Power converter

Abstract

Power converter (200) comprising: a power semiconductor module (150a) that converts a direct current into an alternating current; a first flow path forming body (2); and a second flow path forming body that forms a receiving space (20a) for receiving the power semiconductor module (150a) and the first flow path forming body (2), wherein the first flow path forming body (2) is formed from a first side wall section (25a) facing the power semiconductor module (150a), a second side wall section (25b) facing the first side wall section (25a) with the power semiconductor module (150a) arranged between them, and a lower surface section (26) spanning a lower surface of the power semiconductor module (150a) and connecting the first side wall section (25a) and the second side wall section (25b),wherein the first side wall section (25a) forms a first flow path space between a surface of the power semiconductor module (150a) and the first side wall section (25a); wherein the second side wall section (25b) forms a second flow path space between the other surface of the power semiconductor module (150a) and the second side wall section (25b); and wherein cooling refrigerant flows through the receiving space (20a), the first flow path space and the second flow path space, wherein the power semiconductor module (150a) comprises a first heat dissipation section (7a) facing the first side wall section (25a), a second heat dissipation section (7b) facing the second side wall section (25b) and facing the first heat dissipation section, and a power semiconductor device arranged between the first heat dissipation section (7a) and the second heat dissipation section (7b),wherein the first heat dissipation section (7a) has a region in which heat dissipation fins are formed and a region in which no heat dissipation fins are formed, wherein the first flow path space is formed in a region facing the region in which heat dissipation fins are formed, characterized in that the first side wall section (25a) has a convex section (25c), wherein the convex section (25c) projects in the direction of the first heat dissipation section (7a) in a region facing the region in which no heat dissipation fins are formed.

Description

Technical field

[0001] The present invention relates to a power converter and in particular to a power converter used in a hybrid electric vehicle or an electric vehicle. background

[0002] For electric and hybrid electric vehicles, miniaturization and cost reduction of the components to be assembled are crucial. A power converter, which converts direct current from a battery into alternating current, is no exception, and its miniaturization and cost reduction are essential. Since the power density is consequently increased, it is therefore necessary to improve the cooling capacity.

[0003] Among the electronic components that make up the power converter, a power semiconductor module exhibits the greatest heat generation. To improve the cooling performance of the power semiconductor module, a double-sided cooling structure (PTL 1) proved effective, in which thermal paste, which has a high thermal resistance, is removed and heat is dissipated from both surfaces of a semiconductor device.

[0004] Since the power semiconductor module and a flow path-forming body are designed separately, the structure described in PTL 1 necessitates providing a gap in addition to a flange section, taking assembly requirements into account (particularly between the discharge fins and a wall surface of a flow path). Even with a tight fit tolerance and a small gap, manufacturing variations in the power semiconductor module itself raise concerns about interference from elements within a sealing section. Especially when multiple power semiconductor modules are used (multiple sealing sections), strictly controlling the fit tolerance is not realistic.If the power semiconductor module and the body forming a flow path are shaped separately, the problem arises that cooling water bypasses the heat dissipation fins and the cooling capacity of the power semiconductor module cannot be fully utilized, since a finite gap is certainly present due to fluctuations and cooling water flows through the gap in addition to a section around a heat dissipation section that is to be flushed with cooling water to cool the power semiconductor module. List of prior art patent document(s)

[0005] PTL 1: JP-A-2010-110143 Summary of the invention: Technical problem

[0006] One object of the invention is to achieve an improvement in the cooling performance of a power semiconductor module and a reduction in fluctuations in performance. Solution to the problem

[0007] To solve the problem described above, a power converter according to the invention comprises a power semiconductor module that converts a direct current into an alternating current, a first flow path-forming body, and a second flow path-forming body that forms a receiving space for receiving the power semiconductor module and the first flow path-forming body, wherein the first flow path-forming body is formed from a first side wall section facing the power semiconductor module, a second side wall section facing the first side wall section, with the power semiconductor module arranged between them, and a lower surface section spanning a lower surface of the power semiconductor module and connecting the first side wall section and the second side wall section.the first side wall section forms a first flow path space between a surface of the power semiconductor module and the first side wall section, the second side wall section forms a second flow path space between the other surface of the power semiconductor module and the second side wall section, and cooling refrigerant flows through the receiving space, the first flow path space, and the second flow path space. Advantageous effects of the invention

[0008] According to the invention, it is possible to achieve an improvement in the cooling performance of a power semiconductor module and a reduction in fluctuations in performance. Brief description of the drawings

[0009] Fig. Figure 1 shows a manufacturing process for forming a heat dissipation fin section and a flange section using two forging processes.

[0010] Fig. Figure 2 shows a manufacturing process in which friction stir welding (FSW) of the heat dissipation fin section is carried out on a metal housing with a flange.

[0011] Fig. Figure 3 is a representation showing a control unit of a hybrid electric vehicle.

[0012] Fig. Figure 4 shows an electrical circuit diagram of the inverter circuits. 140 and 142 .

[0013] Fig. Figure 5 shows a perspective view of a power converter. 200 a first example.

[0014] Fig. Figure 6 shows a perspective exploded view of the power converter. 200 of the first example.

[0015] Fig. Figure 7 shows a perspective exploded view of the power converter. 200 of the first example seen from below.

[0016] Fig. Figure 8(a) shows a perspective view of a power semiconductor module.

[0017] Fig. 8(b) shows a cross-sectional view taken from a cross-section B of Fig. 8(a) is cut.

[0018] Fig. 9(a) shows a cross-sectional view taken from a cross-section A of Fig. 5 is cut.

[0019] Fig. 9(b) shows a partially enlarged view of Fig. 9(a).

[0020] Fig. Figure 10 shows a perspective view of the power converter. 200 a second example.

[0021] Fig. Figure 11 shows a cross-sectional view taken from a cross-section C of Fig. 10 is cut when viewed from below.

[0022] Fig. Figure 12 shows a perspective view of the power converter. 200 a third example.

[0023] Fig. Figure 13 is a perspective view showing an arrangement of a flow path-forming body of a fourth example.

[0024] Fig. Figure 14 shows a view from a side surface after assembly of the components in Fig. 13. Description of the embodiments

[0025] Fig. Figure 1 illustrates a manufacturing process in which a metal housing with a lamella is produced by forging and shaping. Fig. 1(a) and Fig. 1(b) show a first step and Fig. 1(c) and Fig. Figure 1(d) shows a second step. The first step is to deform a raw material into the approximate shape of a heat dissipation base. A metal such as aluminum or copper, which can be easily deformed, or metal powder, is effective as the raw material. The second step is to form fins on both sides of a pattern created in the first step. A mold for forming the fins is provided. In this case, to facilitate the forming of the fins, the mold must have a width of finite length at the section indicated by X. The length is denoted as X in the view and is approximately 5 mm to 10 mm.

[0026] Fig. Figure 2 illustrates a manufacturing process for a metal housing with a lamella by combining forging and friction stir welding. Fig. 2(a) and Fig. 2(b) show a first step and equal Fig. 1. In a Fig. 2(c) and Fig. In the second step shown in Figure 2(d), a technique is used to weld a lamellar section that is formed separately from the specimen formed in the first step. For example, when using the friction stir welding technique as shown in the view, it is necessary to use a rotary tool to ensure a weld area. The diameter of the rotary tool is shown in the view Y, and a minimum diameter of 10 mm is required for the rotary tool.

[0027] For the above reason, even when using a manufacturing process with two forging processes or friction stir welding, it is unavoidable that a gap of approximately 5 mm to 10 mm will form between a flange section and a heat dissipation fin section. Even if a metal housing forming process is carried out by cutting, neglecting mass production, this has no effect on whether the gap of approximately 5 mm to 10 mm between the flange section and the heat dissipation fin section is formed, since a gap is also required for the tool to enter.Thus, in a structure where a power semiconductor module, which has a heat dissipation fin section and a sealing section that are separate from each other, is inserted into an opening section of a body forming a flow path, a gap is formed between a flange section and a heat dissipation fin section of the power semiconductor module.

[0028] The invention was made to solve a problem of this kind, in addition to fulfilling the task described in "Technical Problem". Embodiments of the invention are described below with reference to the drawings. First example

[0029] Fig. Figure 3 is a diagram showing a control unit of a hybrid electric vehicle (hereinafter referred to as "HEV"). A power machine EGN, a motor-generator MG1, and a motor-generator MG2 generate the vehicle's drive torque. In addition to generating torque, motor-generator MG1 and motor-generator MG2 also convert externally applied mechanical energy into electrical power.

[0030] For example, motor-generators MG1 and MG2 are synchronous or induction motors and operate as motors or generators, depending on the operating mode, as described above. When motor-generators MG1 and MG2 are mounted on the vehicle, it is desirable to achieve high output power despite their small size, and a permanent magnet synchronous motor with a magnet such as neodymium is suitable for motor-generators MG1 and MG2. Furthermore, the permanent magnet synchronous motor generates less heat in its rotor compared to an induction motor, making it an excellent choice for the vehicle in this respect as well.

[0031] Output torques from the output side of the power machine ENG and the motor-generator MG2 are transferred to the motor-generator MG1 via a power distribution mechanism TSM. Torque from the power distribution mechanism TSM, or torque generated by the motor-generator MG1, is transmitted to the vehicle wheels via a transmission TM and a differential DIF. Conversely, during regenerative braking, torque from the vehicle wheels is transferred to the motor-generator MG1, generating AC power based on the applied torque.

[0032] As described below, the generated alternating current power is processed by a power converter. 200 converted into direct current power and charges a high-voltage battery 136 and the stored energy is used again as driving energy. Furthermore, when the high-voltage battery is depleted... 136Since the stored power is low, the rotational energy generated by the power machine ENG is converted into alternating current power by the motor generator MG2, and the alternating current power is then used by the power converter. 200 converted into direct current power and the battery 136 It can be charged. The transfer of mechanical energy from the power machine ENG to the motor generator MG2 is carried out by the power distribution mechanism TSM.

[0033] Next, the power converter 200 described. A boost circuit 600 is via a DC connection element 138 with the battery 136 electrically connected. A voltage of the battery 136 is from the increase circuit 600 increased. A circuit 201 The increase includes inverter circuits 140 and 142 Furthermore, the power converter includes 200a capacitor module 500 to smooth the signal to the inverter circuit 140 supplied direct current.

[0034] When the motor generator MG1 is operated as a motor, the inverter circuit generates 140 based on the battery 136 through the DC connection element 138 supplied direct current to alternating current and delivers alternating current through an alternating current connection element. 188 to the motor generator MG1. An arrangement consisting of the motor generator MG1 and the inverter circuit 140 The unit formed is operated as a first electrical power generation unit.

[0035] Similarly, the inverter circuit generates 142 then, when the motor generator MG2 is operated as a motor, alternating current based on the battery 136 through the DC connection element 138supplied direct current and delivers alternating current power through the alternating current connection element 198 to the motor generator MG2. An arrangement consisting of the motor generator MG2 and the inverter circuit 142 The unit formed is operated as a second electrical power generation unit.

[0036] The first electrical power generation unit and the second electrical power generation unit can both be operated as a motor or as a generator, or they can be operated separately depending on the driving condition. Furthermore, one of the two units can be disabled when the vehicle is stopped. In addition, in this embodiment, the first electrical power generation unit can be powered by the battery. 136It can be operated as a power generation unit, meaning the vehicle can only be driven by the power of the motor generator MG1. Furthermore, in this embodiment, it is possible to operate the battery 136 by means of the first electrical power generation unit or the second electrical power generation unit as an electrical power generation unit, the power through the power of a power machine 120 or power generated from the vehicle wheels, to charge.

[0037] Although not in Fig. 3 shown, the battery 136 It is also used as a power supply to drive a motor for an auxiliary machine. For example, the auxiliary machine's motor might drive an air conditioner compressor or a hydraulic pump for the control system. Direct current is drawn from the battery. 136The AC power is supplied to a power semiconductor module for the auxiliary machine. This power semiconductor module generates AC power, which is then supplied to the motor for the auxiliary machine. The power semiconductor module for the auxiliary machine has a circuit arrangement and function that are essentially similar to those of the inverter circuit. 140 are, and controls a phase or frequency of the alternating current and power supplied to the motor for the auxiliary machine.

[0038] The power converter 200 includes a communication link element 21 A control circuit is used to receive a command from a higher-level control device or to transmit data indicating a state to the higher-level control device. 172calculates a control amount for the motor generator MG1, the motor generator MG2, or the auxiliary motor, based on a command from the connecting element. 21 whether they are operated as a motor or as a generator. Then the control circuit generates 172 Based on the calculation result, a control pulse is generated and the control pulse is delivered to a control circuit. 174 and a control circuit for the auxiliary machine module. The control circuit 174 generates a control pulse to control the inverter circuits 140 and 142 based on the supplied control impulse.

[0039] Fig. Figure 4 is an electrical circuit diagram of the inverter circuits. 140 and 142 in the circuit 201 after the increase. Furthermore, the two inverter circuits 140 and 142They are extremely similar in their circuit arrangement and operation, and there is only one control method for operating one motor-generator MG1 as either a motor or a generator. Therefore, the inverter circuit is mainly described below. 140 described below. Furthermore, a bipolar transistor with an insulated gate is used as a semiconductor device, and the bipolar transistor with an insulated gate is abbreviated as IGBT.

[0040] An upper and lower branch series circuit 150 is from a higher branch IGBT 328 , a diode 156 , a sub-branch IGBT 330 and a diode 166 formed. The inverter circuit 140 includes the upper and lower branch series circuits 150 , which correspond to the three phases, namely a U-phase, a V-phase and a W-phase of the alternating current, that are to be output.

[0041] In this embodiment, each of the three phases corresponds to the respective phase wiring of the three phases of the rotor wiring of the motor-generator MG1. The upper and lower branch series circuits 150 Each of the three phases outputs the alternating current from an intermediate electrode. 169 from which is an intermediate point segment of a series circuit. The intermediate electrode 169 is equipped with an AC busbar 802 connected, which is an alternating current line through an alternating current connecting element 159 to the motor generator MG1.

[0042] A collector electrode 153 of the upper branch IGBT 328 is equipped with a capacitor connection 506 a positive electrode side of the capacitor module 500 through a positive electrode connection 157 electrically connected. Additionally, an emitter electrode of the sub-branch IGBT is connected. 330 with a capacitor connection 504a negative electrode side of the capacitor module 500 through a negative electrode connection 158 electrically connected.

[0043] As described above, the control circuit receives 172 the control command from the higher-level control device through the connecting element 21 Based on this, the control pulse, which is the control signal for controlling the IGBT, is generated. 328 or the IGBT 330 , which is the upper branch or the lower branch of the upper and lower branch series circuit 150 for each phase that forms the inverter circuit 140 forms, generates and connects to the control circuit 174 delivered.

[0044] The control circuit 174 provides the control impulse for controlling the IGBT 328 or the IGBT 330 , which are the upper branch or the lower branch of the upper and lower branch series circuit 150 of the respective phase, at the IGBT 328or the IGBT 330 the respective phase based on the control impulse described above. The IGBT 328 or the IGBT 330 executes a guiding or blocking operation and converts the signal from the battery. 136 DC power supplied based on the control pulse from the control circuit 174 It is converted into three-phase alternating current power. The converted power is supplied to the motor-generator MG1.

[0045] The upper branch IGBT 328 The collector electrode includes 153 , a signal emitter electrode 155 and a gate electrode 154 Furthermore, the sub-branch IGBT includes 330 a collector electrode 163 , a signal emitter electrode 165 and a gate electrode 164 A diode 156 of the upper branch is between the collector electrode 153 and the emitter electrode 155electrically connected. Additionally, a diode is included. 166 between the collector electrode 163 and the emitter electrode 165 electrically connected.

[0046] A metal-oxide-semiconductor field-effect transistor (hereafter referred to as "MOSFET") can be used as a semiconductor device for switching. In this case, the diode 156 or the diode 166 superfluous. As a semiconductor element for switching, the IGBT is suitable when the DC voltage is relatively high, and the MOSFET is suitable when the DC voltage is relatively low.

[0047] The capacitor module 500 includes several capacitor connections on the positive electrode side 506 , several capacitor connections on the negative electrode side 504 , a battery connection on the positive electrode side 509 and a battery connection on the negative electrode side 508A high-voltage direct current power supply from the battery 136 is connected to the battery terminal on the positive electrode side 509 and the battery connection on the negative electrode side 508 via the DC connection element 138 supplied and is connected to the capacitor terminal on the positive electrode side 506 and the capacitor connection on the negative electrode side 504 of the capacitor module 500 to the inverter circuit 140 delivered.

[0048] On the other hand, the DC power generated by the inverter circuit 140 and the inverter circuit 142 The alternating current power is converted from the capacitor connection on the positive electrode side. 506 or the capacitor connection on the negative electrode side 504 to the capacitor module 500supplied from the battery connection on the positive electrode side 509 and the battery connection on the negative electrode side 508 via the DC connection element 138 to the battery 136 delivered and in the battery 136 saved.

[0049] The control circuit 172 includes a microcomputer for a calculation process of the switching time specification of the IGBT. 328 and the IGBT 330 Input information to the microcomputer includes a target torque value required for the motor generator MG1, a current value specified by the upper and lower branch series circuit 150 supplied to the motor generator MG1, and a magnetic pole position of the rotor of the motor generator MG1.

[0050] The target torque value is based on a command signal issued by the (not shown) higher-level control device. The current value is based on a detection signal from a current sensor. 180 The magnetic pole position is detected based on a detection signal output by a rotary magnet pole sensor (not shown), such as a rotary encoder, provided in the motor generator MG1. In the embodiment, one case is where the current sensor 180 Three-phase current values ​​are detected and illustrated. However, current values ​​from two phases can also be detected, and the three-phase current values ​​can be calculated.

[0051] Current command values ​​of a d-axis and a q-axis of the motor generator MG1 are generated by the microcomputer in the control circuit. 172The target torque value is calculated. Then, the microcomputer described above calculates voltage command values ​​for the d-axis and q-axis based on the difference between the calculated current command values ​​for the d-axis and q-axis and the detected current values ​​for the d-axis and q-axis. The microcomputer then converts the calculated voltage command values ​​for the d-axis and q-axis into voltage command values ​​for the U-phase, V-phase, and W-phase based on the detected magnetic pole position. Finally, the microcomputer generates a pulsed modulation wave based on a comparison between a fundamental wave (sine wave) and a carrier wave (triangular wave) using the voltage command values ​​for the U-phase, V-phase, and W-phase. The microcomputer then sends the generated modulation wave to the control circuit. 174as a pulse width modulation signal (PWM signal).

[0052] When the sub-branch is activated, the control circuit 174 the control signal, which is generated by amplifying the PWM signal at the corresponding gate electrode of the IGBT 330 of the sub-branch is obtained. Additionally, the control circuit shifts 174 When the upper branch is driven, a level of a reference potential of the PWM signal is adjusted to a level of a reference potential of the upper branch, the PWM signal is amplified and the PWM signal is sent to the corresponding gate electrode of the IGBT. 328 of the upper branch as a control signal.

[0053] Additionally, the microcomputer performs the following functions in the control circuit 172 It performs an irregularity detection (overcurrent, overvoltage, overtemperature, and the like) and protects the upper and lower branch series circuit. 150 Thus, the acquisition information is fed into the control circuit. 172Information about the current through the emitter electrode of each IGBT is entered. For example, information about the current strength through the emitter electrode is entered. 328 and the IGBT 330 flows from the signal emitter electrode 155 and the signal emitter electrode 165 Each arm's signal is fed into a corresponding control section (IC). Thus, each control section (IC) performs an overcurrent detection and, if an overcurrent is detected, initiates a switching operation of the corresponding IGBT. 328 and the IGBT 330 and protects the corresponding IGBT 328 and the IGBT 330 before the overcurrent strength.

[0054] The temperature information of the upper and lower branch series circuit 150 from a temperature sensor (not shown) that is in the upper and lower branch series circuit 150The data is entered into the microcomputer. Additionally, voltage information is stored on the positive DC electrode side of the upper and lower branch series circuit. 150 The information is entered into the microcomputer. Based on this information, the microcomputer performs over-temperature and over-voltage detection and maintains the switching operation of both the IGBT and the microcomputer. 328 as well as the IGBT 330 This activates when an overtemperature or overvoltage is detected.

[0055] The following is a schematic arrangement of the power converter. 200 in the embodiment with reference to Fig. 5– Fig. 9 described.

[0056] Fig. 5 is a perspective view of the power converter 200 the embodiment. Fig. Figure 5 is a perspective view of a state in which a housing top cover (not shown) has been removed. The power converter 200includes a housing 20 to accommodate the arrangement elements of the in Fig. 3 and Fig. 4 power converters shown 200 A control circuit substrate 174a and a control circuit substrate 172a the arrangement elements that are in the housing 20 They are recorded on an upper side inside the housing. 20 arranged. The control circuit described above. 174 is on the control circuit substrate 174a Assembled. The control circuit described above. 172 is on the control circuit substrate 172a assembled.

[0057] The case 20 is equipped with an inlet pipe 30a for introducing a cooling refrigerant into the housing 20 and an outlet pipe 30b equipped for draining the cooling refrigerant.

[0058] In the power converter 200The embodiment is an example in which only one motor generator MG1 is operated as a motor or generator, i.e., an example in which only one inverter circuit is used. 140 as described. But as in Fig. 3 and Fig. As shown in section 4, it is also possible to use the inverter circuit 142 to be added. This structure has an essentially rectangular shape in a top view, which makes it easy to attach to the vehicle or the motor generator. Since all elements are enclosed by a housing bottom cover. 22 The fact that they can be stacked up to the top of the housing (not shown) also results in the effect of simple manufacturing.

[0059] Fig. Figure 6 is a perspective exploded view of the power converter. 200 of the embodiment. A power semiconductor module 150a and the capacitor module 500 , which the inverter circuit140 from Fig. 4 are formed within the housing 20 recorded. The power semiconductor module 150a , which is in the power converter 200 The embodiment used is a dual-type power semiconductor module comprising upper branch and lower branch switching elements.

[0060] A module recording room 20a is in the case 20 trained. The power semiconductor module described above. 150a is in the module recording room 20a recorded. In this case, an element forming a flow path is included. 2 , which is located between the power semiconductor module 150a inserts, also in the module recording space 20a recorded. The element forming a flow path 2 consists of a first side wall section, which is attached to the power semiconductor module 150afacing a second side wall section facing the first side wall section, wherein the power semiconductor module 150a is arranged in between, and a lower surface section that forms a lower surface of the power semiconductor module 150a spans and connects the first side wall section and the second side wall section.

[0061] Furthermore, the module recording room 20a In this embodiment, an opening section is provided to simplify the flow path. The element forming a flow path 2 The embodiment has a structure comprising three power semiconductor modules. 150a carries.

[0062] The element forming a flow path 2 is in the module recording room 20a recorded and forms together with the housing 20 a flow path through which the cooling refrigerant flows. That is, the element forming a flow path. 2as the first body forming a flow path and the casing 20 The casing acts as a second body forming a flow path. 20 functions as a flow path forming body and also functions as a structural element that carries an element that is the power converter 200 educates.

[0063] In this embodiment, the element forming a flow path 2 to form a flow path only around one circumference of the power semiconductor module on the power semiconductor module 150a pre-assembled in the same direction as a refrigerant flow direction, and then the element forming a flow path is 2 and the three power semiconductor modules 150a together in the module recording room 20a used.

[0064] The module recording room 20a of the case 20 is through a cover 5 sealed. A sealing material 1is between the cover 5 and the module recording room 20a arranged. The cover 5 is equipped with an opening section 5a provided, through which the wiring of the power semiconductor module 150a proceeds.

[0065] An AC power socket 189 , which has an output-side AC busbar 159a It holds, is above the cover 5 Provided. As described below, an AC power connection is provided on the power semiconductor module side. 159b (see Fig. 8(a)) of the power semiconductor module 150a with the output-side AC busbar 159a connected. Additionally, there is a positive electrode connection. 157b (see Fig. 8(a)) of the power semiconductor module 150a with a positive electrode busbar on the capacitor side 157a connected. A negative electrode connection 158b (see Fig. 8(a)) of the power semiconductor module 150a is equipped with a negative electrode busbar on the capacitor side 158a tied together.

[0066] Furthermore, the capacitor module 500 , which is composed of several capacitor cells 501 is formed in the case 20 arranged.

[0067] Fig. Figure 7 is a perspective exploded view of the power converter. 200 of the embodiment, viewed from below. A lower surface of the power converter. 200 is through the lower lid 22 sealed. A sealing material 8 is between the lower lid 22 and the case 20 planned.

[0068] The case 20 is with the module recording room 20a to accommodate the power semiconductor module 150a and the element forming a flow path 2 , a lower capacitor module flow path 20b, an inlet flow path 20c and an outlet flow path 20d The inlet flow path is equipped with... 20c is connected to the inlet pipe 30a connected. The lower capacitor module flow path 20b is connected to the inlet flow path 20c connected. The module recording room 20a is connected to the lower capacitor module flow path 20b connected. The outlet flow path 20d is with the module recording room 20a connected. The outlet pipe 30b is connected to the outlet flow path 20d connected. The module recording room 20a The power semiconductor module 150a and the element forming a flow path 2 and also functions as a flow path through which the refrigerant flows.

[0069] The refrigerant is drawn from the inlet pipe. 30a initiated and flows in a refrigerant flow direction within a turning section 23b , a lower condenser module refrigerant movement direction23c , a refrigerant flow direction before branching and passing through the power semiconductor module 23d , a refrigerant flow direction immediately after branching and passing through the power semiconductor module 23e , a refrigerant flow direction after merging and passing through the power semiconductor module 23f and an outlet-side refrigerant flow direction 23g in this order, starting with the inlet-side refrigerant flow direction 23a .

[0070] The flow path through the element forming a flow path 2 The system is designed to provide flow paths on both surface sides of the power semiconductor module. 150aThe flow paths are arranged in parallel. Since, in this embodiment, the flow paths are arranged in parallel across three modules, there are six flow paths arranged in parallel. Furthermore, the refrigerant flows through a lower section of the condenser module. 500 Cooling is also provided by the housing and the capacitor module.

[0071] Fig. 8(a) is a perspective view of the power semiconductor module 150a the embodiment. Fig. 8(b) is a cross-sectional view consisting of a cross-section B of Fig. 8(a).

[0072] Each of the power semiconductor modules 150a is equipped with a heat dissipation section 7 equipped with a surface on both sides of a metal housing 40 It is welded together with metal.

[0073] The power semiconductor module 150a takes the above-described upper and lower branch series connection 150 in the metal case 40and is injection-molded through an insulating layer. The metal housing 40 It can be a container made from a single piece, produced by molding it in the shape of a can and casting the heat dissipation fin section. 7 and a housing section 40a is obtained to reduce costs.

[0074] The power semiconductor module 150a has the positive electrode connection on the power semiconductor module side 157b , the negative electrode connection on the power semiconductor module side 158b and the AC connection on the power semiconductor module side 159b , a control pen / signal pen / temperature output pen and the like 160 on. The positive electrode connection on the power semiconductor module side 157b is connected to the positive electrode busbar on the capacitor side 157a connected and forms the positive electrode connection 157 from Fig. 4. The negative electrode connection on the power semiconductor module side 158b is connected to the positive electrode busbar on the capacitor side 158a connected and forms the negative electrode terminal 158 from Fig. 4. The AC connection on the power semiconductor module side 159b is connected to the output-side AC busbar 159a connected and forms the AC connection 159 from Fig. 4. The control pen / signal pen / temperature output pen and the like 160 is connected to the control circuit substrate 172 through the control circuit substrate 174a connected and exchanges information from a gate signal, an emitter detection signal, or a temperature sensor that are built into the power semiconductor.

[0075] Furthermore, the metal casing 40 the section 40a , which is the heat dissipation section 7 holds, and a section40b , which comes into contact with the sealing material on the side. If a sealing material such as an O-ring is used, a notch for the O-ring is provided in the section. 40b , which comes into contact with the sealing material, and the section 40b It features a curved surface to prevent damage to the O-ring. This allows for the provision of a cover opening section. 5a with a concave section in the cover 5 and by using a sealing material 6 (see Fig. 9) to achieve highly effective sealing properties between the module and the cover.

[0076] A first heat dissipation section 7a is on a surface of the power semiconductor module 150a formed and a second heat dissipation section 7bis formed on the other surface. Heat dissipation fins are formed in an area facing the power semiconductor device to improve heat dissipation properties. In this embodiment, the heat dissipation section has a finned shape. 7 a pin lamella, but it can be a different shape such as a straight lamella or a wavy lamella.

[0077] Fig. 9(a) is a cross-sectional view consisting of a cross-section A of Fig. 5 is taken from the power semiconductor module. 150a is arranged in such a way that it is separated from the element forming a flow path 2 is surrounded, and the element forming a flow path 2 is in the module recording room 20a , which is in the case 20 trained, recorded. The lower lid 22 is located in a lower section of the housing 20 through the sealing material 8 arranged. The cover5 is in the upper part of the case 20 through the sealing material 1 arranged.

[0078] The positive electrode busbar on the capacitor side 157a and the negative electrode busbar on the capacitor side 158a are above the cover 5 arranged. In addition, the control circuit substrate 174a furthermore, above the positive electrode busbar on the capacitor side 157a and the negative electrode busbar on the capacitor side 158a arranged and is connected to the control pen / signal pen / temperature output pen and the like 160 tied together.

[0079] Fig. 9(b) is an enlarged view of Fig. 9(a) to describe an order relationship between the power semiconductor module 150a , the element forming a flow path 2 and the cover 5 .

[0080] The cover 5is with a concave section 5b , which is located on the side of the module recording room 20a is formed, and the opening section 5a , which is formed by a lower surface of the concave section 5b to the upper surface of the lid 5 runs, provided.

[0081] The power semiconductor module 150a is designed in such a way that the flange section from which the connections ( 157b , 158b , 159b , and 160 ) of the power semiconductor module 150a protrude within the concave section 5b is arranged. The sealing material 6 is in the section 40b , which comes into contact with the sealing material, on the side surface of the power semiconductor module 150a arranged. The connection of the power semiconductor module 150a protrudes from the opening section 5a to the outside of the module recording room 20a .

[0082] The element forming a flow path 2 has a first side wall section 25a , a second side wall section 25b and a lower surface area 26 up. The first side wall section 25a is designed so that it is part of the first heat dissipation section 7a of the power semiconductor module 150a is facing the second side wall section 25b is designed so that it connects to the second heat dissipation section 7b of the power semiconductor module 150a is facing. A lower surface section 26 is designed to cover a lower surface of the power semiconductor module 150a spanned and the first side wall section 7a and the second side wall section 7b connects.

[0083] A flow path on the side of the first heat dissipation section. 27a is between the first side wall section 25aand the first heat dissipation section 7a of the power semiconductor module 150a Formed. A flow path on the side of the second heat dissipation section. 27b is between the second side wall section 25b and the second heat dissipation section 7b of the power semiconductor module 150a trained.

[0084] The first side wall section 25a and the second side wall section 25b have convex sections 25c The convex sections 25c are formed in areas where the heat dissipation fins, which are in Fig. 1 or Fig. The elements shown in section 2 are not formed. Thus, the refrigerant flows efficiently through a heat dissipation finned area. In this respect, the convex section is 25c on a side section of the flow path 27aformed on the side of the first heat dissipation section, on which the heat dissipation fins are located on the side of the first side wall section 25a are formed. The side section mentioned here refers to a section that connects to the flow path on the side of the first heat dissipation section in a direction perpendicular to the direction in which the cooling refrigerant flows. 27a adjacent, with the vertical direction parallel to a main surface of the power semiconductor module 150a is. In other words, the power semiconductor module 150a arranged so that it corresponds to the convex section 25c , which is in the first side wall section 25a is formed, and the flow path on the side of the first heat dissipation section 27a is turned towards, in order to see the convex section 25c , which is in the first side wall section 25ais formed; and the flow path on the side of the first heat dissipation section. 27a to span.

[0085] The convex section 25c is between the flow path on the side of the first heat dissipation section 27a , in which the heat dissipation fins are formed, and the flange section of the power semiconductor module 150a formed. Furthermore, in the example, the convex section 25c also between the flow path on the side of the first heat dissipation section 27a and the lower surface area 26 formed. Furthermore, the convex section 25c also between the second side wall section 25b and the power semiconductor module 150a formed, similar to the side of the first side wall section 25a .

[0086] The lower surface area 26 of the element forming a flow path 2is designed to be in contact with a lower surface of the power semiconductor module 150a is coming. Since the power semiconductor module 150a a structure that is defined by the lid 5 and the element forming a flow path 2 By holding it in place, vibration resistance is improved.

[0087] As the material that forms the element creating a flow path 2An elastic body is used to form the system. The elastic body is a material with heat resistance (-40°C to 100°C) and chemical resistance (insoluble in the refrigerant (ethylene glycol solution or propylene glycol solution)). For example, the elastic body material is rubber, a foam element (sponge element), a material that thermally expands at high temperatures, or a material that expands by reacting with the liquid. In particular, the rubber is preferably a silicon / ethylene propylene diene monomer (EPDM) / butyl rubber-based material. Specifically, the foam element (sponge element) is preferably polyethylene / urethane / EPDM / butyl rubber / silicon, which exhibits heat resistance. The material that expands by reacting with the liquid is chloroprene rubber or the like.

[0088] If the element forming a flow path 2Since the sponge element is formed, it is possible to fill the gap between the power semiconductor modules by cutting the seal and mixing it with air when assembling the sponge element in a vacuum packaging. The same applies when the element forming a flow path... 2 Since it is formed from the material that expands thermally at high temperature and the material that expands by reacting with the liquid, it is possible to fill the gap by the expansion of the material after assembly.

[0089] As described above, the power converter includes 200 of the embodiment the housing 20 , which accommodates parts and acts as a flow path forming body, and the housing 20 forms the module recording space 20a , which is the power semiconductor module 150a absorbs the power semiconductor module 150a , which is located in the module recording room 20aThe element that is recorded is arranged in such a way that it is separated from the element forming a flow path. 2 , which is the second body forming a flow path, is surrounded. The forming element 2 forms the flow path on the side of the first heat dissipation section. 27a between the element forming a flow path 2 and a surface of the power semiconductor module 150a and the element forming a flow path 2 forms the flow path on the side of the second heat dissipation section. 27b between the element forming a flow path 2 and the other surface of the power semiconductor module 150a .

[0090] As described above, the refrigerant used to cool the power semiconductor module flows 150a flows through the module recording room 20a , which is in the case 20 is formed, and flows through the flow path on the side of the first heat dissipation section.27a and the flow path on the side of the second heat dissipation section 27b , which is formed by the element that creates a flow path 2 , which is the second body forming a flow path. It is possible to define the gap that exists between the power semiconductor module. 150a and the module recording room 20a is generated with the element forming a flow path 2 to fill. Since the refrigerant does not flow through the gap, the cooling capacity of the power semiconductor module is thus improved.

[0091] Then, at the element forming one flow path, 2 the convex section 25cin the side section of the refrigerant flow path as described above. Since the amount of refrigerant flowing through the area forming the heat dissipation fins, which faces the power semiconductor device that needs to be cooled, preferably increases, the cooling capacity of the power semiconductor module is improved.

[0092] Then the cover 5 , which the module recording room 20a covers, with the concave section 5b equipped. Part of the power semiconductor module 150a is on the inside of the concave section 5b arranged and the power semiconductor module 150a is due to the sealing material 6 on the inside of the concave section 5b sealed. In this type of side-surface sealing method, the sealing material collapses. 6 for example, when the cover 5 to the case 20The screws are inserted into the side surface, regardless of the screw's pressing force. Therefore, it is not necessary for the screws to be located in the flow path around the power semiconductor module. 150a are provided and there is an effect that the number of screws is reduced.

[0093] Furthermore, it is because the sealing material 6 always collapses in the side surface, even when the dimensions in the vertical direction are reduced by manufacturing variations of the power semiconductor module or assembly variations, it is possible to prevent the liquid from leaking outwards.

[0094] Here, the sealing in the side surface of the thick plate is achieved by providing the concave section in the cover. 5This prevents [something]. If the thick plate is used, there is also a problem with the structure's resistance to seismic activity, since weight reduction is difficult and the center of gravity is high. It is possible to maintain stiffness only where it is needed and to reduce weight by providing the concave section.

[0095] As shown in the embodiment, the concave section 5b a positioning process during the insertion of the power semiconductor module 150a , if the concave section 5b in the cover 5 is provided, which includes the opening section 5a features, into which the connection of the power semiconductor module 150a is used. Furthermore, the power semiconductor module is used. 150anot only in the vertical direction but also in the horizontal direction, and it is possible to improve vibration resistance and reliability by arranging the flange section of the power semiconductor module. 150a on the inside of the concave section 5b to improve.

[0096] Then, when the element forming a flow path 2 is formed from the elastic body, and even if manufacturing variations occur during the production of the power semiconductor module, the variations are absorbed and it is possible to close the gap between the element forming a flow path. 2and to fill the power semiconductor module. This makes it possible to suppress the generation of local space bypass flow on its inner surface and improve cooling performance. Furthermore, fluctuations in the cooling performance of the power semiconductor module can be suppressed, which contributes to an improvement in cooling performance.

[0097] Additionally, there is a metal connecting section between a signal pin. 160 and the control circuit substrate 172 or a section in which the positive electrode connection 157b , the negative electrode connection 158b and the AC power connection described above 159bSince the components are welded together metallically, there is a need to ensure that communication failures do not occur due to vibrations that may be caused by the vehicle. With the side-surface sealing method of the embodiment, it is possible to improve vibration resistance by integrating the power semiconductor module with the flow path-forming element. 2 is covered, which is formed from the elastic body.

[0098] The control circuit substrate 174a and the control circuit substrate 172a are with the metal casing 20 thermally connected, heat is dissipated on the inside of the flow path by the metal element with high thermal conductivity to the cooling refrigerant. As further explained in Fig. 5 and Fig. Figure 6 shows the control circuit substrate 174a and the control circuit substrate 172a be formed in one piece.

[0099] The control circuit substrate 172a is equipped with a connecting element (not shown). The connecting element is connected to an external control device and carries out signal transmission between the control circuit and the control circuit. 172 , which are in the control circuit substrate 172a is provided for, and the external control device such as a higher-level control device.

[0100] Furthermore, the positive electrode busbar on the capacitor side 157a and the negative electrode busbar on the capacitor side 158a To prevent heat from entering the power semiconductor module when a high current flows, it is necessary to prevent heat from entering the module. 150a This makes it possible to prevent heat from entering the power semiconductor module. 150a This is achieved by causing the busbar to come into thermal contact with the cover. 5comes to fix the power semiconductor module. If the cover 5 Since it is a metal material, the busbar comes with a cover. 5 through an insulating layer in thermal contact, but the material of the cover can be an insulating material such as resin.

[0101] Furthermore, in the embodiment described above, the power converter mounted on the electric vehicle or the hybrid electric vehicle is described as an example, but it is possible to apply the invention to a power converter if the power converter has a cooling structure in which the power semiconductor module is immersed in the cooling refrigerant. Second example

[0102] A schematic arrangement of a power converter 200 A second example is given with reference to the Fig. 10 and Fig. 11 described. Fig. Figure 10 shows a modified example where the element forming a flow path 2 of the first example to a first element forming a flow path 2a and a second element forming a flow path 2b The changes are made. Since the other arrangements are the same as those in the first example, a detailed description is unnecessary.

[0103] The first element forming a flow path 2a is on a power semiconductor module 150a as well as when assembling the element that forms a flow path 2 on the power semiconductor module 150a In the first example, it is mounted from the same direction as the direction of refrigerant flow. In this first example, the element forming a flow path is... 2 assembled to accommodate all three power semiconductor modules 150a to hold, but in this embodiment two adjacent power semiconductor modules are used. 150aamong the three power semiconductor modules 150a on the first element forming a flow path 2a assembled.

[0104] A power semiconductor module 150a , which is between the two other power semiconductor modules 150a among the three power semiconductor modules 150a is arranged in such a way that the first element forming a flow path 2a to the center of the power semiconductor module 150a is mounted there. Then the second element forming a flow path is 2b arranged in such a way that there is point symmetry with the first element forming a flow path 2a with regard to the center of the power semiconductor module 150a exhibits.

[0105] Fig. 11 is a cross-sectional view consisting of a cross-section C of Fig. 10 is taken from below. A power semiconductor module 150a among the three power semiconductor modules150a is formed by the first element creating a flow path 2a held. The power semiconductor module 150a , which is between the two other power semiconductor modules 150a among the three power semiconductor modules 150a is arranged, is formed by the first element forming a flow path 2a and the second element forming a flow path 2b held. A remaining power semiconductor module 150a among the three power semiconductor modules 150a is formed by the second element that creates a flow path 2b held.

[0106] The first element forming a flow path 2a forms a connecting flow path that links two flow paths located in a side section of a first power semiconductor module. 150a are formed, and two flow paths that are located in a side section of a second power semiconductor module. 150aThey are formed and connect. Similarly, the second element forms a flow path. 2b also a connecting flow path that links two flow paths located in a side section of a second power semiconductor module 150a are formed, and two flow paths that are located in a side section of a third power semiconductor module. 150a They are trained, which connects them.

[0107] In the first example, the refrigerant flows to the three power semiconductor modules. 150a The refrigerant flows through the flow paths, which branch into six parallel flow paths, but in this example, the refrigerant flowing through the flow path actually flows through the flow path that branches into two flow paths. In other words, in the first example, the three power semiconductor modules... 150a parallel cooling, but in this embodiment the three power semiconductor modules 150a serially cooled.

[0108] For a refrigeration system that operates a large pump capable of tolerating significant pressure drop, reducing the number of branched flow paths increases the refrigerant flow rate to a module. As a result, and because the heat transfer coefficient is increased, the cooling capacity can be improved.

[0109] In this embodiment, it is possible to change the cooling capacity simply by changing the element forming a flow path. 2 of the first example into the first element forming a flow path 2a and the second element forming a flow path 2b , which are separate from each other. Therefore, it is not time-consuming to make a design change to entire elements of the power converter.

[0110] Furthermore, the flow path around the power semiconductor module, where the processing control becomes complicated, is formed from the elastic body, thus making it possible to avoid an increase in processing costs. Third example

[0111] A schematic arrangement of a power converter 200 A third example is given with reference to Fig. 12 described.

[0112] Fig. Figure 12 shows a modified example in which three power semiconductor modules 150a each in different module recording rooms 20a are housed.

[0113] In this embodiment, there are three module receiving spaces. 20a in a case 20 trained. The three module recording rooms 20a are connected in series and form a refrigerant flow path from an inlet pipe 30a to an outlet pipe 30bThe first and second examples differ from this example in that the three power semiconductor modules 150a in a module recording room 20a are recorded.

[0114] Similar to the first and second examples, the power semiconductor module 150a in the module recording room 20a recorded in a state in which an element forming a flow path 2c is mounted. In this embodiment, the element forming a flow path is 2c on each of the three power semiconductor modules 150a assembled.

[0115] In this embodiment, it is necessary that three module receiving spaces are available. 20a in the case 20 be provided. But since the elements forming a flow path 2c The manufacturability of the element forming a flow path is what can be made small. 2cIt is itself increased. Furthermore, since the three power semiconductor modules do not need to be inserted into the module mounting space after all three power semiconductor modules are mounted on the single flow path element, the ease of assembly is improved.

[0116] In this embodiment, similar to the second example, a flow path that branches into two flow paths is formed in the power semiconductor module. Furthermore, the structure is provided with a module that includes a flange section. 3 features, and is achieved by providing an O-ring in a lower surface of the flange without using a cover 5 sealed. In this embodiment, a sealing method for the power semiconductor module can be not the side surface sealing but a sealing of the lower surface of the flange. Fourth example

[0117] In the third example, an element forming a flow path is used.2c with regard to a power semiconductor module 150a provided, however, as in Fig. 13 and Fig. Figure 14 shows several elements combined. This embodiment illustrates a modified example in which an element forming a flow path is created by combining several elements.

[0118] Fig. Figure 13 is a perspective exploded view showing a structure for a case in which several flow path-forming elements are combined and gaps other than the heat dissipation section are filled with the several flow path-forming elements. Fig. 14 is a view after the assembly of the several elements forming a flow path, which are in Fig. 13 are shown, viewed from a side face.

[0119] In this embodiment, the element forming a flow path is separated from an upper spacer. 2d , a lower spacer2e and a side surface element 2f formed. The upper spacer 2d is between heat dissipation fins and a flange section of a power semiconductor module 150a arranged. The lower spacer 2e is an element in which a concave section is formed to form a lower surface of the power semiconductor module 150a to be recorded, and is located in an area opposite an area where the upper spacer 2d is arranged, wherein a heat dissipation fin-forming area of ​​the power semiconductor module 150a is positioned in between. The upper spacer 2d has a function that is that of the in Fig. 9(b) described convex section 2c This corresponds to the lower spacer. Furthermore, the lower spacer has... 2e a function that is similar to that of the convex section 2c and that of the lower surface area 26 corresponds to the one in Fig. 9(b) are described. The side surface element 2f is arranged in a position that corresponds to a heat dissipation section 7 of the power semiconductor module 150a is facing and forms a flow path through which the refrigerant flows between the side surface section 2f and flows into the power semiconductor module.

[0120] The upper spacer 2d and the lower spacer 2e The embodiment is made of a rubber material. Furthermore, the side surface element 2f A metal element with a leaf spring structure. The leaf spring structure has an oval shape, an irregular shape, and the like, as shown in Fig. 13 shown. The leaf spring structure is designed such that the side surface element 2f in the direction of the heat dissipation fins of the power semiconductor module 150a is pressed.

[0121] In this embodiment, it is possible to reduce the manufacturing costs of a flow path-forming element by designing the flow path-forming element to be divided into several sections with which the gaps are filled.

[0122] Each of the embodiments described above can be used alone or in combination. This is because it is possible to achieve the effects of each embodiment individually or synergistically. Furthermore, the invention is not limited to the embodiments described above, as long as the properties of the invention are not impaired. Reference symbol list 1 Sealing material for cover and housing 2. Element forming a flow path 2a First element forming a flow path 2b Second element forming a flow path 2c Flow path-forming element for each module 2D Upper Spacer 2e Lower spacer 2f side surface element 3 Module flange section 5 Cover 5a Cover opening section 5b Concave Section 6 Sealing material between module and cover 7 Heat dissipation section 7a First heat dissipation section 7b Second heat dissipation section 7c One-piece flange 8 Sealing material between lower cover and housing 20 cases 20a Module recording room 20b Lower capacitor module flow path 20c Inlet Flowway 20d Outlet flow path 21 Connecting element 22 Lower lid 23 Refrigerant movement direction 23a Inlet-side refrigerant flow direction 23b Turning section - Refrigerant flow direction 23c Lower condenser module refrigerant flow direction 23d Refrigerant flow direction before branching and passing through the power semiconductor module 23e Refrigerant flow direction immediately after branching and passing through the power semiconductor module 23f Refrigerant flow direction after merging and passing through the power semiconductor module 23g Outlet-side refrigerant flow direction 25a First side wall section 25b Second side wall section 25c Convex section 26 Lower surface section 27a Flow path on the side of the first heat dissipation section 27b Flow path on the side of the second heat dissipation section 30a Inlet pipe 30b Outlet pipe 40 metal housings Section 40a, which is the heat dissipation section 7 holds 40b section that comes into contact with the sealing material on the side surface 120 Power Machine 130 Thick section 131 Thin section 136 Battery 138 DC connection element 140, 142 Inverter circuit 144 Heat dissipation fin group 150 upper and lower branch series connection 150a Dual Power Semiconductor Module 153 Collector electrode of the upper branch IGBT 154 Gate electrode 155 Signal emitter electrode 156 Upper branch diode 157 Positive electrode connection 157a Capacitor-side positive electrode busbar 157b Power semiconductor module-side positive electrode connection 158 Negative electrode connection 158a Capacitor-side negative electrode busbar 158b Power semiconductor module-side negative electrode connection 159 AC connection 159a Output-side AC busbar 159b AC power semiconductor module connection 160 control pins, signal pins, temperature output pins and the like 163 Collector electrode of the sub-branch IGBT 164 Gate electrode 165 Signal emitter electrode 166 Sub-branch diode 169 Intermediate electrode 172 Control circuit 172a Control circuit substrate 174 Control circuit 174a Control circuit substrate 174b Control circuit substrate opening section 180 current sensor 188 AC connection element 189 AC power sockets 198 AC connection element 200 power converters 328 Upper branch IGBT 330 Sub-branch IGBT 500 capacitor module 501 Capacitor cell 504 Capacitor connection on the side of the negative electrode 506 Capacitor connection on the side of the positive electrode 508 Power supply connection on the side of the negative electrode 509 Power supply connection on the side of the positive electrode

Claims

[1] Power converter comprising: a power semiconductor module that converts a direct current into an alternating current; a first body forming a flow path; and a second flow path-forming body that forms a receiving space for receiving the power semiconductor module and the first flow path-forming body, wherein the first flow path forming body is formed from a first side wall section facing the power semiconductor module, a second side wall section facing the first side wall section, with the power semiconductor module arranged between them, and a lower surface section spanning a lower surface of the power semiconductor module and connecting the first side wall section and the second side wall section, wherein the first sidewall section forms a first flow path space between a surface of the power semiconductor module and the first sidewall section; wherein the second sidewall section forms a second flow path space between the other surface of the power semiconductor module and the second sidewall section; and where cooling refrigerant flows through the receiving chamber, the first flow path chamber and the second flow path chamber. [2] Power converter according to claim 1, wherein the power semiconductor module comprises a first heat dissipation section facing the first side wall section, a second heat dissipation section facing the second side wall section and facing the first heat dissipation section, the power semiconductor module being arranged between them, and a power semiconductor device being arranged between the first heat dissipation section and the second heat dissipation section, wherein the first heat dissipation section has an area in which heat dissipation fins are formed and an area in which no heat dissipation fins are formed, wherein the first flow path space is formed in an area facing the area in which heat dissipation fins are formed, wherein the first side wall section has a convex section, and wherein the convex section projects in the direction of the first heat dissipation section in an area facing the area in which no heat dissipation fins are formed. [3] Power converter according to claim 1 or 2, wherein the first body forming a flow path is designed such that the lower surface section comes into contact with the lower surface of the power semiconductor module. [4] Power converter according to any one of claims 1 to 3, further comprising: a cover that covers the recording area, wherein the cover has a concave section and an opening section formed on a lower surface of the concave section, wherein a connection of the power semiconductor module penetrates into the opening section, and wherein the power semiconductor module is arranged such that part of the power semiconductor module is fixed within the concave section. [5] Power converter according to any one of claims 1 to 4, wherein the power semiconductor module comprises a first power semiconductor module and a second power semiconductor module, wherein the second power semiconductor module is arranged such that it faces the first power semiconductor module, with the second side wall section arranged between them, wherein the first flow path forming body further has a third side wall section facing the second side wall section, wherein the second power semiconductor module is arranged between them, wherein the second side wall section forms a third flow path space between a surface of the second power semiconductor module and the second side wall section, wherein the third side wall section forms a fourth flow path space between the other surface of the second power semiconductor module and the third side wall section, wherein the first body forming a flow path forms a connecting flow path space, and wherein the first body forming a flow path is designed such that the connecting flow path space is connected to the first flow path space, the second flow path space, the third flow path space and the fourth flow path space. [6] Power converter according to any one of claims 1 to 5, wherein the first flow path forming body is formed by an elastic body. [7] Power converter according to claim 6, wherein the elastic body is silicon / EPDM / butyl / chloroprene based rubber. [8] Power converter according to claim 6, wherein the elastic body is a foam based on polyethylene / urethane / EPDM / butyl rubber / silicon. [9] Power converter according to any one of claims 1 to 5, wherein the first flow path forming body is designed such that one or both of the first side wall section and the second side wall section have a leaf spring structure to be pressed towards the power semiconductor module.