Electrical component and method for manufacturing an electrical component

Abstract

An electrical component (1) comprises a base body (2), at least one contact structure (3), and a stabilizing structure (4). The at least one contact structure (3) is arranged on at least one main surface (20) of the base body (2). The stabilizing structure (4) is arranged on at least one main surface (20) of the base body (2). The stabilizing structure (4) is configured to increase the mechanical stability of the contact structure (3).

Description

[0001] An electrical component is specified. Furthermore, a method for manufacturing an electrical component is specified.

[0002] In semiconductor electronic devices, the mechanical strength of metallic contact structures on semiconductor surfaces is typically limited by the area of ​​the contact structures and by the adhesion strength of the transition layers between the contact structure and the semiconductor surface. In small devices, for example those with external dimensions of less than 0.5 mm, such low strengths can occur that a reliable solder joint is difficult to achieve.

[0003] Particularly during component placement, mechanical bending of a substrate such as a circuit board on which the component is mounted, or during vibration and shock loads, mechanical stresses can occur that impair mechanical robustness.

[0004] Furthermore, during operation of the component, especially if the component is soldered onto a substrate, temperature cycling stresses can occur, which, as thermomechanical stresses, further impair the robustness of the component.

[0005] One of the tasks to be solved is, among other things, to specify an improved electrical component whose contact structures exhibit, in particular, increased mechanical stability. Another task to be solved is, among other things, to specify a method for manufacturing such an electrical component.

[0006] An electrical component is proposed comprising a base body and at least one contact structure. The at least one contact structure is arranged on at least one major surface of the base body. The electrical component also includes a stabilizing structure, which is arranged on at least one major surface of the base body. The stabilizing structure is designed to increase the mechanical stability of the contact structure.

[0007] For example, the electrical component comprises two contact structures. For instance, the first of the two contact structures is the anode of the electrical component, and the second contact structure is the cathode. It is also possible for the electrical component to have more than two contact structures, for example, three, four, or more than four.

[0008] Here and in the following, the at least one contact structure is also referred to as the "contact structure". That is to say, if a feature for a contact structure is disclosed below, then this feature is also disclosed for the at least one contact structure and, in particular, for all contact structures, unless otherwise stated.

[0009] The contact structure, for example, has at least one electrical contact surface by means of which the electrical component can be externally electrically contacted. For example, the contact surface is a solder pad via which the electrical component can be soldered onto a substrate, such as a circuit board.

[0010] The contact structure preferably comprises an electrically conductive material and particularly preferably a metal. For example, the contact structure comprises at least one of the following materials: gold, silver, aluminum, tin, copper.

[0011] In particular, the stabilization structure is designed to increase the mechanical strength of the contact structure(s) and thus of the electrical component.

[0012] Furthermore, the stabilization structure is designed as an alternative or additional measure to reduce thermomechanical stresses on the contact structure(s) and thus on the electrical component.

[0013] For example, the contact structure is arranged on the main surface of the base body and on at least one side surface of the base body. The side surface is, in particular, an outer surface of the base body that runs transversely or perpendicularly to the skin surface. The contact structure is, in particular, formed in one piece. This means, in particular, that the contact structure extends from the main surface to at least one side surface of the base body. The contact structure can at least partially cover the main surface and at least one side surface of the base body. In a section through the base body perpendicular to the main surface, the contact structure can have the shape of an L.

[0014] The electrical component can, in particular, have multiple side surfaces. For example, a first side surface extends transversely and a second side surface perpendicular to the main plane of extension. During the manufacture of the electrical component, for example, an edge region where the main surface and a side surface extending perpendicular to the main surface meet is rounded, thereby creating the first and second side surfaces. Preferably, the contact structure covers the first and second side surfaces.

[0015] According to a first preferred embodiment of the electrical component, the stabilizing structure comprises at least one recess in the base body. At least a portion of the contact structure is positively engaged in the recess. In particular, the portion of the contact structure that is arranged in the recess completely fills the recess.

[0016] By positively interlocking at least part of the contact structure within a recess in the base body, the mechanical strength of the contact structure can be increased, particularly compared to components where the contact structure is applied to the main surface. Advantageously, this also allows small electrical components to be provided with a mechanically robust and reliable contact structure. Specifically, the stabilizing structure comprises the recesses as well as the portion of the contact structure that positively engages in the recess.

[0017] Preferably, the electrical component has a recess for each contact structure. If a feature for a recess is disclosed here and below, this feature is also disclosed for all other recesses that the electrical component may have.

[0018] In particular, the recess is located on the main surface of the base body. For example, an opening in the recess, through which the interior surfaces of the recess are accessible, is located on the main surface. Thus, the recess is accessible externally, especially via the main surface.

[0019] Alternatively or additionally, the recess is arranged on the side surface. Particularly in cases where the contact structure extends from the main surface to the side surface, this can increase the mechanical strength of the contact structure on the side surface.

[0020] Preferably, the recess on the main surface and the recess on the side surface of the base body are connected to each other. The recess can extend from the main surface to the side surface. In particular, the recess can be arranged in an edge region where the main surface meets the side surface.

[0021] In a further development of the first preferred embodiment of the electrical component, the recess has a structure on at least one inner surface. The inner surface runs, in particular, transversely or perpendicularly to the main surface of the base body.

[0022] The structuring can, for example, include pyramid-shaped structures, parabolic structures and / or strip-shaped structures.

[0023] In particular, the part of the contact structure located in the recess engages with the structure. This increases the adhesion between the contact structure and the base body, thereby further increasing the mechanical strength of the contact structure.

[0024] In a further development of the first preferred embodiment of the electrical component, a passivation layer is arranged on at least one inner surface of the recess. The passivation layer is preferably in direct contact with the base body.

[0025] The passivation layer can comprise an oxide or nitride. For example, the passivation layer contains at least one of the following materials: SiO, SiO2, SiN.

[0026] The passivation layer can also be arranged on the main surface and side surfaces of the base body. For example, all outer surfaces of the base body are covered with the passivation layer and are preferably in direct contact with the base body.

[0027] The passivation layer protects the base body from environmental influences and damage during the manufacturing process or in operation.

[0028] In a preferred embodiment of the first preferred design, the contact structure comprises a first region and a second region. The first region is arranged within the recess, and the second region is arranged outside the recess. For example, the second region is arranged outside the recess on the main surface of the base body. An electrical connection surface of the contact structure is preferably arranged on the second region.

[0029] The first area is preferably limited to the recess. This means, in particular, that the part of the contact structure located inside the recess is the first area, and a part of the contact structure located outside the recess is the second area.

[0030] The second region, for example, has a larger lateral extent than the first region. A lateral extent is, in particular, a dimension of the first / second region in the lateral direction. Lateral directions are, in particular, directions parallel to the main surface of the base body. The lateral extent of the first / second region is, for example, the maximum lateral extent of the respective region.

[0031] The first and second areas can contain different materials. For example, the first area might contain one of the following materials: copper, silver. For example, the second area might contain one of the following materials: gold, tin. "Contains different materials" specifically means that the material composition of the first and second areas can differ. For example, the first and second areas might contain at least some of the same materials. It is also possible that the first and second areas contain the same materials, but in different compositions.

[0032] In a further development of the first embodiment of the electrical component, the contact structure is arranged flush with the base body. In other words, the contact structure is flush with the main surface and / or side surfaces of the base body.

[0033] For example, the contact structure is entirely located within the recess. This means, in particular, that the contact structure can only encompass the first area.

[0034] By designing the contact structure without protrusions, the miniaturization level of the electrical component can be increased. Furthermore, a higher utilization rate, meaning a greater number of components per wafer, can be achieved during the manufacturing of the electrical component.

[0035] According to a second preferred embodiment, the stabilizing structure comprises a buffer layer. The buffer layer is arranged at least between a portion of the contact structure and the base body. The contact structure has at least one through-hole through the buffer layer.

[0036] For example, the via completely penetrates the buffer layer in a direction perpendicular to the main surface. In particular, the via establishes an electrically conductive connection between the contact structure and the base body.

[0037] Preferably, with the exception of the vias, the entire contact structure is arranged on the buffer layer. This means, in particular, that the contact structure is connected to the base body only via the vias.

[0038] Preferably, the buffer layer completely covers at least the main surface of the base body, except for openings through the buffer layer. In particular, vias of the contact structure are arranged in these openings. That is, from the perspective of the main surface, it can be completely covered by the buffer layer together with the contact structure.

[0039] The buffer layer is preferably flexible. It is specifically designed to reduce thermomechanical stresses, such as thermal strains, between the base body and the contact structure. This increases the mechanical stability and robustness of the contact structure.

[0040] For example, a via connects the first region of the contact structure to the second region of the contact structure in an electrically conductive manner. The via can be made of the same material as the first and / or second region.

[0041] Preferably, the buffer layer is in direct contact with the base body and the contact structure. For example, the buffer layer is arranged directly on the contact structure and the base body. Alternatively, the contact structure may be arranged at least partially directly on the buffer layer. In areas where the buffer layer is located between the contact structure and the base body, the buffer layer follows directly onto the base body in the direction away from the base body, and the contact structure follows directly onto the buffer layer.

[0042] The buffer layer is particularly flexible.

[0043] For example, the buffer layer comprises an organic material. For instance, the buffer layer may contain a material from the polyimide class. Alternatively or additionally, the buffer layer may contain a permanent resist, poly(p-phenylene-2,6-benzobisoxazole) (PBO), and / or other suitable flexible materials.

[0044] In a further development of the second preferred embodiment of the electrical component, the buffer layer is arranged on the side surfaces of the base body between the contact structure and the base body. The buffer layer is preferably formed in one piece. For example, the buffer layer extends from the main surface of the base body to the side surfaces. In this further development, the contact structure extends particularly to the side surface.

[0045] Preferably, no perforations in the buffer layer or vias of the contact structure are arranged on the side surface. Alternatively, perforations in the buffer layer and vias of the contact structure can be arranged on the side surface.

[0046] According to a third preferred embodiment, the stabilizing structure comprises the recess and the buffer layer. That is to say, the third preferred embodiment is, in particular, a combination of the first and second preferred embodiments. All features and optional features disclosed for the first preferred embodiment are therefore also disclosed for the third preferred embodiment, and vice versa. Likewise, all features and optional features disclosed for the second preferred embodiment are also disclosed for the third preferred embodiment, and vice versa.

[0047] In the third preferred embodiment, the stabilizing structure has a recess in the base body, wherein at least a portion of the contact structure is positively engaged within the recess. Furthermore, the stabilizing structure additionally comprises a buffer layer, which is arranged at least between a portion of the contact structure and the base body, wherein the contact structure has at least one through-hole through the buffer layer. Preferably, the main surface of the base body is completely covered by the buffer layer, except for openings in the buffer layer in which the through-hole is located.

[0048] According to at least one embodiment, which is in particular a further development of the first, second and / or third preferred embodiment, the contact structure has a shape other than a rectangle when viewed from the main surface and / or the side surface of the base body. For example, two opposite sides of the contour have an arc-shaped section. For example, the contour of the contact structure follows at least a portion of the contour of the recess structures.

[0049] According to at least one further embodiment, which is in particular a further development of the first, second and / or third preferred embodiment, the base body comprises a brittle material. Preferably, the base body comprises a semiconductor material. For example, the base body comprises one of the following materials: silicon, silicon carbide, germanium or another semiconductor material.

[0050] Alternatively, the base body may consist of another brittle material such as glass or ceramic.

[0051] According to at least one further embodiment, which is in particular a further development of the first, second and / or third preferred embodiment, the base body has a length of at most 600 µm, in particular at most 400 µm. Furthermore, the base body has a width of at most 300 µm, in particular at most 200 µm. Furthermore, the base body has a height of at most 100 µm. For example, the base body is a cuboid.

[0052] The length is defined as the extent of the base body along one of its longest outer edges of the main surface. The width is defined, in particular, as the extent along one of its shortest outer edges of the main surface. The height is defined, in particular, as the extent of the base body perpendicular to the main surface.

[0053] Especially with such small base bodies made of brittle material, the mechanical stability of contact structures can typically be problematic. In the electrical components described here, particularly according to the first, second, and third preferred embodiments, the mechanical stability can be increased, thus enabling even small electrical components with brittle base bodies to be provided with reliable contact structures.

[0054] Furthermore, a method for manufacturing an electrical component is disclosed. In particular, the method can be used to manufacture an electrical component described herein according to one or more of the embodiments described above. That is to say, all features disclosed for the method are also disclosed for the electrical component and vice versa.

[0055] In a first embodiment of the method, a plurality of base bodies are provided in a composite in a first step. The composite is, for example, a wafer. For instance, the wafer is a semiconductor wafer or a glass wafer.

[0056] In a subsequent step of the process, a stabilizing structure is formed by creating a multitude of recesses on a main surface of the composite. Preferably, the recesses are produced by plasma etching or reactive ion etching, also known as deep reactive ion etching (DRIE). Alternatively, another suitable etching method can be used.

[0057] In a subsequent step of the process, a multitude of contact structures are applied. Preferably, at least a portion of each contact structure is arranged in one of the recesses. In particular, the portion of the contact structures arranged in the recesses is positively fitted into the recesses. In other words, this portion of the contact structures completely fills the assigned recess.

[0058] In a further step of the process, the composite is separated into a multitude of electrical components. Each electrical component is assigned exactly one base body and at least one contact structure. This also means that each electrical component has at least one recess or stabilizing structure. For example, the composite is separated by sawing, scoring and breaking, plasma cutting, or laser cutting.

[0059] In particular, the electrical component is an electrical component according to the first preferred embodiment described above.

[0060] In a further development of the first embodiment of the method, a plurality of grooves are formed in the composite before the contact structures are applied. At least some of the grooves are connected to one of the recesses, and at least a portion of the contact structures are arranged in the grooves. In particular, singulation is achieved by means of separating lines running through the grooves. The portion of the contact structures that is arranged in the grooves is preferably inserted into the grooves in a form-fitting manner.

[0061] For example, the trenches are created together with the recesses. For example, similar or identical methods are used to create the trenches as to create the recesses. The trenches are formed particularly on the main surface of the structure.

[0062] The trenches are preferably deeper, measured perpendicular to the main surface, than the recesses. This means, in particular, that the trenches extend further into the structure than the recesses.

[0063] For example, the part of the contact structure that is arranged in the grooves forms part of the side surface of the electrical component after singulation. Such an electrical component can therefore have an L-shaped contact structure in a section perpendicular to the main surface.

[0064] In a further development of the first embodiment of the method, at least some of the inner surfaces of the recesses and / or grooves are provided with structures before the contact structures are applied. The structuring can be formed, in particular, during the formation of the recesses or grooves. Preferably, the same methods used for forming the recesses or grooves can be employed for this purpose. That is, the structuring can advantageously be formed without performing an additional process step.

[0065] In a further development of the first embodiment of the method, at least the inner surfaces of the recesses are provided with a passivation layer before the contact structures are applied. Additionally, the main surface of the composite and / or the grooves can be provided with the passivation layer.

[0066] The passivation layer is applied, for example, using plasma-enhanced chemical vapor deposition (PE-CVD), and can then be structured, for example, by photolithography. Alternatively, another suitable deposition process can be used to apply the passivation layer.

[0067] In a further development of the first embodiment of the method, the application of the contact structures comprises forming a first region of the contact structures and forming a second region of the contact structures. The first region is arranged in the recess, and the second region is arranged on the main surface. The first region is thus, in particular, the part of the respective contact structure that is arranged in the recess. Preferably, the first region is confined to the recess and does not project beyond it.

[0068] In a preferred embodiment of the first method, a structured buffer layer is applied to the main surface as part of the stabilizing structure between the formation of the first and second regions. The buffer layer is preferably arranged between each contact structure, in particular the associated second region, and the main surface.

[0069] The buffer layer is applied using the same methods as the passivation layer and can optionally be structured.

[0070] The buffer layer can be structured with openings that completely penetrate the buffer layer in a direction perpendicular to the main surface. Vias of the contact structure can be arranged in the openings, connecting the corresponding first region to the corresponding second region.

[0071] According to a second embodiment of the method, which may in particular be an alternative to the first embodiment of the method, a plurality of base bodies are provided in the composite.

[0072] In a subsequent step, the stabilizing structure is formed by applying a buffer layer to a main surface of the composite. In a further step, a large number of openings are created in the buffer layer.

[0073] The buffer layer can be a lacquer layer. The buffer layer can be structured with perforations using photolithography.

[0074] In a further step, a large number of contact structures are applied, with the contact structures completely filling the openings in the buffer layer. Some of the contact structures arranged in the openings form vias through the buffer layer.

[0075] In the second embodiment of the method, the buffer layer is thus formed particularly between the contact structures and the main surface.

[0076] In a further step, the composite is separated into a multitude of electrical components, with each electrical component being assigned exactly one base body and at least one contact structure. This separation can be carried out using the same methods as described above in connection with the first embodiment of the method.

[0077] In particular, this enables the production of an electrical component according to the second preferred embodiment.

[0078] For example, the buffer layer can be stabilized by annealing before the contact structures are applied.

[0079] In a further development of the second embodiment of the method, a multitude of grooves are formed in the composite before the contact structures are applied. The grooves are formed particularly on the main surface of the composite and extend into the composite itself. The grooves can be formed by plasma etching, reactive ion etching, or mechanical sawing.

[0080] In particular, a portion of each contact structure is arranged in the grooves. The assembly is preferably separated by separation lines, which in particular run through the grooves. For example, the portion of the contact structure arranged in the grooves forms part of the side surface of the electrical component after separation. Such an electrical component can thus have an L-shaped contact structure in a section perpendicular to the main surface.

[0081] It is possible that edge areas between the grooves and the main surface of the composite are rounded. This allows the electrical component to have rounded corners on its main surface.

[0082] According to a third embodiment of the method, the stabilizing structure is formed by creating the recesses and applying the buffer layer. This third embodiment thus represents, in particular, a combination of the first and second embodiments of the method. This means, specifically, that all features and combinations of features disclosed for the first and second embodiments are also disclosed for the third embodiment, and vice versa.

[0083] In particular, an electrical component according to the third preferred embodiment is produced by means of the third embodiment of the method.

[0084] According to the third embodiment of the method, the process comprises a step in which a plurality of base bodies are provided. In a further step, the recesses and the buffer layer are formed on the main surface. The buffer layer can be structured so that the composite is exposed in the area of ​​the recesses. Subsequently, the contact structures are applied, the contact structures positively filling the recesses. In a further process step, the composite is separated into a plurality of electrical components, with each electrical component being assigned a base body, at least one recess, and at least one contact structure.

[0085] According to one embodiment of the method, which may in particular be a further development of the first, second and / or third embodiment, the application of the contact structures includes the application of a base metallization. The base metallization is preferably applied to the main surface of the composite and optionally also in the recesses and / or grooves.

[0086] The base metallization can be a relatively thin seed layer onto which further metallic material can be deposited. The base metallization is applied, for example, by sputtering.

[0087] In a further step of applying the contact structures, a structured mask can be applied to the base metallization. This mask could be, for example, a photoresist. The mask can be structured using photolithography. By structuring the mask, openings can be created within it. The base metallization is exposed within these openings.

[0088] In a further step, the base metallization can be reinforced in areas where it is exposed in the mask, extending to the contact structures. In other words, the base metallization is strengthened in the openings of the mask. For example, the material for the contact structures is electroplated onto the base metallization.

[0089] The mask and base metallization outside the contact structures are then removed.

[0090] It is possible to apply an adhesion promoter to the composite before base metallization, thus positioning it between the composite and the base metallization. The adhesion promoter can be removed along with the base metallization outside the contact structures. The adhesion promoter can strengthen the bond between the contact structure and the substrate in the finished electrical component. The adhesion promoter can therefore be part of the stabilizing structure.

[0091] Further advantages, beneficial embodiments, and further developments of the electrical component and the method for manufacturing it described here will become apparent from the exemplary embodiments presented below in conjunction with schematic drawings. Identical, similar, and functionally identical elements are designated with the same reference numerals in the figures. The figures and the relative sizes of the elements depicted are not necessarily to scale. Rather, individual elements may be exaggerated for clarity and / or better understanding.

[0092] They show: Fig. Figures 1 to 4 are schematic views of an electrical component described herein according to a first embodiment. Fig. 5 to 8 schematic views of an electrical component described here according to a second embodiment, Fig. 9 to 12 schematic views of an electrical component described here according to a third embodiment, Fig. 13 to 15 schematic views of an electrical component described herein according to a fourth embodiment, Fig. 16 to 18 schematic views of an electrical component described herein according to a fifth embodiment, Fig. 19 and Fig. 20 schematic views of an electrical component described here according to a sixth embodiment, Fig. 21 and Fig. 22 schematic views of an electrical component described herein according to a seventh embodiment, Fig. 23 to 25 different process stages of a process described here for the manufacture of an electrical component according to a first embodiment in sectional view, Fig. 26 to 28 different process stages of a process described here for the manufacture of an electrical component according to a second embodiment in sectional view, Fig. 29 to 31 different process stages of a process described here for the manufacture of an electrical component according to a third embodiment in sectional view, Fig. 32 to 35 different process stages of a process described here for the manufacture of an electrical component according to a fourth embodiment in sectional view, Fig. 26 to 40 different partial steps for the production of a contact structure for an electrical component described here, shown in sectional view. Fig. Figure 1 shows a bottom view of an electrical component 1 described herein according to a first embodiment. The bottom view is oriented towards a main surface 20 of a base body 2 of the electrical component 1. Fig. 2 shows a section view along the section line AA in Fig. 1. Fig. Figure 3 shows a detailed view of section D in Fig. 2. Fig. Figure 4 shows a section view along the section line BB in Fig. 1.

[0093] The electrical component 1 comprises a base body 1. The base body 1 comprises a brittle material such as a semiconductor material, glass, or a ceramic material. In this case, the base body 2 comprises, in particular, silicon.

[0094] Contact structures 3 are arranged on a main surface 20, which can be a base surface of the electrical component 1. In the present embodiment, two contact structures 3 are arranged. The contact structures 3 are designed for electrical contacting the electrical component 1. The contact structures 3 comprise one or more metals. In the present embodiment, the contact structures 3 comprise copper.

[0095] The electrical component 1 comprises a stabilizing structure 4. In the present embodiment, the stabilizing structure 4 comprises recesses 5 in the base body 2. As shown in Fig. As can be seen from 2 to 4, the recesses 5 are arranged on the main surface 20 and extend from the main surface 20 into the base body 2.

[0096] A portion of the contact structures 3 is arranged in the recesses 5. This portion is a first region 31 of the contact structures 3. The first region 31 is confined to the recess 5 and completely fills it, in particular in a form-fitting manner. A second region 32 of the contact structures 3 is arranged outside the recess 5.

[0097] In the first embodiment of the Fig. The contact structures 3 from side surfaces 21 of the base body 2 are spaced apart at points 1 to 4. The side surfaces 21 run perpendicular to the main surface 20.

[0098] Some inner surfaces 50 of the recess have a structure 51 which in particular has the contour of circular segments ( Fig. 3 and Fig. 4). The first area 31 interferes with the structuring 51.

[0099] The recesses 5 and the first area 31 form a stabilizing structure 4, which increases the mechanical stability of the contact structure. In particular, the positive engagement of the contact structure 3 in the recess 5 and the structuring 51 improve the mechanical strength of the contact structure 3, especially compared to components where the contact structures are only attached to the surface of the base body.

[0100] Fig. Figure 5 shows a bottom view of an electrical component 1 described herein according to a second embodiment. The bottom view is oriented towards a main surface 20 of a base body 2 of the electrical component 1.

[0101] Fig. Figure 6 shows a section view along the section line AA in Fig. 5.

[0102] Fig. Figure 7 shows a detailed view of section D in Fig. 6.

[0103] Fig. Figure 8 shows a side view of the electrical component 1 on a side surface 21 of the base body 2.

[0104] In contrast to the first embodiment of the Fig. 1 to 4 are in the exemplary embodiment of the Fig. 5 to 8 the contact structures 3 are at least partially arranged on side surfaces 21 of the base body 2. The contact structures 3 each extend in one piece from the main surface 20 to the side surface 21 ( Fig. 6).

[0105] From the ground view of the Fig. Figure 5 shows that the contact structures 3 have a contour that deviates from a rectangle. This contour is due, for example, to the structuring of the inner surfaces 50 of the recess 5.

[0106] As shown in the detailed view of the Fig. As can be seen in Figure 7, the recess 5 extends onto the side surface 21. In the area of ​​the side surface 23, the inner surfaces 50 have a structure 51, which is visible in the side view of the Fig. 8 is recognizable.

[0107] Furthermore, the electrical component 1 according to the second embodiment has in particular the same features, effects and advantages as the electrical component 1 according to the first embodiment.

[0108] Fig. Figure 9 shows a bottom view of an electrical component 1 described herein according to a third embodiment. The bottom view is oriented towards a main surface 20 of a base body 2 of the electrical component 1.

[0109] Fig. Figure 10 shows a section view along the section line AA in Fig. 9.

[0110] Fig. Figure 11 shows a detailed view of section D in Fig. 10.

[0111] Fig. Figure 12 shows a side view of the electrical component 1 on a side surface 21 of the base body 2.

[0112] In contrast to the second embodiment of the Fig. In the third embodiment, contact structures 3 are flush with the base body 2, as shown in sections 5 to 8. This means that the contact structures 3 are arranged without any protrusion on the base body 2. The contact structures 3 therefore do not extend beyond the main surface 20 and the side surfaces 21.

[0113] Furthermore, in the Fig. Figures 9 to 12 illustrate the dimensions of electrical component 1. Electrical component 1 has a length of 25 ( Fig. 9 and Fig. 10) of approximately 400 µm. The length 25 is measured parallel to the longest edge of the main surface 20. The electrical component 1 also has a width 26 of 200 µm. The width 26 is measured in the plane of the main surface 26 perpendicular to the length 25 ( Fig. 9) The electrical component 1 also has a height 27 of 100 µm. The height 27 is measured perpendicular to the length 25 and width 26 ( Fig. 10 and Fig. 12).

[0114] In particular, the electrical components 1 of all other embodiments can have the same or similar dimensions. Achieving sufficient mechanical stability of the contact structures 3 is particularly difficult with such small electrical components. In the electrical component 1 described here, the stabilizing structure 4 increases the mechanical stability of the contact structures 3 and thus improves the service life and robustness of the electrical component 1.

[0115] Furthermore, the electrical component 1 according to the third embodiment has in particular the same features, effects and advantages as the electrical component 1 according to one of the previously mentioned embodiments.

[0116] Fig. Figure 13 shows a bottom view of an electrical component 1 described herein according to a fourth embodiment. The bottom view is oriented towards a main surface 20 of a base body 2 of the electrical component 1.

[0117] Fig. Figure 14 shows a section view along the section line AA in Fig. 13.

[0118] Fig. Figure 15 shows a detailed view of section D in Fig. 14.

[0119] In contrast to the first embodiment of the Fig. In the electrical component 1 according to the fourth embodiment, the second region 32 has a larger lateral extent than the first region 31 of the contact structures 3. The lateral extent is measured parallel to the main surface 20.

[0120] Furthermore, the second region 32 can be made of a different material than the first region 31. For example, the first region 31 comprises copper and the second region 32 comprises gold. Such a difference in the material of the first region 31 and the second region 32 can also be implemented in all other embodiments without restricting other features of these embodiments.

[0121] The electrical component 1 of the Fig. 13 to 15 comprises a passivation layer 6. The passivation layer 6 is arranged in the recess 5 between the first region 31 of the contact structure 3 and the base body 3. Furthermore, the passivation layer 6 is arranged at least partially on the main surface 20. The passivation layer 6 comprises, in particular, silicon dioxide.

[0122] Such a passivation layer can also be present in all other embodiments.

[0123] Furthermore, the electrical component 1 according to the fourth embodiment has in particular the same features, effects and advantages as the electrical component 1 according to one of the previously mentioned embodiments.

[0124] Fig. Figure 16 shows a bottom view of an electrical component 1 described herein according to a fifth embodiment. The bottom view is oriented towards a main surface 20 of a base body 2 of the electrical component 1.

[0125] Fig. Figure 17 shows a section view along the section line AA in Fig. 16.

[0126] Fig. Figure 18 shows a detailed view of section D in Fig. 17.

[0127] In contrast to the fourth embodiment of the Fig. According to the fifth embodiment, the electrical component 1 comprises a buffer layer 7 as shown in sections 13 to 15. The buffer layer 7 is particularly flexible and is part of the stabilizing structure 4.

[0128] The buffer layer 7 is arranged on the main surface 20 and is at least partially located between the contact structure 3 and the main surface 20. The buffer layer 7 is located between the second area 32 and the base body 2 or the main surface 20.

[0129] Buffer layer 7 contains a polyimide.

[0130] In the buffer layer 7, openings 70 are provided that completely penetrate the buffer layer 70 in a direction perpendicular to the main surface 20 ( Fig. 18). The contact structure 3 includes vias 30 which are arranged in the openings 70 and connect the first area 31 with the second area 32.

[0131] The buffer layer 7 completely covers the main surface 20, except for the openings 70. The buffer layer 7 is in direct contact with the main surface 20 and the second area 32 of the contact structure 3.

[0132] The flexible buffer layer 7, which is part of the stabilizing structure 4, reduces thermomechanical stress that can occur, for example, during operation or when soldering the electrical component 1. This increases the mechanical stability of the contact structures 3 and / or the electrical component 1.

[0133] Furthermore, the electrical component 1 according to the fifth embodiment has in particular the same features, effects and advantages as the electrical component 1 according to one of the previously mentioned embodiments.

[0134] Fig. Figure 19 shows a bottom view of an electrical component 1 described herein according to a sixth embodiment. The bottom view is oriented towards a main surface 20 of a base body 2 of the electrical component 1.

[0135] Fig. 20 shows a section view along the section line AA in Fig. 19.

[0136] In contrast to the fifth embodiment of the Fig. The stabilization structure 4 of the electrical component 1 is shown at 16 to 18. Fig. 19 no recesses 5. The contact structures 3 are arranged on the buffer layer 7 and connected to the base body 2 by the associated vias 30.

[0137] Furthermore, the contact structures 3 extend onto side surfaces 21 of the base body 2. Likewise, the buffer layer 7 extends onto the side surfaces 21 and is also arranged in the area of ​​the side surfaces between the contact structures 2 and the base body 2.

[0138] A passivation layer 6 is arranged between the base body 2 and the buffer layer 7. The passivation layer 6 protects the base body during manufacturing and operation.

[0139] Furthermore, the electrical component 1 according to the sixth embodiment has in particular the same features, effects and advantages as the electrical component 1 according to one of the previously mentioned embodiments.

[0140] Fig. Figure 21 shows a bottom view of an electrical component 1 described herein according to a seventh embodiment. The bottom view is oriented towards a main surface 20 of a base body 2 of the electrical component 1.

[0141] Fig. 22 shows a section view along the section line AA in Fig. 21.

[0142] In contrast to the sixth embodiment of the Fig. 19 and Fig. The electrical component of the 20 comprises Fig. 21 and Fig. 22 three contact structures 3, wherein two contact structures 3 are arranged on a first edge of the main surface 20 and one contact structure 3 is arranged on a second edge of the main surface 20 opposite the first edge ( Fig. 21).

[0143] Furthermore, in the electrical component 1 according to the seventh embodiment, at least some corners are rounded. An edge region where the main surface 20 meets side surfaces 21 is rounded.

[0144] Furthermore, the electrical component 1 according to the sixth embodiment has in particular the same features, effects and advantages as the electrical component 1 according to the sixth embodiment.

[0145] In the method according to the first embodiment, a composite 8 is provided in a first step. The composite 8 can be a semiconductor wafer such as a silicon wafer. Recesses 5 and grooves 81 are introduced into the composite ( Fig. 23).

[0146] The recesses 5 and trenches 81 are partially connected and extend from a main area 80 of the complex 8 into the complex 8. The trenches 81 extend further into the complex 8 than the recesses.

[0147] The recesses 5 and trenches 81 are produced here by means of plasma etching.

[0148] The inner surfaces 50 of the recesses 5 and trenches 81 are provided with structures 51. The recesses 5 form part of a stabilization structure 4.

[0149] In a subsequent process step, the trenches 81 and recesses 5 are filled with a metallic material to form contact structures 3 ( Fig. 24). The contact structures 3 comprise copper. The contact structures 3 completely fill the recesses 5 and grooves 81. The contact structures 3 are formed in a form-fitting manner in the recesses 5 and grooves 81.

[0150] The assembly 8 is subsequently separated into a multitude of electrical components 1 by means of separation lines 82. This separation is carried out by sawing. The separation lines 82 run through the grooves 81, so that the contact structures 3 form at least a part of the side surfaces 21 of the electrical components 1.

[0151] Each electrical component 1 is assigned a base body 2, two contact structures 3 and two associated recesses 5 as a stabilizing structure 4.

[0152] In particular, the method according to the first embodiment is used to produce electrical components 1 according to the Fig. 9 to 12 manufactured.

[0153] In contrast to the procedure of Fig. 23 to 25, in the method according to the second embodiment, a buffer layer 7 is applied over the entire surface of the main surface 80 of the composite 8 ( Fig. 26). The buffer layer 7 is part of the stabilizing structure 4. The buffer layer is, for example, a layer of paint.

[0154] The buffer layer 7 is structured below ( Fig. 27). In this process, openings 70 are introduced into the buffer layer 7, penetrating the buffer layer 7 perpendicular to the main surface 80. The structuring is carried out by means of photolithography.

[0155] In a subsequent step, a contact structure 3 is applied ( Fig. 28). The contact structure 3 is arranged on a side of the buffer layer 7 facing away from the base body 2 and comprises vias 30, which are arranged in the openings 70. The remaining parts of the associated contact structure 3 are in contact with the base body 2 via the vias 30.

[0156] Subsequently, the assembly 8 is separated along dividing lines 82 into a multitude of electrical components ( Fig. 28). In this process, each electrical component 1 is assigned a base body 2, two contact structures 3 and a part of the buffer layer 7 as a stabilizing structure 4.

[0157] Furthermore, the method according to the second embodiment has, in particular, the same features, effects and advantages as the method according to the first embodiment.

[0158] In contrast to the procedure according to the Fig. In the procedure according to the third embodiment, trenches 81 are introduced into the composite 8 starting from the main surface 80 ( 26 to 28 Fig. 29). The buffer layer 7 extends into the trenches 81 and covers the inner surfaces of the trenches 81.

[0159] Subsequently, the buffer layer 7 is structured and breakthroughs 70 are formed that completely penetrate the buffer layer 7 ( Fig. 30). The base body 2 is exposed in the openings 7.

[0160] In a further step, the contact structure 3 is formed, whereby the openings 70 are filled with vias 30 ( Fig. 31). The trenches 81 are filled with the contact structure 3.

[0161] In a further step, the assembly 8 is separated into a large number of electrical components 1 ( Fig. 31). The singulation takes place along the dividing lines 82, which run through the grooves 81. The contact structure 3 thus forms at least part of a lateral outer surface of the electrical component 1.

[0162] Furthermore, the method according to the second embodiment has, in particular, the same features, effects and advantages as the method according to one of the embodiments described above.

[0163] In contrast to the procedure according to the Fig. 23 to 25, in the procedure according to the fourth embodiment, no additional trenches 81 are introduced into the composite 8 beyond the recesses 5 ( Fig. 32).

[0164] The formation of the recesses 5 with the structurings 51 is followed by a partial formation of the contact structures 3, whereby only a first area 31 of the contact structures 3 is formed, which are arranged in a form-fitting manner within the recesses 5 ( Fig. 33).

[0165] Subsequently, a buffer layer 7 is applied to the main surface 80 of the composite 8 and structured ( Fig. 34). By structuring, breakthroughs 70 are created in the buffer layer 7, which completely penetrate the buffer layer 7. In the breakthroughs 70, the first regions 31 of the contact structures 3 are exposed. The structuring is carried out using the methods mentioned above.

[0166] Subsequently, the second areas 32 of the contact structures 3 are applied ( Fig. 35). The second areas 32 are connected to the first areas 31 by means of vias 30 which are arranged in the openings 70.

[0167] Furthermore, the assembly 8 is separated into electrical components 1 by means of dividing lines 82 ( Fig. 35). The dividing lines 82 run between contact structures 3, so that each electrical component 1 has a base body 4 and two contact structures 3 as well as the associated recesses 5.

[0168] Furthermore, the method according to the second embodiment has, in particular, the same features, effects and advantages as the method according to one of the embodiments described above.

[0169] Fig. Figures 36 to 40 illustrate partial steps for applying the contact structures. 3. These partial steps can be carried out accordingly for each of the embodiments of the method.

[0170] In a first step, a passivation layer 6 is applied to the main surface 80 of the composite 8 and, if necessary, in the recesses 5 ( Fig. 6). The passivation layer 6 is applied, for example, by means of plasma-enhanced chemical vapor deposition.

[0171] Subsequently, a base metallization 35 is applied to the passivation layer 6 ( Fig. 37). The base metallization serves as a seed layer for the deposition of material for the contact structure 3.

[0172] In a subsequent step, a mask 36, which includes a photoresist, is applied to the base metallization 35 and textured ( Fig. 38). The structuring process creates an opening 37 in the mask 36, exposing the base metallization 35. The structuring of the mask 36 is carried out using photolithography.

[0173] The contact structure 3 is subsequently formed by reinforcing the base metallization 35 ( Fig. 39). If applicable, the contact structure 3 has the first area 31 and the second area 32.

[0174] In a further step, the mask 36 and the base metallization 35 outside the contact structure 3 are removed ( Fig. 40).

[0175] The invention is not limited to the description provided by means of the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the claims, even if that feature or combination itself is not explicitly stated in the claims or exemplary embodiments. Reference sign 1 Electrical component 2 basic shapes 3 Contact structure 4 Stabilization structure 5 Exclusion 6 Passivation layer 7 Buffer layer 8 network 20 Main surface of the base body 21 side surface 25 Length 26 width 27 Height 30 Through-hole plating 31 first area 32 second area 35 Base metallization 36 Mask 37 Opening 50 interior surface 51 Structuring 70 Breakthrough 80 Main area of ​​the network 81 Trench 82 Dividing line 83 edge area AA first section plane BB second section plane