Method for producing a semiconductor substrate without ex-situ structuring

The method of growing group III nitride semiconductor layers under superstoichiometric nitrogen conditions forms facets to terminate dislocations, resulting in a smooth, defect-free substrate suitable for high-indium-content structures, addressing fabrication challenges and reducing costs.

DE102024136271A1Pending Publication Date: 2026-06-11FORSCHUNGSVERBUND BERLIN EV
View PDF 1 Cites 0 Cited by

Patent Information

Application Number
DE102024136271
Authority / Receiving Office
DE · DE
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-12-05
Publication Date
2026-06-11

Smart Images

  • Figure 00000000_0000_ABST
    Figure 00000000_0000_ABST
Patent Text Reader

Abstract

The invention relates to a method for producing a semiconductor substrate (100). The method comprises providing a base substrate (10). The method further comprises growing a first group III nitride semiconductor layer (20) onto the base substrate (10) along a growth direction (A) under a superstoichiometric nitrogen supply, wherein a surface (22) of the first group III nitride semiconductor layer (20) has depressions (24) which are bounded by facets (26) of the first group III nitride semiconductor layer (20) oriented obliquely to the growth direction (A). The method further comprises growing a second group III nitride semiconductor layer (30) covering the depressions (24) onto the first group III nitride semiconductor layer (20) along the growth direction (A). Furthermore, the invention relates to a semiconductor substrate (100) which is preferably produced by the method.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials

    US20090243043A1