Display device and its manufacturing process
DE112014006754B4Pending Publication Date: 2026-08-06SEMICON ENERGY LAB CO LTD
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2014-11-21
- Publication Date
- 2026-08-06
Abstract
A method for manufacturing a display device (300b), comprising the following steps: forming a first organic resin layer (320a) over a first substrate (462); forming a first insulating film (321a) over the first organic resin layer (320a); forming a transistor (350, 352) with a channel-forming region over the first insulating film (321a), wherein the channel-forming region comprises an oxide semiconductor material; forming a second insulating film (321b) over the transistor (350, 352); forming a light-emitting element (480) over the second insulating film (321b), wherein the light-emitting element (480) is electrically connected to the transistor (350, 352);Attaching a second substrate (463) over the light-emitting element (480), wherein the second substrate (463) has a second organic resin layer (320b) such that the second organic resin layer (320b) is arranged between the light-emitting element (480) and the second substrate (463); irradiating the first organic resin layer (320a) with a first laser through the first substrate (462); separating the first substrate (462) from the first organic resin layer (320a) after irradiation with the first laser; attaching a first flexible substrate (301) to the first organic resin layer (320a) after separating the first substrate (462) from the first organic resin layer (320a); irradiating the second organic resin layer (320b) with a second laser through the second substrate (463); separating the second substrate (463) from the second organic resin layer (320b) after irradiation with the second laser;and attaching a second flexible substrate (307) to the second organic resin layer (320b) after separating the second substrate (463) from the second organic resin layer (320b).
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Citation Information
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