OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS

Abstract

Optoelectronic semiconductor device (1) with a semiconductor layer sequence (2) and with at least one electrical via (3), wherein: - the semiconductor layer sequence (2) comprises an active zone (22) for radiation generation and a contact layer (25) for electrical contacting the semiconductor layer sequence (2); - the active zone (22) lies in a plane (P) perpendicular to a principal growth direction (G) of the semiconductor layer sequence (2) and is located between a first semiconductor region (21) with a first conductivity type and a second semiconductor region (23) with a second conductivity type different from the first; - the contact layer (25) lies within the second semiconductor region (23) such that, viewed along the principal growth direction (G), the contact layer (25) borders on both sides on further layers of the second semiconductor region (23); - the via (3) extends through the contact layer (25).and- a contact surface (32) between the via (3) and the contact layer (3) to the plane (P) includes a contact angle (w) of at least 20° and at most 70°.