Semiconductor device
DE102026109477A1Undetermined Publication Date: 2026-10-22MITSUBISHI ELECTRIC CORP
Patent Information
- Application Number
- DE102026109477
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-04-17
- Filing Date
- 2026-03-09
- Publication Date
- 2026-10-22
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Abstract
A semiconductor device comprises: an insulating layer selectively arranged on a semiconductor substrate; a terminal electrode layer selectively arranged on the insulating layer and connected to an exposed semiconductor portion, which is part of the semiconductor substrate in a termination region, wherein the exposed semiconductor portion is exposed through the insulating layer; and an organic layer having insulating properties and arranged over an exposed insulating portion, which is part of the insulating layer, wherein the exposed insulating portion is exposed through the terminal electrode layer, wherein the average thickness of the organic layer arranged over the exposed insulating portion is greater than 5 µm and less than 9 µm.
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Citation Information
Patent Citations
Semiconductor device
JP2017092360A