Semiconductor device structure and method for its manufacture

Abstract

Embodiments of the present disclosure provide semiconductor device structures and methods for their fabrication. The structure comprises a source / drain region containing a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, wherein the first semiconductor layer contains an undoped binary semiconductor material, and the second and third semiconductor layers contain a single doped semiconductor material. The doping concentration of the second semiconductor layer differs from the doping concentration of the third semiconductor layer, and the thickness of the source / drain region differs from its width in a cross-sectional view.The structure further includes: an intermediate layer located below the source / drain region; a fourth semiconductor layer connected to a side face of the first semiconductor layer; a contact etch stop layer located above the source / drain region; and an intermediate dielectric layer (ILD layer) located above the contact etch stop layer.

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