Laser diode device

Abstract

Laser diode device (10), comprising - a carrier (1) with a carrier top (11), - a plurality of laser diode chips (4) arranged on the carrier top side (11), each of the laser diode chips (4) emitting electromagnetic radiation through a radiation surface (5) during operation, the radiation surfaces (5) each extending perpendicularly to the carrier top side (11), - at least one optical element (6) which deflects the electromagnetic radiation emitted by the laser diode chips (4) at least partially perpendicular to the carrier top side (11), - several chip carriers (7), and - a mounting plate (3) which is arranged on the carrier top side (11) and at least partially covers it, wherein the mounting plate (3) is located between the chip carriers (7) and the carrier (1), wherein - the laser diode chips (4) have different emission wavelengths, - the emission wavelengths differ by no more than 15 nm, and - the laser diode chips (4) are directed towards the optical element (6) in such a way that light beams of the laser diode chips (4) deflected by the optical element (6) at least partially overlap, - exactly one laser diode chip (4) is arranged on each of the chip carriers (7), - the chip carriers (7) electrically insulate the laser diode chips (4) from the carrier (1), - each of the chip carriers (7) comprises a ceramic, in particular AlN, and - the mounting plate (3) is a copper plate.

Description

[0001] The invention relates to a laser diode device.

[0002] Semiconductor lasers are highly sensitive to temperature and thus have a degradation of their efficiency, which leads to a limitation of the maximum achievable optical emission power.

[0003] The document DE 10 2008 063 634 A1 describes a light source with several laser diodes.

[0004] The document US 2011 / 0 280 266 A1 describes a semiconductor laser device.

[0005] The document DE 10 2010 012 604 A1 describes a semiconductor laser light source.

[0006] The document US 2008 / 0 175 284 A1 describes a light-emitting device for visual applications.

[0007] The document US 2010 / 0 296 061 A1 describes a projection device with reduced speckles.

[0008] The publication KR 10 0 879 974 B1 concerns a laser module with at least two laser light sources.

[0009] The publication US 2002 / 0 196 414 A1 describes a system for reducing speckles.

[0010] The document US 2002 / 0 018 500 A1 describes a semiconductor laser unit and a semiconductor laser module.

[0011] The document US 2004 / 0 008 744 A1 describes a multiplex laser light source.

[0012] The document CN 2 01 466 466 U describes a device for polarization-dependent superposition of laser light.

[0013] The invention is based on the object of providing a laser diode device with efficient heat spreading in the component and an increased optical radiation power.

[0014] These objects are achieved by a laser diode device according to the independent patent claim. Advantageous embodiments and further developments of the invention are the subject of the dependent claims.

[0015] The laser diode device comprises a carrier having a carrier top.

[0016] The laser diode device comprises a plurality of laser diode chips arranged on the carrier's top side, each of which emits electromagnetic radiation through a radiation surface during operation. The laser diode chips can be arranged directly on the carrier's top side or mounted on the carrier's top side by means of a mounting plate. The radiation surfaces each extend perpendicular to the carrier's top side. The radiation surface is, for example, a side surface of the laser diode chip. Thus, a laser diode chip preferably emits radiation in a radiation direction that runs parallel to the main plane of the carrier's top side.

[0017] The emission surface is the area of the laser diode chip through which at least a large portion of the radiation emitted during operation of the laser diode chip exits the chip. In this case, the laser diode chip is, in particular, an edge-emitting laser diode chip.

[0018] According to at least one embodiment of the laser diode device, the laser diode chips are configured, in particular, to emit electromagnetic radiation in the spectral range between UV radiation and infrared radiation during operation. For example, the laser diode chips can be configured to emit UV radiation, blue light, green light, red light, or infrared radiation during operation. In particular, each of the laser diode chips is a laser diode chip based on a nitride compound semiconductor material.

[0019] Based on nitride compound semiconductor material in the present context means that a semiconductor layer sequence of a laser diode chip or at least a part thereof, particularly preferably at least one active zone and / or a growth substrate wafer, contains a nitride compound semiconductor material, preferably Al n Ga m In 1-n-mN or consists of it, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1, and n+m ≤ 1. This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it can, for example, contain one or more dopants as well as additional components. For the sake of simplicity, however, the above formula only includes the essential components of the crystal lattice (Al, Ga, In, N), even if these may be partially replaced and / or supplemented by small amounts of other substances.

[0020] Each of the laser diode chips can, in particular, have an epitaxially grown semiconductor layer sequence comprising an active layer formed, for example, from AlGaInN and / or InGaN. The active layer is then configured to emit electromagnetic radiation from the spectral range from ultraviolet radiation to green light during operation. The laser diode chip can, for example, have a conventional pn junction, a double heterostructure, or a quantum well structure, particularly preferably a multiple quantum well structure, as the active layer. The term "quantum well structure" has no significance with regard to the dimensionality of the quantization. It thus includes, among other things, quantum wells, quantum wires, and quantum dots, and any combination of these structures.

[0021] Each of the laser diode chips is characterized in particular by a high optical output power. In one claimed embodiment, the laser diode chips each have an optical output power of at least 0.1 W.

[0022] The laser diode device comprises at least one optical element which advantageously deflects the electromagnetic radiation emitted by the laser diode chips at least partially perpendicular to the carrier top side.

[0023] The optical element advantageously deflects at least a portion of the electromagnetic radiation emitted by the emitting surfaces of the laser diode chips from the laser diode device by means of optical refraction and / or reflection. After the emitted electromagnetic radiation strikes the optical element, it is advantageously deflected at an angle of preferably 90° to the top of the carrier. Furthermore, the optical element can influence, in particular, the shape and direction of the emitted light beam.

[0024] The laser diode device comprises a mounting plate which is arranged on the carrier top side and at least partially covers it, wherein the mounting plate is located between the laser diode chips and the carrier.

[0025] The mounting plate is preferably arranged on the top side of the carrier such that a main plane of the mounting plate runs parallel to the top side of the carrier. The mounting plate preferably has a flat surface, which enables an advantageously flat arrangement of components of the laser diode device on the mounting plate.

[0026] Each of the laser diode chips is preferably arranged with its largest outer surface on the mounting plate. This advantageously results in the largest possible surface contact between each laser diode chip and the mounting plate, thereby increasing the heat dissipation from the laser diode chip to the mounting plate. This design enables direct heat dissipation from the laser diode chip to the mounting plate. This ensures a very good thermal connection between the laser diode chip and the mounting plate and the carrier. The advantageously achieved increase in the efficiency of heat dissipation from the laser diode chip enables the use of multiple laser diode chips in the component without significant coupling effects occurring between the laser diode chips.Furthermore, the laser diode chip is aligned in such a way that the radiation direction of the electromagnetic radiation runs parallel to the main plane of the mounting plate, whereby the radiation surface of the laser diode chip is perpendicular to the mounting plate.

[0027] Furthermore, the mounting plate is advantageously characterized by high thermal conductivity, which leads to efficient heat spreading in the mounting plate.

[0028] Thus, the high thermal conductivity of the mounting plate advantageously results in increased heat transfer from the laser diode chip, which emits heat during operation, to the carrier.

[0029] The mounting plate is a copper plate.

[0030] The mounting plate can advantageously have a thickness of 100 µm to a few mm.

[0031] According to at least one embodiment of the laser diode device, the mounting plate preferably has a thickness of at least 0.5 mm and at most 2 mm.

[0032] The laser diode chips are each arranged on a chip carrier.

[0033] The chip carrier is preferably designed as a thin plate with a flat surface and serves as a base for the respective laser diode chip during assembly. The chip carrier is advantageously made of a material with high thermal conductivity. This advantageously ensures efficient heat dissipation from the laser diode chip to the carrier. The chip carrier electrically insulates the laser diode chip from the carrier. For this purpose, the material of the chip carrier is preferably a dielectric material and in particular does not contain any metal. The chip carrier material comprises a ceramic such as AlN. Only one laser diode chip is arranged on each chip carrier. The use of chip carriers advantageously allows laser diode chips to be mounted quickly, easily, and securely. Advantageously, several laser diode chips can be arranged on the top side of the carrier and directed onto the optical element.

[0034] According to at least one embodiment of the laser diode device, the optical element is a prism. The use of a prism can be advantageously used to deflect light beams through refraction. For example, light beams from multiple laser diode chips can advantageously be deflected by one or more prisms in such a way that the light beams are spatially separated from one another or partially or completely overlap.

[0035] According to at least one embodiment of the laser diode device, the optical element is a mirror. As an alternative option for deflecting emitted light beams from the laser diode chips, the use of at least one mirror as an optical element advantageously enables the deflected light beams to be aligned by reflection. The mirror is advantageously characterized by high reflectivity, so that virtually no losses occur when the laser light is deflected by reflection.

[0036] According to at least one embodiment of the laser diode device, the optical element is a polarization cube. To deflect differently polarized laser light from the emission direction of the laser diode chips and at least partially superimpose it, a polarization cube, for example, is used as the optical element.

[0037] According to at least one embodiment of the laser diode device, at least one retardation plate is arranged between at least one laser diode chip and the optical element. A retardation plate can advantageously be arranged between a laser diode chip and the optical element on the top side of the carrier. The retardation plate can also be formed, for example, as a film and advantageously applied to the optical element.

[0038] By using at least one delay plate, it is advantageous to generate differently polarized light using identical laser diode chips.

[0039] According to at least one embodiment of the laser diode device, the retardation plate is a λ / 2 plate.

[0040] A combination of multiple laser diode chips advantageously enables an increase in the emitted light intensity by redirecting the emitted light from each individual laser diode chip by an optical element into a preferably common emission direction. Laser diode chips of the same design can advantageously be used. For example, light of the same wavelength from multiple laser diode chips can be combined into a single high-intensity emission beam. Alternatively, it is also advantageous to position delay elements, wave plates, wave foils, or conversion elements between the respective laser diode chips and the optical element to redirect the emission beam. This advantageously allows for the superposition of multiple wavelengths.

[0041] The laser diode chips are directed towards the optical element in such a way that the light beams of the laser diode chips deflected by the optical element at least partially overlap.

[0042] According to at least one unclaimed embodiment of the laser diode device, the laser diode chips are directed towards the optical element in such a way that light beams of the laser diode chips deflected by the optical element do not overlap.

[0043] With this arrangement of laser diode chips, deflection by the optical element results in spatially separated light beams. The deflection surfaces of the optical element are not directed toward the same emission point.

[0044] The laser diode chips have different emission wavelengths.

[0045] In addition to the use of waveplates, the laser diode chips themselves can also advantageously emit different wavelengths to generate different emission wavelengths of the laser diode device. This offers the possibility of accessing a broad spectrum of wavelengths.

[0046] Thus, the separate light beams are advantageously composed of light from multiple laser diode chips. The light beams can be at least partially superimposed with light of the same wavelength / polarization or of different wavelengths / polarizations.

[0047] The emission wavelengths of the laser diode chips differ from each other by only 10 nm or 15 nm at most.

[0048] The difference in the wavelengths of the individual laser diode chips can advantageously be only slight. In other words, all laser diode chips can have wavelengths of the same color impression, for example, the color red. The difference between the wavelengths can advantageously be as little as 10 nm or 15 nm. Such a difference in the emission wavelengths of the laser diode chips can advantageously be achieved by different designs of the laser diode chips, for example, by the choice of semiconductor materials.

[0049] By superimposing emission wavelengths with similar color impressions, the bandwidth of the superimposed light can be increased and, for example, speckles in the laser light can be reduced.

[0050] Thus, it is advantageously possible for a single laser diode device to take on the role of several light sources.

[0051] According to at least one embodiment of the laser diode device, the laser diode device comprises a housing which is a TO housing.

[0052] According to at least one embodiment of the laser diode device, the TO housing is sealed against the environment and, in particular, hermetically sealed. The housing is advantageously filled with a protective gas or evacuated.

[0053] Furthermore, the present disclosure relates to the following aspects and combinations of aspects, which are numbered: 1. Laser diode device (10) comprising - a carrier (1) with a carrier top (11), - at least one laser diode chip (4) which is arranged on the carrier top side (11), wherein the laser diode chip (4) emits electromagnetic radiation through a radiation surface (5) during operation, wherein the radiation surface (5) runs perpendicular to the carrier top side (11), and - at least one optical element (6) which deflects the electromagnetic radiation emitted by the laser diode chip (4) at least partially perpendicular to the carrier top side (11). 2. Laser diode device (10) according to aspect 1, comprising a mounting plate (3) which is arranged on the carrier top side (11) and at least partially covers the latter, wherein the mounting plate (3) is located between the at least one laser diode chip (4) and the carrier (1). 3. Laser diode device (10) according to one of aspects 1 or 2, wherein a plurality of laser diode chips (4) are arranged on the carrier top side (11). 4. Laser diode device (10) according to aspect 3, wherein the laser diode chips (4) have different emission wavelengths. 5. Laser diode device (10) according to aspect 4, wherein the emission wavelengths of the laser diode chips (4) differ from each other by only 10 nm or 15 nm at most. 6. Laser diode device (10) according to one of aspects 2 to 5, wherein the mounting plate (3) is formed by a Cu plate. 7. Laser diode device (10) according to one of aspects 2 to 6, wherein the mounting plate (3) has a thickness of at least 0.5 mm and at most 2 mm. 8. Laser diode device (10) according to one of the preceding aspects, wherein the at least one laser diode chip (4) is arranged on a chip carrier (7). 9. Laser diode device (10) according to one of the preceding aspects, wherein the optical element (6) is a prism. 10. Laser diode device (10) according to one of aspects 1 to 8, wherein the optical element (6) is a mirror. 11. Laser diode device (10) according to one of aspects 1 to 8, wherein the optical element (6) is a polarization cube. 12. Laser diode device (10) according to one of the preceding aspects, wherein at least one delay plate (8) is arranged between the laser diode chip (4) and the optical element (6). 13. Laser diode device (10) according to aspect 12, wherein the delay plate (8) is a λ / 2 plate. 14. Laser diode device (10) according to one of aspects 3 to 5, wherein the laser diode chips (4) are directed towards the optical element (6) in such a way that light beams of the laser diode chips (4) deflected by the optical element (6) at least partially overlap. 15. Laser diode device (10) according to one of aspects 3 to 5, wherein the laser diode chips (4) are directed towards the optical element (6) in such a way that light beams of the laser diode chips (4) deflected by the optical element (6) do not overlap. 16. Laser diode device (10) according to one of the preceding aspects, wherein the laser diode device (10) comprises a housing (2) which is a TO housing. 17. Laser diode device (10) according to aspect 16, wherein the housing (2) is sealed against the environment and in particular hermetically sealed, wherein the housing is filled with a protective gas or evacuated.

[0054] Further features, embodiments and expediencies emerge from the following description of the embodiments in conjunction with the figures.

[0055] Figures 2, 2a, 3, 3a, 3b and 4 each show a laser diode device according to the embodiments of the invention.

[0056] The Fig. 1 and Fig. 1a shows an example of a modification of a laser diode device not according to the claims.

[0057] Identical or functionally equivalent elements are provided with the same reference numerals in the figures. The components depicted in the figures, as well as their relative sizes, are not to scale.

[0058] Fig. 1 shows an example of a laser diode device 10 described here in a schematic side view. The laser diode device 10 comprises a carrier 1, which in this case is made of steel. A mounting plate 3 is fastened to a carrier top side 11, wherein the mounting plate 3 partially covers the carrier top side 11. In this case, the mounting plate 3 is made of copper, which provides a high thermal conductivity. Furthermore, in particular two contact rods 9a and 9b, which are electrically insulated from one another and advantageously from the carrier 1 and the mounting plate 3, pierce the carrier 1 and the mounting plate 3, wherein these contact rods are in the schematic side view of the Fig. 1 obscure each other and therefore in the Fig. 1 only the contact rod 9a is shown. The exemplary position of both contact rods 9a and 9b is shown in a plan view of the mounting plate 3 in Fig. 3 shown.

[0059] The laser diode device 10 comprises a laser diode chip 4, which is in particular an InGaN laser formed from epitaxially grown semiconductor layers. Advantageously, this is an edge emitter that, during operation, emits electromagnetic radiation through a radiation surface 5, wherein the radiation surface 5 is a side surface of the laser diode chip 4. In the present example, the laser diode chip 4 emits electromagnetic radiation parallel to a main plane of the mounting plate 3.

[0060] The laser diode chip 4 is designed such that it is mounted with one long side on a chip carrier 7, wherein this long side advantageously forms the largest surface of the laser diode chip 4. Furthermore, the emission surface 5 is perpendicular to the chip carrier 7.

[0061] The chip carrier 7 serves in particular as a base for the laser diode chip 4, advantageously electrically insulates the laser diode chip 4 from the carrier, and is formed, for example, from AlN. Furthermore, electrical contacting of the laser diode chip 4 can be effected by means of bonding wire connections from the contact rods 9a and 9b, although this is not included in the Fig. 1. The AlN design of the chip carrier 7 is characterized by high thermal conductivity and thus an effective thermal connection of the laser diode chip 4 to the mounting plate 3. Thus, during operation, efficient heat dissipation from the laser diode chip 4 to the mounting plate 3 and further heat spreading within the mounting plate 3 are achieved, with heat also being dissipated from the mounting plate 3 into the carrier 1.

[0062] An optical element 6, which in particular comprises a prism, is arranged on the mounting plate 3. The prism advantageously serves to deflect the electromagnetic radiation emitted by the laser diode chip 4 by means of refraction. The deflection preferably occurs in a direction A facing away from the mounting plate 3 and the carrier top side 11.

[0063] The Fig. 1a shows in a schematic sectional view the example of the Fig. 1, wherein a housing 2 is mounted on the carrier 1. The housing 2 advantageously has an opening in the radiation direction above the optical element 6.

[0064] In connection with the Fig. 2 shows a schematic sectional view of an embodiment in which, in contrast to, for example, the Fig. 1 two laser diode chips 4 and a retardation plate 8 are arranged on the mounting plate 3. The laser diode chips 4 can advantageously be identical in construction and emit electromagnetic radiation of the same wavelength or, alternatively, can be different in construction and have different emission wavelengths. Each of the two laser diode chips 4 is advantageously mounted on the mounting plate 3 with its own chip carrier 7 and emits radiation through the radiation surface 5 in the direction of the optical element 6. The optical element 6 can advantageously be a prism which is preferably irradiated axially symmetrically with respect to its central axis by two opposing laser diode chips 4, wherein a retardation plate 8 is mounted on the mounting plate 3 between a laser diode chip 4 and the prism.Alternatively, the optical element 6 can also consist of two mirrors, with the two mirror surfaces each replacing the two deflecting surfaces of the prism. The retardation plate 8 is, in particular, a λ / 2 plate, which is positioned in front of the laser diode chip 4 such that the retardation plate 8 captures the entire emitted radiation of the one laser diode chip 4. The deflection of the radiation from the laser diode chips in the direction away from the carrier top 11 can advantageously lead to at least partial superposition or spatially separated emission of the two deflected laser beams of different wavelengths and polarizations.

[0065] Fig. 2a shows a schematic sectional view of an embodiment which differs from the embodiment of the Fig. 2 in that no delay element 8 is arranged between one of the two laser diode chips 4 and the optical element 6. The optical element 6, which in this case is a prism, deflects the light beams of the two laser diode chips 4 in an emission direction A. The two laser diode chips 4 can advantageously be directed with the emission surfaces 5 onto the optical element 6 in such a way that the deflected light beams at least partially overlap or run spatially separated from one another. A possible at least partial overlap of the deflected light beams of the same emission wavelength advantageously results in an amplification of the emitted optical power of the laser diode device 10. Alternatively, it is possible to at least partially superimpose two light beams of different wavelengths or to emit them spatially separately from one another.Advantageously, a difference in the wavelengths of the individual laser diode chips can be only slight. In other words, all laser diode chips can have wavelengths of the same color impression, for example, the color red. A deviation between the wavelengths can advantageously be only 10 nm or 15 nm at most. Such a deviation in the emission wavelengths of the laser diode chips can advantageously be achieved by different designs of the laser diode chips, for example, by the choice of semiconductor materials.

[0066] By superimposing emission wavelengths with similar color impressions, the bandwidth of the superimposed light can be increased and, for example, speckles in the laser light can be reduced.

[0067] The embodiment of the Fig. 3 shows a laser diode device 10 according to the embodiment of Fig. 2 in a plan view opposite the emission direction A. The mounting plate 3 covers at least part of the carrier top side 11. The two laser diode chips 4 are mounted on their respective chip carriers 7 and advantageously arranged opposite one another with respect to the central axis of the optical element 6 on a connecting line D. Exactly opposing the laser diode chips 4 on an axis D results in at least partial superposition of the light beams after deflection of the light beams by an optical element 6. In the present case, a retardation plate 8 is positioned on the mounting plate 3 between one of the laser diode chips 4 and the optical element 6. As an alternative to the present application of a prism, a polarization cube can also advantageously be used as the optical element 6.Using a polarization cube, it is possible to completely overlap the deflected light beams as differently polarized light beams.

[0068] The electrical contacting of the laser diode chips 4 is advantageously achieved by means of two contact rods 9a and 9b. In the present case, both contact rods 9a and 9b penetrate the carrier 1 and the mounting plate 3, preferably laterally spaced from the optical element 6 and opposite each other with respect to the axis D, while being electrically insulated from the carrier 1 and the mounting plate 3. Furthermore, contacting of the laser diode chips 4 and the chip carriers 7 can be achieved through the contact rods 9a and 9b, preferably by means of bond wire connections.

[0069] Fig. Figure 3a shows a plan view of an embodiment of a laser diode device 10, which differs from the Fig. 3 in the number of laser diode chips 4 and chip carriers 7. In the present case, four laser diode chips 4 are mounted on four chip carriers 7 with the emission surfaces 5 directed towards an optical element 6, preferably a prism. A retardation plate 8 comprises the embodiment of the Fig. 3a is not. The four laser diode chips can be of the same design and have the same emission wavelengths, or they can be of different designs and have different emission wavelengths. Due to the effective dissipation of heat from the laser diode chips 4 and the heat spreading in the mounting plate 3, no coupling effects or impairments due to excess heat occur on the laser diode chips. Depending on the orientation of the optical element, it is thus possible to at least partially overlap the deflected light beams of the individual laser diode chips or to emit them spatially separately.

[0070] Fig. 3b shows a plan view of an embodiment according to a modification of the laser diode device 10 according to the Fig. 3, wherein the two laser diode chips 4 on their chip carriers 7 are located on opposite sides with respect to the optical element 6, but are advantageously not directly opposite each other and thus do not lie on the connecting axis D. Deflecting the light beams by a prism therefore results in two spatially separated light beams.

[0071] Fig. 4 shows a plan view of an embodiment according to a further modification of the laser diode device 10 according to Fig.3, wherein two optical elements 6 are arranged on the mounting plate 3. The two optical elements are preferably two prisms or mirrors. The front surfaces of the optical elements, which deflect the radiation emitted by the laser diode chips 4, are preferably arranged parallel to one another for both optical elements and are aligned with the respective laser diode chip, thus lying between the edge lines K and L. Furthermore, both front surfaces of the optical elements preferably have the same angle of incidence with respect to the mounting plate. The resulting deflection of the emitted radiation of the laser diode chips 4 produces two light beams that are spatially separated and arranged parallel to one another.

Claims

[1] Laser diode device (10) comprising - a carrier (1) with a carrier top (11), - a plurality of laser diode chips (4) arranged on the carrier top side (11), each of the laser diode chips (4) emitting electromagnetic radiation through a radiation surface (5) during operation, the radiation surfaces (5) each extending perpendicularly to the carrier top side (11), - at least one optical element (6) which deflects the electromagnetic radiation emitted by the laser diode chips (4) at least partially perpendicular to the carrier top side (11), - several chip carriers (7), and - a mounting plate (3) which is arranged on the carrier top side (11) and at least partially covers it, wherein the mounting plate (3) is located between the chip carriers (7) and the carrier (1), wherein - the laser diode chips (4) have different emission wavelengths, - the emission wavelengths differ by no more than 15 nm, and - the laser diode chips (4) are directed towards the optical element (6) in such a way that light beams of the laser diode chips (4) deflected by the optical element (6) at least partially overlap, - exactly one laser diode chip (4) is arranged on each of the chip carriers (7), - the chip carriers (7) electrically insulate the laser diode chips (4) from the carrier (1), - each of the chip carriers (7) comprises a ceramic, in particular AlN, and - the mounting plate (3) is a copper plate. [2] Laser diode device (10) according to claim 1, wherein the mounting plate (3) has a thickness of at least 0.5 mm and at most 2 mm. [3] Laser diode device (10) according to claim 1 or 2, wherein the optical element (6) is a prism. [4] Laser diode device (10) according to claim 1 or 2, wherein the optical element (6) is a mirror. [5] Laser diode device (10) according to claim 1 or 2, wherein the optical element (6) is a polarization cube. [6] Laser diode device (10) according to one of the preceding claims, wherein at least one delay plate (8) is arranged between the laser diode chip (4) and the optical element (6). [7] Laser diode device (10) according to claim 6, wherein the retardation plate (8) is a λ / 2 plate. [8] Laser diode device (10) according to one of the preceding claims, wherein the laser diode device (10) comprises a housing (2) which is a TO housing. [9] Laser diode device (10) according to claim 8, wherein the housing (2) is sealed against the environment and in particular hermetically sealed, wherein the housing is filled with a protective gas or evacuated. [10] Laser diode device (10) comprising - a carrier (1) with a carrier top (11), - a plurality of laser diode chips (4) arranged on the carrier top side (11), each of the laser diode chips (4) emitting electromagnetic radiation through a radiation surface (5) during operation, the radiation surfaces (5) each extending perpendicularly to the carrier top side (11), - at least one optical element (6) which deflects the electromagnetic radiation emitted by the laser diode chip (4) at least partially perpendicular to the carrier top side (11), - several chip carriers (7), and - a mounting plate (3) which is arranged on the carrier top side (11) and at least partially covers it, wherein the mounting plate (3) is located between the chip carriers (7) and the carrier (1), wherein - the laser dome chips (4) each have an optical output power of at least 0.1 W, - the laser diode chips (4) have different emission wavelengths, - the emission wavelengths differ by no more than 15 nm, and - the laser diode chips (4) are directed towards the optical element (6) in such a way that light beams of the laser diode chips (4) deflected by the optical element (6) at least partially overlap, - exactly one laser diode chip (4) is arranged on each of the chip carriers (7), - the chip carriers (7) electrically insulate the laser diode chips (4) from the carrier (1), - each of the chip carriers (7) comprises a ceramic, in particular AlN, and the mounting plate (3) is a copper plate.

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