Integrated circuit structures with dummy links for uniform grid-metal gate and trench contact cut

Abstract

Integrated circuit structures with dummy links for a uniform lattice-metal gate and trench contact cut are described. A structure comprises a vertical stack of horizontal nanowires or a fin. A gate electrode is located above the vertical stack of horizontal nanowires of the fin. A first conductive trench contact is located adjacent to a first side of the gate electrode. A second conductive trench contact is located adjacent to a second side of the gate electrode. A dielectrically cut plug structure extends through the gate electrode and through the first and second conductive trench contacts, the dielectrically cut plug structure having a recess that is laterally adjacent to the first and second sections of the first conductive trench contact.A conductive connection is located in the recess of the dielectric cut plug structure, with the conductive connection linking the first and second sections of the first conductive trench contact. A conductive structure is located in a recess of the second conductive trench contact.

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