Semiconductor component and display panel

Abstract

The present application provides a semiconductor device and a display panel, wherein the semiconductor material of the active layer of the semiconductor device is doped with tantalum and at least one of the elements terbium and praseodymium, the semiconductor material comprising a metal oxide semiconductor material. By doping a specific proportion of tantalum into the semiconductor material, wherein the tantalum is n-type doped, has a low effective electron mass, and exhibits a 5s spherical electron orbital, the degree of electron cloud overlap can be increased, thus enhancing the mobility.By doping a specific proportion of at least one of the elements terbium and praseodymium into the semiconductor material, acceptor-type trap states are created at the conduction band floor, thereby trapping photoelectrons, so that recombination centers for photogenerated charge carriers can be effectively formed, and the light stability is improved.

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