Method and system for minimizing defect compensation during the deposition of a doped crystalline semiconductor onto a substrate

Abstract

A method and a system for minimizing defect compensation during the deposition of a doped crystalline semiconductor onto a substrate are provided. The method utilizes a magnetron sputtering system. An electrical voltage is applied between a sputtering target and a magnetron anode via the system's voltage source, initiating a gas discharge and removing target material from the sputtering target. A dopant is dispensed from a source within the system, and a doped semiconductor is deposited onto the substrate. The process is conducted such that the doped semiconductor grows epitaxially on the substrate to form a crystalline, doped semiconductor. During the deposition of the doped semiconductor, UV radiation is emitted towards the substrate from a UV radiation source within the magnetron sputtering system.