A method for operating a hybrid Si-SiC switch
DE102025112007A1Undetermined Publication Date: 2026-10-01SCHAEFFLER TECHNOLOGIES AG & CO KG
Patent Information
- Application Number
- DE102025112007
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-27
- Publication Date
- 2026-10-01
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Abstract
A method for operating a hybrid switch comprising at least one silicon (Si) insulated-gate bipolar transistor (IGBT) and at least one silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) arranged in parallel, the method comprising the following steps: determining a gate-on signal time tON_IGBT of the Si transistor, determining a gate-on signal time tON_MOSFET of the SiC transistor, determining a negative gate-on signal delay time Δt between the Si transistor and the SiC transistor by subtracting the determined gate-on signal time tON_IGBT of the Si transistor from the determined gate-on signal time tON_MOSFET of the SiC transistor, Δt = tON_MOSFET - ΔON_IGBT, and operating the hybrid switch with the determined negative gate-ON switching signal delay time Δt.
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Citation Information
Patent Citations
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