Silicon carbide semiconductor device and power conversion device

Abstract

One objective is to provide a technique suitable for suppressing bipolar priority operation at a boundary region. A silicon carbide semiconductor device comprises: a semiconductor layer consisting of silicon carbide, with an active region, an outer surrounding region, and a boundary region defined; and a source electrode provided on a top side of the semiconductor layer. The semiconductor layer has a drift layer of a first conductivity type and a well layer of a second conductivity type. The drift layer in the boundary region has a high point defect density layer that overlaps at least a portion of the well layer in a top view and is positioned below the well layer such that it is spaced away from the well layer in a cross-sectional view.

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