Semiconductor device and method for manufacturing the semiconductor device
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Filing Date
- 2019-10-17
- Publication Date
- 2026-07-09
Smart Images
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Abstract
Description
Technical field
[0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. State of the art
[0002] A semiconductor device featuring a "direct lead bonding" (DLB) structure is known as a structure for directly soldering a lead frame to a semiconductor element. In this type of semiconductor device, the distance between the lead frame and the semiconductor element influences the bonding state and, furthermore, the reliability of the semiconductor device.
[0003] Patent document 1 proposes a structure in which, even if there is a non-uniformity in the height of connection points between the external conductor and a metal foil due to a deformation such as warping or twisting of the connection frame, the metal foil, which has a small spring constant, absorbs the non-uniformity and standardizes an acting load, and the amount of solder can be kept constant. State of the art documents Patent documents
[0004] Patent document 1: Japanese patent application disclosure no. 53-015762 Summary Problem to be solved by the invention
[0005] In a semiconductor device with a DLB structure, the distance between the conductor and the semiconductor element is affected by distortion of an insulating circuit board and a base plate located beneath the semiconductor element during the connection process, i.e., during heating. This distortion occurs because the coefficient of linear expansion of each element differs from the others. If the distortion becomes significant during connection, a gap is created between the conductor and the semiconductor element, or the contact area between the two becomes insufficient. Consequently, the reliability of the connection between the conductor and the semiconductor element is reduced.
[0006] The present invention was made to solve the above problem, and it is an object of the present invention to provide a semiconductor device which has improved connection reliability between a conductor part and a semiconductor element. Means to solve the problem
[0007] The semiconductor device according to the present invention comprises a semiconductor element and a conductor. The semiconductor element is mounted on a circuit structure provided on an insulating substrate. The conductor is plate-shaped and is connected to the semiconductor element by means of a first connecting material inserted between them. The conductor comprises a conductor body and a connecting component. The conductor body has an opening corresponding to a mounting position of the semiconductor element. The connecting component is provided in the opening and on the semiconductor element. The connecting component is connected to the semiconductor element at a lower surface by means of the first connecting material and is connected to an inner circumference of the opening by means of a second connecting material. Effects of the invention
[0008] According to the present invention, the semiconductor device, which has an improved connection reliability between the conductor part and the semiconductor element, can be provided.
[0009] The tasks, features, aspects and advantages of the present invention will become clearer with reference to the following detailed description and the accompanying figures. List of characters Fig. Figure 1 is a top view showing a configuration of a semiconductor device according to a first embodiment. Fig. Figure 2 is a cross-sectional view showing the configuration of the semiconductor device according to the first embodiment. Fig. Figure 3 is a flowchart showing a method for manufacturing the semiconductor device according to the first embodiment. Fig. Figure 4 is a top view showing the configuration of the semiconductor device in the middle of the manufacturing process according to the first embodiment. Fig. Figure 5 is a cross-sectional view showing the configuration of the semiconductor device in the center of the fabrication according to the first embodiment. Fig. Figure 6 is a cross-sectional view showing a state of the semiconductor device at a high temperature in a method for manufacturing the semiconductor device according to the first embodiment. Fig. Figure 7 is a cross-sectional view showing a state of a semiconductor device at a high temperature in a method for manufacturing the semiconductor device according to a second embodiment. Fig. Figure 8 is a cross-sectional view showing an opening part of a conductor body and a connecting component before connection in a third embodiment. Fig. Figure 9 is a cross-sectional view showing the opening part of the conductor body and the connecting component after connection in the third embodiment. Fig. Figure 10 is a cross-sectional view showing the opening part of the conductor body and the connecting component before connection in a fourth embodiment. Fig. Figure 11 is a cross-sectional view showing the opening part of the conductor body and the connecting component before connection in a fifth embodiment. Fig. Figure 12 is a cross-sectional view showing a state of a semiconductor device at a high temperature in a method for manufacturing the semiconductor device according to a seventh embodiment. Description of the embodiments<Erste Ausführungsform>
[0010] Fig. Figure 1 is a top view showing a configuration of a semiconductor device according to a first embodiment. Fig. Figure 2 is a cross-sectional view showing the configuration of the semiconductor device according to the first embodiment, and showing a cross-section extending along a line AA' in Fig. 1 is taken from.
[0011] The semiconductor device comprises a base plate 2, an insulating circuit board 4, a housing 5, a conductor part 8, and a semiconductor element 10.
[0012] The base plate 2 has a plate shape with flat front and back surfaces and is made, for example, of Cu, Al, or AlSiC. Pin fins or similar features to improve the cooling performance of the semiconductor device can be provided on the back surface of the base plate 2.
[0013] The insulating circuit board 4 has an insulating substrate 4A and circuit structures 4B and 4C. Circuit structures 4B and 4C are formed on the front and rear faces of the insulating substrate 4A, respectively. The rear face of the insulating circuit board 4 is attached to the front face of the base plate 2 by means of solder 3. Here, circuit structure 4C is connected to the base plate 2 on the rear face side. Since circuit structure 4B forms an electrical circuit on the front face side, its coverage of the insulating substrate 4A is lower than that of circuit structure 4C on the rear face side. The insulating substrate 4A is made of, for example, Al₂O₃, AlN, or Si₃N₄. Circuit structure 4B on the front face and circuit structure 4C on the rear face are made of, for example, Al or Cu.
[0014] The semiconductor element 10 is mounted on the circuit structure 4B on the front surface. In the first embodiment, a plurality of semiconductor elements 10 are attached to the insulating circuit board 4 by means of an interposed solder 9. The semiconductor element 10 is, for example, made of a semiconductor such as Si or a so-called wide-bandgap semiconductor such as SiC or GaN. The semiconductor element 10 is, for example, an insulated-gate bipolar transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a Schottky diode, or the like. The semiconductor element 10 is, for example, a power semiconductor element.
[0015] The conductor section 8 is a conductor in a plate shape. The conductor section 8 comprises a conductor body 8A and a connecting component 8B.
[0016] The conductor body 8A has an opening 8C which corresponds to the mounting position of the semiconductor element 10. The opening 8C is a through-hole. According to the first embodiment, the opening 8C has a first stepped section 81 on its inner circumference, which projects inwards from the opening 8C. The rear surface of the first stepped section 81 is flush with the rear surface of the conductor body 8A. Therefore, the size of the opening 8C is larger on the front surface side than on the rear surface side. The conductor body 8A is made, for example, of copper or aluminum.
[0017] The connecting component 8B is provided in the opening portion 8C of the conductor body 8A and on the semiconductor element 10. The lower surface of the connecting component 8B is connected to the front surface of the semiconductor element 10 by means of a first connecting material 11. The first connecting material 11 is, for example, solder. Furthermore, according to the first embodiment, the connecting component 8B has a second stepped portion 82, which projects outwards from the outer circumferential portion. The upper surface of the second stepped portion 82 is flush with the upper surface of the connecting component 8B. Thus, the outer shape of the connecting component 8B is larger on the side with the upper surface than on the side with the lower surface. Moreover, the outer shape of the connecting component 8B, which has the second stepped portion 82, is larger than the outer shape of the opening portion 8C, which has the first stepped portion 81 of the conductor body 8A.The first stage section 81 of the conductor body 8A is arranged such that it faces the second stage section 82 of the connection component 8B. The first stage section 81 and the second stage section 82 are connected to each other by a second connection material 12. That is, the outer circumferential part of the connection component 8B is connected to the inner circumferential part of the opening part 8C by the second connection material 12. The second connection material 12 is, for example, a solder. The connection component 8B is, for example, made of copper or aluminum.
[0018] The housing 5 accommodates the insulating substrate 4a, on which the semiconductor element 10 is mounted, and it holds both ends of the conductor section 8. The housing 5 has, for example, a frame shape. The rear surface of the housing 5 is attached to the outer circumference of the front surface of the base plate 2 by means of a fastener or the like. The housing 5 is made, for example, of polyphenylene sulfide (PPS).
[0019] Fig. Figure 3 is a flowchart showing a method for manufacturing the semiconductor device according to the first embodiment.
[0020] In step S1, the semiconductor element 10, which is mounted on the circuit structure 4B on the front side of the insulating substrate 4A, is prepared. At this point, the solder 9 is formed, for example, from a paste-like solder or a plate-like solder before joining.
[0021] In step S2, the conductor body 8A is positioned such that the opening part 8C corresponds to the mounting position of the semiconductor element 10.
[0022] In step S3, the connecting component 8B is placed in the opening part 8C and on the semiconductor element 10. Fig. Figure 4 is a top view showing the configuration of the semiconductor device in step S3. Fig. Figure 5 is a cross-sectional view showing the configuration of the semiconductor device in step S3, and it shows a cross-section along BB' in Fig. 4. At this point, the first and second bonding materials are formed, for example, from a paste-like solder or a plate-like solder, respectively, before joining. Here, the second bonding material is applied to the upper surface of the bonding component 8B before joining.
[0023] In step S4, the semiconductor element 10 and the conductor part 8 are heated. Fig. Figure 6 is a cross-sectional view showing the state of the semiconductor device at a high temperature during step S4. Since the coefficient of linear expansion of each element differs from the others, distortion occurs at the time of joining. For example, the semiconductor device warps as shown in Fig. Figure 6 shows a downward-facing convex shape. Here, a condition is described as an example in which the structure from the semiconductor element 10 to the base plate 2 is distorted in a downward-facing convex shape, and in which the conductor part 8, which is held in the housing 5, is not distorted. Due to this distortion, the position of the semiconductor element 10 relative to the conductor part 8 changes in the z-direction. Since the connecting component 8B is not attached to the conductor body 8A and is movable during heating, the connecting component 8B moves in the direction of the semiconductor element 10, thus following the distortion; that is, the connecting component 8B moves in the z-direction following the displacement of the semiconductor element 10. This brings the connecting component 8B and the semiconductor element 10 into close contact with each other, while the first connecting material is inserted between them.Furthermore, the second connecting material 12 melts on the upper surface of the connecting component 8B and flows into the outer circumferential part of the connecting component 8B and the inner circumferential part of the opening part 8C of the conductor body 8A. As a result, the outer circumferential part of the connecting component 8B and the inner circumferential part of the opening part 8C are brought into close contact with each other, while the second connecting material 12 is inserted between them.
[0024] The state of the semiconductor device after cooling is as shown in Fig. Figure 2 shows that the structure from the semiconductor element 10 to the base plate 2 returns to a flat state. The conductor section 8 is curved upwards in a convex shape, but since the conductor section 8 has a thin plate shape, the deformation is permissible. The connecting component 8B is stably connected to the semiconductor element 10 without a gap forming between the lower surface of the connecting component 8B and the semiconductor element 10. Furthermore, the outer circumferential part of the connecting component 8B is also stably connected to the inner circumferential part of the opening 8C of the conductor body 8A.
[0025] In summary, the semiconductor device according to the first embodiment comprises the semiconductor element 10 and the conductor 8. The semiconductor element 10 is mounted on the circuit structure 4B, which is provided on the insulating substrate 4A. The conductor 8 is plate-shaped and is connected to the semiconductor element 10, with the first connecting material 11 inserted between them. The conductor 8 comprises the conductor body 8A and the connecting component 8B. The conductor body 8A has an opening 8C, which corresponds to the mounting position of the semiconductor element 10. The connecting component 8B is provided in the opening 8C and on the semiconductor element 10.The connecting component 8B is connected to the semiconductor element 10 at its lower surface by the first connecting material 11 and to the inner circumference of the opening part 8C at its outer circumferential part by the second connecting material 12.
[0026] Furthermore, the semiconductor device according to the first embodiment has the housing 5. The insulating substrate 4A, on which the semiconductor element 10 is mounted, is housed in the housing 5, and it holds ends of the conductor part 8.
[0027] This configuration improves the connection reliability between the conductor section 8 and the semiconductor element 10. In particular, when connecting multiple semiconductor elements 10 to the long conductor section 8, the semiconductor element 10 located on the middle side of the conductor section 8 is subjected to significant displacement in the z-direction during heating. Even in this situation, the semiconductor element 10 is stably connected to the conductor section 8 by the connection component 8B, which accommodates the displacement, and a sufficient contact area is ensured. Furthermore, the assembly of the semiconductor device is also improved.
[0028] In the first embodiment, the semiconductor device in which three semiconductor elements 10 are connected to a conductor 8 is shown as an example, but the present invention is not limited to this configuration. The semiconductor device can have a configuration in which one or two semiconductor elements are connected to a conductor 8, or a configuration in which four or more semiconductor elements are connected to a conductor 8.
[0029] Furthermore, the method for manufacturing the semiconductor device according to the first embodiment comprises: the step of preparing the semiconductor element 10, which is mounted on the circuit structure 4B, which is provided on the insulating substrate 4A; and the step of connecting the conductor part 8, which has a plate shape, to the semiconductor element 10, while the first connecting material 11 is inserted between them.The step for connecting the conductor part 8 to the semiconductor element 10 comprises: the step of placing the conductor body 8A, which has the opening part 8C, such that the opening part 8C corresponds to the mounting position of the semiconductor element 10; the step of placing the connecting component 8B in the opening part 8C and on the semiconductor element 10; and the step of heating the semiconductor element 10 and the conductor part 8 in order to connect the lower surface of the connecting component 8B to the semiconductor element 10 through the first connecting material 11, and to connect the outer circumferential part of the connecting component 8B to the inner circumferential part of the opening part 8C through the second connecting material 12.
[0030] The preceding method for manufacturing the semiconductor device enables the production of a semiconductor device in which the connection reliability between the conductor 8 and the semiconductor element 10 is improved. In the case where the drop method using molten solder is employed for joining the conductor 8 and the semiconductor element 10, the distortion of the semiconductor device that occurs when joining the conductor 8 and the semiconductor element 10 is not a problem. This is because the drop method can provide a sufficient quantity of solder. However, to reduce the number of manufacturing steps, it is preferable to perform the joining of the base plate 2 and the insulating circuit board 4, the joining of the insulating circuit board 4 and the semiconductor element 10, and the joining of the semiconductor element 10 and the conductor 8 simultaneously.For this purpose, the first joining material 11 and the second joining material 12 are preferably paste-like or plate-like solders. However, since the quantity of paste-like or plate-like solder is limited, it is not possible to provide a sufficient quantity of solder to compensate for distortion, as is the case with molten solder. Therefore, handling conventional paste-like or plate-like solder is difficult for a structure in which distortion occurs. However, since the joining component 8B of the conductor section 8 is movable at the time of joining in the first embodiment, the semiconductor element 10 and the conductor section 8 are stably joined even when the first joining material 11 and the second joining material 12 are paste-like or plate-like solders. <Zweite Ausführungsform>
[0031] A semiconductor device according to a second embodiment is described. It should be noted that descriptions of the identical configurations and functions as in the first embodiment have been omitted.
[0032] Fig. Figure 7 is a cross-sectional view showing the configuration of the semiconductor device according to the second embodiment.
[0033] The semiconductor device comprises a base plate 2, an insulating circuit board 4, a conductor section 8, and a plurality of semiconductor elements 10. The configuration of the base plate 2 and the insulating circuit board 4 is identical to that of the first embodiment.
[0034] The array of semiconductor elements 10 comprises a first semiconductor element 10A and two second semiconductor elements 10B. The first semiconductor element 10A is positioned closer to the central side of an insulating substrate 4A than the two semiconductor elements 10B. The first semiconductor element 10A and the second semiconductor elements 10B are, for example, made of a semiconductor such as Si or a so-called wide-bandgap semiconductor such as SiC or GaN. The first semiconductor element 10A and the second semiconductor element 10B are, for example, IGBTs, MOSFETs, Schottky diodes, and the like. The first semiconductor element 10A and the second semiconductor elements 10B are, for example, power semiconductor elements.
[0035] The conductor section 8 comprises a conductor body 8A and a connection component 8B. The conductor section 8A comprises an opening section 8C and a connection section 8D. The opening section 8C of the conductor body 8A is provided corresponding to the mounting position of the first semiconductor element 10A. The connection section 8D of the conductor body 8A is provided corresponding to the mounting position of the second semiconductor element 10B. The rear surface of the connection section 8D is connected to the second semiconductor element 10B by means of a third connection material 13. The connection section 8D has, for example, an embossed structure. The third connection material 13 is, for example, a solder.Similar to the first embodiment, the lower surface of the connecting component 8B, which is provided in the opening portion 8C of the conductor body 8A and on the first semiconductor element 10A, is connected to the front surface of the first semiconductor element 10A by a first connecting material 11. Furthermore, the outer circumferential portion of the connecting component 8B is connected to the inner circumference of the opening portion 8C of the conductor body 8A by a second connecting material 12. The conductor body 8A and the connecting component 8B are, for example, made of Cu or Al. In the second embodiment, neither end of the conductor section 8 is held by a housing 5.
[0036] A method for manufacturing the semiconductor device according to the second embodiment is described. In a heating step of the semiconductor element 10 and the conductor section 8, the semiconductor device warps downwards into a convex shape, as shown in Fig. Figure 7 shows that the coefficient of linear expansion of each element differs. As in the first embodiment, a condition is described here as an example in which the structure from the semiconductor element 10 to the base plate 2 is distorted in a downwardly directed convex shape. In this condition, the extent of the displacement of the second semiconductor elements 10B, which are located at both ends of the conductor section 8 in the z-direction, is less than the extent of the displacement of the first semiconductor element 10A in the z-direction. Since both ends of the conductor section 8 are not held by the housing 5 in the second embodiment, not only the connecting component 8B but also the conductor body 8A follows the displacement of the semiconductor element 10 due to the distortion.As a result, the second semiconductor elements 10B are stably connected to the connecting part 8D, while the third connecting material 13 is inserted between them at both ends of the conductor part 8, where the connecting component 8B is not present. With respect to the first semiconductor element 10A, on the other hand, which undergoes a high degree of displacement in the z-direction, the first semiconductor element 10A is stably connected to the connecting component 8B, as the movable connecting component 8B moves in the z-direction, thus following the displacement, while the first connecting material 11 is inserted between them. At this point, the second connecting material 12 melts on the upper surface of the connecting component 8B and flows between the outer circumferential part of the connecting component 8B and the inner circumferential part of the opening 8C of the conductor body 8A.Subsequently, the outer circumferential part of the connecting component 8b is connected to the inner circumferential part of the opening part 8C of the conductor body 8A by means of the second connecting material 12.
[0037] In summary, the semiconductor device according to the second embodiment comprises the first semiconductor element 10A, which is mounted on a circuit structure 4B provided on the insulating substrate 4A, and the second semiconductor element 10B, which differs from the first semiconductor element 10A. The conductor body 8A includes the connecting part 8D, the rear surface of which is connected to the second semiconductor element 10B by the third connecting material 13. The semiconductor element 10A is arranged closer to the central side in the plane of the insulating substrate 4A than the second semiconductor element 10B.
[0038] This configuration improves the connection reliability between the conductor section 8 and the semiconductor element 10, as in the first embodiment. Furthermore, even when connecting a multitude of semiconductor elements 10 to the long conductor section 8, the number of connection components 8B and opening parts 8C can be reduced. Therefore, the manufacturing costs and the assembly of the semiconductor device are improved. <Dritte Ausführungsform>
[0039] A semiconductor device and a method for manufacturing the semiconductor device according to a third embodiment are described. The third embodiment is a subordinate concept of the first embodiment, and the semiconductor device according to the third embodiment incorporates certain configurations of the semiconductor device according to the first embodiment. It should be noted that descriptions of the same configurations and functions as in the first and second embodiments are omitted.
[0040] Fig. Figure 8 is a cross-sectional view showing the opening part 8C and the connection component 8B of the conductor body 8A before connection in the third embodiment. The conductor part 8 has the conductor body 8A and the connection component 8B as in the first and second embodiments. In the third embodiment, the wettability of the connection component 8B relative to the second connection material 12 in the central part of its upper surface is lower than the wettability relative to the second connection material 12 at its outer circumferential part. For example, the connection component 8B has a wettability control structure 15 in the central part of its upper surface. In other words, the wettability of the wettability control structure 15 relative to the second connection material 12 is lower than the wettability of the area surrounding the wettability control structure 15 relative to the second connection material 12.The wettability control structure 15 is preferably a resist layer.
[0041] In the method for manufacturing the semiconductor device according to the third embodiment, a step for preparing the semiconductor element 10 and a step for placing the conductor body 8A are each the same as steps S1 and S2, which are described in Fig. 3 are shown.
[0042] In step S3, the interconnect component 8B, which is placed on the semiconductor element 10, has the second interconnect material 12 on its upper surface. The second interconnect material 12 is, as shown in Fig. 8 shown, provided on the wettability control structure 15. The second bonding material 12 is, for example, a paste-like solder or a plate-like solder.
[0043] In step S4, the semiconductor element 10 and the conductor part 8 are heated. When the second compound material 12 melts on the upper surface of the compound component 8B, the wettability control structure 15 prevents the second compound material 12 from accumulating in the central part of the upper surface. This allows the molten second compound material 12 to flow easily between the outer circumferential part of the compound component 8B and the inner circumferential part of the opening 8C of the conductor body 8A. Fig. Figure 9 is a cross-sectional view showing the opening part 8C and the connection component 8B of the conductor body 8A after connection in the third embodiment. The outer circumferential part of the connection component 8B is stably connected to the inner circumference of the opening part 8C of the conductor body 8A by the second connection material 12. Although the illustration in Fig. In addition, in step S4, similar to the first embodiment, the lower surface of the connecting component 8B is connected to the semiconductor element 10 by the first connecting material 11.
[0044] In the above semiconductor device and in its manufacturing process, the ease of connecting the connection component 8B and the conductor body 8A is improved. <Vierte Ausführungsform>
[0045] A semiconductor device and a method for manufacturing the semiconductor device according to a fourth embodiment are described. The fourth embodiment is a subordinate concept of the first embodiment, and the semiconductor device according to the fourth embodiment has certain configurations of the semiconductor device according to the first embodiment. It should be noted that descriptions of the same configurations and functions as in any of the first through third embodiments are omitted.
[0046] Fig. Figure 10 is a cross-sectional view showing the opening part 8C and the connecting component 8B of the conductor body 8A before connection in the fourth embodiment. The conductor body 8 has the conductor body 8A and the connecting component 8B as in the first and second embodiments. The conductor body 8A according to the fourth embodiment has an upwardly inclined chamfer on its inner circumference. In addition, the connecting component 8B does not have the second step part 82, and its side surface is flat.
[0047] In the method for manufacturing the semiconductor device according to the fourth embodiment, a step for preparing the semiconductor element 10, a step for placing the conductor body 8A, and a step for placing the interconnect component 8B are each the same as steps S1, S2, and S3, which are described in Fig. 3 are shown.
[0048] As in Fig. As shown in Figure 10, in step S4, before heating the semiconductor element 10 and the conductor section 8, the second connecting material 12 is inserted such that it comes into contact with the side surface of the outer circumferential part of the connecting component 8B and with the slope of the opening part 8C of the conductor body 8A. Here, the second connecting material 12 is, for example, a thread-like solder. By heating the semiconductor element 10 and the conductor section 8, the second connecting material 12 melts, and the outer circumferential part of the connecting component 8B is stably connected to the inner circumference of the opening part 8C of the conductor body 8A by means of the connecting material 12. Similar to the first embodiment, in this step S4, the lower surface of the connecting component 8B is connected to the semiconductor element 10 by the first connecting material 11.
[0049] In the aforementioned semiconductor device and its manufacturing process, the ease of connecting the connection component 8B and the conductor body 8A is improved. In the fourth embodiment, an example is shown in which the side surface of the opening portion 8C of the conductor body 8A has a slope, but the present invention is not limited to this, and a vertical surface can be used. <Fünfte Ausführungsform>
[0050] A semiconductor device and a method for manufacturing the semiconductor device according to a fifth embodiment are described. The fifth embodiment is a subordinate concept of the first embodiment, and the semiconductor device according to the fifth embodiment has respective configurations of the semiconductor device according to the first embodiment. It should be noted that the descriptions of the configurations and functions as in any one of the first through fourth embodiments are omitted.
[0051] Fig. Figure 11 is a cross-sectional view showing the opening part 8C and the connecting component 8B of the conductor body 8A before connection in the fifth embodiment. The conductor body 8A has the conductor body 8A and the connecting component 8B as in the first embodiment. In addition, the conductor body 8A has, as in the first embodiment, the first stepped part 81, which projects inwards from the inner circumference of the opening part 8C, and the connecting component 8B has the second stepped part 82, which projects outwards from the outer circumference.
[0052] In the method for manufacturing the semiconductor device according to the fifth embodiment, a step for preparing the semiconductor element 10 and a step for placing the conductor body 8A are each the same steps as steps S1 and S2, which are described in Fig. 3 are shown.
[0053] As in Fig. As shown in Figure 11, the connecting component 8B, which was placed on the semiconductor element 10, has the second connecting material 12 in step S3, which was previously applied to the contact surface of the second stage part 82. The second connecting material 12 is, for example, a paste-like solder or a plate-like solder. No connecting material is provided on the contact surface of the first stage part 81, which is arranged such that it faces the contact surface of the second stage part 82.
[0054] In step S4, the semiconductor element 10 and the conductor part 8 are heated. The molten second bonding material 12 connects the contact surface of the second stage part 82 and the contact surface of the first stage part 81 in a simple manner. That is, the outer circumferential part of the bonding component 8B is connected to the inner circumferential part of the opening 8C of the conductor body 8A by the second bonding material 12. Although the illustration in Fig. In addition, in this step S4, similar to the first embodiment, the lower surface of the connecting component 8B is connected to the semiconductor element 10 by the first connecting material 11.
[0055] In the above semiconductor device and in its manufacturing process, the ease of connecting the connection component 8B and the conductor body 8A is improved. <Sechste Ausführungsform>
[0056] A semiconductor device and a method for manufacturing the semiconductor device according to a sixth embodiment are described. The semiconductor device according to the sixth embodiment has respective configurations of the semiconductor device according to the fifth embodiment. It should be noted that descriptions of the same configurations and functions as in any of the first through fifth embodiments are omitted.
[0057] The conductor section 8 comprises the conductor body 8A and the connecting component 8B as in the first and second embodiments. The heat capacity of the connecting component 8B in the sixth embodiment is lower than the heat capacity of the conductor body 8A. The connecting component 8B and the conductor body 8A are, for example, made of different metals.
[0058] Using this configuration, the temperature of connection component 8B in the Fig. In step S4 shown in step 3, the process is accelerated, and heat is easily transferred to the first connecting material 11 and the second connecting material 12. This facilitates the joining of the semiconductor element 10, the connecting component 8b, and the conductor body 8A. <Siebte Ausführungsform>
[0059] A semiconductor device and a method for manufacturing the semiconductor device according to a seventh embodiment are described. It should be noted that descriptions of the same configurations and functions as in one of the first through sixth embodiments have been omitted.
[0060] Fig.Figure 12 is a cross-sectional view showing a state of the semiconductor device at a high temperature during the manufacturing process. The conductor part 8 has the conductor body 8A and the connecting component 8B as in the first and second embodiments. In the seventh embodiment, the connecting component 8B has a tiny protruding part 8E that projects from the contact surface with the second connecting material 12, i.e., the lower surface. The tiny protruding part 8E is formed by a dowel process.
[0061] This configuration ensures a constant thickness in the second interconnect material 12, corresponding to the tiny protruding part 8E. This improves the assembleability of the semiconductor device.
[0062] It should be noted that the embodiments in the present invention can be freely combined, and each of the embodiments can be suitably modified or omitted within the scope of protection of the present invention.
[0063] Although the present invention has been described in detail, the foregoing description is illustrative in all aspects, and the present invention is not limited thereto. It is understood that countless variations not illustrated can be considered without departing from the scope of protection of the present invention. Reference symbol list 2 Base plate 3 Lot 4 insulating circuit boards 4A insulating substrate 4B Circuit structure 4C circuit structure 5 cases 8. Cable section 8A cable body 8B Connection component 8C Opening part 8D connector 8E tiny excellent part 9 Lot 10 Semiconductor element 10A first semiconductor element 10B second semiconductor element 11 first connecting material 12 second connecting material 13 third connecting material 15 Wettability tax structure 81 first stage part 82 second stage part
Claims
[1] comprising a semiconductor device: ▪ a semiconductor element mounted on a circuit structure provided on an insulating substrate; and ▪ a conductor part which has a plate shape and is connected to the semiconductor element by means of a first connecting material which is inserted between the conductor part and the semiconductor element, wherein ▪ the line section has: o a conductor body having an opening part which is provided corresponding to a mounting position of the semiconductor element; and a connecting component which is provided in the opening part and on the semiconductor element, and ▪ the connecting component is connected to the semiconductor element at a lower surface of the connecting component by the first connecting material and is connected to an inner circumference of the opening part by a second connecting material at an outer circumferential part of the connecting component. [2] Semiconductor device according to claim 1 further comprising a housing in which the insulating substrate which is mounted with the semiconductor element is housed and holds both ends of the conductor part. [3] Semiconductor device according to claim 1 or 2 further comprising a further semiconductor element which is mounted on the circuit structure of the insulating substrate, wherein ▪ the conductor body also has a connecting part, the rear surface of which is connected to the further semiconductor element by a third connecting material, and ▪ the semiconductor element is located closer to a central side in a plane of the insulating substrate than the other semiconductor element. [4] Semiconductor device according to one of claims 1 to 3, wherein the interconnecting component has a wettability relative to the second interconnecting material in a central part of an upper surface of the interconnecting component which is lower than the wettability relative to the second interconnecting material on the outer circumferential part of the interconnecting component. [5] Semiconductor device according to claim 4, wherein the interconnect component has a resist layer in the middle part of the upper surface. [6] Semiconductor device according to any one of claims 1 to 5, wherein the opening part of the conductor body has an upwardly inclined slope on the inner circumference. [7] Semiconductor device according to any one of claims 1 to 6, wherein ▪ the conductor body also has a first step section which projects inwards from the opening section from the inner circumference of the opening section, ▪ the connecting component has a second step part which projects outwards from the outer circumferential part, and ▪ the first step section and the second step section are connected by the second connecting material. [8] Semiconductor device according to any one of claims 1 to 7, wherein the interconnect component has a heat capacity that is smaller than the heat capacity of the conductor body. [9] Semiconductor device according to any one of claims 1 to 8, wherein the interconnect component has a protruding part on the lower surface. [10] comprising a method for manufacturing a semiconductor device: ▪ a step to prepare a semiconductor element mounted on a circuit structure provided on an insulating substrate; and ▪ a step for connecting a conductor part having a plate shape to the semiconductor element, wherein a first connecting material is inserted between the conductor part and the semiconductor element, wherein the step for connecting the conductor part to the semiconductor element comprises: ▪ a step towards placing the conductor body, which has an opening part, in such a way that the opening part corresponds to a mounting position of the semiconductor element; ▪ a step to place a connecting component in the opening part and on the semiconductor element; and ▪ a step to heat the semiconductor element and the conductor part in order to connect a lower surface of the connecting component to the semiconductor element using the first connecting material and to connect an outer circumferential part of the connecting component to an inner circumferential part of the opening part using a second connecting material. [11] Method for manufacturing the semiconductor device according to claim 10, wherein ▪ the interconnect component in the step of placing the interconnect component on the semiconductor element has the second interconnect material on an upper surface of the interconnect component, and ▪ the joining component exhibits a wettability in a central part of the upper surface of the joining component that is lower than the wettability in relation to the second joining material on the outer circumferential part of the joining component. [12] Method for manufacturing the semiconductor device according to claim 10, wherein the step of connecting the outer circumferential part of the connecting component to the inner circumferential part of the opening part comprises inserting the second connecting material in such a way that it comes into contact with a side surface of the outer circumferential part and a side surface of the inner circumferential part of the opening part. [13] Method for manufacturing the semiconductor device according to claim 10, wherein ▪ the conductor body has a first step section that projects inwards from the opening section from the inner circumference of the opening section, ▪ the connecting component has a second step part that projects outwards from the outer circumferential part, ▪ the connecting component in the step for placing the connecting component has the second connecting material which was previously applied to the second stage part, and ▪ the step to connect the outer circumferential part of the connecting component with the inner circumferential part of the opening part involves connecting the first step part and the second step part using the second connecting material.