Semiconductor device with a plurality of replication units and with a plurality of resistors and methods for manufacturing the same

DE102025102306A1Undetermined Publication Date: 2026-07-23INFINEON TECH AUSTRIA AG
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Applications
Current Assignee / Owner
INFINEON TECH AUSTRIA AG
Filing Date
2025-01-22
Publication Date
2026-07-23

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Abstract

Exemplary embodiments include a semiconductor device having the following features: a gate node, a drain node, a source node, and a gate bus, wherein the gate bus is connected to the gate node; a source structure and a drain structure, wherein the source structure is coupled to the source node and wherein the drain structure is coupled to the drain node; a plurality of replication units, wherein each replication unit of the plurality of replication units has a gate finger; wherein the gate fingers, the source structure, and the drain structure are arranged to form a transistor structure; and a plurality of resistors, wherein each resistor connects one of the gate fingers to the gate bus. Furthermore, a method for fabricating a semiconductor device is disclosed.
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Citation Information

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