DISPLAY FACILITY

Abstract

A display device (100, 400, 500, 600) according to an example of the present description can comprise a substrate (110) with a plurality of subpixels (SP1, SP2, SP3) arranged thereon, a plurality of transistors (120) each arranged in the plurality of subpixels (SP1, SP2, SP3) on the substrate (110), and a plurality of first electrodes (141-1, 141-2, 141-3; 441-1, 441-2, 441-3; 541-1, 541-2, 541-3; 641-1, 641-2, 641-3) each arranged on and connected to the plurality of transistors (120). Each first electrode comprises a reflective layer (141M, 441M, 541M, 641M) and a transparent conductive layer (141T, 441T, 541T, 641T) arranged on top of the reflective layer (141M, 441M, 541M, 641M).The display device may further comprise a plurality of light-emitting parts (142), each arranged on the plurality of first electrodes (141-1, 141-2, 141-3; 441-1, 441-2, 441-3; 541-1, 541-2, 541-3; 641-1, 641-2, 641-3), and a second electrode (143) arranged on the light-emitting parts (142). The transparent conductive layer (141T, 441T, 541T, 641T) has a first section (141T1, 441T1, 541T1, 641T1) configured to be adjacent to the reflective layer (141M, 441M, 541M, 641M) and a second section spaced away from the reflective layer (141M, 441M, 541M, 641M).

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority over Korean patent application No. 10-2023-0126895, which was filed with the Korean Intellectual Property Office on September 22, 2023. BACKGROUNDTechnical field

[0002] The present disclosure relates to a display device and in particular to a display device capable of improving the luminous efficacy and the display quality. Discussion of related technologies

[0003] Unlike a liquid crystal display, an organic light-emitting diode (OLED) display does not require a separate light source and can therefore be manufactured as a lightweight, thin display. Furthermore, OLED displays offer advantages in terms of power consumption, as they operate at low voltage. In addition, OLED displays are considered a next-generation display due to their excellent color reproduction, response time, viewing angle, and contrast ratio (CR).

[0004] The organic light-emitting display device can be described as a display device that emits light independently. The organic light-emitting display device can display images using an organic light-emitting element. The organic light-emitting element injects electrons and holes into a light-emitting layer from a cathode for injecting electrons and an anode for injecting holes, and emits light when excitons, generated by coupling the injected electrons and holes, fall from an excited state to a ground state.

[0005] Organic light-emitting displays can be classified according to the direction in which the light is emitted into top-emission, bottom-emission, and dual-emission displays. Based on their operating method, they can also be classified into passive-matrix and active-matrix displays. SUMMARY OF DISCLOSURE

[0006] One objective to be achieved through aspects of the present disclosure is the provision of a highly efficient, energy-saving display device with improved luminous efficacy.

[0007] Another objective to be achieved by aspects of the present disclosure is to provide a display device capable of improving display quality by minimizing deterioration of luminance with respect to a viewing angle and change in color coordinates.

[0008] The objectives of this disclosure are not limited to those mentioned above, and other objectives not mentioned above can be clearly understood by those skilled in the art from the following descriptions. According to the aspects of this disclosure, display devices are provided in accordance with the independent claims. Further embodiments are described in the dependent claims.

[0009] A display device according to an embodiment of the present disclosure may comprise: a substrate on which a plurality of subpixels are arranged; a plurality of transistors, each arranged in the plurality of subpixels on the substrate; a plurality of first electrodes, each arranged on the plurality of transistors, connected to the plurality of transistors, and each comprising a reflective layer and a transparent conductive layer arranged on the reflective layer; a plurality of light-emitting parts, each arranged on the plurality of first electrodes; and a second electrode, arranged on the plurality of light-emitting parts, in which the transparent conductive layer comprises: a first section configured to adjoin the reflective layer;and a second section spaced from the reflecting layer, in which a micro-cavity interval of light emitted by a first section of the light-emitting part adjacent to the first section of the transparent conductive layer differs from a micro-cavity interval of light emitted by a second section of the light-emitting part adjacent to the second section of the transparent conductive layer.

[0010] A display device according to another embodiment of the present disclosure may comprise: a plurality of subpixels; a plurality of transistors, each arranged in the plurality of subpixels; a plurality of first electrodes, each arranged on the plurality of transistors, connected to the plurality of transistors, and each comprising a reflective layer and a transparent conductive layer arranged on the reflective layer; a plurality of light-emitting parts, each arranged on the plurality of first electrodes; and a second electrode arranged on the plurality of light-emitting parts, wherein the transparent conductive layer comprises a first section configured to be adjacent to the reflective layer and a second section spaced apart from the reflective layer, wherein a light,that emitted by a first section of the light-emitting part, adjacent to the first section of the transparent conductive layer, is amplified by a first micro-cavity interval, and that light emitted by a second section of the light-emitting part, adjacent to the second section of the transparent conductive layer, is amplified by a second micro-cavity interval, wherein a portion of the light emitted by one subpixel of the plurality of subpixels is configured to enhance light intensity at a mean viewing angle, and another portion of the light emitted by the one subpixel is configured to minimize a change in light intensity with a change in viewing angle.

[0011] Further details regarding the embodiments of the present disclosure are contained in the detailed description and the drawings.

[0012] According to the effects of the present disclosure, it is possible to improve the luminous efficacy of the display device by increasing the intensity of the light emitted by the subpixel.

[0013] According to the effects of the present disclosure, it is possible to suppress the deterioration of luminance and the change in color coordinates depending on the viewing angle by minimizing the change in light intensity depending on the change in the viewing angle.

[0014] The effects according to the aspects of this revelation are not limited to the contents discussed here, and this revelation includes various other effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and other aspects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which: Fig. 1 a top view of a display device according to an embodiment of the present disclosure; Fig. 2 a cross-sectional view along line II-II' in Fig. 1 is; Fig. 3 is a diagram that represents the light intensities in relation to the viewing angles in the first and second sections of the display device according to the embodiment of the present disclosure; Fig. 4A is a cross-sectional view of a display device according to another embodiment of the present disclosure; Fig. 4B an enlarged view of area IVb in Fig. 4A is; Fig. 5 is a cross-sectional view of a display device according to a further embodiment of the present disclosure; and Fig. 6 is a cross-sectional view of a display device according to a further embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EXECUTION FORMS

[0016] The advantages and features of the present disclosure and a method for achieving these advantages and characteristics will become clear when referring to the embodiments described in detail below and the accompanying drawings. However, the present disclosure is not limited to the embodiments disclosed herein, but can be implemented in various forms. The embodiments are presented only as examples so that the person skilled in the art can fully understand the disclosures and the scope of the present disclosure.

[0017] The shapes, sizes, ratios, angles, numbers, and the like shown in the accompanying drawings to describe embodiments of the present disclosure are merely examples, and the present disclosure is not limited to them. The same reference numerals generally denote the same elements throughout the entire disclosure.

[0018] Furthermore, the following description of the present disclosure may omit a detailed explanation of known related technologies in order to avoid unnecessarily obscuring the subject matter of the present disclosure. The expressions used here, such as "including," "with," and "consisting of," are generally intended to permit the addition of other components, unless the terms are used together with the term "only." All references to the singular may include the plural unless expressly stated otherwise.

[0019] Components are interpreted as including a normal error range, even if this is not explicitly stated.

[0020] When the positional relationship between two parts is described using terms such as "on", "above", "below", "next to", one or more parts can be positioned between the two parts unless the terms are used with the term "immediately" or "directly".

[0021] If one element or layer is positioned "on" another element or layer, another layer or element can be inserted directly on top of or between the other element.

[0022] Although the terms "first," "second," and the like are used to describe different components, these components are not restricted by these terms. These terms merely serve to distinguish one component from the others and do not necessarily establish an order. Therefore, a first component mentioned below may be a second component in a technical concept of the present disclosure.

[0023] Identical reference numbers generally refer to identical elements throughout the entire disclosure.

[0024] The size and thickness of each component shown in the drawing are shown for the sake of simplicity in description, and the present disclosure is not limited to the size and thickness of the component shown.

[0025] The features of the various embodiments of the present disclosure may be partially or completely retained or combined with one another and may be interlocked and operated in technically different ways, and the embodiments may be carried out independently of one another or in combination with one another.

[0026] Furthermore, the term "can" encompasses all meanings and applications of the term "may".

[0027] Various embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. All components of each display device according to all embodiments of the present disclosure are operationally coupled and configured.

[0028] Fig. Figure 1 is a top view of an organic light-emitting display device according to an embodiment of the present disclosure. Fig. 2 is a cross-sectional view along line II-II' in Fig. 1.

[0029] With reference to Fig. 1 and Fig. 2, comprising a display device 100, a lower substrate 110, transistors 120, organic light-emitting elements 140 and an upper substrate 150.

[0030] With reference to Fig. The lower substrate 110 is configured to support and protect several individual components of the display device 100. The lower substrate 110 can be made of a flexible plastic material. Alternatively, the lower substrate 110 can be made of an insulating, transparent material. For example, the lower substrate 110 can be made of transparent polyimide (PI).

[0031] The lower substrate 110 comprises a display area AA (or active area) and a non-display area NA (or inactive area). The non-display area NA may completely or partially surround the display area AA.

[0032] The display area AA can be located in a central section of the lower substrate 110. Display area AA can be an area of ​​the display device 100 in which images are displayed. Various display elements and various driver elements for operating the display elements can be arranged in display area AA. For example, the display elements can be configured as organic light-emitting elements 140 with first electrodes 141-1, 141-2, and 141-3, light-emitting parts 142, and second electrodes 143. Furthermore, various driver elements, such as transistors, capacitors, leads, and the like, configured to operate the display elements, can be arranged in display area AA.

[0033] A plurality of subpixels SP can be arranged in the display area AA. Each plurality of subpixels SP can be an area where a plurality of gate lines arranged in a first direction and a plurality of data lines arranged in a second direction, different from the first, intersect. In this case, the first direction can be a horizontal direction according to Fig. 1, and the second direction can be a vertical direction according to Fig. The present disclosure is not limited to this. The plurality of subpixels SP can comprise a plurality of first subpixels SP1, a plurality of second subpixels SP2, and a plurality of third subpixels SP3, which emit light rays of different colors. For example, the plurality of first subpixels SP1 can be red subpixels, the plurality of second subpixels SP2 can be green subpixels, and the plurality of third subpixels SP3 can be blue subpixels. However, the plurality of subpixels SP can also include a fourth subpixel, which is a white subpixel. The present disclosure is not limited to this.

[0034] The subpixel SP is a minimal unit that forms a screen. Multiple subpixels SP can each contain the organic light-emitting element 140 and a driver element. The driver element can comprise a switching transistor, a driver transistor, or similar. The driver element can be electrically connected to signal lines, such as gate lines and data lines, which are connected to gate drivers and data drivers located in the non-display area NA.

[0035] The non-display area NA can be located in a peripheral region of the lower substrate 110. The non-display area NA can be an area where no image is displayed. The non-display area NA can be positioned to surround the display area AA. Various components for operating the plurality of subpixels SP located in the display area AA can be located in the non-display area NA. For example, driver ICs, driver circuits, signal lines, flexible films, and the like can be located there, configured to provide signals for operating the plurality of subpixels SP. The driver IC can include a gate driver, a data driver, and the like.The driver IC and driver circuitry can be arranged using a Gate-in-Panel (GIP) method, a Chip-on-Film (COF) method, a Tape-Automatic-Bonding (TAB) method, a Tape-Carrier-Package (TCP) method, a Chip-on-Glass (COG) method, and the like.

[0036] The plurality of subpixels SP, which are arranged in the display area AA of the display device 100 according to the embodiment of the present disclosure, are below described with reference to Fig. 2 described in more detail.

[0037] With reference to Fig. 1 and Fig. 2 Together, the display device 100 according to the embodiment of the present disclosure can comprise the lower substrate 110, a buffer layer 111, a gate insulating layer 112, an intermediate insulating layer 113, a passivation layer 114, the transistor 120, a coating layer 115, the organic light-emitting element 140, a bank 116, an encapsulation layer 117, a color filter CF, a black matrix BM, a connector 118 and the upper substrate 150.

[0038] With reference to Fig. 2. The buffer layer 111 is arranged on the lower substrate 110. The buffer layer 111 can improve the bonding forces between the lower substrate 110 and the layers formed on the buffer layer 111. Furthermore, the buffer layer 111 can block the leaching of alkaline material from the lower substrate 110 and prevent the diffusion of moisture and / or oxygen penetrating from the outside of the lower substrate 110. The buffer layer 111 can be implemented as a single layer or as a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx). However, the present disclosure is not limited to this. Moreover, the buffer layer 111 may be absent depending on the nature and material of the lower substrate 110, the structure and type of the transistor 120, and similar factors.

[0039] Transistor 120 can be arranged on the buffer layer 111 and drive the organic light-emitting element 140. Transistor 120 can be arranged in each of the plurality of subpixels SP in the display area AA. Transistor 120, arranged in each of the plurality of subpixels SP, can be used as the driver element of the display device 100. Transistor 120 can be, for example, a thin-film transistor (TFT), an N-channel metal-oxide-semiconductor transistor (NMOS), a P-channel metal-oxide-semiconductor transistor (PMOS), a complementary metal-oxide-semiconductor transistor (CMOS), a field-effect transistor (FET), or the like. However, the present disclosure is not limited to this. In the following description, it is assumed that transistor 120 is a thin-film transistor. However, the present disclosure is not limited to this.

[0040] Transistor 120 comprises an active layer 121, a gate electrode 122, a source electrode 123, and a drain electrode 124. The in Fig. The transistor 120 shown in Figure 2 is a thin-film transistor with a top-gate structure, in which the gate electrode 122 is arranged on the active layer 121. However, the present disclosure is not limited to this. The transistor 120 can also be implemented as a thin-film transistor with a bottom-gate structure.

[0041] The active layer 121 of transistor 120 is arranged on the buffer layer 111. The active layer 121 is a region in which a channel is formed when transistor 120 is operating. The active layer 121 can be made of an oxide semiconductor, amorphous silicon (a-Si), polycrystalline silicon (poly-Si), an organic semiconductor, or the like. However, the present disclosure is not limited to these.

[0042] The gate insulating layer 112 is arranged on the active layer 121. The gate insulating layer 112 can be implemented as a single layer or as a multilayer made of silicon nitride (SiNx) or silicon oxide (SiOx), which is an inorganic material. The gate insulating layer 112 has contact holes through which the source electrode 123 and the drain electrode 124 are in contact with a source region and a drain region of the active layer 121, respectively. As shown in Fig. As shown in Figure 2, the gate insulating layer 112 can be formed over the entire surface of the lower substrate 110 or be structured such that it has the same width as the gate electrode 122. However, the present disclosure is not limited to this.

[0043] The gate electrode 122 is arranged on the gate insulating layer 112. The gate electrode 122 is located on the gate insulating layer 112 and overlaps the channel region of the active layer 121. The gate electrode 122 can be made of various metallic materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and an alloy of two or more of these metallic materials. Alternatively, the gate electrode 122 can be configured as a multilayer of various metallic materials, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and an alloy of two or more of these metallic materials. However, the present disclosure is not limited to these possibilities.

[0044] The intermediate insulating layer 113 is arranged on the gate electrode 122. The intermediate insulating layer 113 can be implemented as a single layer or as a multilayer made of silicon nitride (SiNx) or silicon oxide (SiOx), which is an inorganic material. The intermediate insulating layer 113 has contact holes through which the source electrode 123 and the drain electrode 124 are in contact with the source region and the drain region, respectively, of the active layer 121.

[0045] The source electrode 123 and the drain electrode 124 are arranged on the interlayer insulating layer 113. The source electrode 123 and the drain electrode 124 are electrically connected to the active layer 121 via the contact holes of the gate insulating layer 112 and the contact holes of the interlayer insulating layer 113. The source electrode 123 and the drain electrode 124 can be made of different metallic materials, e.g., molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and an alloy of two or more of these metallic materials. Alternatively, the source electrode 123 and the drain electrode 124 can each be configured as a multilayer made of different metallic materials. B. Molybdenum (Mo), Aluminium (Al), Chromium (Cr), Gold (Au), Titanium (Ti), Nickel (Ni), Neodymium (Nd), Copper (Cu) and an alloy of two or more of these metallic materials.However, the present disclosure is not limited to that.

[0046] To simplify the description, Fig. 2. The driver transistor is among the various transistors 120 contained in the display device 100. However, other transistors, such as a switching transistor, may also be arranged.

[0047] With reference to Fig. 2. The passivation layer 114 is arranged on the transistor 120 to protect it. The passivation layer 114 has a contact hole through which the drain electrode 124 of the transistor 120 is exposed. Fig. Figure 2 shows that the contact hole in the passivation layer 114 is formed to expose the drain electrode 124. However, a contact hole can also be formed to expose the source electrode 123. The passivation layer 114 can be a single layer or a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx). However, according to the embodiments, the passivation layer 114 may be absent.

[0048] The coating layer 115 for planarizing an upper section of the transistor 120 is arranged on the passivation layer 114. The coating layer 115 has a contact hole through which the drain electrode 124 of the transistor 120 is exposed. Fig. Figure 2 shows that the contact hole in the coating layer 115 is formed to expose the drain electrode 124. However, a contact hole can also be formed to expose the source electrode 123. The coating layer 115 can be made of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene, and a photoresist. However, the present disclosure is not limited to these.

[0049] The coating layer 115 can have a first upper surface 115a and a second upper surface 115b, which is inclined with respect to the first upper surface 115a. The first upper surface 115a is a surface of the upper surface of the coating layer 115 that is designed as a planar surface, and the second upper surface 115b is a surface of the upper surface of the coating layer 115 that is designed as a curved surface.

[0050] Meanwhile, the second upper surfaces 115b can be arranged such that they are inclined in different directions in regions corresponding to one subpixel SP and another adjacent subpixel SP. Therefore, a groove formed when the curved surfaces of the second upper surfaces 115b, inclined in different directions, meet, can be located in the coating layer 115, which corresponds to a region between the plurality of subpixels SP. The second upper surface 115b can, for example, be formed by removing a portion of the coating layer 115. However, the present disclosure is not limited to this.

[0051] The organic light-emitting element 140 is arranged on the coating layer 115. The organic light-emitting elements 140 comprise the first electrodes 141-1, 141-2, and 141-3, which are formed on the coating layer 115 and electrically connected to the drain electrodes 124 of the transistors 120; the light-emitting parts 142, which are arranged on the first electrodes 141-1, 141-2, and 141-3; and the second electrodes 143, which are formed on the light-emitting parts 142. In this case, the first electrodes 141-1, 141-2, and 141-3 can be anode electrodes, and the second electrode 143 can be a cathode electrode.

[0052] The first electrodes 141-1, 141-2 and 141-3 are arranged on the coating layer 115 and are electrically connected to the drain electrodes 124 of the transistors 120 via the contact holes formed in the passivation layer 114 and the coating layer 115. Therefore, the organic light-emitting element 140 can be connected to the transistor 120.

[0053] Fig. Figure 2 shows that the first electrodes 141-1, 141-2, and 141-3 are electrically connected to the drain electrodes 124 of the transistors 120 via the contact holes. However, the first electrodes 141-1, 141-2, and 141-3 can also be connected to the source electrodes 123 of the transistors 120 via contact holes, depending on the type of transistor 120, the method for designing the driver circuit, and the like.

[0054] The first electrodes 141-1, 141-2 and 141-3 in the majority of subpixels SP can each have a reflective layer 141M and a transparent conductive layer 141T arranged on the reflective layer 141M.

[0055] The reflective layer 141M is arranged on the top layer 115 and electrically connected to the drain electrode 124 through the contact holes formed in the passivation layer 114 and the top layer 115. The reflective layer 141M is arranged such that the light emitted by the light-emitting part 142 can propagate towards the top of the display device 100. The reflective layer 141M can, for example, be made of a reflective metallic material. However, the present disclosure is not limited to this.

[0056] The reflective layer 141M comprises a first section 141M1 and a second section 141M2.

[0057] The first section 141M1 of the reflective layer 141M is arranged on the first upper surface 115a of the coating layer 115 and is positioned such that it adjoins the transparent conductive layer 141T. Since the first section 141M1 of the reflective layer 141M is arranged on the first upper surface 115a of the coating layer 115, which is designed as a flat surface, the first section 141M1 of the reflective layer 141M can have a planar shape corresponding to the shape of the first upper surface 115a.

[0058] The second section 141M2 of the reflective layer 141M can be arranged on the second upper surface 115b of the coating layer 115 and spaced apart from the transparent conductive layer 141T. Since the second section 141M2 of the reflective layer 141M is arranged on the second upper surface 115b, including a curved surface, the second section 141M2 of the reflective layer 141M can have a curved shape corresponding to a shape of the second upper surface 115b. Therefore, the second section 141M2 of the reflective layer 141M can be configured to reflect light toward another subpixel SP adjacent to the subpixel SP in which the corresponding reflective layer 141M is arranged.

[0059] Meanwhile, the second section 141M2 of the reflective layer 141M can be a section extending from the first section 141M1 of the reflective layer 141M, which is located on the first upper surface 115a of the coating layer 115, to the second upper surface 115b of the coating layer 115. The first section 141M1 and the second section 141M2 of the reflective layer 141M can be integrated. However, the present disclosure is not limited to this.

[0060] The transparent conductive layer 141T can be made of a transparent conductive material with a high work function to provide positive holes to the light-emitting part 142 and to emit the light emitted by the light-emitting part 142. For example, the first electrodes 141-1, 141-2, and 141-3 can each be made of a transparent conductive oxide based on indium tin oxide (ITO), indium zinc oxide (IZO), indium tin-zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (TO), respectively. However, the present disclosure is not limited to these.

[0061] The transparent conductive layer 141T comprises a first section 141T1 and a second section 141T2.

[0062] The first section 141T1 of the transparent conductive layer 141T is arranged such that it adjoins the reflective layer 141M. The first section 141T1 of the transparent conductive layer 141T is arranged on the first section 141M1 of the reflective layer 141M. The first section 141T1 of the transparent conductive layer 141T can have a planar shape corresponding to a shape of the first section 141M1 of the reflective layer 141M.

[0063] The second section 141T2 of the transparent conductive layer 141T is arranged such that it is spaced apart from the reflective layer 141M. The bank 116 is arranged between the second section 141M2 of the reflective layer 141M and the second section 141T2 of the transparent conductive layer 141T. Therefore, the second section 141T2 of the transparent conductive layer 141T can be arranged such that it is spaced apart from the reflective layer 141M.

[0064] Meanwhile, the second section 141T2 of the transparent conductive layer 141T can be a section extending from the first section 141T1 of the transparent conductive layer 141T, which is arranged on the first section 141M1 of the reflective layer 141M, to an upper surface of the bank 116. The first section 141T1 and the second section 141T2 of the transparent conductive layer 141T can be integrated. However, the present disclosure is not limited to this.

[0065] With reference to Fig. 2. The second section 141T2 of the transparent conductive layer 141T can be configured such that the light reflected from the second section 141M2 of the reflective layer 141M of another subpixel SP adjacent to the subpixel SP in which the corresponding transparent conductive layer 141T is located reaches the second section 141T2 of the transparent conductive layer 141T. For example, second light L2, emitted by the light-emitting part 142 adjacent to the second section 141T2 of the transparent conductive layer 141T, can be reflected by the second section 141M2 of the reflective layer 141M in another adjacent subpixel SP and reach the second section 141T2 of the transparent conductive layer 141T, so that the second light L2 can be emitted by the subpixel SP in which the corresponding transparent conductive layer 141T is located.

[0066] The first electrodes 141-1, 141-2, and 141-3 of the first subpixel SP1, the second subpixel SP2, and the third subpixel SP3 contain different numbers of transparent conductive layers 141T. Therefore, the transparent conductive layers 141T contained in the first electrodes 141-1, 141-2, and 141-3 can have different thicknesses in the first subpixel SP1, the second subpixel SP2, and the third subpixel SP3.

[0067] Specifically, the first electrode 141-1 of the first subpixel SP1 comprises the reflective layer 141M, a second transparent conductive layer 141Tb arranged on the reflective layer 141M, a third transparent conductive layer 141Tc arranged on the second transparent conductive layer 141Tb, and a first transparent conductive layer 141Ta arranged on the third transparent conductive layer 141Tc. The first electrode 141-2 of the second subpixel SP2 comprises the reflective layer 141M, the second transparent conductive layer 141Tb arranged on the reflective layer 141M, and the first transparent conductive layer 141Ta arranged on the second transparent conductive layer 141Tb. The first electrode 141-3 of the third subpixel SP3 comprises the reflective layer 141M and the first transparent conductive layer 141Ta, which is arranged on the reflective layer 141M.

[0068] Therefore, the first electrodes 141-1, 141-2, and 141-3 can have different thicknesses in the first subpixel SP1, the second subpixel SP2, and the third subpixel SP3. For example, if the first subpixel SP1 is a red pixel, the second subpixel SP2 is a green pixel, and the third subpixel SP3 is a blue pixel, the thicknesses of the first electrodes 141-1, 141-2, and 141-3 can be configured such that the first electrode 141-1 of the first subpixel SP1 can be thicker than the first electrodes 141-2 and 141-3 of the second and third subpixels SP2 and SP3, respectively, and the first electrode 141-2 of the second subpixel SP2 can be thicker than the first electrode 141-3 of the third subpixel SP3.Therefore, the first electrodes 141-1, 141-2 and 141-3 can have micro-cavity structures in which light with a wavelength corresponding to the light emitted by the corresponding subpixel SP can be amplified in the first subpixel SP1, the second subpixel SP2 and the third subpixel SP3.

[0069] The banks 116 are arranged on the first electrodes 141-1, 141-2, and 141-3 and the coating layer 115. The banks 116 can define the light-emitting areas by covering the edges of the first electrodes 141-1, 141-2, and 141-3 of the organic light-emitting elements 140. The banks 116 can be arranged between adjacent subpixels SP and reduce color mixing of the light rays emitted by the organic light-emitting elements 140 in the majority of subpixels SP.

[0070] Bank 116 is located between the second section 141T2 of the transparent conductive layer 141T and the second section 141M2 of the reflective layer 141M, which are the edges of the first electrodes 141-1, 141-2 and 141-3 between the majority of subpixels SP.

[0071] The upper surface of bank 116 is arranged to have a curved surface. Furthermore, the transparent conductive layer 141T, which is arranged on the upper surface of bank 116, can be arranged to have a curved surface along the upper surface of bank 116. Therefore, the second section 141T2 of the transparent conductive layer 141T can be configured such that the light reflected from the second section 141M2 of the reflective layer 141M of another subpixel SP, which is adjacent to the subpixel SP in which the corresponding transparent conductive layer 141T is arranged, reaches the second section 141T2 of the transparent conductive layer 141T.

[0072] Bank 116 can be made from an organic material. For example, Bank 116 can be made from polyimide resin, acrylic resin, or benzocyclobutene resin. However, the present disclosure is not limited to these.

[0073] The light-emitting parts 142 are arranged on the banks 116 and the transparent conductive layers 141T of the first electrodes 141-1, 141-2, and 141-3. For example, the light-emitting part 142 can be a light-emitting layer that emits light of any color from red, green, blue, and white. Furthermore, the light-emitting part 142 can comprise various layers such as a hole transport layer, a hole injection layer, a hole junction, an electron injection layer, an electron junction, and an electron transport layer. However, the present disclosure is not limited to these.

[0074] The second electrode 143 is arranged on the light-emitting part 142. The second electrode 143 can supply electrons to the light-emitting part 142. The second electrode 143 can be made of an electrically conductive material with a low work function. The second electrode 143 can be configured to allow the light emitted by the light-emitting part 142 to propagate towards the top of the display device 100. For example, the second electrode 143 can be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), or an alloy thereof. However, the present disclosure is not limited to these.

[0075] Meanwhile, an inorganic insulating layer can also be arranged on the second electrode 143 to protect it. The inorganic insulating layer can, for example, be implemented as a single layer or as a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx). However, the present disclosure is not limited to this.

[0076] The encapsulation layer 117 is arranged on the organic light-emitting element 140. The encapsulation layer 117 can cover the organic light-emitting element 140. The encapsulation layer 117 can protect the organic light-emitting element 140 from external moisture, oxygen, shocks, and the like. The encapsulation layer 117 can be formed by alternating stacking of a plurality of inorganic layers and a plurality of organic layers. The inorganic layer can be made, for example, of an inorganic material such as silicon nitride (SiNx), silicon dioxide (SiOx), or aluminum oxide (AlOx). The organic layer can be made of an epoxy-based polymer or an acrylic polymer. However, the present disclosure is not limited to these.

[0077] The color filter CF and the black matrix BM are arranged on the encapsulation layer 117.

[0078] The color filter CF can be located in any of the plurality of subpixels SP. The black matrix BM can be located at a boundary between the plurality of subpixels SP. Therefore, the black matrix BM can separate the plurality of subpixels SP and the color filters CF located in the subpixels SP, thereby reducing color mixing between the plurality of subpixels SP.

[0079] For example, if the light emitted by the light-emitting part 142 is white light, the color filters CF convert the light emitted by the subpixels SP into red, green, and blue light. For example, a first color filter CF1, located in the first subpixel SP1, which is a red subpixel, can be a red color filter. Furthermore, a second color filter CF2, which is a green color filter, can be located in the second subpixel SP2, which is a green subpixel, and a third color filter CF3, which is a blue color filter, can be located in the third subpixel SP3, which is a blue subpixel. However, the present disclosure is not limited to this.

[0080] The black matrix BM can be made, for example, from chromium (Cr) or other opaque metal films, or from resin. However, the present disclosure is not limited to this.

[0081] The upper substrate 150 is arranged above the color filter CF and the black matrix BM. The upper substrate 150, together with the encapsulation layer 117, can protect the organic light-emitting element 140 from external moisture, oxygen, shocks, and the like. The upper substrate 150 can, for example, be made of a transparent insulating material, and the display device 100 can be configured as a top-emission display device 100. However, the present disclosure is not limited to this.

[0082] The bonding element 118 is arranged between the color filter CF, the black matrix BM, and the upper substrate 150. The bonding element 118 can connect the color filter CF, the black matrix BM, and the upper substrate 150. The bonding element 118 can be made of a material possessing bonding properties. The bonding element 118 can be a thermosetting or naturally curing bonding agent. For example, the bonding element 118 can be an optically clear adhesive (OCA), a pressure-sensitive adhesive (PSA), or the like. However, the present disclosure is not limited to these.

[0083] In the display device 100 according to the embodiment of the present disclosure, the first electrodes 141-1, 141-2, and 141-3 in the plurality of subpixels SP, which emit light beams of different colors, can be arranged such that they have different thicknesses in order to improve the color viewing angle characteristics. Therefore, each plurality of subpixels SP can have a micro-cavity structure corresponding to the light emitted by the respective subpixel SP. The micro-cavity structure is a structure in which the light is repeatedly reflected between the second electrodes 143 and the first electrodes 141-1, 141-2, and 141-3, which are spaced apart from each other by an optical path (optical length) of a specific interval, such that light of a specific wavelength is amplified by constructive interference.Therefore, the light emitted by each of the majority of subpixels SP can be amplified, thereby improving the color viewing angle characteristics of the display device 100.

[0084] For example, a subpixel SP can be configured to have a microcavity structure corresponding to the light emitted by the corresponding subpixel SP through specific intervals between the first electrodes 141-1, 141-2, and 141-3 and the second electrodes 143 of the corresponding subpixel SP. In this case, the specific intervals between the first electrodes 141-1, 141-2, and 141-3 and the second electrodes 143, which allow the subpixel SP to exhibit the microcavity structure, can, for example, be defined as microcavity intervals.

[0085] An interval between the second electrode 143 and the first section 141M1 of the reflective layer 141M, which is arranged in a subpixel SP, can be arranged as a first micro-cavity interval MCI1, through which the light with a wavelength corresponding to the light emitted by the corresponding subpixel SP can be amplified.

[0086] Therefore, first light L1, which is light emitted by the light-emitting part 142 adjacent to the first section 141T1 of the transparent conductive layer 141T in a subpixel SP, can be amplified by constructive interference while being repeatedly reflected through the first micro-cavity interval MCI1 between the second electrode 143 and the first section 141M1 of the reflective layer 141M, which is located in the same subpixel SP as the corresponding transparent conductive layer 141T.

[0087] An interval between the second electrode 143, which is arranged in a subpixel SP, and the second section 141M2 of the reflective layer 141M, which is arranged in another subpixel SP adjacent to the corresponding subpixel, can be arranged as a second micro-cavity interval MCI2, through which the light with a wavelength corresponding to the light emitted by the corresponding subpixel SP can be amplified.

[0088] Therefore, the second light L2, which is light emitted by the light-emitting part 142 adjacent to the second section 141T2 of the transparent conductive layer 141T, can be amplified by constructive interference as it is repeatedly reflected between the second electrode 143, which is located in a subpixel SP, and the second section 141M2 of the reflective layer 141M, which is located in another subpixel SP adjacent to the corresponding subpixel SP.

[0089] In the display device 100 according to the embodiment of the present disclosure, the first micro-cavity interval MCI1 can differ from the second micro-cavity interval MCI2. For example, as in Fig. As shown in Figure 2, the first microcavity interval MCI1 is smaller than the second microcavity interval MCI2. Therefore, the second light L2, which is amplified by the second microcavity interval MCI2 (which is larger than the first microcavity interval MCI1), travels along the optical path with a larger interval compared to the first light L1, which is amplified by the first microcavity interval MCI1, so that the second light L2 may have a lower light intensity than the first light L1.

[0090] The following describes the light intensities of the first light L1 and the second light L2 with respect to the viewing angles of the display device 100 according to the embodiment of the present disclosure with reference to Fig. 3 described in detail.

[0091] Fig. Figure 3 is a diagram illustrating the light intensities of the first light and the second light in relation to the viewing angles of the display device according to the embodiment of the present disclosure. In the diagram of Fig. Figure 3 shows the x-axis representing the viewing angle θ of the first light L1 and the second light L2 when the mean viewing angles of the first light L1 and the second light L2 are set to 0°. The light intensities are the light intensities of the first light L1 and the second light L2 with respect to the viewing angle θ, based on the assumption that the light intensity at the mean viewing angle (0°) of the first light L1 is set to 100.

[0092] With reference to Fig. 3. The light intensity at the mean viewing angle (0°) of the first light L1, which is the light emitted by the light-emitting part 142 adjacent to the first section 141T1 of the transparent conductive layer 141T, is 100. Therefore, the highest light intensity is achieved at the mean viewing angle (0°) of the first light L1.

[0093] Furthermore, it can be seen that the light intensity of the first light L1 decreases when the viewing angle θ changes from the mean viewing angle (0°), so that the light intensity decreases to 0 at a viewing angle of -90° and 90° of the first light L1.

[0094] The second light L2, which is the light emitted by the light-emitting part 142 adjacent to the second section 141T2 of the transparent conductive layer 141T, has a luminous intensity of 60 at the mean viewing angle (0°). Therefore, it can be seen that the second light L2 has a lower luminous intensity at the mean viewing angle (0°) than the first light L1. For example, the intensity of the first light L1 at the mean viewing angle (0°) may be higher than the intensity of the second light L2 at the mean viewing angle (0°).

[0095] Furthermore, the light intensity of the second light L2 decreases when the viewing angle θ changes from the mean viewing angle (0°), and the light intensity of the second light L2 decreases to 40 at the viewing angles of -90° and 90°.

[0096] However, in the diagram representing a distribution of particular wavelengths, a distribution width corresponding to half the maximum value can be referred to as a full width at half maximum (FWHM). In this context, with reference to Fig. 3. It can be seen that a full width at half the maximum FWHM1 of the first light L1, which is a width of the distribution corresponding to 1 / 2 of the maximum intensity of the first light L1, is smaller than a full width at half the maximum FWHM2 of the second light L2, which is a width of the distribution corresponding to 1 / 2 of the maximum intensity of the second light L2. In particular, in the distribution where the light intensity corresponding to 1 / 2 of the maximum intensity of the first light L1 and the second light L2 is 50, the full width at half the maximum FWHM1 of the first light L1 can be smaller than the full width at half the maximum FWHM2 of the second light L2.

[0097] Meanwhile, it can be seen that the second light L2 has a smaller change in light intensity with respect to the change in viewing angle than the first light L1, because a value of the change in light intensity of the first light L1 is 100 and a value of the change in light intensity of the second light L2 is 20 when the viewing angle changes from the mean viewing angle (0°) to the viewing angles of -90° and 90°.

[0098] The display device with the micro-cavity structure has a design in which light is amplified by constructive interference through repeated reflection between the first and second electrodes, which are aligned to have the micro-cavity interval. However, the light can have a high degree of straightness as its intensity increases. Therefore, as the straightness increases with increasing light intensity, the viewing angle at which the light can be detected may decrease. Because the light is amplified in the display device with the micro-cavity structure, it is emitted at a high intensity, thus reducing the viewing angle at which the light emitted by the display device can be detected. For example, the light intensity of the light emitted by the display device may decrease as the viewing angle changes from the average viewing angle.Therefore, a problem can arise in which the luminance of the emitted light deteriorates and the color coordinates change when the viewing angle changes from the mean viewing angle of the light emitted by the display device. Furthermore, the display quality of the display device can also deteriorate due to changes in luminance and color coordinates caused by the change in viewing angle.

[0099] Therefore, in the display device 100 according to the embodiment of the present disclosure, a portion of the light emitted by a subpixel SP is configured to improve the light intensity at the mean viewing angle (0°), and another portion of the light emitted by a subpixel SP is configured to minimize the change in light intensity in accordance with the change in viewing angle θ, so that the luminous efficacy of the display device 100 can be improved and the deterioration of the luminance and the change in the color coordinate in accordance with the viewing angle can be minimized.

[0100] In particular, in the display device 100 according to the embodiment of the present disclosure, the first light L1, which is the light emitted by the light-emitting part 142 adjacent to the first section 141T1 of the transparent conductive layer 141T, is amplified by the first micro-cavity interval MCI1, which is the interval between the second electrode 143 and the first section 141M1 of the reflective layer 141M arranged in the corresponding subpixel SP.Furthermore, the second light L2, which is the light emitted by the light-emitting part 142 adjacent to the second section 141T2 of the transparent conductive layer 141T, is amplified by the second microcavity interval MCI2, which is the interval between the second electrode 143 and the second section 141M2 of the reflective layer 141M, located in another subpixel SP adjacent to the corresponding subpixel. In this case, the second light L2, amplified by the second microcavity interval MCI2, which is larger than the first microcavity interval MCI1, travels along the optical path with a larger interval compared to the first light L1, which is amplified by the first microcavity interval MCI1, so that the second light L2 may have a lower luminous intensity than the first light L1.Therefore, the first light L1, which has a relatively high luminous intensity, improves the straightness of the light, thus improving the light intensity at the mean viewing angle (0°). Furthermore, the second light L2, which has a relatively low luminous intensity, can have a lower straightness, so that the second light L2 can also be detected at a relatively large viewing angle, and the change in light intensity can be minimized in accordance with the change in viewing angle θ.Thus, the light intensity of the first light L1 emitted by the subpixel SP can be increased, thereby improving the luminous efficacy of the display device 100, and the second light L2 can be configured to compensate for changes in light intensity in accordance with changes in the viewing angle of the first light L1, thus minimizing the degradation of luminance and the change in color coordinates in accordance with the viewing angle. Therefore, in the display device 100 according to the embodiment of the present disclosure, a portion of the light emitted by a subpixel SP is configured to improve the light intensity at the mean viewing angle (0°), and another portion of the light emitted by a subpixel SP is configured to minimize the change in light intensity in accordance with changes in the viewing angle θ.In this way, the light output of the display device 100 can be improved, and the deterioration of the luminance and the change in the color coordinates in accordance with the viewing angle can be minimized, which can improve the display quality of the display device 100 and provide the highly efficient, energy-saving display device 100.

[0101] Below, a display device according to another embodiment of the present disclosure is described with reference to the Fig. 4A and Fig. 4B described in detail.

[0102] Fig. Figure 4A is a cross-sectional view of a display device according to another embodiment of the present disclosure. Fig. 4B is an enlarged view of area IVb in Fig. 4A. A display unit 400 in the Fig. 4A and Fig. 4B is essentially identical in design to display unit 100 in the Fig. 1 to 3, with the exception of a coating layer 415, of the first electrodes 441-1, 441-2 and 441-3, and of bank 116. Therefore, a repeated description of the identical components is omitted or can be kept brief.

[0103] Firstly, with reference to Fig. 4A, the coating layer 415 having a first upper surface 415a and a second upper surface 415b which is inclined relative to the first upper surface 415a (see Fig. 4A). In this case, the first upper surface 415a is a surface formed as a flat surface of an upper surface of the coating layer 415, and the second upper surface 415b is a surface with a flat surface inclined with respect to the first upper surface 415a.

[0104] Meanwhile, the second upper surfaces 415b can be arranged such that they are inclined in different directions in regions corresponding to one subpixel SP and another adjacent subpixel SP. Therefore, a groove formed when the flat surfaces of the second upper surfaces 415b, inclined in different directions, meet, can be arranged in the coating layer 415, corresponding to a region between the plurality of subpixels SP.

[0105] The first electrodes 441-1, 441-2 and 441-3 are arranged on the coating layer 415. The first electrodes 441-1, 441-2 and 441-3 can each comprise a reflective layer 441M arranged on the coating layer 415 and a transparent conductive layer 441T arranged on the reflective layer 441M.

[0106] The reflective layer 441M comprises a first section 441M1, which is arranged on the first upper surface 415a of the coating layer 415, and a second section 441M2, which is arranged on the second upper surface 415b of the coating layer 415. Because the first section 441M1 of the reflective layer 441M is arranged on the first upper surface 415a of the coating layer 415, the first section 441M1 of the reflective layer 441M can have a planar shape corresponding to a shape of the first upper surface 415a. Since the second section 441M2 of the reflective layer 441M is arranged on the second upper surface 415b, which is the flat surface inclined with respect to the first upper surface 415a, the second section 441M2 of the reflective layer 441M can have a planar shape inclined with respect to the first upper surface 415a along the second upper surface 415b.Therefore, the second section 441M2 of the reflective layer 441M can be configured to reflect light towards another subpixel SP adjacent to the subpixel SP in which the corresponding reflective layer 441M is located.

[0107] The transparent conductive layer 441T comprises the first section 441T1 and the second section 441T2. The first section 441T1 of the transparent conductive layer 441T is arranged on the first section 441M1 of the reflective layer 441M. The first section 441T1 of the transparent conductive layer 441T can have a planar shape corresponding to the shape of the first section 441M1 of the reflective layer 441M. The second section 441T2 of the transparent conductive layer 441T can be arranged to be spaced apart from the reflective layer 441M. With reference to Fig. 4A a second section 441T2 of the transparent conductive layer 441T, which is arranged in a subpixel SP from the plurality of subpixels SP, can be arranged such that it runs parallel to the second section 441M2 of the reflective layer 441M, which is arranged in another adjacent subpixel SP.

[0108] A bank 416 is arranged between the second section 441M2 of the reflective layer 441M and the second section 441T2 of the transparent conductive layer 441T. With reference to Fig. 4A An upper surface of the bank 416 can be arranged such that it has a flat surface inclined with respect to the first upper surface 415a of the coating layer 415. Therefore, the second section 441T2 of the transparent conductive layer 441T, which is arranged on the inclined upper surface of the bank 416, can be arranged such that it runs parallel to the second section 441M2 of the reflective layer 441M, which is arranged in another subpixel SP adjacent to the corresponding subpixel SP.

[0109] The upper surface of the bench 416 can have a flat surface that is inclined with respect to the first upper surface 415a of the coating layer 415 and has a conical shape. For example, the bench 416 can be made of an inorganic material with an easily controllable shape. However, the present disclosure is not limited to this.

[0110] In this case, the inclination of the second upper surface 415b of the coating layer 415 and the inclination of the upper surface of the bank 416 can be between 30° and 45°. However, the present disclosure is not limited to this. For example, if the inclination of the second upper surface of the coating layer and the inclination of the upper surface of the bank exceed 45°, the thickness of the light-emitting portion arranged above the bank and made of an organic material may be uneven due to the steeply inclined upper surface of the bank. If the inclination of the second upper surface of the coating layer and the inclination of the upper surface of the bank are less than 30°, it is difficult for the second portion of the reflective layer to reflect light toward another subpixel adjacent to the subpixel in which the corresponding reflective layer is arranged.Therefore, the inclination of the second upper surface 415b of the coating layer 415 and the inclination of the upper surface of the bank 416 are set to 30° to 45°, so that the thickness of the light-emitting part 142 arranged above the bank 416 can be uniform and the second section 441M2 of the reflective layer 441M can be configured to reflect the light in the direction of another adjacent subpixel SP. However, the present disclosure is not limited thereto.

[0111] An interval between the second electrode 143 and the first section 441M1 of the reflective layer 441M, which is arranged in a subpixel SP, can be arranged as a first micro-cavity interval MCI1, through which the light with a wavelength corresponding to the light emitted by the corresponding subpixel SP can be amplified.

[0112] Therefore, the first light L1, which is light emitted by the light-emitting part 142 adjacent to the first section 441T1 of the transparent conductive layer 441T in a subpixel SP, can be amplified by constructive interference as it is repeatedly reflected between the second electrode 143 and the first section 441M1 of the reflective layer 441M, which is located in the same subpixel SP as the corresponding transparent conductive layer 441T, by the first micro-cavity interval MCI1.

[0113] An interval between the second electrode 143, which is arranged in a subpixel SP, and the second section 441M2 of the reflective layer 441M, which is arranged in another subpixel SP adjacent to the corresponding subpixel, can be arranged as a second micro-cavity interval MCI2, through which the light with a wavelength corresponding to the light emitted by the corresponding subpixel SP can be amplified.

[0114] Therefore, the second light L2, which is light emitted by the light-emitting part 142 adjacent to the second section 441T2 of the transparent conductive layer 441T, can be amplified by constructive interference as it is repeatedly reflected between the second electrode 143, which is located in a subpixel SP, and the second section 441M2 of the reflective layer 441M, which is located in another subpixel SP adjacent to the corresponding subpixel SP.

[0115] The following is an example procedure for setting the second micro-cavity interval MCI2 according to the aspects of the present disclosure with reference to Fig. 4B described in detail.

[0116] In Fig. 4B indicates R1 the width of a region in which the second upper surface 415b of the coating layer 415, corresponding to any subpixel SP, is arranged between the plurality of subpixels SP, R2 indicates a height of a region in which the second upper surface 415b is arranged, R3 indicates a width of the second upper surface 415b, and θ indicates an inclination of the second upper surface 415b.

[0117] With reference to Fig. The inclination θ and width R3 of the second upper surface 415b can be set using the width R1 and height R2 of the region in which the second upper surface 415b is located. For example, if the inclination θ of the second upper surface 415b is to be set to 30° and the width R3 of the second upper surface 415b is to be 1408 nm, the width R1 of the region in which the second upper surface 415b is located can be calculated as 1219 nm, which corresponds to a value of 1408 nm × cos30°, and the height R2 of the region in which the second upper surface 415b is located can be calculated as 704 nm, which corresponds to a value of 1408 nm × sin30°.Therefore, the inclination θ of the second upper surface 415b can be set to 30° and the width R3 of the second upper surface 415b to 1408 nm by a method of removing part of the upper surface of the coating layer 415 to set a width of 1219 nm and a height of 704 nm.

[0118] Furthermore, the second micro-cavity interval MCI2 can be adjusted using the inclination θ of the second upper surface 415b and the width R3 of the second upper surface 415b. For example, to adjust the second micro-cavity interval MCI2 in the display device, where the thickness of the transparent conductive layer 441T is 84 nm, the thickness of the light-emitting part 142 is 300 nm, and the inclination θ of the second upper surface 415b is 30°, to 1792 nm, the width R3 of the second upper surface 415b is adjusted by reducing the thickness of the transparent conductive layer 441T and the thickness of the light-emitting part 142 from the second micro-cavity interval MCI2, where the width R3 of the second upper surface 415b can be calculated as a value of (1792 nm - 84 nm - 300 nm) × sec30°, i.e., 1626 nm.

[0119] In the display device 400 according to another embodiment of the present disclosure, a portion of the light emitted by a subpixel SP is configured to improve the light intensity at the mean viewing angle (0°), and another portion of the light emitted by a subpixel SP is configured to minimize the change in light intensity in accordance with the change in viewing angle θ, so that the luminous efficacy of the display device 400 can be improved and the deterioration of the luminance and the change in the color coordinate in accordance with the viewing angle can be minimized.

[0120] In particular, in the display device 400 according to another embodiment of the present disclosure, the first light L1, which is the light emitted by the light-emitting part 142 adjacent to the first section 441T1 of the transparent conductive layer 441T, is amplified by the first micro-cavity interval MCI1, which is the interval between the second electrode 143 and the first section 441M1 of the reflective layer 441M, which is arranged in the corresponding subpixel SP.Furthermore, the second light L2, which is the light emitted by the light-emitting part 142 adjacent to the second section 441T2 of the transparent conductive layer 441T, is amplified by the second microcavity interval MCI2, which is the interval between the second electrode 143 and the second section 441M2 of the reflective layer 441M, located in another subpixel SP adjacent to the corresponding subpixel. In this case, the second light L2, amplified by the second microcavity interval MCI2, which is larger than the first microcavity interval MCI1, travels along the optical path with a larger interval compared to the first light L1, which is amplified by the first microcavity interval MCI1, so that the second light L2 may have a lower luminous intensity than the first light L1.Therefore, the first light L1, which has a relatively high luminous intensity, improves the straightness of the light, thus improving the light intensity at the mean viewing angle (0°). Furthermore, the second light L2, which has a relatively low luminous intensity, can have a lower straightness, so that the second light L2 can also be detected at a relatively large viewing angle, and the change in light intensity can be minimized in accordance with the change in viewing angle θ.Thus, the light intensity of the first light L1 emitted by the subpixel SP can be increased, thereby improving the luminous efficacy of the display device 400, and the second light L2 can be configured to compensate for changes in light intensity in accordance with changes in the viewing angle of the first light L1, thus minimizing the degradation of luminance and the change in color coordinates in accordance with the viewing angle. Therefore, in the display device 400 according to another embodiment of the present disclosure, a portion of the light emitted by a subpixel SP is configured to improve the light intensity at the mean viewing angle (0°), and another portion of the light emitted by a subpixel SP is configured to minimize the change in light intensity in accordance with changes in the viewing angle θ.Accordingly, the luminous efficacy of the display device 400 can be improved, and the deterioration of the luminance and the change in the color coordinates in accordance with the viewing angle can be minimized, which can improve the display quality of the display device 400 and provide the highly efficient, energy-saving display device 400.

[0121] Below, a display device according to a further embodiment of the present disclosure is described with reference to Fig. 5 described in detail.

[0122] Fig. 5 is a cross-sectional view of a display device according to a further embodiment of the present disclosure. A display device 500 in Fig. The configuration of display unit 5 is essentially identical to that of display unit 100. Fig. 1 to 3, with the exception of a coating layer 515, of first electrodes 541-1, 541-2 and 541-3 and of the bank 516. Therefore, a repeated description of the identical components is omitted or can be kept brief.

[0123] With reference to Fig. The coating layer 515, with a flat upper surface, is arranged between the majority of transistors 120 and the majority of first electrodes 541-1, 541-2, and 541-3. Therefore, all lower surfaces of the majority of first electrodes 541-1, 541-2, and 541-3 can be arranged on the same plane on the upper surface of the coating layer 515.

[0124] The first electrodes 541-1, 541-2 and 541-3 can each comprise a reflective layer 541M arranged on the coating layer 515 and a transparent conductive layer 541T arranged on the reflective layer 541M.

[0125] With reference to Fig. In Figure 5, the reflective layer 541M comprises a first section 541M1 configured to be adjacent to the transparent conductive layer 541T, and a second section 541M2 spaced apart from the transparent conductive layer 541T. The transparent conductive layer 541T comprises a first section 541T1 configured to be adjacent to the reflective layer 541M, and a second section 541T2 spaced apart from the reflective layer 541M. For example, the first section 541M1 of the reflective layer 541M may be adjacent to the first section 541T1 of the transparent conductive layer 541T, and the second section 541M2 of the reflective layer 541M may be spaced apart from the transparent conductive layer 541T.

[0126] A bank 516 is arranged between the second section 541M2 of the reflective layer 541M and the second section 541T2 of the transparent conductive layer 541T. Therefore, the second section 541M2 of the reflective layer 541M and the second section 541T2 of the transparent conductive layer 541T can be arranged such that they are at a predetermined interval from each other.

[0127] Meanwhile, the bank 516 can be configured to define the second micro-cavity interval MCI2 together with the second section 541T2 of the transparent conductive layer 541T and the light-emitting part 142. In this case, the refractive index of the bank 516 can be 1.8 or higher. For example, if the refractive indices of the materials forming the transparent conductive layer 541T and the light-emitting part 142 arranged above the bank 516 are 1.7 to 1.8, the bank 516 can be made of a material with a refractive index of 1.8 or higher. However, the present disclosure is not limited to this.

[0128] An interval between the second electrode 143 and the first section 541M1 of the reflective layer 541M, which is arranged in a subpixel SP, can be arranged as a first micro-cavity interval MCI1, through which the light with a wavelength corresponding to the light emitted by the corresponding subpixel SP can be amplified.

[0129] Therefore, the first light L1, which is light emitted by the light-emitting part 142 adjacent to the first section 541T1 of the transparent conductive layer 541T in a subpixel SP, can be amplified by constructive interference as it is repeatedly reflected between the second electrode 143 and the first section 541M1 of the reflective layer 541M, which is located in the same subpixel SP as the corresponding transparent conductive layer 541T, by the first micro-cavity interval MCI1.

[0130] An interval between the second electrode 143 and the second section 541M2 of the reflective layer 541M, which is arranged in a subpixel SP, can be arranged as a second micro-cavity interval MCI2, through which the light with a wavelength corresponding to the light emitted by the corresponding subpixel SP can be amplified.

[0131] Therefore, the second light L2, which is light emitted by the light-emitting part 142 adjacent to the second section 541T2 of the transparent conductive layer 541T, can be amplified by constructive interference as it is repeatedly reflected between the second electrode 143 and the second section 541M2 of the reflective layer 541M, which is arranged in a subpixel SP.

[0132] In the display device 500 according to a further embodiment of the present disclosure, a portion of the light emitted by a subpixel SP is configured to improve the light intensity at the mean viewing angle (0°), and another portion of the light emitted by a subpixel SP is configured to minimize the change in light intensity in accordance with the change in viewing angle θ, so that the luminous efficacy of the display device 500 can be improved and the deterioration of the luminance and the change in the color coordinate in accordance with the viewing angle can be minimized.

[0133] In particular, in the display device 500 according to a further embodiment of the present disclosure, the first light L1, which is the light emitted by the light-emitting part 142 adjacent to the first section 541T1 of the transparent conductive layer 541T, is amplified by the first micro-cavity interval MCI1, which is the interval between the second electrode 143 and the first section 541M1 of the reflective layer 541M, which is arranged in the corresponding subpixel SP. Furthermore, the second light L2, which is the light emitted by the light-emitting part 142 adjacent to the second section 541T2 of the transparent conductive layer 541T, is amplified by the second micro-cavity interval MCI2, which is the interval between the second electrode 143 and the second section 541M2 of the reflective layer 541M, which is arranged in a subpixel SP.

[0134] In this case, the second light L2, amplified by the second microcavity interval MCI2 (which is larger than the first microcavity interval MCI1), travels along the optical path with a larger interval compared to the first light L1, which is amplified by the first microcavity interval MCI1. Therefore, the second light L2 can have a lower luminous intensity than the first light L1. Consequently, the first light L1, which has a relatively high luminous intensity, improves the straightness of the light, thus increasing the light intensity at the mean viewing angle (0°). Furthermore, the second light L2, which has a relatively low luminous intensity, can exhibit less straightness, allowing it to be detected even at a relatively wide viewing angle, and minimizing the change in light intensity in accordance with the change in viewing angle θ.Thus, the light intensity of the first light L1 emitted by the subpixel SP can be increased, thereby improving the luminous efficacy of the display device 500, and the second light L2 can be configured to compensate for changes in light intensity in accordance with changes in the viewing angle of the first light L1, thus minimizing the degradation of luminance and the change in color coordinates in accordance with the viewing angle. In the display device 500, according to a further embodiment of the present disclosure, a portion of the light emitted by a subpixel SP is configured to improve the light intensity at the mean viewing angle (0°), and another portion of the light emitted by a subpixel SP is configured to minimize the change in light intensity in accordance with changes in the viewing angle θ.Accordingly, the luminous efficacy of the display device 500 can be improved, and the deterioration of the luminance and the change in the color coordinates in accordance with the viewing angle can be minimized, which can improve the display quality of the display device 500 and provide the highly efficient, energy-saving display device 500.

[0135] Below, a display device according to a further embodiment of the present disclosure is described with reference to Fig. 6 described in detail.

[0136] Fig. 6 is a cross-sectional view of a display device according to a further embodiment of the present disclosure. A display device 600 in Fig. The configuration of version 6 is essentially identical to that of display unit 500. Fig. 5, with the exception of the first electrodes 641-1, 641-2 and 641-3, of an additional sample AP, and of one bank 616. Therefore, a repeated description of the identical components is omitted or can be kept brief.

[0137] With reference to Fig. 6 The first electrodes 641-1, 641-2 and 641-3 can each have a reflective layer 641M arranged on the coating layer 515 and a transparent conductive layer 641T arranged on the reflective layer 641M.

[0138] The reflective layer 641M comprises a first section 641M1 configured to be adjacent to the transparent conductive layer 641T, and a second section 641M2 spaced apart from the transparent conductive layer 641T. The transparent conductive layer 641T comprises a first section 641T1 configured to be adjacent to the reflective layer 641M, and a second section 641T2 spaced apart from the reflective layer 641M. For example, the first section 641M1 of the reflective layer 641M can be adjacent to the first section 641T1 of the transparent conductive layer 641T, and the second section 641M2 of the reflective layer 641M can be spaced apart from the transparent conductive layer 641T.

[0139] The additional pattern AP is positioned between the second section 641M2 of the reflective layer 641M and the second section 641T2 of the transparent conductive layer 641T. The additional pattern AP can be configured to define the second microcavity interval MCI2 together with the second section 641T2 of the transparent conductive layer 641T and the light-emitting part 142. Therefore, the second section 641M2 of the reflective layer 641M and the second section 641T2 of the transparent conductive layer 641T can be positioned at a predetermined interval from each other.

[0140] Meanwhile, the additional pattern AP can be made of the same material as the transparent conductive layer 641T. Since the additional pattern AP has the same refractive index as the transparent conductive layer 641T, it is possible to minimize the extent to which the second microcavity interval MCI2 is distorted by a difference in refractive index between the additional pattern AP and the transparent conductive layer 641T. In this case, for example, because the transparent conductive layer 641T can be formed after the additional pattern AP has been arranged, an interface between the additional pattern AP and the transparent conductive layer 641T can exist. However, the present disclosure is not limited to this.

[0141] The bank 616 can be arranged between part of the second section 641T2 of the transparent conductive layer 641T and the light-emitting part 142. Furthermore, the bank 616 can be arranged to surround the lateral surfaces of the first electrodes 641-1, 641-2 and 641-3 and a lateral surface of the additional pattern AP.

[0142] An interval between the second electrode 143 and the first section 641M1 of the reflective layer 641M, which is arranged in a subpixel SP, can be arranged as a first micro-cavity interval MCI1, through which the light with a wavelength corresponding to the light emitted by the corresponding subpixel SP can be amplified.

[0143] Therefore, the first light L1, which is light emitted by the light-emitting part 142 adjacent to the first section 641T1 of the transparent conductive layer 641T in a subpixel SP, can be amplified by constructive interference as it is repeatedly reflected between the second electrode 143 and the first section 641M1 of the reflective layer 641M, which is located in the same subpixel SP as the corresponding transparent conductive layer 641T, by the first micro-cavity interval MCI1.

[0144] An interval between the second electrode 143 and the second section 641M2 of the reflective layer 641M, which is arranged in a subpixel SP, can be arranged as a second micro-cavity interval MCI2, through which the light with a wavelength corresponding to the light emitted by the corresponding subpixel SP can be amplified.

[0145] Therefore, the second light L2, which is light emitted by the light-emitting part 142 adjacent to the second section 641T2 of the transparent conductive layer 641T, can be amplified by constructive interference as it is repeatedly reflected between the second electrode 143 and the second section 641M2 of the reflective layer 641M, which is arranged in a subpixel SP.

[0146] In the display device 600 according to a further embodiment of the present disclosure, a portion of the light emitted by a subpixel SP is configured to improve the light intensity at the mean viewing angle (0°), and another portion of the light emitted by a subpixel SP is configured to minimize the change in light intensity in accordance with the change in viewing angle θ, so that the luminous efficacy of the display device 600 can be improved and the deterioration of the luminance and the change in the color coordinate in accordance with the viewing angle can be minimized.

[0147] In particular, in the display device 600 according to a further embodiment of the present disclosure, the first light L1, which is the light emitted by the light-emitting part 142 adjacent to the first section 641T1 of the transparent conductive layer 641T, is amplified by the first micro-cavity interval MCI1, which is the interval between the second electrode 143 and the first section 641M1 of the reflective layer 641M, which is arranged in the corresponding subpixel SP. Furthermore, the second light L2, which is the light emitted by the light-emitting part 142 adjacent to the second section 641T2 of the transparent conductive layer 641T, is amplified by the second micro-cavity interval MCI2, which is the interval between the second electrode 143 and the second section 641M2 of the reflective layer 641M, which is arranged in a subpixel SP.

[0148] In this case, the second light L2, amplified by the second microcavity interval MCI2 (which is larger than the first microcavity interval MCI1), travels along the optical path with a larger interval compared to the first light L1, which is amplified by the first microcavity interval MCI1. Therefore, the second light L2 can have a lower luminous intensity than the first light L1. Consequently, the first light L1, which has a relatively high luminous intensity, improves the straightness of the light, thus increasing the light intensity at the mean viewing angle (0°). Furthermore, the second light L2, which has a relatively low luminous intensity, can exhibit less straightness, allowing it to be detected even at a relatively large viewing angle and minimizing the change in light intensity in accordance with the change in viewing angle θ.Thus, the light intensity of the first light L1 emitted by the subpixel SP can be increased, thereby improving the luminous efficacy of the display device 600, and the second light L2 can be configured to compensate for changes in light intensity in accordance with changes in the viewing angle of the first light L1, thus minimizing the degradation of luminance and the change in color coordinates in accordance with the viewing angle. Therefore, in the display device 600 according to a further embodiment of the present disclosure, a portion of the light emitted by a subpixel SP is configured to improve the light intensity at the mean viewing angle (0°), and another portion of the light emitted by a subpixel SP is configured to minimize the change in light intensity in accordance with changes in the viewing angle θ.Accordingly, the luminous efficacy of the display device 600 can be improved, and the deterioration of the luminance and the change in the color coordinates in accordance with the viewing angle can be minimized, which can improve the display quality of the display device 600 and provide the highly efficient, energy-saving display device 600.

[0149] The embodiments of the present disclosure can also be described as follows:

[0150] According to one aspect of the present disclosure, a display device may comprise: a substrate on which a plurality of subpixels are arranged; a plurality of transistors, each arranged in the plurality of subpixels on the substrate; a plurality of first electrodes, each arranged on the plurality of transistors, connected to the plurality of transistors, and each having a reflective layer and a transparent conductive layer arranged on the reflective layer; a plurality of light-emitting parts, each arranged on the plurality of first electrodes; and a second electrode, arranged on the plurality of light-emitting parts, in which the transparent conductive layer comprises: a first section configured to adjoin the reflective layer;and a second section spaced from the reflecting layer, in which a micro-cavity interval of light emitted by a first section of the light-emitting part adjacent to the first section of the transparent conductive layer differs from a micro-cavity interval of light emitted by a second section of the light-emitting part adjacent to the second section of the transparent conductive layer.

[0151] The micro-cavity interval of light emitted by the first section of the light-emitting part adjacent to the first section of the transparent conductive layer may be smaller than the micro-cavity interval of light emitted by the second section of the light-emitting part adjacent to the second section of the transparent conductive layer.

[0152] The intensity at a mean viewing angle of the light emitted by the first section of the light-emitting part adjacent to the first section of the transparent conductive layer may be higher than the intensity at a mean viewing angle of the light emitted by the second section of the light-emitting part adjacent to the second section of the transparent conductive layer.

[0153] A full width at half the maximum of the light emitted by the first section of the light-emitting part adjacent to the first section of the transparent conductive layer may be smaller than a full width at half the maximum of the light emitted by the second section of the light-emitting part adjacent to the second section of the transparent conductive layer.

[0154] The display device may further comprise a coating layer arranged between the plurality of transistors and the plurality of first electrodes, having a first upper surface and a second upper surface inclined with respect to the first upper surface.

[0155] The reflective layer can comprise a first section configured to be adjacent to the first section of the transparent conductive layer and located on the first upper surface, and a second section spaced away from the transparent conductive layer and located on the second upper surface.

[0156] A micro-cavity interval of light emitted from the first section of the light-emitting part adjacent to the first section of the transparent conductive layer arranged in a subpixel of the plurality of subpixels can be an interval between the second electrode and the first section of the reflecting layer in which a subpixel is arranged.

[0157] A micro-cavity interval of light emitted from the second section of the light-emitting part adjacent to the second section of the transparent conductive layer located in a subpixel can be an interval between the second electrode located in that one subpixel and the second section of the reflecting layer located in another subpixel adjacent to that one subpixel.

[0158] The display device may further comprise a bank that is arranged between the second section of the reflective layer and the second section of the transparent conductive layer between the majority of subpixels.

[0159] The second upper surface of the coating layer and an upper surface of the bank may have curved surfaces.

[0160] The display device may further comprise a bank that is arranged between the second section of the reflective layer and the second section of the transparent conductive layer between the majority of subpixels.

[0161] The second upper surface of the coating layer and an upper surface of the bank may have flat surfaces that are inclined relative to the first upper surface of the coating layer.

[0162] The second section of the transparent conductive layer, which is arranged in one subpixel from the plurality of subpixels, can be parallel to the second section of the reflective layer, which is arranged in another adjacent subpixel.

[0163] The display device may further comprise a coating layer arranged between the majority of transistors and the majority of first electrodes, having a flat upper surface.

[0164] The reflective layer can be arranged on an upper surface of the coating layer.

[0165] The reflective layer can include a first section configured to be adjacent to the first section of the transparent conductive layer, and a second section spaced apart from the transparent conductive layer.

[0166] A micro-cavity interval of light emitted from the first section of the light-emitting part adjacent to the first section of the transparent conductive layer arranged in a subpixel of the plurality of subpixels can be an interval between the second electrode and the first section of the reflecting layer arranged in a subpixel.

[0167] A micro-cavity interval of light emitted from the second section of the light-emitting part adjacent to the second section of the transparent conductive layer arranged in a subpixel can be an interval between the second electrode and the second section of the reflective layer arranged in a subpixel.

[0168] The display device may further comprise a bank that is arranged between the second section of the reflective layer and the second section of the transparent conductive layer between the majority of subpixels.

[0169] The bank's refractive index can be 1.8 or higher.

[0170] The display device may further comprise an additional pattern arranged between the second section of the transparent conductive layer and the second section of the reflective layer, and a bank arranged to surround a lateral surface of the first electrode and a lateral surface of the additional pattern.

[0171] The additional pattern can be made from the same material as the transparent conductive layer.

[0172] The majority of subpixels can include a first subpixel, a second subpixel, and a third subpixel, which emit light rays of different colors.

[0173] The transparent conductive layers in the first subpixel, the second subpixel, and the third subpixel can have different thicknesses.

[0174] According to one aspect of the present disclosure, a display device may comprise: a plurality of subpixels; a plurality of transistors, each arranged within the plurality of subpixels; a plurality of first electrodes, each arranged on and connected to the plurality of transistors, each comprising a reflective layer and a transparent conductive layer arranged on the reflective layer; a plurality of light-emitting parts, each arranged on the plurality of first electrodes; and a second electrode arranged on the plurality of light-emitting parts, wherein the transparent conductive layer has a first section configured to be adjacent to the reflective layer and a second section spaced apart from the reflective layer, wherein a light,that emitted by a first section of the light-emitting part, adjacent to the first section of the transparent conductive layer, is amplified by a first micro-cavity interval, and that light emitted by a second section of the light-emitting part, adjacent to the second section of the transparent conductive layer, is amplified by a second micro-cavity interval, wherein a portion of the light emitted by one subpixel from the plurality of subpixels is configured to enhance light intensity at a mean viewing angle, and another portion of the light emitted by the one subpixel is configured to minimize a change in light intensity with a change in viewing angle.

[0175] The display device may further comprise a coating layer arranged between the plurality of transistors and the plurality of first electrodes, having a first upper surface and a second upper surface inclined with respect to the first upper surface, the reflective layer comprising: a first section configured to be adjacent to the first section of the transparent conductive layer and located on the first upper surface; and a second section spaced apart from the transparent conductive layer and located on the second upper surface.

[0176] The first microcavity interval can be an interval between the second electrode and the first section of the reflective layer located in one subpixel, and the second microcavity interval can be an interval between the second electrode located in one subpixel and the second section of the reflective layer located in another subpixel adjacent to the first subpixel.

[0177] The display device may further comprise a coating layer arranged between the plurality of transistors and the plurality of first electrodes, having a flat upper surface, wherein the reflective layer is arranged on an upper surface of the coating layer and wherein the reflective layer comprises: a first section configured to be adjacent to the first section of the transparent conductive layer; and a second section spaced apart from the transparent conductive layer.

[0178] The first microcavity interval can be an interval between the second electrode and the first part of the reflective layer located in the one subpixel, and the second microcavity interval can be an interval between the second electrode and the second part of the reflective layer located in the one subpixel.

[0179] Although the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited to them and can be implemented in many different forms without deviating from the technical concept of the present disclosure. Therefore, the embodiments of the present disclosure serve only for illustration and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. It should therefore be understood that the embodiments described above are in every respect illustrative and do not limit the present disclosure. The scope of protection of the present disclosure should be interpreted on the basis of the following claims. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] KR 10-2023-0126895

[0001]

Claims

[1] Display device (100, 400, 500, 600) comprising: a substrate (110) having a plurality of subpixels (SP1, SP2, SP3) arranged on the substrate (110); a plurality of transistors (120) each arranged in the plurality of subpixels (SP1, SP2, SP3) on the substrate (110); a plurality of first electrodes (141-1, 141-2, 141-3; 441-1, 441-2, 441-3; 541-1, 541-2, 541-3; 641-1, 641-2, 641-3), each arranged on the plurality of transistors (120) and connected to the plurality of transistors (120), wherein each of the plurality of first electrodes (141-1, 141-2, 141-3; 441-1, 441-2, 441-3; 541-1, 541-2, 541-3; 641-1, 641-2, 641-3) comprises a reflective layer (141M, 441M, 541M, 641M) and a a transparent conductive layer (141T, 441T, 541T, 641T) arranged on the reflective layer (141M, 441M, 541M, 641M); a plurality of light-emitting parts (142) each arranged on the plurality of first electrodes (141-1, 141-2, 141-3; 441-1, 441-2, 441-3; 541-1, 541-2, 541-3; 641-1, 641-2, 641-3); and a second electrode (143) arranged on the plurality of light-emitting parts (142), wherein the transparent conductive layer (141T, 441T, 541T, 641T) comprises: a first portion (141T1, 441T1, 541T1, 641T1) configured to be adjacent to the reflective layer (141M, 441M, 541M, 641M); and a second portion (141T2, 441T2, 541T2, 641T2) spaced from the reflective layer (141M, 441M, 541M, 641M), wherein each light-emitting part (142) has a first portion adjacent to the first portion (141T1, 441T1, 541T1, 641T1) of the transparent conductive layer (141T, 441T, 541T, 641T) and a second portion adjacent to the second portion (141T2, 441T2, 541T2, 641T2) of the transparent conductive layer (141T, 441T, 541T, 641T), and wherein a micro-cavity interval (MCI1) of the light (L1) emitted from the first portion of the light-emitting part (142) adjacent to the first portion (141T1, 441T1, 541T1, 641T1) of the transparent conductive layer (141T, 441T, 541T, 641T) is different from a micro-cavity interval (MCI2) of the light (L2) emitted from the second portion of the light-emitting part (142) adjacent to the second portion (141T2, 441T2, 541T2, 641T2) of the transparent conductive layer (141T, 441T, 541T, 641T). [2] The display device (100, 400, 500, 600) according to claim 1, wherein the micro-cavity interval (MCI1) of the light (L1) emitted from the first portion of the light-emitting part (142) adjacent to the first portion (141T1, 441T1, 541T1, 641T1) of the transparent conductive layer (141T, 441T, 541T, 641T) is smaller than the micro-cavity interval (MCI2) of the light (L2) emitted from the second portion of the light-emitting part (142) adjacent to the second portion (141T2, 441T2, 541T2, 641T2) of the transparent conductive layer (141T, 441T, 541T, 641T). [3] The display device (100, 400, 500, 600) according to claim 1 or 2, wherein an intensity at a mean viewing angle of the light (L1) emitted from the first portion of the light-emitting part (142) adjacent to the first portion (141T1, 441T1, 541T1, 641T1) of the transparent conductive layer (141T, 441T, 541T, 641T) is higher than an intensity at a mean viewing angle of the light (L2) emitted from the second portion of the light-emitting part (142) adjacent to the second portion (141T2, 441T2, 541T2, 641T2) of the transparent conductive layer (141T, 441T, 541T, 641T). [4] The display device (100, 400, 500, 600) according to any one of claims 1 to 3, wherein a full width at half maximum (FWHM1) of the light (L1) emitted from the first portion of the light-emitting part (142) adjacent to the first portion (141T1, 441T1, 541T1, 641T1) of the transparent conductive layer (141T, 441T, 541T, 641T) is smaller than a full width at half maximum (FWHM2) of the light (L2) emitted from the second portion of the light-emitting part (142) adjacent to the second portion (141T2, 441T2, 541T2, 641T2) of the transparent conductive layer (141T, 441T, 541T, 641T). [5] Display device (100, 400) according to one of claims 1 to 4, further comprising: a coating layer (115, 415) disposed between the plurality of transistors (120) and the plurality of first electrodes (141-1, 141-2, 141-3; 441-1, 441-2, 441-3) and having a first upper surface (115a, 415a) and a second upper surface (115b, 415b) inclined with respect to the first upper surface (115a, 415a), wherein the reflective layer (141M, 441M) comprises: a first portion (141M1, 441M1) configured to be adjacent to the first portion (141T1, 441T1, 541T1, 641T1) of the transparent conductive layer (141T, 441T, 541T, 641T) and disposed on the first upper surface (115a, 415a) of the overlay layer (115, 415); and a second portion (141M2, 441M2) spaced from the transparent conductive layer (141T, 441T, 541T, 641T) and disposed on the second upper surface (115b, 415b) of the overcoat layer (115, 415). [6] The display device (100, 400) according to claim 5, wherein a micro-cavity interval (MCI1) of the light (L1) emitted from the first portion of the light-emitting part (142) adjacent to the first portion (141T1, 441T1) of the transparent conductive layer (141T, 441T) arranged in one sub-pixel (SP2) of the plurality of sub-pixels (SP1, SP2, SP3) is an interval between the second electrode (143) and the first portion (141M1, 441M1) of the reflective layer (141M, 441M) arranged in the one sub-pixel (SP2), and wherein a micro-cavity interval (MCI2) of the light (L2) emitted from the second portion of the light-emitting part (142) which is adjacent to the second portion (141T2, 441T2) of the transparent conductive layer (141T, 441T) arranged in the one subpixel (SP2), an interval between the second electrode (143) arranged in the one subpixel (SP2) and the second portion (141M2,441M2) of the reflective layer (141M, 441M) arranged in another subpixel (SP1, SP3) adjacent to the one subpixel (SP2). [7] Display device (100) according to claim 5 or 6, further comprising: a bank (116) arranged between the second portion (141M2) of the reflective layer (141M) and the second portion (141T2) of the transparent conductive layer (141T) between the plurality of subpixels (SP1, SP2, SP3), wherein the second upper surface (115b) of the coating layer (115) and an upper surface of the bench (116) have curved surfaces. [8] Display device (400) according to claim 5 or 6, further comprising: a bank (416) arranged between the second portion (441M2) of the reflective layer (441M) and the second portion (441T2) of the transparent conductive layer (441T) between the plurality of subpixels (SP1, SP2, SP3), wherein the second upper surface (415b) of the coating layer (415) and an upper surface of the bench (416) have flat surfaces that are inclined with respect to the first upper surface (415a) of the coating layer (415). [9] The display device (400) according to claim 8, wherein the second portion (441T2) of the transparent conductive layer (441T) arranged in one subpixel (SP2) of the plurality of subpixels (SP1, SP2, SP3) is parallel to the second portion (441M2) of the reflective layer (441M) arranged in another subpixel (SP1, SP3) adjacent to the one subpixel (SP2). [10] Display device (500, 600) according to one of claims 1 to 4, further comprising: a coating layer (515) disposed between the plurality of transistors (120) and the plurality of first electrodes (541-1, 541-2, 541-3; 641-1, 641-2, 641-3) and having an upper surface, wherein the reflective layer (541M, 641M) is arranged on the upper surface of the coating layer (515), and wherein the reflective layer (541M, 641M) comprises: a first portion (541M1, 641M1) configured to be adjacent to the first portion (541T1, 641T1) of the transparent conductive layer (541T, 641T); and a second portion (541M2, 641M2) spaced from the transparent conductive layer (541T, 641T). [11] The display device (500, 600) according to claim 10, wherein a micro-cavity interval (MCI1) of the light (L1) emitted from the first portion of the light-emitting part (142) adjacent to the first portion (541T1, 641T1) of the transparent conductive layer (541T, 641T) arranged in one sub-pixel (SP1, SP2, SP3) among the plurality of sub-pixels (SP1, SP2, SP3) is an interval between the second electrode (143) and the first portion (541M1, 641M1) of the reflective layer (541M, 641M) arranged in the one sub-pixel (SP1, SP2, SP3), and wherein a micro-cavity interval (MCI2) of the light (L2) emitted from the second portion of the light-emitting part (142) which is adjacent to the second portion (541T2, 641T2) of the transparent conductive layer (541T, 641T) arranged in the one subpixel (SP1, SP2, SP3), an interval between the second electrode (143) and the second portion (541M2,641M2) of the reflective layer (541M, 641M) arranged in the one subpixel (SP1, SP2, SP3). [12] Display device (500) according to claim 10 or 11, further comprising: a bank (516) disposed between the second portion (541M2) of the reflective layer (541M) and the second portion (541T2) of the transparent conductive layer (541T) between the plurality of subpixels (SP1, SP2, SP3). [13] The display device (500) of claim 12, wherein a refractive index of the bank (516) is about 1.8 or more. [14] Display device (600) according to claim 10 or 11, further comprising: an additional pattern (AP) arranged between the second portion (641T2) of the transparent conductive layer (641T) and the second portion (641M2) of the reflective layer (641M); and a bank (616) arranged to surround a side surface of the first electrode (641-1, 641-2, 641-3) and a side surface of the additional pattern (AP). [15] The display device (600) according to claim 14, wherein the additional pattern (AP) is made of the same material as the transparent conductive layer (641T). [16] The display device (100, 400, 500, 600) according to any one of claims 1 to 15, wherein the plurality of subpixels (SP1, SP2, SP3) comprises a first subpixel (SP1), a second subpixel (SP2), and a third subpixel (SP3), each configured to emit light beams of different colors, and wherein the transparent conductive layers (141T, 441T, 541T, 641T) in the first subpixel (SP1), the second subpixel (SP2), and the third subpixel (SP3) have different thicknesses. [17] Display device (100, 400, 500, 600) comprising: a plurality of subpixels (SP1, SP2, SP3); a plurality of transistors (120) each arranged in the plurality of subpixels (SP1, SP2, SP3); a plurality of first electrodes (141-1, 141-2, 141-3; 441-1, 441-2, 441-3; 541-1, 541-2, 541-3; 641-1, 641-2, 641-3), each arranged on the plurality of transistors (120) and connected to the plurality of transistors (120), wherein each of the plurality of first electrodes (141-1, 141-2, 141-3; 441-1, 441-2, 441-3; 541-1, 541-2, 541-3; 641-1, 641-2, 641-3) comprises a reflective layer (141M, 441M, 541M, 641M) and a a transparent conductive layer (141T, 441T, 541T, 641T) arranged on the reflective layer (141M, 441M, 541M, 641M); a plurality of light-emitting parts (142) each arranged on the plurality of first electrodes (141-1, 141-2, 141-3; 441-1, 441-2, 441-3; 541-1, 541-2, 541-3; 641-1, 641-2, 641-3); and a second electrode (143) arranged on the plurality of light-emitting parts (142), wherein the transparent conductive layer (141T, 441T, 541T, 641T) has a first portion (141T1, 441T1, 541T1, 641T1) configured to be adjacent to the reflective layer (141M, 441M, 541M, 641M) and a second portion spaced from the reflective layer (141M, 441M, 541M, 641M), wherein each light-emitting part (142) has a first portion adjacent to the first portion (141T1, 441T1, 541T1, 641T1) of the transparent conductive layer (141T, 441T, 541T, 641T) and a second portion adjacent to the second portion (141T2, 441T2, 541T2, 641T2) of the transparent conductive layer (141T, 441T, 541T, 641T), wherein a light (L1) emitted from the first portion of the light-emitting part (142) adjacent to the first portion (141T1, 441T1, 541T1, 641T1) of the transparent conductive layer (141T, 441T, 541T, 641T) is amplified by a first micro-cavity interval (MCI1), and a light (L2) emitted from the second portion of the light-emitting part (142) adjacent to the second portion (141T2, 441T2, 541T2, 641T2) of the transparent conductive layer (141T, 441T, 541T, 641T) is amplified by a second micro-cavity interval (MCI2), and wherein a portion of the light emitted by one subpixel (SP1, SP2, SP3) of the plurality of subpixels (SP1, SP2, SP3) is configured to enhance a light intensity at a medium viewing angle, and another portion of the light emitted by the one subpixel (SP1, SP2, SP3) is configured to minimize a change in light intensity with a change in viewing angle. [18] Display device (100, 400) according to claim 17, further comprising: a coating layer (115, 415) disposed between the plurality of transistors (120) and the plurality of first electrodes (141-1, 141-2, 141-3; 441-1, 441-2, 441-3) and having a first upper surface (115a, 415a) and a second upper surface (115b, 415b) inclined with respect to the first upper surface (115a, 415a), wherein the reflective layer (141M, 441M) comprises: a first portion (141M1, 441M1) configured to be adjacent to the first portion (141T1, 441T1) of the transparent conductive layer (141T, 441T) and disposed on the first upper surface (115a, 415a) of the overlay layer (115, 415); and a second portion (141M2, 441M2) spaced from the transparent conductive layer (141T, 441T) and disposed on the second upper surface (115b, 415b) of the overcoat layer (115, 415). [19] The display device (100, 400) according to claim 18, wherein the first micro-cavity interval (MC11) is an interval between the second electrode (143) and the first portion (141M2, 441M2) of the reflective layer (141M, 441M) arranged in the one sub-pixel (SP2), and wherein the second micro-cavity interval (MC12) is an interval between the second electrode (143) arranged in the one sub-pixel (SP2) and the second portion (141M2, 441M2) of the reflective layer (141M, 441M) arranged in another sub-pixel (SP1, SP3) adjacent to the one sub-pixel (SP2). [20] Display device (500, 600) according to claim 17, further comprising: a coating layer (515) disposed between the plurality of transistors (120) and the plurality of first electrodes (541-1, 541-2, 541-3; 641-1, 641-2, 641-3) and having an upper surface, wherein the reflective layer (541M, 641M) is arranged on the upper surface of the coating layer (515), and wherein the reflective layer (541M, 641M) comprises: a first portion (541M1, 641M1) configured to be adjacent to the first portion (541T1, 641T1) of the transparent conductive layer (541T, 641T); and a second portion (541M2, 641M2) spaced from the transparent conductive layer (541T, 641T). [21] The display device (500, 600) according to claim 20, wherein the first micro-cavity interval (MC11) is an interval between the second electrode (143) and the first portion (541M1, 641M1) of the reflective layer (541M, 641M) arranged in the one sub-pixel (SP1, SP2, SP3), and wherein the second micro-cavity interval (MC12) is an interval between the second electrode (143) and the second portion (541M2, 641M2) of the reflective layer (541M, 641M) arranged in the one sub-pixel (SP1, SP2, SP3).

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