DISPLAY DEVICE

Abstract

Embodiments of the disclosure relate to a display device. More precisely, embodiments of the disclosure can provide a display device that can increase the luminous efficiency in the optical area by arranging a first structuring layer in the transmission region of the optical area, by arranging a second structuring layer in the first emission region of the normal area, and by arranging a second cathode electrode in the second emission region of the optical area, in order to reduce luminance deviations between the normal area and the optical area.

Description

[0001] This application claims priority over Korean patent application No. 10-2024-0120498, which was filed on September 5, 2024. BACKGROUND area

[0002] Embodiments of the present disclosure relate to a display device. Description of the related technique

[0003] With the development of the information society, the demand for display devices for showing images in various formats is increasing. In recent years, various display devices such as liquid crystal displays and organic light-emitting displays have been used.

[0004] Furthermore, the display device can offer a detection function to perform a function depending on the ambient light. For this purpose, the display device should include various electronic devices (optical electronic devices) such as detection sensors and image sensors (cameras).

[0005] Since the electronic device should receive light from the front of the display device, a transmission area with a hole should be formed in the cathode electrode in the area where the electronic device is located.

[0006] Since the transmission area replaces the emission area where the light-emitting element was previously located, a luminance difference can occur between the area where an electronic device is located and the area where no electronic device is located. BRIEF SUMMARY

[0007] The task is to provide a display device that increases the luminous efficiency by arranging the second cathode electrode on top of the first cathode electrode in the optical area where the optical electronic device is located.

[0008] Another task is to provide a display device that increases the luminous efficiency of an optical area and reduces luminance deviation between the optical area and the normal area.

[0009] Another task is to provide a display device that enables lower power control by creating a micro-cavity effect between the first cover layer and the second cover layer, which are arranged on the light-emitting element and the second cathode electrode, in order to increase the luminous efficiency.

[0010] Another task is to provide a display device that can shield electromagnetic waves in UV bands emitted from outside the display panel by arranging the second cathode electrode in the optical area.

[0011] The problem is solved by the features of the independent claims. Preferred embodiments are specified in the dependent claims.

[0012] Embodiments of the disclosure may provide a display device comprising: a substrate having a first region with multiple first emission regions and a second region with multiple second emission regions and multiple transmission regions, multiple first anode electrodes, each arranged in the first emission regions and positioned on the substrate, multiple second anode electrodes, each arranged in multiple second emission regions and positioned on the substrate, multiple first light-emitting layers arranged on the multiple first anode electrodes, multiple second light-emitting layers arranged on the multiple second anode electrodes, a first cathode electrode arranged on the multiple first light-emitting layers and the multiple second light-emitting layers, and a second cathode electrode.a first structuring layer, which is arranged in the several second emission regions and positioned on the first cathode electrode, a first structuring layer, which is arranged in the several transmission regions and in a horizontal direction adjacent to a side surface of the first cathode electrode, and a second structuring layer, which is arranged in the several first emission regions, positioned on the first cathode electrode and arranged in a horizontal direction adjacent to a side surface of the second cathode electrode.

[0013] Embodiments can provide a display device comprising: a substrate, several anode electrodes arranged on the substrate, several first light-emitting layers and several second light-emitting layers, each arranged on the several anode electrodes, a first cathode electrode arranged on the several first light-emitting layers and the several second light-emitting layers, a structuring layer positioned on the first cathode electrode and overlapping the several first light-emitting layers in a vertical direction, and a second cathode electrode arranged on the first cathode electrode and overlapping the several second light-emitting layers in a vertical direction.

[0014] In one or more embodiments, the first cathode electrode and the second cathode electrode can have different refractive indices.

[0015] In one or more embodiments, the first structuring layer and the second structuring layer can each contain a material that inhibits metal nucleation.

[0016] In one or more embodiments, the second structuring layer may not be located in EA2.

[0017] In one or more embodiments, a second cathode electrode can be arranged in the optical area to shield electromagnetic waves in UV bands emitted from outside the display panel.

[0018] In one or more embodiments, at least one section of the second cathode electrode may not overlap the first structuring layer in the vertical direction.

[0019] In one or more embodiments, the display device may further comprise an electron transport layer arranged on several first light-emitting layers and several second light-emitting layers, and an electron injection layer arranged between the electron transport layer and the first cathode electrode.

[0020] In one or more embodiments, the electron transport layer can be arranged in multiple transmission regions.

[0021] In one or more embodiments, the first structuring layer can be arranged on the electron transport layer.

[0022] In one or more embodiments, the electron injection layer can be adjacent in a horizontal direction to a side surface of the first structuring layer.

[0023] In one or more embodiments, the electron transport layer and the electron injection layer can be arranged in the multiple transmission regions.

[0024] In one or more embodiments, the electron injection layer can be arranged in the multiple transmission regions between the electron transport layer and the first structuring layer.

[0025] In one or more embodiments, the thickness of the first structuring layer can be greater than or equal to the thickness of the second structuring layer.

[0026] In one or more embodiments, the thickness of the first structuring layer can be less than the thickness of the second structuring layer.

[0027] In one or more embodiments, the electron injection layer can contain an alkali metal.

[0028] In one or more embodiments, the thickness of the first structuring layer can be smaller than the sum of the thickness of the electron injection layer, the thickness of the first cathode electrode, and the thickness of the second cathode electrode.

[0029] In one or more embodiments, the thickness of the first structuring layer can be greater than or equal to the sum of the thickness of the electron injection layer, the thickness of the first cathode electrode, and the thickness of the second cathode electrode.

[0030] In one or more embodiments, the thickness of the first structuring layer can be greater than the thickness of the electron injection layer.

[0031] In one or more embodiments, the thickness of the second structuring layer can be greater than or equal to the thickness of the second cathode electrode.

[0032] In one or more embodiments, the display device may further comprise a first cover layer arranged on the first structuring layer, the second cathode electrode and the second structuring layer, a second cover layer arranged on the first cover layer, and an encapsulation layer arranged on the second cover layer.

[0033] In one or more embodiments, the refractive index of the first cover layer can be higher than the refractive index of the second cover layer and the refractive index of the second cathode electrode.

[0034] In one or more embodiments, the second cathode electrode can shield electromagnetic waves in an ultraviolet wavelength band.

[0035] In one or more embodiments, the display device may further comprise an optical electronic device arranged on a rear surface of the second area.

[0036] In one or more embodiments, the optical electronic device can perform a predefined operation using light that is transmitted through multiple transmission regions.

[0037] In one or more embodiments, the second cathode electrode can be adjacent to a side surface of the structuring layer in a horizontal direction.

[0038] According to embodiments, a display device can be created to increase luminous efficiency by arranging the second cathode electrode on top of the first cathode electrode in the optical area where the optical electronic device is located.

[0039] According to embodiments of the disclosure, a display device can be created which increases the luminous efficiency of an optical area and reduces a luminance deviation between the optical area and the normal area.

[0040] According to embodiments, a display device can be created that enables lower power control by creating a micro-cavity effect between the first cover layer and the second cover layer, which are arranged on the light-emitting element and the second cathode electrode, in order to increase the luminous efficiency.

[0041] According to embodiments, a display device can be created that can shield electromagnetic waves in UV bands emitted from outside the display panel by arranging the second cathode electrode in the optical area. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The foregoing and other tasks, features and advantages of the disclosure will be better understood by reference to the following detailed description in conjunction with the accompanying drawings; they show: Fig. 1, Fig. 2 and Fig. 3 a display device 100 according to embodiments of the disclosure; Fig. 4 a view of a configuration of a system of a display device of embodiments; Fig. 5 a display board according to one embodiment of the disclosure; Fig. 6 a view of an arrangement of subpixels in two areas contained in a display area of ​​a display panel according to embodiments of the disclosure; Fig. 7 A schematic cross-sectional view showing a section of a first emission region arranged in a normal area, and a schematic cross-sectional view showing a section of a second emission region and a transmission region arranged in an optical area as described in Fig. 6 is shown; Fig. 8 a cross-sectional view along the dashed line AA' in the normal area and the dashed line BB' in the optical area, which is in Fig. 6 is shown; Fig. 9 a schematic cross-sectional view for each area of ​​a display panel when a second cathode electrode is arranged in a second emission area according to embodiments of the disclosure; Fig. 10 a schematic cross-sectional view for each area of ​​a display panel when a first structuring layer is arranged on an electron injection layer in a transmission region of embodiments of the disclosure; Fig. 11 a view showing a normal area and an optical area of ​​a display panel of embodiments; Fig. 12 a view showing a normal area and an optical area of ​​a display panel of embodiments; Fig. 13 a view showing a normal area and an optical area of ​​a display panel of embodiments; Fig. 14 a view showing a normal area and an optical area of ​​a display panel of embodiments; Fig. 15 a subpixel-specific luminance efficiency table for each thickness of a second cathode electrode according to embodiments of the disclosure; and Fig. 16 a table showing the degree of shrinkage and luminance deterioration over time when a light-emitting element is irradiated with an electromagnetic wave in a UV band of embodiments. DETAILED DESCRIPTION

[0043] In the following description of examples or embodiments of the disclosure, reference is made to the accompanying drawings, which show specific examples or embodiments that can be implemented for illustrative purposes, and in which the same reference numerals and symbols can be used to denote identical or similar components, even if they are shown in separate, accompanying drawings. Furthermore, in the following description of examples or embodiments of the disclosure, precise descriptions of known functions and components included herein are omitted where it is determined that the description could obscure the subject matter in some embodiments of the disclosure.The terms used here, such as "comprise," "exhibit," "contain," "form," "consist of," and "formed of," are generally intended to allow the addition of other components, unless the terms are used with the term "only." As used here, singular forms are intended to include plural forms, unless the context clearly indicates otherwise.

[0044] Terms such as "first," "second," "A," "B," "(A)," or "(B)" may be used here to describe elements of revelation. Each of these terms is not used to define the nature, order, sequence, or number of the elements, etc., but merely to distinguish the respective element from other elements.

[0045] When it is mentioned that a first element is "connected or coupled" to a second element, "contacts or overlaps" it, etc., this should be interpreted to mean not only that the first element is "directly connected or coupled" to the second element, or that it directly "contacts or overlaps" it, but also that a third element may be "inserted" between the first and second elements, or that the first and second elements may be "connected or coupled," "contact or overlap," etc., via a fourth element. Here, the second element may be contained within at least one of two or more elements that are "connected or coupled," "contact or overlap," etc.

[0046] When temporal relational terms such as "after", "subsequently", "next", "before" and the like are used to describe processes or operations of elements or configurations or sequences or steps in operating, processing or manufacturing procedures, these terms may be used to describe non-consecutive or non-sequential processes or operations unless the term "directly" or "immediately" is used with them.

[0047] When dimensions, relative sizes, etc., are mentioned, it should also be considered that numerical values ​​for elements or features, or corresponding information (e.g., perimeter, area, etc.), have a tolerance or error range that can be caused by various factors (e.g., process factors, internal or external influences, noise, etc.), even if no corresponding description is provided. Furthermore, the term "possibly" encompasses all meanings of the term "may."

[0048] In the following, various embodiments of the disclosure are described in detail with reference to the attached drawings.

[0049] Fig. 1, Fig. 2 and Fig. Figure 3 shows a display device 100 according to embodiments.

[0050] With reference to Fig. 1, Fig. 2 and Fig. 3. A display device 100 according to embodiments of the disclosure may comprise a display panel 110 for displaying images and one or more optical electronic devices 11 and 12.

[0051] The scoreboard 110 can have a display area DA, in which images (videos) can be displayed, and a non-display area NDA, in which no images are displayed.

[0052] The DA display area can contain multiple subpixels, and the AA display area can contain various signal lines for controlling the multiple subpixels.

[0053] The non-display area (NDA) can be an area outside the display area (DA). Various signal lines and control circuits can be located within the NDA. The NDA may be curved so that it is not visible from the front, or it may be covered by a housing (not shown). The NDA is also referred to as a border or border area.

[0054] With reference to Fig. 1, Fig. 2 and Fig. 3 In the display device 100 according to embodiments of the disclosure, one or more optical electronic devices 11 and 12 electronic components are provided and installed separately from the display panel 110 and are positioned under the display panel 110 (on the side opposite the viewing surface).

[0055] Light enters the front surface (viewing surface) of the display panel 110 and passes through the display panel 110 to one or more optical electronic devices 11 and 12, which are positioned below the display panel 110 (opposite the viewing surface). The light passing through the display panel 110 can include, for example, visible light, infrared light, or ultraviolet light.

[0056] The one or more optical electronic devices 11 and 12 can be devices that receive the light passing through the display panel 110 and perform a predetermined function according to the received light. For example, the one or more optical electronic devices 11 and 12 can include a sensing device such as a camera (image sensor) and / or a detection sensor such as a proximity sensor and an illuminance sensor. The detection sensor can, for example, be an infrared sensor.

[0057] With reference to Fig. 1, Fig. 2 and Fig. 3. According to embodiments of the disclosure, the display area DA in the display panel 110 can comprise a normal area NA and one or more optical areas OA1 and OA2. The one or more optical areas OA1 and OA2 can be areas that overlap the one or more optical electronic devices 11 and 12.

[0058] According to the example of Fig. 1. The display area DA can comprise the normal area NA and the optical area OA. At least a portion of the optical area OA can overlap the first optical electronic device 11.

[0059] According to the example of Fig. 2. The display area DA can comprise a normal area NA, a first optical area OA1, and a second optical area OA2. In the example of Fig. 2. The normal area NA can exist between the first optical area OA1 and the second optical area OA2. At least one section of the first optical area OA1 can overlap with the first optical electronic device 11, and at least one section of the second optical area OA2 can overlap with the second optical electronic device 12.

[0060] According to the example of Fig. 3. The display area DA can comprise a normal area NA, a first optical area OA1, and a second optical area OA2. In the example of Fig. 3. The normal area NA between the first optical area OA1 and the second optical area OA2 is not present. In other words, the first optical area OA1 and the second optical area OA2 are in contact. At least one section of the first optical area OA1 can overlap with the first optical device 11, and at least one section of the second optical area OA2 can overlap with the second optical device 12.

[0061] The one or more optical areas OA1 and OA2 should have both an image display structure and a light transmission structure. In other words, since the one or more optical areas OA1 and OA2 are sub-areas of the display area DA, emission areas of subpixels for displaying images should be arranged in the one or more optical areas OA1 and OA2. A light transmission structure for transmitting light to the one or more optical electronic devices 11 and 12 should be formed in the one or more optical areas OA1 and OA2.

[0062] The one or more optical electronic devices 11 and 12 are devices that require light reception but are positioned behind (below, opposite the viewing surface) the display panel 110 in order to receive the light transmitted through the display panel 110. The one or more optical electronic devices 11 and 12 are not exposed on the front surface (viewing surface) of the display panel 110. Therefore, when the user looks at the front surface of the display panel 110, the optical electronic devices 11 and 12 are not visible to the user.

[0063] For example, the first optical electronic device 11 can be a camera and the second optical electronic device 12 a detection sensor, such as a proximity sensor or an illuminance sensor. For example, the detection sensor can be an infrared sensor that detects infrared rays. Conversely, the first optical electronic device 11 can be a detection sensor and the second optical electronic device 12 a camera.

[0064] For the sake of simplicity, it is assumed that the first optical electronic device 11 is a camera and the second optical electronic device 12 is an infrared (IR)-based detection sensor. The camera can be a camera lens or an image sensor.

[0065] If the first optical electronic device 11 is a camera, the camera can be a front camera positioned behind (below) the display panel 110, but recording in front of the display panel 110. Accordingly, the user can take a photograph with the camera, which is invisible on the viewing surface, while viewing the display panel 110.

[0066] The normal area NA and one or more optical areas OA1 and OA2, which are contained in the display area DA, are areas that can display images, but the normal area NA is an area that does not require any light transmission structure, and the one or more optical areas OA1 and OA2 are areas that do require a light transmission structure.

[0067] Accordingly, one or more optical areas OA1 and OA2 should have a transmittance greater than or equal to a certain value, and the normal area NA may have no light transmission or a transmittance lower than the certain value.

[0068] For example, the number of subpixels per unit area in one or more optical areas OA1 and OA2 can be smaller than the number of subpixels per unit area in the normal area NA. In other words, the resolution of one or more optical areas OA1 and OA2 can be lower than the resolution of the normal area NA. The number of subpixels per unit area can be understood as equivalent to resolution, pixel density, or pixel integration level. For example, the unit for the number of subpixels per unit area can be pixels per inch (PPI), which means the number of pixels in one inch.

[0069] For example, the number of subpixels per unit area in the first optical area OA1 can be less than the number of subpixels per unit area in the normal area NA. The number of subpixels per unit area in the second optical area OA2 can be greater than or equal to the number of subpixels per unit area in the first optical area OA1 and less than the number of subpixels per unit area in the normal area NA.

[0070] However, a pixel density difference design scheme as described above can be applied as a method for increasing the transmittance of the first optical area OA1 and / or the second optical area OA2. According to the pixel density difference design scheme, the display panel 110 can be designed such that the number of subpixels per unit area of ​​the first optical area OA1 and / or the second optical area OA2 is greater than the number of subpixels per unit area of ​​the normal area NA.

[0071] For the sake of simplicity, it is assumed that the pixel density difference design scheme is applied to increase the transmittance of the first optical area OA1 and / or the second optical area OA2. Accordingly, a low number of subpixels per unit area, as described below, may indicate a small subpixel size, and a high number of subpixels per unit area may indicate a large subpixel size.

[0072] The first optical area OA1 can have various shapes, such as a circle, an ellipse, a square, a hexagon, or an octagon. The second optical area OA2 can also have various shapes, such as a circle, an ellipse, a square, a hexagon, or an octagon. The first optical area OA1 and the second optical area OA2 can have the same shape or different shapes.

[0073] With reference to Fig. 3. The entire optical area, comprising the first optical area OA1 and the second optical area OA2, can have various shapes, such as a circle, an ellipse, a square, a hexagon, or an octagon, if the first optical area OA1 and the second optical area OA2 are touching. For the sake of simplicity, the first optical area OA1 and the second optical area OA2 are each represented as circular in the following description.

[0074] In the display device 100 according to embodiments of the disclosure, the display device 100 according to embodiments of the disclosure can be referred to as a display to which a sub-display camera technology (UDC technology) is applied if the first optical electronic device 11, which is not exposed externally and is concealed in a lower section of the display panel 100, is a camera.

[0075] Accordingly, the display device 100, according to embodiments of the disclosure, does not require a notch or camera hole for camera exposure that must be formed in the display panel 110, thus preventing a reduction in the display area DA. Since no notch or camera hole for camera exposure needs to be formed in the display panel 110, the size of the frame area can be reduced and design constraints can be eliminated, thereby increasing the degree of freedom in the design.

[0076] In the display device 100 according to embodiments of the disclosure, one or more optical electronic devices 11 and 12 are positioned such that they are hidden behind the display panel 110, but one or more optical electronic devices 11 and 12 should be able to perform predetermined functions normally by receiving light normally.

[0077] Furthermore, in the display device 100 according to embodiments of the disclosure, although one or more optical electronic devices 11 and 12 are positioned such that they are hidden behind the display panel 110 and overlap the display area DA, the one or more optical areas OA1 and OA2, which overlap the one or more optical electronic devices 11 and 12 in the display area DA, should be able to display images normally.

[0078] Since the first optical area OA1 mentioned above is designed as a transmission area, the image display characteristics in the first optical area OA1 may differ from the image display characteristics in the normal area NA.

[0079] Furthermore, when designing the first optical area OA1 to improve image display properties, the transmission coefficient of the first optical area OA1 may deteriorate.

[0080] For the sake of simplicity, it is assumed in the following description that the display device 100, according to the embodiments of the disclosure, has the structure of Fig. 1 under Fig. 1, Fig. 2 and Fig. 3. In other words, it is assumed that the display device 100, according to the embodiments of the disclosure, has an optical area OA. However, this is merely an assumption for the sake of simplifying the description, and the embodiments of the disclosure are not limited to it.

[0081] Fig. Figure 4 is a view showing a system configuration of a display device 100 according to embodiments of the disclosure.

[0082] With reference to Fig. 4 can include a display device 100, a display panel 110 and display control circuits as components for displaying images.

[0083] The display control circuits are circuits for controlling the display panel 110 and can include a data control circuit 430, a gate control circuit 440 and a display controller 420.

[0084] The display panel 110 can have a display area DA in which images are displayed and a non-display area NDA in which no images are displayed. The non-display area NDA can be an exterior area of ​​the display area DA and can be referred to as the border area. All or part of the non-display area NDA can be an area visible from the front surface of the display device 100, or it can be an area that is curved and not visible from the front surface of the display device 100.

[0085] The display panel 110 can comprise a substrate 400 and several subpixels SP arranged on the substrate 400. The display panel 110 can further comprise various types of signal lines for controlling the several subpixels SP.

[0086] The display device 100 according to embodiments of the disclosure can be a self-emission display device in which the display panel 110 itself emits light. However, the display device 100 according to embodiments of the disclosure is not limited to a self-emission display device.

[0087] The multiple data lines DL and the multiple gate lines GL can intersect. Each of the multiple data lines DL can be arranged to extend in a first direction. Each of the multiple gate lines GL can be arranged to extend in a second direction. The first direction can be a column direction and the second direction a row direction. Alternatively, the first direction can be the row direction and the second direction the column direction.

[0088] The data control circuit 430 is a circuit for controlling multiple data lines DL and can output data signals to these multiple data lines. The gate control circuit 440 is a circuit for controlling multiple gate lines GL and can output gate signals to these multiple gate lines.

[0089] The display controller 420 is a device for controlling the data control circuit 430 and the gate control circuit 440 and can control the control timing specifications for the multiple data lines DL and the control timing specifications for the multiple gate lines GL.

[0090] The display controller 420 can supply a data control signal DCS to the data control circuit 430 to control the data control circuit 430, and can supply a gate control signal GCS to the gate control circuit 440 to control the gate control circuit 440.

[0091] The display controller 420 can receive input image data from the host system 410 and deliver image data based on the input image data to the data control circuit 430.

[0092] The data control circuit 430 can receive digital image data Data from the display controller 420 and convert the received image data Data into analog data signals and output the analog data signals to the multiple data lines DL.

[0093] The gate drive circuit 440 can receive a first gate voltage corresponding to a turn-on level voltage and a second gate voltage corresponding to a turn-off level voltage, along with various gate drive signals GCS, generate gate signals and supply the generated gate signals to the multiple gate lines GL.

[0094] The display device 100 may further include a power supply circuit for supplying various types of power to the display control circuit.

[0095] The display device 100 according to embodiments of the disclosure can be a mobile terminal device such as a smartphone or a tablet or a monitor or television (TV) of various sizes, but can, without being limited thereto, be a display of various types and sizes that can display information or images.

[0096] As described above, the display area DA in the scoreboard 110 can have the normal area NA and an optical area OA. Both the normal area NA and the optical area OA are areas capable of displaying an image. However, the normal area NA is an area where no light transmission structure is required, while the optical area OA is an area where a light transmission structure is required.

[0097] Fig. Figure 5 shows a display panel 110 according to one embodiment of the disclosure.

[0098] With reference to Fig. 5. Several subpixels SP can be arranged in the display area DA of the display panel 110. The several subpixels SP can be arranged in the normal area NA and in the optical area OA, which are contained in the display area DA.

[0099] With reference to Fig. 5 Each of the multiple subpixels SP can include a light-emitting element ED and a subpixel circuit SPC designed to control the light-emitting element ED.

[0100] With reference to Fig. 5. The subpixel circuit SPC can include a drive transistor DT for driving the light-emitting element ED, a sampling transistor ST for transferring the data voltage VDATA to the drive transistor DT, and a storage capacitor Cst for maintaining a constant voltage during a single image.

[0101] The driver transistor DT can comprise a first node N1, a second node N2, and a third node N3. The first node N1 can be connected to the light-emitting element ED. The second node N2 can be connected to the sampling transistor ST. The third node N3 can be connected to the drive voltage line VDDL. The first node N1 can be electrically connected to the pixel electrode PE of the light-emitting element ED. A data voltage VDATA can be applied to the second node N2. A drive voltage VDD can be applied to the third node N3. The first node N1 can be the source node or the drain node, the second node N2 can be the gate node, and the third node N3 can be either the drain node or the source node.To simplify the description, an example is described below in which the first node N1 in the control transistor DT is the source node, the second node N2 is the gate node and the third node N3 is the drain node.

[0102] The light-emitting element ED can comprise a pixel electrode PE, an intermediate layer EL, and a common electrode CE. The pixel electrode PE can be an electrode located in each subpixel SP. For example, the pixel electrode PE can be electrically connected directly or indirectly (via another transistor) to the first node N1 of the drive transistor DT of each subpixel SP. The common electrode CE can be an electrode located in multiple subpixels SP. For example, the common electrode CE can receive a base voltage VSS, which acts as a common drive voltage, via a base voltage line VSSL. For example, the pixel electrode PE can be an anode electrode and the common electrode CE a cathode electrode. Conversely, the pixel electrode PE can be a cathode electrode and the common electrode CE an anode electrode.For the sake of simplicity, it is assumed in the following that the pixel electrode PE is an anode electrode and the common electrode CE is a cathode electrode.

[0103] The intermediate layer EL can comprise a light-emitting layer EML and a common intermediate layer EL_COM.

[0104] The light-emitting layer (EML) can be located in the emission region of each of the multiple subpixels (SP). For example, the light-emitting layer (EML) can be located only in each of the subpixels (SP). Alternatively, the light-emitting layer (EML) can be located across the multiple subpixels (SP). Another example is that the light-emitting layer (EML) can be located only in the emission region. Finally, the light-emitting layer (EML) can be located in both the emission and non-emission regions.

[0105] The shared intermediate layer EL_COM can be arranged across multiple subpixels SP. The shared intermediate layer EL_COM can also be arranged across multiple emission and non-emission regions EA.

[0106] The common intermediate layer EL_COM can comprise a first common intermediate layer COM1 and a second common intermediate layer COM2. The first common intermediate layer COM1 can be located between the pixel electrode PE and the light-emitting layer EML and can comprise at least one layer (e.g., an organic layer). The second common intermediate layer COM2 can be located between the light-emitting layer EML and the common electrode CE and can also comprise at least one layer (e.g., an organic layer).

[0107] For example, the first common intermediate layer COM1 can comprise a hole injection layer (HIL) and a hole transport layer (HTL). The second common intermediate layer COM2 can comprise an electron transport layer (ETL) and an electron injection layer (EIL). The hole injection layer (HIL) can inject holes from the pixel electrode (PE) into the hole transport layer (HTL), and the hole transport layer (HTL) can transport holes to the light-emitting layer (EML). The electron injection layer (EIL) can inject electrons from the common electrode (CE) into the electron transport layer (ETL), and the electron transport layer (ETL) can transport electrons to the light-emitting layer (EML).In addition to the hole injection layer (HIL), hole transport layer (HTL), electron injection layer (EIL), and electron transport layer (ETL) described above, further layers can be arranged in the first common intermediate layer (COM1) and the second common intermediate layer (COM2). This can correspond to the typically developed OLED device structure.

[0108] Each light-emitting element (ED) can have sections where the pixel electrode (PE), the light-emitting layer (EML) in the intermediate layer (EL), and the common electrode (CE) overlap. A predetermined emission region (EA) can be formed by the light-emitting element ED. The emission region (EA) can be defined, for example, as a section where the pixel electrode (PE), the light-emitting layer (EML) of the intermediate layer (EL), and the common electrode (CE) overlap. For example, the light-emitting element ED can be an organic light-emitting diode (OLED) based on an organic material, an inorganic light-emitting diode (LED) based on an inorganic material, or a quantum dot light-emitting element. If the light-emitting element ED is an organic light-emitting diode, the intermediate layer (EL) of the light-emitting element ED can include an organic layer containing an organic material.

[0109] The sampling transistor ST can be controlled in such a way that it is switched on and off by the sampling signal SC, which is a kind of gate signal, applied via the sampling signal line SCL, which is a kind of gate line GL, and is electrically connected between the second node N2 of the control transistor DT and the data line DL.

[0110] The storage capacitor Cst can be electrically connected between the first node N1 and the second node N2 of the control transistor DT.

[0111] As it is in Fig. As shown in Figure 3, the subpixel circuit SPC can have a 2T1C structure (2-transistor-1-capacitor structure) comprising two transistors DT and ST and one capacitor Cst. In some cases, the subpixel circuit SPC may further include one or more transistors or one or more capacitors.

[0112] The capacitor Cst can be an external capacitor intentionally designed to be located outside the driver transistor DT, but it cannot be a parasitic capacitor (e.g., Cgs or Cgd), which is an internal capacitor that may be present between the first node N1 and the second node N2 of the driver transistor DT. The driver transistor DT and the sampling transistor ST can each be either an n-type or a p-type transistor.

[0113] Since the circuit elements (in particular the light-emitting element ED implemented as an organic light-emitting diode (OLED) containing an organic material) in each subpixel SP are susceptible to external moisture or oxygen, an encapsulation layer 500 can be arranged on the display panel 110 to prevent the ingress of external moisture or oxygen into the circuit elements (in particular the light-emitting element ED). The encapsulation layer 500 can be arranged to cover the light-emitting elements ED.

[0114] Fig. Figure 6 is a view showing an arrangement of subpixels SP in two areas NA and OA, which are contained in a display area DA of a display panel 110 according to embodiments of the disclosure.

[0115] With reference to Fig. 6. Several subpixels SP can be arranged in the normal area NA and the optical area OA, respectively, which are contained in the display area DA.

[0116] For example, multiple subpixels SP can include a red subpixel Red SP that emits red light, a green subpixel Green SP that emits green light, and a blue subpixel Blue SP that emits blue light.

[0117] Accordingly, the normal area NA and the optical area OA can each include emission areas EA of the red subpixel Red SP, emission areas EA of the green subpixel Green SP and emission areas EA of the blue subpixel Blue SP.

[0118] With reference to Fig. 6. The normal area NA may not include a light transmission structure, but may include emission areas EA.

[0119] However, the optical area OA should include not only the emission areas EA, but also a light transmission structure.

[0120] Thus, the optical range OA can include emission ranges EA and a transmission range TA.

[0121] Emission ranges (EA) and transmission ranges (TA) can be distinguished by whether they allow light to pass through. In other words, emission ranges (EA) can be areas through which no light can pass, and transmission ranges (TA) can be areas through which light can pass.

[0122] Furthermore, the emission regions EA and the transmission region TA can be distinguished depending on the presence or absence of a specific metal layer CE. For example, a common electrode CE may be present in the emission regions EA, while no common electrode CE is present in the transmission region TA. A light-shielding layer may be present in the emission regions EA, while no light-shielding layer is present in the transmission region TA.

[0123] Since the optical range OA includes the transmission range TA, the optical range OA is a range through which light can pass.

[0124] As it is in Fig. As shown in Figure 6, in embodiments of the disclosure the transmission area TA can also be referred to as the transparent area and the light transmittance can also be referred to as transparency.

[0125] As it is in Fig. As shown in Figure 6, in embodiments of the disclosure it is assumed that the optical area OA is positioned at the upper end of the display area DA of the display panel 110.

[0126] Fig. Figure 7 is a schematic cross-sectional view showing a section of a first emission region EA1 arranged in a normal region NA, and a schematic cross-sectional view showing a section of a second emission region EA2 and a transmission region TA arranged in an optical region OA, as shown in Fig. 6 is shown.

[0127] A cross-sectional view of the normal area NA is shown schematically with reference to Fig. 7 described.

[0128] The normal area NA can include a first emission area EA1. A planarization layer 700 can be located in the first emission area EA1.

[0129] A first anode electrode 710 can be arranged on the planarization layer 700 of the first emission region EA1. The first anode electrode 710 can functionally have the same configuration as the pixel electrode PE described above with reference to Fig. 5 is described. A hole injection layer 730 can be arranged on the first anode electrode 710. A hole transport layer 740 can be arranged on the hole injection layer 730. A first light-emitting layer 750 can be arranged on the hole transport layer 740. An electron transport layer 770 can be arranged on the first light-emitting layer 750. An electron injection layer 780 can be arranged on the electron transport layer 770. A first cathode electrode 790 can be arranged on the electron injection layer 780. The first cathode electrode 790 can functionally have the same configuration as the common electrode CE described above with reference to Fig. 5 is described.

[0130] The first anode electrode 710, the hole injection layer 730, the hole transport layer 740, the first light-emitting layer 750, the electron transport layer 770, the electron injection layer 780 and the first cathode electrode 790 can form a light-emitting element ED.

[0131] Here, the first anode electrode 710, the hole injection layer 730, the hole transport layer 740, the first light-emitting layer 750, the electron transport layer 770, the electron injection layer 780, and the first cathode electrode 790 can functionally have the same configuration as the pixel electrode PE, the hole injection layer HIL, the hole transport layer HTL, the light-emitting layer EML, the electron injection layer EIL, and the common electrode CE, which are described above with reference to Fig. 5 are described.

[0132] A first coating layer 7100 can be arranged on the first cathode electrode 790 of the first emission region EA1. A second coating layer 7110 can be arranged on top of the first coating layer 7100. The first coating layer 7100 and the second coating layer 7110 can be formed together during a deposition process for organic material, and their material can be organic or inorganic.

[0133] An encapsulation layer 500 can be arranged on the second cover layer 7110. The encapsulation layer 500 can have a single-layer or a multi-layer structure. A specific example is shown in the cross-sectional view of Fig. 8 described.

[0134] Next, the optical region OA can include a second emission region EA2 and a transmission region TA.

[0135] With reference to Fig. 7. The second emission region EA2 can have the same configuration as the first emission region EA1 of the normal region NA described above. However, it can contain a second anode electrode 720 and a second light-emitting layer 760, which differ from the first anode electrode 710 and the first light-emitting layer 750 contained in the first emission region EA1.

[0136] Accordingly, the planarization layer 700 can be arranged in the second emission region EA2, and the second anode electrode 720, which is a component separate from the first anode electrode 710, can be arranged on the planarization layer 700. A hole injection layer 730 can be arranged on the second anode electrode 720. A hole transport layer 740 can be arranged on the hole injection layer 730. A second light-emitting layer 760, which is a component separate from the first light-emitting layer 750, can be arranged on the hole transport layer 740. An electron transport layer 770 can be arranged on the second light-emitting layer 760. An electron injection layer 780 can be arranged on the electron transport layer 770. A first cathode electrode 790 can be arranged on the electron injection layer 780.

[0137] The second anode electrode 720, the hole injection layer 730, the hole transport layer 740, the second light-emitting layer 760, the electron transport layer 770, the electron injection layer 780 and the first cathode electrode 790 can form a light-emitting element ED that may be different from the light-emitting element ED contained in the first emission region EA1.

[0138] Here, the second anode electrode 720, the hole injection layer 730, the hole transport layer 740, the second light-emitting layer 760, the electron transport layer 770, the electron injection layer 780, and the first cathode electrode 790 can functionally have the same configuration as the pixel electrode PE, the hole injection layer HIL, the hole transport layer HTL, the light-emitting layer EML, the electron injection layer EIL, and the common electrode CE, which are described above with reference to Fig. 5 are described.

[0139] A first coating layer 7100 can be arranged on the first cathode electrode 790 of the second emission region EA2. A second coating layer 7110 can be arranged on the first coating layer 7100. An encapsulation layer 500 can be arranged on the second coating layer 7110.

[0140] Next, a planarization layer 700 can be arranged in the transmission region TA. A hole injection layer 730 can be arranged on the planarization layer 700 in the transmission region TA. A hole transport layer 740 can be arranged on the hole injection layer 730. An electron transport layer 770 can be arranged on the hole transport layer 740. The first structuring layer 900 can be arranged on the electron transport layer 770.

[0141] The first structuring layer 900 can be formed from an organic carbon material such as 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), but this disclosure is not limited to this. Since the first structuring layer 900 exhibits low adhesion, where the surface energy of the material itself is low or the interfacial energy between the metal and the structuring layer is high, the probability of metal desorption from the surface of the first structuring layer 900 during metal deposition is significantly increased, and metal nucleation does not occur. In other words, the first structuring layer 900 can serve to prevent the first cathode electrode 790 from forming in the transmission region TA. Thus, a cathode hole can be formed in the transmission region TA of the optical region OA.

[0142] Therefore, the first cathode electrode 790 may not be arranged on the first structuring layer 900, but rather on the first cover layer 7100. A second cover layer 7110 may be arranged on the first cover layer 7100. An encapsulation layer 500 may be arranged on the second cover layer 7110.

[0143] In other words, unlike the first emission region EA1 and the second emission region EA2, the pixel electrode PE, the light-emitting layer EML, and the first cathode electrode 790 may not be located in the transmission region TA. However, the light-emitting layer EML may be located between the hole transport layer 740 and the electron transport layer 770 in the transmission region TA.

[0144] The following is related to Fig. 8 describes the overall cross-sectional view between the substrate 400 and the encapsulation layer 500 and not the schematic cross-sectional structure of the display panel 110.

[0145] Fig. Figure 8 is a cross-sectional view along the dashed line AA' of the normal area NA of Fig. 6 and along the dashed line BB' of the optical area OA.

[0146] In Fig. However, for the sake of simplicity, Figure 8 represents the hole injection layer 730, the hole transport layer 740, the electron transport layer 770 and the electron injection layer 780, which are described above with reference to Fig. The components described in section 7 have been omitted. The omitted components can be arranged in the same way as the structure of the light-emitting element ED of the conventional organic light-emitting diode (OLED).

[0147] The cross-sectional structure of the normal area NA is described with reference to Fig. As described in section 8, the substrate 400 can comprise a first substrate 800, an interlayer insulating film 810, and a second substrate 820. The interlayer insulating film 810 can be positioned between the first substrate 800 and the second substrate 820. By forming the substrate 400 with the first substrate 800, the interlayer insulating film 810, and the second substrate 820, it is possible to prevent the ingress of moisture. For example, the first substrate 800 and the second substrate 820 can be polyimide substrates (PI substrates). The first substrate 800 can be referred to as the primary PI substrate, and the second substrate 820 as the secondary PI substrate.

[0148] With reference to Fig. 8 different patterns ACT, 890 and GATE can be arranged on the substrate to form a transistor such as a drive transistor DRT, various insulating films 830, 840, 850, 860, 870, 880 and 8100 and various metal patterns TM, GM, ML1 and ML2.

[0149] With reference to Fig. 8. A multi-buffer layer 830 can be arranged on the second substrate 820. A first active buffer layer 840 can be arranged on the multi-buffer layer 830.

[0150] A first metal layer ML1 and a second metal layer ML2 can be arranged on the first active buffer layer 840. The first metal layer ML1 and the second metal layer ML2 can form a light-shielding layer LS for shielding light.

[0151] A second active buffer layer 850 can be arranged on the first metal layer ML1 and the second metal layer ML2. An active layer ACT of the driver transistor DRT can be arranged on the second active buffer layer 850.

[0152] A Gate 860 insulating film can be arranged to cover the active layer ACT.

[0153] A gate electrode GATE of the driver transistor DRT can be arranged on the gate insulating film 860. In this case, a gate material layer GM can be arranged on the gate insulating film 860 at a position different from the position where the driver transistor DRT is formed, together with the gate electrode GATE of the driver transistor DRT.

[0154] The first interlayer insulating film 870 can be arranged to cover the gate electrode GATE and the gate material layer GM. A metal pattern TM can be arranged on the first interlayer insulating film 870. The metal pattern TM can be located at a different position than the position where the drive transistor DRT is formed. The second interlayer insulating film 880 can be arranged to cover the metal pattern TM on the first interlayer insulating film 870.

[0155] Two first source-drain electrode patterns 890 can be arranged on the second interlayer insulating film 880. One of the two first source-drain electrode patterns 890 is the source node of the drive transistor DRT, and the other is the drain node of the drive transistor DRT. The two first source-drain electrode patterns 890 can be electrically connected to the two opposite sides of the active layer ACT via the contact hole of the second interlayer insulating film 880, the first interlayer insulating film 870, and the gate insulating film 860.

[0156] A section of the active layer ACT that overlaps the gate electrode GATE is a channel region. One of the first two source-drain electrode patterns 890 can be connected to one side of the channel region in the active layer ACT, and the other of the first two source-drain electrode patterns 890 can be connected to the other side of the channel region in the active layer ACT.

[0157] A passivation layer 8100 is arranged to cover the first two source-drain electrode patterns 890. A planarization layer 700 can be arranged on top of the passivation layer 8100. The planarization layer 700 can comprise a first planarization layer 8110 and a second planarization layer 8130.

[0158] The first planarization layer 8110 can be arranged on the passivation layer 8100.

[0159] A second source-drain electrode pattern 8120 can be arranged on the first planarization layer 8110. The second source-drain electrode pattern 8120 can be connected to one of the first two source-drain electrode patterns 890 (corresponding to the first node N1 of the drive transistor DRT in the subpixel SP in Fig. 5) be connected via the contact hole of the first planarization layer 8110.

[0160] The second planarization layer 8130 can be arranged to cover the second source-drain electrode pattern 8120.

[0161] A light-emitting element ED can be arranged on the second planar layer 8130. In the stacked structure of the light-emitting element ED, the first anode electrode 710 can be arranged on the second planar layer 8130. The first anode electrode 710 can be electrically connected to the second source-drain electrode pattern 8120 via the contact hole CNT of the second planar layer 8130.

[0162] Bank 8140 can be arranged to cover a section of the first anode electrode 710. A section of bank 8140 corresponding to the first emission region EA1 of subpixel SP can be open.

[0163] A section of the first anode electrode 710 may be exposed through an opening (an open section) of the bank 8140. A first light-emitting layer 750 may be positioned on a side face of the bank 8140 and the opening (the open section) of the bank 8140. The entirety or a section of the first light-emitting layer 750 may be positioned between adjacent banks 8140. The first light-emitting layer 750 may have the same configuration as described above in conjunction with Fig. The 5 described light-emitting layer EML has a light-emitting layer. In the opening of bank 8140, the first light-emitting layer 750 can contact the first anode electrode 710.

[0164] A first cathode electrode 790 can be arranged on the first light-emitting layer 750 and the bank 8140. The first cathode electrode 790 can be arranged over the entire surface of the normal area NA.

[0165] A light-emitting element ED can be formed by the first anode electrode 710, the first light-emitting layer 750 and the first cathode electrode 790.

[0166] A first coating layer 7100 can be arranged on the first cathode electrode 790. A second coating layer 7110 can be arranged on top of the first coating layer 7100. In this case, the refractive index of the first coating layer 7100 can be higher than the refractive index of the second coating layer 7110. For example, the refractive index of the first coating layer 7100 can be 1.8 or higher. The refractive index of the second coating layer 7110 can be lower than the refractive index of the first coating layer 7100. For example, the refractive index of the second coating layer 7110 can be 1.4.

[0167] By arranging the first cover layer 7100 and the second cover layer 7110, which have different refractive indices, on the first cathode electrode 790, a microcavity effect can be created by light reflection occurring at the interface of each layer. Accordingly, the luminance of the light emerging from the area where the first cover layer 7100 and the second cover layer 7110 are arranged can be increased to improve the luminous efficiency.

[0168] Meanwhile, in Fig. Although only the first cover layer 7100 and the second cover layer 7110 are shown in Figure 8, the disclosure is not limited to this. For example, a third cover layer and a fourth cover layer, having different refractive indices, could additionally be arranged on the second cover layer 7110. However, for the sake of simplicity, the disclosure describes an example in which the first cover layer 7100 and the second cover layer 7110 are arranged.

[0169] The encapsulation layer 500 can be arranged on the second cover layer 7110. The encapsulation layer 500 can have a single-layer or a multi-layer structure. For example, the encapsulation layer 500, as shown in Fig. Figure 8 shows a first encapsulation layer 8150, a second encapsulation layer 8160 and a third encapsulation layer 8170.

[0170] For example, the first encapsulation layer 8150 and the third encapsulation layer 8170 can be inorganic films, and the second encapsulation layer 8160 can be an organic film. Beneath the first encapsulation layer 8150, the second encapsulation layer 8160, and the third encapsulation layer 8170, the second encapsulation layer 8160 can be the thickest and serve as a planarizing layer.

[0171] The first encapsulation layer 8150 can be arranged on the second cover layer 7110 and can be positioned closest to the second cover layer 7100. The first encapsulation layer 8150 can be formed from an inorganic insulating material that allows for low-temperature deposition. For example, the first encapsulation layer 8150 can be formed from silicon nitride (SiNx), silicon dioxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3). Since the first encapsulation layer 8150 is deposited in a low-temperature atmosphere, it can prevent the first light-emitting layer 750, which contains an organic material sensitive to high-temperature atmospheres, from being damaged during the deposition process.

[0172] The second encapsulation layer 8160 can have a surface area smaller than that of the first encapsulation layer 8150. In this case, the second encapsulation layer 8160 can be configured to expose two opposite ends of the first encapsulation layer 8150. The second encapsulation layer 8160 can act as a buffer to compensate for mechanical stresses between the layers due to bending of the display device 100 and can also serve to improve planarity. For example, the second encapsulation layer 8160 can be an acrylic resin, an epoxy resin, polyimide, polyethylene, silicon oxycarbon (SiOC), or the like, and can be formed from an organic insulating material. For example, the second encapsulation layer 8160 can be formed by an inkjet process.

[0173] The third encapsulation layer 8170 can be formed on the substrate 400, on which the second encapsulation layer 8160 is formed, such that it covers the top surface and the side surface of the second encapsulation layer 8160 and the first encapsulation layer 8150. The third encapsulation layer 8170 can minimize or prevent the penetration of moisture or oxygen from the outside into the first encapsulation layer 8150 and the second encapsulation layer 8160. For example, the third encapsulation layer 8170 consists of an inorganic insulating material such as silicon nitride (SiNx), silicon dioxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3).

[0174] Next, with reference to Fig. 8 a stacked structure for the optical area OA described.

[0175] With reference to Fig. 8. The second emission region EA2 in the optical region OA fulfills the same function as the first emission region EA1 in the normal region NA, but may include a second anode electrode 720 and a second light-emitting layer 760, which are physically separate components. With the exception of the second anode electrode 720 and the second light-emitting layer 760 of the second emission region EA2, the remaining components may have the same stacked structure as that of the first emission region EA1. Therefore, the stacked structure of the transmission region TA in the optical region OA is described in detail below.

[0176] The first cathode electrode 790 is located in the first emission region EA1 and in the second emission region EA2, which are located in the normal region NA and the optical region OA, respectively. However, the first cathode electrode 790 may not be located in the transmission region TA within the optical region OA. In other words, the transmission region TA within the optical region OA may correspond to the aperture of the first cathode electrode 790.

[0177] To form an opening for the first cathode electrode 790 in the transmission region TA, a first structuring layer 900 can be arranged in the transmission region TA. If the first structuring layer 900 is arranged in the region corresponding to the transmission region TA before the first cathode electrode 790 is placed on the second light-emitting layer 760, the first cathode electrode 790, if placed later, can be located in a different region than the first structuring layer 900. Therefore, the first structuring layer 900 can be arranged on the planarization layer 700 and the bank 8140 in the region corresponding to the transmission region TA. As another example, if the light-emitting layer is located in the transmission region TA, the first structuring layer 900 can be arranged on the light-emitting layer.

[0178] Furthermore, the light-shielding layer LS, comprising at least one of the first and second metal layers ML1 and ML2, is located in the first emission region EA1, which is contained in the normal region NA, and in the second emission region EA2, which is contained in the optical region OA, but the light-shielding layer LS may not be located in the transmission region TA within the optical region OA. In other words, the transmission region TA within the optical region OA may correspond to the aperture of the light-shielding layer LS.

[0179] The substrate 400 and various insulating films 830, 840, 850, 860, 870, 880 and 8100, which are arranged in the first emission range EA1, which is contained in the normal range NA, and the second emission range EA2, which is contained in the optical range OA, can be arranged uniformly in the transmission range TA.

[0180] In addition to the insulating material in the first emission region EA1 and the second emission region EA2, a material layer (e.g., a metal material layer, a semiconductor layer, etc.) that has electrical properties may not be located in the transmission region TA in the optical region OA.

[0181] For example, with reference to Fig. 8 the metal material layers ML1, ML2, GATE, GM, TM, 890 and 8120 and the semiconductor layer ACT, which are associated with the transistor, are not located in the transmission region TA in the optical region OA.

[0182] With reference to Fig. The first anode electrode 710, the second anode electrode 720, and the first cathode electrode 790, contained in the light-emitting element ED, may or may not be located in the transmission region TA within the optical region OA. However, the first emission layer 750 and the second emission layer 760 may or may not be located in the transmission region TA within the optical region OA.

[0183] Therefore, the light transmittance of the transmission region TA in the optical region OA can be ensured by the absence of any material layer (e.g., metal material layer, semiconductor layer, etc.) possessing electrical properties within the transmission region TA of the optical region OA. Consequently, the first optical electronic device 11 can receive light transmitted through the transmission region TA and perform its corresponding function (e.g., detecting the approach of an object or a human body, detecting the external illuminance, etc.).

[0184] However, by developing the transmission area TA to increase the transmittance of the optical area OA, the number of subpixels SP arranged in the optical area OA per unit area can be reduced. Consequently, a luminance deviation can occur due to a difference in the number of subpixels SP between the normal area NA and the optical area OA. This luminance deviation between the normal area NA and the optical area OA can lead to a deterioration in aesthetic perfection and impose limitations on the design of the front section of the display panel 110.

[0185] In one embodiment of the disclosure, the problem of luminance deviation between the normal area NA described above and the optical area OA can be solved by arranging the second cathode electrode 920 in the optical area OA.

[0186] Fig. Figure 9 is a schematic cross-sectional view for each area of ​​a display panel 110 when a second cathode electrode 920 is arranged in a second emission area EA2 according to embodiments of the disclosure.

[0187] A cross-sectional view of the normal area NA is shown schematically with reference to Fig. 9 described.

[0188] The normal area NA can include a first emission area EA1. A planarization layer 700 can be located in the first emission area EA1.

[0189] A first anode electrode 710 can be arranged on the planarization layer 700 of the first emission region EA1. The first anode electrode 710 can functionally have the same configuration as the pixel electrode PE described above with reference to Fig. 5 is described. A hole injection layer 730 can be arranged on the first anode electrode 710. A hole transport layer 740 can be arranged on the hole injection layer 730. A first light-emitting layer 750 can be arranged on the hole transport layer 740. An electron transport layer 770 can be arranged on the first light-emitting layer 750. An electron injection layer 780 can be arranged on the electron transport layer 770. A first cathode electrode 790 can be arranged on the electron injection layer 780. The first cathode electrode 790 can functionally have the same configuration as the common electrode CE described above with reference to Fig. 5 is described.

[0190] The first anode electrode 710, the hole injection layer 730, the hole transport layer 740, the first light-emitting layer 750, the electron transport layer 770, the electron injection layer 780 and the first cathode electrode 790 can form a light-emitting element ED.

[0191] Here, the first anode electrode 710, the hole injection layer 730, the hole transport layer 740, the first light-emitting layer 750, the electron transport layer 770, the electron injection layer 780, and the first cathode electrode 790 can functionally have the same configuration as the pixel electrode PE, the hole injection layer HIL, the hole transport layer HTL, the light-emitting layer EML, the electron injection layer EIL, and the common electrode CE, which are described above with reference to Fig. 5 are described.

[0192] In this case, the electron injection layer 780 can contain a metallic material and an alkali metal such as lithium fluoride (LiF).

[0193] A second structuring layer 910 can be arranged on the first cathode electrode 790 of the first emission region EA1. The second structuring layer 910 can have the same properties as the first structuring layer 900, which are described above with reference to Fig. 7 is described. For example, the second structuring layer 910 may have low adhesion, where the surface energy of the material itself is low or the interfacial energy between the metal and the structuring layer is high. Therefore, the probability of metal desorption on the surface of the second structuring layer 910 during metal deposition increases significantly, and metal nucleation does not occur. In other words, the second structuring layer 910 can prevent the second cathode electrode 920, described below, from forming on the second structuring layer 910 of the first emission region EA1.

[0194] A first cover layer 7100 can be arranged on the second structuring layer 910 of the first emission region EA1. A second cover layer 7110 can be arranged on the first cover layer 7100. The first cover layer 7100 and the second cover layer 7110 can be formed together during a deposition process for organic material, and their material can be organic or inorganic.

[0195] An encapsulation layer 500 can be arranged on the second cover layer 7110. The encapsulation layer 500 can have a single-layer or a multi-layer structure.

[0196] Next, the optical region OA can include a second emission region EA2 and a transmission region TA.

[0197] With reference to Fig. 9. The second emission region EA2 can have a similar structure to the first emission region EA1 described above. In the first emission region EA1, the second structuring layer 910 is arranged between the first cathode electrode 790 and the first cover layer 7100, but in the second emission region EA2, the second cathode electrode 920 is arranged between the first cathode electrode 790 and the first cover layer 7100.

[0198] Accordingly, the planarization layer 700 can be arranged in the second emission region EA2, and the second anode electrode 720, which is a component separate from the first anode electrode 710, can be arranged on the planarization layer 700. A hole injection layer 730 can be arranged on the second anode electrode 720. A hole transport layer 740 can be arranged on the hole injection layer 730. A second light-emitting layer 760, which is a component separate from the first light-emitting layer 750, can be arranged on the hole transport layer 740. An electron transport layer 770 can be arranged on the second light-emitting layer 760. An electron injection layer 780 can be arranged on the electron transport layer 770. A first cathode electrode 790 can be arranged on the electron injection layer 780.

[0199] In this case, the electron injection layer 780 can contain a metal material and an alkali metal such as lithium fluoride (LiF).

[0200] The second anode electrode 720, the hole injection layer 730, the hole transport layer 740, the second light-emitting layer 760, the electron transport layer 770, the electron injection layer 780 and the first cathode electrode 790 can form a light-emitting element ED, which may be different from the light-emitting element D contained in the first emission region EA1.

[0201] The second anode electrode 720, the hole injection layer 730, the hole transport layer 740, the second light-emitting layer 760, the electron transport layer 770, the electron injection layer 780, and the first cathode electrode 790 can functionally have the same configuration as the pixel electrode PE, the hole injection layer HIL, the hole transport layer HTL, the light-emitting layer EML, the electron injection layer EIL, and the common electrode CE, which are described above in relation to Fig. 5 are described, exhibit.

[0202] A second cathode electrode 920 can be positioned on top of the first cathode electrode 790 of the second emission region EA2. Since the second cathode electrode 920 is positioned on top of the first cathode electrode 790, a microcavity effect (resonance) can be induced by light reflection occurring at the interface of each layer. Accordingly, it is possible to increase the luminance of the second emission region EA2. To induce a microcavity effect between the first cathode electrode 790 and the second cathode electrode 920, the first cathode electrode 790 and the second cathode electrode 920 can be arranged to have different refractive indices. Furthermore, the thickness of the second cathode electrode 920 can be variably adjusted. For example, the thickness of the second cathode electrode 920 can be selected between 1 nm and 4 nm. However, the thickness of the second cathode electrode 920 is not limited to this range.

[0203] A first coating layer 7100 can be arranged on the second cathode electrode 920 in the second emission region EA2. A second coating layer 7110 can be arranged on top of the first coating layer 7100. The first coating layer 7100 and the second coating layer 7110 can be arranged such that they have different refractive indices.

[0204] Therefore, the first cathode electrode 790, the second cathode electrode 920, the first cover layer 7100, and the second cover layer 7110 of the second emission region EA2 described above can be arranged to have different refractive indices in order to create a microcavity effect. This can increase the luminous efficiency of the light emitted from the second emission region EA2.

[0205] For example, the first cathode electrode 790 can have a refractive index greater than or equal to 1.8. The second cathode electrode 920 can have a refractive index of 1.4. The first cover layer 7100 can have a refractive index greater than or equal to 1.8. The second cover layer 7110 can have a refractive index of 1.4. Thus, the light emitted from the second light-emitting layer 760 of the second emission region EA2 can be amplified by the microcavity effect as it passes through the first cathode electrode 790, the second cathode electrode 920, the first cover layer 7100, and the second cover layer 7110, which have different refractive indices.

[0206] However, this is merely an example for illustration, and the disclosure is not limited to the structure described above. For instance, the first cathode electrode 790, the second cathode electrode 920, the first cover layer 7100, and the second cover layer 7110 may have refractive indices that differ from those described above. Furthermore, a third cover layer and a fourth cover layer, not shown in the drawings, may additionally be arranged on the second cover layer 7110.

[0207] An encapsulation layer 500 can be arranged on the second cover layer 7110.

[0208] Next, with reference to Fig. 9. A planarization layer 700 may be arranged in the transmission region TA. A hole injection layer 730 may be arranged on the planarization layer 700 in the transmission region TA. A hole transport layer 740 may be arranged on the hole injection layer 730. An electron transport layer 770 may be arranged on the hole transport layer 740. The first structuring layer 900 may be arranged on the electron transport layer 770.

[0209] The first structuring layer 900 can have the same properties as the second structuring layer 910, which is located in the first emission region EA1. The first structuring layer 900 and the second structuring layer 910 can be made of the same material. Alternatively, the first structuring layer 900 and the second structuring layer 910 can be made of different materials.

[0210] Since, according to one embodiment of the disclosure, the first structuring layer 900 is arranged in the transmission region TA, the first cathode electrode 790 and the second cathode electrode 920 may not be located on the first structuring layer 900 in the transmission region TA. In other words, the first structuring layer 900 can serve to prevent the formation of the first cathode electrode 790 and the second cathode electrode 920 in the transmission region TA. Therefore, the transmission of light to the transmission region TA of the optical region OA can be facilitated.

[0211] The first cathode electrode 790 and the second cathode electrode 920 may not be arranged on the first structuring layer 900 of the transmission area TA, but the first cover layer 7100 may be. A second cover layer 7110 may be arranged on the first cover layer 7100. An encapsulation layer 500 may be arranged on the second cover layer 7110.

[0212] The first anode electrode 710, the second anode electrode 720, the first light-emitting layer 750, the second light-emitting layer 760, the first cathode electrode 790, and the second cathode electrode 920 may not be located in the transmission region TA of the optical region OA. However, the first light-emitting layer 750 and the second light-emitting layer 760 may be located in the transmission region TA.

[0213] However, as described above, the first structuring layer 900 can be arranged on the electron transport layer 770, but it can also be arranged on the electron injection layer 780. A schematic cross-sectional view showing a case in which the first structuring layer 900 is arranged on the electron injection layer 780 is provided with reference to Fig. 10 described.

[0214] Fig. Figure 10 is a schematic cross-sectional view for each area of ​​a display panel 110 when a first structuring layer 900 according to embodiments of the disclosure is arranged on an electron injection layer 780 in a transmission area TA.

[0215] The structures of the first emission region EA1 of the normal region NA and the second emission region EA2 of the optical region OA can be the same as those of the first emission region EA1 and the second emission region EA2, which are in Fig. 9 are shown.

[0216] A planarization layer 700 can be arranged in the transmission region TA of the optical region OA. A hole injection layer 730 can be arranged on the planarization layer 700. A hole transport layer 740 can be arranged on the hole injection layer 730. An electron transport layer 770 can be arranged on the hole transport layer 740.

[0217] In the transmission area TA in the schematic cross-sectional view of the in Fig. In the display panel 110 shown in section 9, the first structuring layer 900 is arranged on the electron transport layer 770, but in the transmission region TA in the schematic cross-sectional view of the Fig. In the display panel 110 shown in Figure 10, the electron injection layer 780 can be arranged on the electron transport layer 770 and the first structuring layer 900 can be arranged on the electron injection layer 780.

[0218] In this case, the electron injection layer 780 can contain a metal material and an alkali metal such as lithium fluoride (LiF).

[0219] With reference to Fig. 10. A first cover layer 7100 can be arranged on the first structuring layer 900. A second cover layer 7110 can be arranged on the first cover layer 7100. The encapsulation layer 500 can be arranged on the second cover layer 7110.

[0220] In the Fig. The structure of the transmission range TA shown in 10 is similar to that in the Fig. In the structure of the transmission region TA shown in Figure 9, the first structuring layer 900 is positioned, but the first cathode electrode 790 and the second cathode electrode 920 may not be located on the first structuring layer 900 of the transmission region TA. In other words, the first structuring layer 900 can serve to prevent the formation of the first cathode electrode 790 and the second cathode electrode 920 in the transmission region TA. Therefore, the transmission of light to the transmission region TA of the optical region OA can be facilitated.

[0221] Fig. Figure 11 is a view showing a normal area NA and an optical area OA of a display panel 110 according to embodiments of the disclosure.

[0222] In the Fig. In the cross-sectional view shown in Figure 11, the representation from substrate 400 to the planarization layer 700 is omitted, and the omitted configuration can be the same as that shown in Figure 11. Fig. The configuration shown in section 8 extends from substrate 400 to the planarization layer 700. Furthermore, the arrangement corresponds to that shown in the cross-sectional view in Fig. 11 components of the arrangement shown in Fig. 9 components shown.

[0223] The arrangement of the normal area NA of the scoreboard 110 is based on reference to Fig. 11 described.

[0224] A planarization layer 700 can be arranged on the substrate 400 of the normal region NA. A first anode electrode 710 can be arranged on the planarization layer 700. The first anode electrode 710 can be arranged such that it overlaps the first emission region EA1.

[0225] A hole injection layer 730 can be arranged on the first anode electrode 710. A hole transport layer 740 can be arranged on the hole injection layer 730. A bank 8140 can be arranged on the hole transport layer 740. The bank 8140 can be arranged such that it has an opening in a region corresponding to the first emission region EA1.

[0226] The first light-emitting layer 750 can be arranged on the bed 8140 such that it corresponds to the first emission region EA1. The first light-emitting layer 750 can contact the hole transport layer 740 at the opening formed in the first emission region EA1 of the bed 8140. An electron transport layer 770 can be arranged on the first light-emitting layer 750. An electron injection layer 780 can be arranged on the electron transport layer 770. A first cathode electrode 790 can be arranged on the electron injection layer 780.

[0227] The light-emitting element ED can be formed by the first anode electrode 710, the hole injection layer 730, the hole transport layer 740, the first light-emitting layer 750, the electron transport layer 770, the electron injection layer 780 and the first cathode electrode 790 of the first emission region EA1.

[0228] A second structuring layer 910 can be arranged on the first cathode electrode 790. Therefore, the probability of metal desorption on the surface of the second structuring layer 910 during metal deposition on the second structuring layer 910 increases considerably, and metal nucleation does not occur.

[0229] A first cover layer 7100 can be arranged on the second structuring layer 910. A second cover layer 7110 can be arranged on the first cover layer 7100. The first cover layer 7100 and the second cover layer 7110 can be formed together during a deposition process for organic material, and their material can be organic or inorganic.

[0230] An encapsulation layer 500 can be arranged on the second cover layer 7110. The encapsulation layer 500 can have a single-layer or a multi-layer structure. For example, the one in Fig. 11 encapsulation layer 500 shown, the first encapsulation layer 8150, the second encapsulation layer 8160 and the third encapsulation layer 8170, which in Fig. 8 are shown.

[0231] Next, with reference to Fig. 11 a cross-section of the second emission range EA2 of the optical range OA is described.

[0232] With reference to Fig. 11. A planarization layer 700 can be arranged on the substrate 400 of the second emission region EA2 in the optical region OA. A second anode electrode 720 can be arranged on the planarization layer 700. The second anode electrode 720 can be arranged such that it overlaps the second emission region EA2.

[0233] A hole injection layer 730 can be arranged on the second anode electrode 720. A hole transport layer 740 can be arranged on the hole injection layer 730. A bank 8140 can be arranged on the hole transport layer 740. The bank 8140 can be arranged such that it has an opening in a region corresponding to the second emission region EA2.

[0234] The second light-emitting layer 760 can be arranged on the bed 8140 such that it corresponds to the second emission region EA2. The second light-emitting layer 760 can contact the hole transport layer 740 at the opening formed in the second emission region EA2 of the bed 8140. An electron transport layer 770 can be arranged on the second light-emitting layer 760. An electron injection layer 780 can be arranged on the electron transport layer 770. A first cathode electrode 790 can be arranged on the electron injection layer 780.

[0235] The second cathode electrode 920 can be arranged on the first cathode electrode 790. A first cover layer 7100 can be arranged on the second cathode electrode 920. A second cover layer 7110 can be arranged on the first cover layer 7100. An encapsulation layer 500 can be arranged on the second cover layer 7110, and the configuration of the encapsulation layer 500 can be the same as the configuration of the encapsulation layer 500 of the normal range NA.

[0236] Next, a cross-section of the transmission range TA of the optical range OA will be shown with reference to Fig. 11 described.

[0237] With reference to Fig. 11. A planarization layer 700 can be arranged on the substrate 400 of the transmission region TA of the optical region OA. A hole injection layer 730 can be arranged on the planarization layer 700. A hole transport layer 740 can be arranged on the hole injection layer 730. An electron transport layer 770 can be arranged on the hole transport layer 740.

[0238] The first structuring layer 900 can be arranged on the electron transport layer 770. A first cover layer 7100 can be arranged on the first structuring layer 900. A second cover layer 7110 can be arranged on the first cover layer 7100. An encapsulation layer 500 can be arranged on the second cover layer 7110, and the configuration of the encapsulation layer 500 can be the same as the configuration of the encapsulation layer 500 of the normal area NA.

[0239] Although Fig. Figure 11 shows that the first structuring layer 900 is arranged on the electron transport layer 770, the electron injection layer 780 can be arranged on the electron transport layer 770 in the transmission region TA and the first structuring layer 900 can be arranged on the electron injection layer 780.

[0240] With reference to Fig. 11. The first structuring layer 900, when arranged on the electron transport layer 770, can be located adjacent to the side surfaces of the electron injection layer 780, the first cathode electrode 790, and the second cathode electrode 920. In this case, the thickness of the first structuring layer 900 can be equal to the sum of the thickness of the electron injection layer 780, the thickness of the first cathode electrode 790, and the thickness of the second cathode electrode 920.

[0241] [With reference to Fig. 11. The second structuring layer 910, located in the normal region NA, can be arranged adjacent to a side face of the second cathode electrode 920, which is located in the optical region OA. The second structuring layer 910 can have the same thickness as the second cathode electrode 920.

[0242] However, the second cathode electrode 920 can be located in the second emission region EA2 of the optical region OA, through the first structuring layer 900, which is located in the transmission region TA of the optical region OA, and the second structuring layer 910, which is located in the normal region NA. In other words, the second cathode electrode 920 may not be located in the normal region NA and in the transmission region TA of the optical region OA.

[0243] Since the second cathode electrode 920 is located in the second emission region EA2 of the optical region OA, the luminous efficiency of light emitted from the second light-emitting layer 760 of the second emission region EA2 can be improved. In particular, a microcavity effect can be induced due to the difference in refractive index between the layers when the light emitted from the second light-emitting layer 760 passes through the second cathode electrode 920, the first cover layer 7100, and the second cover layer 7110.

[0244] Therefore, it is possible to reduce the luminance deviation between the optical area OA and the normal area NA, which occurs because the density of the subpixels SP in the optical area OA is smaller than the density of the subpixels SP in the normal area NA.

[0245] However, the first structuring layer 900 and the second structuring layer 910 can be arranged such that they have different thicknesses. For example, the thickness of the first structuring layer 900 can be greater than the thickness of the second structuring layer 910. Alternatively, the thickness of the first structuring layer 900 can be less than that of the second structuring layer 910.

[0246] Fig. Figure 12 is a view showing a normal area NA and an optical area OA of a display panel 110 according to embodiments of the disclosure.

[0247] The cross-sectional view of the display board 110 according to Fig. The structure shown in Figure 12 can have the same configuration and arrangement as that shown in Figure 910, with the exception of the thickness of the second structuring layer. Fig. Figure 11 shows a cross-sectional view of the display panel 110. Accordingly, the description of the other components, with the exception of the second structuring layer 910, is omitted.

[0248] With reference to Fig. 12. The thickness of the second structuring layer 910, which is located in the normal region NA, can be greater than the thickness of the second cathode electrode 920, which is located in the optical region OA. Therefore, the side face of the second structuring layer 910 can be located adjacent to the side face of the second cathode electrode 920 and the first cover layer 7100.

[0249] However, the first structuring layer 900 can also have different thicknesses.

[0250] Fig. Figure 13 is a view showing a normal area NA and an optical area OA of a display panel 110 according to embodiments of the disclosure.

[0251] The cross-sectional view of the display board 110 according to Fig. The structure shown in Figure 13 can have the same configuration and arrangement as that shown in Figure 13, with the exception of the thickness of the first structuring layer (900). Fig. Figure 12 shows a cross-sectional view of the display panel 110. Accordingly, the description of the other components, with the exception of the first structuring layer 900, is omitted.

[0252] With reference to Fig. 13 The thickness of the first structuring layer 900, which is located in the transmission region TA of the optical region OA, can be smaller than the sum of the thicknesses of the electron injection layer 780 and the first cathode electrode 790, which are located in the second emission region EA2.

[0253] Furthermore, the thickness of the first structuring layer 900 can be smaller than that of the second structuring layer 910.

[0254] Fig. Figure 14 is a view showing a normal area NA and an optical area OA of a display panel 110 according to embodiments of the disclosure.

[0255] The cross-sectional view of the display board 110 according to Fig. The structure shown in Figure 14 can have the same configuration and arrangement as that shown in Figure 14, with the exception of the thickness of the first structuring layer (900). Fig. Figure 12 shows a cross-sectional view of the display panel 110. Accordingly, the description of the other components, with the exception of the first structuring layer 900, is omitted.

[0256] With reference to Fig. 14 The thickness of the first structuring layer 900, which is located in the transmission region TA of the optical region OA, can be greater than the sum of the thicknesses of the electron injection layer 780, the first cathode electrode 790 and the second cathode electrode 920, which are located in the second emission region EA2.

[0257] Therefore, the side surface of the first structuring layer 900 can be adjacent to the electron injection layer 780, the first cathode electrode 790, the second cathode electrode 920 and the first cover layer 7100, which are arranged in the optical area OA.

[0258] The thickness of the first structuring layer 900 and the thickness of the second structuring layer 910 can be varied according to the material from which the first structuring layer 900 and the second structuring layer 910 are made, in addition to the information provided in Fig. 11, Fig. 12, Fig. 13 and Fig. The 14 described variations may occur.

[0259] However, the second cathode electrode 920, which is located in the second emission region EA2 of the optical region OA, can have different thicknesses.

[0260] Fig. 15 is a subpixel SP specific luminance efficiency table for each thickness of a second cathode electrode 920 according to embodiments of the disclosure.

[0261] With reference to Fig. 15. Tref can be the thickness of the first cathode electrode 790. T1, T2, T3, and T4 can be the thicknesses of the second cathode electrode 920. Specifically, T1 can be a thickness of 1 nm for the second cathode electrode 920. T2 can be a thickness of 2 nm for the second cathode electrode 920. T3 can be a thickness of 3 nm for the second cathode electrode 920. T4 can be a thickness of 4 nm for the second cathode electrode 920.

[0262] As it is in Fig. As shown in Figure 7, Tref corresponds to the case in which the second cathode electrode 920 is not located in the second emission region EA2, but only the first cathode electrode 790 is located, and in this case it can be assumed that the light emitted from the second emission region EA2 has a luminous efficiency of 100% for each of the white (W), red (R), green (G) and blue (B) subpixels SP.

[0263] As it is in Fig. As shown in Figure 9, if the second cathode electrode 920 is positioned on the first cathode electrode 790 of the second emission region EA2, a case in which the second cathode electrode measures 1 nm can correspond to Tref+T1. In this case, the luminous efficacy of the W subpixel SP can be 103%. The luminous efficacy of the R subpixel SP can be 104%. The luminous efficacy of the G subpixel SP can be 104%. The luminous efficacy of the B subpixel SP can be 104%.

[0264] If the second cathode electrode 920, which is located on the first cathode electrode 790 of the second emission region EA2, has a diameter of 2 nm, this can correspond to Tref+T2. In this case, the luminous efficiency of the W subpixel SP can be 106%. The luminous efficiency of the R subpixel SP can be 107%. The luminous efficiency of the G subpixel SP can be 107%. The luminous efficiency of the B subpixel SP can be 107%.

[0265] If the second cathode electrode 920, which is located on the first cathode electrode 790 of the second emission region EA2, has a diameter of 3 nm, this can correspond to Tref+T3. In this case, the luminous efficiency of the W subpixel SP can be 108%. The luminous efficiency of the R subpixel SP can be 110%. The luminous efficiency of the G subpixel SP can be 109%. The luminous efficiency of the B subpixel SP can be 107%.

[0266] If the second cathode electrode 920, which is located on top of the first cathode electrode 790 of the second emission region EA2, has a wavelength of 4 nm, this can correspond to Tref+T4. In this case, the luminous efficiency of the W subpixel SP can be 110%. The luminous efficiency of the R subpixel SP can be 110%. The luminous efficiency of the G subpixel SP can be 111%. The luminous efficiency of the B subpixel SP can be 110%.

[0267] As described above, it is possible to improve the luminous efficiency if the second cathode electrode 920 is positioned on top of the first cathode electrode 790 of the second emission region EA2, although the extent of the improvement depends on the thickness. The in Fig. The thickness of the second cathode electrode 920 described in section 15 is merely an example for description purposes, and the thickness of the second cathode electrode 920 is not limited to such examples.

[0268] Fig. Figure 16 is a table showing the degree of shrinkage and luminance deterioration over time when a light-emitting element ED according to embodiments of the disclosure is irradiated with an electromagnetic wave in a UV band.

[0269] With reference to Fig. Figure 16, Cathode Ref. in nm, indicates the degree of shrinkage and luminance degradation of the light-emitting element ED due to the action of electromagnetic waves in the UV band when the second cathode electrode 920 is not located in the second emission region EA2 of the optical region OA. As shown in the table of Fig. As shown in Figure 16, the size of the light-emitting element ED can decrease, and the luminance can deteriorate, when exposed to electromagnetic waves in the UV band for 500 hours. Specifically, the luminance can decrease by more than 5%. If the length of the light-emitting element ED before exposure to electromagnetic waves in the UV range is x, and the length of the light-emitting element ED after exposure is y, then y can be smaller. Due to the shrinkage of the light-emitting element ED, a defect rate of approximately 40% can occur.

[0270] The deterioration of luminance and the reduction in the size of the light-emitting element ED can be caused by electromagnetic waves in the UV band that are transmitted through the optical area OA.

[0271] With reference to Fig. Figure 16, Cathode Ref. +2 nm, indicates the degree of shrinkage and deterioration of the luminance of the light-emitting element ED due to the action of electromagnetic waves in the UV band when a 2 nm thick second cathode electrode 920 is arranged on top of the first cathode electrode 790 of the second emission region EA2. As shown in the table of Fig. As shown in Figure 16, the degree of shrinkage and luminance degradation of the light-emitting element ED, when exposed to electromagnetic waves in the UV band for 500 hours, can be negligible compared to the case where the second cathode electrode 920 is not present. Since the second cathode electrode 920 is present, there may be hardly any luminance degradation or shrinkage of the light-emitting element ED in the optical region OA.

[0272] As described above, it is possible to shield electromagnetic waves in the UV band emitted from outside the display panel 110 by arranging the second cathode electrode 920 in the optical area OA. Accordingly, it is possible to prevent the deterioration of the luminance and the reduction in the size of the light-emitting element ED compared to the case where the second cathode electrode 920 is not located in the optical area OA.

[0273] Embodiments of the disclosure described above are briefly described below.

[0274] A display device may comprise: a substrate having a first region with several first emission regions and a second region with several second emission regions and several transmission regions; several first anode electrodes, each arranged in the several first emission regions and positioned on the substrate; several second anode electrodes, each arranged in several second emission regions and positioned on the substrate; several first light-emitting layers arranged on the several first anode electrodes; several second light-emitting layers arranged on the several second anode electrodes; a first cathode electrode arranged on the several first light-emitting layers and the several second light-emitting layers; a second cathode electrode.a first structuring layer arranged in the multiple second emission regions and positioned on the first cathode electrode, a first structuring layer arranged in the multiple transmission regions and positioned on a side surface of the first cathode electrode, and a second structuring layer arranged in the multiple first emission regions, positioned on the first cathode electrode and positioned on a side surface of the second cathode electrode.

[0275] The display device may further comprise an electron transport layer arranged in the first region and the second region and positioned on several first light-emitting layers and several second light-emitting layers, and an electron injection layer arranged in the several first emission regions and the several second emission regions and positioned between the electron transport layer and the first cathode electrode.

[0276] In the display device, the electron injection layer can be positioned on a side surface of the first structuring layer.

[0277] A display device may comprise: a substrate having a display area in which several first emission regions are arranged, several first anode electrodes each arranged in the several first emission regions and positioned on the substrate, several first light-emitting layers arranged on several first anode electrodes, a first cathode electrode arranged on the several first light-emitting layers, a structuring layer positioned on the first cathode electrode, and a second cathode electrode arranged on a side surface of the structuring layer.

[0278] The above description was presented to enable those skilled in the art to realize and utilize the technical idea of ​​the disclosure and was given in connection with a specific application and its requirements. Various modifications, additions, and substitutions of the described embodiments are readily apparent to those skilled in the art, and the general principles defined here can be applied to other embodiments and applications without departing from the scope of the disclosure. The foregoing description and the accompanying drawings serve only to illustrate the technical idea of ​​the disclosure. That is to say, the disclosed embodiments are intended to illustrate the scope of the technical idea of ​​the disclosure. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] KR 10-2024-0120498

[0001]

Claims

[1] Display device comprising: a substrate (400) with a first area (NA) comprising several first emission areas (EA1) and a second area (OA) comprising several second emission areas (EA2) and several transmission areas (TA); several first anode electrodes (710), each arranged in the several first emission regions (EA1) and positioned on the substrate (400); several second anode electrodes (720), each arranged in the several second emission regions (EA2) and positioned on the substrate (400); several first light-emitting layers (750) arranged on the several first anode electrodes (710); several second light-emitting layers (760) arranged on the several second anode electrodes (720); a first cathode electrode (790) arranged on the several first light-emitting layers (750) and on the several second light-emitting layers (760); a second cathode electrode (920) arranged in the several second emission regions (EA2) and positioned on the first cathode electrode (790); a first structuring layer (900) arranged in the multiple transmission regions (TA) and adjacent in a horizontal direction to a side surface of the first cathode electrode (790); and a second structuring layer (910), which is arranged in the several first emission regions (EA1), is positioned on the first cathode electrode (790) and is adjacent in a horizontal direction to a side surface of the second cathode electrode (920). [2] Display device according to claim 1, wherein the first cathode electrode (790) and the second cathode electrode (920) have different refractive indices. [3] Display device according to claim 1 or 2, wherein the first structuring layer (900) and the second structuring layer (900) each contain a material that inhibits metal nucleation. [4] Display device according to claim 1, 2 or 3, wherein at least one section of the second cathode electrode (920) does not overlap the first structuring layer (900) in the vertical direction. [5] Display device according to any of the preceding claims, further comprising: an electron transport layer (770) arranged on the several first light-emitting layers (750) and on the several second light-emitting layers (760); and an electron injection layer (780) arranged between the electron transport layer (770) and the first cathode electrode (750), wherein the electron transport layer (770) is preferably arranged in the multiple transmission regions (TA) and / or the first structuring layer (900) is arranged on the electron transport layer (780) and / or the electron injection layer (780) is adjacent in a horizontal direction to a side surface of the first structuring layer (900). [6] Display device according to claim 5, wherein the electron transport layer (770) and the electron injection layer (780) are arranged in the multiple transmission regions (TA) and wherein the electron injection layer (780) is arranged in the multiple transmission regions (TA) between the electron transport layer (770) and the first structuring layer (900). [7] Display device according to one of the preceding claims, wherein the thickness of the first structuring layer (900) is greater than or equal to the thickness of the second structuring layer (910) or the thickness of the first structuring layer (900) is less than the thickness of the second structuring layer (910) and / or the thickness of the first structuring layer (900) is greater than the thickness of the electron injection layer (780). [8] Display device according to any one of claims 5 to 7, wherein the electron injection layer (780) contains an alkali metal. [9] Display device according to any one of the preceding claims 5-8, wherein the thickness of the first structuring layer (900) is less than the sum of the thickness of the electron injection layer (780), the thickness of the first cathode electrode (790) and the thickness of the second cathode electrode (920); or the thickness of the first structuring layer (900) is greater than or equal to the sum of the thickness of the electron injection layer (780), the thickness of the first cathode electrode (790) and the thickness of the second cathode electrode (920). [10] Display device according to one of the preceding claims, wherein the thickness of the second structuring layer (910) is greater than or equal to the thickness of the second cathode electrode (920). [11] Display device according to any of the preceding claims, further comprising: a first cover layer (7100) arranged on the first structuring layer (900), the second cathode electrode (920) and the second structuring layer (910); a second cover layer (7110) arranged on top of the first cover layer (7100); and an encapsulation layer (500) arranged on the second cover layer (7110). [12] Display device according to claim 11, wherein a refractive index of the first cover layer (7100) is higher than a refractive index of the second cover layer (7110) and a refractive index of the second cathode electrode (920). [13] Display device according to one of the preceding claims, wherein the second cathode electrode (920) shields electromagnetic waves in an ultraviolet wavelength band. [14] Display device according to any of the preceding claims, further comprising: an optical electronic device (11, 12) arranged on a rear surface of the second area (OA), wherein the optical electronic device (11, 12) performs a predefined operation using light that is transmitted through the multiple transmission areas (TA). [15] Display device comprising: a substrate (400); several anode electrodes (710, 720) positioned on the substrate (400); several first light-emitting layers (750) and several second light-emitting layers (760), each arranged on the several anode electrodes (710, 720); a first cathode electrode (790) arranged on the several first light-emitting layers (750) and the several second light-emitting layers (760); a structuring layer (910) arranged on the first cathode electrode (790) and overlapping the several first light-emitting layers (750) in a vertical direction; and a second cathode electrode (920) arranged on top of the first cathode electrode (790) and overlapping several second light-emitting layers (760) in a vertical direction; wherein the second cathode electrode (920) is adjacent in a horizontal direction to a side surface of the structuring layer (910).

Images