METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
DE102026103586A1Undetermined Publication Date: 2026-08-06RENESAS ELECTRONICS CORP
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- RENESAS ELECTRONICS CORP
- Filing Date
- 2026-01-28
- Publication Date
- 2026-08-06
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Abstract
A method for fabricating a semiconductor device comprises forming a trench on the upper surface of a first semiconductor layer, introducing a first impurity of a first conductivity type into the first semiconductor layer in an element formation region, forming a first impurity region by diffusing the first impurity through heat treatment, forming a second semiconductor layer on the first semiconductor layer by epitaxial growth, introducing a second impurity of the first conductivity type into the second semiconductor layer, forming a second impurity region to be connected to the first impurity region by diffusing the second impurity through heat treatment, and forming a semiconductor element on the second semiconductor layer.
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Citation Information
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