SUPPLY OF HIGH VOLTAGE FOR LOCAL SELECTION GATES IN STORAGE DEVICES

Abstract

An example of a storage device includes a storage array and a processing device operationally coupled to the storage array. The processing device is configured to perform operations including: identifying a section of the storage array; causing a first voltage level to be applied to one or more local bit lines of the identified section of the storage array; causing a second voltage level to be applied to one or more local source lines of the identified section of the storage array; causing a third voltage level to be applied to a plurality of local select gates of the identified section of the storage array; causing the plurality of local select gates to transition to a floating state; and causing a fourth voltage level to be applied to one or more word lines of the identified section of the storage array.