POWER SEMUBLER DEVICE

Abstract

According to one embodiment, a power semiconductor device is provided comprising a first electrode, a semiconductor layer on the first electrode, a second electrode on the semiconductor layer, and multiple gate electrodes on the semiconductor layer, wherein the semiconductor layer comprises a first semiconductor layer of a first conductivity type on the first electrode and a second semiconductor layer of a second conductivity type between the first semiconductor layer and the second electrode, the second electrode comprises a 2-1 electrode extending in a first direction and multiple 2-2 electrodes spaced apart in the first direction, the second semiconductor layer or the first semiconductor layer comprises a trench region, the trench region is arranged between the multiple 2-2 electrodes, and the gate electrodes are arranged in the trench region.