Capacitor cell regions, semiconductor device comprising these, and method for their manufacture

Abstract

A semiconductor device comprises: in a first metallization layer (M_1st layer), M_1st segments having a first center-to-center spacing and essentially a first width with a uniform first gap between them; and capacitor cell regions (capacitor cells) arranged in an array, comprising first capacitor cells and second capacitor cells; each capacitor cell having a first number and substantially uniform physical arrangement of the M_1st segments; the electrical arrangements of the M_1st segments for the second capacitor cells being different from those for the first capacitor cells; and, for each of the capacitor cells, couplings between the M_1st segments and, accordingly, a first voltage or a second voltage being configured such that each of the first capacitor cells essentially provides a first capacitance.and each of the second capacitor cells essentially provides a non-zero second capacitance that is smaller than the first capacitance.