m-th transverse resistance R q(m-1),m , which is between the (m-1)th external node eN (m-1) and the m-th external accounts eN m is switched. The (m-1)th m-th transverse resistance R q(m.-1),m is one of the nm transverse resistances (R q1,2 to R q(m-1),m ) and thus one of the n measuring resistors (R l1 to R lm and R q1,2to R q(m-1),m ); SENS one or more sensors; SM switching matrix SM; SSYS Sensor System SSYS; Vdd supply voltage line VDD;

Claims

[1] Sensor system (SSYS), wherein the sensor system (SSYS) comprises a sensor evaluation circuit (IC), in particular a micro-integrated sensor evaluation circuit (IC), and wherein the sensor system comprises one or more sensors (SENS) and wherein one or more sensors (SENS) of the sensor system comprise measuring resistors and where, for the sake of clarity of this claim, permanently parallel-connected measuring resistors are considered to be one measuring resistor within the meaning of this claim and wherein the one or more sensors (SENS) of the sensor system have a number n of such measuring resistors (R) l1 to R lm and R q1,2 to R q(m-1),m ) include and where n is a positive integer greater than two and wherein the sensor evaluation circuit (IC) is in a housing with m measuring resistor connections (P1 to P1) m ) is housed and where m is a positive integer greater than one and less than n and wherein the sensor evaluation circuit (IC) m current sources (CS1 to CS m ) includes and wherein the sensor evaluation circuit (IC) comprises a controllable switching matrix (SM) and wherein the sensor evaluation circuit (IC) m internal nodes (iN1 to iN m ) (referring to the sensor evaluation circuit (IC)) includes and where the sensor system (SSYS) has m external nodes (eN1 to eN1) m ) (referring to the sensor evaluation circuit (IC)) includes and where each measuring resistor terminal of the m measuring resistor terminals (P1 to P m ) each with exactly one external node of these m external nodes (eN1 to eN1) m ) is electrically connected and where for each external account the m external nodes (eN1 to eN) m ) each external node has exactly one of the n measuring resistors (R) ı1 to R lmand R q1,2 to R q(m-1),m ) with this respective external node of the m external nodes (eN1 to eN m ) is electrically connected via the respective first terminal of this respective measuring resistor and is electrically connected to a reference potential node (GND) via the respective second terminal of this respective measuring resistor, where the following text refers to these m measuring resistors as series resistors (R l1 to R lm ) is designated, and where the nm=k remaining measuring resistances of the n measuring resistances (R l1 to R lm and Rq 1,2 to R q(m-1),m ), with k as a positive integer with 1≤nm, as k transverse resistances (Rq 1,2 to R q(m-1),m ) each between a respective pair from a first external node (eN i with 1≤i≤m) of the m external nodes (eN1 to eN m ) and a second external node (eN j with 1≤j≤m and i≠j) is electrically inserted, so that the respective first connection of the respective transverse resistance of the transverse resistances (R) q1,2 to R q(m-1),m ) with the respective first external node (eN i ) this respective pair is electrically connected and so that the respective second connection of the respective transverse resistance of the transverse resistances (R) q1,2 to R q(m-1),m ) with the respective second external node (eN j ) this respective pair is electrically connected where the m power sources (CS1 to CS m ) a respective measuring current of m respective measuring currents (I1 to I m ) in the respective internal nodes of the m internal nodes (iN1 to iN m ) feeds in, provided that the switching state of the controllable switching matrix (SM) allows an outflow of this respective measuring current of the m respective measuring currents (I1 to I) m ) allowed, and wherein the controllable switching matrix (SM) is configured to receive control signals, and the controllable switching matrix (SM) is configured to - depending on the received control signal, one or more first external nodes of the m external nodes (eN1 to eN1) m ) each first external node of these first external nodes with exactly one exactly corresponding external node of the m external nodes (eN1 to eN) m ) associated respective internal nodes of the m internal nodes (iN1 to iN m ) to connect electrically or - depending on the received control signal, one or more second external nodes of the m external nodes (eN1 to eN1) m ) each second external node of these second external nodes of each exactly one exactly this respective external node of the m external nodes (eN1 to eN m ) associated respective internal nodes of the m internal nodes (iN1 to iN m) to electrically disconnect and the controllable switching matrix (SM) is configured to - depending on the received control signal, one or more second external nodes of the m external nodes (eN1 to eN1) m ) each second external node of these second external nodes with exactly one further respective second external node of the m external nodes (eN1 to eN) m ) to connect electrically or - depending on the received control signal, one or more further second external nodes of the m external nodes (eN1 to eN1) m ) each second external node of these second external nodes of each exactly one further respective second external node of the m external nodes (eN1 to eN m ) to disconnect electrically. [2] Sensor system (SSYS) according to claim 1, wherein the controllable switching matrix (SM) is configured to - depending on the received control signal, one or more further second external nodes of the m external nodes (eN1 to eN1) m ) to electrically connect each second external node of these second external nodes to one or the reference potential node (GND) or - depending on the received control signal, one or more second external nodes of the m external nodes (eN1 to eN1) m ) to electrically disconnect each second external node of these second external nodes from one or the reference potential node (GND). [3] Sensor system (SSYS), in particular according to one of claims 1 to 2, wherein the sensor system (SSYS) has n measuring resistors (R) ı1 to R lm and R q1,2 to R q(m-1),m ), with n as a positive integer greater than two, includes and wherein the sensor system (SSYS) comprises a sensor evaluation circuit (IC) with m connections, where m is an integer positive number less than n, and where the n measuring resistors (R ı1 to R lm and R q1,2 to R q(m-1),m ) are arranged in a resistor network with m terminals plus one terminal for a reference potential node (GMND) and wherein sensor evaluation circuit (IC) is configured to determine the respective resistance value of each of the n measuring resistors (R) l1 to R lm and R q1,2 to R q(m-1),m ) to determine. [4] Sensor system (SSYS) according to any one of claims 1 to 3, wherein the sensor system is configured to detect a contact resistance fault of one or more measuring resistor terminals of the measuring resistor terminals (P1 to P1). m ) of the sensor system (SSYS) to detect. [5] Sensor system (SSYS) according to claim 4, wherein the sensor system is configured to detect a measurement resistance error of one or more of the n measurement resistors (R) l1 to R lm and R q1,2 to Rq(m-1),m ) to recognize. [6] Sensor system (SSYS) according to claim 4 and / or 5, wherein the sensor system is configured to modify, in the event of a contact resistance fault and / or a measuring resistance fault, the computer-implemented and / or machine-implemented calculation of the measuring resistance values ​​and / or the computer-implemented and / or machine-implemented calculation of the contact resistance values ​​and / or the current supply to the resistor network (RN) and / or the selection of the switching states used of the switching matrix (SM) such that the detected contact resistance fault and / or the detected measuring resistance fault has no effect or at least a reduced effect on the functionality of the sensor system (SSYS) and / or the measurement of the other contact resistances and / or measuring resistances of the n measuring resistors (R). l1 to R lm and R q1,2 to R q(m-1),m ) has. [7] Sensor system (SSYS) according to any one of claims 4 to 6, wherein the sensor system is configured to compare determined resistance values ​​with permissible resistance value ranges using computer-implemented and / or machine-implemented methods, and / or wherein the sensor system is configured to compare determined contact resistance values ​​with permissible contact resistance value ranges using computer-implemented and / or machine-implemented methods. [8] Sensor system (SSYS) according to claim 7, wherein one or more vectorial measuring resistance value ranges and / or one or more vectorial contact resistance value ranges are limited by one or more vectorial limit values ​​and wherein one or more measuring resistance value ranges and / or one or more contact resistance value ranges are limited by one or more limit values ​​and wherein one or more limit values ​​and / or one or more vector limit values ​​depend on one or more measuring resistance values ​​and / or one or more contact resistance values. [9] Sensor system (SSYS) according to any one of claims 1 to 8, wherein the sensor system (SSYS) is configured to perform one or more measurement cycles (800) with one or more measurement steps (700), and wherein the sensor system (SSYS) is configured to set a switching state of the switching matrix (SM) in each measurement step (700) of a measurement cycle (800), so that a temporal sequence of switching states of the switching matrix (SM) results as a switching matrix state sequence of a measurement cycle (800), and wherein this switching matrix state sequence depends on one or more determined measuring resistance values ​​and / or one or more contact resistance values ​​and / or a detected contact resistance error and / or a detected measuring resistance error. [10] Sensor system (SSYS) according to any one of claims 1 to 9, wherein the sensor system (SSYS) is configured to measure the current value of at least one of the m measuring currents (I1 to I1). m ) the associated at least one power source of the m power sources (CS1 to CS m ) at least temporarily from the voltage difference between the associated potential of the associated measuring resistor terminal of the m measuring resistor terminals (P1 to P m ) of the housing of the sensor evaluation circuit IC and another potential of another measuring resistor connection of the m measuring resistor connections (P1 to P m ) of the housing of the sensor evaluation circuit IC is dependent. [11] Sensor evaluation circuit (IC), in particular for use in a sensor system according to one of claims 1 to 10, for measuring n measuring resistances (R) l1 to R lm and R q1,2 to R q(m-1),m ) of a resistor network (RN) with n as a positive integer greater than two, within a sensor system (SSYS), wherein it may in particular be a sensor system according to any one of claims 1 to 10 and claim 3, and wherein the sensor evaluation circuit (IC) m connections (P1 to P m ) for m measuring resistors of the n measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ), with m as an integer positive number less than n, includes and wherein sensor evaluation circuit (IC) is configured to determine the respective resistance value of one or more of the n measuring resistors (R) in the resistor network (RN). ı1 to R lm and R q1,2 to Rq(m-1),m ) to determine, - if the n measuring resistors (R ı1 to R lm and R q1,2 to R q(m-1),m ) are arranged in the resistance network (RN) with m connections plus one connection for a reference potential node (GND) and - if these m terminals of the resistor network (RN) are connected to the m terminals (P1 to P m ) which are connected to the sensor evaluation circuit (IC). [12] Method (600) for measuring the n measuring resistances (R ı1 to R lm and R q1,2 to R q(m-1),m ) of a sensor system (SSYS) according to one of claims 1 to 10 and / or for measuring the n measuring resistances (R l1 to R lm and R q1,2 to R q(m-1),m ) of a sensor system (SSYS) using a sensor evaluation circuit (IC) according to claim 11 for determining n respective measured values ​​of n measuring resistors (R) l1 to R lm and R q1,2 to R q(m-1),m) with the steps Performing one or more measurement cycles (800) with a respective plurality of measurement steps (700) per measurement cycle (800); wherein in each measurement step of these measurement steps (700) of a measurement cycle (800) of these measurement cycles a respective measurement step procedure (700) each the sub-procedure steps (620 to 680) a) to g) with - a) Setting (620) a switching state of one or the switching matrix (SM) and / or the sensor evaluation circuit (IC) that differs from all switching states of all measurement steps (400) of this measurement cycle of these measurement cycles (620 to 800), and - b) Feeding in (630) at least one of the respective measuring currents (I1 to I) that differs in magnitude from 0A m ) in at least one of the m internal nodes (iN1 to iN1) that is exclusively associated with this respective measuring current m), in particular by at least one current source of the current sources (CS1 to CS1) that is exclusively associated with each respective measuring current m ), - c) Forwarding (640) at least one of the respective measuring currents (I1 to I) m ) from this at least one internal node of the internal nodes (iN1 to iN) that belongs exclusively to exactly this respective measuring current m ) into exactly one external node of the external nodes (eN1 to eN m ), - d) Switch state dependent connection (650) of the other external nodes of the external nodes (eN1 to eN m ), into which no measuring current of the measuring currents (I1 to I) m ) is fed in with a different magnitude than 0A, with the reference potential node (GND) or disconnecting (650) this other external node of the external nodes (eN1 to eN m ) from the reference potential node (GND) and disconnecting (650) the external nodes of the external nodes (eN1 to eN m), into which a measuring current of the measuring currents (I1 to I m ) is fed in with a value different from 0A, from the reference potential node (GND), - e) Feeding (660) at least one respective part of each of the respective measuring currents (I1 to I) other than 0A m ) into exactly one respective longitudinal resistance of the m longitudinal resistances (R l1 to R lm ), which is assigned to this respective measuring current and which is between this respective external node of the external nodes (eN1 to eN1) m ) from step c) (640) and a reference potential node (GND) is each switched, - f) Feeding (670) the respective other part of this respective measuring current of the measuring currents (I1 to I m ) in exactly those respective transverse resistances of the (nm) transverse resistances (R q1,2 to R q(m-1),m ), which are between exactly this external node of the external nodes (eN1 to eN m) from step c) (640) and the respective other external nodes of the external nodes (eN1 to eN m ) are each switched on, - g) Recording (680) the respective voltages of these internal nodes of the internal nodes (iN1 to iN) m ) relative to a reference potential node and / or in particular the voltage drop across this current source of current sources (CS1 to CS m ) from step b), in particular by measuring instrument (ADC) and wherein in each measurement cycle (800) of these measurement cycles at least one respective measurement cycle procedure (800) performs the sub-procedure steps - i) Performing (700, 690) the measurement steps (700) with the necessary measurement step-related sub-procedures (620 to 690); - ii) Determining (720) the resistance values ​​of measuring resistors of the measuring resistors (R ı1 to R lm and R q1,2 to R q(m-1),m) for which steps a) to g) of the sub-procedures (620 to 680) of the measurement steps (700) were carried out; - iii) Output (730) and / or keep available and / or signal and / or use determined resistance values ​​of measuring resistors. [13] The method of claim 12, comprising the additional steps - A) Check (810) whether a predetermined number of measurement cycles (800) have been performed; - B) if the predetermined number of measurement cycles (800) has been performed: Determine (820) the resistance values ​​of the measuring resistors of the measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ) from the values ​​already determined several times in step ii) (720) for several measurement cycles; - C) Output (830) and / or hold and / or signal and / or use resistance values ​​of measuring resistors determined so as a result of a plurality of measurement cycles. [14] Sensor system (SSYS) for measuring the n measuring resistances (R ı1 to R lm and R q1,2 to R q(m-1),m ) wherein the sensor system (SSYS) is configured to implement a computer-implemented and / or machine-implemented method (600) for determining n respective measured values ​​of n measuring resistances (R) l1 to R lm and R q1,2 to R q(m-1),m ) to be carried out using the following steps wherein the sensor system (SSYS) is configured to perform, within the execution of the computer-implemented and / or machine-implemented method (600), the step of performing one or more measurement cycles (800) with a respective plurality of measurement steps (700) per measurement cycle (800), wherein the sensor system (SSYS) is configured, within the execution of the computer-implemented and / or machine-implemented method (600), to perform, within each measurement step of these measurement steps (700) of a measurement cycle (800), a respective measurement step procedure (700) and the sub-procedure steps (620 to 680) a) to g), and - a) wherein the sensor system (SSYS) is configured to perform, as a substep (620) of the execution of the computer-implemented and / or machine-implemented method (600), the setting (620) of a switching state of a switching matrix (SM) and / or the sensor evaluation circuit (IC) which differs from all switching states of all measurement steps (400) of this measurement cycle of these measurement cycles (620 to 800), and - b) wherein the sensor system (SSYS) is configured to, as part of the execution of the computer-implemented and / or machine-implemented method (600), as substep b) inject (630) at least one respective measuring current of the measuring currents (I1 to I) that differs in magnitude from 0A m ) in at least one of the m internal nodes (iN1 to iN1) that is exclusively associated with this respective measuring current m), in particular by at least one current source of the current sources (CS1 to CS1) that is exclusively associated with each respective measuring current m ) to execute and - c) wherein the sensor system (SSYS) is configured to, as part of the execution of the computer-implemented and / or machine-implemented method (600), as substep c), forward (640) the at least one respective measuring current of the measuring currents (I1 to I) m ) from this at least one internal node of the internal nodes (iN1 to iN) that belongs exclusively to exactly this respective measuring current m ) into exactly one external node of the external nodes (eN1 to eN m ) to execute and - d) wherein the sensor system (SSYS) is configured to perform, as substep d) the switching state-dependent connection (650) of the other external nodes of the external nodes (eN1 to eN) as part of the execution of the computer-implemented and / or machine-implemented method (600). m ), into which no measuring current of the measuring currents (I1 to I) m ) is fed in with a value different from 0A, with the reference potential node (GND) or the disconnection (650) of this other external node of the external nodes (eN1 to eN m ) from the reference potential node (GND) and disconnecting (650) the external nodes of the external nodes (eN1 to eN m ), into which a measuring current of the measuring currents (I1 to I m ) is fed in with a value different from 0A, to be executed from the reference potential node (GND) and - e) wherein the sensor system (SSYS) is configured to, as part of the execution of the computer-implemented and / or machine-implemented method (600), as substep e), inject (660) at least a respective part of each of the respective measuring currents (I1 to I) other than 0A m ) into exactly one respective longitudinal resistance of the m longitudinal resistances (R l1 to R lm ), which is assigned to this respective measuring current and which is between this respective external node of the external nodes (eN1 to eN1) m ) from step c) (640) and a reference potential node (GND) is each switched, to execute and - f) wherein the sensor system (SSYS) is configured to, as part of the execution of the computer-implemented and / or machine-implemented method (600), as substep f) inject (670) the respective other part of this respective measuring current of the measuring currents (I1 to I) m) in exactly those respective transverse resistances of the (nm) transverse resistances (R q1,2 to R q(m-1),m ), which are between exactly this external node of the external nodes (eN1 to eN m ) from step c) (640) and the respective other external nodes of the external nodes (eN1 to eN m ) each are switched on, to execute and - g) wherein the sensor system (SSYS) is configured to perform, as substep g) of the execution of the computer-implemented and / or machine-implemented method (600), the detection (680) of the respective voltages of these internal nodes of the internal nodes (iN1 to iN) m ) relative to a reference potential node and / or in particular the voltage drop across this current source of current sources (CS1 to CS m) from section b), in particular by measuring means (ADC) and wherein the sensor system (SSYS) is configured to perform at least one respective measurement cycle procedure (800) in each of the following sub-process steps during the execution of the computer-implemented and / or machine-implemented method (600), - i) wherein the sensor system (SSYS) is configured to perform, as a substep i) the execution (700, 690) of the measurement steps (700) with the necessary measurement step-related sub-processes (620 to 690) as part of the execution of the computer-implemented and / or machine-implemented method (600), and - ii) wherein the sensor system (SSYS) is configured to determine (720) the resistance values ​​of measuring resistors of the measuring resistors (R) as a substep in the execution of the computer-implemented and / or machine-implemented method (600). l1to R lm and R q1,2 to R q(m-1),m ) for which steps a) to g) of the sub-procedures (620 to 680) of the measurement steps (700) were carried out, to perform and; - iii) wherein the sensor system (SSYS) is configured to perform, as substep iii) the output (730) and / or holding and / or signaling and / or using determined resistance values ​​of measuring resistors as part of the execution of the computer-implemented and / or machine-implemented method (600). [15] Sensor system (SSYS) according to claim 14, - A) wherein the sensor system (SSYS) is configured to perform, as part of the execution of the computer-implemented and / or machine-implemented method (600), the step of checking (810) whether a predetermined number of measurement cycles (800) have been carried out - B)) wherein the sensor system (SSYS) is configured to perform, during the execution of the computer-implemented and / or machine-implemented procedure (600), if the predetermined number of measurement cycles (800) has been completed, the step of determining (820) the resistance values ​​of measuring resistors of the measuring resistors (R l1 to R lm and R q1,2 to R q(m-1),m ) from the values ​​already determined several times in step ii) (720) for several measurement cycles and - C) wherein the sensor system (SSYS) is configured to perform, as part of the execution of the computer-implemented and / or machine-implemented method (600), the step of outputting (830) and / or holding and / or signaling and / or using resistance values ​​of measuring resistors thus determined as a result of a plurality of measurement cycles.

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