Semiconductor device with a plurality of replication units and with a plurality of resistors and methods for manufacturing the same
DE102025102306A1Undetermined Publication Date: 2026-07-23INFINEON TECH AUSTRIA AG
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- INFINEON TECH AUSTRIA AG
- Filing Date
- 2025-01-22
- Publication Date
- 2026-07-23
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Abstract
Exemplary embodiments include a semiconductor device having the following features: a gate node, a drain node, a source node, and a gate bus, wherein the gate bus is connected to the gate node; a source structure and a drain structure, wherein the source structure is coupled to the source node and wherein the drain structure is coupled to the drain node; a plurality of replication units, wherein each replication unit of the plurality of replication units has a gate finger; wherein the gate fingers, the source structure, and the drain structure are arranged to form a transistor structure; and a plurality of resistors, wherein each resistor connects one of the gate fingers to the gate bus. Furthermore, a method for fabricating a semiconductor device is disclosed.
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Citation Information
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