Semiconductor device and method for manufacturing a semiconductor device

DE102025134693A1Undetermined Publication Date: 2026-07-23MITSUBISHI ELECTRIC CORP
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-08-29
Publication Date
2026-07-23

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Abstract

A semiconductor device comprises: an insulating substrate having an insulating layer with a first main surface and a second main surface located on the opposite side from the first main surface, a first metal layer bonded to the first main surface, and a second metal layer bonded to the second main surface;and a chip bonded to a second surface of the second metal layer located on the opposite side from a first surface of the second metal layer bonded to the insulating layer, wherein the first metal layer has a region in which the size of a grain boundary on a second surface of the first metal layer, located on the opposite side from a first surface of the first metal layer bonded to the insulating layer, is smaller than the size of a grain boundary on the second surface of the second metal layer.
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Citation Information

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